JP2020176326A - Vacuum deposition apparatus and method for manufacturing vapor deposition film - Google Patents

Abstract

To provide a vacuum deposition apparatus capable of reducing the size of a device, improving the use efficiency of a vapor deposition material and making the thickness distribution of a vapor deposition film more uniform, and a method for manufacturing the vapor deposition film.SOLUTION: The vacuum deposition apparatus comprises: an evaporation source for evaporating a vapor deposition material; one and the other masks adjacent to each other holding one and the other substrates having a vapor deposition surface vapor-deposited with the vapor deposition material, respectively; and a drive unit for rotating the one and the other masks in the in-plane direction of the vapor deposition surface at the same speed in the reverse direction to each other. The one and the other masks are rectangular; the one mask is arranged in a state that a position of a corner portion of the one mask is shifted to a position of a corner portion of the other mask; and a distance between the centers of rotation of the one and other masks is shorter than the diagonal line length of the one mask.SELECTED DRAWING: Figure 1

Description

An embodiment of the present invention relates to a vacuum vapor deposition apparatus and a method for producing a vapor deposition film.

The X-ray plane detector of the method of converting X-rays into visible light for detection includes a sensor array substrate having a scintillator film on the surface.

The scintillator film can be easily formed on the substrate by the vacuum vapor deposition method, but it is difficult to uniformly deposit the scintillator, which is a vapor deposition material, on the substrate. Therefore, a method of depositing while rotating the substrate is used.

Japanese Unexamined Patent Publication No. 2018-031785

The problem to be solved by the present invention is to provide a vacuum vapor deposition apparatus and a method for manufacturing a vapor deposition film, in which the size of the apparatus itself is reduced, the utilization efficiency of the vapor deposition material is improved, and the film thickness distribution of the vapor deposition film is made more uniform. It is to be.

The vacuum vapor deposition apparatus of the embodiment has an evaporation source for evaporating the vaporized material, and one adjacent mask and the other mask holding one substrate and the other substrate having a vapor deposition surface on which the vapor deposition material is vapor-deposited, respectively. A drive unit that rotates one mask and the other mask in the in-plane direction of the vapor deposition surface at the same speed in opposite directions. One mask and the other mask are rectangular. One mask is arranged so that the position of the corner portion is deviated from the position of the corner portion of the other mask. The distance between the center of rotation of one mask and the center of rotation of the other mask is shorter than the diagonal length of one mask.

FIG. 1 is a plan view showing the arrangement of a mask, a substrate, and a steam port when the vacuum vapor deposition apparatus shown in FIG. 5 is viewed in a plan view. FIG. 2 is a cross-sectional view showing an X-ray plane detector. FIG. 3 is a perspective view showing an X-ray detection panel. FIG. 4A is a cross-sectional view showing the vacuum vapor deposition apparatus of the first embodiment. (B) is a plan view of the vacuum vapor deposition apparatus shown in (a). FIG. 5 is a flowchart showing a method for producing a vapor-deposited film according to the first embodiment. FIG. 6 is a plan view showing the arrangement of masks of the vacuum vapor deposition apparatus of the second embodiment. FIG. 7 is a plan view showing the arrangement of the mask, the substrate, and the steam port of the vacuum vapor deposition apparatus of the third embodiment. FIG. 8 is a cross-sectional view showing a driving unit of the vacuum vapor deposition apparatus of the third embodiment. FIG. 9 is a plan view showing a driving unit of the vacuum vapor deposition apparatus of FIG. FIG. 10 is a plan view showing the arrangement of the masks of Comparative Example 1. FIG. 11 is a plan view showing the arrangement of the masks of Comparative Example 2.

Hereinafter, embodiments of the vacuum vapor deposition apparatus and the method for producing a vapor-deposited film of the first embodiment will be described. First, the configuration of the vacuum vapor deposition apparatus of the first embodiment and the X-ray plane detector manufactured by the method for manufacturing a vapor deposition film will be described.

(X-ray plane detector)
As shown in FIG. 2, the X-ray plane detector 1 includes an X-ray detection panel 2, a moisture-proof cover 3, a support plate 4, a circuit board 5, and a lead plate 6 for X-ray shielding, which are housed in a housing 9. The heat-dissipating insulating sheet 7, the support member 8, the flexible circuit board 10, and the incident window 11 attached to the opening of the housing 9 are provided.

The X-ray detection panel 2 is fixed to one side surface of the support plate 4. The support plate 4 is made of, for example, an aluminum alloy. A moisture-proof cover 3 is arranged on one side surface of the X-ray detection panel 2. The moisture-proof cover 3 is, for example, an aluminum alloy.

A circuit board 5 is fixed to the other side surface of the support plate 4 via a lead plate 6 and a heat radiating insulation sheet 7. The circuit board 5 and the X-ray detection panel 2 are connected via a flexible circuit board 10 arranged at an end portion. The support member 8 is fixed to the housing 9 and supports the support plate 4.

The opening of the housing 9 is formed at a position facing the X-ray detection panel 2. Since the incident window 11 is made of a material that transmits X-rays, the X-rays pass through the incident window 11 and are incident on the X-ray detection panel 2.

(X-ray detection panel)
Next, the detailed configuration of the X-ray detection panel 2 will be described.

As shown in FIG. 3, the X-ray detection panel 2 includes a photoelectric conversion substrate 12 and a scintillator film 13. The photoelectric conversion substrate 12 includes a glass substrate 14 and a plurality of photodetectors 15 formed in an array on the glass substrate 14. The photodetector 15 includes a TFT (thin film transistor) 16 as a switching element and a PD (photodiode) 17 as a photosensor. The photoelectric conversion substrate 12 is, for example, a square having a side of 50 cm.

The scintillator film 13 is formed directly on the photoelectric conversion substrate 12. The scintillator film 13 is located on the incident side of the X-ray of the photoelectric conversion substrate 12. The scintillator film 13 converts X-rays into light (fluorescence). The PD 17 converts the light converted by the scintillator film 13 into an electric signal. Thereby, X-rays can be detected as an electric signal.

The scintillator film 13 can be formed by depositing a scintillator material on the photoelectric conversion substrate 12. As the scintillator material, for example, a material obtained by adding thallium (Tl), thallium iodide (TlI) or the like (scintillator additive) to cesium iodide (CsI) (scintillator main material) can be used. The scintillator material is preferably CsI or TlI-added CsI. The thickness of the scintillator film 13 is preferably 100 to 1000 μm.

(Vacuum vapor deposition equipment)
Next, a vacuum vapor deposition apparatus used for depositing the scintillator film 13 on the photoelectric conversion substrate 12 will be described. Here, the photoelectric conversion board 12 is also simply referred to as a "board".

As shown in FIG. 4A, the vacuum vapor deposition apparatus 20 has a vacuum chamber 21, a mask 22, a first substrate 26, and a second substrate 27 arranged at the bottom of the vacuum chamber 21, and a vapor deposition surface thereof. It includes a first mask 28 and a second mask 29 that hold 26a and 27a so as to face the vacuum chamber 22, respectively, and a drive unit 30 that rotates the first mask 28 and the second mask 29, respectively. ..

The vacuum chamber 21 is provided with a vacuum exhaust device (not shown), whereby the inside of the vacuum chamber 21 is maintained at a pressure below atmospheric pressure.

The crucible 22 is a thin-film deposition source that houses a scintillator material that is a thin-film deposition material and heats and evaporates the thin-film deposition material. On the top surface of the crucible 22, a steam port 22a for ejecting the vapor-deposited material heated in the crucible 22 vertically upward is provided.

The crucible 22 may include a heater for heating the crucible 22, a means for cooling the crucible 22, a temperature control unit for measuring the temperature inside the crucible 22 and driving the heater, and the like.

The first substrate 26 and the second substrate 27 are held by the first mask 28 and the second mask 29, respectively, in a state where the vapor deposition surface is parallel to the horizontal direction.

