JP7033429B2 - Semiconductor wafer position detection device and semiconductor wafer position detection method, as well as semiconductor wafer positioning device and semiconductor wafer positioning method - Google Patents

Description

The present invention relates to a semiconductor wafer position detection device and a semiconductor wafer position detection method, and a semiconductor wafer positioning device and a semiconductor wafer positioning method.

Conventionally, a semiconductor wafer positioning device provided with a position detecting device for detecting the position of the wafer based on a dicing line formed on the semiconductor wafer (hereinafter, also simply referred to as “wafer”) is known (for example). , Patent Document 1).
On the other hand, a position detection device that detects the position of a wafer by using sound waves is known (see, for example, Patent Document 2).

Japanese Unexamined Patent Publication No. 2010-177691 Japanese Unexamined Patent Publication No. 2006-269915

However, in the conventional control device 14 (semiconductor wafer position detection device) as described in Patent Document 1, a two-dimensional image of the dicing line is captured to detect the position of the semiconductor wafer W (wafer), so that an external force is applied. When a wafer in which a modified layer is formed so as to be divided into a plurality of pieces by adding is targeted for position detection, the modified layer does not appear in the appearance, so that the modified layer is two-dimensional. The inconvenience that the image cannot be captured and the position cannot be detected occurs. Further, in the alignment device (semiconductor wafer positioning device) of Patent Document 1 provided with such a position detection device, there is a problem that the wafer having the modified layer formed inside cannot be positioned at a predetermined position. do.
Further, in the conventional positioning device for a semiconductor wafer with a support plate (semiconductor wafer positioning device) as described in Patent Document 2, it is suggested that the position of the wafer is detected by ultrasonic waves (sonication). , A sound wave is transmitted to the outer edge of the wafer W (wafer) to receive the reflected wave reflected from the support plate G and the wafer, and the position of the outer edge of the wafer is detected from the time lag in which the reflected wave is received. With respect to the wafer in which the modified layer is formed, there is a problem that the wafer cannot be positioned so as to be arranged at a predetermined position based on the position of the modified layer.

An object of the present invention is a semiconductor wafer position detection device and a semiconductor wafer capable of detecting the position of a semiconductor wafer in which a modified layer is formed so as to be divided into a plurality of flake bodies by applying an external force. It is an object of the present invention to provide a position detection method, a semiconductor wafer positioning device capable of positioning such a semiconductor wafer to be positioned at a predetermined position, and a semiconductor wafer positioning method.

The present invention has adopted the configuration described in the claims.

According to the present invention, the state of the modified layer is detected from at least one of the sound wave and the radio wave propagating the wafer, and the position of the wafer is detected from the detection result. The position of the semiconductor wafer in which the modified layer is formed so as to be divided can be detected.
Further, according to the present invention, the state of the modified layer is detected from at least one of the sound wave and the radio wave propagating the wafer, the position of the wafer is detected from the detection result, and the position of the wafer is detected based on the detection result. Since the wafer is placed in a predetermined position, the semiconductor wafer is placed in a predetermined position even if the modified layer is formed inside so as to divide the wafer into a plurality of flake bodies by applying an external force. Positioning for placement can be performed.

The side view of the semiconductor wafer positioning apparatus which concerns on embodiment of this invention. (A) and (B) are operation explanatory views of the semiconductor wafer positioning apparatus which concerns on embodiment of this invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
The X-axis, Y-axis, and Z-axis in the present embodiment are orthogonal to each other, the X-axis and the Y-axis are axes in a predetermined plane, and the Z-axis is an axis orthogonal to the predetermined plane. do. Further, in the present embodiment, when viewed from the YD direction parallel to the Y axis and the direction is shown without specifying a figure, "up" is the direction of the arrow on the Z axis and "down" is the opposite. The direction, "left" is the X-axis arrow direction, "right" is the opposite direction, "front" is the Y-axis arrow direction, and "rear" is the opposite direction.

The semiconductor wafer positioning device 10 of the present invention determines the wafer WF based on the support means 20 that supports the wafer WF, the position detection device 30 that detects the position of the wafer WF, and the detection results of the position detection device 30. It is provided with a moving means 40 arranged at the position of.
The wafer WF is internally formed with a plurality of modified layers AL at equal intervals in two orthogonal directions so as to be divided into a plurality of flake bodies by applying an external force.

