CN114256127A - Holding table - Google Patents

Holding table Download PDF

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Publication number
CN114256127A
CN114256127A CN202111088163.6A CN202111088163A CN114256127A CN 114256127 A CN114256127 A CN 114256127A CN 202111088163 A CN202111088163 A CN 202111088163A CN 114256127 A CN114256127 A CN 114256127A
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CN
China
Prior art keywords
wafer
holding
holding table
support member
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202111088163.6A
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Chinese (zh)
Inventor
饭塚健太吕
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Disco Corp
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Disco Corp
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Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of CN114256127A publication Critical patent/CN114256127A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B23/00—Portable grinding machines, e.g. hand-guided; Accessories therefor
    • B24B23/02—Portable grinding machines, e.g. hand-guided; Accessories therefor with rotating grinding tools; Accessories therefor
    • B24B23/022—Spindle-locking devices, e.g. for mounting or removing the tool
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

Abstract

The invention provides a holding table which can simply and reliably hold a wafer with a concave part. The holding table holds a wafer having a recess and an annular outer peripheral portion surrounding the recess, and includes: a base; and a holding portion protruding from an upper surface of the susceptor and inserted into the recess of the wafer, the susceptor having: an annular groove provided in a region corresponding to the outer periphery of the wafer; and a support member that is provided inside the groove, changes from a softened state to a hardened state or from the hardened state to the softened state by application of energy, holds the recess of the wafer by the holding portion, and supports the outer peripheral portion of the wafer by the support member in the hardened state.

Description

Holding table
Technical Field
The present invention relates to a holding table for holding a wafer having a recess.
Background
In the process of manufacturing a device chip, a wafer is used which has, on the front surface side, a device region in which devices are formed in each of a plurality of regions defined by planned dividing lines (streets) arranged in a lattice shape, and a peripheral excess region surrounding the device region. The wafer is divided along the lines to be divided, thereby obtaining a plurality of device chips each having a device. The device chip is incorporated in various electronic apparatuses such as a mobile phone and a personal computer.
For example, a cutting device is used for dividing a wafer. The cutting device includes a holding table for holding a workpiece and a cutting unit to which an annular cutting tool for cutting the workpiece is attached. The wafer is held by the holding table, and the wafer is cut and divided by rotating the cutting tool to cut into the wafer.
In recent years, with the miniaturization of electronic devices, device chips are required to be thinner. Therefore, the wafer may be thinned before the wafer is divided. For example, a grinding device is used for thinning the wafer. The grinding device includes a holding table for holding a workpiece and a grinding unit on which a grinding wheel having a plurality of grinding stones is mounted. The wafer is held by the holding table, and the grinding wheel is brought into contact with the back surface side of the wafer while rotating the holding table and the grinding wheel, respectively, thereby grinding the back surface side of the wafer and thinning the wafer.
When the wafer is thinned by grinding, the rigidity of the wafer is lowered, and the wafer is easily broken during subsequent handling of the wafer (transportation, processing, cleaning, and the like of the wafer). Therefore, a method of grinding and thinning only a central portion of the back surface side of the wafer, which overlaps the device region, has been proposed (see patent document 1). When this method is used, the outer peripheral portion of the wafer is not thinned and is maintained in a thick state, and therefore, a decrease in rigidity of the wafer is suppressed, and breakage of the wafer is prevented.
When only the central portion of the wafer is ground as described above, a wafer having a recess formed on the back surface side and an annular outer peripheral portion surrounding the recess is obtained. When the wafer is finally divided into a plurality of device chips, first, the outer peripheral portion of the wafer that is not thinned is removed. For example, a wafer is held by a holding table of a cutting device, and a boundary region between a recess and an outer peripheral portion of the wafer is cut in a ring shape by a cutting tool, thereby separating the outer peripheral portion from the wafer (see patent document 2).
Patent document 1: japanese laid-open patent publication No. 2007 & 19379
Patent document 2: japanese laid-open patent publication No. 2007-59829
When a wafer having a concave portion is processed by a processing device such as a cutting device, the wafer is held by a holding table. For example, the wafer is disposed on the holding table so that the upper surface (holding surface) of the holding table is inserted into the recess of the wafer. Thus, the bottom surface of the recess of the wafer is held by the holding table.
At this time, the outer peripheral portion of the wafer is disposed outside the holding surface of the holding table and is not supported by the holding surface. Therefore, the wafer is insufficiently fixed to the holding table, and a processing failure is likely to occur. For example, when a wafer is cut by a cutting tool, vibration (chattering) may occur in the outer peripheral portion of the wafer, and a defect (chipping) or chipping may occur in the wafer.
Therefore, in some cases, a holding table having a columnar base (base) and a holding portion projecting upward from the central portion of the base is used for holding a wafer having a recess. When the holding table is used, the concave portion of the wafer is supported by the holding portion, and the outer peripheral portion of the wafer is supported by the susceptor. As a result, the wafer is reliably fixed to the holding table, and processing failure is less likely to occur.
However, if the depth of the recess of the wafer deviates from the amount (height) of projection of the holding portion of the chuck table, the recess and the outer peripheral portion of the wafer cannot be appropriately supported. Therefore, the amount of protrusion of the holding portion that holds the stage needs to be strictly adjusted according to the depth of the recess of the wafer. However, since the depth of the recess is different for each wafer, the amount of protrusion of the holding portion holding the table needs to be changed every time the wafer to be processed is changed. This complicates the preparation of the holding table, and reduces the wafer processing efficiency.
Disclosure of Invention
The present invention has been made in view of the above problems, and an object of the present invention is to provide a holding table capable of easily and reliably holding a wafer having a concave portion.
According to one aspect of the present invention, there is provided a holding table for holding a wafer having a recess and an annular outer peripheral portion surrounding the recess, the holding table including: a base; and a holding portion that protrudes from an upper surface of the susceptor and is inserted into the recess of the wafer, the susceptor having: an annular groove provided in a region corresponding to the outer peripheral portion of the wafer; and a support member that is provided inside the groove, changes from a softened state to a hardened state or from the hardened state to the softened state by application of energy, holds the recess of the wafer by the holding portion, and supports the outer peripheral portion of the wafer by the support member in the hardened state.
In addition, the support member is preferably a member that changes to a liquid state when heated in a cured state.
In the holding table according to one aspect of the present invention, a support member whose hardness is changed by energy application is used as a member for supporting the outer peripheral portion of the wafer. Further, by deforming the support member in accordance with the depth of the recess of the wafer, it is possible to support a plurality of types of wafers having different depths of the recess. Thus, a holding table capable of easily holding a wafer having a recess is realized.
In the holding table according to the aspect of the present invention, the recessed portion of the wafer is held by the holding portion, and the outer peripheral portion of the wafer is supported by the support member. Thus, the wafer is reliably held by the holding table, and the wafer is less likely to be displaced.
Drawings
Fig. 1 is a perspective view showing a cutting device.
Fig. 2 (a) is a perspective view showing the front side of the wafer, and fig. 2 (B) is a perspective view showing the back side of the wafer.
Fig. 3 (a) is a perspective view showing a wafer supported by a frame, and fig. 3 (B) is a cross-sectional view showing the wafer supported by the frame.
Fig. 4 (a) is a perspective view showing the holding table, and fig. 4 (B) is an enlarged sectional view showing a part of the holding table.
Fig. 5 is a sectional view showing a holding table that holds a wafer.
Fig. 6 is an enlarged cross-sectional view showing a part of the wafer held by the holding table.
Description of the reference symbols
11: a wafer; 11 a: front side (1 st side); 11 b: a back surface (2 nd surface); 13: dividing a predetermined line (street); 15: a device; 17 a: a device region; 17 b: a peripheral residual region; 19: a recess; 19 a: a bottom surface; 19 b: side faces (inner walls); 21: a peripheral portion; 23: a belt; 25: a frame; 25 a: an opening; 2: a cutting device; 4: a base station; 4a, 4b, 4 c: an opening; 6: a cartridge loading table (cartridge lifter); 8: a cartridge; 10: a moving unit (moving mechanism); 12: a dustproof drip-proof cover; 14: moving the working table; 16: a holding table (chuck table); 16 a: a holding surface; 18: a clamp; 20: a support structure; 22: a moving unit (moving mechanism); 24: a guide rail; 26: moving the plate; 28: a ball screw; 30: a guide rail; 32: moving the plate; 34: a ball screw; 36: a pulse motor; 38: a processing unit (cutting unit); 40: a housing; 42: a cutting tool; 44: a shooting unit (camera); 46: a cleaning unit; 48: a holding table (rotating table); 50: a clamp; 52: a nozzle; 60: a base (base and frame); 60 a: an upper surface; 60 b: a flow path; 62: a holding section; 62 a: an upper surface; 62 b: a recess (groove); 64: a holding member; 64 a: an upper surface; 66: a groove; 66a, 66 b: side faces (inner walls); 68: a support member; 70: an attraction source; 72: an energy imparting unit.
Detailed Description
Hereinafter, an embodiment of one embodiment of the present invention will be described with reference to the drawings. First, a configuration example of a machining device capable of mounting a holding table according to the present embodiment will be described. Fig. 1 is a perspective view showing a cutting device 2 for cutting a workpiece. In fig. 1, the X-axis direction (the machining feed direction, the 1 st horizontal direction, the front-rear direction) and the Y-axis direction (the indexing feed direction, the 2 nd horizontal direction, the left-right direction) are perpendicular to each other. The Z-axis direction (vertical direction, and height direction) is a direction perpendicular to the X-axis direction and the Y-axis direction.