The first mask 28 and the second mask 29 are detachably attached and can be taken out from the vacuum chamber 21 when the first substrate 26 and the second substrate 27 are attached.

As shown in FIG. 1, the first mask 28 and the second mask 29 are squares having the same size as each other in a plan view. Further, the first substrate 26 and the second substrate 27 fixed therein are also squares of the same size. The first mask 28 and the second mask 29 may be, for example, a square with chamfered corners.

The position of the first corner portion 28a of the first mask 28 is deviated by 45 ° from the position of the second corner portion 29a of the second mask 29. That is, a straight line _{l 1} connecting the rotation center _{P 1} of the first corner 28a and the first mask 28, the straight line _{l 2} connecting the rotation center _{P 2} of the second corner 29a and the second mask 29 The angle φ formed by is 45 °. This angle φ does not necessarily have to be 45 °, and may be an angle θ such that | tan θ | = 1. Further, the angle φ may be in the range of an angle θ ± 10 ° such that | tan θ | = 1 when the corner portion of the mask is chamfered.

Then, the first mask 28 and the second mask 29 are arranged at close intervals so that the distance WP between the mutual rotation centers P ₁ and P ₂ is shorter than the diagonal length D of the first mask. ing. That is, at least a part of the movable regions (broken circles in FIG. 1) of the first mask 28 and the second mask 29 are overlapped and arranged.

With such an arrangement, the width of the entire movable area becomes smaller than when the movable areas are not overlapped. For example, assuming that the length of one side of the first mask 28 is L, the distance W between the left and right ends of the movable regions of the first mask 28 and the second mask 29 is 2.4 L. This is 0.4 L shorter than the distance between the left and right ends when the movable regions of the first mask 28 and the second mask 29 are not overlapped. For example, if the size of one side of the first mask 28 is 600 mm, the width of the vacuum vapor deposition apparatus 20 can be shortened by 240 mm.

The first mask 28 and the second mask 29 are rotated by the drive unit 30 in the in-plane direction and in opposite directions at the same speed. In this example, the first mask 28 rotates clockwise and the second mask 29 rotates counterclockwise. When rotated in this way, the total rotation angle of the first mask 28 and the second mask 29 is 0, so that the angle φ formed by the initial straight line l ₁ and the straight line l ₂ even during rotation (FIG. 1). In the example of, 45 °) is maintained. As a result, the first mask 28 and the second mask 29 can rotate without interfering with each other. Here, the same speed may be essentially the same speed, and the rotation is maintained without the first mask 28 and the second mask 29 interfering with each other and stopping until the vapor deposition process is completed. It suffices to rotate each at the desired speed.

Steam inlet 22a of the crucible 22, a steam inlet 22a is arranged in any position in which each distance is identical to the rotational center P ₂ of the center of rotation P ₁ and the second mask 29 in the first mask 28 .. It is on the plane of symmetry of the center of rotation P ₁ and the center of rotation P ₂ (represented by the broken line S in FIG. 1).

As shown in FIGS. 4A and 4B, the drive unit 30 includes a first gear 31, a second gear 32, a third gear 33, a fourth gear 34, and a motor 35. The upper end of the shaft 31a of the first gear 31 is connected to the shaft 35a of the motor 35, the lower end is connected to the first mask 28, and is driven clockwise by the motor 35. The second gear 32 meshes with the first gear 31 and rotates in the direction opposite to that of the first gear 31. The third gear 33 meshes with the second gear 32, has the same reference circular diameter, number of teeth, and circular pitch as the second gear 32, and rotates in the direction opposite to that of the second gear 32. The fourth gear 34 meshes with the third gear 33, has the same reference circular diameter, fraction, and circular pitch as the first gear 31, and rotates in the opposite direction to the third gear 33, that is, counterclockwise. The lower end of the shaft 34a of the fourth gear 34 is connected to the second mask 29, and the second mask 29 is rotated counterclockwise. As a result, the first mask 28 and the second mask 29 can be rotated in opposite directions at the same speed.