The support means 20 includes a support table 21 that can be sucked and held on the support surface 21A by a decompression means (not shown) such as a decompression pump or a vacuum ejector.

The position detecting device 30 comprises a transmitting means 31 that propagates a sound wave to the wafer WF, a receiving means 32 that receives the sound wave propagated by the wafer WF by the transmitting means 31, and a modified layer AL from the sound wave received by the receiving means 32. It is provided with an analysis means 33 that detects a state and detects the position of the wafer WF from the detection result.

The transmission means 31 is composed of a transmission device or the like capable of transmitting sound waves including ultrasonic waves.

The receiving means 32 is composed of a receiving device or the like that receives the reflected wave reflected by the sound wave transmitted by the transmitting means 31 hitting the upper surface WFA, the lower surface WFB, the modified layer AL, etc. of the wafer WF, and analyzes the received reflected wave data. It is designed to be output to the means 33.

The analysis means 33 is composed of a computer, a sequencer, a microcomputer board, etc., and has a temporal deviation in receiving the reflected wave from the reflected wave data output by the receiving means 32, and a positional deviation of the reflected wave with respect to the transmitted sound wave. , The position of the wafer WF is detected by analyzing the strength of the reflected wave and the like. Specifically, the analysis means 33 describes the state of the modified layer AL formed inside the wafer WF, for example, the number of modified layers AL, the distance between the modified layers AL, and the modified layer AL. The position of the wafer WF is detected by detecting various states such as the length, the mutual positional relationship of each modified layer AL, and the shape of each modified layer AL. The position of the wafer WF includes not only the position of the center WFC of the wafer WF and the position of the outer edge of the wafer WF, but also the orientation of the wafer WF. Further, the analysis means 33 also controls the operation of each member constituting the positioning device 10.

The moving means 40 includes a linear motor 41 as a drive device having a slider 41A that moves in the X-axis direction, and a linear motor 42 as a drive device that is supported by the slider 41A and has a slider 42A that moves in the Y-axis direction. A rotary motor 43 is provided as a drive device that supports the support table 21 with an output shaft 43A that is supported by the slider 42A and rotates about the Z axis.

The operation of the positioning device 10 described above will be described.
First, with respect to the positioning device 10 in which each member is waiting at the initial position shown in FIG. 1, the user of the positioning device 10 (hereinafter, simply referred to as “user”) operates an operation panel, a personal computer, or the like (not shown). A signal for starting automatic operation is input via means. After that, as shown by the solid line in FIG. 2A, when the user or a transfer means (not shown) such as an articulated robot or a belt conveyor places the wafer WF on the support table 21, the support means 20 reduces the pressure (not shown). The means is driven and the adsorption and holding of the wafer WF on the support surface 21A is started.

Next, the moving means 40 drives the linear motor 41, and as shown by the alternate long and short dash line in FIG. 2A, the support table 21 is moved to the right so that the wafer WF passes below the transmitting means 31 and the receiving means 32. Move towards. When the wafer WF passes below the transmitting means 31 and the receiving means 32, the position detecting device 30 drives the transmitting means 31 and the receiving means 32 to transmit sound waves toward the wafer WF and propagate the sound waves to the wafer WF. Then, the receiving means 32 receives the reflected wave reflected by hitting the upper surface WFA, the lower surface WFB, the modified layer AL, etc. of the wafer WF. When the receiving means 32 receives the reflected wave, the receiving means 32 outputs the received reflected wave data to the analysis means 33.

When the data of the reflected wave from the receiving means 32 is input, the analysis means 33 detects the state of the modified layer AL formed inside the wafer WF from the data of the reflected wave, and the wafer WF is detected from the detection result. Detects the position of. Specifically, the analysis means 33 can detect the position of the center WFC of the wafer WF from, for example, the number of modified layers AL, the distance between the modified layers AL, and the like, and for example, each modified layer AL. The position of the outer edge of the wafer WF can be detected from the mutual positional relationship of the modified layers AL and the mutual positional relationship of the modified layers AL, for example, from the mutual positional relationship of the modified layers AL and the shape of each modified layer AL. The orientation of the wafer WF can be detected, but the position of the wafer WF may be detected by any other method as long as it is based on the state of the modified layer AL.

When the position detecting device 30 detects the position of the wafer WF, the moving means 40 arranges the wafer WF at a predetermined position based on the detection result of the position detecting device 30. That is, the moving means 40 drives the linear motors 41 and 42 and the rotary motor 43, and as shown in FIG. 2B, the modification is performed in a state where the position of the center WFC of the wafer WF matches the reference position CP. The wafer WF is arranged so that the layer AL is parallel to at least one of the X-axis and the Y-axis. After that, when the carrying-out means (not shown) such as an articulated robot or a transport arm holds the wafer WF with a holding means such as a chuck cylinder or suction suction with reference to the reference position CP, the support means 20 stops driving the decompression means (not shown). After that, a unloading means (not shown) conveys the wafer WF to the next step. Next, the moving means 40 drives the linear motors 41 and 42 and the rotary motor 43 to return the support table 21 to the initial position, and thereafter, the same operation as described above is repeated.

According to the position detection device 30 as described above, the state of the modified layer AL is detected from the sound wave propagating the wafer WF, and the position of the wafer WF is detected from the detection result. The position of the wafer WF in which the modified layer AL is formed so as to be divided into flaky bodies can be detected.
Further, according to the positioning device 10 as described above, the state of the modified layer AL is detected from the sound wave propagating the wafer WF, the position of the wafer WF is detected from the detection result, and the position of the wafer WF is detected. Since the wafer WF is arranged at a predetermined position based on the result, even if the wafer WF has the modified layer AL formed inside so as to be divided into a plurality of flake bodies by applying an external force, the wafer is concerned. Positioning can be performed to place the WF in a predetermined position.

The means and processes in the present invention are not limited as long as they can perform the operations, functions or processes described for the means and processes, much less the constituents of the mere embodiment shown in the above-described embodiment. It is not limited to the process at all. For example, if the receiving means can receive at least one of the sound wave and the radio wave propagated by the semiconductor wafer by the transmitting means, it is limited to those within the technical range in light of the common general technical knowledge at the time of filing. Not done (same for other means and processes).

The support means 20 is a gripping means such as a mechanical chuck or a chuck cylinder, a Coulomb force, an adhesive (adhesive sheet, adhesive tape), an adhesive (adhesive sheet, adhesive tape), magnetic force, Bernoulli suction, suction suction, a drive device, or the like. The wafer WF may be held, and there may be no mechanism or member for holding the wafer WF.

The position detecting device 30 may detect the position of the wafer WF by arranging the wafer WF upside down or arranging it sideways, or may move the wafer WF with respect to the stopped or moving wafer WF. It may be configured to transmit and receive sound waves to and from the wafer WF, or it may be a transmission means 31 that collectively transmits sound waves to the entire wafer WF and a reception unit that collectively receives the sound waves collectively transmitted by the transmission means 31 to the entire wafer WF. The means 32 may be adopted, and in this case, there may be no moving means 40 for relatively moving the position detecting device 30 and the wafer WF, and when there is no moving means 40, for example, the position detecting device 30 Based on the detection result, a unloading means (not shown) may hold the wafer WF in a predetermined posture and convey the wafer WF to the next step.

The transmitting means 31 may transmit a sound wave in contact with the wafer WF, may be configured separately from the receiving means 32, and may be an ultrasonic wave having a frequency of 20,000 hertz or more. May be transmitted, or sound waves of less than 20,000 hertz may be transmitted.
The transmitting means 31 may be configured to transmit radio waves in place of sound waves or in combination with sound waves, and such radio waves may be electromagnetic waves of any frequency as long as they are electromagnetic waves having a frequency lower than that of infrared rays. ..

The receiving means 32 may receive sound waves in contact with the wafer WF, or may be configured such that the transmitting means 31 partially receives the sound waves collectively transmitted over the entire wafer WF.
The receiving means 32 may receive radio waves propagated by the transmitting means 31 on the wafer WF, or may be configured such that the transmitting means 31 receives the sound waves and radio waves propagated on the wafer WF.

The analysis means 33 may detect the position of the wafer WF by detecting at least one of the position of the center WFC of the wafer WF, the position of the outer edge of the wafer WF, and the orientation of the wafer WF. It is not necessary to control the operation of each member constituting the device 10.
The analysis means 33 may detect the state of the modified layer AL from the radio wave received by the receiving means 32 and detect the position of the wafer WF from the detection result, or may modify the sound wave and the radio wave received by the receiving means 32. The state of the layer AL may be detected, and the position of the wafer WF may be detected from the detection result.

The moving means 40 may be configured such that the wafer WF reciprocates within the transmission / reception range of the transmission means 31 and the reception means 32, or the wafer WF may rotate and move within the transmission / reception range of the transmission means 31 and the reception means 32. Often, in the case of these configurations, the sound wave transmission / reception range of the transmitting means 31 and the receiving means 32 may be equal to or less than the maximum width of the wafer WF.
The moving means 40 may have a configuration in which the wafer WF moves in only one direction in the transmission / reception range of the position detection device 30, for example, a configuration in which only the linear motor 41 is configured, or the wafer WF rotates in the transmission / reception range of the position detection device 30. A configuration in which only the rotary motor 43 is performed, for example, a configuration in which only the rotary motor 43 is performed, a configuration in which the linear motors 41, 42 and the rotary motor 43 are appropriately combined, or a configuration in which other drive devices are added may be used. May be good.
The moving means 40 may move the wafer WF so that the modified layer AL is parallel to at least one of the X-axis and the Y-axis after the position of the center WFC of the wafer WF is aligned with the reference position CP. After moving the wafer WF so that the modified layer AL is parallel to at least one of the X-axis and the Y-axis, the position of the center WFC of the wafer WF may be aligned with the reference position CP, or the wafer WF may be aligned with the reference position CP. The wafer WF may be moved so that the modified layer AL is parallel to at least one of the X-axis and the Y-axis while matching the position of the center WFC with the reference position CP, or the position of the center WFC of the wafer WF. At least one of the position of the outer edge of the wafer WF and the orientation of the wafer WF may be arranged at a predetermined position.

In the above embodiment, the position detecting device 30 arranges the transmitting means 31 and the receiving means 32 on one surface side of the wafer WF, transmits from the transmitting means 31, propagates the wafer WF, and propagates the surface and the modified layer thereof. An example of a position detection method using a reflection inspection method in which the receiving means 32 receives the reflected wave returned after hitting AL or the like and the analysis means 33 detects the position of the wafer WF based on the data is illustrated. The transmitting means 31 is arranged on one surface side, the receiving means 32 is arranged on the other surface side of the wafer WF, and the sound wave transmitted from the transmitting means 31 and propagated through the wafer WF is transmitted by the receiving means 32. A position detection method using a transmission inspection method in which the analysis means 33 detects the position of the wafer WF based on the received data may be used, or the sound wave wavelength is continuously changed and transmitted, and the transmitted wave and reflection are transmitted. A position detection method using a resonance inspection method in which the analysis means 33 detects the position of the wafer WF by interfering with the wave may be used, or a reflected wave obtained by propagating sound waves vertically and reflected by the modified layer AL and the lower surface WFB. A position detection method using a vertical inspection method in which the analysis means 33 detects the position of the wafer WF may be used, or a sound wave is propagated diagonally and reflection is repeated inside the wafer WF so that the analysis means 33 is the wafer WF. A position detection method using an oblique angle inspection method for detecting the position may be used, or a position using a surface wave inspection method in which sound waves are propagated along the upper surface WFA of the wafer WF and the analysis means 33 detects the position of the wafer WF. The position of the wafer WF may be detected by any method such as a detection method.

The positioning device 10 may position the wafer WF by arranging the wafer WF upside down or arranging it sideways.

The inside of the modified layer AL is fragile by changing the characteristics, characteristics, properties, materials, composition, composition, dimensions, etc. of the wafer WF by applying laser light, electromagnetic waves, vibration, heat, chemicals, chemical substances, etc. Any layer may be used, such as a layer in which the material of the wafer WF itself is altered or transformed due to chemical conversion, crushing, liquefaction or hollowing. Any layer may be used as long as the wafer is divided into a plurality of pieces by attaching an auxiliary member and indirectly applying an external force to the wafer WF via the external force applying auxiliary member, or a plurality of layers may be applied to the wafer WF. When they are formed, they may be formed at irregular intervals, may be linearly parallel to each other, or may be linearly non-parallel to each other.
The modified layer AL may be curved or polygonal, may not intersect with each other, and may be orthogonal or oblique when intersecting with each other.
The shape of the divided piece may be any shape such as a triangle, a polygon having a quadrangle or more, a circle, and an ellipse.
The external force directly or indirectly applied to divide the wafer WF into a plurality of pieces may be any force such as pressing force, tension, pressure, bending force, and vibration.
The wafer WF may have a dicing line, a planned dicing line, a street, a circuit, etc. appearing on the appearance, a modified layer AL may appear on the appearance, and indicates a crystal orientation such as a V notch or an orientation flat. The orientation mark may be formed, and when the orientation mark is formed on the wafer WF, the position detecting device 30 may be configured to detect the position of the orientation mark, or the moving means 40 may direct the orientation mark in a predetermined direction. In this state, the wafer WF may be arranged at a predetermined position.

