JP7031030B2 - P型炭化珪素へのオーミックコンタクトの形成方法 - Google Patents
P型炭化珪素へのオーミックコンタクトの形成方法 Download PDFInfo
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 131
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 118
- 238000000034 method Methods 0.000 title claims description 61
- 150000002500 ions Chemical class 0.000 claims description 104
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 41
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- 239000010936 titanium Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 16
- 238000007654 immersion Methods 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
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- 238000005538 encapsulation Methods 0.000 claims description 13
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- SQBBHCOIQXKPHL-UHFFFAOYSA-N tributylalumane Chemical compound CCCC[Al](CCCC)CCCC SQBBHCOIQXKPHL-UHFFFAOYSA-N 0.000 claims description 3
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- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical compound [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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Description
本発明は、p型炭化珪素層にオーミックコンタクトを形成する方法に関し、特に、アニールを行わずにp型炭化珪素層へのオーミックコンタクトを形成することができる方法に関する。
炭化珪素(SiC)は、高出力、高温、高周波の電子デバイスにとっては、魅力的な化学的、物理的、電子的な特性を有することが知られている。特に、4H-ポリタイプの炭化珪素(4H-SiC)および6H-ポリタイプの炭化珪素(6H-SiC)は、シリコン(Si)と比較して、より高い絶縁破壊電界強度、より高い熱伝導率、より低い真性キャリア濃度およびより高い飽和ドリフト速度を有し、4H-SiCおよび6H-SiCをパワー半導体デバイスに好適な材料とする。
本発明の上記および他の目的、利点および特徴、ならびにそれが達成される方法は、例示的な実施形態を示す添付の図面と併せて以下の本発明の詳細な説明を考慮することによって、より容易に明らかになるであろう。
図1A~図1Dは、例示的な実施形態による、p型炭化珪素層へのオーミックコンタクトを形成する方法のステップを示す。図1Aに示す第1のステップにおいて、第1の主面18と、第1の主面の反対側の第2の主面19とを有するp型炭化珪素層1が提供される。p型炭化珪素層1はバルク結晶および/またはエピタキシャル層を含むことができ、任意のポリタイプ、例えば4H-SiCまたは6H-SiCとすることができる。p型炭化珪素層1は、例えばアルミニウムおよび/またはホウ素でドープされる。p型炭化珪素層1のp型ドープは、例えばイオン注入、成長チャンバ内にp型ドーパント源気体を含むことによる成長中における共ドープ、ドープされていない炭化珪素層上へのドーパントの堆積(例えば、スパッタリング、化学気相成長、蒸発などによる)に続いてそのドープされていない炭化珪素層内にドーパントを拡散させるためにアニールを行うなどの、公知の方法のいずれかによって行われ得る。p型炭化珪素層1のピークドーピング濃度は、例えば1・1014cm-3~1・1018cm-3の範囲とすることができる。
2 (PIII装置の)封入チャンバ
3 (ターゲットを取り囲む)プラズマ
7 電圧源
8 接地
11 注入層
12 n-型炭化珪素層
13 n型炭化珪素層
15 ターゲット
18 第1の主面
19 第2の主面
21 金属層
22 カソード層
23 アノード層
26 プラズマ生成器
31 第1のイオン
32 第2のイオン
81 電線
82 電線
91 ステージ
92 支持アーム
100 p-i-nダイオード
Claims (15)
- p型炭化珪素層へのオーミックコンタクトを形成するための方法であって、
第1の主面(18)と前記第1の主面(18)の反対側の第2の主面(19)とを有するp型炭化珪素層(1)を提供するステップと、
前記p型炭化珪素層(1)に前記第1の主面(18)から第1のイオン(31)および第2のイオン(32)を注入して、前記第1の主面(18)に注入層(11)を形成するステップとを含み、
前記p型炭化珪素層(1)に前記イオンを注入するステップは、プラズマ浸漬イオン注入により行われることを特徴とし、前記p型炭化珪素層(1)は前記第1のイオン(31)および前記第2のイオン(32)を含むプラズマ(3)に浸漬され、前記第1のイオン(31)はイオン化されたアルミニウム原子であり、前記第2のイオン(32)は前記第1のイオン(31)とは異なる、p型炭化珪素層へのオーミックコンタクトを形成するための方法。 - 前記p型炭化珪素層(1)に前記イオンを注入するステップは、
封入チャンバ(2)内に前記p型炭化珪素層(1)を位置決めするステップと、
アルミニウムを含む原料から、前記p型炭化珪素層(1)が浸漬される、前記第1のイオン(31)および前記第2のイオン(32)を含む前記プラズマ(3)を生成するステップと、
次いで、前記プラズマ(3)を生成するステップとは独立して、前記p型炭化珪素層(1)と接地電位(8)との間に負の電圧を印加して、前記プラズマ(3)中の前記第1のイオン(31)および前記第2のイオン(32)を、前記p型炭化珪素層(1)を取り囲む前記プラズマ(3)から前記p型炭化珪素層(1)に向かって、前記第1のイオン(31)および前記第2のイオン(32)を前記p型炭化珪素層(1)に注入するのに十分なイオンエネルギーで加速するステップとを含む、請求項1に記載の方法。 - 前記原料は、アルミニウムおよび炭素を含む気体である、請求項2に記載の方法。
- 前記気体は、トリメチルアルミニウム、トリエチルアルミニウム、トリ-1-ブチルアルミニウムおよびトリメチル(トリ-sec-ブトキシ)アルミニウムのうちの少なくとも1つを含む、請求項3に記載の方法。
- 前記第2のイオン(32)は、炭素および水素のうちの少なくとも1つを含み、前記プラズマ(3)中の炭素および水素のうちの少なくとも1つの濃度は、前記プラズマ(3)中のアルミニウムの濃度と同じであるかまたはそれより高い、請求項1~4のいずれか1項に記載の方法。
- 前記プラズマ(3)は窒素および塩素を含み、前記プラズマ中の窒素の濃度は前記プラズマ(3)中のアルミニウムの濃度の10%以下であり、前記プラズマ(3)中の塩素の濃度は前記プラズマ中のアルミニウムの濃度未満である、請求項5に記載の方法。
- 前記加速されたイオンは10keV未満のエネルギーで前記第1の主面(18)に衝突する、請求項2~6のいずれか1項に記載の方法。
- 前記注入層(11)は、少なくとも1・1018cm-3の最小アルミニウム濃度を有するように形成される、請求項1~7のいずれか1項に記載の方法。
- 前記イオンを注入するステップの後に、前記第1の主面(18)上に、前記注入層(11)と接触して、金属層(21)を形成するステップをさらに含む、請求項1~8のいずれか1項に記載の方法。
- 前記イオンを注入するステップ中およびその後ならびに前記金属層(21)を形成するステップの前に、前記p型炭化珪素層(1)の温度を1300℃未満に保つ、請求項9に記載の方法。
- 前記金属層(21)は、アルミニウム、チタンおよびニッケルがない、請求項9または10に記載の方法。
- 前記金属層(21)はアルミニウム、チタンおよびニッケルを含み、前記金属層(21)中のアルミニウム濃度は1・1013cm-3未満であり、前記金属層(21)中のチタン濃度は2・1011cm-3未満であり、前記金属層(21)中のニッケル濃度は1・1011cm-3未満である、請求項9または10に記載の方法。
- 前記イオンを注入するステップの間、前記p型炭化珪素層(1)の温度は500℃未満に保たれ、前記金属層(21)を形成するステップの後、前記p型炭化珪素層(1)の温度は800℃未満に保たれる、請求項10~12のいずれか1項に記載の方法。
- 請求項1~13のいずれか1項に記載の方法を含むパワー半導体デバイスの製造方法。
- 前記パワー半導体デバイスは、p-i-nダイオード、ショットキーダイオード、接合障壁ショットキーダイオード、絶縁ゲートバイポーラトランジスタ、バイポーラ接合トランジスタ、またはサイリスタである、請求項14に記載の製造方法。
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