JP7061187B2 - Charged particle beam device, sample processing method and observation method - Google Patents

Description

The present invention relates to a charged particle beam device, a sample processing method, and an observation method.

Pretreatment of samples observed with a transmission electron microscope (TEM) or scanning transmission electron microscope (STEM) using a focused ion beam (FIB) device or ion milling device is widely used in various fields including the semiconductor field. It has been. At this time, it is necessary to move the sample from the device for performing the pretreatment to the device for observing, and a method for easily sharing the information of the observation target such as the position information of the pretreated portion is desired between the devices. There is. As such a technique, for example, in Patent Document 1, a sample holder that can be shared between devices is prepared, and the sample holder is provided with a storage medium for recording the information of the observation target, thereby sharing the information of the observation target. The method is disclosed. Patent Document 2 discloses a sample holding device for a charged particle beam device in which a sample cartridge supporting a sample is provided with a storage medium for storing data related to the sample.

Japanese Unexamined Patent Publication No. 2006-156263 Japanese Unexamined Patent Publication No. 2001-291483

However, since the methods described in Patent Documents 1 and 2 use a storage medium in which the information can be rewritten, the written information to be observed may be lost. In addition, there is a possibility that a mistake may occur when attaching or detaching the sample from the sample holder or the sample cartridge. Further, it is troublesome because the user has to move or rewrite the information every time the sample is attached or detached.

Therefore, the present invention provides a charged particle beam device, a sample processing method, and an observation method that facilitate movement between devices in observing a sample that requires movement between a plurality of devices.

One of the representative charged particle beam devices of the present invention is a charged particle beam device that processes an observation target on a sample using a charged particle beam, in which the sample stage on which the sample is placed and the observation target are observed. It is characterized by including an observation unit for writing an observation unit and a writing unit for writing information of the observation target at a writing position of the sample.

Further, one of the charged particle beam devices of the present invention is a charged particle beam device for observing an observation target on a sample using a charged particle beam, in which a sample stage on which the sample is placed and the charged particle beam are used. The observation unit includes an observation unit for observing the sample and a control unit for reading the information of the observation target, and the observation unit observes the information of the observation target written in the writing position of the sample and the control unit. Reads the positional relationship between the position of the observation target and the writing position from the information of the observation target, and the sample stage moves the observation target to the irradiation position of the charged particle beam based on the positional relationship. The observation unit is characterized in that it observes the observation target.

One of the typical sample processing methods of the present invention is a method of processing a sample using a charged particle beam device, in which a step of inserting the sample into the charged particle beam device and an observation target on the sample are observed. It is characterized by including a step of writing the information of the observation target at the writing position of the sample.

One of the typical observation methods of the present invention is an observation method for observing an observation target on a sample using a charged particle beam device, in which a step of observing the information of the observation target written on the sample and the above-mentioned It includes a step of determining the position of the observation target from the information of the observation target, a step of moving the sample so that the determined position of the observation target can be observed, and a step of observing the observation target. It is characterized by that.

According to the present invention, it is possible to facilitate the movement between devices when observing a sample that requires movement between a plurality of devices.

Issues, configurations and effects other than those described above will be clarified by the following description of the embodiments.

The schematic diagram which shows the charged particle beam apparatus which concerns on 1st Embodiment. The flowchart which shows the processing method of the sample which concerns on 1st Embodiment. The schematic diagram which shows the operation of the charged particle beam apparatus 1 at the time of processing a sample. The schematic diagram which shows the operation of the charged particle beam apparatus 1 at the time of processing a sample. The schematic diagram which shows the operation of the charged particle beam apparatus 1 at the time of processing a sample. The schematic diagram which shows the operation of the charged particle beam apparatus 1 at the time of processing a sample. The schematic diagram which shows the operation of the charged particle beam apparatus 1 at the time of processing a sample. The schematic diagram which shows the operation of the charged particle beam apparatus 1 at the time of processing a sample. Schematic diagram showing an example of a pattern written on a sample. Schematic diagram showing an example of a pattern written on a sample. Schematic diagram showing an example of a pattern written on a sample. The schematic which shows an example of the GUI screen. The schematic diagram which shows the TEM apparatus which concerns on 1st Embodiment. The flowchart which shows the observation method of the sample which concerns on 1st Embodiment. The schematic which shows an example of the GUI screen. The schematic diagram which shows the charged particle beam apparatus which concerns on 2nd Embodiment. The flowchart which shows the observation method of the sample which concerns on 2nd Embodiment. The schematic diagram which shows an example of a writing position. The schematic diagram which shows an example of a writing position. The schematic diagram which shows an example of a writing position. The schematic diagram which shows an example of a writing position.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are used exclusively for understanding the invention and do not reduce the scope of rights. Further, the same reference numbers are assigned to the common configurations in each figure.

