JP7070437B2 - 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 Download PDFInfo
- Publication number
- JP7070437B2 JP7070437B2 JP2018565960A JP2018565960A JP7070437B2 JP 7070437 B2 JP7070437 B2 JP 7070437B2 JP 2018565960 A JP2018565960 A JP 2018565960A JP 2018565960 A JP2018565960 A JP 2018565960A JP 7070437 B2 JP7070437 B2 JP 7070437B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- main surface
- defect
- defects
- epitaxial substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 157
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 153
- 239000000758 substrate Substances 0.000 title claims description 97
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 238000000034 method Methods 0.000 title claims description 20
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 230000007547 defect Effects 0.000 claims description 145
- 239000013078 crystal Substances 0.000 claims description 45
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 15
- 239000010410 layer Substances 0.000 description 74
- 239000007789 gas Substances 0.000 description 32
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 26
- 238000010438 heat treatment Methods 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 16
- 239000012535 impurity Substances 0.000 description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- 229910001873 dinitrogen Inorganic materials 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 239000001294 propane Substances 0.000 description 8
- 229910000077 silane Inorganic materials 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 230000006698 induction Effects 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 229910021529 ammonia Inorganic materials 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 6
- 210000000746 body region Anatomy 0.000 description 6
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000004804 winding Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 229910005883 NiSi Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- GPTXWRGISTZRIO-UHFFFAOYSA-N chlorquinaldol Chemical compound ClC1=CC(Cl)=C(O)C2=NC(C)=CC=C21 GPTXWRGISTZRIO-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02447—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
- H01L21/02661—In-situ cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/34—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being on the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
- H01L29/745—Gate-turn-off devices with turn-off by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Chemical Vapour Deposition (AREA)
Description
まず本開示の実施形態の概要について説明する。本明細書の結晶学的記載においては、個別方位を[]、集合方位を<>、個別面を()、集合面を{}でそれぞれ示す。結晶学上の指数が負であることは、通常、数字の上に”-”(バー)を付すことによって表現されるが、本明細書では数字の前に負の符号を付すことによって結晶学上の負の指数を表現する。
以下、本開示の実施形態の詳細について説明する。以下の説明では、同一または対応する要素には同一の符号を付し、それらについて同じ説明は繰り返さない。
図1および図2に示されるように、本実施形態に係る炭化珪素エピタキシャル基板100は、炭化珪素単結晶基板10と、炭化珪素層20とを有している。炭化珪素単結晶基板10は、第1主面11と、第1主面11と反対側の第3主面13とを含む。炭化珪素層20は、炭化珪素単結晶基板10と接する第4主面14と、第4主面14と反対側の第2主面12を含む。図1に示されるように、炭化珪素エピタキシャル基板100には、第1方向101に延在する第1フラット16が設けられて入れてもよい。炭化珪素エピタキシャル基板100には、第2方向102に延在する第2フラット(図示せず)が設けられていてもよい。
第1欠陥1および第2欠陥2の数は、たとえば共焦点微分干渉顕微鏡を備える欠陥検査装置を用いて炭化珪素エピタキシャル基板100の第2主面12を観察することにより測定することができる。共焦点微分干渉顕微鏡を備える欠陥検査装置としては、たとえばレーザーテック株式会社製のWASAVIシリーズ「SICA 6X」を用いることができる。対物レンズの倍率は、10倍である。当該欠陥検査装置の検出感度の閾値は、標準試料を用いて取り決められる。当該欠陥検査装置を用いることにより、第1欠陥1および第2欠陥の数を定量的に評価することができる。
