TW202006811A - Ultrasonic horn (welding head) and dividing method of wafer to suppress the occurrence of division residue - Google Patents

Ultrasonic horn (welding head) and dividing method of wafer to suppress the occurrence of division residue Download PDF

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TW202006811A
TW202006811A TW108124121A TW108124121A TW202006811A TW 202006811 A TW202006811 A TW 202006811A TW 108124121 A TW108124121 A TW 108124121A TW 108124121 A TW108124121 A TW 108124121A TW 202006811 A TW202006811 A TW 202006811A
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wafer
ultrasonic
welding head
modified layer
ultrasonic vibration
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TW108124121A
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TWI827631B (en
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邱曉明
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日商迪思科股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/047—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by ultrasonic cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B23K26/388—Trepanning, i.e. boring by moving the beam spot about an axis
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0064—Devices for the automatic drive or the program control of the machines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/463—Mechanical treatment, e.g. grinding, ultrasonic treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices

Abstract

Situation of division residue occurrence can be suppressed while dividing a wafer. In an ultrasonic horn (welding head), a radiation surface takes a point at which ultrasonic vibration is desired to be concentrated as a center, so that a side located at the point is recessed to form a dome shape. Accordingly, the ultrasonic vibration radiated by the radiation surface is concentrated at a point. In addition, a modified layer having weaker strength is formed along a predetermined dividing line of the wafer. Moreover, the ultrasonic horn applies ultrasonic vibration to the upper surface of the wafer with water between the wafer and the horn while moving along the dividing predetermined line. Therefore, all modified layers of the wafer are collectively applied with ultrasonic vibration in the light of each modified layer. Hence, the wafer can be divided well along the modified layer. It can suppress the occurrence of division residue.

Description

超音波焊頭及晶圓的分割方法Ultrasonic welding head and wafer dividing method

發明領域 本發明是有關於一種超音波焊頭(horn)及晶圓的分割方法。Field of invention The invention relates to a method for dividing an ultrasonic horn and a wafer.

發明背景 在專利文獻1中揭示有一種對具備分割預定線的晶圓進行分割的方法。在此方法中，是沿著分割預定線照射對晶圓具有穿透性的脈衝雷射光線，而在晶圓的內部形成改質層。之後，對改質層施加外力，來分割晶圓。 在專利文獻2中，記載有對形成有改質層的晶圓施加外力的方法。在此方法中，是藉由將超音波振動傳達到配置於水槽的晶圓，來分割晶圓。 先前技術文獻 專利文獻Background of the invention Patent Document 1 discloses a method of dividing a wafer having a line to be divided. In this method, pulsed laser light penetrating the wafer is irradiated along the line to be divided, and a modified layer is formed inside the wafer. After that, an external force is applied to the modified layer to divide the wafer. Patent Document 2 describes a method of applying an external force to a wafer on which a modified layer is formed. In this method, the wafer is divided by transmitting ultrasonic vibration to the wafer arranged in the water tank. Prior technical literature Patent Literature

專利文獻1：日本專利特開2002-192367號公報 專利文獻2：日本專利特開2005-135964號公報Patent Document 1: Japanese Patent Laid-Open No. 2002-192367 Patent Document 2: Japanese Patent Laid-Open No. 2005-135964

發明概要 發明欲解決之課題 然而，在專利文獻2的方法中，有未能在全部的分割預定線上將晶圓同時地分割的情形，也就是有產生分割殘留的情形。Summary of the invention Problems to be solved by invention However, in the method of Patent Document 2, there is a case where the wafer cannot be divided simultaneously on all the lines to be divided, that is, a division residue may occur.

本發明中的目的在於：在分割晶圓時，抑制產生分割殘留的情形。 用以解決課題之手段An object of the present invention is to suppress the occurrence of division residue when dividing a wafer. Means to solve the problem

本發明之超音波焊頭(本超音波焊頭)是一種集中超音波振動並將之賦與的超音波焊頭，並具備：振動器，具有幅射面，前述幅射面是以欲集中該超音波振動之一點為中心，使位於該一點之側凹陷而形成為圓頂狀；及殼體，保持該振動器的外周部。The ultrasonic welding head of the present invention (this ultrasonic welding head) is an ultrasonic welding head that concentrates ultrasonic vibration and imparts it, and is provided with: a vibrator, having an radiating surface, and the foregoing radiating surface is to concentrate One point of the ultrasonic vibration is centered, and the side located at the one point is recessed to form a dome shape; and the housing holds the outer peripheral portion of the vibrator.

本發明之晶圓的分割方法(本分割方法)是一種使用了本超音波焊頭的晶圓的分割方法，並具備以下步驟： 搬送及水淹沒步驟，將在內部具有沿著該分割預定線之改質層的該晶圓載置於載置工作台，並使該載置工作台在水槽中淹沒於水中，其中前述改質層是藉由將具有穿透該晶圓之波長的脈衝雷射光線以其聚光點定位在該晶圓的內部的狀態，一邊對該晶圓照射，一邊沿著該晶圓之分割預定線移動而形成；及 分割步驟，藉由沿著淹沒於水中的該晶圓的該改質層，移動已定位於該晶圓的上方的該超音波焊頭，而對該晶圓的上表面依序賦與該超音波振動，而以該改質層為起點來分割該晶圓。 發明效果The wafer division method (this division method) of the present invention is a wafer division method using this ultrasonic welding head, and has the following steps: In the step of transporting and water submerging, the wafer having the modified layer along the predetermined dividing line inside is placed on the mounting table, and the mounting table is submerged in water in the water tank, wherein the aforementioned modified layer By positioning the pulsed laser light having a wavelength penetrating the wafer with its condensing point inside the wafer, while irradiating the wafer, it moves along the planned dividing line of the wafer And formed; and In the dividing step, by moving the ultrasonic welding head positioned above the wafer along the modified layer of the wafer submerged in water, the upper surface of the wafer is sequentially given the super The sound wave vibrates, and the wafer is divided with the modified layer as a starting point. Invention effect