The cutting device 2 includes a base 4 that supports or houses each component constituting the cutting device 2. A rectangular opening 4a is provided at a front corner of the base 4, and a cartridge table (cartridge lifter) 6 is provided inside the opening 4 a. A lifting mechanism (not shown) is connected to the cassette mounting table 6, and the lifting mechanism lifts and lowers the cassette mounting table 6 in the Z-axis direction.
A cassette 8 for accommodating a plurality of workpieces to be processed by the cutting apparatus 2 is placed on the upper surface of the cassette mounting table 6. In fig. 1, the outline of the cartridge 8 is shown by a two-dot chain line. For example, a disk-shaped wafer 11 is accommodated as a workpiece in the cassette 8.
Fig. 2 (a) is a perspective view showing the front side of the wafer 11, and fig. 2 (B) is a perspective view showing the back side of the wafer 11. The wafer 11 is a disk-shaped substrate made of a semiconductor such as silicon, for example, and has a front surface (1 st surface) 11a and a back surface (2 nd surface) 11b which are substantially parallel to each other.
The wafer 11 is divided into a plurality of rectangular regions by a plurality of lines to divide (streets) 13 arranged in a grid shape so as to intersect each other. Further, devices 15 such as ICs (Integrated circuits), LSIs (Large Scale Integration), LEDs (Light Emitting diodes), MEMS (Micro Electro Mechanical Systems), and the like are formed in the plurality of regions divided by the planned dividing lines 13.
The wafer 11 has a substantially circular device region 17a in which a plurality of devices 15 are formed and a ring-shaped outer peripheral residual region 17b surrounding the device region 17a on the front surface 11a side. The outer peripheral surplus region 17b corresponds to an annular region having a predetermined width (for example, about 2 mm) including the outer peripheral edge of the front surface 11 a. In fig. 2 (a), the boundary of the device region 17a and the outer peripheral residual region 17b is shown by a two-dot chain line.
The material, shape, structure, size, and the like of the wafer 11 are not limited. For example, the wafer 11 may be a substrate made of a semiconductor other than silicon (GaAs, InP, GaN, SiC, or the like), glass, ceramic, resin, metal, or the like. In addition, the kind, number, shape, structure, size, arrangement, and the like of the devices 15 are not limited.
The wafer 11 is divided into a lattice shape along the lines to divide 13, thereby manufacturing a plurality of device chips each having a device 15. In addition, when the wafer 11 is divided after the thinning process is performed on the wafer 11, a thinned device chip is obtained.
For example, a grinding device is used for thinning the wafer 11. The grinding apparatus includes a holding table (chuck table) for holding the wafer 11 and a grinding unit on which a grinding wheel having a plurality of grinding wheels is mounted. The wafer 11 is thinned by grinding the back surface 11b side of the wafer 11 by bringing the grinding wheel into contact with the back surface 11b side of the wafer 11 while holding the wafer 11 by the holding table and rotating the holding table and the grinding wheel, respectively.
Here, if the entire back surface 11b side of the wafer 11 is ground, the entire wafer 11 is thinned, the rigidity of the wafer 11 is lowered, and the wafer 11 is easily broken during subsequent processing of the wafer 11 (such as transportation, processing, and cleaning of the wafer 11). Therefore, the thinning process (grinding process) is preferably performed only on the central portion of the back surface 11b side of the wafer 11.
When only the center portion of the wafer 11 is thinned, a circular recess 19 is formed in the center portion of the back surface 11B of the wafer 11, as shown in fig. 2 (B). Further, the recess 19 is provided at a position corresponding to the device region 17 a. For example, the diameter of the recess 19 is set to be substantially the same as the diameter of the device region 17a, and the recess 19 is formed at a position overlapping the device region 17 a.
The recess 19 has a circular bottom surface 19a substantially parallel to the front surface 11a and the back surface 11b of the wafer 11, and a ring-shaped side surface (inner wall) 19b substantially perpendicular to the bottom surface 19a and connected to the back surface 11b and the bottom surface 19 a. In addition, an outer peripheral portion 21 of the wafer 11, which is not subjected to thinning treatment (grinding), remains around the recess 19, and the outer peripheral portion 21 surrounds the recess 19.
As described above, when only the center portion of the wafer 11 is thinned, the outer peripheral portion 21 of the wafer 11 is maintained in a thick state, and a decrease in rigidity of the wafer 11 is suppressed, so that breakage of the wafer 11 is less likely to occur. That is, the outer peripheral portion 21 of the wafer 11, which is not thinned, functions as a reinforcing portion (reinforcing region) for reinforcing the wafer 11.
