JP2013175285A - Light-emitting device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting device which is flexible and highly reliable.SOLUTION: A light-emitting device manufacturing method comprises: forming a layer containing a luminescent organic compound and forming an upper electrode in a state where a flexible substrate is bonded to a support substrate via an adhesive layer; and subsequently peeling the flexible substrate on which a light-emitting element is formed from the support substrate. At this time, as a material used for the adhesive layer for bonding the flexible substrate and the support substrate, a material which is solid at an ambient temperature and which melts by application of heat can be used.

Description

  The present invention relates to a method for manufacturing a light-emitting device.

  Research and development of organic EL (ElectroLuminescence) elements have been actively conducted. The basic structure of an organic EL element (hereinafter also referred to as an EL element or a light-emitting element) is such that a layer containing a light-emitting organic compound is sandwiched between a pair of electrodes. Light emission can be obtained from the light-emitting organic compound by applying a voltage to this element.

  Examples of the light emitting device to which the organic EL element is applied include an illumination device and an image display device in which a thin film transistor is combined.

  Since the organic EL element can be formed into a film shape, a large-area element can be easily formed, and the utility value as a surface light source applicable to an illumination lamp is high. For example, Patent Document 1 discloses a lighting fixture using an organic EL element.

  In addition, since an image display device to which an organic EL element is applied does not require a backlight that is necessary for a liquid crystal display device or the like, a thin, lightweight, high-contrast display device with low power consumption can be realized.

  Examples of a method for forming a layer containing a light-emitting organic compound on a lower electrode formed on a substrate having an insulating surface when forming an organic EL element include a vacuum evaporation method and a coating method. As a method for forming the lower electrode and the upper electrode, there are a coating method, a printing method, and the like, in addition to a vacuum deposition method and a sputtering method.

  In recent years, diversification of the shape of the light emitting device has been demanded. One of them is a flexible light-emitting device that can reproduce a curved surface. By using a flexible substrate as a substrate on which the organic EL element is formed, a flexible light-emitting device can be realized. Such a flexible light-emitting device can be made very light compared to the case where a glass substrate or the like is used as a support substrate.

  In addition, by making the light emitting device flexible, designability and versatility are improved, and the degree of freedom of the shape of a place to install and a member to be incorporated is increased. For example, a lighting device or a display device can be incorporated along a curved surface of an interior or exterior of a building or an automobile. Further, it can be used for various applications such as a wearable lighting device such as a wristband, a display device, a mobile phone or a tablet terminal provided with a display portion having a curved surface.

JP 2009-130132 A

  Here, when a layer containing a light-emitting organic compound is formed on a substrate provided with a lower electrode by a vacuum vapor deposition method, the formation surface is held so that the surface to be formed faces downward (face-down method) Is also used in many cases. By holding the formation surface downward, dust can be prevented from adhering to the formation surface, so that a highly reliable light-emitting element can be formed. Similarly, even when the upper electrode is formed, the face-down method is often used.

  However, in the case of using a flexible substrate, a problem may occur due to the substrate being bent when the face-down method is used when forming a layer containing a light-emitting organic compound or an upper electrode. is there. For example, in the vacuum evaporation method or sputtering method, the distance between the film formation source and the surface to be formed changes, so that a film cannot be formed with a uniform thickness, or the device member and the surface to be formed contact when the substrate is transported. Inconvenience occurs.

  In order to solve such a problem, for example, a layer containing a light-emitting organic compound or an upper part in a state where a flexible substrate is attached to a support substrate through an adhesive layer made of a curable resin. After the electrode is formed, the flexible substrate on which the light-emitting element is formed is peeled from the supporting substrate.

  However, in this method, when the flexible substrate is physically peeled from the support substrate, physical stress is applied to the light emitting element, which may cause cracks in the electrodes and the like constituting the light emitting element. In addition, the method of peeling by dissolving the adhesive layer with a solvent or an acid can reduce the magnitude of the stress, but the material constituting the light-emitting element or part of the flexible substrate is dissolved by the solvent or acid used. The reliability of the light-emitting element may be impaired due to the impurities being mixed into the light-emitting element.

  The present invention has been made under such a technical background. Therefore, an object of one embodiment of the present invention is to provide a light-emitting device that is flexible and highly reliable.

  In order to solve the above-described problems, the present invention has focused on a material for an adhesive layer that bonds a flexible substrate and a support substrate. As a material used for the adhesive layer, a material that is solid at room temperature and melts by heating may be used.

  That is, in a method for manufacturing a light-emitting device of one embodiment of the present invention, a step of forming a first electrode over one surface of a flexible first substrate and an organic material layer over one surface of a supporting substrate are provided. After the step and the organic material layer are heated and melted, the back surface of the first substrate facing the one surface and the organic material layer are brought into close contact with each other, and then the organic material layer is cooled and solidified to support the first substrate. The substrate is bonded via an organic material layer, a layer containing a light-emitting organic compound is formed on the first electrode, and a second electrode is formed on the layer containing the light-emitting organic compound. And a step of peeling the first substrate from the supporting substrate in a state where the substrate is melted by heating, and using a material containing an organic compound having a melting point of 30 ° C. or higher and 150 ° C. or lower for the organic layer. And

  According to such a method, when forming a layer containing a light-emitting organic compound or an upper electrode (second electrode), the first substrate and the support substrate having flexibility are formed by the organic material layer used as the adhesive layer. Are securely bonded to each other, so that it is possible to eliminate a problem caused by the bending of the first substrate.

  Furthermore, when the first substrate on which the light-emitting element is formed is peeled from the support substrate, the organic layer used as the adhesive layer is peeled in a molten state, so the adhesiveness of the organic layer is lost and the first substrate is removed. There is no physical stress on the light emitting element provided. As a result, damage such as generation of cracks in the layers constituting the light emitting element can be extremely reduced. Furthermore, since the organic layer is liquefied when peeling, generation of ESD (Electro Static Discharge) in the peeling step is suppressed, and a highly reliable light-emitting device can be manufactured.

  As a material that can be used for the organic layer used as the adhesive layer, a material that is solid at room temperature and melts when heated can be used.

  Here, the higher the melting point of the material used for the organic material layer, the higher the temperature of the first substrate that is attached to the supporting substrate, the higher the processing temperature, but the processing temperature in consideration of thermal damage to the light emitting element. Need to be set.

  For example, when the treatment temperature is 150 ° C. or lower, the influence on characteristics due to thermal damage to the light emitting element can be suppressed. If a material having a processing temperature of 100 ° C. or lower is used, the thermal influence on the light emitting element can be almost ignored.

  On the other hand, when the melting point is lower than 30 ° C., a part of the organic layer is melted when the layer containing the light-emitting organic compound or the second electrode is formed, and the first substrate is displaced from the supporting substrate and slides down. There is a risk that.

  Therefore, the melting point of the material used for the organic layer is 30 ° C. or higher and 150 ° C. or lower, preferably 30 ° C. or higher and 100 ° C. or lower.

  As a material used for the organic layer, for example, a wax having the above properties can be used. In the present specification, wax includes an oily substance (wax ester) which is an ester of a higher fatty acid and a monohydric or dihydric higher alcohol, a neutral fat, a higher fatty acid, a hydrocarbon and the like. The wax may be derived from animals or plants, or may be derived from minerals, petroleum or the like. Specifically, for example, paraffin, paraffin wax (solid paraffin), synthetic wax, or a known hot-melt adhesive having a melting point equal to or lower than the above-described temperature can be used. Paraffin wax mainly composed of paraffin is preferable because it is chemically stable.

  According to another embodiment of the present invention, a method for manufacturing a light-emitting device includes a step of forming a first electrode over one surface of a flexible first substrate, and an organic material layer over one surface of a supporting substrate. And a step of bringing the organic material layer into close contact with the back surface of the first substrate facing the one surface in a state where the organic material layer is heated and melted, and then cooling and solidifying the organic material layer. And a support substrate are bonded through an organic material layer, a layer containing a light-emitting organic compound is formed on the first electrode, and a second electrode is formed on the layer containing the light-emitting organic compound, A state in which the second substrate having a flexibility facing one surface of the first substrate and the first substrate are bonded via a sealing layer, and the organic layer is heated and melted. And a step of peeling the first substrate from the support substrate, and the organic layer has an organic layer having a melting point of 30 ° C. or higher and 150 ° C. or lower. Which comprises using a material containing an object.

  Here, in the case where the conventional adhesive layer is used, the first substrate on which the light-emitting element is formed and the second substrate facing the first substrate are bonded to each other by the sealing layer, and then the first substrate is bonded. When the substrate and the supporting substrate are separated, the physical stress at the time of separation peels off at the interface between the sealing layer and the first substrate, or the interface between the sealing layer and the second substrate, resulting in poor sealing. There was a risk of it occurring.

  However, according to the method of one embodiment of the present invention, physical stress does not occur at the time of peeling, so that the first substrate and the supporting substrate can be peeled after the sealing step is finished. . Therefore, it becomes possible to perform sealing in a state of high cleanliness immediately after forming the second electrode layer, and dust and the like are prevented from being mixed between the first substrate and the second substrate. Therefore, a highly reliable light-emitting device can be manufactured.

  In addition, a method for manufacturing a light-emitting device according to another embodiment of the present invention is any of the above-described methods for manufacturing a light-emitting device, in which the first substrate and the second substrate are each made of a metal material or an alloy material. In addition, a material that transmits light emitted from a light-emitting organic compound is used for the other.

  As described above, it is preferable to use a substrate containing a metal material or an alloy material for either the first substrate or the second substrate because heat dissipation of the light-emitting device itself is increased. Further, by using such a conductive material, the influence of ESD during the manufacturing process or use of the light-emitting device can be suppressed; thus, a highly reliable light-emitting device can be manufactured. Further, when the first substrate is peeled from the support substrate, the thermal conductivity of the light emitting device itself is improved, so that the organic material layer can be heated uniformly, and peeling is facilitated.

  In addition, a method for manufacturing a light-emitting device according to another embodiment of the present invention is any of the above-described methods for manufacturing a light-emitting device, in which the first substrate and the second substrate are each made of a metal material or an alloy material. And a laminated body in which a glass layer and an organic resin layer are sequentially laminated from the side close to the first electrode and transmits light emitted from a light-emitting organic compound.

  In addition, by using a material including a glass layer as a substrate from which light emission is extracted, diffusion of impurities such as moisture and oxygen from the outside is suppressed, so that a highly reliable light-emitting device can be realized. In addition, by providing the organic resin layer outside the glass layer, the glass layer can be prevented from cracking and cracking, and the strength of the substrate can be increased.

  Here, in the method for manufacturing a light-emitting device of one embodiment of the present invention described above, when the first substrate and the supporting substrate are peeled, a part of the molten organic material layer is attached to the back surface side of the first substrate. Can do. In this manner, a light-emitting device having a characteristic effect that is not found in a conventional light-emitting device can be realized by providing a light-emitting device in which an organic layer is provided on the back surface of a first substrate on which a light-emitting element is formed.

  That is, the light-emitting device of one embodiment of the present invention includes a flexible first substrate, a first electrode provided over one surface of the first substrate, and a light-emitting provided over the first electrode. A layer containing a luminescent organic compound, a second electrode provided on the layer containing a luminescent organic compound, and a second substrate facing the one surface of the first substrate and having flexibility And a sealing layer for bonding the first substrate and the second substrate, and an organic layer provided on the back surface of the first substrate facing the one surface. Further, the first substrate is made of a metal material or an alloy material, the second substrate is made of a material that transmits light emitted from the light-emitting organic compound, and the organic material layer has a melting point of 30 ° C. or higher and 150 ° C. or lower. It is characterized by containing wax.

  In this manner, heat dissipation can be improved by using a substrate containing a metal material or an alloy material for the first substrate over which the light-emitting element is provided. Furthermore, by providing an organic layer on the back side of the first substrate, the exposed surface of the first substrate can be made insulative and easy to handle. Furthermore, by using a material containing a chemically stable wax as the organic layer, the organic layer acts as a protective film on the surface of the first substrate. In addition, since the organic layer can be provided with water repellency by using a material including wax in the organic layer, the first substrate itself including the metal material or the alloy material even in a high humidity environment. Corrosion can be suppressed.

  In the light-emitting device of another embodiment of the present invention, in the light-emitting device, the second substrate includes a glass layer and an organic resin layer that are sequentially stacked from the side close to the first electrode, and a light-emitting organic material. It is a laminate that transmits light emitted from a compound.

  In addition, when a substrate containing a metal material or an alloy material is used as the first substrate in this way, a substrate in which a glass layer and an organic resin layer are stacked is used as the second substrate from which light emission is extracted. Thus, a highly reliable light-emitting device can be obtained.

  A light-emitting device of another embodiment of the present invention is provided on a first substrate having flexibility, a first electrode provided on one surface of the first substrate, and the first electrode. A layer containing a light-emitting organic compound, a second electrode provided on the layer containing a light-emitting organic compound, a second electrode facing the one surface of the first substrate and having flexibility A substrate, a sealing layer for bonding the first substrate and the second substrate, and an organic layer provided on the back surface of the first substrate facing the one surface, wherein the first substrate emits light The second substrate is made of a metal material or an alloy material, and the organic layer includes a wax having a melting point of 30 ° C. or higher and 150 ° C. or lower.

  Thus, the organic substance layer containing wax is provided on the surface of the first substrate from which light emission is extracted. Wax has a higher refractive index than air (for example, paraffin has a refractive index of about 1.45) and has light scattering properties. Therefore, the total reflection of light emitted from the translucent first substrate side is suppressed as compared with the case where the organic material layer is not provided. Furthermore, since the light incident on the organic material layer is scattered within the organic material layer and emitted to the outside (air), total reflection at the interface between the organic material layer and air is also suppressed. As a result, a light emitting device with improved light extraction efficiency can be realized.

  In order to improve the light scattering property, particles that scatter light may be dispersed in the organic material layer. For example, particles of a material having a refractive index different from that of the material used for the organic layer or particles that reflect light can be used. For example, glass or metal particles may be used, or bubbles may be mixed.

  The organic layer also functions as a water-repellent protective film for protecting the surface of the first substrate from which light emission is extracted. In particular, when a substrate having a glass layer is used as the first substrate, the mechanical strength can be improved by providing the organic material layer, and the occurrence of cracks and cracks can be suppressed.

  Note that in this specification, an EL layer refers to a layer including at least a light-emitting organic compound (also referred to as a light-emitting layer) or a stacked body including a light-emitting layer provided between a pair of electrodes of a light-emitting element. .

  Note that in this specification, a light-emitting device refers to an image display device, a light-emitting device, or a light source (including a lighting device). In addition, a module in which a connector such as an FPC (Flexible Printed Circuit) or TAB (Tape Automated Bonding) tape or TCP (Tape Carrier Package) is attached to the light emitting device, or a printed wiring board at the end of the TAB tape or TCP is provided. In addition, a module in which an IC (integrated circuit) is directly mounted on a substrate on which a light emitting element is formed by a COG (Chip On Glass) method is included in the light emitting device.

  According to the present invention, a light emitting device that is flexible and highly reliable can be provided.

6A and 6B illustrate a method for manufacturing a light-emitting device of one embodiment of the present invention. 6A and 6B illustrate a method for manufacturing a light-emitting device of one embodiment of the present invention. 6A and 6B illustrate a light-emitting device of one embodiment of the present invention. 6A and 6B illustrate a light-emitting device of one embodiment of the present invention. 6A and 6B illustrate a method for manufacturing a light-emitting device of one embodiment of the present invention. 6A and 6B illustrate a method for manufacturing a light-emitting device of one embodiment of the present invention. 4A and 4B each illustrate an electronic device to which a light-emitting device of one embodiment of the present invention is applied. 4A and 4B each illustrate an electronic device to which a light-emitting device of one embodiment of the present invention is applied.

  Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in structures of the invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated.

  Note that in each drawing described in this specification, the size, the layer thickness, or the region of each component is exaggerated for simplicity in some cases. Therefore, it is not necessarily limited to the scale.

(Embodiment 1)
In this embodiment, a structural example of a light-emitting device of one embodiment of the present invention and an example of a method for manufacturing the light-emitting device will be described with reference to drawings.

<Example of production method>
Hereinafter, an example of a method for manufacturing the light-emitting device described in this embodiment will be described with reference to drawings. In this manufacturing method example, a manufacturing method of a top-emission light-emitting device in which light emission is extracted to the substrate surface side where the light-emitting element is formed will be described.

  1A to 1E are a schematic top view and a schematic cross-sectional view cut along a cutting line AB shown in each schematic step in the manufacturing process of the light-emitting device.

  First, the first substrate 101 is prepared. As the first substrate 101, a flexible material is used, and a substrate having at least a flat surface to be formed is used.

  As the first substrate 101, an organic resin, a glass material having a thickness enough to have flexibility, or the like can be used.

  In particular, in the case of a top-emission light-emitting device, a conductive substrate containing a metal or an alloy material is preferably used as the first substrate 101 because heat dissipation from heat generated from a light-emitting element formed later is increased.

  In addition, it is preferable to use a substrate that has been subjected to an insulating treatment by oxidizing the surface of the conductive substrate or forming an insulating film on the surface. For example, an insulating film is formed on the surface of a conductive substrate by using an electrodeposition method, a coating method such as a spin coating method or a dipping method, a printing method such as a screen printing method, or a deposition method such as a vapor deposition method or a sputtering method. Alternatively, the surface of the first substrate 101 may be oxidized by a known method such as a method of leaving or heating in an oxygen atmosphere or an anodic oxidation method.

  In this embodiment mode, for example, a stainless substrate having a thickness of about 200 μm may be used as the first substrate 101.

  Subsequently, a planarization layer 113 is formed on the formation surface of the first substrate 101.

  The planarization layer 113 is formed for the purpose of forming an insulating surface planarized by covering the uneven shape of the first substrate 101. The planarizing layer 113 can be formed using an insulating material and can be formed using an organic material or an inorganic material.

  The planarization layer 113 can be formed using a deposition method such as a sputtering method, a coating method such as a spin coating method or a dip method, a discharge method such as an ink jet method or a dispensing method, a printing method such as a screen printing method, or the like. .

  Alternatively, an organic resin in which particles made of a metal or an alloy material are dispersed can be used for the planarization layer 113. By using the planarization layer 113 in which a conductive material is dispersed in this manner, heat generated from a light-emitting element to be formed later can be efficiently conducted to the first substrate 101, so that heat dissipation is further improved. be able to. In order to improve flatness and insulation, an organic resin may be further laminated on the organic resin in which conductive particles are dispersed.

  Note that in the case where the formation surface of the first substrate 101 is an insulating surface and the planarity thereof is sufficiently high, the planarization layer 113 is not necessarily provided.

  Subsequently, the first electrode layer 103 and the wiring 111 are formed over the planarization layer 113.

  The first electrode layer 103 and the wiring 111 may be made of the same material or different materials. In addition, at least in a region where the light-emitting element over the first electrode layer 103 is formed, a material having reflectivity with respect to light emission from the EL layer 105 to be formed later is used. Alternatively, a material having high light reflectivity may be stacked in a region where the light-emitting element is formed over the first electrode layer 103.

  The first electrode layer 103 and the wiring 111 can be formed by a deposition method such as a sputtering method or an evaporation method, a printing method such as a screen printing method, a discharge method such as an inkjet method or a dispensing method, a plating method, or the like. In particular, the first electrode layer 103 and the wiring 111 are preferably formed at the same time using a screen printing method.

  Subsequently, an insulating layer 115 that covers the first electrode layer 103 and the end portion of the wiring 111 and includes an opening that exposes part of the first electrode layer 103 and the wiring 111 is formed.

  The insulating layer 115 has a curved surface having a radius of curvature (0.2 μm to 3 μm) at the upper end or the lower end of the insulating layer 115 in order to improve the coverage of the second electrode layer 107 to be formed later. Preferably.

  The insulating layer 115 can be formed by a deposition method such as a sputtering method, a discharge method such as an inkjet method or a dispensing method, a printing method such as a screen printing method, a photolithography method, or the like.

  A schematic top view and a schematic cross-sectional view at this stage correspond to FIG.

  Subsequently, the first substrate 101 is attached to the support substrate 121 on which the organic material layer 123 is formed in advance.

  The support substrate 121 is made of a material having a flat support surface and higher rigidity than the first substrate 101. The support substrate 121 is bent at least in a later step when the EL layer 105 or the second electrode layer 107 is formed using the face-down method with the first substrate 101 bonded. A substrate having such a rigidity that the formation surface of one substrate 101 does not come into contact with a part of the deposition apparatus is used.

  As the support substrate 121, a glass substrate, a ceramic substrate, a semiconductor substrate, a plastic substrate, a metal substrate, or the like can be used. In order to increase the rigidity of the support substrate 121, the thickness may be increased. However, if the thickness is increased, the weight of the support substrate 121 may increase, and the amount of deflection may increase. In that case, the physical characteristics (density, Young's modulus, thermal expansion coefficient, etc.) of the material itself used for the support substrate 121, the area of the support substrate 121, and the apparatus of the film formation apparatus for forming the EL layer 105 and the second electrode layer 107 The thickness may be adjusted in consideration of the configuration (position and area of the member supporting the support).

  In addition, the surface (back surface) opposite to the surface to be bonded of the support substrate 121 may have a shape different from the flat surface, and the deflection of the support substrate 121 may be adjusted. For example, the amount of deflection can be adjusted by forming the shape such that the thickness increases from the end of the support substrate 121 toward the center. For example, the rigidity of the support substrate 121 may be increased by providing a slit-like or lattice-like groove on the back surface of the support substrate 121. In addition, for example, a thin film made of a different material with low stretchability, a ribbon-like sheet, or a member such as a wire may be provided on the flat back surface of the support substrate 121 in a slit shape or a lattice shape.

  Further, a fixing tool such as a rail for fixing to the film forming apparatus may be provided on the back surface of the support substrate 121. By adopting a structure in which the support substrate 121 can be fixed to the film forming apparatus with such a fixture, the deflection of the support substrate 121 can be reduced even if the thickness of the support substrate 121 is thin and the rigidity is insufficient. Therefore, the support substrate 121 can be reduced in weight and easy to handle.

  In this embodiment, a glass substrate having a thickness of 0.7 mm is used as the support substrate 121.

  The organic layer 123 provided on the surface to be bonded of the support substrate 121 functions as an adhesive layer that bonds the support substrate 121 and the first substrate 101. Here, as the organic layer 123, a material that is solid at room temperature and melts when heated is used.

  As a material used for the organic layer 123, for example, a wax having the above properties can be used. In the present specification, wax includes an oily substance (wax ester) which is an ester of a higher fatty acid and a monohydric or dihydric higher alcohol, a neutral fat, a higher fatty acid, a hydrocarbon and the like. The wax may be derived from animals or plants, or may be derived from minerals, petroleum or the like. Specifically, for example, paraffin, paraffin wax (solid paraffin), synthetic wax, or a known hot-melt adhesive having a melting point at a temperature shown below can be used. Paraffin wax mainly composed of paraffin is preferable because it is chemically stable.

  As a method for providing the organic material layer 123 on the support substrate 121, for example, a solid material made of a material constituting the organic material layer 123 is disposed on the adherend surface of the support substrate 121, and the solid material is heated so as to have a melting point or higher. And a method of forming the organic material layer 123 in close contact with the adherend surface of the support substrate 121 is used. Since the solid material melts and spreads on the adherend surface of the support substrate 121, the solid material may have any shape, such as a block shape or a sheet shape. It is preferable to use a sheet-like solid material because the solid material melts in a short time and spreads uniformly on the surface on which the support substrate 121 is formed.

  Other methods for providing the organic layer 123 on the support substrate 121 include a method using a coating apparatus such as a slit coater, curtain coater, gravure coater, roll coater, spin coater, a discharge method such as a dispense method or an ink jet method, a screen, etc. A printing method such as a printing method can be used. In any method, in order to enable the solid material to be the organic material layer 123 to be formed on the support substrate 121 in a state of being heated and liquefied, a structure including a heating mechanism may be employed.

  In a state where the organic material layer 123 formed on the support substrate 121 in this way is heated to a melting point or higher and melted, the first substrate 101 is opposite to the formation surface of the organic material layer 123 and the first substrate 101. It arrange | positions so that the surface (back surface) of a side may contact | connect (refer FIG.1 (B)).

  As a method of heating the organic layer 123, there is a method of directly heating the organic layer 123 or indirectly heating the organic layer 123 by heating the support substrate 121 with the heating means 125.

  In the case of directly heating the organic layer 123, it is preferable to heat the organic layer 123 by irradiating light. In that case, a lamp such as a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressure sodium lamp, or a high pressure mercury lamp can be used as the light source.

  When the support substrate 121 is heated, a method of heating by irradiating light as described above or a method of heating by contacting a heating element can be used. In addition, it is preferable to heat from the back surface of the support substrate 121 when heating.

  In particular, it is preferable to use a hot plate as the heating means and arrange and heat the back surface of the support substrate 121 and the hot plate in contact with each other. Since the entire support substrate 121 can be heated uniformly by using a hot plate, the molten state of the organic layer 123 can be made uniform.

  In this manner, after the first substrate 101 is disposed in contact with the molten organic material layer 123, the organic material layer 123 is cooled and solidified, and the support substrate 121 and the first substrate 101 are bonded by the organic material layer 123. To do.

  For example, when a hot plate is used, the organic layer 123 can be uniformly solidified in a short time by providing the hot plate with a cooling mechanism.

  Here, the higher the melting point of the material used for the organic material layer 123, the higher the temperature of the first substrate 101 attached to the supporting substrate 121, the higher the temperature, but in consideration of thermal damage to the light-emitting element. Must be set.

  For example, when the treatment temperature is 150 ° C. or lower, the influence on characteristics due to thermal damage to the light emitting element can be suppressed. If a material having a processing temperature of 100 ° C. or lower is used, the thermal influence on the light emitting element can be almost ignored.

  On the other hand, when the melting point is lower than 30 ° C., part of the organic layer is melted when the layer containing the light-emitting organic compound or the second electrode is formed, and the first substrate is displaced from the supporting substrate or slips down. There is a risk of doing.

  Therefore, the melting point of the material used for the organic layer is preferably 30 ° C. or higher and 150 ° C. or lower, and preferably 30 ° C. or higher and 100 ° C. or lower.

  Subsequently, the EL layer 105 is formed over the first electrode layer 103 by using a face-down film formation method. The EL layer 105 is formed by a vacuum evaporation method. By using a vacuum evaporation method, even when a large substrate is used as the first substrate 101, a uniform thickness can be obtained.

  The EL layer 105 may include at least a layer containing a light-emitting organic compound (also referred to as a light-emitting layer), and may be a single layer or a plurality of layers. As an example of a configuration composed of a plurality of layers, a configuration in which a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer are stacked from the anode side can be given as an example. Note that these layers other than the light-emitting layer are not necessarily provided in the EL layer 105. Further, these layers can be provided in an overlapping manner. Specifically, a plurality of light emitting layers may be provided to overlap with the EL layer 105, or a hole injection layer may be provided to overlap with the electron injection layer. In addition to the charge generation layer, other configurations such as an electronic relay layer can be added as appropriate as an intermediate layer. For example, it is good also as a structure which laminates | stacks the light emitting layer which exhibits a different luminescent color. For example, white light emission can be obtained by laminating two or more light emitting layers having a complementary color relationship.

  Subsequently, the second electrode layer 107 is formed over the EL layer 105 and the exposed region of the wiring 111 using a face-down film formation apparatus. The second electrode layer 107 is preferably formed continuously after the EL layer 105 is formed without being exposed to the air.

  The second electrode layer 107 is formed using a conductive material that transmits light emitted from the EL layer 105. For example, as the material used for the second electrode layer 107, a light-transmitting conductive metal oxide can be used. In the case of using a metal, it may be formed thin enough to show translucency.

  The second electrode layer 107 is formed by an evaporation method or a sputtering method. Note that in the case where a light-transmitting metal oxide thin film is used as the second electrode layer 107, the light-transmitting property can be improved by forming the conductive metal oxide in an atmosphere containing argon and oxygen. Can do.

  In the case where a conductive metal oxide is formed over the EL layer 105, a first conductive metal oxide film formed in an atmosphere containing argon with reduced oxygen concentration and an atmosphere containing argon and oxygen are used. A stacked film of the formed second conductive metal oxide films is preferable because damage to the EL layer 105 due to oxygen can be reduced. In particular, it is preferable that the purity of the argon gas used when forming the first conductive metal oxide film is high. For example, an argon gas having a dew point of −70 ° C. or lower, preferably −100 ° C. or lower is used. Is preferred.

  As described above, even when the face-down method is applied by forming the EL layer 105 and the second electrode layer 107 in a state where the first substrate 101 is bonded to the support substrate 121 with the organic material layer 123. Since defects due to the deflection of the first substrate 101 are suppressed, adhesion of dust and the like to the formation surface and generation of scratches by touching the film formation apparatus are suppressed, and a highly reliable light-emitting element is formed. can do.

  Through the above steps, the light-emitting element 120 in which the first electrode layer 103, the EL layer 105, and the second electrode layer 107 are stacked is formed. A schematic top view and a schematic cross-sectional view at this stage correspond to FIG. Note that since the organic layer 123 in FIG. 1C is in a solidified state, the hatching is different from that of the organic layer 123 in a molten state illustrated in FIG.

  Here, a protective film may be formed over the second electrode layer 107. By forming the protective film, diffusion of impurities such as water and oxygen into the light-emitting element 120 is suppressed, so that a more reliable light-emitting device can be obtained. As the protective film, a material having a light-transmitting property and a barrier property against water and oxygen is used. For example, a semiconductor such as silicon or an oxide or nitride of metal such as aluminum may be used.

  Subsequently, the first substrate 101 and the second substrate 102 are attached to each other using the sealing layer 119 (see FIG. 1D).

  As a material used for the sealing layer 119, a photocurable organic resin, a two-component mixed curable resin, a thermosetting organic resin, or the like can be used. Note that when a thermosetting organic resin is used as the material, if the organic material layer 123 is melted by heat for curing the sealing layer 119, the first substrate 101 is prevented from slipping and sliding. It is preferable to heat the substrate 121 while holding it horizontally. In addition, when a thermosetting organic resin whose curing temperature is lower than the melting point of the organic layer 123 is used, it is preferable that such consideration is not necessary. For the sealing layer 119, a material having a light-transmitting property with respect to at least light emitted from the light-emitting element 120 in the cured state is used. The material used for the sealing layer 119 is preferably a material that does not transmit water or oxygen as much as possible. In addition, it is preferable to use a material containing a desiccant as the material used for the sealing layer 119.

  The second substrate 102 is formed using a material that transmits at least light emitted from the light-emitting element 120 and a material that has flexibility. For example, an organic resin or a flexible glass material can be used.

  In particular, the second substrate 102 is preferably a stacked body in which a glass layer and an organic resin layer are sequentially stacked from the side close to the first electrode layer 103. By using a material including a glass layer, diffusion of impurities such as moisture and oxygen from the outside is suppressed, so that a highly reliable light-emitting device can be realized. In addition, by providing the organic resin layer outside the glass layer, it is possible to suppress the generation of cracks and cracks in the glass layer and increase the mechanical strength of the substrate.