次に、本実施形態に係る炭化珪素エピタキシャル基板100の製造装置200の構成について説明する。
次に、本実施形態に係る炭化珪素エピタキシャル基板の製造方法について説明する。
次に、欠陥の広がりを抑制する推定メカニズムについて説明する。
次に、本実施形態に係る炭化珪素半導体装置300の製造方法について説明する。
Claims (8)
- 第1主面を有する炭化珪素単結晶基板と、
前記第1主面上の炭化珪素層とを備え、
前記炭化珪素層は、前記炭化珪素単結晶基板と接する面と反対側の第2主面を含み、
前記第2主面は、{0001}面がオフ方向にオフ角だけ傾斜した面であり、
前記第2主面には、欠陥があり、
前記オフ角をθ°とし、前記第2主面に垂直な方向における前記炭化珪素層の厚みをWμmとし、前記オフ方向を前記第2主面に投影した方向に対して平行な方向における前記欠陥の幅をLμmとし、前記オフ方向に対して垂直であってかつ前記第2主面に対して平行な方向における前記欠陥の幅をYμmとした場合において、
式1および式2の関係を満たす前記欠陥を第1欠陥とし、
前記第2主面に対して垂直な方向から見て、細長い形状を有しており、かつ前記第2主面に対して垂直な方向から見て、前記欠陥の長手方向における幅をAμmとし、前記欠陥の短手方向における幅をBμmとした場合において、式3および式4の関係を満たす前記欠陥を第2欠陥とすると、
前記第2欠陥の数を、前記第1欠陥の数と前記第2欠陥の数との合計で除した値は、0.5よりも大きく、
前記炭化珪素層は、前記第1主面に接するバッファ層を含み、
前記バッファ層が含む窒素原子の濃度は、5×10 17 cm -3 以上1×10 19 cm -3 以下である、炭化珪素エピタキシャル基板。
- 前記炭化珪素層の厚みは、5μm以上100μm以下である、請求項1に記載の炭化珪素エピタキシャル基板。
- 前記オフ角は、0°より大きく8°以下である、請求項1または請求項2に記載の炭化珪素エピタキシャル基板。
- 前記第2欠陥の数を、前記第1欠陥の数と前記第2欠陥の数との合計で除した値は、0.6よりも大きい、請求項1~請求項3のいずれか1項に記載の炭化珪素エピタキシャル基板。
- 前記第2欠陥の数を、前記第1欠陥の数と前記第2欠陥の数との合計で除した値は、0.7よりも大きい、請求項4に記載の炭化珪素エピタキシャル基板。
- 前記第2欠陥の数を、前記第1欠陥の数と前記第2欠陥の数との合計で除した値は、0.8よりも大きい、請求項5に記載の炭化珪素エピタキシャル基板。
- 前記第2欠陥の数を、前記第1欠陥の数と前記第2欠陥の数との合計で除した値は、0.9よりも大きい、請求項6に記載の炭化珪素エピタキシャル基板。
- 請求項1~請求項7のいずれか1項に記載の炭化珪素エピタキシャル基板を準備する工程と、
前記炭化珪素エピタキシャル基板を加工する工程と、を備える、炭化珪素半導体装置の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017015502 | 2017-01-31 | ||
JP2017015502 | 2017-01-31 | ||
PCT/JP2017/043246 WO2018142744A1 (ja) | 2017-01-31 | 2017-12-01 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2018142744A1 JPWO2018142744A1 (ja) | 2019-11-21 |
JP7070437B2 true JP7070437B2 (ja) | 2022-05-18 |
Family
ID=63040415
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018565960A Active JP7070437B2 (ja) | 2017-01-31 | 2017-12-01 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10811500B2 (ja) |
JP (1) | JP7070437B2 (ja) |
CN (1) | CN110214363B (ja) |
DE (1) | DE112017006965T5 (ja) |
WO (1) | WO2018142744A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018142668A1 (ja) * | 2017-01-31 | 2018-08-09 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
JP7310822B2 (ja) * | 2018-08-21 | 2023-07-19 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法 |
WO2022153918A1 (ja) * | 2021-01-15 | 2022-07-21 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011074453A1 (ja) | 2009-12-14 | 2011-06-23 | 昭和電工株式会社 | SiCエピタキシャルウェハ及びその製造方法 |
JP2013014469A (ja) | 2011-07-04 | 2013-01-24 | Panasonic Corp | SiCエピタキシャル基板およびその製造方法 |
JP2015051895A (ja) | 2013-09-06 | 2015-03-19 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板、炭化珪素エピタキシャル基板の製造方法、炭化珪素半導体装置の製造方法、炭化珪素成長装置および炭化珪素成長装置用部材 |
JP2015143168A (ja) | 2014-01-31 | 2015-08-06 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素エピタキシャル基板の製造方法 |
JP2015185653A (ja) | 2014-03-24 | 2015-10-22 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
JP2017043525A (ja) | 2015-08-28 | 2017-03-02 | 昭和電工株式会社 | SiCエピタキシャルウェハ及びその製造方法 |
JP2017145150A (ja) | 2016-02-15 | 2017-08-24 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010131573A1 (ja) * | 2009-05-11 | 2010-11-18 | 住友電気工業株式会社 | 絶縁ゲート型バイポーラトランジスタ |
JP2014170891A (ja) | 2013-03-05 | 2014-09-18 | Sumitomo Electric Ind Ltd | 炭化珪素基板、炭化珪素基板の製造方法および炭化珪素半導体装置の製造方法 |
JP6679229B2 (ja) | 2015-06-30 | 2020-04-15 | キヤノン株式会社 | 被検体情報取得装置及び光源装置 |
WO2018142668A1 (ja) * | 2017-01-31 | 2018-08-09 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
-
2017
- 2017-12-01 DE DE112017006965.3T patent/DE112017006965T5/de active Pending
- 2017-12-01 WO PCT/JP2017/043246 patent/WO2018142744A1/ja active Application Filing
- 2017-12-01 CN CN201780084639.4A patent/CN110214363B/zh active Active
- 2017-12-01 US US16/482,505 patent/US10811500B2/en active Active
- 2017-12-01 JP JP2018565960A patent/JP7070437B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011074453A1 (ja) | 2009-12-14 | 2011-06-23 | 昭和電工株式会社 | SiCエピタキシャルウェハ及びその製造方法 |
JP2013014469A (ja) | 2011-07-04 | 2013-01-24 | Panasonic Corp | SiCエピタキシャル基板およびその製造方法 |
JP2015051895A (ja) | 2013-09-06 | 2015-03-19 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板、炭化珪素エピタキシャル基板の製造方法、炭化珪素半導体装置の製造方法、炭化珪素成長装置および炭化珪素成長装置用部材 |
JP2015143168A (ja) | 2014-01-31 | 2015-08-06 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素エピタキシャル基板の製造方法 |
JP2015185653A (ja) | 2014-03-24 | 2015-10-22 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
JP2017043525A (ja) | 2015-08-28 | 2017-03-02 | 昭和電工株式会社 | SiCエピタキシャルウェハ及びその製造方法 |
JP2017145150A (ja) | 2016-02-15 | 2017-08-24 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN110214363A (zh) | 2019-09-06 |
JPWO2018142744A1 (ja) | 2019-11-21 |
WO2018142744A1 (ja) | 2018-08-09 |
US10811500B2 (en) | 2020-10-20 |
US20200013858A1 (en) | 2020-01-09 |
DE112017006965T5 (de) | 2019-10-17 |
CN110214363B (zh) | 2023-07-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6856156B2 (ja) | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 | |
JP6969578B2 (ja) | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 | |
CN108028185B (zh) | 碳化硅外延基板及制造碳化硅半导体装置的方法 | |
JP6798293B2 (ja) | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 | |
WO2017056691A1 (ja) | 炭化珪素エピタキシャル基板の製造方法、炭化珪素半導体装置の製造方法および炭化珪素エピタキシャル基板の製造装置 | |
JP7070437B2 (ja) | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 | |
JP6891758B2 (ja) | 炭化珪素エピタキシャル基板及び炭化珪素半導体装置の製造方法 | |
JP7415558B2 (ja) | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 | |
JP6954316B2 (ja) | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 | |
JP2015119083A (ja) | 炭化珪素半導体基板および炭化珪素半導体装置ならびにそれらの製造方法 | |
WO2018123148A1 (ja) | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 | |
JP7388365B2 (ja) | 炭化珪素エピタキシャル基板および炭化珪素半導体装置 | |
JP6090552B1 (ja) | 炭化珪素エピタキシャル基板の製造方法、炭化珪素半導体装置の製造方法および炭化珪素エピタキシャル基板の製造装置 | |
JP6658257B2 (ja) | 炭化珪素半導体装置 | |
US20230261057A1 (en) | Silicon carbide epitaxial substrate and method of manufacturing silicon carbide epitaxial substrate | |
CN112335057B (zh) | 碳化硅外延衬底及碳化硅半导体器件 | |
JP7036095B2 (ja) | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 | |
JPWO2020017208A1 (ja) | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 | |
JPWO2019216024A1 (ja) | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20201021 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210914 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20211109 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211207 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220405 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220418 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7070437 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |