JP7044627B2 - Film forming equipment - Google Patents

Description

The present invention relates to a film forming apparatus, and particularly to a technique suitable for use when rotating a substrate for vapor deposition.

In the field of image medicine, the development of a digital radiographic image detection device is underway. In this type of radiographic image detection device, a scintillator panel that converts radiation into visible light is used. The scintillator panel has a scintillator layer made of an X-ray phosphor having the property of emitting light by radiation.

In recent years, in order to improve the SN ratio in low-dose imaging, a scintillator panel with high luminous efficiency has been demanded. Generally, the luminous efficiency of the scintillator panel is determined by the thickness of the scintillator layer, the X-ray absorption coefficient of the phosphor, and the like. For example, the thicker the scintillator layer, the higher the sensitivity and therefore the higher the luminous efficiency. However, the thicker the scintillator layer, the more the emitted light is scattered in the scintillator, so that the sharpness (resolution) is lowered.

On the other hand, cesium iodide (CsI) is known as one of the scintillator materials. Cesium iodide has the advantage of having a relatively high conversion efficiency from X-rays to visible light. The columnar crystals of cesium iodide have a light guide effect and suppress the scattering of emitted light in the crystals. Therefore, it is possible to thicken the scintillator layer without deteriorating the sharpness.

Columnar crystals of cesium iodide can be formed by vacuum deposition. For example, Patent Document 1 describes a method of depositing a fluorescent film on a substrate by arranging and evaporating a plurality of vapor deposition sources 8a and 8b in a high vacuum.

International Publication No. 2010/150576

In the vacuum vapor deposition method, the efficiency of using the vapor deposition material is relatively low, so that a large amount of vapor deposition material is required to form a vapor deposition film having a thickness of about 300 to 1000 μm.
However, in the technique described in Patent Document 1, since the vapor deposition source is arranged at a position eccentric with respect to the rotation axis of the substrate, all the vapor deposition substances generated from the vapor deposition source cannot be used for film formation. For this reason, since a large amount of thin-film deposition material is required to form a film by thin-film deposition of the fluorescent film, there is a problem that a large amount of wasted vapor-film deposition material is generated.

Moreover, in the technique described in Patent Document 1, deposits deposited on a portion other than the substrate cause deterioration of vapor deposition characteristics such as particles, and there has been a demand to reduce this.

Further, in the thin-film deposition of the scintillator layer, which is often formed on a rectangular substrate, the amount of thin-film deposition material adhering to other than the substrate increases during the vapor deposition by rotating the substrate, which is reduced. There was a request to do it.

Further, there is a demand for uniform crystallinity of the scintillator layer in the substrate surface.

The present invention has been made in view of the above circumstances, and is intended to achieve the following object.
1. 1. To improve the efficiency of film formation in thin film deposition.
2. 2. To reduce wasteful materials that adhere to other than the substrate.
3. 3. To improve the crystal uniformity of the scintillator layer in the substrate surface.
4. To reduce the size of the film forming equipment by reducing the volume of the film forming chamber.

The film forming apparatus of the present invention is a film forming apparatus that deposits a substrate having a rectangular contour while intersecting with the main surface of the substrate and rotating around a rotation axis passing through the center of the substrate.
A chamber that can be evacuated and
The vapor deposition source provided under the chamber and
A plurality of substrate rotation holding mechanisms capable of rotating and holding the substrate around the axis on the upper side of the chamber,
Have,
In the two substrates in which the plurality of substrate rotation holding mechanisms are in close contact with each other, the corners of the contour of the other substrate face each other on the contour side of the contour of one substrate on the line connecting the rotation centers of the substrates. It is possible to rotate while maintaining the phase difference that makes it in a state of
A plurality of the vapor deposition sources are arranged in a direction connecting the rotation centers of the two substrates which are the closest positions, and the horizontal center positions of the plurality of vapor deposition sources have the largest evaporation amount of the vapor deposition material. The above problem was solved by setting the center of rotation as the center of vapor deposition and arranging the center of rotation symmetrically with respect to the center of vapor deposition .
In the present invention, it is more preferable that the plurality of substrate rotation holding mechanisms are set in opposite directions on the two substrates that are in close contact with each other.
The film forming apparatus of the present invention has dimensions such that the distance between the rotation centers of the two substrates in which the plurality of substrate rotation holding mechanisms are closest to each other is half the contour side of the substrate contour. It is set to be larger than the sum of the half of the diagonal line connecting the corners of the contour of the board contour and smaller than the diagonal dimension connecting the corners of the contour of the board contour. It is possible.
In the present invention, the plurality of substrate rotation holding mechanisms can be provided as symmetrical positions in the horizontal direction from the position directly above the vapor deposition source.
Further, in the present invention, the means for arranging the plurality of the substrate rotation holding mechanisms so that the rotation axes are parallel to each other on the two boards which are in close contact with each other, or the substrate rotation holding mechanism. It is also possible to adopt a means in which the rotation axes are located in the same vertical plane and are arranged so as to be inclined at the same angle with respect to the vertical direction in the two boards that are in close contact with each other. can.
In the present invention, the plurality of substrate rotation holding mechanisms are located in the same vertical plane and the same in the vertical direction in the two substrates whose closest positions are in one direction. It is arranged so that it is tilted at an angle, and it is also tilted.
The two substrates that are closest to each other in the other direction orthogonal to the one direction can be arranged so that the rotation axes are in a parallel state.
Further, it is possible to have the substrate rotation holding mechanism for processing the four substrates.
Further, it is preferable that the plurality of the vapor deposition sources are arranged symmetrically in the horizontal direction with respect to the vapor deposition center and are arranged closer to the vapor deposition center than the rotation center .
Further, it is a film forming apparatus in which at least two rectangular contour substrates are arranged on the same surface, and vapor deposition is performed while rotating around a rotation axis that intersects the substrate main surface and passes through the center of the substrate.
A chamber that can be evacuated and
The vapor deposition source provided under the chamber and
A plurality of substrate rotation holding mechanisms capable of rotating and holding the substrate around the axis on the upper side of the chamber,
Have,
A plurality of the substrate rotation holding mechanisms are set in opposite directions in the two adjacent substrates arranged on the same surface.
The distance between the rotation centers of two adjacent boards arranged on the same surface is half the dimension of the contour side of the board contour and half of the diagonal line connecting the corners of the contour side of the board contour. It is set to be larger than the sum of the dimensions and smaller than the diagonal dimension connecting the corners of the contour sides of the substrate contour .
A plurality of the vapor deposition sources are arranged in a direction connecting the rotation centers of the two substrates which are the closest positions, and the horizontal center positions of the plurality of vapor deposition sources have the largest evaporation amount of the vapor deposition material. The above problem was solved by setting the center of rotation as the center of vapor deposition and arranging the center of rotation symmetrically with respect to the center of vapor deposition .

The film forming apparatus of the present invention is a film forming apparatus that deposits a substrate having a rectangular contour while intersecting with the main surface of the substrate and rotating around a rotation axis passing through the center of the substrate.
A chamber that can be evacuated and
The vapor deposition source provided under the chamber and
A plurality of substrate rotation holding mechanisms capable of rotating and holding the substrate around the axis on the upper side of the chamber,
Have,
In two of the two substrates in which the plurality of substrate rotation holding mechanisms are in close contact with each other, the corners of the contour of the other substrate face each other on the contour side of the contour of one substrate on the line connecting the rotation centers of the substrates. By making it rotatable while maintaining the phase difference in the state, the separation distance between the two boards that are in the closest position is shorter than in the case where the corners of the board contour rotate in the same phase. This makes it possible to reduce the amount of vapor-filmed material adhering to other than the substrate. At the same time, it is possible to make the vapor deposition film formation state of the two substrates in the closest position almost equal to each other, so that the film formation characteristics can be made uniform on a plurality of substrates and the film deposition characteristics can be made uniform in the substrate surface. The film formation characteristics can be made uniform. This makes it possible to improve the crystal uniformity of the scintillator layer in the surface of the substrate when the scintillation layer is deposited on the substrate.

In the present invention, the plurality of substrate rotation holding mechanisms are set in opposite directions in the two substrates in the closest position, so that the substrates in the closest positions do not come into contact with each other in phase. It becomes possible to rotate while maintaining the above position, and it is possible to shorten the separation distance between the two substrates that are in close contact with each other.

The film forming apparatus of the present invention has a dimension in which the distance between the rotation centers of the two substrates in which the plurality of substrate rotation holding mechanisms are closest to each other is half the contour side of the substrate contour. It is set to be larger than the sum of the half of the diagonal line connecting the corners of the contour of the board contour and smaller than the diagonal dimension connecting the corners of the contour of the board contour. As a result, the substrates at the closest positions can be rotated while maintaining the phase without contacting each other, and it is possible to reduce the amount of thin-film deposition material adhering to other than the substrate.

In the present invention, the plurality of substrate rotation holding mechanisms are provided as symmetrical positions in the horizontal direction from the position directly above the vapor deposition source, so that the plurality of substrates held by the plurality of substrate rotation holding mechanisms are respectively. Since it is possible to carry out vapor deposition with substantially the same vapor deposition state, it is possible to make the film formation characteristics uniform on a plurality of substrates and also to make the film formation characteristics in the substrate surface uniform.

Further, in the present invention, the plurality of substrate rotation holding mechanisms rotate in the same plane by arranging the rotation axes in parallel on the two substrates which are in close contact with each other. However, since it is possible to make the vapor deposition film formation state substantially equal on a plurality of substrates to be vapor-deposited, the film formation characteristics can be made uniform on the plurality of substrates and the film formation characteristics on the substrate surface can be improved. Can be homogenized.

Further, in the present invention, the plurality of the substrate rotation holding mechanisms are positioned in the same vertical plane and tilted at the same angle with respect to the vertical direction in the two substrates which are in close contact with each other. By adopting means arranged so as to be in a state, it is possible to perform inclined vapor deposition at the same angle, minimize the distance between the substrates, and rotate the substrates in the closest positions while maintaining the phase without contacting each other. This makes it possible to reduce the amount of thin-film deposition material adhering to other than the substrate and to make the vapor-film deposition state almost equal, so that the film-forming characteristics can be made uniform on multiple substrates and the in-plane of the substrate can be made uniform. The film formation characteristics in the above can be made uniform.

In the present invention, the plurality of substrate rotation holding mechanisms are located in the same vertical plane on the two substrates whose closest positions are in one direction, and the same in the vertical direction. It is arranged so that it is tilted at an angle, and it is also tilted.
By arranging the two boards that are closest to each other in the other direction orthogonal to the one direction so that the rotation axes are in a parallel state, the boards are subjected to inclined vapor deposition at the same angle. By minimizing the distance, the substrates in the closest positions can be rotated while maintaining their phases without touching each other, reducing the amount of thin-film deposition material adhering to other than the substrate, and making the vapor-film deposition states almost equal. Therefore, it is possible to make the film formation characteristics uniform on a plurality of substrates, and also to make the film formation characteristics in the substrate surface uniform, and further, as a uniform film formation characteristic, four or more substrates can be simultaneously used. It becomes possible to process.

Further, by having the substrate rotation holding mechanism for processing the four substrates, the distance between the substrates is minimized, the vapor deposition material adhering to other than the substrate is reduced, and the film forming characteristics in the substrate surface are made uniform. be able to.

Further, by arranging a plurality of the vapor deposition sources in the direction connecting the rotation centers of the two substrates in the closest position, the vapor deposition characteristics of the two substrates in the closest positions are made uniform. It is possible to make the film formation characteristics in the in-plane direction of the substrate uniform.

Further, it is a film forming apparatus in which at least two rectangular contour substrates are arranged on the same surface, and vapor deposition is performed while rotating around a rotation axis that intersects the substrate main surface and passes through the center of the substrate.
A chamber that can be evacuated and
The vapor deposition source provided under the chamber and
A plurality of substrate rotation holding mechanisms capable of rotating and holding the substrate around the axis on the upper side of the chamber,
Have,
A plurality of the substrate rotation holding mechanisms are set in opposite directions in the two adjacent substrates arranged on the same surface.
The distance between the rotation centers of two adjacent substrates arranged on the same surface is half the dimension of the contour side of the substrate contour and half the diagonal line connecting the corners of the contour side of the substrate contour. By setting the dimension to be larger than the sum of the dimensions and smaller than the diagonal dimension connecting the corners of the contour edges of the substrate contour, the corners of the substrate contour are in phase with each other. Compared with the case of rotation, it is possible to shorten the separation distance between the two substrates that are in close contact with each other, and thereby it is possible to reduce the amount of thin-film deposition material adhering to other than the substrate. At the same time, it is possible to make the vapor deposition film formation state of the two substrates in the closest position almost equal to each other, so that the film formation characteristics can be made uniform on a plurality of substrates and the film deposition characteristics can be made uniform in the substrate surface. The film formation characteristics can be made uniform. This makes it possible to improve the crystal uniformity of the scintillator layer in the surface of the substrate when the scintillation layer is deposited on the substrate.

According to the present invention, it is possible to minimize the distance between the substrates, reduce the vapor deposition material adhering to other than the substrate, improve the material adhesion efficiency in the vapor deposition, make the film formation characteristics in the substrate surface uniform, and make the substrate. It is possible to make the film formation characteristics in the in-plane direction uniform, and it is possible to achieve the effect of improving the crystal uniformity of the scintillator layer in the substrate surface.

It is a schematic front view which shows the 1st Embodiment of the film forming apparatus which concerns on this invention. It is a schematic plan view which shows the substrate positional relationship in the substrate rotation holding mechanism of 1st Embodiment of the film formation apparatus which concerns on this invention. It is a schematic plan view which shows the substrate rotation state in the substrate rotation holding mechanism of 1st Embodiment of the film formation apparatus which concerns on this invention. It is a schematic plan view which shows the substrate rotation state in the substrate rotation holding mechanism of 1st Embodiment of the film formation apparatus which concerns on this invention. It is a schematic perspective view which shows the 1st Embodiment of the film forming apparatus which concerns on this invention. It is a schematic plan view which shows the substrate positional relationship in the substrate rotation holding mechanism of the 2nd Embodiment of the film formation apparatus which concerns on this invention. It is a schematic plan view which shows the substrate rotation state in the substrate rotation holding mechanism of the 2nd Embodiment of the film formation apparatus which concerns on this invention. It is a schematic plan view which shows the substrate rotation state in the substrate rotation holding mechanism of the 2nd Embodiment of the film formation apparatus which concerns on this invention. It is a schematic front view which shows the 3rd Embodiment of the film forming apparatus which concerns on this invention. It is a schematic perspective view which shows the 4th Embodiment of the film forming apparatus which concerns on this invention.

Hereinafter, the first embodiment of the film forming apparatus according to the present invention will be described with reference to the drawings.
FIG. 1 is a front view showing a film forming apparatus according to the present embodiment, and in the figure, reference numeral 10 is a film forming apparatus.

The film forming apparatus 10 according to the present embodiment is an apparatus for forming a scintillator layer by vapor deposition, and as shown in FIG. 1, a vacuum chamber (chamber) 11, a vapor deposition source 12, and substrate rotation holding mechanisms 13, 14 And have.

As shown in FIG. 1, the film forming apparatus 10 has a vacuum chamber 11 serving as a vapor deposition chamber, and the vacuum chamber 11 is connected to a vacuum pump 11b via a valve 11a so that vacuum exhaust is possible.
A gas introduction pipe 11c for introducing a process gas is installed in the vacuum chamber 11, and a gas supply unit 11d is connected to the vacuum chamber 11. The process gas includes an inert gas such as argon and a reactive gas such as oxygen and nitrogen.

Below the vacuum chamber 11, a thin-film deposition source 12 is installed, as shown in FIG. The vapor deposition source 12 is supposed to heat and evaporate the vapor deposition material for film formation, and has, for example, a plurality of boats 12a, 12b, 12c, which are three. The boats 12a, 12b, and 12c are supposed to accommodate the vapor deposition material and have the same configuration. For example, they have a cylindrical shape and a rectangular opening for steam emission is formed on the upper surface thereof.

In the film forming apparatus 10 of the present embodiment, as shown in FIG. 1, the horizontal center position of the plurality of boats 12a, 12b, 12c is set as the vapor deposition center 12C, and the plurality of these boats 12a, 12b, 12c are set. The boats 12a, 12b, 12c are arranged so as to be horizontally symmetrical with respect to the vapor deposition center 12C.

The vapor deposition center 12C is set as the point where the evaporation amount of the vapor deposition material is the largest. In the present embodiment, as shown in FIG. 1, the horizontal center of the boat 12b located at the center is set as the vapor deposition center 12C.
Further, in both the outer boats 12a and 12c, the rotation center 13e and the rotation shaft 14b in the substrate rotation holding mechanism 14 at which the rotation shaft 13b in the substrate rotation holding mechanism 13 described later intersects the vapor deposition surface of the substrate 13s It is arranged on the vapor deposition center 12C side in the horizontal plane with respect to the rotation center 14e, which is the intersection with the vapor deposition surface of the substrate 14s.

The same vapor deposition material is housed in each of the boats 12a, 12b, 12c, but different vapor deposition materials may be housed in each of the boats 12a, 12b, 12c depending on the application. Metals, alloys and other materials are used as the vapor deposition material. The vapor deposition material can be appropriately selected according to the type of the vapor deposition film, and in the case of producing a scintillator, for example, cesium iodide (CsI), sodium iodide, and cesium bromide are used.

On the other hand, as the constituent material of the boats 12a, 12b, 12c, a refractory material is typically used, and examples thereof include metals or alloys such as Ta, W, Nb, Zr, Ni, and Mo. Further, a compound of these metals and C, B, N or the like may be used.

The vapor deposition source 12 has, for example, a heating means composed of a resistance heating type vapor deposition source. As a result, the boats 12a, 12b, and 12c are heated by receiving electric power from a heating mechanism (not shown).

As shown in FIG. 1, above the vacuum chamber 11, substrate rotation holding mechanisms 13 and 14 that support and rotate the substrates 13s and 14s during vapor deposition are installed.
In the film forming apparatus 10 of the present embodiment, for example, a plurality of rectangular substrates 13s and 14s, which are two sheets, are simultaneously processed, and two sheets correspond to one substrate 13s and 14s, respectively. The substrate rotation holding mechanisms 13 and 14 are provided.

The substrate rotation holding mechanisms 13 and 14 have substantially the same configuration, respectively, and as shown in FIG. 1, stages 13a and 14a facing the lower vapor deposition source are installed.

The stages 13a and 14a are capable of holding the substrates 13s and 14s on the lower side thereof by a holding mechanism (not shown), and the substrates 13s and 14s are detachable, and the rotating shafts 13b and 14b are fixed on the upper side of the central portion thereof. ing.
The stages 13a and 14a have a rectangular contour corresponding to the rectangular substrates 13s and 14s having substantially the same shape. The stages 13a and 14a are preferably slightly smaller than the substrates 13s and 14s or have the same contour as the substrates 13s and 14s so as not to generate extra deposits during film formation.

The rotary shafts 13b and 14b penetrate the upper wall portion of the vacuum chamber 11 in an airtight and rotatably manner, and the upper end side thereof is connected to the drive unit 19. By transmitting to the stages 13a and 14a via the above, the stages 13a and 14a are configured to be rotatable around the rotation axis (rotation axis) 13b and 14b.
As a result, the substrate rotation holding mechanisms 13 and 14 can rotatably hold the substrates 13s and 14s, respectively.

The substrate rotation holding mechanisms 13 and 14 may be provided with substrate temperature adjusting means for setting the temperature of the substrates 13s and 14s at the time of film formation. As the substrate temperature adjusting means, a heater for heating the substrates 13s and 14s, a heat radiating plate for cooling the vapor-filmed material of the substrates 13s and 14s in film formation to dissipate heat during crystal growth, and a cooling means. Or, it can be a heat exchanger capable of performing any of these.

The rotation shafts 13b and 14b are parallel to each other and extend in the vertical direction, so that the stages 13a and 14a can rotate synchronously in the same horizontal plane, respectively.
Each of the rotating shafts 13b and 14b is connected to the driving unit 19 and can be rotated in the opposite direction by the driving unit 19.

The drive unit 19 is arranged outside the vacuum chamber 11 and can rotate the rotating shafts 13b and 14b to be connected in synchronization with a predetermined rotation direction at the same angular velocity while maintaining the phase difference described later, and is a drive motor. It is assumed that it has a driving means such as, a braking means such as a gearbox, a rotation control means capable of outputting a predetermined drive signal, and the like.

In the substrate rotation holding mechanisms 13 and 14, the connection positions of the rotation shafts 13b and 14b, which are the center positions of the stages 13a and 14a, are arranged symmetrically with respect to the vapor deposition center 12C in the horizontal direction.

Next, the substrate rotation state in the substrate rotation holding mechanisms 13 and 14 will be described.
FIG. 2 is a schematic plan view showing a substrate positional relationship in a state where the substrate rotation holding mechanism of the film forming apparatus in the present embodiment is viewed in a plan view.

As shown in FIG. 2, the substrate rotation holding mechanism 13 and the substrate rotation holding mechanism 14 in the present embodiment are symmetrical with respect to the vapor deposition center 12C, and the rotation center 13e of the substrate rotation holding mechanism 13 and the substrate rotation holding mechanism 14 are held. The midpoint of the straight line connecting the rotation center 14e of the mechanism 14 is set to coincide with the vapor deposition center 12C.

The rotation center 13e of the substrate rotation holding mechanism 13 is at a position where the lower end of the rotation shaft 13b is connected to the stage 13a, and the rotation center 14e of the substrate rotation holding mechanism 14 is connected to the stage 14a by the lower end of the rotation shaft 14b. It matches the position where it was made.
Further, the vapor deposition center 12C shown in FIG. 2 indicates a point where a vertical line extending upward from the center position of the vapor deposition source 12 located below the vacuum chamber 11 and a horizontal plane including the substrates 13s and 14s intersect. There is.

In the board rotation holding mechanisms 13 and 14, the distance L1 between the rotation center 13e of the board rotation holding mechanism 13 and the rotation center 14e of the board rotation holding mechanism 14 is half the length L2 of one side of the rectangular boards 13s and 14s. , These relationships are related to L3, which is half the diagonal length of the rectangular substrates 13s and 14s.
L1> L2 + L3 ……… (Equation 1)
L3> (L1) / 2 ……… (Equation 2)
2 × L3 ＞ L1 ……… (Equation 3)
It is set to meet.

That is, the stages 13a and the stage 14a have an interval L1 larger than half of the sum of the length of one side of the substrates 13s and 14s and the diagonal lengths of the substrates 13s and 14s, and are larger than the diagonal lengths of the substrates 13s and 14s. Is also arranged to have a small spacing L1.

Further, in the substrate rotation holding mechanisms 13 and 14, the rotation direction of the stage 13a of the substrate rotation holding mechanism 13 and the rotation direction of the stage 14a of the substrate rotation holding mechanism 14 are opposite to each other, and their rotation speeds are equal. It is set to be.

In the substrate rotation holding mechanisms 13 and 14 in the present embodiment, the substrate rotation at the time of film formation is performed as follows.
3 and 4 are schematic plan views showing a substrate rotation state in a plan view of the substrate rotation holding mechanism of the film forming apparatus according to the present embodiment.

First, as an initial state, as shown in FIG. 2, in one of the board rotation holding mechanisms 13, the midpoint of one side 13d of the board 13s is the rotation center 13e of the board rotation holding mechanism 13 and the rotation center of the board rotation holding mechanism 14. The rotation position is located on the line connecting 14e. At the same time, in the other substrate rotation holding mechanism 14, the corner apex 14c of the substrate 14s is set to a rotation position located on a line connecting the rotation center 13e of the substrate rotation holding mechanism 13 and the rotation center 14e of the substrate rotation holding mechanism 14. ..

At this time, the vapor deposition center 12C, which is the midpoint between the rotation center 13e of the substrate rotation holding mechanism 13 and the rotation center 14e of the substrate rotation holding mechanism 14, is the rotation center of the substrate rotation holding mechanism 14 rather than the corner apex 14c of the substrate 14s. It is located on the 14e side. That is, the vapor deposition center 12C is located within the contour of the substrate 14s rather than the corner apex 14c of the substrate 14s.

Next, in the adjacent substrate rotation holding mechanism 13 and the substrate rotation holding mechanism 14 having such relative positions, the substrate rotation holding mechanism 13 located on the left side in FIG. 2 is rotated counterclockwise and on the right side in FIG. The substrate rotation holding mechanism 14 located is rotated clockwise in synchronization with the same rotation speed.

Then, as shown in FIG. 3, one side 13d of the substrate 13s in the substrate rotation holding mechanism 13 and one side 14d of the substrate 14s in the substrate rotation holding mechanism 14 are in a parallel state. In this rotational position relationship, the vapor deposition center 12C is located outside the side 13d of the substrate 13s and the side 14d of the substrate 14s, that is, the vapor deposition center 12C is located outside the contour of the substrate 13s and the substrate 14s. It will be.

After that, when both the substrates 13s and 14s are further rotated, as shown in FIG. 4, in one of the substrate rotation holding mechanisms 13, the corner apex 13c of the substrate 13s is the rotation center 13e of the substrate rotation holding mechanism 13 and the substrate rotation holding. The rotation position is located on the line connecting the rotation center 14e of the mechanism 14. At the same time, in the other substrate rotation holding mechanism 14, the midpoint of one side 14d of the substrate 14s is a rotation position located on a line connecting the rotation center 13e of the substrate rotation holding mechanism 13 and the rotation center 14e of the substrate rotation holding mechanism 14. Become.

When it is further rotated, it returns to the rotation position relationship shown in FIG. 2 through a state in which the rotation position relationship shown in FIG. 3 is inverted left and right.

In this embodiment, in the substrate rotation holding mechanisms 13 and 14, the other substrate 14s is centered on the side 13d of the contour of one substrate 13s on the line connecting the rotation centers 13e and 14e of the substrates 13s and 14s. While maintaining the phase difference in which the corner vertices 14c of the contour are in opposite positions, they are rotated in opposite directions in synchronization with each other.

As a result, the center of the side 13d, which is the contour of the substrate 13s closest to the center of rotation 13e, and the corner apex 14c, which is the contour of the substrate 14s farthest from the center of rotation 14e, face each other, that is, the contour of the substrate 13s and the contour of the substrate 14s. It is possible to set the distance between the rotation center 13e and the rotation center 14e so that the two substrates 13s and the substrates 14s do not come into contact with each other in the state where they are closest to each other. As a result, even if the substrates 13s and 14s are rotated, the substrates 13s and the substrates 14s do not come into contact with each other.

At the same time, the distance between the rotation center 13e and the rotation center 14e is set as short as possible as compared with the case where the substrate 13s and the substrate 14s are rotated in the same direction. It is possible to reduce the area where film formation is unnecessarily performed.

Further, even in a region where film formation is unnecessarily formed between the substrate 13s and the substrate 14s, most of the corner vertices 13c of the contour of the substrate 13s and the corner vertices 14c of the contour of the substrate 14s alternate. Of the vapor-filmed material that passes through, reduces the area where unnecessary film formation occurs during the entire film-forming time, reduces the amount of deposits, and evaporates, that is, the amount used for film-forming the substrate. , It is possible to improve the film formation efficiency of the vapor-filmed material, and it is possible to reduce the total amount of the vapor-filmed material to be prepared.

The film forming apparatus 10 of the present embodiment is configured as described above.
Next, a method of depositing a cesium iodide film on glass rectangular substrates 13s and 14s by using cesium iodide as a vapor deposition material in the film forming apparatus 10 will be described.

A thin-film deposition source 12 containing a thin-film deposition material is arranged inside the vacuum chamber 11. After that, the vacuum pump 11b is driven, the vacuum chamber (deposit chamber V) 11 is evacuated to 1 × 10 ^-3 Pa or less, and then a gas such as Ar is introduced to adjust the value to about 1 to 0.05 Pa.

In the substrate rotation holding mechanisms 13 and 14, the substrates 13s and 14s are supported on the lower surfaces of the stages 13a and 14a, and the intermediate position between the substrates 13s and the substrate 14s faces the vapor deposition source 12. The stages 13a and 14a heat the substrates 13s and 14s to a predetermined temperature by a built-in heater, and are driven by the drive unit 19 to form a film in the above-mentioned predetermined synchronized rotational state around the rotating shafts 13b and 14b. It can be rotated at a suitable rotation speed. The predetermined temperature is not particularly limited, and is, for example, about 100 to 300 ° C.

The vaporized material contained in the boats 12a, 12b, 12c of the vapor deposition source 12 is heated to a predetermined evaporation temperature which is equal to or higher than the melting point of the vapor deposition material. For example, when the vaporized material is cesium iodide, the evaporation temperature is set to 600 to 750 ° C. Evaporated particles of the vapor-deposited material are deposited on the surfaces of the substrates 13s and 14s held on the opposing stages 13a and 14a. As a result, a cesium iodide film is formed on the surfaces of the substrates 13s and 14s.

For example, the scintillator layer constituting the scintillator panel is formed with a thickness of 300 to 1000 μm. Even when it is difficult to form such a thick thin-film deposition film with high film formation efficiency, in the present embodiment, the plurality of substrates 13s and 14s are formed on the contour side 13d center and the contour angle portion apex as described above. By a method of forming a film by rotating them in opposite directions in synchronization with each other so as to maintain the phase difference from the state where the 14c faces each other, a thick thin-film film can be continuously formed.

At the same time, the scintillator layer can be uniformly deposited on the surfaces of the substrates 13s and 14s, and the crystallinity of the scintillator layer can be made more uniform to reduce the sensitivity unevenness.

FIG. 5 is a perspective view showing the film forming apparatus according to the present embodiment.
In the film forming apparatus 10 of the present embodiment, as shown in FIG. 5, the side wall portion 11g of the vacuum chamber 11 is loaded in and out of the substrates 13s and 14s, such as loading and unloading the vapor deposition source 12 and replenishing the vapor deposition material, and the vacuum chamber 11 An opening / closing door 11f can be provided to clean the inside.

In the figure, the opening / closing door 11f is provided on the entire side wall portion 11g which is one side surface of the vacuum chamber 11, but may be formed on a part of the side wall portion 11g. Further, it is preferable that the opening / closing door 11f is provided on the side wall portion 11g having a large width dimension. Further, it can be provided on each of the two or three sides of the vacuum chamber 11.
The opening / closing door 11f can be closed by keeping the vacuum chamber 11 in a closed state, and can communicate the inside and the outside of the vacuum chamber 11 in the open state.

The opening / closing door 11f may be provided on the ceiling portion 11h of the vacuum chamber 11 and may be configured to move up and down together with the substrate rotation holding mechanisms 13 and 14 to carry in / out the substrates 13s and 14s, clean the inside of the vacuum chamber 11 and the like. .. In this case, another opening / closing door may be provided at a lower position of the vacuum chamber 11 for taking in / out the vapor deposition source 12 and replenishing the vapor deposition material, or only the vapor deposition source 12 may be configured to be movable to the outside.

Hereinafter, a second embodiment of the film forming apparatus according to the present invention will be described with reference to the drawings.
FIG. 6 is a schematic plan view showing the substrate positional relationship in a state where the substrate rotation holding mechanism of the film forming apparatus in the present embodiment is viewed in a plan view, and corresponds to FIG. 2 in the first embodiment.
In the present embodiment, the difference from the above-mentioned first embodiment is in the number of provided substrate rotation holding mechanisms, and the same reference numerals are given to the configurations corresponding to the other above-mentioned first embodiments. And the explanation is omitted.

In the film forming apparatus 10 of the present embodiment, as shown in FIG. 6, in addition to the substrate rotation holding mechanisms 13 and 14 of the first embodiment, the substrate rotation holding mechanisms 15 and 16 are provided, and at the same time, they have substantially the same shape. It is possible to process the substrates 13s to 16s.

The substrate rotation holding mechanisms 15 and 16 have substantially the same configuration as the substrate rotation holding mechanisms 13 and 14, respectively, and as shown in FIG. 6, these four substrate rotation holding mechanisms 13 to 16 are located at the vapor deposition center 12C. On the other hand, the stages 13a, 14a, 15a, 16a are installed so as to be symmetrical in the horizontal direction.

That is, the rotation center 13e of the substrate rotation holding mechanism 13, the rotation center 14e of the substrate rotation holding mechanism 14, the rotation center 16e of the substrate rotation holding mechanism 16, and the rotation center 15e of the substrate rotation holding mechanism 15 are the substrates 13s. In a horizontal plane having the same rotating height for 16 s, they are arranged so as to be positioned clockwise as the vertices (corners) of a rectangle centered on the vapor deposition center 12C. Since these substrate rotation holding mechanisms 13 to 16 have substantially the same configuration, the order of the added reference numerals has no meaning other than specifying the positional relationship.

The rotating shafts 13b, 14b, 15b, 16b are parallel to each other and extend in the vertical direction, so that the stages 13a, 14a, 15a, 16a can rotate in a horizontal plane at the same height, respectively. Has been done.

In the substrate rotation holding mechanisms 13 and 14, as shown in FIG. 6, the distance L1 between the rotation center 13e of the substrate rotation holding mechanism 13 and the rotation center 14e of the substrate rotation holding mechanism 14 is one side of the rectangular substrates 13s and 14s. The relationship between L2, which is half the length of L2, and L3, which is half the diagonal length of the rectangular substrates 13s and 14s, is
L1> L2 + L3 ……… (Equation 1)
L3> (L1) / 2 ……… (Equation 2)
2 × L3 ＞ L1 ……… (Equation 3)
It is set to meet.

In the substrate rotation holding mechanisms 13 and 15, as shown in FIG. 6, the distance L1 between the rotation center 13e of the substrate rotation holding mechanism 13 and the rotation center 15e of the substrate rotation holding mechanism 15 is one side of the rectangular substrates 13s and 15s. These relationships are related to half the length L2 of the rectangular substrate and half the diagonal length L3 of the rectangular substrates 13s and 15s.
L1> L2 + L3 ……… (Equation 1)
L3> (L1) / 2 ……… (Equation 2)
2 × L3 ＞ L1 ……… (Equation 3)
It is set to meet.

In the substrate rotation holding mechanisms 15 and 16, as shown in FIG. 6, the distance L1 between the rotation center 15e of the substrate rotation holding mechanism 15 and the rotation center 16e of the substrate rotation holding mechanism 16 is one side of the rectangular substrates 15s and 16s. These relationships are related to half the length L2 of the rectangular substrate and half the diagonal length L3 of the rectangular substrates 15s and 16s.
L1> L2 + L3 ……… (Equation 1)
L3> (L1) / 2 ……… (Equation 2)
2 × L3 ＞ L1 ……… (Equation 3)
It is set to meet.

In the substrate rotation holding mechanisms 14 and 16, as shown in FIG. 6, the distance L1 between the rotation center 14e of the substrate rotation holding mechanism 14 and the rotation center 16e of the substrate rotation holding mechanism 16 is one side of the rectangular substrates 14s and 16s. The relationship between L2, which is half the length of L2, and L3, which is half the diagonal length of the rectangular substrates 14s and 16s, is
L1> L2 + L3 ……… (Equation 1)
L3> (L1) / 2 ……… (Equation 2)
2 × L3 ＞ L1 ……… (Equation 3)
It is set to meet.

Further, the board rotation holding mechanism 13 and the board rotation holding mechanism 14, the board rotation holding mechanism 14 and the board rotation holding mechanism 16, the board rotation holding mechanism 16 and the board rotation holding mechanism 15, the board rotation holding mechanism 15 and the board rotation holding mechanism 13 , Each is arranged so as to be in the closest position equally. That is, the rotation center 13e and the rotation center 14e, the rotation center 14e and the rotation center 16e, the rotation center 16e and the rotation center 15e, and the rotation center 15e and the rotation center 13e are all arranged as the same distance L1. Further, the distance between the rotation center 13e and the rotation center 16e, and the rotation center 14e and the rotation center 15e is about twice the square root of the length L1, so that it is not the closest distance.

In the board rotation holding mechanisms 13 to 16, as shown in FIG. 6, the rotation direction of the stage 13a of the board rotation holding mechanism 13 and the stage 16a of the board rotation holding mechanism 16, and the stage 14a of the board rotation holding mechanism 14 and the board rotation holding The rotation direction of the stage 15a of the mechanism 15 is set to be opposite to the rotation direction, and the rotation speeds thereof are set to be equal to each other.

Further, in the substrate rotation holding mechanisms 13 to 16 having such relative positions, the rotation directions are set so that the adjacent substrate rotation holding mechanisms 13 to 16 rotate in opposite directions in synchronization with each other as the closest distance. There is. Specifically, the board rotation holding mechanism 13 and the board rotation holding mechanism 14, the board rotation holding mechanism 14 and the board rotation holding mechanism 16, the board rotation holding mechanism 16 and the board rotation holding mechanism 15, the board rotation holding mechanism 15 and the board rotation holding mechanism. The mechanisms 13 are set to rotate in opposite directions to each other and have the same rotation speed.

In the substrate rotation holding mechanisms 13 to 16 in the present embodiment, the substrate rotation at the time of film formation is performed as follows.
7 and 8 are schematic plan views showing a substrate rotation state in a plan view of the substrate rotation holding mechanism of the film forming apparatus according to the present embodiment.

First, as an initial state, corresponding to the first embodiment shown in FIG. 2, as shown in FIG. 6, in the substrate rotation holding mechanism 13 on the upper left in the figure, the corner apex 13c at the rightward position of the substrate 13s is set. The rotation position is located on the line connecting the rotation center 13e of the substrate rotation holding mechanism 13 and the rotation center 14e of the substrate rotation holding mechanism 14. Further, in the substrate rotation holding mechanism 13, the rotation position where the downward corner apex 13c of the substrate 13s is located on the line connecting the rotation center 13e of the substrate rotation holding mechanism 13 and the rotation center 15e of the substrate rotation holding mechanism 15. And.

At the same time, in the substrate rotation holding mechanism 14 on the upper right in the figure, the midpoint of one side 14d at the leftward position of the substrate 14s is on the line connecting the rotation center 13e of the substrate rotation holding mechanism 13 and the rotation center 14e of the substrate rotation holding mechanism 14. It is the rotational position where it is located. Further, in the substrate rotation holding mechanism 14, the midpoint of one side 14d of the downward position of the substrate 14s is located on the line connecting the rotation center 13e of the substrate rotation holding mechanism 13 and the rotation center 16e of the substrate rotation holding mechanism 16. The position.

At the same time, in the substrate rotation holding mechanism 15 at the lower left in the figure, the midpoint of one side 14d of the upward position of the substrate 15s is on the line connecting the rotation center 15e of the substrate rotation holding mechanism 15 and the rotation center 13e of the substrate rotation holding mechanism 13. It is the rotational position where it is located. Further, in the substrate rotation holding mechanism 15, the midpoint of the right-facing side 15d of the substrate 15s is located on the line connecting the rotation center 15e of the substrate rotation holding mechanism 15 and the rotation center 16e of the substrate rotation holding mechanism 16. The position.

Further, in the substrate rotation holding mechanism 16 at the lower right in the figure, the corner apex 16c at the leftward position of the substrate 16s is on the line connecting the rotation center 16e of the substrate rotation holding mechanism 16 and the rotation center 15e of the substrate rotation holding mechanism 15. It is the rotational position where it is located. Further, in the substrate rotation holding mechanism 16, the rotation position where the corner apex 16c at the upward position of the substrate 16s is located on the line connecting the rotation center 16e of the substrate rotation holding mechanism 16 and the rotation center 14e of the substrate rotation holding mechanism 14. And.

At this time, the vapor deposition center 12C, which is the midpoint of the rotation centers 13e to 1e of the substrate rotation holding mechanisms 13 to 16, is not located within the contours of any of the substrates 13s to 16s in a plan view.

Next, in the substrate rotation holding mechanisms 13 to 16 having such relative positions, the adjacent substrate rotation holding mechanisms 13 to 16 are rotated in synchronization with each other so as to rotate in opposite directions. Specifically, the board rotation holding mechanism 13 and the board rotation holding mechanism 14, the board rotation holding mechanism 14 and the board rotation holding mechanism 16, the board rotation holding mechanism 16 and the board rotation holding mechanism 15, the board rotation holding mechanism 15 and the board rotation holding mechanism. The mechanisms 13 are rotated in opposite directions to each other, and the substrate rotation holding mechanism 13 located at the upper left and the substrate rotation holding mechanism 16 located at the lower right in FIG. 6 rotate counterclockwise, and the substrate located at the upper right in FIG. The rotation holding mechanism 14 and the substrate rotation holding mechanism 15 located at the lower left are rotated clockwise and rotated so as to have the same rotation speed.

Then, as shown in FIG. 7, one side 13d of the substrate 13s in the substrate rotation holding mechanism 13 and one side 14d of the substrate 14s in the substrate rotation holding mechanism 14 are in a parallel state. At the same time, one side 13d of the substrate 13s in the substrate rotation holding mechanism 13 and one side 15d of the substrate 15s in the substrate rotation holding mechanism 15 are in a parallel state. At the same time, one side 15d of the substrate 15s in the substrate rotation holding mechanism 15 and one side 16d of the substrate 16s in the substrate rotation holding mechanism 16 are in a parallel state. At the same time, one side 16d of the substrate 16s in the substrate rotation holding mechanism 16 and one side 13d of the substrate 13s in the substrate rotation holding mechanism 13 are in a parallel rotational positional relationship.

After that, when the substrates 13s to 16s are further rotated, as shown in FIG. 8, in the substrate rotation holding mechanism 13 on the upper left in the figure, the midpoint of one side 13d of the rightward position of the substrate 13s is the rotation center of the substrate rotation holding mechanism 13. The rotation position is located on the line connecting 13e and the rotation center 14e of the substrate rotation holding mechanism 14. Further, in the substrate rotation holding mechanism 13, the midpoint of one side 13d of the downward position of the substrate 13s is located on the line connecting the rotation center 13e of the substrate rotation holding mechanism 13 and the rotation center 15e of the substrate rotation holding mechanism 15. It becomes a position.

At the same time, in the substrate rotation holding mechanism 14 on the upper right in the figure, the corner apex 14c at the leftward position of the substrate 14s is located on the line connecting the rotation center 13e of the substrate rotation holding mechanism 13 and the rotation center 14e of the substrate rotation holding mechanism 14. It becomes the rotation position to be performed. Further, in the substrate rotation holding mechanism 14, the downward corner apex 14c of the substrate 14s is located on the line connecting the rotation center 13e of the substrate rotation holding mechanism 13 and the rotation center 16e of the substrate rotation holding mechanism 16. It becomes.

At the same time, in the substrate rotation holding mechanism 15 at the lower left in the figure, the corner apex 15c at the upward position of the substrate 15s is located on the line connecting the rotation center 15e of the substrate rotation holding mechanism 15 and the rotation center 13e of the substrate rotation holding mechanism 13. It becomes the rotation position to be performed. Further, in the substrate rotation holding mechanism 15, the rotation position where the corner apex 15c at the rightward position of the substrate 15s is located on the line connecting the rotation center 15e of the substrate rotation holding mechanism 15 and the rotation center 16e of the substrate rotation holding mechanism 16. It becomes.

Further, in the substrate rotation holding mechanism 16 at the lower right in the figure, the midpoint of one side 16d at the leftward position of the substrate 16s is on the line connecting the rotation center 16e of the substrate rotation holding mechanism 16 and the rotation center 15e of the substrate rotation holding mechanism 15. It becomes the rotation position located at. Further, in the substrate rotation holding mechanism 16, the midpoint of one side 16d of the upward position of the substrate 16s is located on the line connecting the rotation center 16e of the substrate rotation holding mechanism 16 and the rotation center 14e of the substrate rotation holding mechanism 14. It becomes a position.

When it is further rotated, it returns to the rotation position relationship shown in FIG. 6 through a state in which the rotation position relationship shown in FIG. 7 is inverted left and right.

In the present embodiment, as described above, in the substrate rotation holding mechanisms 13 and 14, one side of the substrate 14s contour at the leftward position is located at the corner apex 13c at the rightward position of the substrate 13s contour on the line connecting the rotation centers 13e and 14e. In addition to the position where the centers of 14d face each other, in the substrate rotation holding mechanisms 13 and 15, the upward position of the substrate 15s contour is located at the corner apex 13c of the downward position of the substrate 13s contour on the line connecting the rotation centers 13e and 15e. The center of one side 15d is in a position facing each other, and in the substrate rotation holding mechanisms 15 and 16, the position of the substrate 16s contour to the left is located at the center of one side 15d of the substrate 15s contour on the line connecting the rotation centers 15e and 16e. The corner apex 16c is in a position facing each other, and in the substrate rotation holding mechanisms 16 and 14, the substrate 14s contour is directed downward to the corner apex 16c at the upward position of the substrate 16s contour on the line connecting the rotation centers 16e and 14e. Rotate in opposite directions while maintaining a phase difference in which the centers of 14d on each side of the position face each other.

As a result, the corner apex 13c in the rightward position and the center of one side 14d in the leftward position, the corner apex 13c in the downward position and the center of one side 15d in the upward position, the center of the corner 15d in the rightward position and the corner apex 16c in the leftward position, The corner apex 16c in the upward position and the center of one side 14d in the downward position face each other, that is, the substrates 13s and 14s, the substrate 13s and the substrate 15s, the substrate 15s and the substrate 16s, and the substrates, which are the closest positions, respectively. When the 16s and the substrate 14s are closest to each other, the rotation center 13e and the rotation center 14e, the rotation center 13e and the rotation center 15e, the rotation center 15e and the rotation center 16e, and the rotation center 16e rotate so that their contours do not touch each other. It is possible to set each distance at the center 14e. As a result, even if the substrates 13s to 16s are rotated, these substrates 13s to 16s do not come into contact with each other.

At the same time, the distance between the rotation centers 13e to 16e is set as short as possible as compared with the case where the four substrates 13s to 16s are rotated in the same direction, and it is unnecessary between these substrates 13s to 16s. It is possible to reduce the area where the film is formed. As a result, it is possible to reduce the amount of deposits and improve the amount of the vapor-filmed material to be evaporated, that is, the amount used for film formation of the substrate, that is, the film-forming efficiency of the vapor-filmed material, and the total amount of the vapor-filmed material to be prepared. Can be reduced.

According to the present embodiment, the same effect as that of the first embodiment can be obtained, and the number of processed sheets in one process can be increased, so that the productivity can be improved.
Further, in the present embodiment, the substrate 13s is set to rotate counterclockwise, but the direction of rotation may be opposite. In this case, the other substrates 14s to 16s also rotate in the opposite direction.

Hereinafter, a third embodiment of the film forming apparatus according to the present invention will be described with reference to the drawings.
FIG. 9 is a schematic front view showing the film forming apparatus according to the present embodiment.
In the present embodiment, the difference from the first embodiment described above is the angle of the rotation axis and the upper protective cover portion, and the other corresponding components are designated by the same reference numerals and the description thereof is omitted. do.

In the film forming apparatus 10 of the present embodiment, as shown in FIG. 9, two substrate rotation holding mechanisms 13 and 14 are provided, and the respective rotation shafts 13b and 14b are 45 ° to 75 ° with respect to the vertical direction. It is set to be in the range of °. The rotating shafts 13b and 14b are both located in the same vertical plane including the vapor deposition center 12C, and the stages 13a and 14a can rotate in different inclined planes, respectively.
Further, in the film forming apparatus 10 of the present embodiment, as shown in FIG. 9, an upper protective cover portion 18 is provided.

At the same time, as shown in FIG. 9, the substrate rotation holding mechanism 13 and the substrate rotation holding mechanism 14 in the present embodiment are bilaterally symmetrical with respect to a straight line extending in the vertical direction from the vapor deposition center 12C, and the substrate rotation holding mechanism 13 The center point of the straight line connecting the rotation center 13e of the substrate rotation holding mechanism 14 and the rotation center 14e of the substrate rotation holding mechanism 14 is set to coincide with the position extending in the vertical direction from the vapor deposition center 12C.

That is, in the first embodiment shown in FIG. 2, the substrate rotation holding mechanism 13 and the substrate rotation holding mechanism 14 in the present embodiment are mountain-folded from a straight line in the vertical direction passing through the vapor deposition center 12C in the drawing. It is said to be in a state.

Here, the rotation center 13e and the rotation center 14e are both installed so as to have the same height. Each of the rotating shafts 13b and 14b is connected to the driving unit 19 and can be rotated in the opposite direction by the driving unit 19.

When the angles formed by the rotating shafts 13b and 14b with respect to the vertical direction are large, the substrates 13s and the substrates 14s are close to each other with their main surfaces facing each other. Therefore, in this case, the substrate 13s and the substrate 14s are in a state of rotating in opposite directions when viewed in a plan view, but when viewed from a side view from a direction corresponding to a straight line connecting the rotation center 13e and the rotation center 14e. In addition, the substrate 13s and the substrate 14s are close to rotating in the same direction.

The upper protective cover portion 18 of the present embodiment is provided so as to cover a portion above the rotating shafts 13b and 14b at a position above the position where the substrate 13s and the substrate 14s are in close contact with each other.

In the substrate rotation holding mechanisms 13 and 14 in the present embodiment, the substrate rotation at the time of film formation is performed as follows.

In the present embodiment, as an initial state, in the substrate rotation holding mechanism 13, the midpoint of one side 13d of the substrate 13s is the rotation center 13e of the substrate rotation holding mechanism 13, as in the first embodiment shown in FIG. The rotation position is located on the inner upper side of the vertical plane connecting the rotation center 14e of the substrate rotation holding mechanism 14. At the same time, in the substrate rotation holding mechanism 14, the corner apex 14c of the substrate 14s is located on the upper side of the vertical plane connecting the rotation center 13e of the substrate rotation holding mechanism 13 and the rotation center 14e of the substrate rotation holding mechanism 14. do.

Here, the vertical plane connecting the rotation center 13e of the substrate rotation holding mechanism 13 and the rotation center 14e of the substrate rotation holding mechanism 14 is the same vertical plane including the vapor deposition center 12C.
That is, the midpoint of one side 13d of the substrate 13s and the corner apex 14c of the substrate 14s are the recent contacts in both the substrates 13s and 14s.

Next, in the adjacent substrate rotation holding mechanism 13 and the substrate rotation holding mechanism 14 having such relative positions, the substrate rotation holding mechanism 13 is viewed clockwise and the substrate rotation holding mechanism 14 is viewed in a plan view. Then, it is rotated counterclockwise in synchronization so that the rotation speed is the same.

At this time, as shown in FIG. 9, the substrate rotation holding mechanism 13 rotates downward on the front side of the substrate 13s in the figure, and the substrate rotation holding mechanism 14 also rotates downward on the front side of the substrate 14s in the figure.

Then, as in the first embodiment shown in FIG. 3, one side 13d of the substrate 13s in the substrate rotation holding mechanism 13 and one side 14d of the substrate 14s in the substrate rotation holding mechanism 14 are in a parallel state. In this rotational position relationship, the vapor deposition center 12C is located outside the side 13d of the substrate 13s and the side 14d of the substrate 14s, that is, the vapor deposition center 12C is located outside the contour of the substrate 13s and the substrate 14s. It will be.

At this time, in the first embodiment shown in FIG. 3, the substrate rotation holding mechanisms 13 and 14 in the present embodiment are in a state where the paper surface is folded in a mountain from a straight line in the vertical direction passing through the vapor deposition center 12C in the drawing. A side 13d of the substrate 13s and a side 14d of the substrate 14s in a parallel state are both twisted positions with respect to a straight line connecting the rotation center 13e of the substrate rotation holding mechanism 13 and the rotation center 14e of the substrate rotation holding mechanism 14. Will be.

After that, when both the substrates 13s and 14s rotate further, in the substrate rotation holding mechanism 13, the corner apex 13c of the substrate 13s becomes the rotation center 13e of the substrate rotation holding mechanism 13, as in the first embodiment shown in FIG. It is a rotation position located on the inner upper side of the vertical plane including the rotation center 14e of the substrate rotation holding mechanism 14. At the same time, in the substrate rotation holding mechanism 14, the midpoint of one side 14d of the substrate 14s is a rotation position located on the inner upper side of the vertical plane including the rotation center 13e of the substrate rotation holding mechanism 13 and the rotation center 14e of the substrate rotation holding mechanism 14. Will be.

When it is further rotated, the rotation position relationship similar to that of the first embodiment shown in FIG. 3 is reversed left and right, and then the rotation position relationship is returned to the same rotation position relationship as that of the first embodiment shown in FIG. ..

In the present embodiment, as described above, in the substrate rotation holding mechanisms 13 and 14, the substrates that are the latest contacts in both substrates 13s and 14s on the inner and upper sides of the vertical plane connecting the rotation centers 13e and 14e of the substrates 13s and 14s. From the direction in which the midpoint of one side 13d of 13s and the corner apex 14c of the substrate 14s coincide with the straight line connecting the rotation center 13e and the rotation center 14e while maintaining the phase difference in which they are in a positional state facing each other. When viewed from the side, the opposing substrates 13s and 14s are in a state of rotating in the same direction.

Moreover, since the upper side of the substrate 13s and the substrate 14s corresponding to the vapor deposition source 12 is covered with the upper protective cover portion 18, the vapor deposition material may be scattered further to the upper side through this region. do not have.

Moreover, even in the region covered by the upper protective cover portion 18 where the film formation is unnecessarily performed, most of them are the corner vertices 13c of the substrate 13s contour and the corner vertices 14c of the substrate 14s contour. Is a region through which is alternately passed, reducing unnecessary film formation performed during the entire film formation time, reducing the amount of deposits, and evaporating the amount of the vapor deposition material used for film formation on the substrate, that is, , It is possible to improve the film formation efficiency of the vapor-filmed material, and it is possible to reduce the total amount of the vapor-filmed material to be prepared.

According to the present embodiment, the same effect as that of the first embodiment can be obtained, the productivity can be improved because the number of processed sheets in one process can be increased, and the volume of the film forming chamber can be reduced. Therefore, it is possible to reduce the size of the device and the vacuuming time.

Hereinafter, a fourth embodiment of the film forming apparatus according to the present invention will be described with reference to the drawings.
FIG. 10 is a perspective view showing a film forming apparatus according to the present embodiment.
The difference from the first embodiment described above in this embodiment is that it is related to the number of provided substrate rotation holding mechanisms and the angle of the rotation axis, and the other corresponding components are designated by the same reference numerals. And the explanation is omitted.

In the film forming apparatus 10 of the present embodiment, as shown in FIG. 10, four substrate rotation holding mechanisms 13 to 16 are provided so that substrates 13s to 16s having substantially the same shape can be processed at the same time.
In the film forming apparatus 10 of the present embodiment, two adjacent substrate rotation holding mechanisms 13 and 14 are provided so as to be able to rotate the substrates 13s and 14s in the same inclined plane, and two adjacent substrate rotation holding mechanisms are provided. The substrates 15s and 16s are rotatably provided in the same inclined plane. The inclined plane on which the substrates 13s and 14s rotate and the inclined plane on which the substrates 15s and 16s rotate are symmetrical with respect to a straight line parallel to the straight line connecting the rotation center 13e and the rotation center 14e through the vapor deposition center 12C. It is placed in a position.

In the film forming apparatus 10 of the present embodiment, of the four substrate rotation holding mechanisms 13 to 16, the rotation shaft 13b and the rotation shaft 14b are in a parallel state, and the rotation shaft 13b and the rotation shaft 14b are oriented in the same direction from the vertical direction. It is tilted and the tilt angle is set to be in the range of 45 ° to 75 °.

At the same time, the rotation axis 15b and the rotation axis 16b are set to be in a parallel state, the rotation axis 15b and the rotation axis 16b are inclined in the same direction from the vertical direction, and the inclination angle is set to be in the range of 45 ° to 75 °. Has been done.

At the same time, the rotary shaft 13b and the rotary shaft 15b are located in the same vertical plane, and the rotary shaft 16b and the rotary shaft 14b are located in the same vertical plane, respectively. The 13a and the stage 15a, and the stage 16a and the stage 14a are rotatable in different inclined planes.

The tilt angles of the rotary shaft 13b and the rotary shaft 14b and the tilt angles of the rotary shaft 15b and the rotary shaft 16b are all set to be equal to each other.
Further, the vertical plane including the rotary shaft 13b and the rotary shaft 15b and the vertical plane including the rotary shaft 14b and the rotary shaft 16b are parallel to each other, and are parallel to the vertical plane including the vapor deposition center 12C. It is arranged symmetrically with respect to the vertical plane including the vapor deposition center 12C.

That is, in the second embodiment shown in FIG. 6, the substrate rotation holding mechanisms 13 to 16 in the present embodiment are arranged in a state in which the paper surface is folded in a mountain from a straight line in the left-right direction passing through the vapor deposition center 12C in the drawing. There is.

Here, the rotation centers 13e to 16e are all installed so as to have the same height.
The rotary shaft 13b and the rotary shaft 14b, and the rotary shaft 15b and the rotary shaft 16b are each connected to the drive unit 19, and the drive unit 19 allows the rotary shaft 13b and the rotary shaft 14b to rotate in opposite directions in the substrate rotation plane.
At the same time, the rotary shaft 13b and the rotary shaft 15b, and the rotary shaft 16b and the rotary shaft 14b can be rotated in opposite directions in the vertical plane including the rotary shaft by the drive unit 19.

When the angles formed by the rotating shafts 13b and 15b with respect to the vertical direction are large, the substrates 13s and the substrates 15s are close to each other with their main surfaces facing each other. Therefore, in this case, the substrate 13s and the substrate 15s are in a state of rotating in opposite directions when viewed in a plan view, but when viewed from a side view from a direction corresponding to a straight line connecting the rotation center 13e and the rotation center 15e. In addition, the substrate 13s and the substrate 15s are close to rotating in the same direction.