The wafer 11 having the concave portions 19 formed thereon is cut along the lines to divide 13 by the cutting device 2 (see fig. 1) and is divided into a plurality of device chips. When the wafer 11 is processed by the cutting device 2, the wafer 11 is first supported by the ring-shaped frame.
Fig. 3 (a) is a perspective view showing the wafer 11 supported by the frame 25, and fig. 3 (B) is a cross-sectional view showing the wafer 11 supported by the frame 25. A tape 23 having a size capable of covering the entire back surface 11b of the wafer 11 is attached to the back surface 11b of the wafer 11. For example, a circular tape 23 having a larger diameter than the wafer 11 is attached so as to cover the back surface 11b side of the wafer 11.
As the tape 23, a flexible film having a circular base material and an adhesive layer (paste layer) provided on the base material can be used. For example, the base material is formed of a resin such as polyolefin, polyvinyl chloride, or polyethylene terephthalate, and the adhesive layer is formed of an epoxy-based, acrylic, or rubber-based adhesive. In addition, an ultraviolet curable resin that cures upon irradiation with ultraviolet light may be used for the adhesive layer.
The tape 23 is attached along the contour of the back surface 11b side of the wafer 11. That is, as shown in fig. 3B, the tape 23 is attached along the bottom surface 19a and the side surface 19B of the recess 19 and the back surface (lower surface) of the outer peripheral portion 21. In fig. 3 (B), although an example is shown in which a slight gap is present between the wafer 11 and the tape 23 at the outer periphery of the bottom surface 19a of the recess 19, the tape 23 may be attached so as to be in close contact with the entire area of the bottom surface 19a and the side surface 19B.
An annular frame 25 made of metal such as SUS (stainless steel) is attached to the outer periphery of the belt 23. A circular opening 25a capable of accommodating the wafer 11 is provided in the center of the frame 25. The wafer 11 is attached to the central portion of the tape 23 exposed inside the opening 25 a. Thereby, the wafer 11 is supported by the frame 25 via the belt 23. The wafer 11 supported by the frame 25 is stored in the cassette 8 (see fig. 1).
A rectangular opening 4b having a longitudinal direction along the X-axis direction is provided in a region of the base 4 located on the side of the opening 4 a. A ball screw type moving unit (moving mechanism) 10 is provided inside the opening 4 b. The upper part of the moving unit 10 is covered by a corrugated dustproof and drip-proof cover 12 and a plate-shaped moving table 14.
A holding table (chuck table) 16 for holding the wafer 11 is provided on the movable table 14. The upper surface of the holding table 16 constitutes a holding surface 16a for holding the wafer 11. The structure of the holding table 16 will be described in detail later (see fig. 4 a). Further, a plurality of jigs 18 for holding and fixing a frame 25 for supporting the wafer 11 are provided around the holding table 16.
The moving unit 10 moves the holding table 16 along the X-axis direction together with the moving table 14. A rotation drive source (not shown) such as a motor is connected to the holding table 16, and the rotation drive source rotates the holding table 16 about a rotation axis substantially parallel to the Z-axis direction.
A support structure 20 is provided in a region of the base 4 adjacent to the opening 4 b. The upper portion of the support structure 20 is disposed along the Y-axis direction so as to overlap the opening 4 b. Further, a ball screw type moving means (moving mechanism) 22 is provided on the front surface side of the upper portion of the support structure 20.
The moving unit 22 has a pair of guide rails 24 fixed to the front surface side of the support structure 20. The pair of guide rails 24 are arranged parallel to each other along the Y-axis direction. The flat plate-like moving plate 26 is attached to the pair of guide rails 24 so as to be slidable in the Y-axis direction along the guide rails 24.
A nut portion (not shown) is provided on the back surface side (rear surface side) of the moving plate 26. A ball screw 28 disposed substantially parallel to the guide rail 24 is screwed into the nut portion. A pulse motor (not shown) is connected to one end of the ball screw 28. When the ball screw 28 is rotated by the pulse motor, the moving plate 26 moves in the Y-axis direction along the guide rail 24.
A pair of guide rails 30 arranged parallel to each other in the Z-axis direction are fixed to the front surface side (front surface side) of the moving plate 26. The flat plate-like moving plate 32 is attached to the pair of guide rails 30 so as to be slidable in the Z-axis direction along the guide rails 30.
A nut portion (not shown) is provided on the back surface side (rear surface side) of the moving plate 32. A ball screw 34 disposed substantially parallel to the guide rail 30 is screwed into the nut portion. A pulse motor 36 is connected to one end of the ball screw 34. When the ball screw 34 is rotated by the pulse motor 36, the moving plate 32 moves in the Z-axis direction along the guide rail 30.
A processing unit (cutting unit) 38 for cutting the wafer 11 is fixed to a lower portion of the moving plate 32. The machining unit 38 has a cylindrical housing 40, and a cylindrical spindle (not shown) disposed along the Y-axis direction is housed in the housing 40. A tip end portion (one end side) of the spindle is exposed outside the housing 40, and a rotation driving source (not shown) such as a motor for rotating the spindle is connected to a base end portion (the other end side) of the spindle.
An annular cutting tool 42 is attached to the tip of the spindle. The cutting tool 42 is a machining tool that cuts the wafer 11 by cutting into the wafer 11, and is formed by fixing abrasive grains made of diamond, cubic Boron Nitride (cBN), or the like with a bonding material. The material of the abrasive grains and the binder, the particle size of the abrasive grains, and the like are not limited, and are appropriately selected according to the material of the wafer 11, the content of the cutting process, and the like.
As the cutting tool 42, for example, a hub type cutting tool (hub tool) is used. The hub cutter is configured by integrating an annular base formed of metal or the like and an annular cutting blade formed along the outer peripheral edge of the base. As the cutting edge of the hub cutter, for example, an electroformed grindstone formed by fixing abrasive grains with a bonding material such as nickel plating is used.
On the other hand, a washer-type cutting tool (washer tool) may be used as the cutting tool 42. The gasketed cutter is an annular cutting edge formed by fixing abrasive grains with a bonding material made of metal, ceramic, resin, or the like.
The cutting tool 42 attached to the machining unit 38 is moved by the moving unit 22. Thereby, the position of the cutting tool 42 in the Y-axis direction and the depth of cut into the wafer 11 are adjusted.
An imaging unit (camera) 44 that images the wafer 11 held by the holding table 16 is provided at a position adjacent to the processing unit 38. The image obtained by imaging the wafer 11 held by the holding table 16 by the imaging unit 44 is used for positioning the wafer 11 and the processing unit 38.
An opening 4c defining a cylindrical cleaning space (cleaning chamber) is provided on the side of the opening 4b opposite to the opening 4 a. A cleaning unit 46 for cleaning the wafer 11 is provided inside the opening 4 c. The cleaning unit 46 has a holding table (rotary table) 48 that holds the wafer 11. A rotation driving source (not shown) such as a motor for rotating the holding table 48 about a rotation axis substantially parallel to the Z-axis direction is connected to the holding table 48. Further, a plurality of jigs 50 for holding and fixing the frame 25 for supporting the wafer 11 are provided around the holding table 48.
A nozzle 52 for supplying a cleaning fluid (for example, a mixed fluid of water and air) to the wafer 11 held by the holding table 48 is disposed above the holding table 48. The wafer 11 is cleaned by supplying a fluid from the nozzle 52 toward the wafer 11 while rotating the holding table 48 holding the wafer 11.
When the wafer 11 is processed by the cutting apparatus 2, first, the wafer 11 stored in the cassette 8 is transported to the holding table 16 by a transport mechanism (not shown), and the wafer 11 is held by the holding table 16. Further, the frame 25 is fixed by a plurality of clamps 18. While supplying a liquid (cutting liquid) such as pure water to the wafer 11, the cutting tool 42 attached to the processing unit 38 is rotated to cut into the wafer 11. Thereby, the wafer 11 is cut.
The processed wafer 11 is conveyed to the cleaning unit 46 by a conveyance mechanism (not shown), and is cleaned by the cleaning unit 46. Then, the wafer 11 is transported by a transport mechanism (not shown) and stored in the cassette 8.
Next, a configuration example of the holding table 16 mounted on the cutting apparatus 2 will be described. Fig. 4 (a) is a perspective view showing the holding table 16. The holding table 16 is a holding table capable of holding the wafer 11 having the recess 19 (see fig. 2B and 3B).
The holding table 16 has a disk-shaped base (base, frame) 60 made of glass, ceramic, metal, resin, or the like. A columnar holding portion 62 protruding upward from the upper surface 60a of the base 60 is provided at the center of the base 60. The holding portion 62 may be integrated with the base 60, or may be formed separately from the base 60 and fixed to the upper surface 60a side of the base 60.
A columnar recess (groove) 62b is provided in the center of the holding portion 62 on the upper surface 62a side, and a disk-shaped holding member 64 is fitted into the recess 62 b. The holding member 64 is formed of a porous material such as porous ceramic, and includes a void (suction passage) therein, which communicates from the upper surface to the lower surface of the holding member 64.
The holding member 64 is connected to a suction source 70 (see fig. 5) such as an injector via a flow path 60b (see fig. 5) provided in the base 60, a valve (not shown), and the like. The upper surface 64a of the holding member 64 constitutes a circular suction surface for sucking the wafer 11. The upper surface 62a of the holding portion 62 and the upper surface 64a of the holding member 64 are arranged on substantially the same plane, and constitute a holding surface 16a for holding the table 16.
An annular groove 66 is provided in an area outside the holding portion 62 on the upper surface 60a side of the base 60. For example, the groove 66 is formed to have a predetermined width along the outer peripheral edge of the holding portion 62 so as to be adjacent to the holding portion 62, and surrounds the holding portion 62.
Fig. 4 (B) is an enlarged sectional view showing a part of the holding table 16. The groove 66 includes an annular side surface (inner wall) 66a located radially inward of the base 60 and an annular side surface (inner wall) 66b located radially outward of the base 60. For example, the side surface 66a and the side surface of the holding portion 62 are formed on substantially the same plane. The side surface 66b is formed in a curved surface shape. Specifically, the side surface 66b is formed in an upwardly convex shape so that the inclination gradually decreases from the bottom of the groove 66 toward the upper surface 60a of the base 60.
A support member 68 for supporting the outer peripheral portion 21 (see fig. 5) of the wafer 11 is provided inside the groove 66. The support member 68 is a member whose hardness is changed by the application of energy. The details of the support member 68 will be described later.
Fig. 5 is a sectional view showing the holding table 16 holding the wafer 11. The holding portion 62 for holding the table 16 is formed in a size that can be inserted into the recess 19 of the wafer 11. For example, the diameter of the holding portion 62 is set smaller than the diameter of the recess 19 of the wafer 11. The groove 66 is provided in a region corresponding to the outer peripheral portion 21 of the wafer 11. For example, the outer diameter of the groove 66 (the diameter of the upper end of the side surface 66 b) is set to be equal to or larger than the diameter of the wafer 11, and the width of the groove 66 is set to be equal to or larger than the width of the outer peripheral portion 21 of the wafer 11. The position of the groove 66 is set so that the outer peripheral portion 21 of the wafer 11 overlaps the groove 66 when the wafer 11 is disposed above the holding table 16.
The wafer 11 is disposed on the holding table 16 such that the back surface 11b side faces the holding surface 16 a. At this time, the wafer 11 is disposed so that the upper surface 62a side of the holding portion 62 is inserted into and fitted into the recess 19. Thereby, the bottom surface 19a of the recess 19 of the wafer 11 is supported by the holding surface 16a via the tape 23. When the negative pressure of the suction source 70 is applied to the upper surface 64a of the holding member 64, the bottom surface 19a of the recess 19 of the wafer 11 is sucked and held by the holding portion 62 via the tape 23.
The lower surface side of the outer peripheral portion 21 of the wafer 11 is inserted into the groove 66 provided in the susceptor 60. As a result, the tape 23 attached to the lower surface side of the outer peripheral portion 21 of the wafer 11 is in contact with the support member 68 filled in the groove 66.
Fig. 6 is an enlarged cross-sectional view showing a part of the wafer 11 held by the holding table 16. Here, the support member 68 is a member that is hardened by application of predetermined energy and changes from a softened state (non-hardened state) to a hardened state.
For example, the support member 68 is formed of: the substance is in a state of being flowable and freely deformable before the application of energy, and when a predetermined amount of energy is applied, the substance is solidified and fixed in shape. Specifically, the support member 68 is formed of a material that is hardened by irradiation with electromagnetic waves (visible light, infrared light, ultraviolet light, microwaves, and the like).
For example, as the support member 68, an ultraviolet curable resin that is cured by irradiation of ultraviolet rays, a visible light curable resin that is cured by irradiation of visible light, a thermosetting resin that is cured by heating, or the like can be used. Further, as the support member 68, a substance (anti-Pd) that is hardened by applying ultrasonic waves can be used2L2Etc.).
When the wafer 11 is placed on the holding table 16, the support member 68 is maintained in an uncured state (uncured state, softened state), that is, a state deformable by application of an external force. When the outer peripheral portion 21 of the wafer 11 is inserted into the groove 66, the support member 68 deforms in accordance with the position (height) of the outer peripheral portion 21 of the wafer 11. Thus, the tape 23 attached to the outer peripheral portion 21 of the wafer 11 is embedded in the support member 68.
As shown in fig. 6, when the wafer 11 is held by the holding table 16, a part of the tape 23 comes into contact with the side surface 66b of the groove 66. Therefore, the side surface 66b is preferably formed in a curved surface shape. This prevents the belt 23 from being locally forced, and thus the belt 23 is less likely to be damaged.
Subsequently, predetermined energy is applied to the support member 68 to harden the support member 68. For example, an energy applying unit 72 that applies predetermined energy to the support member 68 is provided below the holding table 16. When energy is applied to the support member 68 by the energy application means 72, the support member 68 is hardened and cured in a state of being in contact with the belt 23.