  For example, it is preferable to use a sheet in which a glass layer, an adhesive layer, and an organic resin layer are stacked from the side close to the first electrode layer 103. The thickness of the glass layer is 20 μm or more and 200 μm or less, preferably 25 μm or more and 100 μm or less. The glass layer having such a thickness can simultaneously realize a high barrier property against water and oxygen and flexibility. The thickness of the organic resin layer is 10 μm to 200 μm, preferably 20 μm to 50 μm.

  In the bonding, a sealing material to be the sealing layer 119 is applied to the surface of the first substrate 101 or the second substrate 102, and then the first substrate 101 and the second substrate 102 apply the sealing material. It arrange | positions so that it may closely_contact | adhere through, and can harden | cure a sealing material after that and can perform by forming the sealing layer 119.

  The bonding process is preferably performed in an environment where oxygen and moisture are reduced as much as possible. In particular, when bonding is performed in a reduced-pressure atmosphere, bubbles containing oxygen and moisture contained in the sealing material can be degassed, so that impurities in the sealing layer 119 after curing are reduced and reliable. A highly light-emitting device can be manufactured.

  A schematic top view and a schematic cross-sectional view at this stage correspond to FIG.

  Subsequently, the first substrate 101 is peeled from the support substrate 121 in a state where the organic layer 123 is heated and melted (see FIG. 1E).

  As a method for heating the organic layer 123, the above-described method can be used. In particular, it is preferable to use a hot plate as the heating means 125.

  The separation of the first substrate 101 from the support substrate 121 may be performed by applying mechanical force (such as a process of peeling with a human hand or a jig or a process of separating while rotating a roller). .

  At this time, since the organic material layer 123 is peeled in a molten state, the adhesiveness of the organic material layer 123 is lost, and the first substrate 101 and the light emitting element 120 provided on the first substrate 101 are physically attached. It can be easily peeled off without applying stress. As a result, damage to the light-emitting element 120, such as cracks in the layers (the first electrode layer 103, the second electrode layer 107, or the EL layer 105) included in the light-emitting element 120, or peeling between the layers. Can be greatly reduced. Furthermore, since the organic layer 123 is liquefied when peeling, ESD generation in the peeling step is suppressed, and a highly reliable light-emitting device can be manufactured.

  In addition, since the support substrate 121 and the first substrate 101 are peeled in a state where the organic material layer 123 is melted, physical stress applied to the light-emitting device at the time of peeling is extremely reduced, so that the first substrate Even in a state where the second substrate 102 is bonded to the substrate 101, sealing failure does not occur due to peeling at the interface between the sealing layer 119 and the first substrate or the second substrate at the time of peeling. The first substrate 101 and the support substrate 121 can be peeled off satisfactorily.

  In this manner, since sealing can be performed with a high cleanliness immediately after the second electrode layer 107 is formed, dust or the like is mixed between the first substrate and the second substrate. Thus, a highly reliable light-emitting device can be manufactured. Note that the first substrate 101 may be peeled from the supporting substrate 121 immediately after the second electrode layer 107 is formed, and then the above-described bonding process may be performed.

  Through the above steps, the light-emitting device 100 in which the light-emitting element 120 is formed over the first substrate 101 can be manufactured.

[Formation of organic layer 123]
Here, the organic material layer 123 for bonding the first substrate 101 and the support substrate 121 is provided so that the first substrate 101 does not peel from the support substrate 121 when forming at least the EL layer 105 and the second electrode layer 107. May be provided, and can take various forms.

  2A, 2B, and 2C are schematic top views of the organic layer 123 formed on the support substrate 121, respectively. In each figure, a region where the first substrate 101 is arranged is indicated by a broken line.

  In FIG. 2A, an organic layer 123 is provided so as to completely overlap with a region where the first substrate 101 is provided. As described above, the entire back surface of the first substrate 101 is bonded to the support substrate 121 by the organic material layer 123, so that the adhesive strength between the first substrate 101 and the support substrate 121 can be sufficiently increased. it can.

  In addition, by adopting a structure in which the end portion of the first substrate 101 is also bonded by the organic material layer 123, separation from the end portion as a trigger can be suppressed.

  In FIG. 2B, the organic layer 123 is provided in a strip shape (stripe shape) with a certain interval.

  Here, for example, when the linear thermal expansion coefficient of the first substrate 101 is different from that of the support substrate 121, the support substrate 121 is greatly deflected by the expansion and contraction of the first substrate 101 due to a change in temperature during processing. There is a fear.

  Therefore, as shown in FIG. 2B, a plurality of bonding portions between the first substrate 101 and the support substrate 121 are provided at intervals to support the first substrate 101 due to the expansion and contraction described above. The stress applied to the substrate 121 is relieved at least in the short side direction of the band-shaped organic layer 123, and as a result, the amount of deflection of the support substrate 121 can be reduced.

  In addition, as illustrated in FIG. 2C, the organic layer 123 may be provided in an island shape (dot shape) with a certain interval. With such a configuration, the stress applied to the support substrate 121 due to the expansion and contraction of the first substrate 101 can be relieved two-dimensionally. As a result, the amount of deflection of the support substrate 121 is further reduced. be able to.

  The above is the description of the example of the manufacturing method.

