201114932 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及鍵膜技術，尤其涉及一種用於進行反應式賤 鍍之鍍膜裝置。 【先前技術】 [0002] 近年來，鍵膜技術於新材料技術領域得到廣泛應用。鍵 膜是指藉由氣相生成法、氧化法、離子注入法、擴散法 、電鑛法、塗布法、液相生長法等方法於基體材料表面 形成_層或幾層薄膜材料之技術。薄膜之厚度通常為幾 個納米至幾十微米，其於厚度方向之尺度與水準方向之 尺度相比非常小之特性通常使莫具有特或:之光、電、磁 等效應。並且，薄膜通常可賦予基體材料表面特殊之性 能或對基體材料表面加以防護從而大大提高基體材料之 性能。 [0003] 隨著近代工業之發展越來越多地需要用到各種化合物薄 膜，反應式濺射鍍膜技術由於反應成膜純度高、可藉由 Ο 調節工藝參數控制薄鉍成分、低溫高濺射等優點於工業 規模大生產中展現出了明顯之優勢。用於進行反應式減 射賴之設備通常包括反應η絲材，於反應室内通 入工作氣體與反應氣體後，施加電場可以於反應腔内電 離工作氣體而產生等離子體，等離子體森擊㈣即可將 粗材之原子絲出來並使4擊出來之姆原子與反應氣 體反應，從而生成化合物薄崎料並於電場仙下附著 於待鍵膜之基體材料表面’形成薄膜。201114932 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a key film technology, and more particularly to a coating apparatus for performing reactive ruthenium plating. [Prior Art] [0002] In recent years, the key film technology has been widely used in the field of new material technology. The bond film refers to a technique of forming a layer or a plurality of thin film materials on the surface of a substrate by a method such as a vapor phase formation method, an oxidation method, an ion implantation method, a diffusion method, an electromineral method, a coating method, or a liquid phase growth method. The thickness of the film is usually from a few nanometers to several tens of micrometers, and its characteristic in the thickness direction is very small compared to the dimension of the level direction, which usually causes special effects such as light, electricity, and magnetism. Moreover, the film generally imparts special properties to the surface of the substrate or protects the surface of the substrate to greatly enhance the properties of the substrate. [0003] With the development of modern industry, more and more compound films are needed. The reactive sputtering coating technology can control the thin film composition, low temperature and high sputtering by adjusting the process parameters due to the high purity of the reaction film. The advantages are obvious advantages in industrial scale production. The apparatus for performing the reaction type mitigation generally comprises reacting the η wire material, and after the working gas and the reaction gas are introduced into the reaction chamber, an electric field is applied to ionize the working gas in the reaction chamber to generate a plasma, and the plasma is smashed (4) The atomic wire of the crude material can be taken out and the silicon atom which is struck by 4 is reacted with the reaction gas to form a thin material of the compound and attached to the surface of the base material of the film to be bonded under the electric field to form a film.
[0004] 然而，由於鍍膜過程中產毕 > 儿Α丨，U 生之化合物薄膜材料亦可能沈 0982063444-0 098137009 表單編號A010I 第5頁/共21頁 201114932 積於靶材之表面，因此會造成靶材毒化（靶中毒）， 材毒化將引起濺射過程之不穩定，甚至可能產生“打^ ”現象，如此將嚴重影響反應式濺射鍍犋之穩定性與生 成化合物薄膜之性能。 ^ [0005] 有鑑於此，提供一種可以保護靶材之鍍祺裝 I為必要 【發明内容】 [0006] 以下以實施例為例說明_種相鄰兩固持件間距可調之 鍍料架 [0007][0004] However, due to the production process in the coating process, the U-based compound film material may also sink 0982063444-0 098137009 Form No. A010I Page 5 of 21 201114932 Accumulated on the surface of the target, thus causing Target poisoning (target poisoning), material poisoning will cause instability of the sputtering process, and may even cause "snap" phenomenon, which will seriously affect the stability of reactive sputtering rhodium plating and the performance of the compound film. [0005] In view of this, it is necessary to provide a plating apparatus I capable of protecting a target material. [0006] The following is an example to illustrate a plating rack with an adjustable spacing between two adjacent holding members. 0007]