(1) First Embodiment <Structure example of a charged particle beam device for processing a sample>
The configuration of the charged particle beam apparatus 1 according to the first embodiment will be described with reference to FIG. 1. FIG. 1 is a schematic view showing a charged particle beam device 1 according to the present embodiment.

As shown in FIG. 1, the charged particle beam apparatus 1 is a sample on which an ion beam column 101a (writing unit), an ion beam column controller 131, an electron beam column 102a, an electron beam column controller 132, and a sample 103 are placed. Stage 104, sample stage controller 134, sample chamber 105, charged particle detector 106 (observing unit), charged particle detector 107, detector controllers 136 and 137, X-ray detector 109, X-ray detector controller 139 , An integrated computer 130 (control unit), an input device 151, and a display 152 (display unit).

The ion beam column 101a includes components necessary for a FIB device, such as an ion source for generating an ion beam 101b, a lens for focusing the ion beam 101b, and a deflection system for scanning and shifting the ion beam 101b. It is a system that includes all. Gallium ions are generally used as the ion beam 101b, but the ion species can be appropriately changed depending on the purpose of processing or observation. Further, the ion beam 101b is not limited to the focused ion beam, and may be a broad ion beam.

The ion beam column controller 131 controls the ion beam column 101a. For example, the generation of the ion beam 101b by the ion source of the ion beam column 101a, the driving of the deflection system, and the like are controlled.

The electron beam column 102a includes components necessary for an SEM device, such as an electron source for generating an electron beam 102b, a lens for focusing the electron beam 102b, and a deflection system for scanning and shifting the electron beam 102b. It is a system that includes all.

The electron beam column controller 132 controls the electron beam column 102a. For example, the generation of the electron beam 102b by the electron source of the electron beam column 102a, the driving of the deflection system, and the like are controlled.

The ion beam 101b that has passed through the ion beam column 101a and the electron beam 102b that has passed through the electron beam column 102a mainly focus on the cross point 171 that is the intersection of the optical axis 101c of the ion beam column and the optical axis 102c of the electron beam column. Will be done.

In the present embodiment, as shown in FIG. 1, the ion beam column 101a is vertically arranged and the electron beam column 102a is tilted, but the present invention is not limited to this, and the ion beam column 101a is tilted and the electron beam is arranged. The column 102a may be arranged vertically. Further, both the ion beam column 101a and the electron beam column 102a may be inclined. Instead of the ion beam column 101a and the electron beam column 102a, a triple column configuration may be provided in which a gallium focused ion beam column, an argon focused ion beam column and an electron beam column are provided. Further, the charged particle beam device 1 may include only the ion beam column 101a or may include only the electron beam column 102a. That is, the sample 103 can be processed and observed only by the ion beam column 101a or the electron beam column 102a. Further, the electron beam column 102a is not limited to the SEM device, but may be a TEM device or a STEM device for observing using electrons transmitted through the sample.

The sample stage 104 is provided in the sample chamber 105 at a position where the sample 103 can be irradiated with the ion beam 101b and the electron beam 102b. The drive of the sample stage 104 is controlled by the sample stage controller 134, and the sample stage 104 can be moved in a plane, vertically, or rotated. By driving the sample stage 104, the position and orientation of the sample 103 can be changed. The sample stage 104 is moved so that a desired portion on the sample 103 is located, for example, at the irradiation position of the ion beam 101b or the irradiation position of the electron beam 102b.

The charged particle detector 106 detects charged particles generated when the sample 103 is irradiated with the electron beam 102b. The charged particle detector 107 detects charged particles generated when the sample 103 is irradiated with the ion beam 101b. As the charged particle detectors 106 and 107, composite charged particle detectors capable of detecting not only electrons but also ions may be used.

The detector controller 136 controls the charged particle detector 106. The detector controller 137 controls the charged particle detector 107 . The detector controllers 136 and 137 include a circuit or an arithmetic processing unit (not shown) that arithmetically processes and images the detection signals from the charged particle detectors 106 and 107, respectively.

The X-ray detector 109 detects the X-rays emitted by the sample 103. A mass spectrometer or the like may be mounted instead of the X-ray detector 109.

The X-ray detector controller 139 controls the X-ray detector 109. The X-ray detector controller 139 includes a circuit or an arithmetic processing unit (not shown) that arithmetically processes and images the detection signal from the X-ray detector 109.

The integrated computer 130 can communicate with each other with the ion beam column controller 131, the electron beam column controller 132, the sample stage controller 134, the detector controllers 136 and 137, and the X-ray detector controller 139, respectively. It controls the operation of the entire charged particle beam device 1. The integrated computer 130 controls each of the above controls according to an instruction from the user by the input device 151 or according to preset conditions, writes a pattern on the sample 103, and reads information on an observation target based on the pattern. , Observe the observation target, etc. Further, the integrated computer 130 includes a storage unit (not shown) for storing information and the like received from each controller of the charged particle beam device 1.

