JP7018702B2 - Film forming equipment and film forming method - Google Patents

Description

The present invention relates to a film forming apparatus and a film forming method.

Conventionally, a film forming apparatus and a film forming method using a high-density plasma generated by using an electron cyclotron resonance (hereinafter, also referred to as ECR) are known (see Patent Document 1). ). Such a film forming apparatus and such a film forming method are referred to as an ECR plasma film forming apparatus and an ECR plasma forming method.

The ECR plasma film forming apparatus of Patent Document 1 (FIG. 5) includes a sputtering target 43 and ECR plasma supply units 21 to 33. In this ECR plasma film forming apparatus, in addition to the high-density plasma generated by using ECR, plasma is also generated in the vicinity of the sputtering target 43. Ions contained in the plasma generated in the vicinity of the sputtering target 43 collide with the target, and the target constituent elements are released. The released target constituent elements adhere to the film-forming substrate to form a film. Further, in this ECR plasma film forming apparatus, ion of an element contained in the high-density plasma generated by ECR is also supplied to the film forming substrate. When the element contained in the high-density plasma generated by ECR is a reactive element (reactive gas), the film formed on the film-forming substrate becomes a film of a compound of the target constituent element and the reactive element. .. When the element contained in the high-density plasma generated by ECR is an inert element (inert gas), the film formed on the film-forming substrate becomes the film of the target constituent element.

Japanese Unexamined Patent Publication No. 2005-281726

By the way, it is desirable that the ECR film forming apparatus and the ECR film forming method have a high degree of freedom to meet various demands. For example, it is desirable to have a degree of freedom to cope with changes in the tolerance of the deviation of the film thickness of the film to be formed. However, Patent Document 1 does not describe a method or structure for responding to various requirements, and the ECR film forming apparatus and ECR film forming method of Patent Document 1 cannot be said to have a high degree of freedom.

Further, it is desirable that the structure of the ECR film forming apparatus is a simple structure. However, in the ECR film forming apparatus of Patent Document 1, the microwave waveguide 30 is branched into two, and two microwave introduction windows 32 are required. Therefore, the structure of the ECR film forming apparatus of Patent Document 1 cannot be said to be a simple structure.

An object of the present invention is to provide an ECR film forming apparatus and an ECR film forming method having a high degree of freedom and a simple structure.

In the present invention, a sample chamber, a sample table arranged in the sample chamber and on which a film-forming substrate can be arranged, and a first target material arranged in the sample chamber and containing the first element are arranged. It has a possible first target material arranging part and a first sputtering plasma generating part for generating sputtering plasma, and the ions of the spattering plasma are made to collide with the first target material to cause the first element. A first spatter control that controls the supply amount of the first element particles in the first sputter portion and the first sputter portion that supplies the particles of the first element to the film forming substrate by scattering the particles. A plasma generation chamber in which a plasma generation gas is supplied and a high-density plasma of the plasma generation gas is generated by utilizing electron cyclotron resonance, and is connected to the sample chamber via a plasma supply port. A plasma wave waveguide that is connected to the plasma generation chamber via a plasma wave introduction window arranged at a position facing the plasma supply port and that introduces microwaves into the plasma generation chamber. A plasma supply unit that supplies high-density plasma of the plasma generation gas generated in the plasma generation chamber to the film forming substrate, and a high-density plasma of the plasma generation gas in the plasma supply unit. A plasma control unit for controlling the supply amount is provided, the first spatter control unit controls the supply amount of the particles of the first element, and the plasma control unit controls the supply amount of high-density plasma of the plasma generation gas. The control of is related to the film forming apparatus which is performed independently.

Further, the first sputtering portion generates a first sputtering magnetic field for performing magnetron sputtering and a first sputtering portion diverging magnetic field which is a diverging magnetic field formed between the film forming substrate. 1 It has a magnetic field generation unit for sputtering, and the plasma supply unit is a plasma supply unit which is a divergent magnetic field formed between a magnetic field for electron cyclotron resonance for generating electron cyclotron resonance and a substrate for film formation. It has a magnetic field generation section for plasma supply that generates a divergent magnetic field, and the direction of the divergent magnetic field of the first spatter section and the direction of the divergent magnetic field of the plasma supply section are both toward the film forming substrate or both. The direction may be opposite to the direction toward the film forming substrate.

Further, the pressure in the sample chamber may be substantially uniform.

Further, the supply direction of the high-density plasma of the plasma generation gas by the plasma supply unit may be inclined with respect to the normal line of the film forming substrate.

The first target material arranging portion moves substantially parallel to the normal line of the film forming substrate, whereby one or both of the distance and the angle between the film forming substrate and the first target material. May be changeable.

The first target material arranging portion moves substantially perpendicular to the normal line of the film forming substrate or moves substantially at an angle to determine the distance and angle between the film forming substrate and the first target material. Either one or both may be changeable.

A second target material placement unit that is placed in the sample chamber and can place a second target material that contains the first element or a second element different from the first element, and a second that generates plasma for spatter. The first element or the said It may be provided with a second sputter portion for supplying the particles of the second element to the film forming substrate.

Further, a second sputtering control unit for controlling the supply amount of the particles of the first element or the second element in the second sputtering unit is provided, and the supply amount of the particles of the one element by the first sputtering control unit. And the control of the supply amount of the particles of the first element or the second element by the second sputtering control unit may be performed independently.

Further, the present invention comprises a film forming substrate arranging step of arranging a film forming substrate on a sample table in a sample chamber.
The first target material placement step of arranging the first target material containing the first element in the first target material placement portion, the spatter plasma generation step of generating the sputter plasma, and the ions of the spatter plasma are the first. 1 The first element in the first sputtering step of supplying the particles of the first element to the film forming substrate by colliding with the target material and scattering the particles of the first element. In the first spatter control step that controls the supply amount of the particles of the plasma, the plasma generation gas is supplied to the plasma generation chamber, the microwave is introduced into the plasma generation chamber through the microwave introduction window, and the electron cyclotron resonance is used. By doing so, a high-density plasma of the plasma generation gas is generated, and the high-density plasma of the plasma generation gas generated in the plasma generation chamber is generated from the plasma supply port at a position facing the microwave introduction window. The first plasma supply step in the plasma supply step includes a plasma supply step for supplying the plasma substrate and a plasma supply control step for controlling the supply amount of high-density plasma of the plasma generation gas in the plasma supply step. The control of the supply amount of the particles of the element and the control of the supply amount of the high-density plasma of the plasma generation gas in the plasma supply control step are independently performed, and the film-forming substrate contains the first element. Alternatively, the present invention relates to a film forming method for forming a film of a compound of the first element and an element contained in a plasma generation gas.