-種鍍膜装置’包括—個鍍膜室、複數靶材 以及複數職機構，所述複餘材與複料板一一 * 地設置於鍍膜室内，每個驅㈣構均“_對』 驅動馬達相連接之齒輪以及與齒輪4合' 動馬達用於驅動齒輪轉動，所述鈴用在於所述。 駆動下帶動純移動，所義數_機構 馬達- 複數擋板—對應，每個齒軌均固設於—個^與化- a coating device 'includes a coating chamber, a plurality of targets, and a plurality of institutions, the composite material and the multi-layer plate are disposed in the coating chamber one by one, and each of the driving (four) structures is "_pair" driving motor phase The connecting gear and the gear 4 are combined with the 'motor' for driving the gear to rotate. The bell is used for the movement. The turbulent movement drives the pure movement, the number _ the mechanism motor - the multiple baffle - corresponding, each rack is fixed Set in - ^ and
擔板，用在於驅動馬達之驅動下藉由與 ^對應: 播板相對於與其對叙崎㈣，錢得 相對從而遮蔽該料或者使得擋板與叫^^ 露該靶材。 贫從而: [0008] 098137009 本技術方案之_裝置具有如下優點：首I所述驅動 機構可驅動擋板相對於與其對應之乾材移動，從而使得 該把材可被雜或者被暴露，被遮蔽時撞板^ 保護乾材骑聽材被毒化，當_被暴料，可使把 材it件進行錢膜’從而使得每個乾材都可避免於鑛膜 表單編號Α0101 頁/共21頁 0982063444-0 201114932 G [0009] 之則以及鍍臈之後被薄膜材料沈積，亦即，可最大限度 也保°蔓乾材’避免靶材被毒化；其次’於僅有部分輕材 被暴露進行鑛膜時’其餘之靶材可被遮蔽，從而可避免 生成之薄膜材料影響或毒化其餘靶材；再次，可靈活調 、又膜至中進行鑛膜之把材之數量與分佈位置以控制工 件之鍍膜參數；最後，本技術方案之賴裝置採用簡單 之裝置即實現了遮蔽或者暴露每個把材，不但節約成本 ，而且易於操作。 【實施方式】 以下、’Ό S附圖及實施例對本技術方案提供之鑛膜裝置進 行詳細說明。 .'J. [0010] 請一併參閲圖1與圖2，本技術方案實施例提供之鍍膜裝 置10包括一鍍膜室11、一料架12、複數靶體13、複數擋 板14、複數驅動機構15、一抽真空裝置丨6、一供氣裝置 17以及一電壓提供裝置18。 ； 卜..ι'ν::' π】！ [0011] ❹ 所述锻膜室U包括一般具有一圓筒形之反應腔110以及一 用於封閉或開放所述反應腔11〇之_閥111。所述反應腔 110用於容置所述料架12、複數靶體13、複數擋板14以 及一個或複數待鍍膜之工件，其由底壁113、與底壁113 相對之頂壁114以及連接於底壁113與頂壁114之間之圓 環形側壁115圍合而成。所述侧壁115具有一開口 115〇， 所述閘閥111與開口 115〇相對應，用於封閉所述開口 1150。於閘閥111封閉開口 1150時，可以形成封閉之反 應腔110而對待鍍膜之工件進行鍍膜工序；而於閘閥^ 不封閉所述開口 1150時，可以開放所述反應腔110，從而 098137009 表單編號A0101 第7頁/共21頁 0982063444-0 201114932 可以往反應腔110内放置待鍍膜之工件或者取出鑛膜後之 工件。 [0012] [0013] 所述料架12用於承載待鍍膜之工件，其包括環形之基座 12〇以及複數掛架122。所述基座丨20<轉動地設置於底 壁113，且基本與反應腔110同軸設置。所述複數掛架 122自基座120向頂壁114方向延伸’且基本平行於反應 腔110之中心軸線。優選地，複數掛架122等間距分佈， 並還可相對於基座120繞自身軸線轉動。每個掛架I22均 用於設置一個或複數待鍍膜之工件1從而’當料架12於 〇 驅動裝置（圖未示）乏驅動下轉動時’設置於掛架122之 待鍍膜之工件可以進行自轉與公轉’即’工件既可以繞 掛架122之中心軸線轉動，還可以繞反應腔110之中心軸 線進行轉動。 所述複數靶體13設置於反應腔110中，且環繞反應腔110 之中心轴線分佈。每個靶體13均包#·^勒•粉130以及一與 靶材130相連接之靶座電極132。所述靶材130由與待鑛 祺層相關之材料製成，用在於等離子體之撞擊下產生待 ^ 鍍膜層材料，或者於等離子體之撞擊下雇生與待鍵膜層 相關之材料並於反應氣體之輔助下生成待鑛膜層材料。 例如，當工件需要鍍鉻膜之時候，粑材13〇可以由鉻製成 。當工件需要鍍氧化鋅膜層之時候，粑材130可以由鋅製 成。輕材130 —般為長方形片狀結構，具有一個轟擊面 1 300以及一個與轟擊面1300相鄰之側面1301，所述轟擊 面1 300用在於等離子體之撞擊下產生與待鍵膜層相關之 材料。所述靶座電極132由導電材料製成’且與電墨提供 098137009 表單編號A0101 第8頁/共21頁 0982063444-0 201114932 裝置18連接。靶座電極132—般為與靶材13〇形狀相對應· 之長方形板，其可由導電件134固定於底壁113並與電壓 提供裴置18電連接。 [0014]所述複數耙體13之數量不限，其可為二個或二個以上。 本實施例中，靶體13之數量為偶數個，且偶數個靶體^ 兩兩相對分佈，即，構成多對靶體13，形成對靶式分佈 所述對乾式分佈是指兩個歡材13通以父流電，隨著交 流電流之變化交替成為陰極與陽極。具體之，本實施例 〇 中乾體13之數量為16個，1 β..:個.把..體.13.中8個乾體位於料 架12靠近侧壁115_峡鉗，即位於側壁115與料架12之間 ，並基本環繞反應腔110之中心轴線沿第一個圓分佈，另 8個則位於料架12遠離侧壁u5之一側，並基本環繞反應 腔11〇之中心轴線沿第二個圓分佈。讓第二個圓位於第一 個圓之外圍，且與第一個圓同心。優選地，每個位於料 架12靠近側壁115之一側之靶體丨3均與—個位於料架12 靠近側壁115之一側之無體13相對，且均與—個位於料架 〇 12靠近侧壁115之一側之靶體13相鄰。從而，可使得複數 靶體13對工件形成厚度較為均勻之鍍骐。本實施例中， 16個靶體13可以組成8對靶體13，每對靶體13可由兩個 均位於料架12靠近側壁115之一側之靶體13或者由兩個均 位於料架12遠離側壁115之〆側之粑體13組成，亦可由一 個位於料架12靠近側壁115之一側之靶體13與一個位於料 架12遠離側壁115之一侧之靶體13組成。當一對靶體13 均由兩個位於料架12靠近侧璧115之一側之靶體13組成時 ，該兩個靶體13相鄰且該兩僴靶體13之靶材13〇可以基本 098137009 表單編號A0101 第9頁/共21頁 0982063444-0 201114932 共面。當—對靶體13均由兩個位於料架12遠離側壁115之 側之乾體13組成時，該兩個乾體13相鄰且該兩個乾體 13之靶材13〇亦可以基本共面。當每對靶體13均由一個位 於料架12靠近侧壁11 5之一側之乾體13與一個位於料架 12遠離側壁115之一侧之靶體13組成時，該兩個靶體13 分別位於掛架122之兩侧，且該兩個靶體13之靶材130基 本平行相對。 [0015] [0016] 請一併參閱圖1至圖4，所述複數擋板14亦設置於鍍膜室 12之反應腔12〇中，每個擋板14均用於藉由一個驅動機構 15之帶動遮蔽或者暴露一個靶體13。亦即，所述複數擋 板14與複數把體13 — 一對應，其數量與複數粗體13之數 量相同。本實施例中，擋板14之數量.亦為16個。每個擋 板14均為一個彎折成半圓環形之板形結構，設置於與其 對應之靶體13附近，具有一個靠近靶材130之第一表面 140與一個遠離靶材130之第二表面142。所述第一表面 140與第二表面142相對，且均為回轉面，大致為半圓環 形，其橫截面均為半圓形。亦即，第一表面140與第二表 面142均為半圓柱形面。 所述複數驅動機構15之數量與複數擋板14之數量相同， 每個驅動機構15均用於驅動一個與其對應之擋板14相對 於一個與該擋板14對應之靶材13移動。每個驅動機構15 均包括驅動馬達150、與驅動馬達150相連接之齒輪151 以及與齒輪151嚙合之齒軌152。所述驅動馬達150可以 固設於頂壁114，且位於反應腔110外部。驅動馬達150 具有一個輸出轴1 500，所述輸出軸1 500向反應腔110内 098137009 表單編號A0101 第10頁/共21頁 0982063444-0 201114932 延伸 ，並與齒輪151固定連接，以於驅動馬達150工作時 帶動齒輪151轉動。所述齒輪151可以為柱形齒輪，其外 表面具有複數用於與齒軌152嚙合之齒牙。所述複數驅動 機構15之齒軌152與複數播板14 ——對應地相互固定◊於 本實施例中，每個齒輪151均位於一個靶材130之一側， 真靠近其側面1301。每個齒軌152均呈半圓形條狀，設置 於與其對應之擋板14之一端。優選之，每個齒軌152均可 以設置於與其對應之擋板14之第—表面140靠近頂壁114 之一端。每個齒軌152均具有複數與齒輪151嚙合之齒牙 〇 ，從而於驅動馬達150驅動齒輪151轉動時齒軌152可以 藉由與齒輪15.1.之喊合帶動固定有該齒軌152之擋板14相 對於與該擋板14對應之靶材130移動，以使得該擋板丨彳與 該靶材130相對從而遮蔽該靶材130或者使得擋板14與該 粗材130相背從而暴露該靶材130 » [0017]由於擋板14與齒軌152之橫截面形狀近似今半圓形，且齒 輪151位於靶材130头一側，因此’當擋板14藉由齒軌 152與齒輪151之唾合相對於乾材13〇轉動時，擋板“之 軌跡近似為圓形。亦就是說，當該擋板14與該把材13〇相 對時，撐板14呈半圓環形充分遮蔽乾材130，當_板14 轉動至與靶材130相背，而與靶座電極132相對時，胃推板 14暴露該㈣130。如此’不但可以暴露或遮蔽把椅⑽ ，而且使得難14轉動過程中佔有較小之移動空間。當 然，所述擋板14之形狀並不限定為彎折成半圓環形之板 形結構，齒軌152之形狀亦不限定為半圓形條狀。例如， 擋板14可為料為弧形之板形結構，可為平板結構，還 098137009 表單編號A0101 第U頁/共21頁 0982063444-0 201114932 可為其他形狀之板形結構，僅需具有可充分遮蔽靶材130 之第一表面14〇即可❶齒軌152之形狀可與擋板14之橫截 面形狀一致，亦可不一致，僅需使得齒軌152可充分穩定 地固定於擋板14，並與齒輪151穩定嚙合即可。齒軌152 固定於擋板14之位置以及齒輪151之設置位置亦不限，僅 需藉由齒軌152與齒輪151之嚙合可以實現擋板丨4相對於 鞋*材130移動從而遮蔽或暴露靶材130即可。另外，擋板 14相對於鞑材130移動之方式亦不限，可以為如本實施例 所示之轉動’亦可以為.平移。 [0018] 所述抽真空裝置1 6藉由抽氣營1 61與反應腔1 i 〇相連通， 用在於將待鍍膜之工件放入反應腔110後對反應腔110進 行抽真空。所述供氣裝置17藉由供氣管171與反應腔110 相連通’用在於抽真空後視工件待鍍膜層之需要通入工 作氣體（如氩氣），從而於複數靶材13之間施加電壓時 產生等離子體。當然，供氣裝置17還可於通入工作氣體 之同時通入反應氣體（如k稀），從而婕得被等離子體 • ：.......- ：；.：： ... 轟擊出之靶材130原子輿反應氣體產生反應，從而生成工 件待鍍之膜層。所述電壓提供裝置18用於向靶材13提供 電壓。本實施例中，由於複數靶材13呈對靶式設置，因 此，電壓提供裝置18為一個交流電源。 [0019] 本技術方案之鍍膜裝置10具有如下優點：首先，所述驅 動機構15可以驅動擋板14相對於與其對應之靶材130移動 ，從而使得該靶材130可以被遮蔽或者被暴露’當靶材 130被遮蔽時，擋板14可保護靶材130以避免靶材130被 毒化，當靶材130被暴露時’可使靶材130對工件進行鍍 098137009 表單編號A0101 第12頁/共21頁 0982063444-0 201114932 膜，從而使得每個靶材130都可以避免於鍍膜之前以及鍍 膜之後被薄膜材料沈積，亦即，可最大限度地保護靶材 130，避免靶材13〇被毒化；其次，於僅有部分靶材13〇 被暴露進行鍍膜時，其餘之靶材13〇可被遮蔽，從而玎避 免生成之薄膜材料影響或毒化其餘靶材130 ;再次，可靈 活調控鍍膜室11中進行鍍膜之靶材13〇之數量與分佈位置 以控制工件之鍍膜參數；最後，本技術方案之鍍膜裝置 10採用簡單之裝置即實現了遮蔽或者暴露每個靶材130， 不但節約成本，而且易於操作。 本技術方案之鍍膜裝置不限於前述結構，本領域普通技 術人員可根據本技術方案之―技術構思對實施例提供之鍍 膜裝置作其他各種相應之改變與變形。舉凡熟悉本案技 藝之人士援依本發明之精神所作之等效修飾或變化皆 應涵盖於以下申請專利範圍内。 【圖式簡單說明】 [0021] Ο [0022] [0023] [0024] [0025] 圖1係本技術方案實施例提供之鑛膜裝置之剖視示意圖。 圖2係本技術方案實施例提供之鍍膜裝置去除锻膜室之頂 壁後之俯視示意圖。 圖3係本技術方案實施例提供之鍍膜裝置中之一個擔板遮 蔽與該擔板對應之把材時之結構示意圖。 圖4係本技術方案實施例提供之鍍膜装置中之一個擋板暴 露與該擋板對應之靶材時之結構示意圖。 【主要元件符號說明】 鍍膜裝置：10 098137009 表單蝙號Α0101 第13頁/共21頁 0982063444-0 201114932 [0026] 鍍膜室 ：11 [0027] 反應腔 ：110 [0028] 閘閥： 111 [0029] 底壁： 113 [0030] 頂壁： 114 [0031] 侧壁： 115 [0032] 開口： 1150 [0033] 料架： 12 [0034] 基座： 120 [0035] 掛架： 122 [0036] 靶體： 13 [0037] 靶材： 130 [0038] 義擊面 ：1300 [0039] 側面： 1301 [0040] 靶座電極：132 [0041] 導電件 ：134 [0042] 擋板： 14 [0043] 第一表面：14 0 [0044] 第二表面：142The slab is driven by the driving motor by means of ^: the playing board is opposite to the opposite of it, so that the material is shielded or the baffle is exposed to the target. Phenomenon: [0008] 098137009 The device of the present invention has the following advantages: the driving mechanism of the first I can drive the baffle to move relative to the corresponding dry material, so that the material can be miscellaneous or exposed, obscured When hitting the board ^ Protecting the dry material and riding the material is poisoned. When the material is smashed, the material can be made into a money film, so that each dry material can be avoided in the film form number Α0101 page / total 21 pages 0982063444 -0 201114932 G [0009] and after the ruthenium is deposited by the film material, that is, it can also maximize the vine material to avoid the poisoning of the target; secondly, only part of the light material is exposed to the mineral film. When the remaining targets can be shielded, the resulting film material can be prevented from affecting or poisoning the remaining targets; again, the number and distribution of the mineral film can be flexibly adjusted to control the coating of the workpiece. Parameters; Finally, the device of the present invention achieves shielding or exposing each of the materials by using a simple device, which is not only cost-effective but also easy to operate. [Embodiment] The mineral film device provided by the present technical solution will be described in detail below with reference to the drawings and examples. [0010] Please refer to FIG. 1 and FIG. 2 together. The coating apparatus 10 provided by the embodiment of the present technical solution includes a coating chamber 11, a rack 12, a plurality of targets 13, a plurality of baffles 14, and a plurality of The driving mechanism 15, a vacuuming device 6, a gas supply device 17, and a voltage supply device 18. ; 卜..ι'ν::' π]! [0011] The forged film chamber U includes a reaction chamber 110 generally having a cylindrical shape and a valve 111 for closing or opening the reaction chamber 11A. The reaction chamber 110 is configured to receive the rack 12, the plurality of targets 13, the plurality of baffles 14, and one or more workpieces to be coated, and the bottom wall 113, the top wall 114 opposite to the bottom wall 113, and the connection The annular side wall 115 between the bottom wall 113 and the top wall 114 is enclosed. The side wall 115 has an opening 115, and the gate valve 111 corresponds to the opening 115, for closing the opening 1150. When the gate valve 111 closes the opening 1150, the closed reaction chamber 110 can be formed to perform a coating process on the workpiece to be coated; and when the gate valve does not close the opening 1150, the reaction chamber 110 can be opened, thereby 098137009 Form No. A0101 7 pages/total 21 pages 0982063444-0 201114932 The workpiece to be coated or the workpiece after the film is removed can be placed in the reaction chamber 110. [0013] The rack 12 is used to carry a workpiece to be coated, and includes an annular base 12 〇 and a plurality of pylons 122. The susceptor 丨 20 < rotatably disposed on the bottom wall 113 and disposed substantially coaxially with the reaction chamber 110. The plurality of pylons 122 extend from the susceptor 120 toward the top wall 114 and are substantially parallel to the central axis of the reaction chamber 110. Preferably, the plurality of pylons 122 are equally spaced and are also rotatable relative to the base 120 about its own axis. Each of the hangers I22 is used to set one or more workpieces 1 to be coated so that 'when the rack 12 is rotated under the driving drive of the crucible driving device (not shown), the workpiece to be coated on the rack 122 can be processed. The rotation and revolution 'ie' the workpiece can be rotated about the central axis of the pylon 122 and can also rotate about the central