(Manufacturing method of thin-film deposition film)
As shown in FIG. 5, the method for producing the thin-film deposition film according to the embodiment is as follows: (S1) Fixing the first substrate 26 and the second substrate 27 to the first mask 28 and the second mask 29, respectively. Step, (S2) A rotational drive step in which the first mask 28 and the second mask 29 are rotated in the in-plane direction of the vapor deposition surface of the substrate at the same speed in opposite directions by the drive unit 30, and (S3). ) A thin-film deposition step is provided in which the vapor-deposited material is evaporated from the 坩 堝 22 (evaporation source), the vapor-deposited material is vacuum-deposited on the vapor-deposited surface, and a thin-film deposition film is formed.

Hereinafter, an example of an embodiment of a method for manufacturing a thin-film vapor deposition film using the vacuum-film vapor deposition apparatus 20 shown in FIG. 4 will be described in detail.

First, the vacuum vapor deposition apparatus 20 and the first substrate 26 and the second substrate 27 are prepared. Subsequently, the first mask 28 and the second mask 29 are taken out from the vacuum vapor deposition apparatus 20, and the first substrate 26 and the second substrate 27 are attached to the first mask 28 and the second mask 29, respectively. After that, the first mask 28 and the second mask 29 to which the substrate is attached are carried into the vacuum chamber 21 and attached to the lower ends of the shafts of the first gear 31 and the fourth gear 34.

Next, the vacuum chamber 21 is sealed, and the inside of the vacuum chamber 21 is evacuated using a vacuum exhaust device. Subsequently, the motor 35 is operated to rotate the first substrate 26 and the second substrate 27. For example, the timing of starting the operation of the motor 35 may be adjusted based on the monitoring result of the temperature of the crucible 22.

Next, heating of the crucible 22 is started. After that, the vaporized material in the crucible 22 evaporates, so that the vaporized material is vapor-deposited on the first substrate 26 and the second substrate 27.

The scintillator material incident on the first substrate 26 and the second substrate 27 forms crystals on the first substrate 26 and the second substrate 27. At the initial stage of thin-film deposition, minute crystal grains are formed on the first substrate 26 and the second substrate 27, but when the vapor deposition is continued, the crystal grains eventually grow into columnar crystals. As a result, a thin-film deposition film (FIG. 3, scintillator film 13) is formed on the first substrate 26 and the second substrate 27.

According to the vacuum vapor deposition apparatus and the thin-film deposition film manufacturing method described above, the distance WP between the rotation centers of the first mask 28 and the second mask 29 is shorter than the diagonal length D of the first mask. Since the movable regions of the first mask 28 and the second mask 29 are arranged so as to overlap each other, the volume of the vacuum chamber 21 can be made smaller and the size of the vacuum vapor deposition apparatus can be made smaller. Is possible. As a result, the weight of the entire device is reduced, and a place where the floor strength is relatively low can be selected as the installation place of the device. Further, by reducing the volume of the vacuum chamber 21, the vacuum pump can be miniaturized and the vacuum exhaust time can be shortened. By shortening the exhaust time, the formation time of the scintillator film is shortened, and the production capacity of the product is improved.

Further, since the space between the first substrate and the second substrate is reduced, the amount of the vapor-deposited material that passes through the space and is lost is reduced, and the utilization efficiency of the vapor-deposited material can be improved. In addition, since the distance between the evaporation source and the rotation center P ₁ or P ₂ is shorter than when the movable regions are not overlapped, the vapor-deposited material is easily spread over the entire substrate, and the film thickness distribution is spread over the entire surface of the substrate. Becomes uniform.

In a further embodiment, the first mask 28 and the second mask 29 may be rotated by two gears having the same reference circle diameter, number of teeth, and circle pitch. In that case, the upper end of the shaft of one gear is connected to the shaft of the motor 35, and the lower end is connected to the first mask 28. The other gear meshes with the one gear, and the lower end is connected to the second mask 29.

In this example, the drive unit 30 using gears is shown, but the first mask 28 and the second mask 29 may be mechanically or electrically driven by means other than gears.