The material, type, shape, etc. of the wafer WF are not particularly limited, and for example, the outer shape of the wafer WF may be a circular shape, an elliptical shape, a polygonal shape such as a triangle or a square shape, or another shape. However, the type of wafer WF may be a silicon semiconductor wafer, a compound semiconductor wafer, or the like.
An adhesive sheet may be attached to the upper surface WFA or the lower surface WFB of the wafer WF, and such an adhesive sheet may be, for example, an information description label, a decorative label, a protective sheet, a dicing tape, a die attach film, or a die. Any sheet such as a bonding tape or a recording layer forming resin sheet, a film, a tape, or the like may be used, and such an adhesive sheet has an adhesive force when a predetermined energy such as ultraviolet rays, X-rays, or infrared rays is applied. It may be one that decreases or one that does not decrease.

As the drive device in the above embodiment, electric devices such as a rotary motor, a linear motion motor, a linear motor, a single axis robot, and an articulated robot, and actuators such as an air cylinder, a hydraulic cylinder, a rodless cylinder, and a rotary cylinder are adopted. In addition, a combination of them directly or indirectly can be adopted.

10 ... Positioning device 20 ... Support means 30 ... Position detection device 31 ... Transmission means 32 ... Receiving means 33 ... Analytical means 40 ... Moving means AL ... Modified layer
WF ... Semiconductor wafer

Claims (4)

In a position detection device that detects the position of a semiconductor wafer,
In the semiconductor wafer, a modified layer is formed inside so as to be divided into a plurality of flake bodies by applying an external force.
A transmission means for propagating at least one of sound waves and radio waves to the semiconductor wafer,
A receiving means for receiving at least one of a sound wave and a radio wave propagating through the semiconductor wafer by the transmitting means.
A semiconductor wafer characterized by comprising an analysis means for detecting the state of the modified layer from at least one of sound waves and radio waves received by the receiving means and detecting the position of the semiconductor wafer from the detection result. Position detector. Supporting means for supporting semiconductor wafers and
A position detection device that detects the position of the semiconductor wafer, and
A moving means for arranging the semiconductor wafer at a predetermined position based on the detection result of the position detecting device is provided.
In the semiconductor wafer, a modified layer is formed inside so as to be divided into a plurality of flake bodies by applying an external force.
The position detecting device includes a transmitting means for propagating at least one of sound waves and radio waves on the semiconductor wafer, a receiving means for receiving at least one of the sound waves and radio waves propagating on the semiconductor wafer by the transmitting means, and the receiving means. A semiconductor wafer positioning device comprising an analysis means for detecting the state of the modified layer from at least one of the sound waves and radio waves received in the above and detecting the position of the semiconductor wafer from the detection result. In the position detection method for detecting the position of the semiconductor wafer,
In the semiconductor wafer, a modified layer is formed inside so as to be divided into a plurality of flake bodies by applying an external force.
A transmission step of propagating at least one of sound waves and radio waves to the semiconductor wafer,
A receiving step of receiving at least one of a sound wave and a radio wave propagating the semiconductor wafer in the transmitting step.
The semiconductor wafer is characterized by having an analysis step of detecting the state of the modified layer from at least one of the sound wave and the radio wave received in the receiving step and detecting the position of the semiconductor wafer from the detection result. Position detection method. The support process that supports the semiconductor wafer and
A position detection step for detecting the position of the semiconductor wafer and
Based on the detection result of the position detection step, the semiconductor wafer is provided with a moving step of arranging the semiconductor wafer at a predetermined position.
In the semiconductor wafer, a modified layer is formed inside so as to be divided into a plurality of flake bodies by applying an external force.
The position detection step includes a transmission step of propagating at least one of sound waves and radio waves to the semiconductor wafer, a receiving step of receiving at least one of the sound waves and radio waves propagating the semiconductor wafer in the transmission step, and the receiving step. A method for positioning a semiconductor wafer, which comprises an analysis step of detecting the state of the modified layer from at least one of the sound waves and radio waves received in the above and detecting the position of the semiconductor wafer from the detection result.

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