JP7067837B2 - 多層フィルムコンデンサ - Google Patents
多層フィルムコンデンサ Download PDFInfo
- Publication number
- JP7067837B2 JP7067837B2 JP2020136552A JP2020136552A JP7067837B2 JP 7067837 B2 JP7067837 B2 JP 7067837B2 JP 2020136552 A JP2020136552 A JP 2020136552A JP 2020136552 A JP2020136552 A JP 2020136552A JP 7067837 B2 JP7067837 B2 JP 7067837B2
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- Prior art keywords
- composite laminate
- thermoplastic
- conductive
- layer
- electrode
- Prior art date
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Description
εeff=Cd/(ε0A) 式(1)
ここで、Cは、平面電極間に配置された場合の複合積層体の静電容量であり、Aは、平面電極間の複合積層体の表面積であり、dは複合積層体の厚さであり、ε0は自由空間の誘電率である。層状材料では、電界と比誘電率(即ち、誘電関数)との積である変位場の法線成分は、層にわたって連続的である。この条件によれば、所定の印加電荷に対するコンデンサ両端の電圧分布を決定し、これによって、静電容量、ひいては実効誘電関数を決定することができる。結果として得られる実効誘電関数は、
1/εeff=(1/d)Σdi/εi 式(2)、と表される。
ここで、diは層iの厚さであり、d=Σdiは積層体の厚さであり、εiは層iの誘電関数(比誘電率)である。したがって、多層積層体の実効誘電関数は、個々の層の層の厚さ及び誘電関数によって決定される。
コンデンサでの使用に好適な複合積層体を調製して試験したか、又はモデル化した。本明細書の実施例及びその他の部分における全ての割合、百分率、比率等は全て、特に明記しない限り、重量による。
Alpha-A High Temperature Broadband Dielectric Spectrometerモジュール測定システム(Novocontrol Technologies,Aubaschstr,Germanyから入手可能)を用いて、1MHz未満で膜面に垂直な誘電特性及び導電率を測定した。このシステムでは、0.00001Hz~20MHzの離散周波数での周波数領域測定がサポートされ、10mΩから最大1014Ωまでのインピーダンスを最大4.2VACまで測定することができる。これらの実験では、最大1000ボルトのピークツーピーク電圧の可変AC電圧を使用した。
GHzの周波数範囲まで、DCにおける浸透半導性挙動を示すカーボンブラック充填共押出性熱可塑性樹脂を調製した。Wabash Press hot and cold platen press(Wabash MPI,Wabash,INから入手可能)を使用して、RTP 199X13007481EG(ポリプロピレンと約20~30重量%のカーボンブラック(RTP Company,Winona,MNから入手可能であり、本明細書では「RTP PP w/CB」と称する)との配合物)を受取ペレットからプレスする、即ち、3分間予熱した後、500°F(260℃)で3分間ホットプレスし、5℃で3分間コールドプレスして、最終厚さ250μmにした。
複合積層体が共押出可能であり、かかる構造により低損失正接を得られることを示すために、さまざまな熱可塑性絶縁層を含む複合積層体を異なる等級のポリプロピレンから調製した。この積層体は、3つのタイプA共押出多層(図1の絶縁層120に対応する)から構成された。タイプAの多層の各々は、等級1024のポリプロピレン(ExxonMobil,Irving,TXからPP1024E4として入手可能)の7つのサブレイヤを含んでいた。タイプAの多層は、2つのタイプBの共押出多層(各タイプBの多層は図1の導電層150の非導電性バージョンに対応する)によって分離された。タイプBの多層の各々は、等級3230のポリプロピレン(Total Petrochemicals,Houston,TXから入手可能)の22のサブレイヤから構成された。
多層ポリマー構造は、1GHz近くの高周波のデバイリラクゼーション共鳴周波数、低周波端での大きな誘電応答、及び全体的な低損失正接を有することを目標として設計されたものである。