axis of the reaction chamber 110. The plurality of targets 13 are disposed in the reaction chamber 110 and distributed around the central axis of the reaction chamber 110. Each of the target bodies 13 includes a powder 130 and a target electrode 132 connected to the target 130. The target 130 is made of a material related to the layer to be mined, and is used to generate a material to be coated under the impact of a plasma, or to employ a material related to the layer to be bonded under the impact of the plasma. The material to be mineralized layer is formed with the aid of a reaction gas. For example, when the workpiece requires a chrome film, the coffin 13 can be made of chrome. When the workpiece needs to be coated with a zinc oxide film, the coffin 130 may be made of zinc. The lightweight material 130 is generally a rectangular sheet-like structure having a bombardment surface 1 300 and a side surface 1301 adjacent to the bombardment surface 1300, the bombardment surface 1 300 being used to create a layer associated with the layer to be bonded under the impact of the plasma. material. The target electrode 132 is made of a conductive material and is connected to the device 18 by an ink supply 098137009 Form No. A0101 Page 8 of 21 page 0982063444-0 201114932. The target electrode 132 is generally a rectangular plate corresponding to the shape of the target 13 ,, which may be fixed to the bottom wall 113 by the conductive member 134 and electrically connected to the voltage supply means 18. [0014] The number of the plurality of carcasses 13 is not limited, and may be two or more. In this embodiment, the number of the target bodies 13 is an even number, and an even number of target bodies are relatively distributed, that is, a plurality of pairs of target bodies 13 are formed, and the pair of target types are formed. 13 through the parent current, alternating with the alternating current to become the cathode and anode. Specifically, the number of the dry bodies 13 in the present embodiment is 16, 1 β..: one. The eight bodies in the body 13. are located on the rack 12 near the side wall 115_the tongs, that is, The side wall 115 and the rack 12 are distributed along the first circle substantially around the central axis of the reaction chamber 110, and the other 8 are located on one side of the rack 12 away from the side wall u5, and substantially surround the reaction chamber 11 The central axis is distributed along the second circle. Let the second circle be on the periphery of the first circle and be concentric with the first circle. Preferably, each of the target bodies 3 located on one side of the rack 12 near the side wall 115 is opposite to the body 13 on the side of the rack 12 adjacent to the side wall 115, and both are located at the rack 〇12. The target body 13 adjacent to one side of the side wall 115 is adjacent. Thereby, the plurality of targets 13 can be made to form a relatively uniform thickness of rhodium in the workpiece. In this embodiment, 16 target bodies 13 may constitute 8 pairs of target bodies 13, and each pair of target bodies 13 may be located on two sides of the target body 13 located on one side of the rack 12 near the side wall 115 or both of them are located in the rack 12 The body 13 which is away from the side of the side wall 115 can be composed of a target body 13 on the side of the frame 12 close to the side wall 115 and a target body 13 on the side of the