在本超音波焊頭中，振動器具有幅射面，前述幅射面是讓位於欲集中超音波振動的一點之側凹陷而形成為圓頂狀。因此，可以將從振動器所幅射出之超音波振動集中在該一點。In the ultrasonic welding head, the vibrator has an radiating surface, and the radiating surface is recessed on the side where the ultrasonic vibration is to be concentrated to form a dome shape. Therefore, the ultrasonic vibration radiated from the vibrator can be concentrated at that point.

又，在本分割方法中，是沿著晶圓的分割預定線而形成有強度較弱的改質層。並且，本超音波焊頭為一邊沿著晶圓的分割預定線移動，一邊隔著水來對晶圓的上表面依序賦與超音波振動。從而，在本分割方法中，變得可對晶圓之全部的改質層按每個改質層集中地賦與超音波振動。因此，因為變得可沿著改質層良好地分割晶圓，所以可以抑制分割殘留的產生。In addition, in this division method, a weakly modified layer is formed along the planned division line of the wafer. In addition, this ultrasonic welding head sequentially applies ultrasonic vibration to the upper surface of the wafer through water while moving along the planned dividing line of the wafer. Therefore, in this division method, it becomes possible to intensively apply ultrasonic vibration to all the modified layers of the wafer for each modified layer. Therefore, since it becomes possible to divide the wafer well along the modified layer, the occurrence of division residue can be suppressed.

用以實施發明之形態 首先，針對本實施形態之被加工物簡單地進行說明。Forms for carrying out the invention First, the workpiece to be processed in this embodiment will be briefly described.

如圖1所示，本實施形態之被加工物的一例即晶圓1是例如圓板狀的矽基板。於晶圓1的正面2a形成有包含元件4的元件區域5。在元件區域5中，是在藉由格子狀的分割預定線3所區劃出的部分的每一個中形成有元件4。晶圓1的背面2b不具有元件4，且藉由磨削磨石等而被磨削。As shown in FIG. 1, the wafer 1 which is an example of the object to be processed in this embodiment is, for example, a disc-shaped silicon substrate. An element region 5 including elements 4 is formed on the front surface 2 a of the wafer 1. In the element region 5, the element 4 is formed in each of the portions defined by the grid-shaped dividing line 3. The back surface 2b of the wafer 1 does not have the element 4 and is ground by grinding stone or the like.

在本實施形態之分割方法(本分割方法)中，晶圓1是沿著分割預定線3而被分割。藉此，可將晶圓1切斷成複數個各自包含1個元件4的晶片。In the dividing method (this dividing method) of this embodiment, the wafer 1 is divided along the line 3 to be divided. Thereby, the wafer 1 can be cut into a plurality of wafers each including one element 4.

(1)改質層形成步驟 在本分割方法中，首先，是利用周知的技術來實施在晶圓1形成改質層的改質層形成步驟。在改質層的形成中，是例如準備照射脈衝雷射光線的裝置。來自此裝置的脈衝雷射光線具有穿透晶圓1的波長(例如紅外線區域)。讓此脈衝雷射光線以其聚光點定位於晶圓1的內部的狀態，一邊對晶圓1照射，一邊沿著晶圓1的分割預定線3移動。藉此，可在晶圓1的內部，如圖2所示地形成沿著分割預定線3的改質層31。(1) Steps for forming modified layer In this division method, first, a modified layer forming step of forming a modified layer on the wafer 1 is performed using a well-known technique. In the formation of the modified layer, for example, an apparatus prepared to irradiate pulsed laser light. The pulsed laser light from this device has a wavelength that penetrates the wafer 1 (eg, infrared region). This pulsed laser beam is moved along the planned dividing line 3 of the wafer 1 while irradiating the wafer 1 with its converging point positioned inside the wafer 1. As a result, the modified layer 31 along the line to be divided 3 can be formed inside the wafer 1 as shown in FIG. 2.

再者，在本實施形態中，是將脈衝雷射光線一邊改變其聚光深度，一邊對1條分割預定線3照射例如3次。藉此，沿著1條分割預定線3形成排列在晶圓1的厚度方向上的3條改質層31。In addition, in this embodiment, pulsed laser beams are irradiated, for example, three times to one line to be divided 3 while changing the concentration depth. With this, three modified layers 31 arranged in the thickness direction of the wafer 1 are formed along one planned dividing line 3.

(2)搬送及水淹沒步驟 接著，實施藉由搬送裝置將具有改質層31的晶圓1載置於載置工作台的搬送步驟、及使載置工作台在水槽中淹沒於水中的水淹沒步驟。在此，針對在本分割方法中所使用的搬送裝置、載置工作台及水槽的構成進行說明。(2) Transportation and flooding steps Next, a transfer step of placing the wafer 1 having the modified layer 31 on the mounting table by the transfer device, and a water submerging step of submerging the mounting table in the water in the water tank. Here, the configurations of the conveying device, the mounting table, and the water tank used in this division method will be described.

