JP7027175B2 - 半導体装置および機器 - Google Patents

半導体装置および機器 Download PDF

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Publication number
JP7027175B2
JP7027175B2 JP2018004913A JP2018004913A JP7027175B2 JP 7027175 B2 JP7027175 B2 JP 7027175B2 JP 2018004913 A JP2018004913 A JP 2018004913A JP 2018004913 A JP2018004913 A JP 2018004913A JP 7027175 B2 JP7027175 B2 JP 7027175B2
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Prior art keywords
potential
semiconductor region
semiconductor
supply unit
signal
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JP2018004913A
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Japanese (ja)
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JP2019125907A (ja
JP2019125907A5 (https=
Inventor
知弥 笹子
和昭 田代
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2018004913A priority Critical patent/JP7027175B2/ja
Priority to US16/241,251 priority patent/US10734422B2/en
Publication of JP2019125907A publication Critical patent/JP2019125907A/ja
Publication of JP2019125907A5 publication Critical patent/JP2019125907A5/ja
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2018004913A 2018-01-16 2018-01-16 半導体装置および機器 Active JP7027175B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018004913A JP7027175B2 (ja) 2018-01-16 2018-01-16 半導体装置および機器
US16/241,251 US10734422B2 (en) 2018-01-16 2019-01-07 Semiconductor apparatus having a reset transistor for resetting a potential in a semiconductor region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018004913A JP7027175B2 (ja) 2018-01-16 2018-01-16 半導体装置および機器

Publications (3)

Publication Number Publication Date
JP2019125907A JP2019125907A (ja) 2019-07-25
JP2019125907A5 JP2019125907A5 (https=) 2021-02-18
JP7027175B2 true JP7027175B2 (ja) 2022-03-01

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JP2018004913A Active JP7027175B2 (ja) 2018-01-16 2018-01-16 半導体装置および機器

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US (1) US10734422B2 (https=)
JP (1) JP7027175B2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI846699B (zh) * 2018-06-15 2024-07-01 日商索尼股份有限公司 固體攝像元件、固體攝像裝置、電子機器及固體攝像元件之製造方法
JP7668464B2 (ja) 2019-09-26 2025-04-25 パナソニックＩｐマネジメント株式会社 撮像装置
JP7527806B2 (ja) * 2020-02-19 2024-08-05 キヤノン株式会社 光電変換装置、撮像システム、移動体
US11849237B1 (en) * 2022-07-26 2023-12-19 Pixart Imaging Inc. Pixel circuit adopting optically sensitive material with suppressed dark current

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170359537A1 (en) 2014-12-11 2017-12-14 Sony Semiconductor Solutions Corporation Imaging apparatus, drive method, and electronic apparatus

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001332714A (ja) 2000-05-22 2001-11-30 Canon Inc 固体撮像装置
JP4003549B2 (ja) 2001-06-28 2007-11-07 日本ビクター株式会社 固体撮像装置
JP4718169B2 (ja) 2004-12-17 2011-07-06 オムロンオートモーティブエレクトロニクス株式会社 Ｃｍｏｓ撮像デバイス回路
WO2011058684A1 (ja) 2009-11-12 2011-05-19 パナソニック株式会社 固体撮像装置
JP2016051813A (ja) 2014-08-29 2016-04-11 キヤノン株式会社 半導体装置の製造方法、半導体装置、撮像装置および撮像装置の製造方法
JP6740230B2 (ja) * 2015-07-31 2020-08-12 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170359537A1 (en) 2014-12-11 2017-12-14 Sony Semiconductor Solutions Corporation Imaging apparatus, drive method, and electronic apparatus

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Publication number Publication date
JP2019125907A (ja) 2019-07-25
US10734422B2 (en) 2020-08-04
US20190221594A1 (en) 2019-07-18

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