JP7018533B2 - Method for manufacturing a light emitting device having a curved light emitting surface - Google Patents

Description

The present invention relates to a light emitting device and a method for manufacturing the same. In particular, the present invention relates to a light emitting device having a curved surface.

Research and development of organic EL (Electroluminescence) elements are being actively carried out. The basic configuration of an organic EL element (hereinafter, also referred to as an EL element or a light emitting element) is that a layer containing a luminescent organic compound is sandwiched between a pair of electrodes. By applying a voltage to this device, light emission can be obtained from a luminescent organic compound.

Examples of the light emitting device to which the organic EL element is applied include a lighting device, an image display device in which a thin film transistor is combined, and the like.

Since the organic EL element can be formed in the form of a film, a large-area element can be easily formed, and the utility value as a surface light source that can be applied to lighting or the like is high. For example, Patent Document 1 discloses a lighting fixture using an organic EL element.

Further, since the image display device to which the organic EL element is applied does not require the backlight required for the liquid crystal display device or the like, it is possible to realize a thin, lightweight, high-contrast and low power consumption display device.

When forming an organic EL element, as a method for forming a layer containing a luminescent organic compound on a lower electrode formed on a substrate having an insulating surface, for example, a vacuum vapor deposition method or a coating method is used. Further, as a method for forming the lower electrode and the upper electrode, there are a vacuum vapor deposition method, a sputtering method, a coating method, a printing method and the like.

Further, in recent years, there is a demand for diversification of the shape of the light emitting device. One of them is a light emitting device having a curved surface. By giving the light emitting device a curved surface, the design and versatility are enhanced, and the degree of freedom in the installation location and the shape of the member to be incorporated is increased. For example, it is possible to incorporate a lighting device or a display device along the curved surface of the interior or exterior of a building or an automobile. Further, it can be used for various purposes such as a wearable lighting device such as a wristband, a display device, and a mobile terminal such as a mobile phone or a tablet terminal provided with a display unit having a curved surface.

Japanese Unexamined Patent Publication No. 2009-130132

Here, when the lower electrode constituting the EL element, the layer containing the luminescent organic compound, and the upper electrode are sequentially laminated and formed, it is necessary to make each thickness uniform in the substrate surface. If these thicknesses are not uniform in the substrate surface, the emission luminance may be distributed in the substrate surface. In particular, where the thickness of the layer containing the luminescent organic compound sandwiched between the electrodes is thin, there is a risk that the brightness will increase or short-circuit due to the concentration of the electric field. On the other hand, if this thickness is thick, light emission will occur. The voltage required for this becomes high, the brightness decreases, or a non-light emitting region is formed.

However, when the EL element is formed on a substrate having a curved surface, it is difficult to uniformly form the thickness of the lower electrode constituting the EL element, the layer containing the luminescent organic compound, and the upper electrode. When the vacuum vapor deposition method or the sputtering method is used, the film forming speed of the film formed differs depending on the distance and angle between the vapor deposition source or the target and the surface to be formed. Further, it is extremely difficult to apply the coating method or the printing method to a substrate having a curved surface due to the configuration of the apparatus.

The present invention has been made under such a technical background. Therefore, one of the problems of the present invention is to provide a light emitting device having a curved light emitting surface. Another issue is to provide a highly reliable light emitting device.

One aspect of the present invention solves at least one of the above problems.

In order to solve the above problems, the present invention focuses on the material of the substrate on which the light emitting element is formed. A substrate having plasticity is used as a substrate, and a light emitting element is formed in a state where the substrate is flat, and then the substrate on which the light emitting element is formed is curved and arranged on the surface of a support having a curved surface. .. After that, a protective layer that protects the light emitting element may be formed in that state.

The curved surface in the present specification and the like means a curved surface obtained by deforming the plane without expanding or contracting it. In other words, it refers to a curved surface that can be tangent to a plane at any point on the curved surface. Here, it is assumed that the curved surface in the present specification and the like does not include a curved surface (so-called three-dimensional curved surface) that cannot be obtained by deforming the plane without expanding or contracting it.

Further, the "curved surface" in the present specification and the like is synonymous with the above-mentioned curved surface.

By such a method, it is possible to manufacture a light emitting device such as a lighting device or a display device having a curved light emitting surface.

The manufactured light emitting device can retain its morphology by the plastic substrate even if it is separated from the support after forming the protective layer. Therefore, the light emitting device can be used as a light emitting device having a curved light emitting surface similar to the curved surface of the support.

That is, the light emitting device of one aspect of the present invention covers a light emitting element having a curved surface and having a plasticity, a light emitting element having a light emitting layer between a pair of electrodes formed on the surface of the substrate, and a light emitting element. A sealing layer and a protective layer in contact with the sealing layer are provided.

A light emitting device having such a configuration includes a sealing layer having a curved light emitting surface and covering the light emitting element.
The protective layer in contact with the sealing layer suppresses the diffusion of impurities such as water from the outside, resulting in a highly reliable light emitting device.

Further, the light emitting device of another aspect of the present invention includes a light emitting element and a transistor having a curved surface, a plastic substrate, and a light emitting element formed on the surface of the substrate and having a light emitting layer between a pair of electrodes. It includes a plurality of pixels, a sealing layer that covers the light emitting element, and a protective layer that is in contact with the sealing layer.

Further, as described above, it can be applied to an image display device provided with a plurality of pixels in which a transistor and a light emitting element are combined. Such a light emitting device can be used by being attached to a curved wall surface or ceiling of a building or a vehicle, for example, and can realize an electronic device such as a mobile terminal having a high design.

Further, in the light emitting device of another aspect of the present invention, in any of the above light emitting devices, the substrate is
It is characterized by containing a metal or an alloy.

Further, in the light emitting device of another aspect of the present invention, in any of the above light emitting devices, the substrate is
It is characterized by containing at least one selected from aluminum, copper, iron, nickel, titanium and magnesium.

As described above, by using a metal material or an alloy material having high thermal conductivity for the substrate on which the light emitting device is provided, heat dissipation can be improved. Therefore, even if the light emitting device is used for a long time, the heat generation of the light emitting device can be suppressed, so that the light emitting device can be highly reliable.

Further, the light emitting device of another aspect of the present invention is characterized in that, in any of the above light emitting devices, a flattening layer is provided between the light emitting element and the substrate.

Further, it is preferable to provide the flattening layer on the substrate side of the light emitting element in this way because the uniformity of the thickness of the layer constituting the light emitting element is improved. In particular, in a substrate containing a metal or alloy material, the surface undulations are often large, so it is particularly effective to provide a flattening layer.

Further, the light emitting device of another aspect of the present invention is characterized in that, in any of the above light emitting devices, the flattening layer contains a heat conductive material.

Further, the light emitting device of another aspect of the present invention is characterized in that, in any of the above light emitting devices, the flattening layer contains a resin in which particles made of a metal or an alloy are dispersed.

Further, by using a thermally conductive material for the flattening layer closer to the light emitting element in this way, it is possible to suppress heat generation from the light emitting element. Further, in particular, when a thermally conductive substrate containing a metal material or an alloy material is used, heat generation from the light emitting element can be transmitted to the substrate through the flattening layer, so that heat generation of the light emitting device is further suppressed. be able to.

Further, the light emitting device of another aspect of the present invention is characterized in that, in any of the above light emitting devices, the protective layer is configured to include a glass layer.

Further, by applying the glass layer to the protective layer that protects the light emitting element in this way, it is preferable because the diffusion of impurities such as water and oxygen can be extremely suppressed.

Further, the light emitting device of another aspect of the present invention is characterized in that, in any of the above light emitting devices, the protective layer is a laminated body in which a glass layer, an adhesive layer, and a resin layer are sequentially laminated. ..

Further, by forming a resin layer laminated on a glass layer as a protective layer in this way,
It is possible to suppress the occurrence of cracks and cracks in the glass layer, and it is possible to obtain a high-strength light emitting device. Further, at this time, it is particularly preferable to provide the glass layer so as to face the light emitting element because the diffusion of impurities from the resin layer can be suppressed.

Further, in the method for manufacturing a light emitting device according to one aspect of the present invention, a substrate having plasticity is arranged so that one surface is flat, and a first electrode, a light emitting layer, and a first light emitting layer are placed on one surface of the substrate. The process of forming a light emitting element by laminating the two electrodes in order and the substrate on which the light emitting element is formed are placed on a support having a curved surface, which is opposite to one surface on which the light emitting element is formed. Facing the support
The process of arranging the support by bending it along the curved surface, the process of dropping a curable material on one surface of the substrate, and the process of dripping the curable material on the region where the light emitting element of the substrate is not provided. A protective layer is placed so that the material and part of the edge are in contact, and in the area where the protective layer and the curable material are in contact.
A step of fixing the protective layer and a step of bending the protective layer along one surface of the substrate so that the surface of the protective layer facing the substrate is in contact with the curable material in the region where the light emitting element is provided. It comprises a step of curing a curable material to form a sealing layer.

By such a method, a light emitting device having a curved light emitting surface can be manufactured. Further, when the light emitting element is formed, the surface to be formed is made flat, so that the uniformity of the thickness of the layer constituting the light emitting element is enhanced, and the light emission luminance in the substrate surface can be made uniform. Further, when forming the protective layer, only the end portion thereof is first adhered, and then the protective layer is curved along the substrate surface.
By adhering to the thermosetting material to be the sealing layer later, it is possible to suppress the mixing of air bubbles or the like between the protective layer and the sealing layer, and to produce a highly reliable light emitting device.

Further, in another method of manufacturing the light emitting device of the present invention, a substrate having plasticity is arranged so that one surface is flat, and a first electrode and a light emitting layer are provided on one surface of the substrate. , The process of forming a light emitting element by laminating the second electrodes in order, and the substrate on which the light emitting element is formed are placed on a support having a curved surface, which is opposite to the one surface on which the light emitting element is formed. A step of arranging the support by bending it along the curved surface of the support so that the surface of the support faces the support, a step of dropping a photocurable material on one surface of the substrate, and a light emitting element of the substrate. A protective layer is placed so that the photocurable material and a part of the end are in contact with each other on the region where the protective layer is not provided, and the region where the protective layer and the photocurable material are in contact is irradiated with light to be photocured. The process of curing a part of the material to form a part of the sealing layer that adheres the protective layer and the part of the substrate, and the surface of the protective layer facing the substrate of the protective layer are the light emitting elements. A step of bending along one surface of the substrate so as to be in contact with the photocurable material in the provided region, and irradiating the uncured portion of the photocurable material with light to form a sealing layer. Process and
Have.

Further, by such a method, since a fixing tool for fixing a part of the protective layer and the substrate is not required, a light emitting device having a curved light emitting surface can be easily manufactured.

Further, in another method of manufacturing the light emitting device of the present invention, a layer to be peeled is formed on the flat surface of a support substrate provided with a flat surface, and a light emitting layer is formed on the layer to be peeled between a pair of electrodes. A process of forming a plurality of pixels including a light emitting element and a transistor, and a cover in which the peeled layer on which the pixels are formed are peeled off from the support substrate, and the pixels are formed on one surface of the substrate having plasticity. The process of transferring the release layer and the substrate with the pixels are placed on the support with the curved surface and on the curved surface of the support so that the surface opposite to the one surface with the pixels faces the support. The process of arranging the curable material curved along the surface, the process of dropping the curable material onto one surface of the substrate, and the process of dropping the curable material and a part of the end portion on the region where the pixels of the substrate are not provided. In the area where the protective layer is arranged so as to be in contact with each other and the protective layer and the curable material are in contact with each other, the step of fixing the protective layer and the surface of the protective layer facing the substrate of the protective layer are provided in the region where the pixels are provided. It has a step of bending along one surface of the substrate so as to be in contact with the curable material, and a step of curing the curable material to form a sealing layer.

Further, by such a method, it is possible to form an image display device that is curved and has a display unit composed of a plurality of pixels. In addition to the light emitting element, the surface to be formed can be made flat when the transistor is formed, so that the surface can be easily formed and the variation in the electrical characteristics of the transistor is suppressed, resulting in a highly reliable display device. be able to.

Further, in another method of manufacturing the light emitting device of the present invention, a layer to be peeled is formed on the flat surface of a support substrate provided with a flat surface, and a light emitting layer is formed on the layer to be peeled between a pair of electrodes. A process of forming a plurality of pixels including a light emitting element and a transistor, and a cover in which the peeled layer on which the pixels are formed are peeled off from the support substrate, and the pixels are formed on one surface of the substrate having plasticity. The process of transferring the release layer and the substrate with the pixels are placed on the support with the curved surface and on the curved surface of the support so that the surface opposite to the one surface with the pixels faces the support. A process of arranging the material by bending it along a process, a process of dropping a photocurable material onto one surface of the substrate, and a process of dropping the photocurable material on one surface of the substrate, and one of the photocurable material and one end on a region where the pixels of the substrate are not provided. The protective layer is arranged so that the portions are in contact with each other, and the area where the protective layer and the photocurable material are in contact is irradiated with light to cure a part of the photocurable material.
The step of forming a part of the sealing layer for adhering a part of the protective layer and the substrate, and the surface of the protective layer facing the substrate are in contact with the photocurable material in the region where the pixels are provided. As described above, it has a step of bending along one surface of the substrate and a step of irradiating an uncured portion of the photocurable material with light to form a sealing layer.

Further, in this way, it is preferable to fix a part of the protective layer using a photocurable material.

Further, after the light emitting device is manufactured, it may be used by removing it from the support, or it may be used in a state of being held by the support. For example, a member that becomes a housing of a lighting device or an electronic device may be used as a support, a light emitting device may be produced on the support, and then the light emitting device may be incorporated into the lighting device or the electronic device as it is.

Further, the method for manufacturing a light emitting device according to another aspect of the present invention is characterized in that, in any of the above methods for manufacturing a light emitting device, a substrate containing a metal or an alloy is used as the substrate.

Further, in the method for producing a light emitting device according to another aspect of the present invention, at least one selected from aluminum, copper, iron, nickel, titanium, and magnesium is used as a substrate in any of the above methods for producing a light emitting device. It is characterized by using a substrate containing the mixture.

Further, by using a metal material or an alloy material having high thermal conductivity as the substrate as described above, it is possible to manufacture a light emitting device having improved heat dissipation. In addition, a flattening film on the surface on which the elements of the substrate are formed,
Alternatively, a flattening film containing a material having thermal conductivity may be used.

Further, the method for producing a light emitting device according to another aspect of the present invention is characterized in that, in any of the above methods for producing a light emitting device, a configuration including a glass layer is used as a protective layer.

Further, in the method for producing a light emitting device according to another aspect of the present invention, in any of the above methods for producing a light emitting device, a laminated body in which a glass layer, an adhesive layer, and a resin layer are sequentially laminated on a protective layer is formed. It is characterized by being used.

Further, by such a manufacturing method, the diffusion of impurities such as water and oxygen is suppressed, and a highly reliable light emitting device can be manufactured. Further, by using a laminated body of glass and resin, a light emitting device having increased mechanical strength can be manufactured.

In addition, in this specification, an EL layer means a layer (also referred to as a light emitting layer) which is provided between a pair of electrodes of a light emitting element and contains at least a light emitting organic compound, or a laminated body containing a light emitting layer. ..

In the present specification, the light emitting device refers to an image display device, a light emitting device, or a light source (including a lighting device). In addition, a connector to the light emitting device, for example, FPC (Flexi)
ble printed circuit board) or TAB (Tape Automat)
ed Bonding) Tape or TCP (Tape Carrier Packa)
COG (Chip On Gla) on a module to which ge) is attached, a module to which a printed wiring board is provided at the end of TAB tape or TCP, or a substrate on which a light emitting element is formed.
All modules in which an IC (integrated circuit) is directly mounted by the ss) method shall be included in the light emitting device.

According to the present invention, it is possible to provide a light emitting device having a curved light emitting surface. Further, it is possible to provide a highly reliable light emitting device.

The figure explaining the manufacturing method of the light emitting device of one aspect of this invention. The figure explaining the manufacturing method of the light emitting device of one aspect of this invention. The figure explaining the light emitting device of one aspect of this invention. The figure explaining the light emitting device of one aspect of this invention. The figure explaining the manufacturing method of the light emitting device of one aspect of this invention. The figure explaining the manufacturing method of the light emitting device of one aspect of this invention. The figure explaining the application example of the light emitting device of one aspect of this invention. Measurement result of temperature characteristics according to Example 1. A photographic image of the light emitting device according to the second embodiment.

The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that the form and details of the present invention can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention is not construed as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same reference numerals are commonly used between different drawings for the same parts or parts having similar functions, and the repeated description thereof will be omitted.

In addition, in each figure described in this specification, the size of each structure, the thickness of a layer, or a region is referred to as a region.
May be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

(Embodiment 1)
In the present embodiment, a light emitting device according to one aspect of the present invention and a method for manufacturing the same will be described with reference to the drawings.

[Example of manufacturing method of light emitting device]
Hereinafter, a method for manufacturing a light emitting device according to an aspect of the present invention will be described with reference to FIGS. 1 and 2. 1 (A) to 1 (D) and FIGS. 2 (A) to 2 (E) are a schematic view of the upper surface at each stage and a schematic cross-sectional view cut by the cutting lines AB shown in the schematic view of the upper surface. ..

First, the substrate 101 is prepared. For the substrate 101, a material having plasticity is used, and a substrate having at least a flat surface to be formed is used.

Further, it is preferable to use a metal or alloy material as the substrate 101 because the heat dissipation property against heat generation from the light emitting element formed later is improved. As the material used for the substrate 101, a metal material such as aluminum, copper, iron, nickel, titanium, magnesium, or an alloy material containing the same can be used. Further, stainless steel or duralumin may be used.

Further, it is preferable to use a substrate that has been subjected to an insulating treatment by oxidizing the surface of the conductive substrate or forming an insulating film on the surface. For example, the insulating film may be formed by an electrodeposition method, a coating method such as a spin coating method or a dip method, a vapor deposition method, or a sputtering method, or the insulating film may be left or heated in an oxygen atmosphere, or the like. An oxide film may be formed on the surface of the substrate 101 by a known method such as an anodizing method.

Subsequently, the flattening layer 113 is formed on the surface to be formed of the substrate 101. The flattening layer 113 is formed for the purpose of covering the uneven shape of the surface of the substrate 101 and flattening it. As the flattening layer 113, an insulating material can be used, and for example, an organic material such as polyimide, acrylic, epoxy, or benzocyclobutene can be used.

The flattening layer 113 can be formed by using a coating method such as a spin coating method or a dip method, a ejection method such as an inkjet method or a dispensing method, or a printing method such as screen printing.

Further, an organic resin in which particles made of a metal or alloy material are dispersed can also be used for the flattening layer 113. By using the flattening layer 113 in which the conductive material is dispersed in this way, heat generated from the light emitting element formed later can be efficiently conducted to the substrate 101, so that heat dissipation can be further improved. .. Further, in order to improve the flatness or the insulating property, the organic resin may be further laminated on the organic resin in which the conductive particles are dispersed.

When the surface of the substrate 101 is insulated and its flatness is high, the flattening layer 1
It is not necessary to provide 13.

Subsequently, the first electrode layer 103 and the wiring 111 are formed on the flattening layer 113.

A part of the first electrode layer 103 is one of the electrodes constituting the light emitting element. Wiring 1
Reference numeral 11 is a wiring for supplying electric power to the second electrode constituting the light emitting element formed later. Here, each of the first electrode layer 103 and the wiring 111 also functions as a take-out electrode for partially supplying electric power from the outside.

The first electrode layer 103 and the wiring 111 may be formed of the same material or may be made of different materials. Further, at least in the region where the light emitting element is formed on the first electrode layer 103,
A material that is reflective to the light emitted from the EL layer 105 that is formed later is used. Further, a material having high light reflectivity may be laminated on the region where the light emitting element is formed on the first electrode layer 103.

The materials used for the first electrode layer 103 and the wiring 111 include, for example, aluminum, gold, and the like.
Metals such as platinum, silver, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium, or alloys containing these can be used. Further, lanthanum, neodymium, germanium and the like may be added to the metal or alloy containing these metal materials. In addition, aluminum-containing alloys such as aluminum-titanium alloys, aluminum-nickel alloys, aluminum-neodim alloys (aluminum alloys), silver-copper alloys, and silver-containing alloys such as silver-magnesium alloys are used. You can also do it. Silver-copper alloys are preferred because of their high heat resistance. Further, by laminating a metal film or a metal oxide film in contact with the aluminum alloy film, oxidation of the aluminum alloy film can be suppressed. Examples of the material of the metal film and the metal oxide film include titanium and titanium oxide. Further, the film made of the translucent material and the film made of the metal material may be laminated. For example, a laminated film of silver and indium tin oxide, a laminated film of an alloy of silver and magnesium and indium tin oxide can be used.

The first electrode layer 103 and the wiring 111 can be formed by using a printing method such as a sputtering method, a vacuum vapor deposition method, a screen printing method, a ejection method such as an inkjet method or a dispensing method, or a plating method. In particular, it is preferable to use a screen printing method to form these at the same time.

A schematic top view and a schematic cross-sectional view at this stage correspond to FIG. 1 (A).

Subsequently, a part of the end portion of the first electrode layer 103 and the wiring 111 is covered, and the first electrode layer 1 is covered.
The insulating layer 115 is formed with an opening that exposes a part of the 03 and the wiring 111.

The insulating layer 115 can be formed by using an ejection method such as an inkjet method or a dispensing method, a printing method such as screen printing, or the like. Further, a photolithography method may be used.

The insulating layer 115 has a curved surface having a radius of curvature (0.2 μm to 3 μm) at the upper end or the lower end of the insulating layer 115 in order to improve the covering property of the second electrode layer 107 to be formed later. It is preferable to let it. The material of the insulating layer 115 is the same as that of the flattening layer 113, a negative photosensitive resin that becomes insoluble in the etchant when irradiated with light, or a negative photosensitive resin that becomes soluble in the etchant when irradiated with light. Organic compounds such as positive photosensitive resins and inorganic compounds such as silicon oxide and silicon oxynitride can be used.

A schematic top view and a schematic cross-sectional view at this stage correspond to FIG. 1 (B).

Subsequently, the EL layer 105 is formed on the first electrode layer 103. The EL layer 105 is formed by using a vacuum vapor deposition method, a ejection method such as an inkjet method or a dispense method, or a coating method such as a spin coating method.

The EL layer 105 may include at least a layer containing a luminescent organic compound (hereinafter, also referred to as a light emitting layer), and may be composed of a single layer or may have a plurality of layers laminated. As an example of the configuration composed of a plurality of layers, a configuration in which a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer are laminated from the anode side can be mentioned as an example. It should be noted that all of these layers except the light emitting layer do not necessarily have to be provided in the EL layer 105. Further, these layers may be provided in an overlapping manner. Specifically, a plurality of light emitting layers may be provided in the EL layer 105 in an overlapping manner, or a hole injection layer may be provided in an overlapping manner in the electron injection layer. Further, in addition to the charge generation layer, other configurations such as an electron relay layer can be appropriately added as the intermediate layer. Further, for example, a configuration in which a plurality of light emitting layers exhibiting different light emitting colors are laminated may be used. For example, white light emission can be obtained by laminating two or more light emitting layers having a complementary color relationship.

A schematic top view and a schematic cross-sectional view at this stage correspond to FIG. 1 (C).

Subsequently, a second electrode layer 107 that covers the EL layer 105 and is electrically connected to the wiring 111.
To form.

The second electrode layer 107 uses a material having translucency with respect to light emitted from the EL layer 105.

As the translucent material, indium oxide, indium tin oxide, zinc oxide, zinc oxide, zinc oxide to which gallium is added, and the like can be used. Alternatively, graphene may be used. Further, as the conductive layer, a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, or an alloy containing these can be used. Alternatively, a nitride of these metallic materials (for example, titanium nitride) may be used. When a metal material (or a nitride thereof) is used, it may be made thin enough to have translucency. Further, the laminated film of the above material can be used as the conductive layer. For example, it is preferable to use a laminated film of an alloy of silver and magnesium and indium tin oxide because the conductivity can be enhanced.

The second electrode layer 107 is formed by a vapor deposition method, a sputtering method, or the like. others,
It can be formed by using a ejection method such as an inkjet method, a printing method such as a screen printing method, or a plating method.

When the above-mentioned conductive oxide having translucency is formed by a sputtering method,
When the conductive oxide is formed into a film in an atmosphere containing argon and oxygen, the translucency can be improved.

When the conductive oxide film is formed on the EL layer, the first conductive oxide film formed in an atmosphere containing argon with a reduced oxygen concentration and the film formed in an atmosphere containing argon and oxygen. It is preferable to use the laminated film of the second conductive oxide film because it can reduce the film-forming damage to the EL layer. Here, it is particularly preferable that the purity of the argon gas used for forming the first conductive oxide film is high, and for example, it is preferable to use an argon gas having a dew point of −70 ° C. or lower, preferably −100 ° C. or lower. ..

In this way, the light emitting element 120 in which the first electrode layer 103, the EL layer 105, and the second electrode layer 107 are laminated is formed. Here, the configurations formed on the substrate 101 are collectively referred to as a light emitting device 110.

Further, in each step of forming the light emitting device 110, the substrate 101 is arranged and formed so that the surface to be formed is flat. Therefore, the thickness of each layer constituting the light emitting device 110,
Controllability of shape, position, etc. can be improved. In particular, since the thickness of each of the first electrode layer 103, the EL layer 105, and the second electrode layer 107 constituting the light emitting element 120 can be made uniform, a light emitting device having enhanced uniformity of light emitting luminance is manufactured. can do.

Further, a protective film may be formed on the second electrode layer 107. By forming the protective film, the diffusion of impurities such as water and oxygen to the light emitting element 120 is suppressed, and a highly reliable light emitting device can be obtained. As the protective film, a material having a translucent property and a barrier property against water and oxygen is used. For example, a semiconductor such as silicon or an oxide or a nitride of a metal such as aluminum may be used.

A schematic top view and a schematic cross-sectional view at this stage correspond to FIG. 1 (D).

Subsequently, as shown in FIG. 2A, the substrate 101 on which the light emitting device 110 is formed is arranged on the support 121. For the sake of clarity, the light emitting device 110 will be simplified and specified in the following drawings.

The support 121 comprises a curved surface. Further, it is preferable that the cross section is composed of a continuous curve. FIG. 2A shows a support 121 having a convex arcuate surface shape, but other shapes can be taken. For example, the cross-sectional shape may be an arc shape having a concave shape, a wavy shape, or the like.

The substrate 101 is placed along the curved surface of the support 121. Here, since the substrate 101 has plasticity, its shape can be retained after being curved and arranged along the curved surface of the support 121.

Further, the support 121 and the substrate 101 may be fixed by using an adhesive material or a fixture. When the light emitting device 100 is later removed from the support 121 and used, it is fixed with a weakly viscous adhesive material or a removable fixative.

Here, the radius of curvature of the support 121 to be used can be a radius of curvature of such a size that cracks or cracks do not occur in each layer constituting the light emitting device 110 when the substrate 101 is curved. Further, the thinner each layer constituting the light emitting device 110 is formed, the smaller the radius of curvature of the support can be used.

Subsequently, the sealing material 122 is applied onto the curved substrate 101 (FIG. 2B). Encapsulant 1
The 22 is formed by dropping onto at least a region that covers the light emitting element 120 and a region that later forms a protective layer. At this time, the substrate 1 of the first electrode layer 103 and the wiring 111
Encapsulant 1 so that the area that functions as a take-out electrode provided on the outer peripheral side of 01 is exposed.
22 is applied.

As the sealing material 122, a photocurable organic resin is used. Further, as the sealing material 122, a material having at least translucency against light emitted from the light emitting element after being cured by light irradiation is used.

For example, PVC (polyvinyl chloride), acrylic, polyimide, epoxy resin, silicone resin, PVB (polyvinyl butyral) or EVA (ethylene vinyl acetate) can be used as the sealing material 122.

Subsequently, the protective layer 125 is provided in contact with a part of the sealing material 122 (FIG. 2 (C)).

For the protective layer 125, a material having at least light emission from the light emitting element 120 is used. For example, a sheet-shaped organic resin or a glass material having a thickness sufficient to have flexibility can be used.

It is also possible to use the protective layer 125 by laminating a plurality of layers. In particular, if the structure has a glass layer, the barrier property against water and oxygen can be improved, and a highly reliable light emitting device can be obtained.

In particular, as the protective layer 125, it is preferable to use a sheet in which a glass layer, an adhesive layer, and an organic resin layer are laminated from the side close to the light emitting element. The thickness of the glass layer is 20 μm or more and 20
The thickness is 0 μm or less, preferably 25 μm or more and 100 μm or less. A glass layer having such a thickness can simultaneously realize high barrier property against water and oxygen and flexibility. The thickness of the organic resin layer is 10 μm or more and 200 μm or less, preferably 20 μm or more and 50 μm or less. By providing such an organic resin layer on the outer side of the glass layer, it is possible to suppress cracks and cracks in the glass layer and improve the mechanical strength. By applying such a composite material of a glass material and an organic resin to the protective layer 125, it is possible to obtain an extremely reliable and curved light emitting device.

First, in a region on the substrate 101 at least outside the region where the light emitting element 120 is provided, the protective layer 125 is provided so that its end is in contact with the sealing material 122. At this time, as shown in FIG. 2C, it is preferable that the protective layer 125 does not come into contact with the sealing material 122 except for the end portion.

Subsequently, the region where the protective layer 125 and the sealing material 122 are in contact is irradiated with light 127 to cure the sealing material 122 in the region, and the substrate 101 and the protective layer 125 are adhered to each other. At this time, a part of the region where the sealing material 122 is cured becomes the sealing layer 123.

After that, the protective layer 125 is brought into close contact with the protective layer 125 while being gradually curved with the region where the protective layer 125 and the sealing layer 123 are adhered as a fulcrum. In this way, by adhering the ends of the protective layer 125 once and then gradually adhering them outward from the bonded portion, air bubbles and the like are suppressed from being taken in, and a highly reliable light emitting device is obtained. be able to.

For this bonding, it is preferable to use, for example, a roller-shaped pressing member to roll the bonded portion to the starting point so that the protective layer 125 and the sealing material 122 are brought into close contact with each other. At this time, it is preferable to control the distance between the protective layer 125 and the substrate 101 to be constant.

Subsequently, as shown in FIG. 2D, light 1 is applied to the sealing material 122 from above the protective layer 125.
27 is irradiated to cure the sealing material 122 to form the sealing layer 123.

At this time, the sealing material 122 may be irradiated with light 127 while the protective layer 125 is fixed so as not to be peeled off.

By the above steps, the light emitting device 100 having a curved light emitting surface can be formed on the support 121.

In the above, a photocurable organic resin was used as the material used for the encapsulant 122, but the present invention is not limited to this, and a thermosetting organic resin, a two-component mixed resin, or a cured resin that cures at room temperature is used. Can also be used.

When a thermosetting resin is used for the encapsulant 122, a part of the protective layer 125 is partly encapsulated with the encapsulant 122.
Then, the contacted portion may be locally heated and cured. After that, the protective layer 1
25 may be curved and brought into close contact with the sealing material 122, and then heated as a whole to be cured. As a method of locally heating, the light of the lamp may be locally irradiated, or a heat source such as a heater may be brought closer. As a method for heating the whole, a hot plate or an oven may be used in addition to the lamp and the heater.

When a resin that cures at room temperature is used for the sealing material 122, first, the resin is applied to a region outside the region where the light emitting element 120 is provided in advance, and the resin is brought into close contact with a part of the protective layer 125. It is cured in the state of being. After that, the resin may be applied again to the region overlapping with the light emitting element 120, and the protective layer 125 may be brought into close contact with the resin while being curved and cured.

Further, in the above description, a method of curing the sealing material 122 in close contact with the protective layer 125 in a region outside the region where the light emitting element 120 is provided to bond the protective layer 125 and the substrate 101 has been described. However, the method is not limited to this method as long as the protective layer 125 is fixed so as not to be displaced in the region at least when the protective layer 125 is curved.

For example, after the encapsulant 122 is applied on the substrate 101, the protective layer 125 is placed in close contact with the encapsulant 122 in a region outside the region where the light emitting element 120 is provided, and the end of the protective layer 125 is arranged. The protective layer 125 may be curved in a state where the portion is fixed to the substrate 101 to be brought into close contact with the encapsulant 122, and then the entire encapsulant 122 may be cured. The end of the protective layer 125 is attached to the substrate 10.
As a method of fixing to 1, a method of pressing from above the protective layer 125 using a pressing member, a method of directly fixing the end portion of the protective layer 125 to the support 121 or the substrate 101 using a fixing tool such as tape, etc. There is.

When such a method is used, the type of the curable material used for the encapsulant 122 is not limited, and a photocurable resin, a thermosetting resin, a curable resin that cures at room temperature, or the like can be appropriately used. ..

The light emitting device 100 may be used in a state of being supported by the support 121 as shown in FIG. 2 (D), or may be used alone by being removed from the support 121 as shown in FIG. 2 (E). May be.

When the light emitting device 100 is used in a state of being supported by the support 121, for example, a member that becomes a housing of a lighting device or an electronic device is used as the support 121, and after the light emitting device 100 is manufactured on the support 121. , It may be incorporated into a lighting device or an electronic device as it is.

As described above, by using the material having plasticity for the substrate 101, the step of forming the light emitting device 110 on the substrate 101 can be performed in a state where the surface to be formed is flat, so that the distribution of brightness is improved. It can be a light emitting device.

Further, since the step of bonding the substrate 101 and the protective layer 125 can be performed in a curved state, the stress caused by the protective layer 125 generated after the bonding can be alleviated. Here, for example, when the protective layer 125 is bonded in a flat state and then the entire light emitting device 100 is curved, the protective layer 125 itself, or the sealing layer or the light emitting device fixed to the protective layer 125 is attached. Since a large amount of stress is generated, cracks and cracks occur in these. By adhering the protective layer in such a curved state, such stress can be relieved, so that a highly reliable light emitting device can be obtained.

In particular, when a material containing a glass layer is used as the sealing layer, if it is greatly curved after being bonded in a flat state, even if the sealing layer itself has flexibility, it is sealed. Since the stop layer is adhered to the substrate, the stress applied to the glass layer becomes large, and there is a high possibility that cracks will occur. On the other hand, when the above method is used, since the sealing layer and the substrate are not adhered at the time when the sealing layer is curved, there is no risk of cracking even if the sealing layer is greatly curved, and as a result, a light emitting surface having a small radius of curvature. It is possible to realize a highly reliable light emitting device in which the diffusion of impurities is suppressed by the glass layer.

[Modification example]
Further, by changing the shape of the support 121, it is possible to easily manufacture light emitting devices having various shapes. For example, as shown in FIG. 3, a wave-shaped light emitting device 100 can be used.

Further, in the present embodiment, the upper surface shape of the light emitting device 110 is a quadrangle, but the shape is not limited to this, and light emitting devices having various shapes may be used. Since it can be made into various shapes such as a circle including an ellipse, a figure surrounded by a curve having a different curvature such as a polygon, and a figure surrounded by a curve and a straight line, high design can be realized.

Further, since a sheet-like material can be used as the substrate 101 and the protective layer 125, R.
It is suitable for the all To Roll method, and a large-area light emitting device can be easily manufactured.

This embodiment can be carried out in combination with other embodiments and examples described in the present specification as appropriate.

(Embodiment 2)
In the present embodiment, the case where the image display device is applied as the light emitting device in the method of manufacturing the light emitting device exemplified in the above embodiment will be described with reference to the drawings.

In the following, the parts that overlap with the contents described in the first embodiment will be described by omitting or simplifying the description.

The image display device formed on the plastic substrate 101 includes a plurality of pixels having at least one light emitting element. The image display device is a passive matrix type image display device in which one pixel is composed of one light emitting element, or an active matrix type image display device in which one pixel is composed of a light emitting element and at least one transistor. There is an image display device.

Hereinafter, as an example of an image display device applicable to the method for manufacturing a light emitting device according to one aspect of the present invention, an active matrix type image display device will be described as an example.

[Configuration example]
4 (A) is a part of the pixel of the image display device 150, and FIG. 4 (B) is FIG. 4 (B).
A is a schematic cross-sectional view of a cross section cut along the cutting line CD in A).

In the image display device 150 shown in FIG. 4A, a plurality of source wirings 151 are arranged parallel to each other and separated from each other, and a plurality of gate wirings 15 intersecting with the source wirings 151.
2 are arranged parallel to each other and separated from each other. Further, the area surrounded by the source wiring 151 and the gate wiring 152 becomes one pixel of the image display device 150, and these are arranged in a matrix.

Further, each pixel has a transistor 153, a transistor 154, and a transistor 15.
The light emitting element 120 formed on the 4 is provided.

As the substrate 101, the same substrate as in the first embodiment can be used.

In FIG. 4B, the substrate 101, the adhesive layer 161 provided on the substrate 101, and the adhesive layer 1 are shown.
FIG. 6 shows a schematic cross-sectional view including an insulating layer 163 provided on 61, a transistor 154 formed on the insulating layer 163, and a light emitting element 120 electrically connected to the transistor 154.

The transistor 154 includes a gate electrode layer, a gate insulating layer, a semiconductor layer, and a source electrode layer and a drain electrode layer.

The structure of the transistor constituting the image display device 150 is not particularly limited. For example, it may be a stagger type transistor or an inverted stagger type transistor. again,
It may have a transistor structure of either a top gate type or a bottom gate type transistor.

Further, as the semiconductor material used for the transistor, for example, a semiconductor material such as silicon or germanium may be used, or an oxide semiconductor material containing at least one of indium, gallium, and zinc may be used. Further, the crystallinity of the semiconductor used for the transistor is not particularly limited, and a non-crystalline semiconductor or a semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a partially crystalline region) Either may be used. It is preferable to use a semiconductor having crystallinity because deterioration of transistor characteristics is suppressed.

The light emitting element 120 can have the same configuration as that of the first embodiment, and the first electrode layer 103
, The EL layer 105, and the second electrode layer 107 are laminated in this order. Further, the first electrode 103 has an insulating layer 165 on the source electrode layer or the drain electrode layer of the transistor 154.
, And are electrically connected via an opening provided in the insulating layer 167.

Further, an insulating layer 166 that covers the light emitting element 120 is formed. The insulating layer 166 is provided to prevent impurities such as water and oxygen from diffusing into the light emitting element. Inorganic insulating materials such as semiconductor oxides or nitrides such as silicon or metal oxides or nitrides such as aluminum can be used.

The light emitting element 120 of the adjacent pixel includes an EL layer 105 exhibiting a different light emitting color. For example, an image display device 150 capable of full-color display can be obtained by using a light emitting element 120 provided with an EL layer 105 exhibiting emission colors of red (R), green (G), and blue (B), respectively. Further, in addition to the above three colors, a light emitting element 120 including an EL layer 105 exhibiting a yellow (Y) or white (W) light emitting color may be provided.

Further, the openings provided in the insulating layer 165 and the insulating layer 167, and the first electrode layer 10
The insulating layer 115 is formed over the third layer. The structure of the insulating layer 115 can be the same as that of the first embodiment.

The insulating layer 165 functions as a flattening layer for suppressing the influence of the uneven shape by a transistor or the like provided at the lower portion. By providing the insulating layer 165, it is possible to suppress a short circuit of the light emitting element 120 and the like. The insulating layer 165 can be formed by using a photosensitive organic resin or the like.

Further, it is preferable that the insulating layer 168 and the insulating layer 169 in contact with the semiconductor layer of the transistor and the insulating layer 167 covering the transistor suppress the diffusion of impurities into the semiconductor constituting the transistor. For these insulating layers, for example, a semiconductor oxide or nitride such as silicon, or a metal oxide or nitride such as aluminum can be used. Further, such a laminated film of an inorganic insulating material or a laminated film of an inorganic insulating material and an organic insulating material may be used.

Here, an insulating material can be used for the adhesive layer 161. The adhesive layer 161 is
Similar to the flattening layer 113 exemplified in the first embodiment, it has a function of covering the uneven shape of the surface of the substrate 101. Further, if the configuration includes an organic resin in which particles made of a metal or alloy material are dispersed, heat generated from the light emitting element 120 can be efficiently conducted to the substrate 101, so that heat dissipation can be further improved.

The above is a description of the configuration example of the image display device 150.

[Example of manufacturing method]
Hereinafter, a method of manufacturing the image display device 150 will be described with reference to the drawings.

First, the release layer 173 and the insulating layer 163 are laminated and formed on the support substrate 171 (FIG. 5).
(A)). It is preferable to form the insulating layer 163 continuously after forming the peeling layer 173 without exposing it to the atmosphere, because it is possible to suppress the mixing of impurities.

As the support substrate 171, a substrate having a flat surface is used. For example, a substrate such as glass, quartz, sapphire, ceramic or metal can be used. Further, an organic resin substrate such as plastic may be used when it has heat resistance to the temperature required for the manufacturing process. Here, when a plastic substrate is used, the release layer 173 may not be necessary.

Further, in the present embodiment, the release layer 173 is formed in contact with the support substrate 171. However, when a glass substrate is used for the support substrate 171, a silicon oxide film and oxidation are formed between the support substrate 171 and the release layer 173. By forming an insulating layer such as a silicon nitride film, a silicon nitride film, or a silicon oxide film, contamination from the glass substrate can be prevented, which is more preferable.

The release layer 173 includes tungsten, molybdenum, titanium, tantalum, niobium, nickel, and the like.
An element selected from cobalt, zirconium, ruthenium, rhodium, palladium, osmium, iridium, and silicon, an alloy material containing the element, or a compound material containing the element, which is a single layer or a laminated layer. The crystal structure of the layer containing silicon may be amorphous, microcrystal, or polycrystal.

Further, the release layer 173 can be formed by a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. The coating method includes a spin coating method, a droplet ejection method, and a dispensing method.

When the release layer 173 has a single layer structure, it preferably forms a tungsten layer, a molybdenum layer, or a layer containing a mixture of tungsten and molybdenum. Alternatively, a layer containing an oxide or nitride of tungsten, a layer containing an oxide or nitride of molybdenum, or a layer containing an oxide or nitride of a mixture of tungsten and molybdenum is formed. The mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum.

Further, when forming a laminated structure of a layer containing tungsten and a layer containing an oxide of tungsten as the release layer 173, a layer containing tungsten is formed, and an insulating layer formed of an oxide is formed on the upper layer. Therefore, it may be utilized that a layer containing a tungsten oxide is formed at the interface between the tungsten layer and the insulating layer. Further, the surface of the layer containing tungsten may be subjected to thermal oxidation treatment, oxygen plasma treatment, treatment with a solution having strong oxidizing power such as ozone water, or the like to form a layer containing an oxide of tungsten. Further, the plasma treatment and the heat treatment may be performed in an atmosphere of oxygen, nitrogen, nitrous oxide alone, or a mixed gas atmosphere of the gas and another gas. By changing the surface state of the release layer 173 by the above plasma treatment or heat treatment,
It is possible to control the adhesion between the release layer 173 and the insulating layer 163 formed later.

Next, the insulating layer 163 is formed on the release layer 173. The insulating layer 163 is preferably formed of silicon nitride, silicon oxide, silicon nitride, or the like in a single layer or multiple layers.

The insulating layer 163 can be formed by a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. For example, the film formation temperature is 250 ° C. or higher by the plasma CVD method.
By forming the film at 00 ° C. or lower, a dense and extremely low water permeability film can be obtained. The thickness of the insulating layer 163 is 10 nm or more and 3000 nm or less, and further 200 nm or more and 15
It is preferably 00 nm or less.

Subsequently, on the insulating layer 163, the transistor 153 (not shown), the transistor 154,
The source wiring 151, the gate wiring 152 (not shown), and the like are formed. Here, a bottom gate type transistor is manufactured.

First, after forming a conductive film to be a gate electrode layer, an unnecessary portion of the conductive film is removed by using a known photolithography method to form a gate electrode layer. At the same time, wiring or the like formed of the same layer as the gate electrode layer is formed.

The material of the gate electrode layer shall be formed in a single layer or laminated using a metal material such as molybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper, neodymium, scandium or an alloy material containing these elements. Can be done.

Next, an insulating layer 169 to be a gate insulating layer is formed on the gate electrode layer. The insulating layer 169 can be formed by using a plasma CVD method, a sputtering method, or the like to form silicon oxide, silicon nitride, silicon oxide nitride, silicon nitride oxide, or aluminum oxide in a single layer or in a laminated manner. For example, plasma CVD using SiH ₄ , _N2O as the film forming gas.
A silicon oxynitride film may be formed by the method.

Next, a semiconductor film is formed, and an island-shaped semiconductor layer is formed using a photolithography method.

The material of the semiconductor film can be formed by using a silicon semiconductor or an oxide semiconductor. Examples of the silicon semiconductor include single crystal silicon, polycrystalline silicon, microcrystalline silicon, and the like, and as the oxide semiconductor, for example, an oxide semiconductor containing at least one of In, Ga, and Zn can be used. Typical examples include In—Ga—Zn—O-based metal oxides. However, by using an oxide semiconductor which is an In—Ga—Zn—O-based metal oxide as the semiconductor layer and forming a semiconductor layer having a low off current, the leakage current of the light emitting element formed later when the light emitting element is turned off. Can be suppressed, which is preferable.

Subsequently, after forming an insulating film covering the semiconductor layer, an insulating layer 168 having an opening for exposing a part of the semiconductor layer is formed by a photolithography method.

Then, after forming the conductive film, the source electrode and the drain electrode are formed by using a photolithography method. At the same time, wiring and the like formed in the same layer as the source electrode and the drain electrode are formed.

Examples of the conductive film used for the source electrode and the drain electrode include Al, Cr, Cu, and T.
A metal film containing an element selected from a, Ti, Mo, and W, a metal nitride film containing the above-mentioned elements (titanium nitride film, molybdenum nitride film, tungsten nitride film), and the like can be used. Further, a refractory metal film such as Ti, Mo, W or a metal nitride film thereof (titanium nitride film, molybdenum nitride film, tungsten nitride film) is formed on one or both of the lower side or the upper side of the metal film such as Al and Cu. May be a laminated configuration. Further, the conductive film used for the source electrode and the drain electrode layer may be formed of a conductive metal oxide. Conductive metal oxides include indium oxide (In _{2O 3} etc.), tin oxide (SnO ₂ etc.), zinc oxide (ZnO), etc.
Indium tin oxide (In ₂ O ₃ -SnO ₂ , etc.), indium zinc oxide (In ₂ )
O ₃ -ZnO, etc.), or those in which silicon oxide is contained in these metal oxide materials can be used.

The transistor 154 is formed by the above steps.

Next, the insulating layer 167 is formed on the semiconductor layer, the source electrode and the drain electrode. As the insulating layer 167, an inorganic insulating film such as a silicon oxide film, silicon oxide nitride, or an aluminum oxide film can be used.

Next, the insulating layer 165 is formed on the insulating layer 167 (see FIG. 5B).

As the insulating layer 165, it is preferable to select an insulating film having a flattening function in order to reduce surface irregularities caused by transistors. For example, organic materials such as polyimide, acrylic, and benzocyclobutene can be used. In addition to the above organic materials, low dielectric constant materials (l)
ow-k material) and the like can be used. The insulating layer 165 may be formed by laminating a plurality of insulating films formed of these materials.

Next, a photolithography method is used to form openings in the insulating layer 165 and the insulating layer 167 to reach the source electrode or the drain electrode. The opening method may be appropriately selected such as dry etching and wet etching. Alternatively, a photosensitive material is used as the insulating layer 165, and the insulating layer 165 is used.
After forming the insulating layer 165 having an opening by using a photolithography method, a part of the insulating layer 167 may be etched using this as a mask to form the opening. Alternatively, the insulating layer 1
After forming 67, an opening may be formed, and then an insulating layer 165 having the opening may be formed.

Next, a conductive film is formed on the insulating layer 165, and a first electrode layer 103 that is electrically connected to the source electrode or the drain electrode of the transistor 154 is formed by using a photolithography method.

Subsequently, the insulating layer 115 that covers the end portion of the first electrode layer 103 and the opening formed in the insulating layer 165 is formed (see FIG. 5C).

Subsequently, the EL layer 105 is formed on the first electrode layer 103. Here, a metal mask is used to selectively form an EL layer 105 exhibiting different emission colors on adjacent pixels by a thin-film deposition method.

It should be noted that an EL layer that emits white light in common as the EL layer 105 may be used, and a color filter that transmits different light may be provided above the light emitting element 120 of the adjacent pixel to display full color. .. In that case, the color filter is formed on the insulating layer 166 or is formed in advance on one surface of the protective layer 125. It is preferable to use a white light emitting EL layer in common because a metal mask for separately painting between pixels becomes unnecessary.

Subsequently, a second electrode layer 107 is formed on the EL layer 105.

In addition, either one of the first electrode layer 103 and the second electrode layer 107 is a light emitting element 1.
It functions as the anode of 20 and the other as the cathode of the light emitting device 120. The electrode functioning as an anode is preferably a substance having a large work function, and the electrode functioning as a cathode is preferably a substance having a small work function.

The light emitting element 120 is formed by the above steps.

Finally, an insulating layer 166 covering the second electrode layer 107 is formed (see FIG. 5D).

By the above steps, a transistor, wiring, and a light emitting element 120 can be formed on the support substrate 171.

Subsequently, peeling (separation) is performed between the insulating layer 163 and the peeling layer 173 (see FIG. 6A).
.. Various methods can be used as the peeling method.

For example, a metal oxide film is formed at the interface between the peeling layer 173 and the insulating layer 163 by heating the peeling layer 173 and the insulating layer 163 during the transistor forming process. A groove reaching the peeling layer 173 is formed (not shown), and the groove causes the metal oxide film to become fragile, and peeling occurs at the interface between the peeling layer 173 and the insulating layer 163.

As a peeling method, a mechanical force may be applied (a process of peeling with a human hand or a jig, a process of separating while rotating a roller, etc.). Further, a liquid is dropped into the groove, and the liquid is permeated into the interface between the peeling layer 173 and the insulating layer 163 to be permeated from the peeling layer 173 to the insulating layer 16.
3 may be peeled off. In addition, fluorogas such as NF ₃ , BrF ₃ , and ClF ₃ was introduced into the groove.
A method may be used in which the release layer 173 is removed by etching with a fluoride gas to remove the insulation layer 163 from the support substrate 171 having an insulating surface.

As another peeling method, when the peeling layer 173 is formed of tungsten, peeling can be performed while etching the peeling layer with a mixed solution of aqueous ammonia and hydrogen peroxide.

Further, as the release layer 173, a film containing nitrogen, oxygen, hydrogen, etc. (for example, an amorphous silicon film containing hydrogen, a hydrogen-containing alloy film, an oxygen-containing alloy film, etc.) is used, and the support substrate 171 has translucency. When a substrate is used, the release layer 173 is irradiated with laser light from the support substrate 171 to vaporize the nitrogen, oxygen and hydrogen contained in the release layer, and the support substrate 171 and the release layer 173 are vaporized.
A method of peeling between and can be used.

Next, the insulating layer 163 and the substrate 101 are bonded to each other using the adhesive layer 161 (see FIG. 6B). This process is also called transcription.

As the adhesive layer 161, various curable adhesives such as a photocurable adhesive such as an ultraviolet curable adhesive, a reaction curable adhesive, a thermosetting adhesive, or an anaerobic adhesive can be used. As the material of these adhesives, epoxy resin, acrylic resin, silicone resin, phenol resin and the like can be used.

By the above steps, the image display device 150 can be formed on the plastic substrate 101 (see FIG. 6C).

By applying the substrate 101 on which such an image display device 150 is formed to the method for manufacturing a light emitting device exemplified in the first embodiment, an image display device having a curved light emitting surface can be manufactured. In that case, the image display device 150 may be replaced with the light emitting device 110 exemplified in the first embodiment.

This embodiment can be carried out in combination with other embodiments and examples described in the present specification as appropriate.

(Embodiment 3)
In the present embodiment, an example of an electronic device or a lighting device to which the light emitting device of one aspect of the present invention is applied will be described with reference to the drawings.

Electronic devices to which a light emitting device having a curved light emitting surface is applied include, for example, a television device (also referred to as a television or a television receiver), a monitor for a computer, a digital camera, a digital video camera, a digital photo frame, and a mobile phone. Examples include telephones (also referred to as mobile phones and mobile phone devices), portable game machines, mobile information terminals, sound reproduction devices, and large game machines such as pachinko machines.

It is also possible to incorporate lighting and display devices along the curved surface of the interior or exterior of a house or building, or the interior or exterior of an automobile.

FIG. 7A shows an example of a mobile phone. The mobile phone 7400 has a housing 7401.
In addition to the display unit 7402 built into the unit, it is equipped with an operation button 7403, an external connection port 7404, a speaker 7405, a microphone 7406, and the like. The mobile phone 7400 is manufactured by using a light emitting device for the display unit 7402.

In the mobile phone 7400 shown in FIG. 7A, information can be input by touching the display unit 7402 with a finger or the like. In addition, all operations such as making a phone call or inputting characters can be performed by touching the display unit 7402 with a finger or the like.

Further, by operating the operation button 7403, the power can be turned on and off, and the type of the image displayed on the display unit 7402 can be switched. For example, you can switch from the mail composition screen to the main menu screen.

Here, the light emitting device of one aspect of the present invention is incorporated in the display unit 7402. Therefore, it is possible to obtain a highly reliable mobile phone having a curved display unit.

FIG. 7B shows an example of a wristband type display device. Portable display device 7100
Includes a housing 7101, a display unit 7102, an operation button 7103, and a transmission / reception device 7104.

The portable display device 7100 can receive a video signal by the transmission / reception device 7104, and can display the received video on the display unit 7102. It is also possible to transmit an audio signal to another receiving device.

In addition, the operation button 7103 can be used to turn the power on and off, switch the displayed image, adjust the audio volume, and the like.

Here, the display unit 7102 incorporates a light emitting device according to an aspect of the present invention. Therefore, it is possible to provide a highly reliable portable display device having a curved display unit.

7 (C) to 7 (E) show an example of a lighting device. Lighting equipment 7200, 7210,
Each of the 7220 has a base portion 7201 provided with an operation switch 7203 and a light emitting portion supported by the base portion 7201.

The lighting device 7200 shown in FIG. 7C includes a light emitting unit 7202 having a wavy light emitting surface. Therefore, it is a lighting device with high design.

The light emitting portion 7212 included in the lighting device 7210 shown in FIG. 7D has a configuration in which two light emitting portions curved in a convex shape are symmetrically arranged. Therefore, it is possible to illuminate in all directions centering on the lighting device 7210.

The lighting device 7220 shown in FIG. 7 (E) includes a light emitting unit 7222 curved in a concave shape. Therefore, since the light emitted from the light emitting unit 7222 is focused on the front surface of the lighting device 7220, it is suitable for illuminating a specific range brightly.

Here, the display unit 7102 incorporates a light emitting device according to an aspect of the present invention. Therefore, it is possible to provide a highly reliable lighting device having a curved display unit.

Needless to say, the light emitting device according to one aspect of the present invention is not particularly limited to the electronic devices and lighting devices shown above.

This embodiment can be carried out in combination with other embodiments and examples described in the present specification as appropriate.

In this embodiment, light emitting elements are manufactured on an insulating substrate and a conductive substrate, respectively, and the results of measuring the temperature characteristics when these light emitting elements are made to emit light will be described.

[Preparation of sample]
First, an aluminum substrate having a thickness of 0.2 mm and a glass substrate having a thickness of 0.7 mm were prepared.

Subsequently, an epoxy resin layer having a thickness of about 6 μm was formed as a flattening layer on each substrate by a spin coating method.

Subsequently, as the first electrode and wiring, a titanium film having a thickness of about 50 nm, an aluminum film having a thickness of about 200 nm, and a titanium film having a thickness of about 100 nm are laminated and formed by a sputtering method using a shielding mask. did.

Subsequently, as an insulating layer covering the end portion of the first electrode and the like, a thickness of about 20 is obtained by a screen printing method.
A layer of μm epoxy resin was formed.

Then, an EL layer exhibiting white light emission was formed at a position overlapping the first electrode by a vacuum vapor deposition method. Subsequently, an alloy film of silver and magnesium having a thickness of about 30 nm was formed on the EL layer as a second electrode by a vacuum vapor deposition method.

In this way, on the aluminum substrate and the glass substrate, the length is about 56 mm and the width is about 42 m.
A light emitting element having a light emitting region of m was formed. Here, the sample using an aluminum substrate is referred to as sample 1, and the sample using a glass substrate is referred to as sample 2. In this example, two samples 1 and two samples 2 were prepared.

[Temperature characterization]
Subsequently, the time dependence of the temperature on the light emitting surface when each sample was made to emit light was evaluated.

For evaluation, the sample was placed in contact with a stainless steel table, and the thickness was 0.
A 7 mm glass plate was placed in contact with each other, and a thermocouple was attached onto the glass plate to measure the temperature. The temperature was measured at two points, the central part of the light emitting surface and the region near the outer periphery.

8 (A) and 8 (B) are both measurement results of temperature fluctuations with respect to the time from the start of light emission at each measurement point of each sample. FIG. 8A shows the measurement results at the center of the light emitting surface, and FIG. 8A shows the measurement results.
(B) shows the measurement results in the region near the outer periphery of the light emitting surface. The measurement results will be described below.

First, in all the samples, the heat generation temperature tended to be higher in the central portion than in the region near the outer periphery of the light emitting surface.

In Sample 1 using an aluminum substrate, focusing on the central part, about 50 from the start of light emission.
Although the temperature rose sharply during the second, the temperature tended to rise slowly after that. The temperature near the light emitting surface 300 seconds after the start of light emission was about 37 ° C. in the central part and about 34 ° C. in the region near the outer periphery.

On the other hand, in the sample 2 using the glass substrate, the temperature rise from the start of light emission was steeper than that of the sample 1, and the rate of the temperature rise tended to be larger than that of the sample 1 even after that. The temperature near the light emitting surface 300 seconds after the start of light emission was about 42 ° C. in the central part and about 37 ° C. in the region near the outer periphery.

From the above results, it was confirmed that high heat dissipation can be realized by using a metal substrate as the substrate.

This example can be carried out in combination with other embodiments and examples described herein as appropriate.

In this embodiment, a light emitting device manufactured by the method exemplified in the first embodiment will be described.

First, in the same manner as in Sample 1 described in Example 1, a flattening layer, first, on an aluminum substrate.
The electrode layer, the insulating layer, the EL layer, and the second electrode layer are formed, and the length is about 56 mm and the width is about 42 mm.
A light emitting element having the light emitting region of the above was formed.

Subsequently, the aluminum substrate on which the light emitting element was formed was curved and fixed to a support having a convex surface having a radius of curvature of 45 mm using a weakly viscous adhesive.

Subsequently, a photocurable epoxy resin was dropped onto the aluminum substrate as a sealing material.

Subsequently, as a protective layer, a laminated body in which a glass layer having a thickness of about 50 μm, an adhesive layer having a thickness of about 20 μm, and a resin layer composed of PET (Polyethylene terephthalate) having a thickness of about 38 μm are laminated in order is used, and aluminum is used. In the region on the substrate where the light emitting element is not provided, the end portion of the protective layer was brought into close contact with the photocurable epoxy resin. Subsequently, ultraviolet rays having a wavelength of 365 nm were selectively irradiated from above the protective layer onto the close contact portion to cure the epoxy resin, and the protective layer and a part of the aluminum substrate were adhered to each other.

Subsequently, using a roller-shaped member, the protective layer is pressed against the upper surface of the protective layer and rolled while being pressed along the curved surface of the support starting from the contact point, and the protective layer and the photocurable resin are brought into close contact with each other. I let you.

Subsequently, the uncured region of the photocurable resin was cured by irradiating the uncured region of the photocurable resin from above the protective layer to completely bond the aluminum substrate and the protective layer.

In this way, a light emitting device having a curved light emitting portion on an aluminum substrate was manufactured.

FIG. 9 shows a photographic image when the produced light emitting device is made to emit light.

In addition, the light emitting device produced in this example has been confirmed to emit good light even when it exceeds 380 hours under normal temperature and humidity. For the sample that did not form the protective layer, poor light emission was observed at about 82 hours after preparation.

From the above results, it was confirmed that a light emitting device having a curved light emitting surface can be manufactured by the manufacturing method of one aspect of the present invention without causing defects such as cracks and cracks. Further, it was confirmed that the light emitting device produced in this way had no sealing defect and was a highly reliable light emitting device.

This example can be carried out in combination with other embodiments and examples described herein as appropriate.

100 Light emitting device 101 Substrate 103 First electrode layer 105 EL layer 107 Second electrode layer 110 Light emitting device 111 Wiring 113 Flattening layer 115 Insulation layer 120 Light emitting element 121 Support 122 Sealing material 123 Sealing layer 125 Protective layer 127 Optical 150 Image display device 151 Source wiring 152 Gate wiring 153 Transistor 154 Transistor 161 Adhesive layer 163 Insulation layer 165 Insulation layer 166 Insulation layer 167 Insulation layer 168 Insulation layer 169 Insulation layer 171 Support substrate 173 Peeling layer 7100 Portable display device 7101 Housing 7102 Display 7103 Operation button 7104 Transmission / reception device 7200 Lighting device 7201 Base 7202 Light emitting unit 7203 Operation switch 7210 Lighting device 7212 Light emitting unit 7220 Lighting device 7222 Light emitting unit 7400 Mobile phone 7401 Housing 7402 Display unit 7403 Operation button 7404 External connection port 7405 Speaker 7406 Mike

Claims (9)

A method for manufacturing a light emitting device having a curved light emitting surface.
A light emitting device is formed on a substrate having flexibility and a flat surface to be formed.
After the formation of the light emitting device, the substrate is placed on the curved surface of the support having the curved surface.
With the substrate placed on the support, a sealing material is provided on the light emitting device.
With the substrate placed on the support, a protective layer is attached onto the encapsulant.
A method for producing a light emitting device having a curved light emitting surface, which irradiates the sealing material with light through the protective layer in a state where the substrate is arranged on the support . A method for manufacturing a light emitting device having a curved light emitting surface.
A light emitting device is formed on a substrate having flexibility and a flat surface to be formed.
After the formation of the light emitting device, the substrate is placed on the curved surface of the support having the curved surface.
With the substrate placed on the support, a sealing material is provided on the light emitting device.
With the substrate placed on the support, a protective layer is attached onto the encapsulant.
With the substrate placed on the support, the sealing material is irradiated with light through the protective layer to form a sealing layer.
A method for producing a light emitting device having a curved light emitting surface in which the upper surface and the side surface of the light emitting device are covered with the sealing layer. A method for manufacturing a light emitting device having a curved light emitting surface.
A light emitting device is formed on a substrate having flexibility and a flat surface to be formed.
After the formation of the light emitting device, the substrate is placed on the curved surface of the support having the curved surface.
With the substrate placed on the support, a sealing material is provided on the light emitting device.
With the substrate placed on the support, a protective layer is provided in contact with a part of the sealing material.
The region where a part of the sealing material and a part of the protective layer are in contact with each other is irradiated with light to cure the part of the sealing material.
With the region where a part of the cured sealing layer and a part of the protective layer come into contact as a fulcrum, the protective layer is brought into close contact with the sealing material while bending the protective layer.
A method for producing a light emitting device having a curved light emitting surface, which irradiates the sealing material with light through the protective layer. A method for manufacturing a light emitting device having a curved light emitting surface.
A light emitting device is formed on a substrate having flexibility and a flat surface to be formed.
After the formation of the light emitting device, the substrate is placed on the curved surface of the support having the curved surface.
With the substrate placed on the support, a sealing material is provided on the light emitting device.
With the substrate placed on the support, a protective layer is provided in contact with a part of the sealing material.
The region where a part of the sealing material and a part of the protective layer are in contact with each other is irradiated with light to cure the part of the sealing material.
With the region where a part of the cured sealing layer and a part of the protective layer come into contact as a fulcrum, the protective layer is brought into close contact with the sealing material while bending the protective layer.
The sealing material is irradiated with light through the protective layer to form a sealing layer.
A method for producing a light emitting device having a curved light emitting surface in which the upper surface and the side surface of the light emitting device are covered with the sealing layer. In any one of claims 1 to 4,
A method for manufacturing a light emitting device, wherein the substrate has a metal material. In any one of claims 1 to 5,
A method for manufacturing a light emitting device, wherein the substrate has an alloy material. In claim 5 or 6,
A method for manufacturing a light emitting device, wherein the substrate has at least one selected from aluminum, copper, iron, nickel, titanium, and magnesium. In any one of claims 1 to 7,
A method for manufacturing a light emitting device, wherein the protective layer has a glass material. In any one of claims 1 to 7,
A method for manufacturing a light emitting device, wherein the protective layer has a glass layer and an organic resin layer.

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