The input device 151 is a device for the user to input various instructions such as input of information to be observed, change of irradiation conditions of ion beam 101b and electron beam 102b, and change of position of sample stage 104. For example, a keyboard, a mouse, or the like can be used as an input device.

The display 152 displays the GUI screen 153 and the like. The GUI screen 153 is a screen for controlling each configuration of the charged particle beam device 1, and when various instructions are input to the GUI screen 153, the instructions are transmitted to the integrated computer 130. As the GUI screen 153, the display 152 displays, for example, a screen for inputting information on the observation target, a screen showing the state of each configuration of the charged particle beam device 1, and information (including an image) of the observation target acquired by observation. A screen for changing the irradiation conditions of the ion beam 101b and the electron beam 102b, an instruction screen for changing the position of the sample stage 104, and the like can be displayed. The display 152 may be one or a plurality of displays 152.

In addition to the above, the sample chamber 105 may be equipped with a gas deposition unit (not shown) and a microprobe 110. The gas deposition unit and the microprobe 110 each have a controller for controlling their drive.

The gas deposition unit is used for preparing and marking a protective film on the sample 103, and stores depot gas that forms a deposit film by irradiation with a charged particle beam. Depot gas can be supplied from the tip of the nozzle as needed.

The microprobe 110 includes a probe that can be moved in the sample chamber 105 by the probe driving unit. The microprobe 110 picks up a specific part of the sample 103 processed or cut by the ion beam column 101a. The probe can also be used to extract a minute sample piece formed on the sample 103 or to supply an electric potential to the sample by contacting the surface of the sample 103.

The sample chamber 105 may be equipped with a decompression device for vacuum exhaust, a cold trap, an optical microscope, and the like. Further, the sample chamber 105 may be equipped with a detector such as a tertiary electron detector, a STEM detector, a backscattering electron detector, or a low energy loss electron detector.

<Sample processing method>
Next, with reference to FIGS. 2 to 5, a method for processing a sample by the charged particle beam apparatus 1 according to the present embodiment will be described. In the following, it is assumed that a TEM (or STEM) sample is processed by using a FIB-SEM device in which the ion beam column 101a of the charged particle beam device 1 is used as a FIB device and the electron beam column 102a is used as an SEM device.

In the present embodiment, the first sample 103 is a sample having a portion to be observed, for example, a wafer, a semiconductor material, a printed circuit board, or the like. The second sample 113 is a TEM (or STEM) sample including the observation target 173 collected from the first sample 103 and the support member 183 of the observation target 173. The support member 183 is, for example, a notch mesh or a mesh.

FIG. 2 is a flowchart showing a sample processing method according to the present embodiment. 3A to 3F are schematic views showing the operation of the charged particle beam apparatus 1 at the time of processing the sample according to the present embodiment. In FIG. 3, for simplification of the illustration, the configurations other than the ion beam column 101a, the sample stage 104, and the microprobe 110 of the charged particle beam apparatus 1 are not shown. 4A-4C are diagrams showing an example of a pattern written on a sample. FIG. 5 is a diagram showing an example of a GUI screen.

First, in step S1, the user inserts the first sample 103 into the sample chamber 105 of the charged particle beam apparatus 1 and places it on the sample stage 104 (FIG. 3A).

In step S2, the sample stage controller 134 receives an instruction input from the GUI screen 153 by the user or a preset position 172 to be observed from the integrated computer 130, and moves the sample stage 104. The user confirms the position 172 to be observed in the first sample 103 by using the ion beam column 101a or the electron beam column 102a (FIG. 3B). The position 172 may be arbitrarily determined by the user in this step S2, or may be a preset position. If the position 172 is preset, the user may fine-tune the position 172 by inputting an instruction from the GUI screen 153. The confirmed position 172 is transmitted to the integrated computer 130.

In step S3, the integrated computer 130 transmits the position 172 confirmed in step S2 to the ion beam column controller 131. The ion beam column controller 131 drives the ion beam column 101a and cuts out the observation target 173 from the position 172 by the ion beam 101b (FIG. 3C). The integrated computer 130 transmits the position 172 to the probe drive unit, which drives the microprobe 110 and picks up the observation target 173 from the position 172 (FIG. 3D).

In step S4, the user retracts the first sample 103 from the sample stage 104 and inserts a support member 183 for supporting the observation target 173 into the charged particle beam device 1. 3A to 3F show an example in which the support member 183 is a notched mesh. The support member 183 may be supported by the sample stage 104 or may be supported by a different sample stage.

In step S5, the user confirms the position of the observation target 173 and the mounting position on the support member 183 on which the observation target 173 is mounted by the ion beam column 101a or the electron beam column 102a (FIG. 3E). At this time, the user instructs the integrated computer 130 by inputting the position of the observation target 173 and the mounting position of the support member 183 to the GUI screen 153.

