CN110712307A - Ultrasonic horn and wafer dividing method - Google Patents

Ultrasonic horn and wafer dividing method Download PDF

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Publication number
CN110712307A
CN110712307A CN201910566409.2A CN201910566409A CN110712307A CN 110712307 A CN110712307 A CN 110712307A CN 201910566409 A CN201910566409 A CN 201910566409A CN 110712307 A CN110712307 A CN 110712307A
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wafer
ultrasonic
dividing
modified layer
ultrasonic horn
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CN201910566409.2A
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CN110712307B (en
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邱晓明
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Disco Corp
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Disco Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/047—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by ultrasonic cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B23K26/388—Trepanning, i.e. boring by moving the beam spot about an axis
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0064—Devices for the automatic drive or the program control of the machines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/463—Mechanical treatment, e.g. grinding, ultrasonic treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices

Abstract

Provided are an ultrasonic horn and a wafer dividing method, which can suppress the generation of division residues when dividing a wafer. In the ultrasonic horn (69), the radiation surface (79) is formed in a dome shape by recessing one point side of which the ultrasonic vibration is desired to be concentrated, with the one point as a center. This makes it possible to concentrate the ultrasonic vibrations radiated from the radiation surface (79) at one point. Further, a modified layer (31) having low strength is formed along the planned dividing line (3) of the wafer (1). An ultrasonic horn (69) imparts ultrasonic vibration to the upper surface of the wafer (1) via the water (W) while moving along the planned dividing line (3). Therefore, ultrasonic vibration can be intensively applied to all the modified layers (31) of the wafer (1) for each modified layer (31). Therefore, the wafer (1) can be divided along the modified layer (31) well. As a result, the occurrence of division residue can be suppressed.