Further, a first sputtering magnetic field generation step of generating a first sputtering magnetic field for performing magnetron sputtering and a first sputtering portion diverging magnetic field which is a diverging magnetic field formed between the film forming substrate. , A magnetic field for electron cyclotron resonance for generating electronic cyclotron resonance, and a magnetic field generation step for plasma supply for generating a divergent magnetic field of a plasma supply unit, which is a divergent magnetic field formed between the film-forming substrate. The direction of the divergent magnetic field of the first sputter portion and the direction of the divergent magnetic field of the plasma supply portion are both in the direction toward the film forming substrate or both in the direction opposite to the direction toward the film forming substrate. You may.

Further, the pressure in the charge chamber may be kept substantially uniform.

Further, the plasma supply direction of the plasma generation gas may be inclined with respect to the normal line of the film forming substrate.

Further, by moving the first target material substantially parallel to the normal line of the film forming substrate, one or both of the distance and the angle between the film forming substrate and the first target material can be obtained. It may be provided with a step of changing.

Either the distance and the angle between the film forming substrate and the first target material by moving the first target material substantially perpendicular to the normal line of the film forming substrate or moving the first target material substantially at an angle. It may be provided with a step of changing one or both.

Particles of the second element contained in the second target material by the second target material placement step of arranging the second target material in the second target material placement portion and the sputtering of the second target material with the plasma for sputtering. The second sputtering step of supplying the particles to the film forming substrate and the second sputtering control step of controlling the supply amount of the particles of the second element in the second sputtering step are provided according to the first sputtering control step. The control of the supply amount of the particles of the one element and the control of the supply amount of the particles of the second element by the second sputtering control step may be performed independently.

According to the present invention, it is possible to provide an ECR film forming apparatus and an ECR film forming method having a high degree of freedom and a simple structure.

Is a diagram showing the film forming apparatus 1 of the first embodiment of the present invention. Is a diagram showing the configuration of a magnet for generating a magnetic field for sputtering in the film forming apparatus 1 of the present invention. Is a diagram showing the film forming apparatus 1A of the second embodiment of the present invention. Is a diagram showing the film forming apparatus 1B of the third embodiment of the present invention.

[First Embodiment]
Hereinafter, the first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a diagram showing a film forming apparatus 1 according to the first embodiment of the present invention. FIG. 2 is a diagram showing a configuration of a magnet for generating a magnetic field for sputtering in the film forming apparatus 1 of the present invention.

As shown in FIG. 1, the film forming apparatus 1 includes a sample chamber 10, a sample table 11, a sputtering unit 20, a sputtering control unit 25, a plasma supply unit 30, and a plasma control unit 38.
The sputter portion 20 corresponds to a suitable example of the first sputter portion within the scope of the claims.

The sample chamber 10 is a room that provides a space for film formation. A sample table 11 is arranged in the sample chamber 10. The sample table 11 is a table for arranging the film forming substrate 12. FIG. 1 shows how the film forming substrate 12 is arranged on the sample table 11. The sample table 11 is configured to be rotatable. Therefore, the film-forming substrate 12 can rotate together with the sample table 11. The film-forming substrate 12 is, for example, a semiconductor substrate (silicon substrate, a substrate made of a compound semiconductor material, etc.) or a piezoelectric substrate (lithium niobate substrate, lithium tantalate substrate, etc.). The film forming substrate 12 is a disk-shaped substrate. Further, a vacuum pump 13 is connected to the sample chamber 10. The vacuum pump 13 is a pump for evacuating the sample chamber 10.

The sputtering unit 20 includes a target material arranging unit 21, a sputtering power supply 22, a magnet for generating a magnetic field for sputtering 23, and a first gas supply unit 24. The sputter portion 20 is a portion for performing magnetron sputtering, and is a portion for supplying an element (for example, silicon) contained in the target material 26 to the film forming substrate 12. The sputtering power supply 22 and the first gas supply unit 24 correspond to a suitable example of the plasma generation unit for first sputtering within the scope of claims. The magnet for generating a magnetic field for sputtering 23 corresponds to a suitable example of the first magnetic field generating portion for sputtering, which is within the scope of the claims.

The target material arranging unit 21 is a table for arranging the target material 26. FIG. 1 shows how the target material 26 is arranged in the target material arrangement unit 21. The target material 26 is, for example, silicon. The sputtering power supply 22 is a power supply for supplying power to the target material 26 via the target material arranging unit 21. In addition, silicon corresponds to a suitable example of the first element in the claims.

The magnet for generating a magnetic field for sputtering 23 is arranged on the opposite surface of the target material arranging portion 21 where the target material 26 is arranged. As shown in FIGS. 1 and 2, the magnet for generating a magnetic field for sputtering 23 is composed of an outer magnet 23A and an inner magnet 23B. As shown in FIG. 2, the outer magnet 23A is a ring-shaped magnet, and the upper side is an S pole and the lower side is an N pole magnet. The inner magnet 23B is a columnar magnet. The upper side of the inner magnet 23B is the N pole, and the lower side of the inner magnet 23B is the S pole. The magnetic field generation magnet 23 for sputtering is a magnet that generates a magnetic field SM for sputtering, which is a magnetic field for performing magnetron sputtering (a magnetic field for confining plasma for sputtering). The magnetic field SM for sputtering is generated near the surface of the target material 26.

