JP7029633B2 - イオン源、イオン注入装置 - Google Patents

イオン源、イオン注入装置 Download PDF

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Publication number
JP7029633B2
JP7029633B2 JP2018021919A JP2018021919A JP7029633B2 JP 7029633 B2 JP7029633 B2 JP 7029633B2 JP 2018021919 A JP2018021919 A JP 2018021919A JP 2018021919 A JP2018021919 A JP 2018021919A JP 7029633 B2 JP7029633 B2 JP 7029633B2
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JP
Japan
Prior art keywords
shield member
ion source
plasma generation
ion
ribbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018021919A
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English (en)
Japanese (ja)
Other versions
JP2019139950A (ja
JP2019139950A5 (enExample
Inventor
徹朗 山元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Ion Equipment Co Ltd
Original Assignee
Nissin Ion Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Ion Equipment Co Ltd filed Critical Nissin Ion Equipment Co Ltd
Priority to JP2018021919A priority Critical patent/JP7029633B2/ja
Priority to CN201811472876.0A priority patent/CN110137063A/zh
Priority to KR1020180155814A priority patent/KR20190096791A/ko
Priority to US16/224,910 priority patent/US10573490B2/en
Publication of JP2019139950A publication Critical patent/JP2019139950A/ja
Publication of JP2019139950A5 publication Critical patent/JP2019139950A5/ja
Application granted granted Critical
Publication of JP7029633B2 publication Critical patent/JP7029633B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H01J37/165—Means associated with the vessel for preventing the generation of or for shielding unwanted radiation, e.g. X-rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/083—Beam forming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/083—Beam forming
    • H01J2237/0835—Variable cross-section or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24542—Beam profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2018021919A 2018-02-09 2018-02-09 イオン源、イオン注入装置 Active JP7029633B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018021919A JP7029633B2 (ja) 2018-02-09 2018-02-09 イオン源、イオン注入装置
CN201811472876.0A CN110137063A (zh) 2018-02-09 2018-12-04 离子源和离子注入装置
KR1020180155814A KR20190096791A (ko) 2018-02-09 2018-12-06 이온원, 이온 주입 장치
US16/224,910 US10573490B2 (en) 2018-02-09 2018-12-19 Ion source and ion implantation apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018021919A JP7029633B2 (ja) 2018-02-09 2018-02-09 イオン源、イオン注入装置

Publications (3)

Publication Number Publication Date
JP2019139950A JP2019139950A (ja) 2019-08-22
JP2019139950A5 JP2019139950A5 (enExample) 2021-02-25
JP7029633B2 true JP7029633B2 (ja) 2022-03-04

Family

ID=67568374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018021919A Active JP7029633B2 (ja) 2018-02-09 2018-02-09 イオン源、イオン注入装置

Country Status (4)

Country Link
US (1) US10573490B2 (enExample)
JP (1) JP7029633B2 (enExample)
KR (1) KR20190096791A (enExample)
CN (1) CN110137063A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP1671542S (enExample) 2019-12-06 2020-11-02

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100084582A1 (en) 2008-10-03 2010-04-08 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling beam current uniformity in an ion implanter
JP2011253775A (ja) 2010-06-04 2011-12-15 Nissin Ion Equipment Co Ltd イオン注入装置
JP2013041703A (ja) 2011-08-12 2013-02-28 Sumitomo Heavy Ind Ltd ラインプラズマ発生装置
JP2018501626A (ja) 2015-01-09 2018-01-18 マイヤー・ブルガー・（ジャーマニー）・アクチエンゲゼルシャフト 担体発生空間から電荷担体を抽出する装置及びその装置の動作方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7078714B2 (en) 2004-05-14 2006-07-18 Nissin Ion Equipment Co., Ltd. Ion implanting apparatus
JP4875400B2 (ja) 2005-05-06 2012-02-15 アドバンスト イオン ビーム テクノロジー インク リボンイオンビーム用高アスペクト比、高質量分解能アナライザマグネット及びシステム
US9734982B1 (en) 2016-05-24 2017-08-15 Nissin Ion Equipment Co., Ltd. Beam current density distribution adjustment device and ion implanter

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100084582A1 (en) 2008-10-03 2010-04-08 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling beam current uniformity in an ion implanter
JP2011253775A (ja) 2010-06-04 2011-12-15 Nissin Ion Equipment Co Ltd イオン注入装置
JP2013041703A (ja) 2011-08-12 2013-02-28 Sumitomo Heavy Ind Ltd ラインプラズマ発生装置
JP2018501626A (ja) 2015-01-09 2018-01-18 マイヤー・ブルガー・（ジャーマニー）・アクチエンゲゼルシャフト 担体発生空間から電荷担体を抽出する装置及びその装置の動作方法

Also Published As

Publication number Publication date
KR20190096791A (ko) 2019-08-20
JP2019139950A (ja) 2019-08-22
US20190326089A1 (en) 2019-10-24
CN110137063A (zh) 2019-08-16
US10573490B2 (en) 2020-02-25

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