JP7105442B2 - 発光装置およびプロジェクター - Google Patents

発光装置およびプロジェクター Download PDF

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Publication number
JP7105442B2
JP7105442B2 JP2018147763A JP2018147763A JP7105442B2 JP 7105442 B2 JP7105442 B2 JP 7105442B2 JP 2018147763 A JP2018147763 A JP 2018147763A JP 2018147763 A JP2018147763 A JP 2018147763A JP 7105442 B2 JP7105442 B2 JP 7105442B2
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Japan
Prior art keywords
light
stacking direction
columnar
substrate
layer
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JP2018147763A
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English (en)
Japanese (ja)
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JP2020024982A (ja
JP2020024982A5 (enExample
Inventor
峻介 石沢
克巳 岸野
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Seiko Epson Corp
Sophia School Corp
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Seiko Epson Corp
Sophia School Corp
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Priority to JP2018147763A priority Critical patent/JP7105442B2/ja
Priority to CN201910687341.3A priority patent/CN110808532B/zh
Priority to US16/531,237 priority patent/US10816884B2/en
Publication of JP2020024982A publication Critical patent/JP2020024982A/ja
Publication of JP2020024982A5 publication Critical patent/JP2020024982A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2006—Lamp housings characterised by the light source
    • G03B21/2033—LED or laser light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2006—Lamp housings characterised by the light source
    • G03B21/2013—Plural light sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18319—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement comprising a periodical structure in lateral directions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/005—Projectors using an electronic spatial light modulator but not peculiar thereto
    • G03B21/006—Projectors using an electronic spatial light modulator but not peculiar thereto using LCD's
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B33/00—Colour photography, other than mere exposure or projection of a colour film
    • G03B33/10—Simultaneous recording or projection
    • G03B33/12—Simultaneous recording or projection using beam-splitting or beam-combining systems, e.g. dichroic mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/02—MBE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Led Devices (AREA)
  • Projection Apparatus (AREA)
  • Semiconductor Lasers (AREA)
JP2018147763A 2018-08-06 2018-08-06 発光装置およびプロジェクター Active JP7105442B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018147763A JP7105442B2 (ja) 2018-08-06 2018-08-06 発光装置およびプロジェクター
CN201910687341.3A CN110808532B (zh) 2018-08-06 2019-07-29 发光装置和投影仪
US16/531,237 US10816884B2 (en) 2018-08-06 2019-08-05 Light emitting device and projector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018147763A JP7105442B2 (ja) 2018-08-06 2018-08-06 発光装置およびプロジェクター

Publications (3)

Publication Number Publication Date
JP2020024982A JP2020024982A (ja) 2020-02-13
JP2020024982A5 JP2020024982A5 (enExample) 2021-07-29
JP7105442B2 true JP7105442B2 (ja) 2022-07-25

Family

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Country Status (3)

Country Link
US (1) US10816884B2 (enExample)
JP (1) JP7105442B2 (enExample)
CN (1) CN110808532B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6891870B2 (ja) * 2018-12-28 2021-06-18 セイコーエプソン株式会社 プロジェクター
JP6973452B2 (ja) * 2019-07-30 2021-12-01 セイコーエプソン株式会社 発光装置、光源モジュールおよびプロジェクター
JP2021057443A (ja) * 2019-09-30 2021-04-08 セイコーエプソン株式会社 発光装置、および、プロジェクター
US20210168338A1 (en) * 2019-11-29 2021-06-03 Seiko Epson Corporation Light emitting apparatus and projector
CN115104190A (zh) * 2020-02-18 2022-09-23 密歇根大学董事会 微米尺度的发光二极管
JP7176700B2 (ja) * 2020-07-31 2022-11-22 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7556246B2 (ja) * 2020-09-23 2024-09-26 セイコーエプソン株式会社 発光装置、発光装置の製造方法およびプロジェクター
JP7515109B2 (ja) * 2020-10-06 2024-07-12 セイコーエプソン株式会社 発光装置およびプロジェクター
JP2022082063A (ja) * 2020-11-20 2022-06-01 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7560829B2 (ja) * 2020-11-20 2024-10-03 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7595299B2 (ja) 2021-02-26 2024-12-06 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7616599B2 (ja) * 2021-02-26 2025-01-17 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7320794B2 (ja) 2021-03-15 2023-08-04 セイコーエプソン株式会社 発光装置、プロジェクター、およびディスプレイ
JP7608896B2 (ja) * 2021-03-16 2025-01-07 セイコーエプソン株式会社 発光装置およびプロジェクター

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160365480A1 (en) 2015-06-09 2016-12-15 Zetian Mi High efficiency visible and ultraviolet nanowire emitters

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JP3242955B2 (ja) * 1991-10-21 2001-12-25 株式会社東芝 半導体レーザ装置
WO1997024787A1 (en) * 1995-12-28 1997-07-10 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and process for producing the same
US8163575B2 (en) 2005-06-17 2012-04-24 Philips Lumileds Lighting Company Llc Grown photonic crystals in semiconductor light emitting devices
JP4856666B2 (ja) 2008-03-26 2012-01-18 独立行政法人科学技術振興機構 発光ダイオード素子及びその製造方法
KR101567121B1 (ko) 2008-09-01 2015-11-06 가꼬호징 조찌가꾸잉 반도체 광소자 어레이 및 그의 제조방법
JP5394717B2 (ja) 2008-12-15 2014-01-22 日本オクラロ株式会社 窒化物半導体光素子の製造方法
JP2014512667A (ja) 2011-02-10 2014-05-22 ザ・ロイヤル・インスティテューション・フォア・ザ・アドバンスメント・オブ・ラーニング／マクギル・ユニヴァーシティ 高効率広帯域半導体ナノワイヤ素子および異種金属触媒無しの製造方法
JP6020190B2 (ja) * 2013-01-21 2016-11-02 セイコーエプソン株式会社 発光装置、スーパールミネッセントダイオード、およびプロジェクター
JP6421928B2 (ja) * 2014-12-24 2018-11-14 セイコーエプソン株式会社 発光装置およびプロジェクター

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
US20160365480A1 (en) 2015-06-09 2016-12-15 Zetian Mi High efficiency visible and ultraviolet nanowire emitters

Also Published As

Publication number Publication date
JP2020024982A (ja) 2020-02-13
CN110808532A (zh) 2020-02-18
CN110808532B (zh) 2023-07-11
US20200041889A1 (en) 2020-02-06
US10816884B2 (en) 2020-10-27

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