如圖2所示，本分割方法之搬送裝置11具備有：吸引保持晶圓1的搬送墊21、搬送墊21的吸引源17、支撐搬送墊21的支臂部15、支臂部15的驅動源13、及連結搬送墊21與支臂部15的連結構件19。As shown in FIG. 2, the transfer device 11 of the present division method includes a transfer pad 21 that attracts and holds the wafer 1, a suction source 17 for the transfer pad 21, an arm portion 15 that supports the transfer pad 21, and a drive for the arm portion 15 The source 13 and the connecting member 19 connecting the transfer pad 21 and the arm portion 15.

驅動源13是支臂部15的驅動源且是支撐構件。在支臂部15中，是將其基端側連結於驅動源13，且將前端側透過連結構件19來保持搬送墊21。支臂部15是將驅動源13作為旋繞軸而可在XY平面上旋繞。此外，支臂部15是將驅動源13作為升降軸而可沿著Z軸朝上下方向升降。The drive source 13 is a drive source of the arm portion 15 and is a support member. In the arm portion 15, the base end side is connected to the drive source 13, and the front end side is held through the connecting member 19 to hold the transfer pad 21. The arm portion 15 can be rotated on the XY plane using the drive source 13 as a rotation axis. In addition, the arm portion 15 can be moved up and down in the vertical direction along the Z axis using the drive source 13 as a lifting axis.

搬送墊21具備有吸引保持晶圓1的吸附部23、及包覆吸附部23的框體25。框體25是連接於連結構件19，且支撐著吸附部23。吸附部23是由多孔陶瓷等的多孔質材料所構成，且是形成為圓板狀。The transfer pad 21 includes a suction portion 23 that attracts and holds the wafer 1 and a frame 25 that covers the suction portion 23. The frame body 25 is connected to the coupling member 19 and supports the suction portion 23. The adsorption portion 23 is made of a porous material such as porous ceramics, and is formed in a disc shape.

吸引源17包含真空產生裝置及壓縮機等，且具有朝Z方向延伸的連通路171。連通路171是貫通於支臂部15、連結構件19及框體25，而到達到吸附部23。從而，吸引源17可透過此連通路171而連接於吸附部23。藉由吸引源17透過連通路171來對吸附部23進行吸引，而在吸附部23的表面產生負壓。吸附部23是藉由此負壓來吸引保持晶圓1。The suction source 17 includes a vacuum generating device, a compressor, and the like, and has a communication path 171 extending in the Z direction. The communication path 171 passes through the arm portion 15, the coupling member 19 and the frame body 25, and reaches the suction portion 23. Therefore, the suction source 17 can be connected to the suction portion 23 through this communication path 171. The suction source 17 sucks the suction portion 23 through the communication path 171, and a negative pressure is generated on the surface of the suction portion 23. The suction unit 23 sucks and holds the wafer 1 by this negative pressure.

又，如圖2所示，載置工作台41具有平行於XY平面的載置面，且被配置及固定於水槽51的底部。又，載置工作台41具有朝Z軸方向延伸的旋轉軸(未圖示)，且可將此旋轉軸作為中心而在XY平面內旋轉。載置工作台41是將此旋轉軸作為中心，而可在水槽51內旋轉例如至少90°。As shown in FIG. 2, the placing table 41 has a placing surface parallel to the XY plane, and is arranged and fixed to the bottom of the water tank 51. In addition, the mounting table 41 has a rotation axis (not shown) extending in the Z-axis direction, and can rotate in the XY plane using this rotation axis as a center. The placing table 41 has the rotation axis as a center, and can be rotated in the water tank 51 by, for example, at least 90°.

水槽51具備有配置在下表面中央的螺帽部52。水槽51是隔著可在X軸方向上移動的滑動構件55而受到X軸方向移動機構53所支撐。X軸方向移動機構53是用於使水槽51在X軸方向(垂直於紙面的方向)上移動的構件。X軸方向移動機構53具備有平行於X軸地配置的滾珠螺桿59、及使滾珠螺桿59旋轉的馬達57。滾珠螺桿59是卡合於水槽51的螺帽部52。從而，藉由以馬達57的驅動力來使滾珠螺桿59旋轉，而使水槽51透過螺帽部52接受移動力而沿著X軸方向移動。The water tank 51 includes a nut portion 52 arranged at the center of the lower surface. The water tank 51 is supported by the X-axis direction moving mechanism 53 via a sliding member 55 that can move in the X-axis direction. The X-axis direction moving mechanism 53 is a member for moving the water tank 51 in the X-axis direction (direction perpendicular to the paper surface). The X-axis direction moving mechanism 53 includes a ball screw 59 arranged parallel to the X axis, and a motor 57 that rotates the ball screw 59. The ball screw 59 is a nut portion 52 engaged with the water tank 51. Therefore, by rotating the ball screw 59 with the driving force of the motor 57, the water tank 51 receives the moving force through the nut portion 52 and moves in the X-axis direction.