Similarly, when the angles formed by the rotating shafts 14b and 16b with respect to the vertical direction are large, the substrates 14s and the substrates 16s are close to a state in which the main surfaces of the substrates 14s and 16s face each other. Therefore, in this case, the substrate 14s and the substrate 16s are in a state of rotating in opposite directions when viewed in a plan view, but when viewed from a side view from a direction corresponding to a straight line connecting the rotation center 14e and the rotation center 16e. In addition, the substrate 14s and the substrate 16s are close to rotating in the same direction.

In the substrate rotation holding mechanisms 13 and 14, the distance L1 between the rotation center 13e of the substrate rotation holding mechanism 13 and the rotation center 14e of the substrate rotation holding mechanism 14 is rectangular, as in the second embodiment shown in FIG. These relationships are related to half the length of one side of the substrates 13s and 14s L2 and half the diagonal length of the rectangular substrates 13s and 14s L3.
L1> L2 + L3 ……… (Equation 1)
L3> (L1) / 2 ……… (Equation 2)
2 × L3 ＞ L1 ……… (Equation 3)
It is set to meet.

In the substrate rotation holding mechanisms 15 and 16, the distance L1 between the rotation center 15e of the substrate rotation holding mechanism 15 and the rotation center 16e of the substrate rotation holding mechanism 16 is rectangular, as in the second embodiment shown in FIG. These relationships are related to half the length of one side of the substrates 15s and 16s L2 and half the diagonal length of the rectangular substrates 15s and 16s L3.
L1> L2 + L3 ……… (Equation 1)
L3> (L1) / 2 ……… (Equation 2)
2 × L3 ＞ L1 ……… (Equation 3)
It is set to meet.

As shown in FIG. 10, the vacuum chamber 11 of the film forming apparatus 10 of the present embodiment is provided with an opening / closing door 11f3 for taking in and out the vapor deposition source 12 and replenishing the vapor deposition material, and the substrates 13s and 14s. An opening / closing door 11f2 may be provided for carrying in / out and cleaning the inside of the vacuum chamber 11, and an opening / closing door 11f1 may be provided for carrying in / out the substrates 13s and 14s and cleaning the inside of the vacuum chamber 11.

The opening / closing door 11f3 can be located below the vacuum chamber 11, and the opening / closing doors 11f1 and 11f2 can be located above the vacuum chamber 11.
These opening / closing doors 11f1 to 11f3 correspond to the opening / closing door 11f in the first embodiment shown in FIG.

In the substrate rotation holding mechanisms 13 to 16 in the present embodiment, the substrate rotation at the time of film formation is performed as follows.

In the present embodiment, as an initial state, in the substrate rotation holding mechanism 13, the corner apex 13c of the substrate 13s at the position on the substrate rotation holding mechanism 14 side is the substrate rotation, as in the second embodiment shown in FIG. The rotation position is located on the line connecting the rotation center 13e of the holding mechanism 13 and the rotation center 14e of the substrate rotation holding mechanism 14. Further, in the substrate rotation holding mechanism 13, the corner apex 13c at the upward position of the substrate 13s is located in the vertical plane including the rotation center 13e of the substrate rotation holding mechanism 13 and the rotation center 15e of the substrate rotation holding mechanism 15. Set to the rotation position.

At the same time, in the board rotation holding mechanism 14, the midpoint of one side 14d of the board rotation holding mechanism 13 side position of the board 14s is on the line connecting the rotation center 13e of the board rotation holding mechanism 13 and the rotation center 14e of the board rotation holding mechanism 14. The rotation position is located at. Further, in the substrate rotation holding mechanism 14, the midpoint of one side 14d of the upward position of the substrate 14s is located in the vertical plane including the rotation center 13e of the substrate rotation holding mechanism 13 and the rotation center 16e of the substrate rotation holding mechanism 16. The rotation position to be used.

At the same time, in the substrate rotation holding mechanism 15, the midpoint of one side 14d of the upward position of the substrate 15s is located in the vertical plane including the rotation center 15e of the substrate rotation holding mechanism 15 and the rotation center 13e of the substrate rotation holding mechanism 13. Set to the rotation position. Further, in the substrate rotation holding mechanism 15, the midpoint of one side 15d of the substrate rotation holding mechanism 16 side position connects the rotation center 15e of the substrate rotation holding mechanism 15 and the rotation center 16e of the substrate rotation holding mechanism 16. The rotation position is located on the line.

Further, in the substrate rotation holding mechanism 16, the corner apex 16c of the substrate 16s at the position on the substrate rotation holding mechanism 15 side is on a line connecting the rotation center 16e of the substrate rotation holding mechanism 16 and the rotation center 15e of the substrate rotation holding mechanism 15. It is the rotational position where it is located. Further, in the substrate rotation holding mechanism 16, the corner apex 16c at the upward position of the substrate 16s is located in the vertical plane including the rotation center 16e of the substrate rotation holding mechanism 16 and the rotation center 14e of the substrate rotation holding mechanism 14. Set to the rotation position.

At this time, the vapor deposition center 12C, which is the midpoint of the rotation centers 13e to 16e of the substrate rotation holding mechanisms 13 to 16, is not located within the contours of any of the substrates 13s to 16s in a plan view.

Next, in the substrate rotation holding mechanisms 13 to 16 having such relative positions, the substrate rotation holding mechanisms 13 to 16 adjacent to each other as the closest distance are rotated so as to rotate in opposite directions in a plan view. Specifically, the board rotation holding mechanism 13 and the board rotation holding mechanism 14, the board rotation holding mechanism 14 and the board rotation holding mechanism 16, the board rotation holding mechanism 16 and the board rotation holding mechanism 15, the board rotation holding mechanism 15 and the board rotation holding mechanism. The mechanisms 13 rotate in opposite directions in a plan view and rotate in synchronization with each other so as to have the same rotation speed.

At this time, as shown in FIG. 10, the substrate rotation holding mechanism 13 rotates the opening / closing door 11f3 side of the substrate 13s in the figure downward, and the substrate rotation holding mechanism 14 also has the opening / closing door 11f3 side of the substrate 14s in the figure facing downward. Rotate to.

Then, as in the second embodiment shown in FIG. 7, one side 13d of the substrate 13s in the substrate rotation holding mechanism 13 and one side 14d of the substrate 14s in the substrate rotation holding mechanism 14 are in a parallel state. At the same time, one side 13d of the substrate 13s in the substrate rotation holding mechanism 13 and one side 15d of the substrate 15s in the substrate rotation holding mechanism 15 are in a parallel state.

At the same time, one side 15d of the substrate 15s in the substrate rotation holding mechanism 15 and one side 16d of the substrate 16s in the substrate rotation holding mechanism 16 are in a parallel state. At the same time, one side 16d of the substrate 16s in the substrate rotation holding mechanism 16 and one side 14d of the substrate 14s in the substrate rotation holding mechanism 14 are in a parallel state.

In this rotational position relationship, the thin-film deposition center 12C is located outside the contour of any of the substrates 13s to 16s in a plan view.

At this time, in the second embodiment shown in FIG. 7, the substrate rotation holding mechanisms 13 to 16 in the present embodiment are in a state where the paper surface is folded from a straight line in the left-right direction passing through the vapor deposition center 12C in the drawing. The side 13d of the substrate 13s and the side 14d of the substrate 14s in the parallel state are both twisted positions with respect to the straight line connecting the rotation center 13e and the rotation center 14e.

At the same time, one side 13d of the substrate 13s and one side 15d of the substrate 15s in the parallel state are both twisted positions with respect to the straight line connecting the rotation center 13e and the rotation center 15e.
At the same time, one side 15d of the substrate 15s and one side 16d of the substrate 16s in the parallel state are both twisted positions with respect to the straight line connecting the rotation center 15e and the rotation center 16e.
Further, one side 16d of the substrate 16s and one side 14d of the substrate 14s in the parallel state are both twisted positions with respect to the straight line connecting the rotation center 16e and the rotation center 14e.

After that, when the four substrates 13s to 16s are further rotated, in the substrate rotation holding mechanism 13, the corner apex 13c of the substrate 13s is the substrate rotation holding mechanism 13 and the substrate, as in the second embodiment shown in FIG. The rotation position is located on a straight line connecting the rotation center 13e and the rotation center 14e in the rotation surface of the rotation holding mechanism 14. At the same time, in the substrate rotation holding mechanism 13, the rotation position where the corner apex 13c of the substrate 13s is located on the upper side in the vertical plane including the rotation center 15e of the substrate rotation holding mechanism 13 and the rotation center 15e of the substrate rotation holding mechanism 15. It becomes.

At the same time, in the substrate rotation holding mechanism 14, the midpoint of one side 14d of the substrate 14s is on a straight line connecting the rotation center 13e and the rotation center 14e in the rotation plane of the substrate rotation holding mechanism 13 and the substrate rotation holding mechanism 14. It becomes the position of rotation. At the same time, in the substrate rotation holding mechanism 14, the midpoint of one side 14d of the substrate 14s is a rotation position located on the inner upper side of the vertical plane including the rotation center 14e of the substrate rotation holding mechanism 14 and the rotation center 16e of the substrate rotation holding mechanism 16. Will be.

At the same time, in the substrate rotation holding mechanism 15, the midpoint of one side 15d of the substrate 15s is on a straight line connecting the rotation center 15e and the rotation center 16e in the rotation plane of the substrate rotation holding mechanism 15 and the substrate rotation holding mechanism 16. It becomes the position of rotation. At the same time, in the substrate rotation holding mechanism 15, the rotation position where the midpoint of one side 15d of the substrate 15s is located on the inner upper side of the vertical plane including the rotation center 15e of the substrate rotation holding mechanism 15 and the rotation center 13e of the substrate rotation holding mechanism 13. Will be.