Description

Ultrasonic horn and wafer dividing method
Technical Field
The present invention relates to an ultrasonic horn and a method of dividing a wafer.
Background
Patent document 1 discloses a method of dividing a wafer having lines to be divided. In this method, a pulsed laser beam that is transparent to the wafer is irradiated along the dividing lines to form a modified layer inside the wafer. Then, an external force is applied to the modified layer to divide the wafer.
Patent document 2 describes a method of applying an external force to a wafer on which a modified layer is formed. In this method, the wafer is divided by transmitting ultrasonic vibration to the wafer placed in the water tank.
Patent document 1: japanese laid-open patent publication No. 2002-192367
Patent document 2: japanese patent laid-open publication No. 2005-135964
However, in the method of patent document 2, there is a case where a division residue occurs, that is, the wafer is not divided simultaneously for all the lines to be divided.
Disclosure of Invention
The invention aims to provide an ultrasonic horn and a wafer dividing method, which can restrain the generation of dividing residues when dividing a wafer.
An ultrasonic horn (this ultrasonic horn) of the present invention is an ultrasonic horn which gives ultrasonic vibration in a concentrated manner, and comprises: a transducer having a radiation surface formed in a dome shape by recessing one point side of the radiation surface, the one point being desired to concentrate the ultrasonic vibrations; and a case that holds an outer peripheral portion of the vibrator.
The method for dividing a wafer according to the present invention (the present dividing method) uses the present ultrasonic horn, and the wafer dividing method includes the steps of: a conveying and immersing step of placing a wafer having a modified layer formed along the lines to be divided on a placing table and immersing the placing table in a water tank, wherein the modified layer is formed by: forming the modified layer by moving a pulse laser beam along the planned dividing line of the wafer while irradiating the wafer with the pulse laser beam while positioning a condensing point of the pulse laser beam having a wavelength that transmits through the wafer inside the wafer; and a dividing step of moving the ultrasonic horn positioned above the wafer along the modified layer of the immersed wafer to sequentially apply the ultrasonic vibration to the upper surface of the wafer, thereby dividing the wafer using the modified layer as a starting point.
In the ultrasonic horn of the present invention, the transducer has a radiation surface formed in a dome shape by recessing one point side on which the ultrasonic vibration is desired to be concentrated. Therefore, the ultrasonic vibration radiated from the transducer can be concentrated at this point.
In addition, in the dividing method, the modified layer having a weak strength is formed along the lines to divide the wafer. The ultrasonic horn sequentially applies ultrasonic vibration to the upper surface of the wafer via water while moving along the planned dividing line of the wafer. Therefore, in the present dividing method, ultrasonic vibration can be applied to all the modified layers of the wafer collectively for each modified layer. Therefore, the wafer can be divided well along the modified layer, and therefore generation of division residue can be suppressed.
Drawings
Fig. 1 is a perspective view showing a wafer as an example of a workpiece according to the present embodiment.
Fig. 2 is an explanatory view showing a conveyance step and an immersion step of the dividing method of the present embodiment.
Fig. 3 is an explanatory diagram illustrating a dividing step of the dividing method of the present embodiment.
Description of the reference symbols
1: a wafer; 2 a: a front side; 2 b: a back side; 3: dividing the predetermined line; 31: a modified layer; 4: a device; 11: a conveying device; 13: a drive source; 15: an arm portion; 17: an attraction source; 171: a communication path; 19: a connecting member; 21: a carrying pad; 23: an adsorption part; 25: a frame body; 41: a loading table; 51: a water tank; 52: a nut portion; 53: an X-axis direction moving unit; 55: a sliding member; 57: an electric motor; 59: a ball screw; 61: an ultrasonic wave dividing device; 63: a high-frequency power supply unit; 65: a Y-axis direction moving unit; 66: a nut portion; 67: a lifting unit; 69: an ultrasonic horn; 71: a housing; 73: an ultrasonic vibrator; 75: a primary vibrator; 77: an ultrasonic vibration plate; 79: a radiating surface.
Detailed Description
First, the workpiece according to the present embodiment will be briefly described.
As shown in fig. 1, a wafer 1 as an example of a workpiece according to the present embodiment is, for example, a disk-shaped silicon substrate. A device region 5 containing devices 4 is formed on the front surface 2a of the wafer 1. In the device region 5, devices 4 are formed in each of the portions defined by the grid-like lines to divide 3. The back surface 2b of the wafer 1 is not provided with the device 4 and is ground by a grinding wheel or the like.
In the dividing method of the present embodiment (the present dividing method), the wafer 1 is divided along the lines to divide 3. Thereby, the wafer 1 is divided into a plurality of chips each including one device 4.
(1) Modified layer formation step
In the present dividing method, a modified layer forming step of forming a modified layer in the wafer 1 is first performed using a known technique. In the formation of the modified layer, for example, a device for irradiating a pulsed laser beam is prepared. The pulsed laser light from this apparatus has a wavelength (e.g., infrared region) that transmits through the wafer 1. While the focal point of the pulse laser beam is positioned inside the wafer 1, the pulse laser beam is moved along the planned dividing line 3 of the wafer 1 while the wafer 1 is irradiated with the pulse laser beam. As a result, as shown in fig. 2, a modified layer 31 is formed inside the wafer 1 along the lines to divide 3.
In the present embodiment, for example, the pulsed laser beam is irradiated three times onto one line to divide 3 while changing the convergence depth of the pulsed laser beam. Thereby, three modified layers 31 arranged in the thickness direction of the wafer 1 are formed along one line 3 to be divided.
(2) Carrying and immersing process
Next, a carrying step of placing the wafer 1 having the modified layer 31 on the placing table by the carrying device and an immersing step of immersing the placing table in a water tank are performed. Here, the configurations of the conveying device, the placing table, and the water tank used in the dividing method will be described.
As shown in fig. 2, the conveying device 11 of the dividing method includes: a transfer pad 21 for sucking and holding the wafer 1; a suction source 17 for the conveyance pad 21; an arm portion 15 for supporting the conveyance pad 21; a drive source 13 of the arm member 15; and a connecting member 19 for connecting the conveying pad 21 and the arm portion 15.
The drive source 13 is a drive source for the arm portion 15 and is a support member. In the arm portion 15, the base end side of the arm portion 15 is connected to the drive source 13. On the other hand, the front end side of the arm portion 15 holds the conveying pad 21 via the connecting member 19. The arm portion 15 is rotatable on the XY plane with the drive source 13 as a rotation axis. The arm 15 can be vertically moved up and down along the Z axis by using the driving source 13 as an elevating axis.
The transfer pad 21 includes an adsorption portion 23 for sucking and holding the wafer 1 and a frame 25 for covering the adsorption portion 23. The frame 25 is connected to the connecting member 19 and supports the suction unit 23. The adsorption part 23 is formed of a porous material such as porous ceramic and is formed in a disc shape.
The suction source 17 includes a vacuum generator, a compressor, and the like, and has a communication path 171 extending in the Z direction. The communication path 171 passes through the arm 15, the connecting member 19, and the frame 25 to reach the suction portion 23. Therefore, the suction source 17 is connected to the suction unit 23 through the communication path 171. The suction source 17 sucks the suction unit 23 through the communication path 171, and a negative pressure is generated on the front surface of the suction unit 23. The suction unit 23 sucks and holds the wafer 1 by the negative pressure.
As shown in fig. 2, the placing table 41 has a placing surface parallel to the XY plane, and the placing table 41 is disposed and fixed on the bottom of the water tank 51. The placing table 41 has a rotation axis (not shown) extending in the Z-axis direction, and the placing table 41 is rotatable about the rotation axis in the XY plane. The mounting table 41 can rotate at least 90 ° around the rotation axis in the water tank 51, for example.
The water tank 51 has a nut portion 52 disposed at the center of the lower surface. The water tank 51 is supported by the X-axis direction moving unit 53 via a slide member 55 that is movable in the X-axis direction. The X-axis moving unit 53 is a member for moving the water tank 51 in the X-axis direction (direction perpendicular to the paper surface). The X-axis direction moving unit 53 includes a ball screw 59 disposed parallel to the X-axis and a motor 57 for rotating the ball screw 59. The ball screw 59 engages with the nut portion 52 of the water tank 51. Therefore, the ball screw 59 is rotated by the driving force of the motor 57, and the water tank 51 receives a moving force via the nut portion 52 and moves in the X-axis direction.
The conveying step and the immersing step of the dividing method using the conveying device 11 and the placing table 41 having the above-described configurations will be described. First, a protective tape T for protecting the device 4 is pasted on the front surface 2a of the wafer 1. Then, the arm 15 is rotated in the XY plane by the driving force from the driving source 13, and the transfer pad 21 is disposed above the rear surface 2b side of the wafer 1 placed at a predetermined position. Then, the arm 15 is lowered in the Z direction, and the transfer pad 21 is brought into contact with the back surface 2b of the wafer 1. Further, the suction source 17 is operated to suck and hold the wafer 1 by the suction portion 23 of the transfer pad 21.
In this state, the arm 15 is rotated and raised and lowered, and the wafer 1 is placed on the placing table 41 in the water tank 51. The wafer 1 is fixed to the placing table 41 by a known method. Then, the position of the wafer 1 in the XY plane is adjusted so that the direction of the line 3 to divide the wafer 1 is along the X axis direction and the Y axis direction. This adjustment can be performed by rotation in the XY plane of the mounting table 41.
Next, water is supplied into the water tank 51 from a water supply source not shown, and the water tank 51 is filled with a predetermined amount of water W. Thereby, the wafer 1 held by the mounting table 41 in the water tank 51 is immersed.
Then, the suction force from the suction source 17 is stopped, and the transfer pad 21 is separated from the wafer 1 and moved upward in the Z direction. Thereby, the conveyance and immersion process is completed.
(3) Dividing step
Next, a dividing step of dividing the immersed wafer 1 into chips by using ultrasonic vibration is performed. In the dividing step, as shown in fig. 3, the ultrasonic dividing device 61 is disposed on the immersed wafer 1. Then, the ultrasonic horn 69 positioned above the wafer 1 is moved along the lines to divide 3 of the wafer 1 to sequentially apply ultrasonic vibration to the lines to divide 3 on the upper surface of the wafer 1, thereby dividing the wafer 1 from the modified layer 31 as a starting point.
The following describes the configuration of the ultrasonic segmentation apparatus 61 used in the present segmentation method.
As shown in fig. 3, the ultrasonic segmentation apparatus 61 includes: a high-frequency power supply unit 63 that outputs a high-frequency voltage; an ultrasonic horn 69 that radiates ultrasonic vibration; a Y-axis direction moving unit 65 for moving the ultrasonic horn 69 in the Y-axis direction; a lifting unit 67 for lifting and lowering the ultrasonic horn 69; and a nut portion 66 that engages with the Y-axis direction moving unit 65 and the lifting unit 67.
The high-frequency power supply section 63 outputs a high-frequency voltage to the ultrasonic horn 69. The Y-axis direction moving unit 65 is a member for moving the ultrasonic horn 69 in the Y-axis direction, and includes a ball screw extending in the Y-axis direction. The nut portion 66 engages with the ball screw of the Y-axis direction moving unit 65, and moves in the Y-axis direction as the ball screw rotates.
The lower end of the elevation unit 67 holds an ultrasonic horn 69. The upper end of the lifting unit 67 is held by the nut portion 66 so as to be able to lift in the Z-axis direction. Therefore, the elevation unit 67 can be elevated in the Z-axis direction together with the ultrasonic horn 69.
Next, the ultrasonic horn 69 will be explained. As shown in fig. 3, the ultrasonic horn 69 includes an ultrasonic transducer 73 that radiates ultrasonic vibration, and a case 71 that holds the outer peripheral portion of the ultrasonic transducer 73.
The ultrasonic transducer 73 includes a primary transducer 75 connected to the high-frequency power supply unit 63 and an ultrasonic vibration plate 77 adjacent to the primary transducer 75. The primary oscillator 75 is configured to receive a high-frequency voltage of 1MHz to 3MHz from the high-frequency power supply unit 63 and vibrate. The ultrasonic vibration plate 77 is disposed adjacent to the primary transducer 75, and has a radiation surface 79 for radiating ultrasonic vibration. The ultrasonic vibration plate 77 resonates with the vibration of the primary vibrator 75, and radiates ultrasonic vibration from the radiation surface 79 via the water W. Here, the radiation surface 79 is formed in a dome shape so that the ultrasonic vibration radiated from the radiation surface 79 forms a focal point at a position distant from the radiation surface 79 by a predetermined distance. Therefore, the ultrasonic vibration radiated from the radiation surface 79 is focused on the focal point. That is, the radiation surface 79 as one surface of the ultrasonic transducer 73 is formed in a dome shape by recessing one point side (which is a point desired to concentrate ultrasonic vibrations) around the focal point.