In step S6, the probe driving unit receives the position of the observation target 173 and the mounting position of the support member 183 from the integrated computer 130. Then, the probe driving unit drives the microprobe 110 to mount the picked-up observation target 173 at the mounting position on the support member 183 confirmed in step S5, and uses it as the second sample 113 (FIG. 3E). At this time, it is preferable to fix the observation target 173 to the support member 183 by using, for example, a fixing gas. As the fixing gas, for example, phenanthrene (C ₁₄ H ₁₀ ), hexacarbonyl tungsten (W (CO) ₆ ) or the like can be used.

In step S7, the user confirms with the ion beam column 101a or the electron beam column 102a whether or not the observation target 173 on the support member 183 is mounted at the mounting position.

In step S8, the sample stage controller 134 drives the sample stage 104 so that the writing position 174 for writing information about the observation target 173 is located at the irradiation position of the ion beam 101b, and moves the second sample 113. .. At this time, the integrated computer 130 stores the positional relationship between the position of the observation target 173 and the writing position 174. The positional relationship can be, for example, a vector indicating the moving distance and the moving direction from the observation target 173 to the writing position 174, the displacement of the X coordinate and the Y coordinate, and the like. Further, the integrated computer 130 may further store the coordinates of the writing position 174.

In step S9, the user appropriately inputs information on the other observation target 173 to the GUI screen 153 shown in FIG. 5 using the input device 151. The GUI screen 153 has a place to input the identification number (name, lot number, etc.) of the observation target 173, the position, size, composition, comment, work date, etc. of the observation target 173 as the information of the observation target 173. You may. After the user inputs the information of the observation target 173, the integrated computer 130 receives the input information of the observation target 173 by clicking the "Write" button on the GUI screen 153.

The integrated computer 130 writes a pattern to be written in the second sample 113 based on the positional relationship between the position of the observation target 173 stored in step S8 and the writing position 174 and the information of the observation target 173 input in step S9. Generate. When the user clicks the "Write" button without inputting the information of the observation target 173, a pattern is generated based only on the positional relationship between the position of the observation target 173 and the writing position 174 stored in step S8. The pattern may be a character (FIG. 4A) or a two-dimensional pattern such as a barcode (FIG. 4B) or a QR code (registered trademark) (FIG. 4C). The shape of the pattern to be written can be appropriately changed according to the purpose.

In step S10, the ion beam column controller 131 receives the pattern generated by the integrated computer 130, drives the ion beam column 101a to irradiate the ion beam 101b, and writes the pattern at the writing position 174 (FIG. 3F). .. As shown in FIG. 3F, the orientation of the second sample 113 may be changed so that the pattern can be easily written on the surface of the support member 183 that is not the mounting surface of the observation target 173. The writing position of the pattern can also be the mounting surface of the observation target 173 on the support member 183.

The pattern writing means is not limited to the irradiation of the ion beam 101b, and can be appropriately changed. For example, a pattern can be written by a deposit film using an electron beam 102b and a gas deposition unit, pressing, laser processing, etching, or the like. Further, the pattern to be written may or may not penetrate the second sample 113.

In the present embodiment, the positional relationship between the observation target 173 and the writing position 174 is written, but as will be described later in FIGS. 11A to 11D, a reference position is provided separately from the writing position 174, and the reference position and observation are performed. The positional relationship with the target 173 may be written in the writing position 174. The reference position may be a characteristic shape provided in advance on the support member 183, or may be a identifiable position such as the center or end of the support member 183. Further, after writing, a processing mark using an FIB device, a deposit film formed by using an electron beam, or the like can be formed and used as a reference position. Further, the writing position 174 can be used as a reference position.

Finally, in step S11, the user removes the second sample 113 from the charged particle beam device 1 and stores it.

In the present embodiment, since it is assumed that the second sample 113 is processed by the charged particle beam device 1 (FIB-SEM device) and then moved to the TEM device for observation, the second sample 113 is used. Although it was taken out from the charged particle beam device 1, it is not always the case that the second sample 113 is taken out. For example, if the charged particle beam device is equipped with a plurality of analyzers, it may be a process of moving the second sample 113 from the first analysis position to the second analysis position. Also, if the charged particle beam device has a space in which a plurality of samples can be waited or stored, it may be a process of moving the second sample 113 to the waiting place or the storage place.

As described above, in the present embodiment, the case where one observation target 173 is placed on the support member 183 is shown as an example, but there may be a plurality of observation targets 173.

<Structure example of a charged particle beam device for observing a sample>
Next, with reference to FIG. 6, the configuration of the charged particle beam device for observing the sample according to the present embodiment will be described. In this embodiment, observation by the TEM device 6 will be described as an example. FIG. 6 is a schematic view of the TEM device 6 according to the present embodiment.