針對使用了具有此構成之搬送裝置11及載置工作台41的本分割方法之搬送步驟及水淹沒步驟進行說明。首先，在晶圓1的正面2a貼附用於保護元件4的保護膠帶T。之後，藉由利用來自驅動源13之驅動力使支臂部15在XY平面內旋繞，來將搬送墊21配置於已載置於規定的位置之晶圓1的背面2b側的上方。並且，藉由沿著Z方向降下支臂部15，來使搬送墊21接觸於晶圓1的背面2b。此外，藉由使吸引源17動作，而藉由搬送墊21的吸附部23來吸引保持晶圓1。The conveying step and the water submerging step of the present dividing method using the conveying device 11 and the mounting table 41 having this configuration will be described. First, the protective tape T for protecting the element 4 is attached to the front surface 2a of the wafer 1. After that, by using the driving force from the driving source 13 to rotate the arm portion 15 in the XY plane, the transfer pad 21 is arranged above the back surface 2b side of the wafer 1 that has been placed at a predetermined position. Then, by lowering the arm portion 15 in the Z direction, the transfer pad 21 is brought into contact with the back surface 2b of the wafer 1. In addition, by operating the suction source 17, the suction portion 23 of the transfer pad 21 sucks and holds the wafer 1.

在此狀態下，藉由旋繞及升降支臂部15，而將晶圓1載置於水槽51內的載置工作台41上。並且，藉由周知的方法，將晶圓1固定於載置工作台41。之後，將晶圓1在XY平面內的位置調整成使晶圓1之分割預定線3的方向為沿著X軸方向及Y軸方向。此調整是藉由載置工作台41之在XY平面內的旋轉來實施。In this state, the wafer 1 is placed on the placing table 41 in the water tank 51 by winding and raising and lowering the arm portion 15. Furthermore, the wafer 1 is fixed to the mounting table 41 by a well-known method. Thereafter, the position of the wafer 1 in the XY plane is adjusted so that the direction of the planned dividing line 3 of the wafer 1 is along the X-axis direction and the Y-axis direction. This adjustment is performed by the rotation of the mounting table 41 in the XY plane.

接著，藉由從未圖示之水供給源對水槽51內供給水，以藉由規定量的水W將水槽51內充滿。藉此，讓水槽51內之保持於載置工作台41的晶圓1淹沒於水中。Next, by supplying water into the water tank 51 from a water supply source not shown, the water tank 51 is filled with a predetermined amount of water W. Thereby, the wafer 1 held in the mounting table 41 in the water tank 51 is submerged in water.

之後，停止來自吸引源17之吸引力，將搬送墊21從晶圓1斷開，並使其沿著Z方向朝上方移動。到此，完成搬送及水淹沒步驟。After that, the attraction from the attraction source 17 is stopped, and the transfer pad 21 is disconnected from the wafer 1 and moved upward in the Z direction. At this point, the steps of transportation and flooding are completed.

(3)分割步驟 接著，實施使用超音波振動來將淹沒於水中的晶圓1分割成晶片的分割步驟。在分割步驟中，是如圖3所示，在淹沒於水中的晶圓1上配置超音波分割裝置61。並且，藉由沿著晶圓1之分割預定線3來移動已定位在晶圓1的上方的超音波焊頭69，且依序對晶圓1的上表面的分割預定線3賦與超音波振動，而以改質層31為起點來分割晶圓1。(3) Splitting steps Next, a division step of dividing the submerged wafer 1 into wafers using ultrasonic vibration is performed. In the dividing step, as shown in FIG. 3, the ultrasonic dividing device 61 is arranged on the wafer 1 submerged in water. Then, the ultrasonic welding head 69 positioned above the wafer 1 is moved along the planned dividing line 3 of the wafer 1, and ultrasonic waves are sequentially applied to the planned dividing line 3 on the upper surface of the wafer 1 With vibration, the wafer 1 is divided with the modified layer 31 as a starting point.

以下，針對在本分割方法中所使用之超音波分割裝置61的構成進行說明。 如圖3所示，超音波分割裝置61具備有輸出高頻電壓的高頻電源供給部63、幅射超音波振動的超音波焊頭69、用於使超音波焊頭69沿著Y軸方向移動的Y軸方向移動機構65、用於使超音波焊頭69升降的升降機構67、及卡合於Y軸方向移動機構65與升降機構67的螺帽部66。Hereinafter, the configuration of the ultrasonic dividing device 61 used in the present dividing method will be described. As shown in FIG. 3, the ultrasonic splitting device 61 includes a high-frequency power supply unit 63 that outputs a high-frequency voltage, an ultrasonic welding head 69 that radiates ultrasonic vibration, and an ultrasonic welding head 69 that extends along the Y-axis direction A moving Y-axis direction moving mechanism 65, a lifting mechanism 67 for raising and lowering the ultrasonic welding head 69, and a nut portion 66 engaged with the Y-axis direction moving mechanism 65 and the lifting mechanism 67.

高頻電源供給部63是對超音波焊頭69輸出高頻電壓。Y軸方向移動機構65是用於使超音波焊頭69沿著Y軸方向移動的構件，且包含有朝Y軸方向延伸的滾珠螺桿。螺帽部66是卡合於Y軸方向移動機構65的滾珠螺桿，且伴隨於此滾珠螺桿的旋轉而沿著Y軸方向移動。The high-frequency power supply unit 63 outputs a high-frequency voltage to the ultrasonic welding head 69. The Y-axis direction moving mechanism 65 is a member for moving the ultrasonic welding head 69 in the Y-axis direction, and includes a ball screw extending in the Y-axis direction. The nut portion 66 is a ball screw that is engaged with the Y-axis direction moving mechanism 65, and moves along the Y-axis direction as the ball screw rotates.

