KR20190096791A - 이온원, 이온 주입 장치 - Google Patents

이온원, 이온 주입 장치 Download PDF

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Publication number
KR20190096791A
KR20190096791A KR1020180155814A KR20180155814A KR20190096791A KR 20190096791 A KR20190096791 A KR 20190096791A KR 1020180155814 A KR1020180155814 A KR 1020180155814A KR 20180155814 A KR20180155814 A KR 20180155814A KR 20190096791 A KR20190096791 A KR 20190096791A
Authority
KR
South Korea
Prior art keywords
shield member
ion
ion source
plasma generation
ribbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020180155814A
Other languages
English (en)
Korean (ko)
Inventor
데츠로 야마모토
Original Assignee
닛신 이온기기 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 닛신 이온기기 가부시기가이샤 filed Critical 닛신 이온기기 가부시기가이샤
Publication of KR20190096791A publication Critical patent/KR20190096791A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H01J37/165—Means associated with the vessel for preventing the generation of or for shielding unwanted radiation, e.g. X-rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/083—Beam forming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/083—Beam forming
    • H01J2237/0835—Variable cross-section or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24542—Beam profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
KR1020180155814A 2018-02-09 2018-12-06 이온원, 이온 주입 장치 Withdrawn KR20190096791A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2018-021919 2018-02-09
JP2018021919A JP7029633B2 (ja) 2018-02-09 2018-02-09 イオン源、イオン注入装置

Publications (1)

Publication Number Publication Date
KR20190096791A true KR20190096791A (ko) 2019-08-20

Family

ID=67568374

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180155814A Withdrawn KR20190096791A (ko) 2018-02-09 2018-12-06 이온원, 이온 주입 장치

Country Status (4)

Country Link
US (1) US10573490B2 (enExample)
JP (1) JP7029633B2 (enExample)
KR (1) KR20190096791A (enExample)
CN (1) CN110137063A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP1671542S (enExample) 2019-12-06 2020-11-02

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006313750A (ja) 2005-05-06 2006-11-16 Advanced Ion Beam Technology Inc リボンイオンビーム用高アスペクト比、高質量分解能アナライザマグネット及びシステム

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7078714B2 (en) 2004-05-14 2006-07-18 Nissin Ion Equipment Co., Ltd. Ion implanting apparatus
US8003956B2 (en) * 2008-10-03 2011-08-23 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling beam current uniformity in an ion implanter
JP5041260B2 (ja) * 2010-06-04 2012-10-03 日新イオン機器株式会社 イオン注入装置
JP2013041703A (ja) * 2011-08-12 2013-02-28 Sumitomo Heavy Ind Ltd ラインプラズマ発生装置
EP3043370A1 (de) * 2015-01-09 2016-07-13 Meyer Burger (Germany) AG Vorrichtung zur Extraktion von elektrischen Ladungsträgern aus einem Ladungsträgererzeugungsraum sowie ein Verfahren zum Betreiben einer solchen Vorrichtung
US9734982B1 (en) 2016-05-24 2017-08-15 Nissin Ion Equipment Co., Ltd. Beam current density distribution adjustment device and ion implanter

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006313750A (ja) 2005-05-06 2006-11-16 Advanced Ion Beam Technology Inc リボンイオンビーム用高アスペクト比、高質量分解能アナライザマグネット及びシステム

Also Published As

Publication number Publication date
US20190326089A1 (en) 2019-10-24
US10573490B2 (en) 2020-02-25
JP7029633B2 (ja) 2022-03-04
JP2019139950A (ja) 2019-08-22
CN110137063A (zh) 2019-08-16

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20181206

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination