JP2018021223A - Film deposition apparatus and film deposition method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a highly-flexible ECR film deposition apparatus having a simple structure; and to provide an ECR film deposition method.SOLUTION: A film deposition apparatus has a sample chamber 10, a sample stand 11, a first target material arrangement part 21 capable of arranging a first target material containing a first element, and first sputtering plasma generation parts 22, 24 for generating sputtering plasma, also has a first sputtering part 20 for supplying particles of the first element to a substrate 12 for film deposition, a first sputtering control part 25 for controlling a supply amount of the particles of the first element, and a plasma generation chamber 31, and includes a plasma supply part 30 for supplying high-density plasma of gas for plasma generation generated in the plasma generation chamber 31 to the substrate 12 for film deposition, and a plasma control part 38 for controlling a supply amount of the high-density plasma of gas for plasma generation, in which control of the supply amount of the particles of the first element by the first sputtering control part 25 and control of the supply amount of the high-density plasma of gas for plasma generation by the plasma control part 38 are performed independently.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a film forming apparatus and a film forming method.

  2. Description of the Related Art Conventionally, a film forming apparatus and a film forming method using high-density plasma generated by using electron cyclotron resonance (hereinafter also referred to as ECR) are known (see Patent Document 1). ). Such a film forming apparatus and such a film forming method are referred to as an ECR plasma film forming apparatus and an ECR plasma film forming method.

  The ECR plasma film forming apparatus of Patent Document 1 (FIG. 5) includes a sputtering target 43 and ECR plasma supply units 21 to 33. In this ECR plasma film forming apparatus, plasma is generated in the vicinity of the sputter target 43 in addition to the high-density plasma generated by using ECR. Ions contained in the plasma generated in the vicinity of the sputter target 43 collide with the target, and target constituent elements are released. The released target constituent element adheres to the deposition substrate and forms a film. Further, in this ECR plasma film forming apparatus, ions of elements contained in the high density plasma generated by ECR are also supplied to the film forming substrate. When the element contained in the high-density plasma generated by ECR is a reactive element (reactive gas), the film formed on the deposition substrate is a film of a compound of the target constituent element and the reactive element. . When the element contained in the high-density plasma generated by ECR is an inert element (inert gas), the film formed on the deposition substrate is a film of a target constituent element.

JP 2005-281726 A

  By the way, it is desirable that the ECR film forming apparatus and the ECR film forming method have a high degree of freedom to meet various requirements. For example, it is desirable to have a degree of freedom to deal with even if the tolerance of the deviation of the thickness of the film to be formed changes. However, Patent Document 1 does not describe a method or structure for responding to various requirements, and the ECR film forming apparatus and the ECR film forming method of Patent Document 1 cannot be said to have a high degree of freedom.

  Further, it is desirable that the structure of the ECR film forming apparatus is a simple structure. However, the ECR film forming apparatus of Patent Document 1 requires two microwave waveguides 30 and two microwave introduction windows 32. Therefore, the structure of the ECR film forming apparatus disclosed in Patent Document 1 is not a simple structure.

  An object of the present invention is to provide an ECR film forming apparatus and an ECR film forming method having a high degree of freedom and a simple structure.

  The present invention provides a sample chamber, a sample stage disposed in the sample chamber, on which a film formation substrate can be disposed, and a first target material including a first element disposed in the sample chamber. A first target material arrangement portion capable of generating a sputtering plasma, and causing the sputtering target ions to collide with the first target material, A first sputter unit that supplies particles of the first element to the film-forming substrate by scattering particles, and a first sputter control that controls a supply amount of the particles of the first element in the first sputter unit. A plasma generation chamber that is supplied with a plasma generation gas and generates high-density plasma of the plasma generation gas by utilizing electron cyclotron resonance, the plasma supply port A plasma generation chamber connected to the sample chamber via a microwave introduction window disposed at a position facing the plasma supply port, and a microwave is supplied to the plasma generation chamber. A microwave waveguide to be introduced, and a plasma supply unit that supplies a high-density plasma of the plasma generation gas generated in the plasma generation chamber to the film formation substrate; and the plasma in the plasma supply unit A plasma control unit for controlling a supply amount of the high-density plasma of the generation gas, the control of the supply amount of the particles of the first element by the first sputtering control unit, and the plasma generation unit by the plasma control unit Control of the supply amount of the high-density plasma of the gas relates to a film forming apparatus which is performed independently.

  The first sputtering unit generates a first sputtering magnetic field for performing magnetron sputtering and a first sputtering unit diverging magnetic field which is a diverging magnetic field formed between the film forming substrate and the first sputtering magnetic field. A plasma supply unit having a sputtering magnetic field generation unit, wherein the plasma supply unit is a divergent magnetic field formed between an electron cyclotron resonance magnetic field for generating electron cyclotron resonance and the film formation substrate. A plasma supply magnetic field generating unit for generating a divergent magnetic field, and the direction of the first sputter unit divergent magnetic field and the direction of the plasma supply unit divergent magnetic field are both directed toward the film formation substrate, or both The direction may be opposite to the direction toward the film formation substrate.

  The pressure in the sample chamber may be substantially uniform.

  In addition, a supply direction of the high-density plasma of the plasma generation gas by the plasma supply unit may be inclined with respect to a normal line of the film formation substrate.

  The first target material disposition portion moves substantially parallel to the normal line of the film formation substrate, whereby one or both of the distance and the angle between the film formation substrate and the first target material. May be changeable.

  The first target material placement portion moves substantially perpendicularly to the normal line of the film formation substrate, or moves substantially at an inclination, so that the distance and angle between the film formation substrate and the first target material can be adjusted. Either one or both may be changeable.

  A second target material disposition portion disposed in the sample chamber and capable of disposing a second target material containing the first element or a second element different from the first element; and a second target material generating a sputtering plasma. A sputtering plasma generator, and the ions of the sputtering plasma collide with the second target material, and the particles of the first element or the second element are scattered to disperse the first element or the second element material. You may provide the 2nd sputter | spatter part which supplies the particle | grains of 2nd element to the said film-forming substrate.

  A second sputter control unit that controls a supply amount of the first element or the second element particles in the second sputter unit, and the supply amount of the one element particles by the first sputter control unit. And the control of the supply amount of the particles of the first element or the second element by the second sputtering control unit may be performed independently.

Further, the present invention provides a film formation substrate placement step of placing a film formation substrate on a sample stage in a sample chamber,
A first target material placement step of placing a first target material containing a first element in the first target material placement portion; a sputtering plasma generation step of generating sputtering plasma; and ions of the sputtering plasma A first sputtering step of supplying particles of the first element to the film-forming substrate by colliding with one target material and scattering the particles of the first element; and the first element in the first sputtering step. A first sputter control step for controlling the amount of particles supplied, supplying a plasma generation gas to the plasma generation chamber, introducing a microwave into the plasma generation chamber through a microwave introduction window, and utilizing electron cyclotron resonance The plasma generated gas is generated in the plasma generation chamber by generating a high density plasma of the plasma generating gas. A plasma supply step of supplying a high-density plasma of the forming gas to the film-forming substrate from a plasma supply port at a position facing the microwave introduction window; and a high-density plasma of the plasma generating gas in the plasma supply step A plasma supply control step for controlling the supply amount, and the control of the supply amount of the particles of the first element in the first sputtering control step and the supply of high-density plasma of the plasma generating gas in the plasma supply control step Film formation in which the amount is controlled independently and a film containing the first element or a film of a compound of the first element and an element contained in the plasma generating gas is formed on the film formation substrate. Regarding the method.

  A first sputtering magnetic field generating step for generating a first sputtering magnetic field for performing magnetron sputtering and a first sputtering part diverging magnetic field which is a diverging magnetic field formed between the film-forming substrate and An electron cyclotron resonance magnetic field for generating electron cyclotron resonance, and a plasma supply magnetic field generation step for generating a plasma supply portion divergent magnetic field, which is a divergent magnetic field formed between the film-forming substrate, and The direction of the divergent magnetic field of the first sputter unit and the direction of the divergent magnetic field of the plasma supply unit are both directions toward the film formation substrate, or both are directions opposite to the direction toward the film formation substrate. May be.

  Further, the pressure in the material chamber may be kept substantially uniform.

  The plasma supply direction of the plasma generating gas may be inclined with respect to the normal line of the film formation substrate.

  Further, by moving the first target material substantially parallel to the normal line of the film formation substrate, one or both of the distance and the angle between the film formation substrate and the first target material can be set. You may provide the process to change.

  Either the distance or the angle between the film formation substrate and the first target material is obtained by moving the first target material substantially perpendicularly to the normal line of the film formation substrate, or by substantially moving the first target material. You may provide the process of changing one or both.

  A second target material placement step of placing the second target material in the second target material placement portion, and sputtering the second target material with a sputtering plasma, whereby particles of the second element contained in the second target material And a second sputtering control step for controlling the supply amount of the particles of the second element in the second sputtering step, and the first sputtering control step. The control of the supply amount of the first element particles and the control of the supply amount of the second element particles in the second sputtering control step may be performed independently.

  According to the present invention, an ECR film forming apparatus and an ECR film forming method having a high degree of freedom and a simple structure can be provided.

These are figures which show the film-forming apparatus 1 of 1st Embodiment of this invention. These are figures which show the structure of the magnetic field generation magnet for sputtering in the film-forming apparatus 1 of this invention. These are figures which show 1 A of film-forming apparatuses of 2nd Embodiment of this invention. These are figures which show the film-forming apparatus 1B of 3rd Embodiment of this invention.

[First Embodiment]
Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a diagram showing a film forming apparatus 1 according to the first embodiment of the present invention. FIG. 2 is a diagram showing a configuration of a sputtering magnetic field generating magnet in the film forming apparatus 1 of the present invention.

As shown in FIG. 1, the film forming apparatus 1 includes a sample chamber 10, a sample stage 11, a sputtering unit 20, a sputtering control unit 25, a plasma supply unit 30, and a plasma control unit 38.
The sputter unit 20 corresponds to a preferred example of the first sputter unit in the claims.

  The sample chamber 10 is a chamber that provides a space for film formation. A sample stage 11 is arranged in the sample chamber 10. The sample table 11 is a table on which the film formation substrate 12 is arranged. FIG. 1 shows a state in which the film formation substrate 12 is arranged on the sample stage 11. The sample stage 11 is configured to be rotatable. Therefore, the film formation substrate 12 can be rotated together with the sample stage 11. The film formation substrate 12 is, for example, a semiconductor substrate (silicon substrate, compound semiconductor material substrate, etc.) or a piezoelectric substrate (lithium niobate substrate, lithium tantalate substrate, etc.). The film formation substrate 12 is a disk-shaped substrate. Further, a vacuum pump 13 is connected to the sample chamber 10. The vacuum pump 13 is a pump for evacuating the sample chamber 10.

  The sputtering unit 20 includes a target material arranging unit 21, a sputtering power source 22, a sputtering magnetic field generating magnet 23, and a first gas supply unit 24. The sputtering unit 20 is a part that performs magnetron sputtering, and is a part that supplies an element (for example, silicon) contained in the target material 26 to the film formation substrate 12. The sputtering power source 22 and the first gas supply unit 24 correspond to a suitable example of the first sputtering plasma generation unit in the claims. The sputtering magnetic field generating magnet 23 corresponds to a preferred example of the first sputtering magnetic field generating section.

  The target material placement unit 21 is a table for placing the target material 26. FIG. 1 shows a state in which the target material 26 is arranged in the target material arrangement unit 21. The target material 26 is, for example, silicon. The sputtering power source 22 is a power source for supplying power to the target material 26 via the target material placement unit 21. Note that silicon corresponds to a preferred example of the first element in the claims.

  The sputtering magnetic field generating magnet 23 is disposed on the surface opposite to the surface on which the target material 26 is disposed in the target material placement portion 21. As shown in FIGS. 1 and 2, the sputtering magnetic field generating magnet 23 includes an outer magnet 23A and an inner magnet 23B. As shown in FIG. 2, the outer magnet 23 </ b> A is a ring-shaped magnet, and the upper side is a south pole and the lower side is a north pole. The inner magnet 23B is a columnar magnet. The upper side of the inner magnet 23B is the N pole, and the lower side of the inner magnet 23B is the S pole. The sputtering magnetic field generating magnet 23 is a magnet that generates a sputtering magnetic field SM that is a magnetic field for performing magnetron sputtering (a magnetic field for confining sputtering plasma). The sputtering magnetic field SM is generated near the surface of the target material 26.

  As shown in FIGS. 1 and 2, the sputtering magnetic field generating magnet 23 generates a sputtering magnetic field SM and also generates a sputter part diverging magnetic field DSM. The sputtering magnetic field SM is a magnetic field generated from the N pole on the upper surface of the inner magnet 23B toward the S pole on the upper surface of the outer magnet 23A. On the other hand, the sputter part divergent magnetic field DSM is a divergent magnetic field formed between the film formation substrate 12 and a magnetic field generated toward the S pole on the upper surface of the outer magnet 23A. The sputter part diverging magnetic field DSM is not a magnetic field that directly contributes to magnetron sputtering, but is a magnetic field inevitably generated from the sputtering magnetic field generating magnet 23. The divergent magnetic field is a magnetic field in which the magnetic flux density decreases with increasing distance from the portion that generates the magnetic field (here, the sputtering magnetic field generating magnet 23).

  The first gas supply unit 24 is a gas supply unit that supplies gas to the sample chamber 10. The supplied gas is an inert gas such as argon, or a mixed gas of nitrogen gas and argon gas. This inert gas or mixed gas is mainly a gas that becomes a raw material of plasma for sputtering. Further, this inert gas or mixed gas also keeps the pressure in the sample chamber 10 at a predetermined pressure. The sputtering control unit 25 is a control unit that controls the sputtering power source 22 and the first gas supply unit 24. The sputter control unit 25 controls the power, voltage, duty ratio, frequency, etc. in the power supply of the sputter power source 22. The sputter control unit 25 also controls the flow rate (supply amount) of the inert gas or the mixed gas of nitrogen gas and argon gas in the first gas supply unit 24. The sputter controller 25 corresponds to a preferred example of the first sputter controller in the claims.

The plasma supply unit 30 includes a plasma generation chamber 31, a plasma supply magnetic field generation unit 32, a microwave source 33, a microwave waveguide 34, a microwave introduction window 35, a second gas supply unit 36, and a plasma supply. And a mouth 37. The plasma supply unit 30 is a part that supplies high-density plasma generated by utilizing electron cyclotron resonance to the film-forming substrate 12. “High density” means a current density of 10 mA / cm ² or more in the plasma generation chamber 31.

  The plasma generation chamber 31 is a room that provides a space for generating high-density plasma using electron cyclotron resonance. The plasma supply magnetic field generating coil 32 is a solenoid coil wound around the plasma generation chamber 31. When flowed through the plasma supply magnetic field generating coil 32, an electron cyclotron resonance magnetic field CM, which is a magnetic field necessary for generating electron cyclotron resonance, is generated in the plasma generation chamber 31, and the film formation substrate in the sample chamber 10 is generated. 12, a plasma supply unit divergent magnetic field DCM that is a divergent magnetic field is generated. The plasma supply magnetic field generating coil 32 corresponds to a preferred example of the plasma supply magnetic field generating section in the claims. As described above, the divergent magnetic field is a magnetic field in which the magnetic flux density decreases as the distance from the part that generates the magnetic field (here, the plasma supply magnetic field generating coil 32) increases.

  The microwave source 33 is a part that generates a microwave to be supplied to the plasma generation chamber 31. The frequency of the microwave is 2.45 GHz, for example. The microwave waveguide 34 is a waveguide for guiding the microwave generated by the microwave source 33 to the plasma generation chamber 31. The microwave introduction window 35 is a window for supplying microwaves to the plasma generation chamber 31. The microwave introduction window 35 is made of, for example, plate-like quartz, alumina or the like.

  The second gas supply unit 36 is a gas supply unit that supplies gas to the plasma generation chamber 31. The supplied gas is an inert gas such as argon, or a mixed gas of nitrogen gas and argon gas. An inert gas such as argon or a mixed gas of nitrogen gas and argon gas corresponds to a suitable example of the plasma generating gas in the claims. As will be described later, in the film forming apparatus 1 of the first embodiment, a mixed gas of nitrogen gas and argon gas is used.

  The plasma supply port 37 is a supply port for supplying the plasma generated in the plasma generation chamber 31 to the sample chamber 10. The plasma supply port 37 exists at a position facing the microwave introduction window 35. The plasma generation chamber 31 is connected to the sample chamber 10 via the plasma supply port 37. Therefore, the sample chamber 10 and the plasma generation chamber 31 provide a sealed space as a whole.

  Only one microwave introduction window 35 is disposed at a position facing the plasma supply port 37. The microwave waveguide 34 is composed of only one tube that does not branch from the microwave source 33 toward the microwave introduction window 35. Therefore, the plasma supply unit 30 has a simple structure as a whole as compared with a plasma supply unit having a branching microwave waveguide (for example, the one of the ECR film forming apparatus of Patent Document 1).

  The plasma control unit 38 is a control unit that controls the microwave source 33 and the second gas supply unit 36. The plasma control unit 38 controls the power of the microwave source 33. The plasma control unit 38 also controls the gas flow rate (supply amount) in the second gas supply unit 36.

Next, the operation of the film forming apparatus 1 will be described with reference to FIG.
First, the gas in the sample chamber 10 and the plasma generation chamber 31 is exhausted by the vacuum pump 13. Thereafter, argon gas or a mixed gas of nitrogen gas and argon gas is supplied to the sample chamber 10 from the first gas supply unit 24. On the other hand, a mixed gas of nitrogen gas and argon gas is supplied from the second gas supply unit 36 to the plasma generation chamber 31. The sputter control unit 25 controls the flow rate (supply amount) of the argon gas in the sample chamber 10 or the mixed gas of nitrogen gas and argon gas. The flow rate (supply amount) of the mixed gas of nitrogen gas and argon gas in the plasma generation chamber 31 is controlled by the plasma control unit 38. As a result, the sample chamber 10 and the plasma generation chamber 31 are maintained at a predetermined pressure. The pressure in the sample chamber 10 and the pressure in the plasma generation chamber 31 are substantially uniform (or uniform).

  In the sputtering unit 20, a DC voltage is applied from the sputtering power source 22 to the target material placement unit 21. Note that the DC voltage may be a pulsed voltage. On the other hand, the sample stage 11 and the film formation substrate 12 are set to a predetermined potential (for example, floating). Therefore, a predetermined voltage is generated between the sputtering unit 20 and the film formation substrate 12. As a result, a sputtering plasma SP, which is a plasma of argon gas supplied from the first gas supply unit 24 or a mixed gas of nitrogen gas and argon gas, is generated between the sputtering unit 20 and the film formation substrate 12. To do.

  As described above, in the sputtering unit 20, as shown in FIG. 1, the sputtering magnetic field SM is generated on the surface of the target material 26 by the sputtering magnetic field generating magnet 23. As shown in FIG. 1, the sputtering plasma SP is concentrated near the surface of the target material 26 by the sputtering magnetic field SM. Therefore, ions of the sputtering plasma SP (argon ions or argon and nitrogen ions) efficiently collide with the target material 26, and silicon particles SE that are elements contained in the target material are scattered. The scattered silicon particles SE are directed in the direction toward the film-forming substrate 12 (supply direction α). Therefore, the sputtering unit 20 supplies the silicon particles SE to the deposition substrate 12 by scattering the silicon particles SE contained in the target material 26. Thus, the sputter unit 20 performs magnetron sputtering using the sputtering magnetic field SM, which is a magnetic field for performing magnetron sputtering.

  The sputter control unit 25 controls the power, voltage, duty ratio, etc. in the power supply of the sputter power source 22, and controls the flow rate (supply amount) of the argon gas of the first gas supply unit or the mixed gas of nitrogen gas and argon gas. Or the like to control the state of the sputtering plasma SP. When the state of the sputtering plasma SP is controlled, the supply amount of the scattered silicon particles SE is also controlled. Therefore, the sputter control unit 25 can control the supply amount of the silicon particles SE. Thus, the sputter control unit 25 controls the power, voltage, duty ratio, frequency, etc. in the power supply of the sputter power source 22, or the argon gas of the first gas supply unit or the mixed gas of nitrogen gas and argon gas. The supply amount of the silicon particles SE can be controlled by controlling the flow rate (supply amount).

  In the plasma supply unit 30, an electric current flows through the plasma supply magnetic field generating coil 32, thereby generating an electron cyclotron resonance magnetic field CM in the plasma generation chamber 31, and plasma that is a diverging magnetic field in the sample chamber 10. A supply unit divergent magnetic field DCM is generated. The electron cyclotron resonance magnetic field CM and the plasma supply unit divergence magnetic field DCM are one continuous magnetic field generated when a current flows through the plasma supply magnetic field generating coil 32.

  Further, microwaves are introduced from the microwave source 33 into the plasma generation chamber 31 through the microwave waveguide 34 and the microwave introduction window 35. When microwaves are introduced in the plasma generation chamber 31 while the electron cyclotron resonance magnetic field CM is generated, electron cyclotron resonance occurs, and ECR plasma EP as high-density plasma is generated. The ECR plasma EP is supplied from the plasma supply port 37 along the plasma supply unit divergent magnetic field DCM toward the film forming substrate 12 (supply direction β). The ECR plasma EP is a plasma of a mixed gas of nitrogen gas and argon gas supplied from the second gas supply unit 36. As shown in FIG. 1, the supply direction β of the ECR plasma EP is inclined with respect to the normal line NL of the film formation substrate 12. Note that the normal line NL is also the normal line of the surface on the sample stage 11 on which the film formation substrate 12 is disposed.

  The plasma control unit 38 controls the microwave power of the microwave source 33 or controls the flow rate (supply amount) of the mixed gas of nitrogen gas and argon gas supplied from the second gas supply unit 36. The amount of plasma of the mixed gas of nitrogen gas and argon gas generated in the plasma generation chamber 31 is controlled. Therefore, the plasma control unit 38 can control the plasma supply amount of the mixed gas of nitrogen gas and argon gas supplied to the film formation substrate 12. Thus, the plasma control unit 38 controls the microwave power of the microwave source 33 and controls the flow rate (supply amount) of the mixed gas of nitrogen gas and argon gas supplied from the second gas supply unit 36. Thus, the supply amount of ECR plasma EP (here, plasma of a mixed gas of nitrogen gas and argon gas) can be controlled.

  As described above, silicon particles SE are supplied from the sputtering unit 20 to the film formation substrate 12, and plasma of a mixed gas of nitrogen gas and argon gas is supplied from the plasma supply unit 30. In the vicinity of the surface of the deposition substrate 12, the silicon particles SE react with the nitrogen gas plasma, and a silicon nitride film, which is a film of a compound of silicon and nitrogen, is formed on the deposition substrate 12. That is, by operating the film forming apparatus 1, a silicon nitride film can be formed on the film forming substrate 12. At this time, the film formation substrate 12 may be rotated together with the sample stage 11. By rotating the film formation substrate 12, the film thickness formed on the film formation substrate 12 can be made more uniform.

  In the film forming apparatus 1, the control of the supply amount of the silicon particles SE by the sputtering control unit 25 and the control of the supply amount of the mixed gas of nitrogen gas and argon gas by the plasma control unit 38 are performed independently. Is called. That is, control of power, voltage, duty ratio, frequency, etc. in the power supply of the sputtering power source 22 performed by the sputtering control unit 25, the flow rate (supply of argon gas of the first gas supply unit, or a mixed gas of nitrogen gas and argon gas) The control of the microwave power of the microwave source 33 and the control of the flow rate (supply amount) of the mixed gas of nitrogen gas and argon gas of the second gas supply unit 36 performed by the plasma control unit 38. Done independently.

  Next, the direction of the sputtering unit diverging magnetic field DSM and the direction of the plasma supply unit diverging magnetic field DCM will be described with reference to FIG.

  Of the direction of the sputtering unit diverging magnetic field DSM and the direction of the plasma supply unit diverging magnetic field DCM, one is set in the direction toward the film forming substrate 12 and the other is set in the direction opposite to the direction toward the film forming substrate 12. In this case, plasma (ECR plasma EP) of a mixed gas of nitrogen gas and argon gas supplied from the plasma supply unit 30 may not be appropriately supplied to the film formation substrate 12.

The reason is as follows.
Of the direction of the sputter part diverging magnetic field DSM and the direction of the plasma supply part diverging magnetic field DCM, one is the direction toward the film forming substrate 12 and the other is the direction opposite to the direction toward the film forming substrate 12. In this case, the sputter part diverging magnetic field DSM and the plasma supply part diverging magnetic field DCM may be connected. Then, the plasma (ECR plasma EP) of the mixed gas of nitrogen gas and argon gas or the sputtering plasma SP may be confined in the connected magnetic field. When confined in a magnetic field in which plasma of mixed gas of nitrogen gas and argon gas (ECR plasma EP) is connected, the film formation substrate 12 may not be appropriately supplied.

  In the film forming apparatus 1 of the first embodiment, in order to suppress the generation of a connected magnetic field, as shown in FIG. 1, both the direction of the sputtering unit divergent magnetic field DSM and the direction of the plasma supply unit diverging magnetic field DCM are formed. The direction is opposite to the direction toward the film substrate 12. By setting the direction of the sputtering unit diverging magnetic field DSM and the direction of the plasma supplying unit diverging magnetic field DCM in this way, the sputtering unit diverging magnetic field DSM and the plasma supplying unit diverging magnetic field DCM are repelled, and the connected magnetic field The occurrence of is suppressed.

  Note that the direction of the sputtered portion diverging magnetic field DSM depends on the polarity of the outer magnet 23A. The outer magnet 23A has a wider upper surface and lower surface than the inner magnet 23B. Furthermore, the outer magnet 23A is a magnet made of the same material as the inner magnet 23B. Therefore, the direction of the sputter part diverging magnetic field DSM is directed to the S pole, which is the upper magnetic pole of the outer magnet 23A. The direction of the plasma supply unit divergent magnetic field DCM is determined by the direction of the current flowing through the plasma supply magnetic field generating coil 32.

  The film forming apparatus 1 according to the first embodiment is arranged in a sample chamber 10 and a sample chamber 10, and a sample table 11 on which a film forming substrate 12 can be arranged, and a sample chamber 10. It has a first target material placement portion 21 capable of placing the target material 26 contained therein, a sputtering power source 22 for generating the sputtering plasma SP, and a first gas supply portion 24, and the ions of the sputtering plasma SP are used as the first ions. A sputtering unit 20 for supplying silicon particles SE to the film-forming substrate 12 by colliding with the target material 26 and scattering silicon particles SE, and a sputter control for controlling the supply amount of silicon particles in the sputtering unit 20 Unit 25 and a mixed gas of nitrogen gas and argon gas are supplied, and a mixed gas of nitrogen gas and argon gas is utilized by utilizing electron cyclotron resonance A plasma generation chamber 31 for generating high-density plasma, which is connected to the sample chamber 10 through a plasma supply port 37, and a microwave introduction window 35 disposed at a position facing the plasma supply port And a microwave waveguide 34 for introducing a microwave into the plasma generation chamber 31, and a plasma of a mixed gas of nitrogen gas and argon gas generated in the plasma generation chamber 31. A plasma supply unit 30 for supplying the substrate 12 for film formation and a plasma control unit 38 for controlling the plasma supply amount of the plasma generating gas in the plasma supply unit 30. Control of supply amount and control of plasma supply amount of mixed gas of nitrogen gas and argon gas by plasma control unit 38 are independent. Is a film-forming apparatus which is carried out Te. Therefore, an ECR film forming apparatus and an ECR film forming method having a high degree of freedom and a simple structure can be provided. For example, even if the tolerance of the deviation of the thickness of the film to be formed changes, it is easy to cope with it.

  In the film forming apparatus 1 of the first embodiment, the sputter unit 20 includes a sputter unit divergent magnetic field that is a divergent magnetic field formed between the sputtering magnetic field SM for performing magnetron sputtering and the film forming substrate 12. The plasma supply unit 30 is formed between the electron cyclotron resonance magnetic field SDM for generating electron cyclotron resonance and the film formation substrate 12. A plasma supply magnetic field generating coil 32 for generating a plasma supply part divergent magnetic field DCM, which is a divergent magnetic field, and the direction of the sputter part divergent magnetic field DSM and the direction of the plasma supply part divergent magnetic field are both directed toward the film formation substrate 12. The direction is opposite to the direction. Therefore, the plasma (ECR plasma EP) of the mixed gas of nitrogen gas and argon gas supplied from the plasma supply unit 30 is more appropriately supplied to the film formation substrate 12. Further, the silicon particles SE are more appropriately supplied to the film formation substrate 12.

In the film forming apparatus 1 of the first embodiment, the following film forming method is performed.
A deposition substrate placement step for placing the deposition substrate 12 on the sample stage 11 in the sample chamber 10; a first target material placement step for placing the target material 26 containing silicon in the target material placement portion 21; A sputtering plasma generation step for generating a sputtering plasma SP, and ions of the sputtering plasma SP collide with the target material 26 to scatter silicon particles SE, thereby supplying silicon particles to the film formation substrate 12. A first sputtering process, a first sputtering control process for controlling the supply amount of silicon particles SE in the first sputtering process, an oxygen gas is supplied to the plasma generation chamber 31, and the plasma generation chamber 31 is passed through a microwave introduction window. Mixing of nitrogen gas and argon gas by introducing microwaves into and utilizing electron cyclotron resonance And a plasma supply step of supplying a plasma of a mixed gas of nitrogen gas and argon gas generated in the plasma generation chamber 31 to the film formation substrate 12 from a plasma supply port at a position facing the microwave introduction window; A plasma supply control step for controlling the supply amount of plasma of a mixed gas of nitrogen gas and argon gas in the plasma supply step, and the control of the supply amount of silicon particles SE and the plasma supply control in the first sputter control step The plasma supply amount of the mixed gas of nitrogen gas and argon gas in the process is controlled independently, and a silicon nitride film (a film of a compound of silicon and nitrogen contained in the nitrogen gas) is formed on the deposition substrate 12. A film forming method for forming a film. Therefore, an ECR film forming apparatus and an ECR film forming method having a high degree of freedom and a simple structure are provided. For example, even if the tolerance of the deviation of the thickness of the film to be formed changes, it is easy to cope. Note that the film of a compound of silicon and nitrogen contained in a nitrogen gas means a film containing a compound of silicon and nitrogen contained in a mixed gas (an element contained in a plasma generating gas) as a main component. To do.

  Further, in the film forming method performed in the film forming apparatus 1 of the first embodiment, the sputter part divergence which is a divergent magnetic field formed between the sputtering magnetic field SM for performing magnetron sputtering and the film forming substrate 12 is used. A sputtering magnetic field generating step for generating a magnetic field DSM, an electron cyclotron resonance magnetic field CM for generating electron cyclotron resonance, and a plasma supply unit divergence which is a divergent magnetic field formed between the film formation substrate 12 A plasma supply magnetic field generation step for generating a magnetic field DCM, and both the direction of the sputtering unit diverging magnetic field DSM and the direction of the plasma supply unit diverging magnetic field DCM are opposite to the direction toward the film forming substrate 12. . Therefore, the plasma (ECR plasma EP) of the mixed gas of nitrogen gas and argon gas supplied from the plasma supply unit 30 is more appropriately supplied to the film formation substrate 12.

  In the film forming apparatus 1 of the first embodiment, the pressure in the sample chamber is kept substantially uniform. Therefore, simpler film formation can be realized.

  In the film forming apparatus 1 of the first embodiment, the plasma supply direction of the mixed gas of nitrogen gas and argon gas by the plasma supply unit 30 is inclined with respect to the normal line NL of the film forming substrate 12. Therefore, it is possible to realize film formation with higher accuracy.

[Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 3 is a sectional view of a film forming apparatus 1A according to the second embodiment of the present invention. The second embodiment will be described mainly with respect to differences from the first embodiment, and detailed description of the same configuration as the first embodiment will be omitted. For the points that are not particularly described, the description of the first embodiment is applied as appropriate. Further, in FIG. 3, illustration of magnetic fields (sputtering magnetic field SM, sputtered portion diverging magnetic field DSM, electron cyclotron resonance magnetic field CM and sputtered portion diverging magnetic field DSM) and plasma (sputtering plasma SP and ECR plasma EP) are omitted. ing.

  In the film forming apparatus 1A, the sputtering unit 20 includes a target material placement unit 21, a sputtering power source 22, a sputtering magnetic field generation magnet 23, a first gas supply unit 24, and a target moving unit 27. The target material placement unit 21, the sputtering power source 22, the sputtering magnetic field generating magnet 23, and the first gas supply unit 24 are the same as those of the film forming apparatus 1 of the first embodiment.

  The target moving unit 27 is a table for moving the target material arranging unit 21. The target moving unit 27 is disposed below the sputtering magnetic field generating magnet 23. The target moving unit 27 is movable substantially parallel (or accurately parallel) to the normal line NL of the film formation substrate 12. Therefore, either or both of the distance and the angle in the vertical direction (Y direction in FIG. 3) between the deposition substrate 12 and the target material 26 can be changed.

  Further, the target moving unit 27 moves substantially perpendicular (or perpendicular) to the normal line NL of the film forming substrate 12 to thereby move the film forming substrate 12 and the target material 26 in the lateral direction (X in FIG. 3). Either or both of the (direction) distance and angle can be changed. Further, the target moving unit 27 can be moved in an inclined manner with respect to the normal line NL by changing the distances in the Y direction and the X direction.

  According to the film forming apparatus 1A of the second embodiment, film formation with a higher degree of freedom becomes possible.

[Third Embodiment]
Next, a third embodiment of the present invention will be described with reference to FIG. FIG. 4 is a sectional view of a film forming apparatus 1B according to the third embodiment of the present invention. The third embodiment will be described mainly with respect to differences from the first embodiment or the second embodiment, and detailed description of the same configuration as the first embodiment or the second embodiment will be omitted. For points that are not particularly described, the description of the first embodiment or the second embodiment is applied as appropriate. Also, in FIG. 4, illustration of magnetic fields (sputtering magnetic field SM, sputtered portion diverging magnetic field DSM, electron cyclotron resonance magnetic field CM and sputtered portion diverging magnetic field DSM) and plasma (sputtering plasma SP and ECR plasma EP) are omitted. ing.

  The film forming apparatus 1 </ b> B of the third embodiment further includes a second sputtering unit 40 and a second sputtering control unit 45. That is, the film forming apparatus 1 of the first embodiment and the film forming apparatus 1A of the second embodiment have one sputter unit, whereas the film forming apparatus 1B of the third embodiment has the sputter unit 20 and Two sputter units, the second sputter unit 40, are provided. The second sputtering unit 40 includes a second target material arranging unit 41, a second sputtering power source 42, and a second sputtering magnetic field generating magnet 43. The second target material 46 is arranged in the second target material arrangement unit 41. The second sputtering unit 40 shares the first gas supply unit 24 with the sputtering unit 20. The second sputtering power source 42 and the first gas supply unit 24 correspond to a preferred example of the second sputtering plasma generation unit. The polarities of the sputtering magnetic field generating magnet 23 and the second sputtering magnetic field generating magnet 43 depend on the distance relationship between the plasma supply unit 30, the sputtering magnetic field generating magnet 23, and the second sputtering magnetic field generating magnet 43. Accordingly, since the optimum one can be set as appropriate, the polarities in FIG. 4 are not shown.

  The second target material 46 is, for example, silicon like the target material 26. The second target material 46 may be a material other than silicon, for example, aluminum or tantalum. Aluminum, tantalum, and the like correspond to a suitable example of the second element in the claims. Further, the second sputtering control unit 45 controls the power, voltage, duty ratio and the like in the power supply of the second sputtering power source 42. Therefore, the second sputtering control unit 45 can control the supply amount of the silicon particles SE2. Further, the control of the supply amount of silicon particles SE by the sputter control unit 25 and the control of the supply amount of silicon particles SE2 by the second sputter control unit 45 may be performed independently as necessary.

  According to the film forming apparatus 1B of the third embodiment, film formation with a higher degree of freedom becomes possible.

  Heretofore, the first to third embodiments of the present invention have been described. However, the present invention is not limited to the above-described embodiments, and can be variously modified within the technical scope described in the claims.

  In the first to third embodiments, the direction of the sputtering unit diverging magnetic field DSM and the direction of the plasma supply unit diverging magnetic field DCM are both set in the direction opposite to the direction toward the film forming substrate 12. It is not limited to. Both the direction of the sputter unit diverging magnetic field DSM and the direction of the plasma supply unit diverging magnetic field DCM may be set in a direction toward the film forming substrate 12. More specifically, the upper side of the outer magnet 23A is an N pole, the lower side is an S pole, the upper side of the inner magnet 23B is an S pole, and the lower side is an N pole. Further, the direction of the current flowing through the plasma supply magnetic field generating coil 32 is opposite to the direction of the first to third embodiments. That is, one of the direction of the sputtering unit diverging magnetic field DSM and the direction of the plasma supply unit diverging magnetic field DCM is set to the direction toward the film forming substrate 12 and the other is set to the direction opposite to the direction toward the film forming substrate 12. If it is not done, it is good.

  In 1st Embodiment-3rd Embodiment, although the outer magnet 23A and the inner magnet 23B were comprised with the same material, it is not limited to this. The outer magnet 23A and the inner magnet 23B may not be made of the same material. The sputtering magnetic field generating magnet 23 composed of the outer magnet 23A and the inner magnet 23B is configured to generate the sputtering magnetic field SM to the extent that magnetron sputtering is performed in the sputtering unit 20. That's fine.

  In the first to third embodiments, a mixed gas of nitrogen gas and argon gas is used as the plasma generating gas, but the present invention is not limited to this. The plasma generating gas may be a reactive gas such as oxygen gas, a mixed gas of oxygen gas and argon gas, or an inert gas only. When oxygen gas or a mixed gas of oxygen gas and argon gas is used, a silicon oxide film is formed on the film formation substrate 12. When an inert gas is used as the plasma generating gas and only the inert gas is supplied from the first gas supply unit 24, a silicon film is formed on the film formation substrate 12. This silicon film corresponds to a preferred example of the first element film in the claims. Note that the silicon film (first element film) means a film containing silicon (first element) as a main component.

  Further, when an inert gas is used as the plasma generating gas, and when a mixed gas of nitrogen gas and argon gas is supplied from the first gas supply unit 24, a silicon nitride film is formed on the film forming substrate 12. Can be formed. Further, when an inert gas is used as the plasma generating gas, and when a mixed gas of oxygen gas and argon gas is supplied from the first gas supply unit 24, a silicon oxide film is formed on the film forming substrate 12. Can be formed.

  In the first to third embodiments, the sputter unit 20 and the second sputter unit 40 are both parts that perform DC sputtering, but may be parts that perform RF sputtering. Further, one of the sputter unit 20 and the second sputter unit 40 may be a part that performs DC sputtering, and the other may be a part that performs RF sputtering.

  In the first embodiment and the second embodiment, silicon is used as the target material 26, but the present invention is not limited to this. Aluminum, tantalum, or the like can be used as the target material 26. In the third embodiment, the target material 26 and the second target material are both silicon, but are not limited thereto. The target material 26 and the second target material 46 may be materials other than silicon (for example, aluminum, tantalum, etc.). The target material 26 and the second target material 46 may be the same material or different materials.

  In the second embodiment, the target moving unit 27 is movable in parallel to the direction in which the silicon particles SE are supplied, and is perpendicular or inclined with respect to the direction in which the silicon particles SE are supplied. Although it was movable, it is not limited to this. The target moving unit 27 may be movable only in parallel to the direction in which the silicon particles SE are supplied. Further, the target moving unit 27 may be movable only in a direction perpendicular to or inclined with respect to the direction in which the silicon particles SE are supplied.

DESCRIPTION OF SYMBOLS 1, 1A, 1B Film-forming apparatus 10 Sample chamber 11 Sample stand 12 Film-forming substrate 13 Vacuum pump 20 Sputter part 21 Target arrangement stand 22 Sputter power supply (first sputter plasma generating part)
23 Magnetic field generation magnet for sputtering (first sputtering magnetic field generator)
23A outer magnet 23B inner magnet 24 first gas supply unit (first sputtering plasma generation unit, second sputtering plasma generation unit)
25 Sputter control unit 30 Plasma supply unit 31 Plasma generation chamber 32 Magnetic field generation coil for plasma supply (magnetic field generation unit for plasma supply)
33 Microwave source 34 Microwave waveguide 35 Microwave introduction window 36 Second gas supply unit 37 Plasma supply port 38 Plasma control unit 40 Second sputter unit 41 Second target placement table 42 Second sputter power supply (second sputter plasma generation Part)
43 Magnet for generating magnetic field for second sputtering 45 Second sputtering control unit SM Magnetic field for sputtering DSM Sputtering unit divergent magnetic field CM Electron cyclotron resonance magnetic field DCM Plasma supply unit diverging magnetic field

Claims (15)

A sample chamber;
A sample stage arranged in the sample chamber and capable of arranging a film-forming substrate;
A first target material placement portion that is placed in the sample chamber and is capable of placing a first target material containing a first element; and a first sputtering plasma generation portion that generates sputtering plasma; A first sputtering unit for supplying particles of the first element to the film-forming substrate by colliding ions of the sputtering plasma with the first target material and scattering the particles of the first element;
A first sputtering control unit for controlling a supply amount of the particles of the first element in the first sputtering unit;
A plasma generation chamber that is supplied with a plasma generation gas and generates a high-density plasma of the plasma generation gas by utilizing electron cyclotron resonance, and is connected to the sample chamber via a plasma supply port And a microwave waveguide connected to the plasma generation chamber via a microwave introduction window disposed at a position facing the plasma supply port, and for introducing a microwave into the plasma generation chamber. A plasma supply unit for supplying high-density plasma of the plasma generation gas generated in the plasma generation chamber to the film formation substrate;
A plasma control unit for controlling a supply amount of high-density plasma of the plasma generating gas in the plasma supply unit,
The film forming apparatus in which the control of the supply amount of the first element particles by the first sputtering control unit and the control of the supply amount of the high density plasma of the plasma generating gas by the plasma control unit are performed independently. The first sputtering part generates a first sputtering magnetic field for performing magnetron sputtering and a first sputtering part diverging magnetic field that is a diverging magnetic field formed between the film forming substrate and the first sputtering part. A magnetic field generator for
The plasma supply unit generates a plasma supply magnetic field for generating a plasma supply unit divergent magnetic field, which is a divergent magnetic field formed between the electron cyclotron resonance magnetic field for generating electron cyclotron resonance and the film formation substrate. Part
The direction of the first sputter unit diverging magnetic field and the direction of the plasma supply unit diverging magnetic field are both directed toward the film forming substrate, or both are opposite to the direction toward the film forming substrate. Item 2. The film forming apparatus according to Item 1.   The film forming apparatus according to claim 1, wherein the pressure in the sample chamber is substantially uniform.   The film forming apparatus according to claim 1, wherein a supply direction of the high-density plasma of the plasma generating gas by the plasma supply unit is inclined with respect to a normal line of the film forming substrate. .   The first target material disposition portion moves substantially parallel to the normal line of the film formation substrate, whereby one or both of the distance and the angle between the film formation substrate and the first target material. The film forming apparatus according to claim 1, wherein the film forming apparatus can be changed.   The first target material placement portion moves in a direction substantially perpendicular to or substantially inclined with respect to a normal line of the film formation substrate, so that any one of a distance and an angle between the film formation substrate and the first target material can be obtained. Either or both can be changed. The film forming apparatus according to any one of claims 1 to 5.   A second target material disposition portion disposed in the sample chamber and capable of disposing a second target material containing the first element or a second element different from the first element; and a second target material generating a sputtering plasma. A sputtering plasma generator, and the ions of the sputtering plasma collide with the second target material, and the particles of the first element or the second element are scattered to disperse the first element or the second element material. The film-forming apparatus of any one of Claims 1-6 provided with the 2nd sputter | spatter part which supplies the particle | grains of a 2nd element to the said film-forming substrate. A second sputtering control unit that controls a supply amount of particles of the first element or the second element in the second sputtering unit,
The control of the supply amount of the one-element particles by the first sputtering control unit and the control of the supply amount of the first element or the second element particles by the second sputtering control unit are performed independently. The film forming apparatus according to claim 7. A deposition substrate placement step for placing a deposition substrate on a sample stage in a sample chamber;
A first target material placement step of placing the first target material containing the first element in the first target material placement portion;
A sputtering plasma generation step for generating sputtering plasma;
A first sputtering step in which ions of the sputtering plasma collide with the first target material and the particles of the first element are scattered to supply the particles of the first element to the deposition substrate;
A first sputtering control step of controlling a supply amount of the particles of the first element in the first sputtering step;
A plasma generating gas is supplied to the plasma generating chamber, a microwave is introduced into the plasma generating chamber through a microwave introduction window, and electron cyclotron resonance is used to generate a high-density plasma of the plasma generating gas. A plasma supply step of supplying a high-density plasma of the plasma generation gas generated in the plasma generation chamber to the film-forming substrate from a plasma supply port at a position facing the microwave introduction window;
A plasma supply control step of controlling a supply amount of high-density plasma of the plasma generating gas in the plasma supply step,
Controlling the supply amount of the first element particles in the first sputtering control step and the supply amount of the high density plasma of the plasma generating gas in the plasma supply control step are performed independently, and the film formation substrate And forming a film of the first element or a film of a compound of the first element and an element contained in the plasma generating gas. A first sputtering magnetic field generating step for generating a first sputtering magnetic field for performing magnetron sputtering and a first sputtering part diverging magnetic field that is a diverging magnetic field formed between the film-forming substrate;
A plasma supply magnetic field generating step for generating an electron cyclotron resonance magnetic field for generating electron cyclotron resonance, and a plasma supply part divergent magnetic field that is a divergent magnetic field formed between the film-forming substrate, and
The direction of the first sputter unit diverging magnetic field and the direction of the plasma supply unit diverging magnetic field are both directed toward the film forming substrate, or both are opposite to the direction toward the film forming substrate. Item 12. The film forming method according to Item 9.   The film forming method according to claim 9, wherein the pressure in the sample chamber is kept substantially uniform.   The film forming method according to claim 9, wherein a high-density plasma supply direction of the plasma generating gas is inclined with respect to a normal line of the film forming substrate.   By moving the first target material substantially parallel to the normal line of the film formation substrate, one or both of the distance and the angle between the film formation substrate and the first target material is changed. The film forming method according to claim 9, comprising a step.   By moving the first target material in a direction substantially perpendicular to or inclined with respect to the normal of the film formation substrate, either one of a distance and an angle between the film formation substrate and the first target material or The film-forming method of any one of Claims 9-13 provided with the process of changing both. A second target material placement step of placing the second target material in the second target material placement portion;
A second sputtering step of supplying particles of the second element contained in the second target material to the deposition substrate by sputtering the second target material with sputtering plasma;
A second sputtering control step of controlling a supply amount of the particles of the second element in the second sputtering step,
The control of the supply amount of the one-element particles by the first sputtering control step and the control of the supply amount of the second-element particles by the second sputtering control step are performed independently. The film forming method according to any one of claims.

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