The TEM device 6 is a device for observing the second sample 113 in which the information of the observation target 173 is written by the charged particle beam device 1. As shown in FIG. 6, the TEM apparatus 6 includes an electron beam column 602a (observation unit), an electron beam column controller 632, a TEM sample stage 614 on which a second sample 113 is placed, and a TEM sample stage controller. 644, sample exchange room 611, charged particle detectors 606 and 608, detector controllers 636 and 638, X-ray detector 609, X-ray detector controller 639, press machine 612, press machine controller 642, integrated computer 630. (Control unit), an input device 651, and a display 652.

The electron beam column 602a includes components necessary for a TEM (or STEM) device, such as an electron source for generating an electron beam, a lens for focusing the electron beam, and a deflection system for scanning and shifting the electron beam. It is a system that includes all. The electron beam that has passed through the electron beam column 602a irradiates the second sample 113.

The electron beam column controller 632 controls the electron beam column 602a. Specifically, it controls the generation of an electron beam by the electron source of the electron beam column 602a, the driving of the deflection system, and the like.

In the present embodiment, as shown in FIG. 6, the electron beam column 602a is arranged vertically, but the present invention is not limited to this, and the electron beam column 602a may be arranged in an inclined manner.

The TEM sample stage 614 is provided in the sample chamber 605 so that the second sample 113 can be irradiated with an electron beam. The drive of the TEM sample stage 614 is controlled by the TEM sample stage controller 644, and the sample stage 614 can be moved in a plane, vertically, and rotated. By driving the TEM sample stage 614, the position and orientation of the second sample 113 can be changed. For example, the TEM sample stage 614 moves so that the sample is positioned at the irradiation position of the electron beam.

The sample exchange chamber 611 is a place for exchanging the TEM sample inserted in the sample chamber 605.

The charged particle detectors 606 and 608 detect charged particles generated when the second sample 113 is irradiated with an electron beam. As the charged particle detectors 606 and 608, a composite charged particle detector capable of detecting not only electrons but also ions may be used.

The detector controller 636 controls the charged particle detector 606. The detector controller 638 controls the charged particle detector 608. The detector controllers 636 and 638 include a circuit or an arithmetic processing unit (not shown) that arithmetically processes and images the detection signal.

Similar to the charged particle beam device 1 shown in FIG. 1, the sample chamber 605 may be equipped with a gas deposition unit, a microprobe, or the like.

The X-ray detector 609 detects the X-rays emitted by the second sample 113. Instead of the X-ray detector 609, a mass spectrometer or the like may be mounted.

The X-ray detector controller 639 controls the X-ray detector 609. The X-ray detector controller 639 includes a circuit or an arithmetic processing unit (not shown) that arithmetically processes and images the detection signal from the X-ray detector 609.

The press machine 612 is a mechanism for writing the information of the observation target 173 obtained by the observation to the second sample 113. In FIG. 6, a press machine 612 is mounted in the sample exchange chamber 611 for writing information, but the means can be changed according to the purpose of writing the information.

The press controller 642 controls the drive of the press 612.

The sample chamber 605 may be equipped with a decompression device for vacuum exhaust, a cold trap, an optical microscope, and the like. Further, the sample chamber 605 may be equipped with a detector such as a tertiary electron detector, a STEM detector, a backscattering electron detector, or a low energy loss electron detector.

The integrated computer 630 can communicate with each other of the electron beam column controller 632, the sample stage controller 644 for TEM, the detector controllers 636 and 638, and the X-ray detector controller 639, respectively, and operates the entire TEM device 6. To control. The integrated computer 630 controls each of the above controllers according to an instruction from the user by the input device 651 or according to preset conditions, reads the information of the observation target 173, and observes the observation target 173 to the second sample 113. Information is written, and the observation target 173 is observed. Further, the integrated computer 630 includes a storage unit (not shown) for storing information and the like received from each controller of the TEM device 6.

The input device 651 is a device for the user to input various instructions such as changing the irradiation conditions of the electron beam and changing the position of the TEM sample stage 614. For example, a keyboard, a mouse, or the like can be used as an input device.

The display 652 displays the GUI screen 653 and the like shown in FIG. The GUI screen 653 is a screen for controlling the TEM device 6, and when various instructions are input to the GUI screen 653 by the input device 651, the instructions are transmitted to the integrated computer 630. The display 652 may be a GUI screen 653, for example, a screen showing the state of each configuration of the TEM device 6, a screen displaying information (including an image) of the observation target 173 acquired by observation, and an observation target obtained by observation. A screen for inputting information of 173, an instruction screen for changing the irradiation conditions of the electron beam, an instruction screen for changing the position of the TEM sample stage 614, and the like can be displayed. The number of displays 652 may be one or a plurality.

In the present embodiment, the STEM device may be used instead of the TEM device 6.

<Sample observation method>
Next, a method of observing the sample by the TEM device 6 according to the present embodiment will be described with reference to FIGS. 7 and 8. FIG. 7 is a flowchart showing a sample observation method according to the present embodiment. FIG. 8 is a schematic view showing a GUI screen 653.

First, in step S12, the user inserts the second sample 113 in which the pattern is written into the TEM device 6 and places it on the TEM sample stage 614.