導電性熱可塑性層の間に挟まれたポリプロピレン絶縁体領域を有する薄い多層複合積層体を調製し、その特徴を決定した。当該積層体は、等級1024のポリプロピレン(ExxonMobil,Irving,TXからPP1024E4として入手可能)の7つのサブレイヤを各々含む、(図1の絶縁層120に対応する)タイプAの共押出多層の3層から構成された。タイプAの積層体は、(図1の導電層150に対応する)タイプBの共押出された導電層の2層によって分離された。導電層は、80重量部のRTP PP w/CB及び20重量部のPRIEX48101(Addcomp Holland B.V.から入手可能な無水マレイン酸変性イオノマーPPランダムコポリマー)を、Maddock混合ヘッドを有する標準圧縮スクリューを備えた2.5インチ(1cm)Davis-Standard単軸スクリュー押出機の中で共に配合して、押出によって調製し、歯車ポンプ及びネックチューブを介してフィードブロックに供給された。押出機並びにネックチューブ及びギアポンプの最終温度は520°F(271℃)であった。
第1電極と、第2電極と、第1電極と第2電極との間に配設された複合積層体と、を備え、
当該複合積層体は、
1つ以上の熱可塑性導電層と、
当該1つ以上の熱可塑性導電層に隣接して配設された1つ以上の熱可塑性絶縁層と、を含み、
当該1つ以上の熱可塑性導電層は総厚さTCを有し、当該1つ以上の熱可塑性絶縁層は総厚さTIを有し、TC/TIは3を超える。
第1電極と、第2電極と、第1電極と第2電極との間に配設された複合積層体と、を備え、
当該複合積層体は、
2つ以上の熱可塑性導電層と、
当該2つ以上の熱可塑性導電層が散在している2つ以上の熱可塑性絶縁層と、
当該2つ以上の熱可塑性導電層のうちの少なくとも1つは、浸透閾値よりも高い濃度で複数の導電性粒子と配合された熱可塑性ポリマーを含む。
少なくとも1つの熱可塑性絶縁材料を提供するステップと、
少なくとも1つの熱可塑性導電材料を提供するステップと、
少なくとも1つの熱可塑性絶縁材料と少なくとも1つの熱可塑性導電材料とを共押出して複合積層体を形成するステップと、
当該複合積層体を延伸するステップと、
当該複合積層体の第1側に第1の電極を貼り付けるステップと、複合積層体の第1側と反対側の複合積層体の第2側に第2の電極を貼り付けるステップと、を備え、
当該複合積層体は、
総厚さTCを有する1つ以上の導電層と、総厚さTIを有する1つ以上の絶縁層と、を含み、
TC/TIは3を超える。
Claims (5)
- 第1電極と、第2電極と、前記第1電極と前記第2電極との間に配設されかつ延伸されている複合積層体と、を備え、
前記複合積層体は、
前記第1電極および前記第2電極と平行に配設された2つ以上の熱可塑性導電層と、
前記第1電極および前記第2電極と平行に配設されかつ前記2つ以上の熱可塑性導電層が散在している2つ以上の熱可塑性絶縁層と、を含み、
前記2つ以上の熱可塑性導電層は総厚さTCを有し、前記2つ以上の熱可塑性絶縁層は総厚さTIを有し、TC/TIは3を超え、
前記複合積層体は、500V/μmを超える絶縁破壊強度を有し、
前記複合積層体は、前記絶縁破壊強度の95%の電圧振幅を有する60Hzの電圧が前記複合積層体全体に印加されるときのエネルギー密度が6J/ccを超える、
コンデンサ。 - 前記絶縁破壊強度が1000V/μmを超え、前記エネルギー密度が10J/ccを超える、請求項1に記載のコンデンサ。
- 前記複合積層体が100kHzを超える周波数に共振がある実効誘電関数を有する、請求項1または2に記載のコンデンサ。
- 前記複合積層体が1MHzを超える周波数に共振がある実効誘電関数を有する、請求項1または2に記載のコンデンサ。
- 前記2つ以上の熱可塑性導電層のそれぞれは、ポリプロピレンとカーボンブラックとを含み、
前記2つ以上の熱可塑性絶縁層のそれぞれは、ポリプロピレンを含む、
請求項1ないし4のいずれかに記載のコンデンサ。
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Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3689810A (en) * | 1971-04-23 | 1972-09-05 | Wilhelm E Walles | All-plastic electric capacitor |
JPS5823114A (ja) * | 1981-07-31 | 1983-02-10 | 呉羽化学工業株式会社 | 複合フイルム |
US5073814A (en) * | 1990-07-02 | 1991-12-17 | General Electric Company | Multi-sublayer dielectric layers |
JPH05114532A (ja) * | 1991-10-23 | 1993-05-07 | Yoshiyasu Sasa | 積層コンデンサ |
FR2712733B1 (fr) | 1993-11-16 | 1996-02-09 | Bollore Technologies | Procédé de fabrication d'un ensemble électrochimique multicouche comprenant un électrolyte entre deux électrodes et ensemble ainsi réalisé. |
JP3575054B2 (ja) * | 1994-04-22 | 2004-10-06 | 東海ゴム工業株式会社 | 導電性ロールの製造方法 |