As shown in FIGS. 1 and 2, the spattering magnetic field generating magnet 23 generates the spattering magnetic field SM and also generates the sputtering portion diverging magnetic field DSM. The magnetic field SM for sputtering is a magnetic field generated from the N pole on the upper surface of the inner magnet 23B toward the S pole on the upper surface of the outer magnet 23A. On the other hand, the divergent magnetic field DSM of the spatter portion is a divergent magnetic field formed between the film forming substrate 12 and the magnetic field generated toward the S pole on the upper surface of the outer magnet 23A. The divergent magnetic field DSM of the sputter portion is not a magnetic field that directly contributes to magnetron sputtering, but is a magnetic field that is inevitably generated from the magnet 23 for generating a magnetic field for sputtering. The divergent magnetic field is a magnetic field in which the magnetic flux density decreases as the distance from the portion that generates the magnetic field (here, the magnet for generating the magnetic field for sputtering 23) increases.

The first gas supply unit 24 is a gas supply unit that supplies gas to the sample chamber 10. The supplied gas is an inert gas such as argon or a mixed gas of nitrogen gas and argon gas. The inert gas or mixed gas is mainly a gas that is a raw material for plasma for sputtering. Further, this inert gas or mixed gas also keeps the pressure of the sample chamber 10 at a predetermined pressure. The sputtering control unit 25 is a control unit that controls the sputtering power supply 22 and the first gas supply unit 24. The sputtering control unit 25 controls the power, voltage, duty ratio, frequency, etc. in the power supply of the sputtering power supply 22. The spatter control unit 25 also controls the flow rate (supply amount) of the inert gas or the mixed gas of nitrogen gas and argon gas in the first gas supply unit 24. The spatter control unit 25 corresponds to a suitable example of the first spatter control unit within the scope of the claims.

The plasma supply unit 30 includes a plasma generation chamber 31, a magnetic field generation unit 32 for plasma supply, a microwave source 33, a microwave waveguide 34, a microwave introduction window 35, a second gas supply unit 36, and a plasma supply unit. It is provided with a mouth 37. The plasma supply unit 30 is a unit that supplies high-density plasma generated by utilizing electron cyclotron resonance to the film forming substrate 12. The term "high density" means a current density of 10 mA / cm ² or more in the plasma generation chamber 31.

The plasma generation chamber 31 is a room that provides a space for generating high-density plasma by utilizing electron cyclotron resonance. The plasma supply magnetic field generation coil 32 is a solenoid coil wound around the plasma generation chamber 31. When flowed through the plasma supply magnetic field generation coil 32, the electron cyclotron resonance magnetic field CM, which is a magnetic field required to generate the electron cyclotron resonance, is generated in the plasma generation chamber 31, and the film forming substrate in the sample chamber 10 is generated. A divergent magnetic field DCM of the plasma supply unit, which is a divergent magnetic field, is generated between the 12 and the plasma supply unit. The plasma supply magnetic field generation coil 32 corresponds to a suitable example of the plasma supply magnetic field generation unit within the scope of the claims. As described above, the divergent magnetic field is a magnetic field in which the magnetic flux density decreases as the distance from the portion that generates the magnetic field (here, the plasma supply magnetic field generation coil 32) increases.

The microwave source 33 is a portion that generates microwaves for supplying to the plasma generation chamber 31. The frequency of the microwave is, for example, 2.45 GHz. The microwave waveguide 34 is a waveguide for guiding the microwave generated by the microwave source 33 to the plasma generation chamber 31. The microwave introduction window 35 is a window for supplying microwaves to the plasma generation chamber 31. The microwave introduction window 35 is formed of, for example, plate-shaped quartz, alumina, or the like.

The second gas supply unit 36 is a gas supply unit that supplies gas to the plasma generation chamber 31. The supplied gas is an inert gas such as argon or a mixed gas of nitrogen gas and argon gas. An inert gas such as argon or a mixed gas of nitrogen gas and argon gas corresponds to a suitable example of a gas for plasma generation within the claims. As will be described later, in the film forming apparatus 1 of the first embodiment, a mixed gas of nitrogen gas and argon gas is used.

The plasma supply port 37 is a supply port for supplying the plasma generated in the plasma generation chamber 31 to the sample chamber 10. The plasma supply port 37 exists at a position facing the microwave introduction window 35. The plasma generation chamber 31 is connected to the sample chamber 10 via the plasma supply port 37. Therefore, the sample chamber 10 and the plasma generation chamber 31 provide a closed space as a whole.

Only one microwave introduction window 35 is arranged at a position facing the plasma supply port 37. The microwave waveguide 34 is composed of only one tube that does not branch from the microwave source 33 toward the microwave introduction window 35. Therefore, the plasma supply unit 30 has a simple structure as a whole as compared with the plasma supply unit having a branched microwave waveguide (for example, that of the ECR film forming apparatus of Patent Document 1).

The plasma control unit 38 is a control unit that controls the microwave source 33 and the second gas supply unit 36. The plasma control unit 38 controls the power of the microwave source 33. The plasma control unit 38 also controls the flow rate (supply amount) of gas in the second gas supply unit 36.

Next, the operation of the film forming apparatus 1 will be described with reference to FIG.
First, the vacuum pump 13 exhausts the gas in the sample chamber 10 and the plasma generation chamber 31. After that, argon gas or a mixed gas of nitrogen gas and argon gas is supplied to the sample chamber 10 from the first gas supply unit 24. On the other hand, a mixed gas of nitrogen gas and argon gas is supplied to the plasma generation chamber 31 from the second gas supply unit 36. The flow rate (supply amount) of the argon gas in the sample chamber 10 or the mixed gas of nitrogen gas and argon gas is controlled by the spatter control unit 25. The flow rate (supply amount) of the mixed gas of nitrogen gas and argon gas in the plasma generation chamber 31 is controlled by the plasma control unit 38. As a result, the sample chamber 10 and the plasma generation chamber 31 are maintained at a predetermined pressure. The pressure in the sample chamber 10 and the pressure in the plasma generation chamber 31 are substantially uniform (or uniform).