At the same time, in the substrate rotation holding mechanism 16, the corner apex 16c of the substrate 16s is positioned on a straight line connecting the rotation center 15e and the rotation center 16e in the rotation plane of the substrate rotation holding mechanism 16 and the substrate rotation holding mechanism 15. It becomes the rotation position to be performed. At the same time, in the substrate rotation holding mechanism 16, the rotation position where the corner apex 16c of the substrate 16s is located on the upper side in the vertical plane including the rotation center 16e of the substrate rotation holding mechanism 16 and the rotation center 14e of the substrate rotation holding mechanism 14. It becomes.

When it is further rotated, the rotation position relationship similar to that of the second embodiment shown in FIG. 7 is reversed left and right, and then the rotation position relationship is returned to the same rotation position relationship as that of the second embodiment shown in FIG. ..

In this embodiment, in the substrate rotation holding mechanisms 13 and 14, the rotation centers 13e and 14e of the substrates 13s and 14s are connected to each other in the rotation plane of the substrate rotation holding mechanism 13 and the substrate rotation holding mechanism 14. On the connecting line, the corner vertices 14c of the substrate 14s contour face each other at the center of the side 13d of the substrate 13s contour, while maintaining the phase difference and rotating in opposite directions in synchronization with each other.

At the same time, in the substrate rotation holding mechanisms 15 and 16, the contour of the substrate 16s is formed on the line connecting the rotation centers 15e and 16e of the substrates 15s and 16s in the rotation plane of the substrate rotation holding mechanism 15 and the substrate rotation holding mechanism 16. While maintaining a phase difference in which the corner vertices 15c of the contour of the other substrate 15s face each other at the center of the side 16d, they rotate in opposite directions in synchronization with each other.

At the same time, in the substrate rotation holding mechanisms 13 and 15, on the inner and upper sides of the vertical plane including the rotation centers 13e and 15e of the substrates 13s and 15s, with the midpoint of one side 13d of the substrate 13s which is the latest contact between the substrates 13s and 14s. When the corner vertices 15c of the substrate 15s are viewed from the side from the direction corresponding to the straight line connecting the rotation center 13e and the rotation center 15e while maintaining the phase difference in which they are in the positions facing each other, they face each other. The substrate 13s and the substrate 15s are in a state of rotating in the same direction in synchronization with each other.

At the same time, in the substrate rotation holding mechanisms 14 and 16, on the inner and upper sides of the vertical plane including the rotation centers 14e and 16e of the substrates 14s and 16s, with the midpoint of one side 16d of the substrate 16s which is the latest contact between the substrates 14s and 16s. When the corner vertices 14c of the substrate 14s are viewed from the side from the direction corresponding to the straight line connecting the rotation center 14e and the rotation center 16e while maintaining the phase difference in which they are in the positions facing each other, they face each other. The substrate 14s and the substrate 16s are in a state of rotating in the same direction in synchronization with each other.

According to the present embodiment, the same effect as that of the first to third embodiments can be obtained.

Hereinafter, examples of the present invention will be described.

Here, as shown in FIG. 10, a scintillation layer was formed by thin-film deposition on four substrates rotated in synchronization with each other in an inclined plane, and the first embodiment was used. The specifications at that time are shown.
Board dimensions; 460 mm x 460 mm
Distance between boards L1- (L2 + L3); 4.7 mm
Thin-film deposition material; CsI
Film thickness; 600 μm
Table 1 shows the substrate tilt angle, the substrate evaporation source distance, the substrate offset, the material adhesion efficiency (total substrate adhesion amount / total evaporation amount), and the film thickness distribution formed on the substrate at this time.

Further, the distance between the substrates L1- (L2 + L3) was increased to 95 mm as compared with Example 1, and the film was formed on four substrates as the distance between the substrates so that the substrates would not contact even if they did not rotate synchronously, and used as Comparative Example 1. .. The substrate evaporation source distance S1 indicates the shortest distance between the line connecting the rotation centers of the opposing substrates and the evaporation source. Further, the substrate offset L4 indicates the shortest distance between the perpendicular line from the center of the evaporation source and the rotation center of the substrate. In Table 1, the substrate evaporation source distance S1 is larger in Comparative Example 1 than in Example 1. In order to keep the film thickness distribution within a constant value, the substrate evaporation source distance S1 increases as the distance between the substrates increases. This is because it is necessary to increase.

Similar to Comparative Example 1, the distance between the substrates L1- (L2 + L3) is increased to 95 mm, the distance between the substrates is set so that the substrates do not contact even if they do not rotate synchronously, and the film is deposited equidistant from the two substrates. The source was arranged and a film was formed on two substrates, which was used as Comparative Example 2. Here, as the two substrates, two substrates on the same plane were selected from the four substrates of Comparative Example 1.

Similarly, a thin-film deposition source was arranged so that the distance was the same as that of Comparative Example 1, and a film was formed on one substrate to obtain Comparative Example 3. Here, as one substrate, any one of the four substrates of Comparative Example 1 was selected.

In these Examples and Comparative Examples 1 to 3, the material adhesion efficiency (total substrate adhesion amount / total evaporation amount) and the film thickness distribution formed on the substrate are shown in Table 1.

From the results shown in Table 1, it can be seen that the material adhesion efficiency can be improved by reducing the distance between the substrates and forming a film on the synchronously rotated substrate as in the present invention.

As an example of utilization of the present invention, for example, a technique of rotating a plurality of substrates to form a thin-film deposition film can be mentioned.

10 ... Deposition device 11 ... Vacuum chamber 12 ... Deposition source 12C ... Deposition center 13 to 16 ... Substrate rotation holding mechanism 13s to 16s ... Substrate 13d to 16d ... Contour side (side)
13c ~ 16c ... Corner apex (corner)
13b to 16b ... Rotating shafts 13e to 16e ... Rotating centers 13a to 16a ... Stages 11f, 11f1, 11f2, 11f3 ... Opening and closing doors 19 ... Drive unit

Claims (10)

A film-forming device that deposits a substrate with a rectangular contour while rotating around a rotation axis that intersects the main surface of the substrate and passes through the center of the substrate.
A chamber that can be evacuated and
The vapor deposition source provided under the chamber and
A plurality of substrate rotation holding mechanisms capable of rotating and holding the substrate around the axis on the upper side of the chamber,
Have,
In two of the two substrates in which the plurality of substrate rotation holding mechanisms are in close contact with each other, the corners of the contour of the other substrate face each other on the contour side of the contour of one substrate on the line connecting the rotation centers of the substrates. It is possible to rotate while maintaining the phase difference that becomes the state ,
A plurality of the vapor deposition sources are arranged in a direction connecting the rotation centers of the two substrates which are the closest positions, and the horizontal center positions of the plurality of vapor deposition sources have the largest evaporation amount of the vapor deposition material. It is set as a thin-film deposition center, and the rotation center is arranged symmetrically with respect to the thin-film deposition center.
A film forming apparatus characterized by this. The film forming apparatus according to claim 1, wherein the plurality of substrate rotation holding mechanisms are set in opposite directions in the two substrates whose closest positions are set. The dimension in which the distance between the rotation centers of the two substrates in which the plurality of substrate rotation holding mechanisms are closest to each other is half the contour side of the substrate contour and the corner portion of the contour side of the substrate contour. The claim is characterized in that it is set to be larger than the sum of the dimensions that are half of the diagonal lines connecting the two, and smaller than the diagonal dimensions connecting the corners of the contour sides of the substrate contour. The film forming apparatus according to 1 or 2. The film forming apparatus according to any one of claims 1 to 3, wherein the plurality of substrate rotation holding mechanisms are provided as symmetrical positions in the horizontal direction from a position directly above the vapor deposition source. 7 . Film forming equipment. The plurality of substrate rotation holding mechanisms are arranged so that the rotation axes are located within the same vertical plane and are tilted at the same angle with respect to the vertical direction in the two substrates closest to each other. The film forming apparatus according to any one of claims 1 to 4, wherein the film forming apparatus is characterized. The plurality of substrate rotation holding mechanisms are positioned in the same vertical plane and tilted at the same angle with respect to the vertical direction in the two substrates whose closest positions are in one direction. As well as being arranged like
7. Film forming equipment. The film forming apparatus according to any one of claims 1 to 7, further comprising the substrate rotation holding mechanism for processing four or more of the substrates. One of claims 1 to 8, wherein the plurality of the vapor deposition sources are arranged symmetrically in the horizontal direction with respect to the vapor deposition center and are arranged closer to the vapor deposition center than the rotation center . The film forming apparatus according to the above. A film forming apparatus in which at least two rectangular contour substrates are arranged on the same surface, and vapor deposition is performed while rotating around a rotation axis that intersects the substrate main surface and passes through the center of the substrate.
A chamber that can be evacuated and
The vapor deposition source provided under the chamber and
A plurality of substrate rotation holding mechanisms capable of rotating and holding the substrate around the axis on the upper side of the chamber,
Have,
A plurality of the substrate rotation holding mechanisms are set in opposite directions in the two adjacent substrates arranged on the same surface.
The distance between the rotation centers of two adjacent boards arranged on the same surface is half the dimension of the contour side of the board contour and half of the diagonal line connecting the corners of the contour side of the board contour. It is set to be larger than the sum of the dimensions and smaller than the diagonal dimension connecting the corners of the contour sides of the substrate contour .
A plurality of the vapor deposition sources are arranged in a direction connecting the rotation centers of the two substrates which are the closest positions, and the horizontal center positions of the plurality of vapor deposition sources have the largest evaporation amount of the vapor deposition material. A film forming apparatus set as a thin-film deposition center, wherein the rotation center is arranged symmetrically with respect to the thin-film deposition center.

Images