JP7065900B2 - センサ装置およびその製造方法 - Google Patents
センサ装置およびその製造方法 Download PDFInfo
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- JP7065900B2 JP7065900B2 JP2020040779A JP2020040779A JP7065900B2 JP 7065900 B2 JP7065900 B2 JP 7065900B2 JP 2020040779 A JP2020040779 A JP 2020040779A JP 2020040779 A JP2020040779 A JP 2020040779A JP 7065900 B2 JP7065900 B2 JP 7065900B2
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Description
SA…サンプル
RR…反応領域
L…光
RL…反射光
W1…センサ素子の幅
100U…センサユニット
101…基板
102…センサ素子
104…中間層
106…パッシベーション層
106t…パッシベーション層の上面
108…マイクロレンズ構造
108b…マイクロレンズ構造の底部
108bs…マイクロレンズ構造の底面
108s…開口部の側壁
108p…開口部
108t…マイクロレンズ構造の上部
110…第1の反射層
112…平坦化層
112t…平坦化層の上面
A-A’線分
104A…中間層の第1の層
104B…中間層の第2の層
114…表面改質層
116…金属層
T…表面改質層の厚さ
104t…中間層の上面
W2…第2の反射層の幅
W3…開口部の幅
EL…励起光
EL’ …第2の励起光
EL” …散乱光
EL”’…励起光
210…第2の反射層
D1…距離
310…導波路構造
W4…導波路構造の幅
210p…センサ装置の開口部
PR…フォトレジスト
Claims (9)
- サンプルの放射光を検出するセンサ装置であって、
前記放射光を検出する複数のセンサ素子、
前記複数のセンサ素子上に配置された中間層、
前記中間層上に配置されたパッシベーション層、
前記パッシベーション層上に配置された複数のマイクロレンズ構造、
前記複数のマイクロレンズ構造の各々に形成された開口部、
前記複数のマイクロレンズ構造の各々の外側を覆う第1の反射層、
前記複数のマイクロレンズ構造の開口部の各々の下方に重なるように、前記中間層と前記マイクロレンズ構造との間に配置された複数の第2の反射層、および、
前記複数の第2の反射層の各々の上に、前記開口部の各々に重なるように配置され、前記第2の反射層に対して所定の距離によって離間された複数の導波路構造を含み、
前記第1の反射層の各々は、前記マイクロレンズ構造の外側において、前記開口部の内側の側壁の上端から前記パッシベーション層の上面まで延在し、
前記第1の反射層の各々は、前記開口部の内側に配置された前記サンプルから前記センサ素子に対して反対方向に放射された前記放射光を、前記センサ素子に向かって反射するように形成され、
前記第2の反射層の材料は、前記サンプルに照射される励起光に対して高反射の特性を有し、
前記導波路構造は、400nmから750nmの波長範囲で1.5より高い屈折率を有し、
前記第2の反射層の幅は、前記開口部の幅以上であり、
前記導波路構造の幅は、前記開口部の幅以上、かつ、前記第2の反射層の幅以下である、センサ装置。 - 前記第1の反射層の材料は放射光に対して高反射の特性を有する請求項1に記載のセンサ装置。
- 前記マイクロレンズ構造の断面は、半円形、半楕円、三角形、長方形の形状、または前記少なくとも1つのセンサ素子に向かって光を反射させることができる形状である請求項1に記載のセンサ装置。
- 前記マイクロレンズ構造は、1つのセンサ素子に対応する平行光を受光できる構造、又は、1つのセンサ素子に対応する単一の焦点、2つのセンサ素子に対応する2つの焦点、あるいは3つまたは4つのセンサ素子に対応する複数の焦点を有する構造である請求項1に記載のセンサ装置。
- 前記中間層は、フィルタ、パッシベーション材料、金属層、またはそれらの組み合わせを含み、
前記フィルタは金属層によって囲まれ、
前記フィルタは均一フィルタ、画素化フィルタ、阻止フィルタ、またはそれらを組み合わせたフィルタを含む請求項1に記載のセンサ装置。 - 前記開口部は反応領域を含み、前記反応領域は少なくとも1つのセンサ素子に対応する請求項1に記載のセンサ装置。
- サンプルの放射光を検出するセンサ装置を製造する方法であって、
前記放射光を検出する複数のセンサ素子を含む基板を提供するステップ、
前記複数のセンサ素子上に中間層を形成するステップ、
前記中間層上に複数の第2の反射層を形成するステップ、
前記中間層上にパッシベーション層を形成するステップ、
前記パッシベーション層上において、前記複数の第2の反射層の各々に重なる位置に、前記第2の反射層に対して所定の距離によって離間するように、複数の導波路構造を形成するステップ、
前記パッシベーション層上において、前記複数の導波路構造の各々に重なる位置に複数のマイクロレンズ構造を形成するステップ、
前記複数のマイクロレンズ構造の各々の外側を覆う第1の反射層をコンフォーマルに形成するステップ、および
前記第1の反射層の各々の一部および前記マイクロレンズ構造の各々の一部を除去し、前記複数のマイクロレンズ構造の各々に、前記複数の導波路構造の各々に重なるように開口部を形成するステップを含み、
前記第1の反射層の各々は、前記マイクロレンズ構造の各々の外側において、前記開口部の内側の側壁の上端から前記パッシベーション層の上面まで延在し、