In the sputtering unit 20, a DC voltage is applied from the sputtering power supply 22 to the target material arrangement unit 21. The DC voltage may be a pulse voltage. On the other hand, the sample table 11 and the film forming substrate 12 are set to a predetermined potential (for example, floating). Therefore, a predetermined voltage is generated between the sputter portion 20 and the film forming substrate 12. As a result, a plasma SP for sputtering, which is a plasma of argon gas supplied from the first gas supply unit 24 or a mixed gas of nitrogen gas and argon gas, is generated between the sputtering unit 20 and the film forming substrate 12. do.

As described above, in the sputtering section 20, as shown in FIG. 1, a sputtering magnetic field SM is generated on the surface of the target material 26 by the spattering magnetic field generating magnet 23. As shown in FIG. 1, the sputtering magnetic field SM causes the sputtering plasma SP to concentrate near the surface of the target material 26. Therefore, the ions of the plasma SP for sputtering (argon ions or argon and nitrogen ions) efficiently collide with the target material 26, and the silicon particle SE, which is an element contained in the target material, is scattered. The scattered silicon particles SE are directed toward the film forming substrate 12 (supply direction α). Therefore, the sputtering unit 20 supplies the silicon particles SE to the film forming substrate 12 by scattering the silicon particles SE contained in the target material 26. As described above, the sputtering unit 20 performs magnetron sputtering using the magnetic field SM for sputtering, which is a magnetic field for performing magnetron sputtering.

The sputtering control unit 25 controls the power, voltage, duty ratio, etc. in the power supply of the sputtering power supply 22, and controls the flow rate (supply amount) of the argon gas of the first gas supply unit or the mixed gas of nitrogen gas and argon gas. The state of the plasma SP for sputtering is controlled by controlling it. When the state of the plasma SP for sputtering is controlled, the supply amount of the scattered silicon particles SE is also controlled. Therefore, the sputtering control unit 25 can control the supply amount of the silicon particles SE. In this way, the sputtering control unit 25 controls the power, voltage, duty ratio, frequency, etc. in the power supply of the sputtering power supply 22, and the argon gas of the first gas supply unit or the mixed gas of nitrogen gas and argon gas. By controlling the flow rate (supply amount), the supply amount of the silicon particles SE can be controlled.

In the plasma supply unit 30, when a current is passed through the plasma supply magnetic field generation coil 32, an electron cyclotron resonance magnetic field CM is generated in the plasma generation chamber 31, and a divergent magnetic field plasma is generated in the sample chamber 10. Supply section divergent magnetic field DCM is generated. The magnetic field CM for electron cyclotron resonance and the divergent magnetic field DCM of the plasma supply unit are one connected magnetic field generated by passing a current through the magnetic field generation coil 32 for plasma supply.

Further, from the microwave source 33, microwaves are introduced into the plasma generation chamber 31 via the microwave waveguide 34 and the microwave introduction window 35. When microwaves are introduced in the plasma generation chamber 31 in a state where the magnetic field CM for electron cyclotron resonance is generated, electron cyclotron resonance occurs and ECR plasma EP as high-density plasma is generated. This ECR plasma EP is supplied from the plasma supply port 37 in the direction (supply direction β) toward the film forming substrate 12 along the divergence magnetic field DCM of the plasma supply unit. This ECR plasma EP is a plasma of a mixed gas of nitrogen gas and argon gas supplied from the second gas supply unit 36. As shown in FIG. 1, the supply direction β of the ECR plasma EP is inclined with respect to the normal NL of the film forming substrate 12. The normal NL is also the normal of the surface of the sample table 11 on which the film-forming substrate 12 is arranged.

The plasma control unit 38 controls the power of the microwave of the microwave source 33, and controls the flow rate (supply amount) of the mixed gas of nitrogen gas and argon gas supplied from the second gas supply unit 36. , The amount of plasma of the mixed gas of nitrogen gas and argon gas generated in the plasma generation chamber 31 is controlled. Therefore, the plasma control unit 38 can control the amount of plasma supplied as a mixed gas of nitrogen gas and argon gas supplied to the film forming substrate 12. In this way, the plasma control unit 38 controls the power of the microwave of the microwave source 33 and controls the flow rate (supply amount) of the mixed gas of nitrogen gas and argon gas supplied from the second gas supply unit 36. By doing so, the supply amount of ECR plasma EP (here, plasma of a mixed gas of nitrogen gas and argon gas) can be controlled.

As described above, the film forming substrate 12 is supplied with silicon particles SE from the sputter section 20, and plasma of a mixed gas of nitrogen gas and argon gas is supplied from the plasma supply section 30. In the vicinity of the surface of the film-forming substrate 12, the silicon particles SE react with the plasma of nitrogen gas, and a film of silicon nitride, which is a film of a compound of silicon and nitrogen, is formed on the film-forming substrate 12. That is, by operating the film forming apparatus 1, a film of silicon nitride can be formed on the film forming substrate 12. At this time, the film-forming substrate 12 may be rotated together with the sample table 11. By rotating the film-forming substrate 12, the film thickness formed on the film-forming substrate 12 can be made more uniform.

Further, in the film forming apparatus 1, the spatter control unit 25 controls the supply amount of silicon particles SE, and the plasma control unit 38 controls the plasma supply amount of a mixed gas of nitrogen gas and argon gas independently. Will be. That is, the control of power, voltage, duty ratio, frequency, etc. in the power supply of the sputter power supply 22 performed by the spatter control unit 25, the argon gas of the first gas supply unit, or the flow rate (supply) of the mixed gas of nitrogen gas and argon gas. Control of the amount), control of the microwave power of the microwave source 33 performed by the plasma control unit 38, and control of the flow rate (supply amount) of the mixed gas of nitrogen gas and argon gas of the second gas supply unit 36 are mutually controlled. It is done independently.

Next, the direction of the divergent magnetic field DSM in the spatter section and the direction of the divergent magnetic field DCM in the plasma supply section will be described with reference to FIG.