The type of energy applied from the energy applying unit 72 to the support member 68 is set according to the properties of the support member 68. For example, when the support member 68 is made of an ultraviolet curable resin, a light source (lamp) for irradiating ultraviolet rays is used as the energy applying means 72, and the support member 68 is irradiated with ultraviolet rays from the energy applying means 72 through the base 60. When the support member 68 is made of a visible light curable resin, a light source (lamp) for emitting visible light is used as the energy applying means 72, and the support member 68 is irradiated with visible light from the energy applying means 72 through the base 60.
When the support member 68 is made of a thermosetting resin, a heater such as an infrared lamp is used as the energy applying means 72, and the support member 68 is heated by the energy applying means 72. In the case where the support member 68 is hardened by applying ultrasonic waves, an ultrasonic oscillator that emits ultrasonic waves is used as the energy applying means 72, and the support member 68 is irradiated with ultrasonic waves from the energy applying means 72.
When the support member 68 is cured, the outer peripheral portion 21 of the wafer 11 is supported from below by the support member 68 via the tape 23. As a result, the concave portion 19 of the wafer 11 is held by the holding portion 62, and the outer peripheral portion 21 of the wafer 11 is supported by the support member 68 in a hardened state. This ensures that the entire wafer 11 is fixed to the holding table 16.
The position (height) of the outer peripheral portion 21 of the wafer 11 held by the holding table 16 differs depending on the depth of the recess 19 of the wafer 11. Specifically, as the recess 19 of the wafer 11 is deeper, the bottom surface 19a of the recess 19 is positioned closer to the front surface 11a of the wafer 11, and the back surface 11b (lower surface of the outer peripheral portion 21) of the wafer 11 is disposed lower. Therefore, the distance (difference in height) between the lower surface of the outer peripheral portion 21 of the wafer 11 and the bottom surface of the groove 66 differs depending on the depth of the recess 19.
Here, when the support member 68 is used as described above, the support member 68 in the non-hardened state is deformed in accordance with the depth of the concave portion 19 so as to maintain the flat state (undeflected state) of the wafer 11 when the wafer 11 is placed on the holding table 16. When energy is applied to the support member 68, the support member 68 is hardened in a state of being deformed in accordance with the depth of the recess 19, and supports the outer peripheral portion 21 of the wafer 11.
That is, the support member 68 functions as a support member whose thickness can be changed according to the depth of the recess 19 of the wafer 11. Therefore, the holding table 16 can hold a plurality of types of wafers 11 having different depths of the concave portions 19. As a result, the height (projecting amount) of the holding portion 62 does not need to be adjusted in accordance with the depth of the recess 19 of the wafer 11, and the wafer 11 having the recess 19 can be easily held.
The wafer 11 held by the holding table 16 is cut by a cutting tool 42 attached to the processing unit 38 (see fig. 1). The wafer 11 is divided along the lines to divide 13 (see fig. 2 a) by the cutting tool 42, for example, to obtain a plurality of device chips each having a device 15.
When dividing the wafer 11, first, the annular outer peripheral portion 21 is removed from the wafer 11. Specifically, the positions of the holding table 16 and the cutting tool 42 are adjusted so that the cutting tool 42 is disposed directly above the outer peripheral portion of the recess 19 of the wafer 11. Next, the cutting tool 42 is lowered while being rotated, and the cutting tool 42 is cut into the outer peripheral portion of the concave portion 19 of the wafer 11. The amount of lowering of the cutting insert 42 at this time is set so that the lower end of the cutting insert 42 reaches the belt 23.
Then, the holding table 16 is rotated while maintaining the rotation of the cutting tool 42 in a state where the cutting tool 42 is cut into the wafer 11. Thereby, the wafer 11 is cut and cut in a ring shape along the outer peripheral portion of the recess 19. As a result, the annular outer peripheral portion 21 is separated from the wafer 11. The outer peripheral portion 21 separated from the wafer 11 is peeled and removed from the tape 23.
Then, the wafer 11 from which the outer peripheral portion 21 is removed is cut along the lines to divide 13 (see fig. 2 a). Thereby, the thinned central portion of the wafer 11 is divided into a plurality of device chips, and a thinned device chip is obtained.
When the outer peripheral portion 21 of the wafer 11 is removed in advance before the wafer 11 is divided into the plurality of device chips as described above, the cutting tool 42 can be prevented from coming into contact with the outer peripheral portion 21 of the wafer 11 when the wafer 11 is subsequently cut along the lines to divide 13. This enables smooth cutting of the wafer 11.
The support member 68 is preferably a reversible member that changes from a hardened state (non-softened state) to a softened state by performing a predetermined treatment. In this case, when or after the processed wafer 11 is transferred from the holding table 16, the support member 68 can be softened and returned to the state before hardening, and the support member 68 can be used again for supporting the next wafer.
As described above, in the holding table 16 of the present embodiment, the supporting member 68 whose hardness changes by the application of energy is used as a member for supporting the outer peripheral portion 21 of the wafer 11. Further, the support member 68 is deformed in accordance with the depth of the recess 19 of the wafer 11, whereby a plurality of types of wafers 11 having different depths of the recess 19 can be supported. This realizes the holding table 16 capable of easily holding the wafer 11 having the concave portion 19.
In the holding table 16, the concave portion 19 of the wafer 11 is held by the holding portion 62, and the outer peripheral portion 21 of the wafer 11 is supported by the support member 68. This ensures that the wafer 11 is held by the holding table 16, and thus, the wafer 11 is less likely to be misaligned.
In the above-described embodiment, the case where the support member 68 is changed from the softened state (non-hardened state) to the hardened state by the application of energy has been described. However, the support member 68 may be a member that changes from a hardened state (non-softened state) to a softened state by the application of energy.
In this case, when the wafer 11 is held by the holding table 16, the hardened support member 68 is heated by the energy applying unit 72 to soften the support member 68. Then, in a state where the tape 23 attached to the outer peripheral portion 21 of the wafer 11 is in contact with the support member 68, heating of the support member 68 is stopped, and the support member 68 is cooled. Thereby, the support member 68 in the softened state is hardened, and the outer peripheral portion 21 of the wafer 11 is supported by the support member 68 via the belt 23.
For example, thermoplastic resins such as polyethylene, polypropylene, polyvinyl chloride, polystyrene, acrylic, polyacetal, and polytetrafluoroethylene, or waxes may be used as the support member 68. In this case, the support member 68 in a solidified state can be heated to change the support member 68 into a liquid state. Further, by cooling the liquid support member 68, the support member 68 can be solidified.
As the support member 68, an electro-viscous fluid (ER fluid) whose viscosity reversibly changes by application of a voltage may be used. For example, an electrically viscous fluid is produced by dispersing particles made of aluminosilicate or the like in an insulating oil such as silicone oil.
Further, the device for mounting the holding table 16 is not limited. For example, the holding table 16 may be mounted on a processing device (a grinding device, a polishing device, a laser processing device, or the like) or a cleaning device other than the cutting device.
The grinding apparatus has a processing unit (grinding unit) that grinds the wafer 11. The grinding unit has a main shaft, and an annular grinding wheel having a plurality of grinding stones is attached to a tip portion of the main shaft. The wafer 11 is held by a holding table 16 provided in the grinding apparatus, and the grinding wheel is rotated while being brought into contact with the wafer 11, whereby the wafer 11 is ground.
The polishing apparatus includes a processing unit (polishing unit) that polishes the wafer 11. The polishing unit has a spindle, and a disk-shaped polishing pad is attached to a tip of the spindle. The wafer 11 is held by a holding table 16 provided in the polishing apparatus, and the wafer 11 is polished by bringing a polishing pad into contact with the wafer 11 while rotating.
The laser processing apparatus includes a processing unit (laser irradiation unit) that irradiates a laser beam for processing the wafer 11. For example, the laser irradiation unit includes a laser oscillator that pulses a laser beam having a predetermined wavelength and a condenser that condenses the laser beam emitted from the laser oscillator. The wafer 11 is held by a holding table 16 provided in the laser processing apparatus, and laser processing is performed on the wafer 11 by irradiating the wafer with a laser beam from a laser irradiation unit.
The cleaning apparatus has a nozzle or the like that supplies a fluid (pure water or the like) for cleaning the wafer 11. The wafer 11 is held by a holding table 16 provided in the cleaning apparatus, and the wafer 11 is cleaned by supplying a fluid from a nozzle to the wafer 11 while rotating the holding table 16.
In addition, the structure, method, and the like of the above embodiments may be modified and implemented as appropriate without departing from the scope of the object of the present invention.

Claims (2)

1. A holding table for holding a wafer having a recess and an annular outer peripheral portion surrounding the recess,
the holding table has:
a base; and
a holding portion protruding from an upper surface of the susceptor and inserted into the recess of the wafer,
the base has:
an annular groove provided in a region corresponding to the outer peripheral portion of the wafer; and
a support member provided inside the tank and changing from a softened state to a hardened state or from a hardened state to a softened state by application of energy,
the concave portion of the wafer is held by the holding portion, and the outer peripheral portion of the wafer is supported by the support member in a hardened state.
2. Holding table according to claim 1,
the support member is a member that changes to a liquid state when heated in a cured state.
CN202111088163.6A 2020-09-25 2021-09-16 Holding table Pending CN114256127A (en)

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JP2020-160685 2020-09-25

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Publication number Priority date Publication date Assignee Title
JP2007019379A (en) 2005-07-11 2007-01-25 Disco Abrasive Syst Ltd Method for processing wafer
JP4874602B2 (en) 2005-08-26 2012-02-15 株式会社ディスコ Adhesive tape used for wafer processing method and wafer processing method

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