前記第1の反射層の各々は、前記開口部の内側に配置された前記サンプルから前記センサ素子に対して反対方向に放射された前記放射光を、前記センサ素子に向かって反射するように形成され、
前記第2の反射層の材料は、前記サンプルに照射される励起光に対して高反射の特性を有し、
前記導波路構造は、400nmから750nmの波長範囲で1.5より高い屈折率を有し、
前記第2の反射層の幅は、前記開口部の幅以上であり、
前記導波路構造の幅は、前記開口部の幅以上、かつ、前記第2の反射層の幅以下である、センサ装置を製造する方法。 - 前記第1の反射層上に平坦化層を形成するステップと、
前記パッシベーション層を形成するステップ及び前記第1の反射層上に平坦化層を形成するステップの前に、前記中間層上に前記第2の反射層を形成するステップを含む請求項7に記載のセンサ装置を製造する方法。 - 前記第2の反射層をパターン化して前記第2の反射層内の開口部を形成するステップと、
前記マイクロレンズ構造を形成するステップ及び前記第2の反射層をパターン化して前記第2の反射層内の開口部を形成するステップの前に前記パッシベーション層上に前記導波路構造を形成するステップを含む請求項8に記載のセンサ装置を製造する方法。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100108865A1 (en) | 2008-11-05 | 2010-05-06 | Samsung Electronics Co., Ltd. | Substrate for detecting samples, bio-chip employing the substrate, method of fabricating the substrate for detecting samples, and apparatus for detecting bio-material |
JP2013004938A (ja) | 2011-06-22 | 2013-01-07 | Sony Corp | 撮像素子、電子機器、製造方法、および検査装置 |
WO2013080473A1 (ja) | 2011-11-30 | 2013-06-06 | ソニー株式会社 | ケミカルセンサ、ケミカルセンサモジュール、化学物質検出装置及び化学物質検出方法 |
WO2013140707A1 (ja) | 2012-03-19 | 2013-09-26 | ソニー株式会社 | ケミカルセンサ、ケミカルセンサの製造方法、化学物質検出装置 |
US20170023731A1 (en) | 2009-09-11 | 2017-01-26 | Pacific Biosciences of Califorina, Inc. | Method for preparing solid state nanopores |
US20180155782A1 (en) | 2016-11-03 | 2018-06-07 | Complete Genomics, Inc. | Biosensors for biological or chemical analysis and methods of manufacturing the same |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997035181A1 (en) | 1996-03-19 | 1997-09-25 | University Of Utah Research Foundation | System for determining analyte concentration |
KR100533166B1 (ko) * | 2000-08-18 | 2005-12-02 | 매그나칩 반도체 유한회사 | 마이크로렌즈 보호용 저온산화막을 갖는 씨모스이미지센서및 그 제조방법 |
JP2002299594A (ja) * | 2001-04-03 | 2002-10-11 | Toppan Printing Co Ltd | 赤外線反射膜を有する固体撮像素子及びその製造方法 |
US6563117B2 (en) | 2001-06-02 | 2003-05-13 | Ilya Feygin | Article comprising IR-reflective multi-well plates |
KR100672687B1 (ko) * | 2005-06-03 | 2007-01-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
KR100710210B1 (ko) * | 2005-09-28 | 2007-04-20 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
US20070284687A1 (en) * | 2006-06-13 | 2007-12-13 | Rantala Juha T | Semiconductor optoelectronics devices |
US7505206B2 (en) * | 2006-07-10 | 2009-03-17 | Taiwan Semiconductor Manufacturing Company | Microlens structure for improved CMOS image sensor sensitivity |
KR100884977B1 (ko) * | 2007-10-18 | 2009-02-23 | 주식회사 동부하이텍 | 씨모스 이미지 센서 및 그의 제조 방법 |