In step S13, the user searches for a pattern by observing the entire second sample 113 at a low magnification using the electron beam column 602a. The TEM sample stage controller 644 moves the TEM sample stage 614 so that the pattern writing position 174 is located at the electron beam irradiation position.

The pattern writing position 174 may be registered in advance. For example, the pattern writing position 174 can be registered in advance by the user inputting the coordinates of the pattern writing position 174 in step S8 of FIG.

Further, the search for the pattern in step S13 may be performed automatically. When the pattern search is automatically performed, it is preferable that the integrated computer 130 of the charged particle beam apparatus 1 and the integrated computer 630 of the TEM apparatus 6 can communicate with each other. In this case, the integrated computer 630 receives the coordinates of the writing position 174 from the integrated computer 130 and transmits them to the TEM sample stage controller 644. As a result, the TEM sample stage controller 644 can move the TEM sample stage 614 so that the writing position 174 is located at the irradiation position of the electron beam.

In step S14, the electron beam column 602a irradiates the writing position 174 with an electron beam and observes the pattern written on the second sample 113. The observation may use a secondary electron detector or a transmitted electron detector. Further, although not shown in FIG. 6, the TEM device 6 may be separately equipped with a reader such as a camera for observing a pattern. The pattern observing means can be appropriately changed depending on the purpose.

In step S15, the display 652 displays the pattern observed in step S14 as a GUI screen 653. At this time, the user may input an instruction from the GUI screen 653 so that the pattern is focused, and appropriately change the observation magnification of the electron beam column 602a.

In step S16, the integrated computer 630 reads the positional relationship between the position of the observation target 173 and the writing position 174, and other information on the observation target 173 based on the observed pattern.

In step S17, as shown in FIG. 8, the display 652 receives the read information of the observation target 173 from the integrated computer 630 and displays it on the GUI screen 653.

In step S18, the integrated computer 630 transmits the positional relationship between the read position of the observation target 173 and the writing position 174 to the sample stage controller 644 for TEM. The TEM sample stage controller 644 moves the TEM sample stage 614 so that the observation target 173 is located at the irradiation position of the electron beam.

In step S19, the user appropriately increases the observation magnification and observes the observation target 173. The observation may be performed manually or automatically by an integrated computer 630 or the like.

In step S20, the display 652 displays the observation result of the observation target 173. Further, the integrated computer 630 stores the observation result of the observation target 173 in the storage unit. When saving the observation result, it may be saved in association with the information read in step S16.

Finally, in step S21, the user removes the second sample 113 from the TEM device 6 and stores or discards it. When the second sample 113 is stored, the information of the observation target 173 newly obtained by the observation can be written in the second sample 113 by using the press machine 612 before taking out from the TEM device 6. .. Further, in the case of the TEM device 6 provided with a space for storing the second sample 113, the second sample 113 may be moved to the storage location without being taken out from the TEM device 6.

<Technical effect>
As described above, according to the present embodiment, the configuration in which the information of the observation target is written in the sample itself is adopted. Therefore, the information of the observation target can be easily shared between the devices, and the movement between the devices becomes easy. Further, since the information of the observation target is written in the sample itself, the user does not need to associate the sample with the information of the observation target. This point is a great merit when observation and analysis are performed from various angles using a plurality of devices. If the user inputs or moves the information to be observed each time the device is moved, there is a possibility that the information may be mistaken each time. However, if the information to be observed is written in the sample itself, the work of the user is reduced and there is no possibility of mistaking the information. This point is also very excellent from the viewpoint of traceability.

In addition, since the position of the observation target is written on the sample, even if the sample is taken out from the device once, if the sample is inserted again into the device, the sample can be moved so that the same position can be observed, and fixed point observation is possible. It is also convenient when you want to do. Therefore, for example, it is also effective when it is desired to observe the follow-up after leaving the sample in the atmosphere for a certain period of time, or to observe the change after reacting with the gas atmosphere.

(2) Second Embodiment <Structure example of a charged particle beam device for observing a sample>
The configuration of the charged particle beam device 9 according to the second embodiment will be described with reference to FIG. 9. FIG. 9 is a schematic view showing the charged particle beam device 9 according to the second embodiment. The configuration of the charged particle beam device 9 in the present embodiment is the first embodiment in that the press machine 912 and the press machine controller 942 are provided instead of the ion beam column 101a and the ion beam column controller 131. It is different from the charged particle beam device 1. Further, in the charged particle beam device 9, the electron beam column 102a is vertically arranged. Since the other configurations are the same as those of the charged particle beam apparatus 1 of the first embodiment, the description thereof will be omitted.

The press machine 912 is a mechanism for writing information on the sample. The press controller 942 controls the drive of the press 912. The effect obtained thereby is the same as that of the first embodiment. Further, although the press machine 912 is provided in the present embodiment, information can be written on the sample by using the microprobe as the press machine 912.