Another mechanical driving method is, for example, a method using a belt, a chain, or the like. For example, a method can be used in which a motor is attached to the first mask 28 and a belt or chain crossed once between the shaft of the first mask 28 and the shaft of the second mask 29 is attached.

As an electric drive method, motors of the same type are attached to the first mask 28 and the second mask 29, respectively, the angles of the first mask 28 and the second mask 29 are first determined, and then each motor is reversed. A method of controlling so as to rotate at the same speed in the direction can be used.

Although other embodiments will be described below, the parts exhibiting the same action and effect will be described with the same reference numerals, and detailed description of the parts will be omitted.

In the second embodiment, the first mask 28 and the second mask 29 are rectangles having the same dimensions as each other. In that case, the angle φ formed by the straight line l ₁ and the straight line l ₂ may be 45 ± 10 ° to 90 ± 10 ° depending on the ratio of the lengths of the long side and the short side. In this example, the angle φ may be an angle formed by each of the longitudinal directions of the first mask 28 and the second mask 29. As shown in FIG. 6, when the first mask 28 and the second mask 29 are rectangular with extremely short short sides and close to a rod shape, the angle φ can be 90 ± 10 °.

Also in the vacuum vapor deposition apparatus of this embodiment, the first mask 28 and the second mask 29 may be rotated in opposite directions at the same speed by the same driving unit as in the first embodiment. Further, the vacuum vapor deposition apparatus in the embodiment can also be used in the same vapor deposition film manufacturing method as in the first embodiment.

In the third embodiment, the vacuum vapor deposition apparatus includes three pairs of the first mask 28 and the second mask 29, for a total of six masks. As shown in FIG. 7, in the vacuum deposition apparatus 20 in this example, the first mask 28, the second mask 29, the third mask 36, the fourth mask 37, the fifth mask 38, and the sixth mask 39s are arranged in this order so that their rotation centers P are arranged on the same circle. The first mask 28, the third mask 36, and the fifth mask 38 rotate in the counterclockwise direction. The second mask 29, the fourth mask 37, and the sixth mask 39 are rotated by 60 ° with respect to the first mask 28, the third mask 36, and the fifth mask 38 (that is, the angle φ). = 60 °), and it rotates clockwise. The distance WP between the rotation centers P of the adjacent masks is arranged so as to be shorter than the diagonal length D.

With such an arrangement, the maximum width W of the movable area (broken line in the figure) of the mask is shortened by 0.2 L (L = length of one piece of the first mask 28) as compared with the case where the movable areas are not overlapped. ..

One crucible 22 may be arranged at the center of a circle in which six masks are lined up. In this case, it is preferable not only to rotate each mask but also to revolve all six masks. Alternatively, the crucible 22 may be arranged at the position shown in FIG. 1, one for every two masks (that is, a total of three).

Hereinafter, the drive unit 40 of the vacuum vapor deposition apparatus shown in FIG. 7 will be described with reference to FIGS. 8 and 9. As shown in FIG. 8, the drive unit 40 includes a first gear train 41 provided outside the vacuum chamber 21 and a second gear train 42.

The first gear train 41 is centered on the fifth gear 43. The shaft 43a of the fifth gear 43 is connected to the shaft 35a of the motor 35. When the first gear train 41 is viewed in a plan view, as shown in FIG. 9A, the fifth gear 43 includes the sixth gear 44, the seventh gear 45, and the fifth gear 43 having the same reference circle diameter, number of teeth, and circular pitch. The eighth gears 46 are meshed at equal intervals.

As shown in FIG. 8, the ninth gear 47 of the second gear train 42 is attached below the shaft 44a of the sixth gear 44, and the second gear train 42 is below the shaft 45a of the seventh gear 45. The tenth gear 48 is attached, and although omitted in FIG. 8, the eleventh gear 49 of the second gear train 42 is attached below the shaft of the eighth gear 46. As shown in FIG. 9B, the ninth gear 47, the tenth gear 48, and the eleventh gear 49 have the same reference circle diameter, number of teeth, and circle pitch.