升降機構67的下端保持有超音波焊頭69。升降機構67的上端是以可沿著Z軸方向升降的方式保持於螺帽部66。從而，升降機構67可與超音波焊頭69一起沿著Z軸方向升降。The ultrasonic welding head 69 is held at the lower end of the lifting mechanism 67. The upper end of the elevating mechanism 67 is held by the nut portion 66 so as to be capable of elevating in the Z-axis direction. Therefore, the lifting mechanism 67 can be raised and lowered in the Z-axis direction together with the ultrasonic welding head 69.

接著，針對超音波焊頭69進行說明。如圖3所示，超音波焊頭69包含有幅射超音波振動的超音波振動器73、及保持超音波振動器73的外周部的殼體71。Next, the ultrasonic horn 69 will be described. As shown in FIG. 3, the ultrasonic welding head 69 includes an ultrasonic vibrator 73 that radiates ultrasonic vibration, and a case 71 that holds the outer peripheral portion of the ultrasonic vibrator 73.

超音波振動器73具備有連接於高頻電源供給部63的一次振動器75、及鄰接於一次振動器75的超音波振動板77。一次振動器75是構成為接受來自高頻電源供給部63的1MHz~3MHz的高頻電壓而振動。超音波振動板77是配置成鄰接於一次振動器75，且具有幅射超音波振動的幅射面79。超音波振動板77是藉由與一次振動器75的振動共振而從幅射面79隔著水W來幅射超音波振動。在此，幅射面79是形成為圓頂形狀，以讓從幅射面79所幅射出的超音波振動在距離幅射面79相當於規定距離的位置聚焦。從而，從幅射面79幅射的超音波振動會集中於焦點。也就是說，超音波振動器73的其中一面即幅射面79，是以欲集中超音波振動之一點即焦點為中心，使位於該一點之側凹陷而形成為圓頂狀。The ultrasonic vibrator 73 includes a primary vibrator 75 connected to the high-frequency power supply unit 63 and an ultrasonic vibrating plate 77 adjacent to the primary vibrator 75. The primary vibrator 75 is configured to receive a high-frequency voltage of 1 MHz to 3 MHz from the high-frequency power supply unit 63 and vibrate. The ultrasonic vibration plate 77 is arranged adjacent to the primary vibrator 75 and has a radiation surface 79 that radiates ultrasonic vibration. The ultrasonic vibration plate 77 radiates ultrasonic vibration through the water W from the radiation surface 79 by resonating with the vibration of the primary vibrator 75. Here, the radiation surface 79 is formed in a dome shape so that the ultrasonic vibration radiated from the radiation surface 79 is focused at a position corresponding to a predetermined distance from the radiation surface 79. Therefore, the ultrasonic vibration radiated from the radiation surface 79 is concentrated on the focal point. That is to say, one of the surfaces of the ultrasonic vibrator 73, that is, the radiation surface 79, is centered on the focal point, which is a point where ultrasonic vibration is to be concentrated, and is recessed on the side of the point to form a dome shape.

又，超音波分割裝置61具有可從晶圓1之背面2b穿透於晶圓1而拍攝晶圓1之正面2a的圖未示之校準相機。此校準相機是例如紅外線相機。藉由使用此校準相機，可從晶圓1的背面2b側拍攝改質層31。In addition, the ultrasonic dividing device 61 has a calibration camera (not shown) that can penetrate the wafer 1 from the back surface 2b of the wafer 1 to capture the front surface 2a of the wafer 1. This calibration camera is, for example, an infrared camera. By using this calibration camera, the modified layer 31 can be photographed from the back surface 2b side of the wafer 1.

針對使用了具有這種構成的超音波分割裝置61的本分割方法之分割步驟來進行說明。在實施水淹沒步驟後，在原樣保持於載置工作台41且已淹沒於水中的晶圓1的背面2b上配置超音波分割裝置61。The division procedure of this division method using the ultrasonic division device 61 having such a configuration will be described. After the water submergence step is performed, the ultrasonic division device 61 is arranged on the back surface 2b of the wafer 1 that is held on the mounting table 41 and submerged in water.

接著，使用X軸方向移動機構53及Y軸方向移動機構65，實施在XY平面內之超音波焊頭69相對於晶圓1的相對位置的控制。藉由此控制，可將超音波焊頭69中的超音波振動器73的焦點(幅射面79的焦點)配置於晶圓1上之朝X方向延伸的第1條分割預定線3的上方。再者，在此控制中是使用上述之校準相機。Next, using the X-axis direction moving mechanism 53 and the Y-axis direction moving mechanism 65, the relative position of the ultrasonic horn 69 relative to the wafer 1 in the XY plane is controlled. By this control, the focal point of the ultrasonic vibrator 73 (the focal point of the radiation surface 79) in the ultrasonic welding head 69 can be arranged above the first planned dividing line 3 extending in the X direction on the wafer 1 . In addition, the above-mentioned calibration camera is used for this control.