The charged particle beam device 9 according to the present embodiment observes the observation target 273 of the sample 903 processed or observed by another charged particle beam device or the charged particle beam device 9 in the past, and the information of the observation target 273 is sampled. It is a device for writing to 903. The charged particle beam device 9 can be, for example, an SEM device, a TEM device, a STEM device, or the like.

<Sample observation method>
Next, with reference to FIG. 10, a method of observing the sample by the charged particle beam device 9 according to the second embodiment will be described. FIG. 10 is a flowchart showing a sample observation method according to the present embodiment. The sample observation method according to the present embodiment is different from the first embodiment in that the observation target 273 is searched for and observed, and then the position of the observation target is stored.

First, in step S101, the user inserts the sample 903 into the charged particle beam device 9 and places it on the sample stage 104.

In step S102, the user searches for the observation target 273 on the sample 903 by observing the entire sample 903 using the electron beam column 102a.

The search for the observation target 273 may be performed automatically. In this case, the position of the observation target 273 can be automatically specified, for example, by receiving the position of the observation target 273 from another device that has processed or observed the observation target 273 by the integrated computer 130. Further, the integrated computer 130 can automatically specify the position of the observation target 273 by receiving the position of the observation target 273 stored when the observation target 273 is observed by the charged particle beam device 9 in the past.

In step S103, the sample stage controller 134 moves the sample stage 104 so that the observation target 273 is located at the irradiation position of the electron beam. After that, the user observes the observation target 273 using the electron beam column 102a.

In step S104, the integrated computer 130 stores the position of the observation target 273 on the sample 903. The position of the observation target 273 stored in this step may be the X coordinate and the Y coordinate, or may be the positional relationship with the writing position 274 or the positional relationship with the reference position of the sample 903.

In step S105, the sample stage controller 134 moves the sample stage 104 so that the writing position 274, which is the position where the information of the observation target 273 is written, is located at the position where the writing by the press machine 912 is performed.

The writing position 274 may be arbitrarily set by the user in this step, or may be registered in advance. When the writing position 274 is registered in advance, for example, the writing position 274 in another device that has processed or observed the observation target 273, or the pattern was written when the observation target 273 was observed by the charged particle beam device 9 in the past. The same position as the writing position 274 may be registered, or a different position may be registered.

An example of the writing position 274 in step S105 will be described with reference to FIGS. 11A to 11D. 11A to 11D are schematic views showing an example of the writing position 274. As described above, a reference position may be provided separately from the writing position 274, and the positional relationship between the reference position and the observation target may be written in the writing position 274 of the sample. The reference position may be a characteristic shape provided in advance in the sample, or may be a identifiable position such as the center or end of the sample. Further, after writing, a processing mark using a FIB device, a deposit film using an electron beam, or the like may be formed as a reference position.

FIG. 11A shows a TEM sample 903a prepared by the FIB-SEM apparatus. The reference position for indicating the position of the observation target 273 may be a part of the writing position 274, or as an edge portion such as the first feature point 284 of the mesh 283a as a support member, as shown in FIG. 11A. It may be a point where two ridge lines intersect, such as the second feature point 285. Further, as shown in FIG. 11A, information of a plurality of observation targets 273a to 273c may be written in one writing position 274.

FIG. 11B shows a TEM sample 903b in which the observation target 273 is supported on the mesh 283b. As shown in FIG. 11B, the edge of the mesh 283b may be set as the writing position 274. In addition, there are various types of mesh, and some are pre-engraved with numbers. In that case, those markings may be used as a reference position.

FIG. 11C shows an example of the SEM sample 903c. As shown in FIG. 11C, when one SEM sample 903c has a plurality of positions 272a and 272b to be observed, writing positions 274a and 274b may be provided for each of the plurality of observation targets.

FIG. 11D shows the wafer 903d. In the case of the wafer 903d, the notch 907 indicating the orientation of the wafer 903d may be used as the reference position. In FIG. 11D, two positions 272c and 272d to be observed are shown, but one or two or more may be present. Further, the writing position 274 is not limited to the position shown in the drawing.

In step S106, the user appropriately inputs the information of the observation target 273 to the GUI screen 153 by using the input device 151. The information of the observation target 273 in this step may be input at any stage of steps S101 to S105. After the user inputs the information of the observation target 273 , the integrated computer 130 receives the input information of the observation target 273 by clicking the "Write" button on the GUI screen 153. At this time, the integrated computer 130 generates a writing pattern based on the information regarding the position of the observation target 273 and the input information of the observation target 273.

In step S107, the press controller 942 receives the pattern generated by the integrated computer 130 and drives the press 912 to write the pattern on the sample 903.

Finally, in step S108, the user removes the sample 903 from the device and stores or discards it.

The observation method in the present embodiment is also applicable to the first embodiment.

<Technical effect>
As described above, according to the present embodiment, since the configuration for storing the position of the observation target is adopted, even if the sample is taken out from the device once, the same position can be observed by inserting the sample into the device again. The sample can be moved in such a manner. Therefore, for example, it is particularly effective when it is desired to perform fixed point observation, and it is effective when it is desired to observe the follow-up after leaving the sample in the atmosphere for a certain period of time or to observe the change after reacting with gas atmosphere.

101a: Ion beam column 101b: Ion beam 101c: Ion beam column optical axis 102a, 602a: Electron beam column 102b: Electron beam 102c: Electron beam column optical axis 103, 903: Sample 104: Sample stage 105, 605: Sample Chambers 106, 107, 606, 608: Charged particle detector 109, 609: X-ray detector 130, 630: Integrated computer 131: Ion beam column controller 132, 632: Electron beam column controller 134: Sample stage controller 136 , 137, 636, 638: Detector controller 139, 639: X-ray detector controller 151, 651: Input device 152, 652: Display 153, 653: GUI screen 171: Crosspoint 110: Microprobe 113: Second 172: 272, 272a to 272d: Observation target position 173, 273: Observation target 174, 274, 274a, 274b: Writing position 183: Support member 611: Sample exchange chamber 612, 912: Press machine 614: TEM sample Stage 644: TEM sample Stage controller 642, 942: Press machine controller 284: First feature point 285: Second feature point 283a, 283b: Mesh 903a, 903b: TEM sample 903c: SEM sample 903d: Wafer 907: Notch

Claims (14)

In a charged particle beam device that processes a sample
A cutting part that cuts out the observation target from the sample inserted in the charged particle beam device, and
A probe for placing the observation target cut out from the sample on a support member,
An observation unit for observing the observation target placed on the support member, and an observation unit.
A control unit that acquires information on the observation target,
A charged particle beam apparatus comprising: a writing unit for writing the acquired information of the observation target at a writing position of the support member. In the charged particle beam apparatus according to claim 1,
The charged particle beam apparatus, wherein the information of the observation target includes a positional relationship between the position of the observation target and the writing position. In the charged particle beam apparatus according to claim 2,
The charged particle beam apparatus, wherein the writing position is a reference position having a positional relationship. In the charged particle beam apparatus according to claim 1,
The writing unit is a charged particle beam device characterized in that information of the observation target is written to the support member by a charged particle beam. In the charged particle beam apparatus according to claim 1,
The writing unit is a charged particle beam device including a press machine that writes on the support member. In the charged particle beam apparatus according to claim 1,
The control unit generates a pattern to be written in the support member from the information of the observation target.
A charged particle beam device, characterized in that the information to be observed is written as the pattern. In the charged particle beam apparatus according to claim 1,
With more display
The display unit is a charged particle beam device that displays information of the observation target written on the support member. In a charged particle beam device that observes an observation target using a charged particle beam,
A sample stage on which the observation target is placed and a support member on which the information of the observation target is written is placed, and
An observation unit that observes the observation target using the charged particle beam,
A control unit that reads the information of the observation target,
A writing unit for writing new information of the observed observation target is provided.
The observation unit observes the information of the observation target written in the writing position of the support member, and observes the information.
The control unit reads the positional relationship between the position of the observation target and the writing position from the information of the observation target.
The sample stage moves the observation target to the irradiation position of the charged particle beam based on the positional relationship.
The observation unit observes the observation target and observes the observation target.
The writing unit is a charged particle beam device, characterized in that new information of the observation target obtained by observation of the observation unit is written to the support member . In the charged particle beam apparatus according to claim 8,
The observation unit is characterized in that, before observing the information of the observation target, the information of the observation target written in the support member is searched for at a lower magnification than that of observing the information of the observation target. Charged particle beam device. In the charged particle beam apparatus according to claim 8,
With more display
The display unit is a charged particle beam device that displays information on the observation target observed by the observation unit. In the method of processing a sample using a charged particle beam device,
The step of inserting the sample into the charged particle beam device and
The step of cutting out the observation target from the sample and
The step of inserting the support member into the charged particle beam device and
The step of placing the observation object on the support member, and
A step of observing the observation target placed on the support member, and
The step of acquiring the information of the observation target and
A processing method comprising: a step of writing the acquired information of the observation target at a writing position of the support member. In the processing method according to claim 11,
A processing method further comprising a step of moving the support member after the writing step. In the observation method of observing an observation target using a charged particle beam device,
The step of inserting the support member on which the observation object is placed into the charged particle beam device, and
A step of observing the information of the observation target written in the writing position of the support member, and
A step of determining the position of the observation target from the information of the observation target,
A step of moving the support member so that the determined position of the observation target can be observed, and
The step of observing the observation target and
An observation method comprising: a step of writing new information of the observation target obtained by the observation to the support member . In the observation method according to claim 13,
The observation method, characterized in that the information of the observation target includes a positional relationship between the position of the observation target and the position on the support member in which the information of the observation target is written.

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