As shown in FIG. 9B, the second gear train 42 includes a ninth gear 47, a tenth gear 48 and an eleventh gear 49, and a twelfth gear 50 that meshes with the ninth gear 47 and the tenth gear 48. , The 13th gear 51 that meshes with the 10th gear 48 and the 11th gear 49, the 14th gear 52 that meshes with the 11th gear 49 and the 9th gear 47, and the 12th gear 50, the 13th gear 51, and the 14th gear 52. It includes an internal gear 53 that meshes from the outside. The 12th gear 50, the 13th gear 51, and the 14th gear 52 have the same reference circle diameter, number of teeth, and circle pitch.

Although not shown, the lower end of the shaft 44a of the sixth gear 44 is the first mask 28, the lower end of the shaft 45a of the seventh gear 45 is the third mask 36, and the lower end of the shaft of the eighth gear 46 is the fifth. Mask 38 is connected. A second mask 29 is attached to the lower end of the shaft of the 12th gear 50, a third mask 36 is attached to the lower end of the shaft of the 13th gear 51, and a fifth is attached to the lower end of the shaft of the 14th gear 52. Mask 38 is attached.

When the motor 35 drives the fifth gear 43 clockwise, the sixth gear 44, the seventh gear 45, and the eighth gear 46 rotate counterclockwise, and the first mask 28, the third mask 36, and the fifth gear 46 Mask 38 is rotated counterclockwise. Further, the ninth gear 47, the tenth gear 48, and the eleventh gear 49 are also driven counterclockwise by driving the sixth gear 44, the seventh gear 45, and the eighth gear 46 counterclockwise. As a result, the 12th gear 50, the 13th gear 51, and the 14th gear 52 are driven clockwise, and the second mask 29, the fourth mask 37, and the sixth mask 39 can be rotated clockwise.

As a result, the first mask 28, the third mask 36 and the fifth mask 38, and the second mask 29, the fourth mask 37 and the sixth mask 39 are rotated in opposite directions at the same speed. Is possible. Also in this example, it is possible to use the other mechanical and electrical driving methods described above.

The vacuum vapor deposition apparatus of the third embodiment can also be used in the same method for producing a vapor deposition film as that of the first embodiment. According to the third embodiment, the vapor deposition film can be formed on a plurality of substrates at one time, so that the production capacity of the product is improved. Further, since the distance WP between the rotation centers of the adjacent masks is arranged so as to be shorter than the diagonal length D of the masks, the size of the device itself can be made smaller. is there. Thereby, the utilization efficiency of the thin-film deposition material can be improved, and the film thickness distribution of the thin-film deposition film can be made more uniform.

The number of the first mask 28 and the second mask 29 is not limited to one pair as in the first embodiment (FIG. 1) or three pairs as in the third embodiment (FIG. 7). Two pairs, four pairs or more may be provided.

[Example]
Hereinafter, an example of simulating the production of a thin-film deposition film using the vacuum vapor deposition apparatus of the embodiment will be described. By simulation by the Monte Carlo method, the adhesion amount (material utilization efficiency) and film thickness distribution of the deposited material in the following four types of vacuum vapor deposition equipment were compared.

Example 1: Arrangement of the mask shown in FIG. 1 (the length L of one side of the mask is 600 mm);
Example 2: Arrangement of the mask shown in FIG. 7 (the length L of one side of the mask is 600 mm);
Comparative Example 1: As shown in FIG. 10, the movable regions of the two masks of the first embodiment are not overlapped, and the distance WP between the rotation centers P is the same as the diagonal length D of the masks, and the masks are arranged in the same direction. Rotate to;
Comparative Example 2: As shown in FIG. 11, the arrangement in which the movable regions of the six masks of the second embodiment are not overlapped and the distance WP between the rotation centers P of the two adjacent masks is the same as the diagonal length D of the masks. Rotate each mask in the same direction with.

The results are shown in Table 1. The material utilization efficiency shows the ratio of the adhesion amount in Examples 1 and 2 when the adhesion amount of the vapor-deposited material in Comparative Examples 1 and 2 is 100%, respectively. The film thickness distribution indicates the ratio of the thickness of the thin-film film around the substrate to the thickness of the thin-film film at the center of the substrate.