接著，控制升降機構67來控制超音波焊頭69的Z軸方向的位置。藉由此控制，讓超音波振動器73的焦點的高度成為晶圓1的背面2b的高度。藉此，可將超音波振動器73的焦點配置到晶圓1的背面2b中的分割預定線3上。在此狀態下，驅動高頻電源供給部63來對超音波振動器73輸出高頻電壓，而由超音波振動器73幅射超音波振動。藉此，可隔著水槽51內的水W，朝向沿著晶圓1之分割預定線3而形成的改質層31的正上方的晶圓1的背面2b集中地幅射超音波振動。又，亦可將超音波振動器73的焦點定位於改質層31。Next, the lifting mechanism 67 is controlled to control the position of the ultrasonic welding head 69 in the Z-axis direction. By this control, the height of the focal point of the ultrasonic vibrator 73 becomes the height of the back surface 2b of the wafer 1. Thereby, the focal point of the ultrasonic vibrator 73 can be arranged on the planned dividing line 3 in the back surface 2b of the wafer 1. In this state, the high-frequency power supply unit 63 is driven to output a high-frequency voltage to the ultrasonic vibrator 73, and the ultrasonic vibrator 73 radiates ultrasonic vibration. Thereby, it is possible to radiate ultrasonic vibration intensively toward the back surface 2 b of the wafer 1 directly above the modified layer 31 formed along the planned dividing line 3 of the wafer 1 through the water W in the water tank 51. In addition, the focal point of the ultrasonic vibrator 73 may be positioned on the modified layer 31.

此外，一邊從超音波焊頭69的超音波振動器73朝向沿著分割預定線3而形成的改質層31幅射超音波振動，一邊使超音波焊頭69沿著朝X軸方向延伸的分割預定線3來對晶圓1相對地移動。也就是說，驅動保持著水槽51的X軸方向移動機構53的馬達57，而使載置工作台41連同水槽51在X軸方向上移動。對1條分割預定線3的整個區域幅射超音波振動後，使用Y軸方向移動機構65及升降機構67，來將超音波振動器73的焦點對準於朝X軸方向延伸之Y軸方向的位置不同的別條分割預定線3上，並沿著此分割預定線3使超音波焊頭69與水槽51在X軸方向上相對地移動。In addition, while radiating ultrasonic vibration from the ultrasonic vibrator 73 of the ultrasonic horn 69 toward the modified layer 31 formed along the planned dividing line 3, the ultrasonic horn 69 extends in the X-axis direction The planned dividing line 3 relatively moves the wafer 1. That is, the motor 57 holding the X-axis direction moving mechanism 53 of the water tank 51 is driven to move the placement table 41 together with the water tank 51 in the X-axis direction. After radiating ultrasonic vibration to the entire area of one planned dividing line 3, the Y-axis direction moving mechanism 65 and the lifting mechanism 67 are used to align the focus of the ultrasonic vibrator 73 in the Y-axis direction extending toward the X-axis direction On the other planned dividing line 3 at different positions, and along this planned dividing line 3, the ultrasonic welding head 69 and the water tank 51 are relatively moved in the X-axis direction.

如此進行，而對晶圓1中的平行於1個方向的全部的分割預定線3的整個區域幅射超音波振動。之後，使載置工作台41旋轉90°，並對垂直於已幅射過超音波振動之分割預定線3的分割預定線3同樣地幅射超音波振動。In this way, ultrasonic vibration is radiated to the entire area of all the lines to be divided 3 parallel to one direction in the wafer 1. After that, the mounting table 41 is rotated by 90°, and ultrasonic vibration is radiated in the same manner to the planned division line 3 perpendicular to the planned division line 3 that has been radiated with ultrasonic vibration.

如此進行，而對晶圓1上的全部的分割預定線3的整個區域賦與超音波振動。在晶圓1中，是藉由對形成分割預定線3之面的相反面之晶圓1的背面2b施加由超音波振動所形成的外力，而將沿著分割預定線3所形成之強度較弱的改質層31作為起點來產生裂縫。因此，可將晶圓1沿著此分割預定線3分割。藉此，可將晶圓1小片化，而生成複數個晶片。 上述是使水槽51在X軸方向上移動並使其沿著朝X軸方向延伸之分割預定線進行分割，但亦可使超音波焊頭69在Y軸方向上移動而使其對朝Y軸方向延伸之分割預定線進行分割。In this way, ultrasonic vibration is applied to the entire area of all the lines to be divided 3 on the wafer 1. In the wafer 1, the external force formed by the ultrasonic vibration is applied to the back surface 2b of the wafer 1 opposite to the surface forming the line 3 to divide the intensity formed along the line 3 The weak modified layer 31 serves as a starting point to generate cracks. Therefore, the wafer 1 can be divided along this planned dividing line 3. Thereby, the wafer 1 can be made into small pieces, and a plurality of wafers can be generated. The above is to move the water tank 51 in the X-axis direction and divide it along the planned dividing line extending in the X-axis direction, but it is also possible to move the ultrasonic welding head 69 in the Y-axis direction so that it faces the Y-axis The dividing line extending in the direction is divided.

如以上，在本分割方法中所使用之超音波焊頭69中，超音波振動器73的其中一面即幅射面79，是以欲集中超音波振動之一點即焦點作為中心，使位於該一點之側凹陷而形成為圓頂狀。藉此，可以將從超音波振動器73所幅射出之超音波振動集中於一點。As described above, in the ultrasonic welding head 69 used in this division method, one of the surfaces of the ultrasonic vibrator 73, that is, the radiation surface 79, is centered at the focal point, which is the point where the ultrasonic vibration is to be concentrated, to be located at that point The side is recessed and formed into a dome shape. Thereby, the ultrasonic vibration radiated from the ultrasonic vibrator 73 can be concentrated at one point.