Of the direction of the divergent magnetic field DSM of the spatter portion and the direction of the divergent magnetic field DCM of the plasma supply portion, one is set in the direction toward the film forming substrate 12 and the other is set in the direction opposite to the direction toward the film forming substrate 12. In this case, the plasma (ECR plasma EP) of the mixed gas of nitrogen gas and argon gas supplied from the plasma supply unit 30 may not be properly supplied to the film forming substrate 12.

The reason is as follows.
Of the direction of the divergent magnetic field DSM of the spatter portion and the direction of the divergent magnetic field DCM of the plasma supply portion, one is in the direction toward the film forming substrate 12 and the other is in the direction opposite to the direction toward the film forming substrate 12. In that case, the divergent magnetic field DSM of the sputter portion and the divergent magnetic field DCM of the plasma supply portion may be connected. Then, a plasma (ECR plasma EP) of a mixed gas of nitrogen gas and an argon gas or a plasma SP for sputtering may be confined in the connected magnetic field. When the plasma of a mixed gas of nitrogen gas and argon gas (ECR plasma EP) is confined in a connected magnetic field, it may not be properly supplied to the film forming substrate 12.

In the film forming apparatus 1 of the first embodiment, in order to suppress the generation of the connected magnetic field, as shown in FIG. 1, the direction of the sputter portion divergent magnetic field DSM and the direction of the plasma supply portion divergent magnetic field DCM are both formed. It is set in the direction opposite to the direction toward the film substrate 12. By setting the direction of the divergent magnetic field DSM of the spatter section and the direction of the divergent magnetic field DCM of the plasma supply section in this way, the divergent magnetic field DSM of the sputter section and the divergent magnetic field DCM of the plasma supply section are repelled, and the connected magnetic fields are connected. Is suppressed.

The direction of the divergent magnetic field DSM in the spatter portion depends on the polarity of the outer magnet 23A. The outer magnet 23A has a wider upper surface and lower surface as compared with the inner magnet 23B. Further, the outer magnet 23A is a magnet made of the same material as the inner magnet 23B. Therefore, the direction of the divergent magnetic field DSM of the spatter portion is toward the S pole, which is the upper magnetic pole of the outer magnet 23A. The direction of the divergent magnetic field DCM of the plasma supply unit is determined by the direction of the current flowing through the magnetic field generation coil 32 for plasma supply.

The film forming apparatus 1 of the first embodiment is arranged in the sample chamber 10, the sample chamber 10, the sample table 11 on which the film forming substrate 12 can be arranged, and the sample chamber 10, and the silicon is arranged. It has a first target material arranging unit 21 capable of arranging the included target material 26, a sputtering power supply 22 for generating a sputtering plasma SP, and a first gas supply unit 24, and first emits ions of the sputtering plasma SP. Spatter control that controls the supply amount of silicon particles in the sputter section 20 and the sputter section 20 that supply the silicon particle SE to the film forming substrate 12 by colliding with the target material 26 and scattering the silicon particles SE. A plasma generation chamber 31 in which a mixed gas of nitrogen gas and argon gas is supplied, and a high-density plasma of a mixed gas of nitrogen gas and argon gas is generated by utilizing electron cyclotron resonance. The gas generation chamber 31 connected to the sample chamber 10 via 37 and the plasma generation chamber 31 connected to the plasma generation chamber 31 via a microwave introduction window 35 arranged at a position facing the plasma supply port are connected to the plasma generation chamber 31. A microwave waveguide 34 for introducing a microwave, a plasma supply unit 30 for supplying a plasma of a mixed gas of nitrogen gas and argon gas generated in the plasma generation chamber 31 to the film forming substrate 12, and a plasma supply unit 30. A plasma control unit 38 for controlling the plasma supply amount of the plasma generation gas in the unit 30 is provided, the spatter control unit 25 controls the supply amount of silicon particles, and the plasma control unit 38 controls nitrogen gas and argon gas. The control of the plasma supply amount of the mixed gas is an independent film forming apparatus. Therefore, it is possible to provide an ECR film forming apparatus and an ECR film forming method having a high degree of freedom and a simple structure. For example, even if the tolerance of the deviation of the film thickness of the film to be formed changes, it is easy to deal with it.

Further, in the film forming apparatus 1 of the first embodiment, the sputtering section 20 is a sputtering section divergent magnetic field which is a divergent magnetic field formed between the sputtering magnetic field SM for performing magnetron sputtering and the film forming substrate 12. It has a DSM and a magnetic field generation magnet 23 for sputtering to generate, and a plasma supply unit 30 is formed between a magnetic field SDM for electronic cyclotron resonance for generating electronic cyclotron resonance and a film forming substrate 12. It has a magnetic field generation coil 32 for plasma supply that generates a divergent magnetic field DCM, which is a divergent magnetic field. The direction is opposite to the direction. Therefore, the plasma (ECR plasma EP) of the mixed gas of nitrogen gas and argon gas supplied from the plasma supply unit 30 is more appropriately supplied to the film forming substrate 12. Further, the silicon particles SE are more appropriately supplied to the film forming substrate 12.

Further, in the film forming apparatus 1 of the first embodiment, the following film forming method is performed.
A film forming substrate arranging step of arranging the film forming substrate 12 on the sample table 11 in the sample chamber 10, a first target material arranging step of arranging the target material 26 containing silicon in the target material arranging portion 21. Silicon particles are supplied to the film forming substrate 12 by colliding the ions of the sputtering plasma SP with the target material 26 and scattering the silicon particles SE in the sputtering plasma generation step of generating the sputtering plasma SP. The first sputtering step, the first sputtering control step for controlling the supply amount of silicon particles SE in the first sputtering step, and the plasma generation chamber 31 for supplying oxygen gas to the plasma generation chamber 31 and passing through the microwave introduction window 31. By introducing a microwave into the cell and utilizing electron cyclotron resonance, a plasma of a mixed gas of nitrogen gas and argon gas is generated, and the plasma of a mixed gas of nitrogen gas and argon gas generated in the plasma generation chamber 31 is microwaved. A plasma supply step of supplying to the film forming substrate 12 from a plasma supply port at a position facing the introduction window, a plasma supply control step of controlling the amount of plasma of a mixed gas of nitrogen gas and argon gas in the plasma supply step, and a plasma supply control step. In the first sputter control step, the supply amount of silicon particles SE and the plasma supply amount of the mixed gas of nitrogen gas and argon gas are independently controlled in the plasma supply control step. A film forming method for forming a film of silicon nitride (a film of a compound of silicon and nitrogen contained in nitrogen gas) on 12. Therefore, an ECR film forming apparatus and an ECR film forming method having a high degree of freedom and a simple structure are provided. For example, even if the tolerance of the deviation of the film thickness of the film to be formed changes, it is easy to deal with it. The film of the compound of silicon and nitrogen contained in the nitrogen gas means the film containing the compound of silicon and nitrogen contained in the mixed gas (element contained in the plasma generation gas) as the main component. do.

Further, in the film forming method performed in the film forming apparatus 1 of the first embodiment, the sputtered portion divergent, which is a divergent magnetic field formed between the sputtering magnetic field SM for performing magnetron sputtering and the film forming substrate 12. A magnetic field generation step for sputtering that generates a magnetic field DSM, a magnetic field CM for electron cyclotron resonance for generating electronic cyclotron resonance, and a plasma supply unit divergence that is a divergent magnetic field formed between the film forming substrate 12 and the magnetic field CM. A magnetic field generation step for plasma supply for generating a magnetic field DCM is provided, and the direction of the sputter portion divergent magnetic field DSM and the direction of the plasma supply portion divergent magnetic field DCM are both opposite to the direction toward the film forming substrate 12. .. Therefore, the plasma (ECR plasma EP) of the mixed gas of nitrogen gas and argon gas supplied from the plasma supply unit 30 is more appropriately supplied to the film forming substrate 12.

Further, in the film forming apparatus 1 of the first embodiment, the pressure in the sample chamber is kept substantially uniform. Therefore, it is possible to realize a simpler film formation.

Further, in the film forming apparatus 1 of the first embodiment, the plasma supply direction of the mixed gas of nitrogen gas and argon gas by the plasma supply unit 30 is inclined with respect to the normal NL of the film forming substrate 12. Therefore, it is possible to realize a more accurate film formation.

[Second Embodiment]
Next, the second embodiment of the present invention will be described with reference to FIG. FIG. 3 is a cross-sectional view of the film forming apparatus 1A according to the second embodiment of the present invention. The second embodiment will be mainly described with respect to the differences from the first embodiment, and detailed description of the same configuration as the first embodiment will be omitted. As for points not particularly described, the description of the first embodiment is appropriately applied. Further, in FIG. 3, the magnetic fields (spatter magnetic field SM, sputter divergent magnetic field DSM, electron cyclotron resonance magnetic field CM and sputter divergent magnetic field DSM) and plasma (spatter plasma SP and ECR plasma EP) are not shown. ing.

In the film forming apparatus 1A, the sputtering unit 20 includes a target material arranging unit 21, a sputtering power supply 22, a magnet for generating a magnetic field for sputtering 23, a first gas supply unit 24, and a target moving unit 27. The target material arrangement unit 21, the sputtering power supply 22, the sputtering magnetic field generating magnet 23, and the first gas supply unit 24 are the same as those of the film forming apparatus 1 of the first embodiment.

The target moving unit 27 is a table for moving the target material arranging unit 21. The target moving portion 27 is arranged below the magnet 23 for generating a magnetic field for sputtering. The target moving portion 27 can move substantially parallel (or exactly parallel) to the normal NL of the film forming substrate 12. Therefore, it is possible to change either or both of the distance and the angle in the vertical direction (Y direction in FIG. 3) between the film forming substrate 12 and the target material 26.

Further, the target moving portion 27 moves substantially perpendicularly (or perpendicularly) to the normal NL of the film forming substrate 12 so that the film forming substrate 12 and the target material 26 move in the lateral direction (X in FIG. 3). It is possible to change either or both of the distance and the angle (direction). Further, the target moving unit 27 can be moved in an inclined manner with respect to the normal NL by changing the distances in the Y direction and the X direction.

According to the film forming apparatus 1A of the second embodiment, it is possible to form a film with a higher degree of freedom.

[Third Embodiment]
Next, the third embodiment of the present invention will be described with reference to FIG. FIG. 4 is a cross-sectional view of the film forming apparatus 1B according to the third embodiment of the present invention. The third embodiment will be mainly described in terms of differences from the first embodiment or the second embodiment, and detailed description of the same configuration as the first embodiment or the second embodiment will be omitted. As for points not particularly described, the description of the first embodiment or the second embodiment is appropriately applied. Further, in FIG. 4, the magnetic fields (spatter magnetic field SM, sputter divergent magnetic field DSM, electron cyclotron resonance magnetic field CM and sputter divergent magnetic field DSM) and plasma (spatter plasma SP and ECR plasma EP) are not shown. ing.

The film forming apparatus 1B of the third embodiment further includes a second sputter unit 40 and a second sputter control unit 45. That is, the film forming apparatus 1 of the first embodiment and the film forming apparatus 1A of the second embodiment have one sputtering section, whereas the film forming apparatus 1B of the third embodiment has the sputtering section 20 and It includes two sputtering units called a second sputtering unit 40. The second sputtering unit 40 includes a second target material arranging unit 41, a second sputtering power supply 42, and a magnet 43 for generating a second magnetic field for sputtering. The second target material 46 is arranged in the second target material arrangement unit 41. The second sputtering unit 40 shares the first gas supply unit 24 with the sputtering unit 20. The second sputtering power supply 42 and the first gas supply unit 24 correspond to a suitable example of the plasma generation unit for second sputtering within the scope of claims. The polarities of the spattering magnetic field generating magnet 23 and the second sputtering magnetic field generating magnet 43 are based on the distance relationship between the plasma supply unit 30, the spattering magnetic field generating magnet 23, and the second sputtering magnetic field generating magnet 43. Therefore, the polarity is not shown in FIG. 4 because it can be appropriately set to the optimum value.

The second target material 46 is, for example, silicon like the target material 26. The second target material 46 may be a material other than silicon, such as aluminum or tantalum. Aluminum, tantalum, etc. correspond to a suitable example of the second element in the claims. Further, the second sputtering control unit 45 controls the electric power, voltage, duty ratio, etc. in the power supply of the second sputtering power supply 42. Therefore, the second sputtering control unit 45 can control the supply amount of the silicon particles SE2. Further, the sputtering control unit 25 may control the supply amount of the silicon particles SE and the second sputtering control unit 45 may control the supply amount of the silicon particles SE2 independently as needed.

According to the film forming apparatus 1B of the third embodiment, it is possible to form a film with a higher degree of freedom.

The first to third embodiments of the present invention have been described above. However, the present invention is not limited to the above embodiment, and can be variously modified within the technical scope described in the claims.

In the first to third embodiments, the direction of the divergent magnetic field DSM of the spatter portion and the direction of the divergent magnetic field DCM of the plasma supply portion are both set in the directions opposite to the direction toward the film forming substrate 12. Not limited to. The direction of the sputter portion divergent magnetic field DSM and the direction of the plasma supply portion divergent magnetic field DCM may both be set in the direction toward the film forming substrate 12. More specifically, the upper side of the outer magnet 23A is the N pole and the lower side is the S pole, and the upper side of the inner magnet 23B is the S pole and the lower side is the N pole. Further, the direction of the current flowing through the plasma supply magnetic field generation coil 32 is opposite to the direction of the first to third embodiments. That is, one of the direction of the divergent magnetic field DSM of the spatter portion and the direction of the divergent magnetic field DCM of the plasma supply portion is set in the direction opposite to the direction toward the film forming substrate 12 and the other is set in the direction opposite to the direction toward the film forming substrate 12. It is good if it is not done.

In the first to third embodiments, the outer magnet 23A and the inner magnet 23B are made of the same material, but are not limited thereto. The outer magnet 23A and the inner magnet 23B do not have to be made of the same material. The sputtering magnetic field generating magnet 23 composed of the outer magnet 23A and the inner magnet 23B is configured so that the sputtering unit 20 can generate a sputtering magnetic field SM to the extent that magnetron sputtering is performed. Just do it.

In the first to third embodiments, a mixed gas of nitrogen gas and argon gas has been used as the plasma generation gas, but the present invention is not limited to this. The plasma generation gas may be only a reactive gas such as oxygen gas, a mixed gas of oxygen gas and argon gas, or an inert gas. When an oxygen gas or a mixed gas of oxygen gas and argon gas is used, a film of silicon oxide is formed on the film-forming substrate 12. When an inert gas is used as the plasma-generating gas, and when only the inert gas is supplied from the first gas supply unit 24, a silicon film is formed on the film-forming substrate 12. This silicon film corresponds to a suitable example of the film of the first element in the claims. The silicon film (first element film) means a film containing silicon (first element) as a main component.

Further, when an inert gas is used as the gas for generating plasma, and when a mixed gas of nitrogen gas and argon gas is supplied from the first gas supply unit 24, the silicon nitride film is formed on the film forming substrate 12. Can be formed. Further, when an inert gas is used as the gas for generating plasma, and when a mixed gas of oxygen gas and argon gas is supplied from the first gas supply unit 24, a silicon oxide film is formed on the film forming substrate 12. Can be formed.

In the first to third embodiments, the sputtering unit 20 and the second sputtering unit 40 are both parts that perform DC sputtering, but may be parts that perform RF sputtering. Further, one of the sputtering unit 20 and the second sputtering unit 40 may be a portion for performing DC sputtering, and the other may be a portion for performing RF sputtering.

In the first embodiment and the second embodiment, silicon has been used as the target material 26, but the present invention is not limited to this. Aluminum, tantalum and the like can be used as the target material 26. Further, in the third embodiment, the target material 26 and the second target material are both silicon, but the present invention is not limited thereto. The target material 26 and the second target material 46 may be materials other than silicon (for example, aluminum, tantalum, etc.). Further, the target material 26 and the second target material 46 may be the same material or different materials.

In the second embodiment, the target moving portion 27 can move in parallel with the direction in which the silicon particles SE are supplied, and is perpendicular to or inclined with respect to the direction in which the silicon particles SE are supplied. It was also mobile, but not limited to this. The target moving portion 27 may be movable only in parallel with the direction in which the silicon particles SE are supplied. Further, the target moving portion 27 may be movable only perpendicular to or inclined with respect to the direction in which the silicon particles SE are supplied.

1, 1A, 1B film forming equipment 10 Sample room 11 Sample stand 12 Film forming substrate 13 Vacuum pump 20 Spatter section 21 Target placement stand 22 Spatter power supply (1st sputtering plasma generator)
23 Magnet for generating magnetic field for sputtering (first magnetic field generating part for sputtering)
23A Outer magnet 23B Inner magnet 24 1st gas supply part (1st sputter plasma generation part, 2nd sputter plasma generation part)
25 Sputter control unit 30 Plasma supply unit 31 Plasma generation chamber 32 Magnetic field generation coil for plasma supply (magnetic field generation unit for plasma supply)
33 Microwave source 34 Microwave waveguide 35 Microwave introduction window 36 2nd gas supply unit 37 Plasma supply port 38 Plasma control unit 40 2nd spatter unit 41 2nd target placement table 42 2nd sputter power supply (plasma generation for 2nd sputter) Department)
43 Magnet for generating magnetic field for 2nd spatter 45 Magnetic field for 2nd spatter control SM Spattering magnetic field DSM Spattering magnetic field CM Electronic cyclotron resonance magnetic field DCM Plasma supply part diverging magnetic field

Claims (13)

With the sample room
A sample table that is placed in the sample chamber and on which a film-forming substrate can be placed,
It has a first target material placement unit that is arranged in the sample chamber and can arrange a first target material containing the first element, and a first plasma generation unit for sputtering that generates plasma for sputtering. A first sputtering unit that supplies the particles of the first element to the film-forming substrate by colliding the ions of the plasma for sputtering with the first target material and scattering the particles of the first element.
A first sputtering control unit that controls the supply amount of particles of the first element in the first sputtering unit,
A plasma supply unit that is supplied with a plasma generation gas and generates a high-density plasma of the plasma generation gas by using electron cyclotron resonance, and is connected to the sample chamber via a plasma supply port. It has a chamber and a microwave waveguide that is connected to the plasma generation chamber via a microwave introduction window arranged at a position facing the plasma supply port and that introduces microwaves into the plasma generation chamber. , A plasma supply unit that supplies high-density plasma of the plasma generation gas generated in the plasma generation chamber to the film forming substrate, and
A plasma control unit for controlling the supply amount of high-density plasma of the plasma generation gas in the plasma supply unit is provided.
The control of the supply amount of the particles of the first element by the first sputter control unit and the control of the supply amount of the high-density plasma of the plasma generation gas by the plasma control unit are performed independently, and the first element. Or a film of a compound of the first element and an element contained in the plasma generation gas is formed.
The first sputtering section generates a first sputtering magnetic field for performing magnetron sputtering and a first sputtering section diverging magnetic field which is a diverging magnetic field formed between the film forming substrate. Has a magnetic field generator
The plasma supply unit generates a plasma supply magnetic field that generates a divergent magnetic field, which is a divergent magnetic field formed between the electron cyclotron resonance magnetic field for generating the electron cyclotron resonance and the film forming substrate. Has a part,
The direction of the divergent magnetic field of the first sputter portion and the direction of the divergent magnetic field of the plasma supply portion are both in the direction toward the film forming substrate or both in the direction opposite to the direction toward the film forming substrate. Membrane device. The film forming apparatus according to claim 1, wherein the pressure in the sample chamber is substantially uniform. The film forming apparatus according to claim 1 or 2, wherein the supply direction of the high-density plasma of the plasma generating gas by the plasma supply unit is inclined with respect to the normal line of the film forming substrate. The first target material arranging portion moves substantially parallel to the normal line of the film forming substrate, whereby one or both of the distance and the angle between the film forming substrate and the first target material. The film forming apparatus according to any one of claims 1 to 3, wherein the film forming apparatus can be changed. By moving the first target material arranging portion substantially perpendicular to or substantially inclined with respect to the normal line of the film forming substrate, any of the distance and the angle between the film forming substrate and the first target material. The film forming apparatus according to any one of claims 1 to 4, wherein one or both of them can be changed. A second target material placement unit that is placed in the sample chamber and can place a second target material that contains the first element or a second element different from the first element, and a second that generates plasma for spatter. The first element or the said The film forming apparatus according to any one of claims 1 to 5, further comprising a second sputter portion for supplying particles of the second element to the film forming substrate. A second sputtering control unit that controls the supply amount of particles of the first element or the second element in the second sputtering unit is provided.
The control of the supply amount of the particles of the first element by the first sputtering control unit and the control of the supply amount of the particles of the first element or the second element by the second sputtering control unit are performed independently. The film forming apparatus according to claim 6. The process of arranging the film-forming substrate on the sample table in the sample chamber and the process of arranging the film-forming substrate,
The first target material placement step of arranging the first target material containing the first element in the first target material placement section, and
Sputtering plasma generation process to generate sputtering plasma,
The first sputtering step of supplying the particles of the first element to the film forming substrate by colliding the ions of the plasma for sputtering with the first target material and scattering the particles of the first element.
A first sputtering control step for controlling the supply amount of particles of the first element in the first sputtering step,
A high-density plasma of the plasma generation gas is generated by supplying a plasma generation gas to the plasma generation chamber, introducing the microwave into the plasma generation chamber through the microwave introduction window, and utilizing electron cyclotron resonance. Then, a plasma supply step of supplying high-density plasma of the plasma generation gas generated in the plasma generation chamber to the film forming substrate from a plasma supply port at a position facing the microwave introduction window.
A plasma supply control step for controlling the supply amount of high-density plasma of the plasma generation gas in the plasma supply step is provided.
The control of the supply amount of the particles of the first element in the first spatter control step and the control of the supply amount of high-density plasma of the plasma generation gas in the plasma supply control step are independently performed, and the film forming substrate is controlled. A film of the first element or a film of a compound of the first element and an element contained in the plasma generation gas is formed on the film.
A first sputtering magnetic field generation step for generating a first sputtering magnetic field for performing magnetron sputtering and a first sputtering portion diverging magnetic field which is a diverging magnetic field formed between the film forming substrate.
A magnetic field for electron cyclotron resonance for generating electron cyclotron resonance and a magnetic field generation step for plasma supply for generating a divergent magnetic field of a plasma supply unit, which is a divergent magnetic field formed between the film-forming substrate, are provided.
The direction of the divergent magnetic field of the first sputter portion and the direction of the divergent magnetic field of the plasma supply portion are both in the direction toward the film forming substrate or both in the direction opposite to the direction toward the film forming substrate. Membrane method. The film forming method according to claim 8, wherein the pressure in the sample chamber is kept substantially uniform. The film forming method according to claim 8 or 9, wherein the supply direction of the high-density plasma of the plasma generation gas is inclined with respect to the normal line of the film forming substrate. By moving the first target material substantially parallel to the normal of the film forming substrate, one or both of the distance and the angle between the film forming substrate and the first target material are changed. The film forming method according to any one of claims 8 to 10, further comprising a step. By moving the first target material substantially perpendicular to or inclined with respect to the normal of the film forming substrate, either one of the distance and the angle between the film forming substrate and the first target material or The film forming method according to any one of claims 8 to 11, further comprising a step of changing both. A second target material placement process for arranging the second target material in the second target material placement section,
A second sputtering step of supplying particles of the second element contained in the second target material to the film forming substrate by sputtering the second target material with a plasma for sputtering.
A second sputtering control step for controlling the supply amount of the particles of the second element in the second sputtering step is provided.
Claims 8 to 12 in which the control of the supply amount of the particles of the first element by the first sputtering control step and the control of the supply amount of the particles of the second element by the second sputtering control step are performed independently. The film forming method according to any one of the claims.

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