The ultrasonic dicing apparatus 61 includes an alignment camera, not shown, which can photograph the front surface 2a of the wafer 1 by transmitting the wafer 1 from the back surface 2b of the wafer 1. The alignment camera is for example an infrared camera. By using this alignment camera, the modified layer 31 can be imaged from the back surface 2b side of the wafer 1.
The dividing step of the present dividing method using the ultrasonic dividing device 61 having such a configuration will be described. After the immersion step is performed, the ultrasonic wave dividing device 61 is disposed on the back surface 2b of the immersed wafer 1 held on the mounting table 41.
Next, the relative position of the ultrasonic horn 69 in the XY plane with respect to the wafer 1 is controlled using the X-axis direction moving means 53 and the Y-axis direction moving means 65. By this control, the focal point of the ultrasonic transducer 73 (the focal point of the radiation surface 79) of the ultrasonic horn 69 is arranged above the first line to divide 3 of the wafer 1 extending in the X direction. In addition, the alignment camera described above is used in this control.
Next, the elevation means 67 is controlled to control the position of the ultrasonic horn 69 in the Z-axis direction. By this control, the height of the focal point of the ultrasonic transducer 73 becomes the height of the back surface 2b of the wafer 1. Thereby, the focal point of the ultrasonic transducer 73 is arranged on the line to divide 3 on the back surface 2b of the wafer 1. In this state, the high-frequency power supply unit 63 is driven to output a high-frequency voltage to the ultrasonic transducer 73, and ultrasonic vibration is radiated from the ultrasonic transducer 73. Thereby, the ultrasonic vibration is intensively radiated toward the back surface 2b of the wafer 1 directly above the modified layer 31 formed along the planned dividing line 3 of the wafer 1 by the water W in the water tank 51. In addition, the focal point of the ultrasonic transducer 73 may be positioned on the modified layer 31.
While the ultrasonic vibration is radiated from the ultrasonic transducer 73 of the ultrasonic horn 69 toward the modified layer 31 formed along the lines to divide 3, the ultrasonic horn 69 is moved relative to the wafer 1 along the lines to divide 3 extending in the X-axis direction. That is, the motor 57 of the X-axis moving unit 53 holding the water tank 51 is driven to move the placement table 41 in the X-axis direction together with the water tank 51. After the ultrasonic vibrations are radiated to the entire region of one planned dividing line 3, the focus of the ultrasonic transducer 73 is aligned with another planned dividing line 3 at a different position in the Y-axis direction extending in the X-axis direction by using the Y-axis direction moving means 65 and the elevating means 67, and the ultrasonic horn 69 and the water tank 51 are relatively moved along the planned dividing line 3 in the X-axis direction.
Thus, ultrasonic vibrations are radiated to the entire region of all the planned dividing lines 3 parallel to one direction on the wafer 1. Then, the placing table 41 is rotated by 90 °, and ultrasonic vibrations are radiated in the same manner to the line to divide 3 perpendicular to the line to divide 3 to which ultrasonic vibrations have been radiated.
In this way, ultrasonic vibration is applied to the entire region of all the planned dividing lines 3 of the wafer 1. In the wafer 1, an external force due to ultrasonic vibration is applied to the back surface 2b of the wafer 1, which is the surface opposite to the surface on which the lines to divide 3 are formed, and fracture occurs starting from the modified layer 31 having low strength formed along the lines to divide 3. Thus, the wafer 1 is divided along the dividing lines 3. In this way, the wafer 1 is diced to generate a plurality of chips.
In the above-described embodiment, the water tank 51 is moved in the X-axis direction to divide along the line to divide extending in the X-axis direction, but the ultrasonic horn 69 may be moved in the Y-axis direction to divide the line to divide extending in the Y-axis direction.
As described above, in the ultrasonic horn 69 used in the present dividing method, the radiation surface 79, which is one surface of the ultrasonic transducer 73, is formed in a dome shape by recessing the one point side around the focal point (which is the one point desired to concentrate the ultrasonic vibration). This can concentrate the ultrasonic vibrations radiated from the ultrasonic transducer 73 at one point.
In the dividing method, the modified layer 31 having low strength is formed along the lines to divide 3 of the wafer 1. The ultrasonic horn 69 sequentially applies ultrasonic vibration to the upper surface of the wafer 1 via the water W while moving along the planned dividing line 3 of the wafer 1. Therefore, in the present dividing method, ultrasonic vibration can be intensively applied to all the modified layers 31 of the wafer 1 for each modified layer 31. Therefore, the wafer 1 can be divided well along the modified layer 31, and therefore, the generation of the division residue can be suppressed.
The conveying device 11 and the ultrasonic wave dividing device 61 may be configured to be rotationally driven with respect to the water tank 51 so that either one of them is disposed on the wafer 1 in the water tank 51. Alternatively, the water tank 51 may be moved in a planar manner (for example, linearly) so that the wafer 1 is disposed below one of the conveying device 11 and the ultrasonic dividing device 61 which are arranged in parallel in the XY plane direction.
In the present embodiment, after the wafer 1 is placed on the placing table 41 by the transfer device 11, water is supplied into the water tank 51, and then the transfer device 11 is separated from the wafer 1. However, the present invention is not limited to this, and the wafer 1 may be placed on the placing table 41 by the transfer pad 21 of the transfer device 11, separated from the wafer 1, and then supplied into the water tank 51.
In the present embodiment, after the wafer 1 is placed on the placing table 41 arranged in advance in the water tank 51 by the transfer device 11 and the wafer 1 is aligned with respect to the placing table 41, water is supplied into the water tank 51. However, the present invention is not limited to this, and the wafer 1 may be placed on the placing table 41 in the water tank 51 storing water. Alternatively, the wafer 1 may be placed on the placing table 41 disposed outside the water tank 51 by the transfer device 11, and then the placing table 41 holding the wafer 1 may be disposed in the water tank 51 storing water.

Claims (2)

1. An ultrasonic horn which gives ultrasonic vibration in a concentrated manner, wherein,
the ultrasonic horn includes:
a transducer having a radiation surface formed in a dome shape by recessing one point side of the radiation surface, the one point being desired to concentrate the ultrasonic vibrations; and
and a case that holds the outer periphery of the vibrator.
2. A method for dividing a wafer using the ultrasonic horn of claim 1,
the wafer dividing method comprises the following steps:
a conveying and immersing step of placing a wafer having a modified layer formed along the lines to be divided on a placing table and immersing the placing table in a water tank, wherein the modified layer is formed by: forming the modified layer by moving a pulse laser beam along the planned dividing line of the wafer while irradiating the wafer with the pulse laser beam while positioning a condensing point of the pulse laser beam having a wavelength that transmits through the wafer inside the wafer; and
and a dividing step of moving the ultrasonic horn positioned above the wafer along the modified layer of the immersed wafer to sequentially apply the ultrasonic vibration to the upper surface of the wafer, thereby dividing the wafer using the modified layer as a starting point.
CN201910566409.2A 2018-07-12 2019-06-27 Ultrasonic horn and wafer dividing method Active CN110712307B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018132242A JP7140576B2 (en) 2018-07-12 2018-07-12 Wafer division method
JP2018-132242 2018-07-12

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Publication Number Publication Date
CN110712307A true CN110712307A (en) 2020-01-21
CN110712307B CN110712307B (en) 2023-03-03

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JP (1) JP7140576B2 (en)
KR (1) KR20200007696A (en)
CN (1) CN110712307B (en)
TW (1) TWI827631B (en)

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* Cited by examiner, † Cited by third party
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