JP7096657B2 - ウェーハの加工方法 - Google Patents
ウェーハの加工方法 Download PDFInfo
- Publication number
- JP7096657B2 JP7096657B2 JP2017192599A JP2017192599A JP7096657B2 JP 7096657 B2 JP7096657 B2 JP 7096657B2 JP 2017192599 A JP2017192599 A JP 2017192599A JP 2017192599 A JP2017192599 A JP 2017192599A JP 7096657 B2 JP7096657 B2 JP 7096657B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- ingot
- mark
- orifra
- forming step
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54433—Marks applied to semiconductor devices or parts containing identification or tracking information
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Laser Beam Processing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
波長:1064nm
繰り返し周波数:80kHz
平均出力:3.2W
パルス幅:4ns
スポット径:10μm
集光レンズの開口数(NA):0.45
インデックス量:400μm
61a 第1の面
61b 第2の面
61c 外周面
63 第1のオリフラ
71 縞模様状マーク
72 傾斜線状マーク
75 改質層
76 クラック
LB レーザービーム
W ウェーハ
Claims (3)
- 第1の面と、該第1の面と反対側の第2の面と、該第1の面及び該第2の面に交差する方向に延在する外周面とが形成されたインゴットからウェーハを切り出すウェーハの加工方法であって、
該外周面は結晶方位を示すオリフラを含み、
ウェーハを切り出す方向と垂直な方向に該第1の面から該第2の面に渡って延在する縞模様状マークをインゴットのIDとして該オリフラに形成し、該縞模様形状マークに並列して、該第1の面から該第2の面に渡って傾斜する傾斜線状マークを該オリフラに形成するマーク形成ステップと、
該マーク形成ステップを実施した該インゴットに対して透過性を有する波長のレーザービームの集光点を該第1の面から生成するウェーハの厚みに相当する深さに位置付けると共に、該集光点と該インゴットとを相対的に移動して該レーザービームを該第1の面に照射し、該第1の面に平行な改質層及び該改質層から伸長するクラックを形成して分離起点を形成する分離起点形成ステップと、
該分離起点形成ステップを実施した後、該分離起点からウェーハの厚みに相当する板状物を該インゴットから剥離してウェーハを生成するウェーハ剥離ステップと、を備え、
該剥離後のウェーハの該オリフラに形成された該縞模様状マークにて、何れのインゴットから切り出されたものか検出可能であり、該剥離後のウェーハの該オリフラに形成された該縞模様状マーク及び該傾斜線状マークの相対位置によって、該何れのインゴットでのウェーハを切り出した順番を検出可能であること、を特徴とするウェーハの加工方法。 - 該マーク形成ステップにおいて、レーザーマーキングによって該縞模様状マーク及び該傾斜線状マークを形成することを特徴とする請求項1記載のウェーハの加工方法。
- 該マーク形成ステップにおいて、インクジェット印刷によって該縞模様状マーク及び該傾斜線状マークを形成することを特徴とする請求項1記載のウェーハの加工方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017192599A JP7096657B2 (ja) | 2017-10-02 | 2017-10-02 | ウェーハの加工方法 |
TW107131063A TWI815819B (zh) | 2017-10-02 | 2018-09-05 | 晶圓的加工方法 |
CN201811140126.3A CN109594125A (zh) | 2017-10-02 | 2018-09-28 | 六方晶单晶锭和晶片的加工方法 |
KR1020180117049A KR102515299B1 (ko) | 2017-10-02 | 2018-10-01 | 육방정 단결정 잉곳 및 웨이퍼의 가공 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017192599A JP7096657B2 (ja) | 2017-10-02 | 2017-10-02 | ウェーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019067944A JP2019067944A (ja) | 2019-04-25 |
JP7096657B2 true JP7096657B2 (ja) | 2022-07-06 |
Family
ID=65957310
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017192599A Active JP7096657B2 (ja) | 2017-10-02 | 2017-10-02 | ウェーハの加工方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7096657B2 (ja) |
KR (1) | KR102515299B1 (ja) |
CN (1) | CN109594125A (ja) |
TW (1) | TWI815819B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111300192B (zh) * | 2020-03-24 | 2021-12-24 | 广州南砂晶圆半导体技术有限公司 | 一种应用于单晶的定向加工方法 |
CN112144103B (zh) * | 2020-09-27 | 2022-08-16 | 宜昌南玻硅材料有限公司 | 铸造单晶籽晶制备方法 |
CN114428444B (zh) * | 2020-10-29 | 2024-01-26 | 中芯国际集成电路制造(上海)有限公司 | 套刻量测系统矫正方法 |
CN113172777B (zh) * | 2021-04-23 | 2022-10-04 | 深圳大学 | 一种探测器级高纯锗单晶籽晶及其制备方法和应用 |
CN114161596B (zh) * | 2021-12-23 | 2024-04-09 | 西安奕斯伟材料科技股份有限公司 | 一种用于生产硅片的系统、方法及单晶硅棒 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001313238A (ja) | 2000-03-17 | 2001-11-09 | Internatl Business Mach Corp <Ibm> | 識別マークを有する半導体ウェハ |
JP2008294365A (ja) | 2007-05-28 | 2008-12-04 | Sanyo Electric Co Ltd | 太陽電池の製造方法 |
US20100237514A1 (en) | 2007-06-13 | 2010-09-23 | Conergy Ag | Ingot marking for solar cell determination |
JP2016127186A (ja) | 2015-01-06 | 2016-07-11 | 株式会社ディスコ | ウエーハの生成方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01192121A (ja) * | 1988-01-27 | 1989-08-02 | Hitachi Cable Ltd | 半導体ウエハ |
TW230262B (ja) * | 1992-12-24 | 1994-09-11 | American Telephone & Telegraph | |
JPH10256105A (ja) * | 1997-03-11 | 1998-09-25 | Super Silicon Kenkyusho:Kk | レーザマークを付けたウェーハ |
DE19730224A1 (de) * | 1997-07-15 | 1999-01-21 | Bayer Ag | Verfahren zur Reinigung Phosphoroxychlorid |
JP4071476B2 (ja) * | 2001-03-21 | 2008-04-02 | 株式会社東芝 | 半導体ウェーハ及び半導体ウェーハの製造方法 |
US6797585B1 (en) * | 2003-10-07 | 2004-09-28 | Lsi Logic Corporation | Nonintrusive wafer marking |
US20090057837A1 (en) * | 2007-09-04 | 2009-03-05 | Leslie Marshall | Wafer with edge notches encoding wafer identification descriptor |
JP2009090387A (ja) | 2007-10-04 | 2009-04-30 | Denso Corp | 炭化珪素基板製造用ワイヤーソー装置 |
CN103489963B (zh) * | 2013-10-10 | 2016-03-16 | 大族激光科技产业集团股份有限公司 | 太阳能电池硅片的跟踪方法 |
JP6425606B2 (ja) * | 2015-04-06 | 2018-11-21 | 株式会社ディスコ | ウエーハの生成方法 |
-
2017
- 2017-10-02 JP JP2017192599A patent/JP7096657B2/ja active Active
-
2018
- 2018-09-05 TW TW107131063A patent/TWI815819B/zh active
- 2018-09-28 CN CN201811140126.3A patent/CN109594125A/zh active Pending
- 2018-10-01 KR KR1020180117049A patent/KR102515299B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001313238A (ja) | 2000-03-17 | 2001-11-09 | Internatl Business Mach Corp <Ibm> | 識別マークを有する半導体ウェハ |
JP2008294365A (ja) | 2007-05-28 | 2008-12-04 | Sanyo Electric Co Ltd | 太陽電池の製造方法 |
US20100237514A1 (en) | 2007-06-13 | 2010-09-23 | Conergy Ag | Ingot marking for solar cell determination |
JP2016127186A (ja) | 2015-01-06 | 2016-07-11 | 株式会社ディスコ | ウエーハの生成方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI815819B (zh) | 2023-09-21 |
KR102515299B1 (ko) | 2023-03-28 |
JP2019067944A (ja) | 2019-04-25 |
CN109594125A (zh) | 2019-04-09 |
KR20190039007A (ko) | 2019-04-10 |
TW201923870A (zh) | 2019-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7096657B2 (ja) | ウェーハの加工方法 | |
KR102361278B1 (ko) | 웨이퍼의 생성 방법 | |
KR102361277B1 (ko) | 웨이퍼의 생성 방법 | |
KR102341604B1 (ko) | 웨이퍼의 생성 방법 | |
JP6486240B2 (ja) | ウエーハの加工方法 | |
KR102409602B1 (ko) | 웨이퍼의 생성 방법 | |
KR102361279B1 (ko) | 웨이퍼의 생성 방법 | |
JP6486239B2 (ja) | ウエーハの加工方法 | |
KR102341600B1 (ko) | 웨이퍼의 생성 방법 | |
KR102354665B1 (ko) | 웨이퍼의 생성 방법 | |
KR102341602B1 (ko) | 웨이퍼의 생성 방법 | |
KR102354661B1 (ko) | 웨이퍼의 생성 방법 | |
JP6399913B2 (ja) | ウエーハの生成方法 | |
JP6472347B2 (ja) | ウエーハの薄化方法 | |
JP6482425B2 (ja) | ウエーハの薄化方法 | |
CN106057737B (zh) | 薄板的分离方法 | |
KR102341597B1 (ko) | 웨이퍼의 생성 방법 | |
KR102341594B1 (ko) | 웨이퍼의 생성 방법 | |
JP6355540B2 (ja) | ウエーハの生成方法 | |
KR20160142231A (ko) | 웨이퍼의 생성 방법 | |
JP6366485B2 (ja) | ウエーハの生成方法 | |
JP6418927B2 (ja) | ウエーハの生成方法 | |
JP6366486B2 (ja) | ウエーハの生成方法 | |
JP2015095497A (ja) | ウエーハのレーザー加工方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200814 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210625 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210817 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210930 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20220111 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220325 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20220325 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20220405 |
|
C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20220412 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220607 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220624 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7096657 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |