JP7084989B2 - ルテニウムで被包された光電陰極電子放出器 - Google Patents

ルテニウムで被包された光電陰極電子放出器 Download PDF

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JP7084989B2
JP7084989B2 JP2020520025A JP2020520025A JP7084989B2 JP 7084989 B2 JP7084989 B2 JP 7084989B2 JP 2020520025 A JP2020520025 A JP 2020520025A JP 2020520025 A JP2020520025 A JP 2020520025A JP 7084989 B2 JP7084989 B2 JP 7084989B2
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electron emitter
protective film
photocathode
electron
photocathode structure
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JP2020537295A (ja
JP2020537295A5 (enExample
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ギルダルド デルガド
ルディ ガルシア
カテリナ イオーケイミディ
フランシス ヒル
マイケル イー ロメロ
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KLA Corp
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KLA Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0927—Systems for changing the beam intensity distribution, e.g. Gaussian to top-hat
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H01J1/3044—Point emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J19/00—Details of vacuum tubes of the types covered by group H01J21/00
    • H01J19/02—Electron-emitting electrodes; Cathodes
    • H01J19/24—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
    • H01J40/02—Details
    • H01J40/04—Electrodes
    • H01J40/06—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
    • H01J40/16—Photoelectric discharge tubes not involving the ionisation of a gas having photo- emissive cathode, e.g. alkaline photoelectric cell
    • H01J40/18—Photoelectric discharge tubes not involving the ionisation of a gas having photo- emissive cathode, e.g. alkaline photoelectric cell with luminescent coatings for influencing the sensitivity of the tube, e.g. by converting the input wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H01J2201/30407—Microengineered point emitters
    • H01J2201/30411—Microengineered point emitters conical shaped, e.g. Spindt type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30449—Metals and metal alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/3048—Semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/308—Semiconductor cathodes, e.g. having PN junction layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3425—Metals, metal alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3426—Alkaline metal compounds, e.g. Na-K-Sb
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06333—Photo emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24521—Beam diameter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24592—Inspection and quality control of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2020520025A 2017-10-10 2018-10-10 ルテニウムで被包された光電陰極電子放出器 Active JP7084989B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762570438P 2017-10-10 2017-10-10
US62/570,438 2017-10-10
US16/150,675 2018-10-03
US16/150,675 US10395884B2 (en) 2017-10-10 2018-10-03 Ruthenium encapsulated photocathode electron emitter
PCT/US2018/055287 WO2019075116A1 (en) 2017-10-10 2018-10-10 PHOTOCATHODE ELECTRON EMITTER ENCAPSULATED IN RUTHENIUM

Publications (3)

Publication Number Publication Date
JP2020537295A JP2020537295A (ja) 2020-12-17
JP2020537295A5 JP2020537295A5 (enExample) 2021-11-18
JP7084989B2 true JP7084989B2 (ja) 2022-06-15

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JP2020520025A Active JP7084989B2 (ja) 2017-10-10 2018-10-10 ルテニウムで被包された光電陰極電子放出器

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US (1) US10395884B2 (enExample)
EP (1) EP3695431B1 (enExample)
JP (1) JP7084989B2 (enExample)
WO (1) WO2019075116A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10714294B2 (en) 2018-05-25 2020-07-14 Kla-Tencor Corporation Metal protective layer for electron emitters with a diffusion barrier
US10714295B2 (en) * 2018-09-18 2020-07-14 Kla-Tencor Corporation Metal encapsulated photocathode electron emitter
US11495428B2 (en) 2019-02-17 2022-11-08 Kla Corporation Plasmonic photocathode emitters at ultraviolet and visible wavelengths
US11217416B2 (en) * 2019-09-27 2022-01-04 Kla Corporation Plasmonic photocathode emitters

Citations (5)

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Publication number Priority date Publication date Assignee Title
US20040051046A1 (en) 2002-06-06 2004-03-18 The Regents Of The University Of California Highly sensitive imaging camera for space applications including detection of ultrahigh energy cosmic rays
US20140034816A1 (en) 2012-08-03 2014-02-06 Kla-Tencor Corporation Photocathode Including Silicon Substrate With Boron Layer
JP2014235816A (ja) 2013-05-31 2014-12-15 独立行政法人物質・材料研究機構 フォトカソード型電子線源、その作成方法及びフォトカソード型電子線源システム
JP2015038892A (ja) 2007-02-22 2015-02-26 アプライド マテリアルズ イスラエル リミテッド 高スループットｓｅｍツール
JP2020515019A (ja) 2016-12-20 2020-05-21 ケーエルエー コーポレイション ルテニウム被覆を有する電子ビーム放出器

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JPH0936025A (ja) * 1995-07-14 1997-02-07 Nec Corp 電子ビーム露光法及び装置
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KR101159074B1 (ko) * 2006-01-14 2012-06-25 삼성전자주식회사 도전성 탄소나노튜브 팁, 이를 구비한 스캐닝 프로브마이크로스코프의 탐침 및 상기 도전성 탄소나노튜브 팁의제조 방법
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US20040051046A1 (en) 2002-06-06 2004-03-18 The Regents Of The University Of California Highly sensitive imaging camera for space applications including detection of ultrahigh energy cosmic rays
JP2015038892A (ja) 2007-02-22 2015-02-26 アプライド マテリアルズ イスラエル リミテッド 高スループットｓｅｍツール
US20140034816A1 (en) 2012-08-03 2014-02-06 Kla-Tencor Corporation Photocathode Including Silicon Substrate With Boron Layer
JP2015536012A (ja) 2012-08-03 2015-12-17 ケーエルエー−テンカー コーポレイション ホウ素層を有するシリコン基板を含むフォトカソード
JP2014235816A (ja) 2013-05-31 2014-12-15 独立行政法人物質・材料研究機構 フォトカソード型電子線源、その作成方法及びフォトカソード型電子線源システム
JP2020515019A (ja) 2016-12-20 2020-05-21 ケーエルエー コーポレイション ルテニウム被覆を有する電子ビーム放出器

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Title
FENG,Zhu et al.，Surface Modification to a-SiC Photocathode Using Ruthenium Nanoparticles，Material Research Society Symposium Proceedings，2013年，Vol.1539

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Publication number Publication date
JP2020537295A (ja) 2020-12-17
EP3695431A4 (en) 2021-08-11
EP3695431B1 (en) 2024-08-28
US20190108966A1 (en) 2019-04-11
WO2019075116A1 (en) 2019-04-18
US10395884B2 (en) 2019-08-27
EP3695431A1 (en) 2020-08-19

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