frame 12 away from the side wall 115. When a pair of target bodies 13 are composed of two target bodies 13 located on one side of the rack 12 near the side sills 115, the two target bodies 13 are adjacent to each other and the targets 13 of the two yoke targets 13 can be substantially 098137009 Form No. A0101 Page 9 of 21 Page 0982063444-0 201114932 Coplanar. When the target body 13 is composed of two dry bodies 13 on the side of the rack 12 away from the side wall 115, the two dry bodies 13 are adjacent to each other and the targets 13 of the two dry bodies 13 can also be substantially surface. When each pair of target bodies 13 is composed of a dry body 13 located on one side of the rack 12 near the side wall 115, and a target 13 located on the side of the rack 12 away from the side wall 115, the two target bodies 13 They are respectively located on both sides of the pylon 122, and the targets 130 of the two targets 13 are substantially parallel to each other. [0016] Referring to FIG. 1 to FIG. 4 together, the plurality of baffles 14 are also disposed in the reaction chamber 12A of the coating chamber 12, and each of the baffles 14 is used by a driving mechanism 15. To shield or expose a target body 13. That is, the plurality of baffles 14 are in one-to-one correspondence with the plurality of bodies 13, and the number thereof is the same as the number of the plurality of bold bodies 13. In this embodiment, the number of the baffles 14 is also 16. Each of the baffles 14 is a plate-shaped structure that is bent into a semicircular ring shape and disposed adjacent to the target body 13 corresponding thereto, and has a first surface 140 adjacent to the target 130 and a second surface 142 away from the target 130. . The first surface 140 is opposite to the second surface 142 and is a rotating surface, substantially semi-circular, and has a semicircular cross section. That is, the first surface 140 and the second surface 142 are both semi-cylindrical faces. The number of the plurality of drive mechanisms 15 is the same as the number of the plurality of baffles 14, and each of the drive mechanisms 15 is for driving a corresponding baffle 14 to move relative to a target 13 corresponding to the baffle 14. Each of the drive mechanisms 15 includes a drive motor 150, a gear 151 coupled to the drive motor 150, and a rack 152 that meshes with the gear 151. The drive motor 150 can be fixed to the top wall 114 and located outside the reaction chamber 110. The drive motor 150 has an output shaft 1500 that extends into the reaction chamber 110, 098137009, Form No. A0101, Page 10/21 pages 0982063444-0 201114932, and is fixedly coupled to the gear 151 to drive the motor 150. When the work is performed, the gear 151 is rotated. The gear 151 may be a cylindrical gear having an outer surface having a plurality of teeth for meshing with the rack 152. The rack 152 of the plurality of driving mechanisms 15 is fixed to the plurality of panels 14 correspondingly to each other. In this embodiment, each of the gears 151 is located on one side of a target 130, which is close to its side 1301. Each of the racks 152 has a semi-circular strip shape and is disposed at one end of the baffle 14 corresponding thereto. Preferably, each of the racks 152 can be disposed adjacent one end of the top wall 114 of the first surface 140 of the corresponding baffle 14. Each of the racks 152 has a plurality of teeth that mesh with the gears 