As shown in Table 1, the material utilization efficiency of Example 1 was 119%, which was an improvement of 19% as compared with Comparative Example 1. The material efficiency of Example 2 was 104%, which was improved by 4% as compared with Comparative Example 2. In Comparative Example 1, the central portion was formed 11.1% thicker than the peripheral portion, whereas in Example 1, the film thickness distribution was 106.2%, and the difference in thickness was suppressed to 6.2%. , A more uniform vapor deposition film could be obtained. Regarding the film thickness distribution of Example 2, the value was 0.6% lower than that of Comparative Example 2, but this can be regarded as a substantially equivalent value. However, it is also possible to improve the film thickness distribution while maintaining high material utilization efficiency by changing the position of the crucible. For example, in this simulation, the crucible was placed on the line connecting the rotation centers of the two masks located diagonally, but the position of the crucible can be shifted in the horizontal direction, thereby improving the film thickness distribution. Can be done.

Further, the width (W) of the movable region shown in FIGS. 10 and 11 is 2.6 L in Examples 1 and 2 as compared with 2.8 L in Comparative Examples 1 and 2, which is 0.2 L shorter. From this result, it was shown that the vacuum vapor deposition apparatus can be made smaller.

20 ... Vacuum vapor deposition apparatus 26 ... First substrate 26a ... Vapor deposition surface 27 ... Second substrate 27a ... Vapor deposition surface 28 ... First mask 28a ... First corner 29 ... Second mask 29a ... Second corner Unit 30 ... Drive unit 36 ... Third mask 37 ... Fourth mask 38 ... Fifth mask 39 ... Sixth mask 40 ... Drive unit D ... Diagonal length P ... Center for rotation

Claims (6)

An evaporation source that evaporates the vaporized material and
Adjacent one mask and the other mask holding one substrate and the other substrate having a vapor deposition surface on which the vapor deposition material is vapor-deposited, respectively.
A drive unit for rotating the one mask and the other mask in the opposite directions at the same speed in the in-plane direction of the vapor deposition surface is provided.
The one mask and the other mask are rectangular, and the one mask is arranged so that the position of the corner portion is deviated from the position of the corner portion of the other mask. A vacuum vapor deposition apparatus in which the distance between the rotation centers of the other mask is shorter than the diagonal length of the one mask. The vacuum vapor deposition apparatus according to claim 1, further comprising a plurality of pairs of the one mask and the other mask, and the rotation centers of the respective masks are arranged on the same circle. The one mask and the other mask are square, and one corner of the adjacent mask is arranged so as to be offset by θ ± 10 ° with respect to the other corner, and θ is | tan θ. The vacuum vapor deposition apparatus according to claim 1 or 2, wherein the angle is | = 1. One of the adjacent masks and the other mask are rectangular, and the corners of the one mask are arranged so as to be offset from the corners of the other mask. One substrate and the other having a vapor deposition surface on which the vapor deposition material is deposited on the one mask and the other mask, in which the distance between the mask and the rotation center of the other mask is shorter than the diagonal length of the one mask. Substrate fixing process, which fixes each of the substrates
The drive unit rotates the one mask and the other mask in the opposite directions at the same speed in the in-plane direction of the vapor deposition surface, and evaporates the vaporized material from the evaporation source to vaporize the vaporized material. A method for producing a thin-film vapor film, comprising a thin-film film step in which the thin-film film is vacuum-deposited on a surface to form a thin-film film. The vapor-deposited film according to claim 4, wherein a plurality of pairs of the one mask and the other mask are provided in the substrate fixing step, and the rotation centers of the respective masks are arranged on the same circle. Production method. In the substrate fixing step, the one mask and the other mask are square, and one corner of the adjacent mask is arranged so as to be offset by θ ± 10 ° with respect to the other corner. The method for producing a vapor-deposited film according to claim 4 or 5, wherein θ is an angle at which | tan θ | = 1.

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