EP2221606A3 (en) | 2009-02-11 | 2012-06-06 | Samsung Electronics Co., Ltd. | Integrated bio-chip and method of fabricating the integrated bio-chip |
KR101647779B1 (ko) * | 2009-09-09 | 2016-08-11 | 삼성전자 주식회사 | 이미지 센서, 그 제조 방법, 및 상기 이미지 센서를 포함하는 장치 |
TW201210006A (en) * | 2010-08-25 | 2012-03-01 | Pixart Imaging Inc | Image sensing device |
US8536545B2 (en) | 2010-09-09 | 2013-09-17 | California Institute Of Technology | Delayed emission detection devices and methods |
JP2013088378A (ja) | 2011-10-21 | 2013-05-13 | Sony Corp | ケミカルセンサ、ケミカルセンサモジュール、生体分子検出装置及び生体分子検出方法 |
KR101352433B1 (ko) * | 2012-04-04 | 2014-01-24 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조 방법 |
JP6057728B2 (ja) * | 2013-01-16 | 2017-01-11 | キヤノン株式会社 | 固体撮像装置の製造方法 |
WO2015074001A1 (en) | 2013-11-17 | 2015-05-21 | Quantum-Si Incorporated | Optical system and assay chip for probing, detecting and analyzing molecules |
TWI571626B (zh) * | 2015-07-15 | 2017-02-21 | 力晶科技股份有限公司 | 具有奈米腔的集成生物感測器及其製作方法 |
US9778191B2 (en) | 2016-02-05 | 2017-10-03 | Personal Genomics, Inc. | Optical sensing module |
US9859323B1 (en) * | 2016-06-13 | 2018-01-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Complementary metal-oxide-semiconductor (CMOS) image sensor |
KR102350605B1 (ko) * | 2017-04-17 | 2022-01-14 | 삼성전자주식회사 | 이미지 센서 |
KR102498582B1 (ko) * | 2018-02-26 | 2023-02-14 | 에스케이하이닉스 주식회사 | 파티션 패턴들을 가진 이미지 센서 |
-
2019
- 2019-10-04 US US16/593,417 patent/US10957731B1/en active Active
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- 2020-05-11 TW TW109115552A patent/TWI747277B/zh active
- 2020-06-11 CN CN202010528635.4A patent/CN112614858B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100108865A1 (en) | 2008-11-05 | 2010-05-06 | Samsung Electronics Co., Ltd. | Substrate for detecting samples, bio-chip employing the substrate, method of fabricating the substrate for detecting samples, and apparatus for detecting bio-material |
US20170023731A1 (en) | 2009-09-11 | 2017-01-26 | Pacific Biosciences of Califorina, Inc. | Method for preparing solid state nanopores |
JP2013004938A (ja) | 2011-06-22 | 2013-01-07 | Sony Corp | 撮像素子、電子機器、製造方法、および検査装置 |
WO2013080473A1 (ja) | 2011-11-30 | 2013-06-06 | ソニー株式会社 | ケミカルセンサ、ケミカルセンサモジュール、化学物質検出装置及び化学物質検出方法 |
WO2013140707A1 (ja) | 2012-03-19 | 2013-09-26 | ソニー株式会社 | ケミカルセンサ、ケミカルセンサの製造方法、化学物質検出装置 |
US20180155782A1 (en) | 2016-11-03 | 2018-06-07 | Complete Genomics, Inc. | Biosensors for biological or chemical analysis and methods of manufacturing the same |
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