151, so that when the drive motor 150 drives the gears 151 to rotate, the racks 152 can be driven by the gears 15.1. Moving relative to the target 130 corresponding to the baffle 14 such that the baffle is opposed to the target 130 to shield the target 130 or cause the baffle 14 to be opposite the thick material 130 to expose the target The material 130 » [0017] Since the cross-sectional shape of the baffle 14 and the rack 152 is approximately semicircular, and the gear 151 is located on the head side of the target 130, 'when the baffle 14 is supported by the rack 152 and the gear 151 When the saliva rotates relative to the dry material 13〇, the trajectory of the baffle is approximately circular. That is, when the baffle 14 is opposed to the material 13〇, the struts 14 are substantially circularly shielded from the dry material 130. When the plate 14 is rotated away from the target 130 and opposed to the target electrode 132, the gastric push plate 14 exposes the (four) 130. Thus, not only can the chair (10) be exposed or obscured, but also the hard 14 is occupied during the rotation. Smaller moving space. Of course, the shape of the baffle 14 is not limited to bending The semicircular annular plate-shaped structure, the shape of the rack 152 is not limited to a semi-circular strip shape. For example, the baffle 14 may be a curved plate-shaped structure, which may be a flat plate structure, and also 098137009 Form No. A0101 U Pages / 21 pages 0982063444-0 201114932 may be other shapes of the plate-shaped structure, only need to have sufficient shielding of the first surface 14 of the target 130, the shape of the pinion rail 152 and the cross-sectional shape of the baffle 14 Consistently, it may be inconsistent, and only the rack 152 may be sufficiently stably fixed to the baffle 14 and stably meshed with the gear 151. The position of the rack 152 fixed to the baffle 14 and the position of the gear 151 are not limited. Only by the engagement of the rack 152 and the gear 151 can the baffle 4 move relative to the shoe 130 to shield or expose the target 130. In addition, the manner in which the baffle 14 moves relative to the coffin 130 is also Not limited, it can be a rotation as shown in this embodiment. It can also be a translation. [0018] The vacuuming device 16 is connected to the reaction chamber 1 i by the pumping camp 1 61, and is used in After the coated workpiece is placed in the reaction chamber 110, the reaction chamber 110 is performed. The gas supply device 17 is connected to the reaction chamber 110 by the gas supply pipe 171. The vacuum gas is used to pass a working gas (such as argon gas) to the workpiece to be coated, thereby being between the plurality of targets 13 When a voltage is applied, a plasma is generated. Of course, the gas supply device 17 can also introduce a reaction gas (such as k-dilute) while introducing a working gas, thereby obtaining a plasma. :.......-:; .:: ... The bombardment target 130 atomic enthalpy reaction gas reacts to form a film layer to be plated. The voltage supply device 18 is for supplying a voltage to the target 13. In the present embodiment, since the plurality of targets 13 are disposed in a target type, the voltage supply device 18 is an AC power source. [0019] The coating device 10 of the present technical solution has the following advantages: First, the driving mechanism 15 can drive the shutter 14 to move relative to the target 130 corresponding thereto, so that the target 130 can be shielded or exposed. When the target 130 is shielded, the baffle 14 can protect the target 130 from being poisoned by the target 130, and can cause the target 130 to plate the workpiece when the target 130 is exposed. 