又，在本分割方法中，是沿著晶圓1的分割預定線3而形成有強度較弱的改質層31。並且，超音波焊頭69為一邊沿著晶圓1的分割預定線3移動，一邊隔著水W來對晶圓1的上表面依序賦與超音波振動。從而，在本分割方法中，變得可對晶圓1的全部的改質層31，按每個改質層31來集中地賦與超音波振動。因此，因為變得可沿著改質層31良好地分割晶圓1，而可以抑制分割殘留的產生。In addition, in this division method, the modified layer 31 having a weak strength is formed along the planned division line 3 of the wafer 1. In addition, the ultrasonic horn 69 moves ultrasonically to the upper surface of the wafer 1 sequentially through water W while moving along the planned dividing line 3 of the wafer 1. Therefore, in this division method, it is possible to intensively apply ultrasonic vibration to all the modified layers 31 of the wafer 1 for each modified layer 31. Therefore, since it becomes possible to divide the wafer 1 along the modified layer 31 well, it is possible to suppress the occurrence of division residue.

再者，搬送裝置11及超音波分割裝置61亦可構成為：以將其任一個配置於水槽51內的晶圓1上的方式來相對於水槽51旋繞驅動。或者，亦可將水槽51平面地(例如直線地)移動成：於在XY平面方向上平行地配置的搬送裝置11及超音波分割裝置61的任一個的下部配置晶圓1。In addition, the conveyance device 11 and the ultrasonic division device 61 may be configured to be driven to rotate with respect to the water tank 51 so as to arrange either of them on the wafer 1 in the water tank 51. Alternatively, the water tank 51 may be moved in a plane (for example, linearly) such that the wafer 1 is arranged under any of the transport device 11 and the ultrasonic dividing device 61 arranged in parallel in the XY plane direction.

又，在本實施形態中，是在搬送裝置11將晶圓1載置於載置工作台41後，對水槽51供給水，之後，將搬送裝置11從晶圓1斷開。然而，並不限定於此，亦可在搬送裝置11之搬送墊21將晶圓1載置於載置工作台41後從晶圓1斷開，並於之後對水槽51供給水。In the present embodiment, after the transfer device 11 places the wafer 1 on the mounting table 41, water is supplied to the water tank 51, and then the transfer device 11 is disconnected from the wafer 1. However, it is not limited to this, and the wafer 1 may be disconnected from the wafer 1 after the wafer 1 is placed on the mounting table 41 by the transfer pad 21 of the transfer device 11, and then water may be supplied to the water tank 51.

又，在本實施形態中，是在事先配置在水槽51內之載置工作台41上，藉由搬送裝置11載置晶圓1，並將晶圓1相對於載置工作台41進行校準後，對水槽51內供給水。然而，並不限定於此，亦可將晶圓1載置在已蓄積有水之水槽51內的載置工作台41。或者，亦可在配置於水槽51外之載置工作台41上，藉由搬送裝置11載置晶圓1，之後，將保持有晶圓1之載置工作台41配置到已蓄積有水之水槽51中。In the present embodiment, the wafer 1 is placed on the mounting table 41 arranged in the water tank 51 in advance by the transfer device 11, and the wafer 1 is calibrated with respect to the mounting table 41. To supply water into the water tank 51. However, it is not limited to this, and the wafer 1 may be placed on the placement table 41 in the water tank 51 in which water has been stored. Alternatively, the wafer 1 may be placed on the placing table 41 arranged outside the water tank 51 by the transfer device 11, and then the placing table 41 holding the wafer 1 may be arranged The sink 51.

1‧‧‧晶圓 2a‧‧‧正面 2b‧‧‧背面 3‧‧‧分割預定線 4‧‧‧元件 5‧‧‧元件區域 11‧‧‧搬送裝置 13‧‧‧驅動源 15‧‧‧支臂部 17‧‧‧吸引源 171‧‧‧連通路 19‧‧‧連結構件 21‧‧‧搬送墊 23‧‧‧吸附部 25‧‧‧框體 31‧‧‧改質層 41‧‧‧載置工作台 51‧‧‧水槽 52‧‧‧螺帽部 53‧‧‧X軸方向移動機構 55‧‧‧滑動構件 57‧‧‧馬達 59‧‧‧滾珠螺桿 61‧‧‧超音波分割裝置 63‧‧‧高頻電源供給部 65‧‧‧Y軸方向移動機構 66‧‧‧螺帽部 67‧‧‧升降機構 69‧‧‧超音波焊頭 71‧‧‧殼體 73‧‧‧超音波振動器 75‧‧‧一次振動器 77‧‧‧超音波振動板 79‧‧‧幅射面 T‧‧‧保護膠帶 W‧‧‧水 X、Y、Z‧‧‧方向1‧‧‧ Wafer 2a‧‧‧Front 2b‧‧‧Back 3‧‧‧ scheduled line 4‧‧‧ Components 5‧‧‧Component area 11‧‧‧Conveying device 13‧‧‧Drive source 15‧‧‧arm 17‧‧‧Attraction 171‧‧‧ Connected Road 19‧‧‧Connecting member 21‧‧‧Carrying pad 23‧‧‧Adsorption Department 25‧‧‧frame 31‧‧‧ Modified layer 41‧‧‧ Placement table 51‧‧‧Sink 52‧‧‧ Nut 53‧‧‧X-axis moving mechanism 55‧‧‧Sliding member 57‧‧‧Motor 59‧‧‧ball screw 61‧‧‧Ultrasonic splitting device 63‧‧‧High-frequency power supply unit 65‧‧‧ Y-axis moving mechanism 66‧‧‧Nut 67‧‧‧ Lifting mechanism 69‧‧‧Ultrasonic welding head 71‧‧‧Housing 73‧‧‧Ultrasonic vibrator 75‧‧‧primary vibrator 77‧‧‧ Ultrasonic vibration plate 79‧‧‧radiation T‧‧‧Protective tape W‧‧‧Water X, Y, Z‧‧‧ direction

