JP7052088B2 - 光吸収層及び光吸収層を備えた接合体 - Google Patents
光吸収層及び光吸収層を備えた接合体 Download PDFInfo
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- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
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- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
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- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
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- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
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Description
図2に、本発明の一形態に係る光吸収層の吸収スペクトルと、従来の光吸収層であるCr:YAGの吸収スペクトルを示す。図2に示される通り、レーザー媒質であるNd:YAG、Yb:YAG、Nd、YVO4の発光波長において、従来のCr:YAGよりも高い吸収係数を示す。また、YAG以外のレーザー結晶(Ti-サファイア、Cr-フォルステライト)においても、高い吸収係数を示していることが分かる。
ガラス材料の原料として、酸化チタン、酸化ケイ素、炭酸ナトリウム、及び添加する金属元素の原料を秤量し、混合する。混合は、一般的な混合方法を用いることができ、例えば、乳鉢などを用いて、15分程度混合することができる。次に、混合粉を坩堝に入れ、電気炉等にて100℃以下の温度で脱炭酸処理を行い、続いて溶融を行う。溶融温度と溶融時間は、融液の粘性を見て、調整することが望ましい。例えば、1200~1500℃の温度範囲で、1~3時間の溶融を行うことができる。また、坩堝には、白金坩堝やアルミナ坩堝などを用いることができる。その後、融液を炉から取り出し、急冷する。急冷後は、ガラス転移点でアニールすることで歪を除去することが望ましい。以上により、光吸収層となるクラッドを作製することができる。
また、レーザー媒質(コア)にガラス材料(クラッド)を接合する方法としては、コアの側面部分及びクラッドの接合面を粗化した後、圧力を印加しながら、ガラス転移温度以上で加熱して、熱的に接合することができる。又は、コアの側面部分を粗化した後、これを電気炉に鋳込み型と共に導入し、別の電気炉で溶融したガラス材を流し込むことで接合することができる。
(吸収係数について)
二光束分光光度計(UV-3600 島津製作所)を用いて評価する。
(屈折率について)
分光エリプソメータ(M-2000 J.A.Woollam社)を用いて、反射率から導出する。
(熱膨張係数について)
熱機械分析(TMA:Thermomechanical Analyzer)装置(TMA8310 Rigaku社)を用いて測定する。
ガラス材料の原料として、酸化チタン、酸化ケイ素、炭酸ナトリウム及び酸化ニッケルを秤量し、混合した。次に、この混合粉を800℃で脱炭酸処理を行った後、1300℃、1時間、溶融を行い、その後、炉から取り出して急冷した。急冷後は、600℃にてアニールして、歪を除去して、Niドープ・チタノシリケートガラス(融点:1300℃)を作製した。得られたガラス(クラッド)の特性を評価した結果、吸収係数は5.0cm-1(波長:650~1400nm)であり、屈折率は1.83(波長:1064 nm)、熱膨張係数は7ppm/Kであった。そして、レーザー媒質としてNd:YAGを用いた場合(屈折率:1.82、熱膨張率:8ppm/K)には、屈折率差は0.01、熱膨張率差は1となって、従来と同等又はそれ以上の結果が得られた。またCr:YAG(クラッド)と比較して複合体作製のための加工も容易であった。
2 励起光
3 レーザー媒質(コア)
4 ミラー
5 レーザー
6 寄生発振
7 光吸収層(クラッド)
Claims (2)
- レーザー媒質と光吸収層とを接合した接合体であって、前記光吸収層は、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zr、Nb、Mo、Tc、Ru、Rh、Pd、Ag、Sb、Te、La、Sm、Gd、Dy、Tb、Lu、Biのいずれか一以上の元素を含有するガラス材料からなり、レーザー媒質の発振波長(波長650nm以上1400nm未満)において、0.1~10.0cm-1の吸収係数を有し、レーザー媒質との屈折率差が±0.1以内、レーザー媒質との線熱膨張係数差が±1ppm/K以内であって、前記レーザー媒質が、Nd:YAG、Yb:YAG、Nd:YVO 4 、Ti-サファイア、Cr-フォルステライトのいずれか一種からなることを特徴とする接合体。
- 前記光吸収層は、融点が1500℃未満であることを特徴とする請求項1記載の接合体。
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PCT/JP2019/042123 WO2020144915A1 (ja) | 2019-01-10 | 2019-10-28 | 光吸収層及び光吸収層を備えた接合体 |
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CN114502520B (zh) * | 2020-02-07 | 2023-12-05 | 捷客斯金属株式会社 | Yag陶瓷接合体及其制造方法 |
CN112164971B (zh) * | 2020-09-29 | 2022-03-08 | 吉林大学 | 一种基于δ-MnO2纳米片的可饱和吸收体、制备方法及被动调Q光纤激光器方面的应用 |
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JP2004349701A (ja) | 2003-05-19 | 2004-12-09 | Boeing Co:The | ダイオードポンプ固体ディスクレーザおよび均一なレーザ利得を生成する方法 |
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JP2011146556A (ja) | 2010-01-15 | 2011-07-28 | National Institutes Of Natural Sciences | 半導体レーザー励起固体レーザー装置 |
JP2012222072A (ja) | 2011-04-06 | 2012-11-12 | Hamamatsu Photonics Kk | レーザ増幅装置 |
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2019
- 2019-10-28 US US17/286,863 patent/US20210336408A1/en active Pending
- 2019-10-28 CN CN201980058336.4A patent/CN112654588A/zh active Pending
- 2019-10-28 JP JP2020565588A patent/JP7052088B2/ja active Active
- 2019-10-28 EP EP19908093.8A patent/EP3822233A4/en active Pending
- 2019-10-28 WO PCT/JP2019/042123 patent/WO2020144915A1/ja unknown
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US20020110164A1 (en) | 2001-02-13 | 2002-08-15 | Jan Vetrovec | High-average power active mirror solid-state laser with multiple subapertures |
JP2004349701A (ja) | 2003-05-19 | 2004-12-09 | Boeing Co:The | ダイオードポンプ固体ディスクレーザおよび均一なレーザ利得を生成する方法 |
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JP2011146556A (ja) | 2010-01-15 | 2011-07-28 | National Institutes Of Natural Sciences | 半導体レーザー励起固体レーザー装置 |
JP2012222072A (ja) | 2011-04-06 | 2012-11-12 | Hamamatsu Photonics Kk | レーザ増幅装置 |
JP2014519721A (ja) | 2011-06-13 | 2014-08-14 | ローレンス リバモア ナショナル セキュリティー, エルエルシー | 極低温冷却レーザー増幅器のための方法及びシステム |
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JPWO2020144915A1 (ja) | 2021-09-09 |
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EP3822233A1 (en) | 2021-05-19 |
CN112654588A (zh) | 2021-04-13 |
US20210336408A1 (en) | 2021-10-28 |
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