098137009 Form No. A0101 Page 12 of 21 Page 0982063444-0 201114932 film, so that each target 130 can be prevented from being deposited by the film material before and after the coating, that is, the target 130 can be protected to the maximum extent, and the target 13 is prevented from being poisoned; When only part of the target 13 〇 is exposed for coating, the remaining target 13 〇 can be shielded, thereby preventing the generated film material from affecting or poisoning the remaining target 130; again, the coating can be flexibly adjusted in the coating chamber 11 The number and distribution position of the target 13〇 are used to control the coating parameters of the workpiece; finally, the coating device 10 of the present technical solution realizes shielding or exposing each target by a simple device. 130, not only cost savings and ease of operation. The coating device of the present invention is not limited to the foregoing structure, and those skilled in the art can make various other corresponding changes and modifications to the coating device provided by the embodiment according to the technical concept of the technical solution. Equivalent modifications or variations made by those skilled in the art in light of the present invention are intended to be included within the scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS [0025] FIG. 1 is a schematic cross-sectional view of a mineral film device according to an embodiment of the present technical solution. [0025] FIG. Fig. 2 is a top plan view showing the coating device provided by the embodiment of the present invention after removing the top wall of the forging chamber. Fig. 3 is a structural schematic view showing a state in which one of the coating devices provided in the embodiment of the present invention shields the material corresponding to the supporting plate. Fig. 4 is a schematic view showing the structure of a baffle in the coating device provided by the embodiment of the present invention when the baffle is exposed to the target corresponding to the baffle. [Main component symbol description] Coating device: 10 098137009 Form bat number 101 0101 Page 13 / 21 pages 0982063444-0 201114932 [0026] Coating chamber: 11 [0027] Reaction chamber: 110 [0028] Gate valve: 111 [0029] Wall: 113 [0030] Top wall: 114 [0031] Side wall: 115 [0032] Opening: 1150 [0033] Shelf: 12 [0034] Base: 120 [0035] Hanging: 122 [0036] Target: 13 [0037] Target: 130 [0038] Sense surface: 1300 [0039] Side: 1301 [0040] Target electrode: 132 [0041] Conductive: 134 [0042] Baffle: 14 [0043] First surface :14 0 [0044] Second surface: 142
098137009 表單編號A0101 第14頁/共21頁 0982063444-0 201114932 [0045] [0046] [0047] [0048] [0049] [0050] [0051] ❹ [0052] [0053] [0054] 驅動機構：15 驅動馬達：150 輸出軸：1 500 齒輪：151 齒軌：152 抽真空裝置：1 6 抽氣管：161 供氣裝置：17 供氣管：171 電壓提供裝置：18 098137009 表單編號A0101 第15頁/共21頁 0982063444-0098137009 Form No. A0101 Page 14 / 21 page 0992063444-0 201114932 [0045] [0049] [0050] [0051] [0054] [0054] [0054] Drive mechanism: 15 Drive motor: 150 Output shaft: 1 500 Gear: 151 rack: 152 Vacuum: 1 6 Extractor: 161 Air supply: 17 Air supply: 171 Voltage supply: 18 098137009 Form No. A0101 Page 15 of 21 Page 0982063444-0