US6447875B1 (en) | 1999-07-30 | 2002-09-10 | 3M Innovative Properties Company | Polymeric articles having embedded phases |
CN1258234C (zh) | 2000-08-12 | 2006-05-31 | Lg化学株式会社 | 多组分复合膜及其制备方法 |
US20050082726A1 (en) | 2001-05-25 | 2005-04-21 | Advanced Ceramics Research Inc | Ceramic components having multilayered architectures and processes for manufacturing the same |
US6916440B2 (en) | 2001-05-31 | 2005-07-12 | 3M Innovative Properties Company | Processes and apparatus for making transversely drawn films with substantially uniaxial character |
GB2411661B (en) * | 2002-04-09 | 2005-11-09 | Ngimat Co | Variable capacitors, composite materials |
US8089152B2 (en) * | 2004-09-16 | 2012-01-03 | Nanosys, Inc. | Continuously variable graded artificial dielectrics using nanostructures |
US7244999B2 (en) * | 2005-07-01 | 2007-07-17 | Alps Electric Co., Ltd. | Capacitor applicable to a device requiring large capacitance |
US20090030152A1 (en) | 2005-12-28 | 2009-01-29 | Qiming Zhang | High Electric Energy Density Polymer Capacitors With Fast Discharge Speed and High Efficiency Based On Unique Poly (Vinylidene Fluoride) Copolymers and Terpolymers as Dielectric Materials |
CN100434459C (zh) * | 2006-07-12 | 2008-11-19 | 扬州大学 | 聚酯/石墨纳米导电复合材料的制备方法 |
KR20090081398A (ko) | 2006-10-17 | 2009-07-28 | 맥스웰 테크놀러지스 인코포레이티드 | 에너지 저장 장치를 위한 전극 |
WO2009005555A2 (en) * | 2007-04-11 | 2009-01-08 | The Penn State Research Foundation | Methods to improve the efficiency and reduce the energy losses in high energy density capacitor films and articles comprising the same |
US8611068B2 (en) | 2008-10-16 | 2013-12-17 | Case Western Reserve University | Multilayer polymer dialectric film having a charge-delocalizing interface |
TWI394189B (zh) | 2009-06-04 | 2013-04-21 | Ind Tech Res Inst | 電容基板結構 |
US7911029B2 (en) | 2009-07-11 | 2011-03-22 | Ji Cui | Multilayer electronic devices for imbedded capacitor |
JP2011035205A (ja) | 2009-08-03 | 2011-02-17 | Sony Corp | 電気化学キャパシタ |
US8405955B2 (en) | 2010-03-16 | 2013-03-26 | Corning Incorporated | High performance electrodes for EDLCS |
CN102632675B (zh) * | 2012-04-17 | 2014-07-16 | 电子科技大学 | 一种纳米复合介电薄膜的制备方法 |
KR102331588B1 (ko) * | 2014-05-12 | 2021-11-30 | 캐패시터 사이언시스 인코포레이티드 | 에너지 저장 디바이스 및 이의 생산 방법 |
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