圖1是顯示本實施形態的被加工物之一例即晶圓的立體圖。 圖2是顯示本實施形態之分割方法的搬送步驟及水淹沒步驟的說明圖。 圖3是顯示本實施形態之分割方法的分割步驟的說明圖。FIG. 1 is a perspective view showing a wafer which is an example of a workpiece to be processed in this embodiment. FIG. 2 is an explanatory diagram showing the transfer step and the water submergence step of the dividing method of this embodiment. FIG. 3 is an explanatory diagram showing the dividing procedure of the dividing method of this embodiment.

1‧‧‧晶圓 1‧‧‧ Wafer

2a‧‧‧正面 2a‧‧‧Front

2b‧‧‧背面 2b‧‧‧Back

3‧‧‧分割預定線 3‧‧‧ scheduled line

4‧‧‧元件 4‧‧‧ Components

171‧‧‧連通路 171‧‧‧ Connected Road

31‧‧‧改質層 31‧‧‧ Modified layer

41‧‧‧載置工作台 41‧‧‧ Placement table

51‧‧‧水槽 51‧‧‧Sink

52‧‧‧螺帽部 52‧‧‧ Nut

53‧‧‧X軸方向移動機構 53‧‧‧X-axis moving mechanism

55‧‧‧滑動構件 55‧‧‧Sliding member

57‧‧‧馬達 57‧‧‧Motor

59‧‧‧滾珠螺桿 59‧‧‧ball screw

61‧‧‧超音波分割裝置 61‧‧‧Ultrasonic splitting device

63‧‧‧高頻電源供給部 63‧‧‧High-frequency power supply unit

65‧‧‧Y軸方向移動機構 65‧‧‧ Y-axis moving mechanism

66‧‧‧螺帽部 66‧‧‧Nut

67‧‧‧升降機構 67‧‧‧ Lifting mechanism

69‧‧‧超音波焊頭 69‧‧‧Ultrasonic welding head

71‧‧‧殼體 71‧‧‧Housing

73‧‧‧超音波振動器 73‧‧‧Ultrasonic vibrator

75‧‧‧一次振動器 75‧‧‧primary vibrator

77‧‧‧超音波振動板 77‧‧‧ Ultrasonic vibration plate

79‧‧‧幅射面 79‧‧‧radiation

T‧‧‧保護膠帶 T‧‧‧Protective tape

W‧‧‧水 W‧‧‧Water

X、Y、Z‧‧‧方向 X, Y, Z‧‧‧ direction

Claims (2)

一種超音波焊頭，集中超音波振動並將之賦與，前述超音波焊頭具備： 振動器，具有幅射面，前述幅射面是以欲集中該超音波振動之一點為中心，使位於該一點之側凹陷而形成為圓頂狀；及 殼體，保持該振動器的外周部。An ultrasonic welding head that concentrates and imparts ultrasonic vibration. The foregoing ultrasonic welding head has: The vibrator has an radiating surface, and the aforementioned radiating surface is centered at a point where the ultrasonic vibration is to be concentrated, and is recessed at the side of the point to form a dome shape; and The housing holds the outer periphery of the vibrator. 一種晶圓的分割方法，是使用如請求項1之超音波焊頭的晶圓的分割方法，並具備以下步驟： 搬送及水淹沒步驟，將在內部具有沿著該分割預定線之改質層的該晶圓載置於載置工作台，並使該載置工作台在水槽中淹沒於水中，其中前述改質層是藉由將具有穿透該晶圓之波長的脈衝雷射光線以其聚光點定位在該晶圓的內部的狀態，一邊對該晶圓照射，一邊沿著該晶圓之分割預定線移動而形成；及 分割步驟，藉由沿著已淹沒於水中的該晶圓的該改質層，移動已定位於該晶圓的上方的該超音波焊頭，而對該晶圓的上表面依序賦與該超音波振動，而以該改質層為起點來分割該晶圓。A wafer dividing method is a wafer dividing method using the ultrasonic welding head according to claim 1, and has the following steps: In the step of transporting and water submerging, the wafer having the modified layer along the predetermined dividing line inside is placed on the mounting table, and the mounting table is submerged in water in the water tank, wherein the aforementioned modified layer By positioning the pulsed laser light having a wavelength penetrating the wafer with its condensing point inside the wafer, while irradiating the wafer, it moves along the planned dividing line of the wafer And formed; and In the step of dividing, by moving the ultrasonic welding head positioned above the wafer along the modified layer of the wafer submerged in water, the upper surface of the wafer is sequentially assigned to the Ultrasonic vibration, and use the modified layer as a starting point to split the wafer.
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