<Modification>
In the above manufacturing method example, a manufacturing method of a top emission light-emitting device in which light emission is extracted to the surface side of a substrate over which the light-emitting element is formed is described; however, a light-emitting element is formed by changing a material used for the substrate or the electrode. Thus, a bottom emission type light emitting device that extracts light emission to the back side of the substrate to be manufactured, or a dual emission type light emitting device that extracts light emission to both the front side and the back side of the substrate can be manufactured. Now, a method for manufacturing a bottom emission type light emitting device and a dual emission type light emitting device will be described. In the following, description of the same parts as those described in the example of the manufacturing method is omitted.

[Light emitting device of bottom emission type]
In the bottom emission type light-emitting device, a substrate that transmits light from the light-emitting element 120 is used as the first substrate 101 over which the light-emitting element 120 is formed. For the first electrode layer 103 included in the light-emitting element 120, a material that transmits light emitted from the EL layer 105 is used. For the second electrode layer 107, a material having reflectivity with respect to light emission from the EL layer 105 is used.

  In addition, at least in a region overlapping with the light-emitting element 120, a layer (for example, a planarization layer) provided closer to the first substrate 101 than the light-emitting element 120 has a light-transmitting property with respect to light emission from the light-emitting element 120. Is used.

  In the case of manufacturing a bottom emission light-emitting device, the light-emitting device is manufactured by replacing each material used for the first substrate 101, the first electrode layer 103, and the second electrode layer 107 in the above manufacturing method example. be able to.

  In addition, it is preferable to use a conductive substrate containing a metal or an alloy material as the second substrate 102 because heat dissipation of the light-emitting device is improved.

  In addition, a desiccant or an adsorbent can be provided between the second substrate 102 and the light-emitting element 120. For example, a substance that absorbs moisture by chemical adsorption, such as an alkaline earth metal oxide (such as calcium oxide or barium oxide), can be used as the desiccant. As the adsorbent, a substance that adsorbs moisture by physical adsorption, such as zeolite or silica gel, may be used.

  In addition, since a light-transmitting material does not need to be used for a layer (eg, the sealing layer 119) disposed on the second substrate 102 side of the light-emitting element 120, an optimal material may be selected.

[Double-sided light emitting device]
In the double-sided light-emitting device, a substrate that transmits light from the light-emitting element 120 is used for both the first substrate 101 and the second substrate 102. Further, a material that transmits light from the EL layer 105 is used for both the first electrode layer 103 and the second electrode layer 107 included in the light-emitting element 120.

  Further, a material having a light-transmitting property with respect to light emission from the light-emitting element 120 is used for at least a layer in a region overlapping with the light-emitting element 120 (eg, the sealing layer 119 and the planarization layer 113).

  In the case of manufacturing a light-emitting device of a dual emission type, it can be manufactured by replacing materials used for the first substrate 101 and the first electrode layer 103 in the above-described manufacturing method example.

  In this manner, by applying the manufacturing method example described above, a highly reliable bottom surface light emitting device or a dual surface light emitting device can be manufactured.

  The above is the description of the method for manufacturing the light-emitting device.

<Configuration example>
Hereinafter, structural examples of a light-emitting device that can be manufactured by the method for manufacturing a light-emitting device of one embodiment of the present invention will be described.

  FIG. 3A is a schematic cross-sectional view of the light-emitting device 100.

  The light emitting device 100 is a top emission type light emitting device that emits light to the surface of the first substrate 101 where the light emitting element 120 is formed. In addition, since the first substrate 101 and the second substrate 102 included in the light-emitting device 100 have flexibility, the light-emitting device 100 is a flexible light-emitting device.

  In the light-emitting device 100, a substrate including a conductive material is used as the first substrate 101 over which the light-emitting element 120 is formed. In this manner, by using a material with high heat dissipation for the substrate on which the light emitting element 120 is formed, heat dissipation against heat generation from the light emitting element 120 can be improved.

  As the second substrate, a stacked body in which a glass layer and an organic resin layer are stacked in this order from the side close to the first electrode layer 103 is preferably used. By using a material including a glass layer, diffusion of impurities such as moisture and oxygen from the outside is suppressed, so that a highly reliable light-emitting device can be realized. In addition, by providing the organic resin layer outside the glass layer, the glass layer can be prevented from cracking and cracking, and the strength of the substrate can be increased.

  For example, it is preferable to use a sheet in which a glass layer, an adhesive layer, and an organic resin layer are stacked from the side close to the first electrode layer 103. The thickness of the glass layer is 20 μm or more and 200 μm or less, preferably 25 μm or more and 100 μm or less. The glass layer having such a thickness can simultaneously realize a high barrier property against water and oxygen and flexibility. The thickness of the organic resin layer is 10 μm or more and 200 μm or less, preferably 20 μm or more and 50 μm or less.

  The above is the description of the light emitting device 100.

  FIG. 3B is a schematic cross-sectional view of the light emitting device 130.

  The light emitting device 130 is different from the light emitting device 100 in that an organic layer 123 is provided on a surface (back surface) opposite to a surface on which the light emitting element 120 of the first substrate 101 is formed. ing.

  In this manner, heat dissipation can be improved by using a substrate including a conductive material for the first substrate 101 over which the light-emitting element 120 is provided. Further, by providing the organic layer 123 on the back surface side of the first substrate 101, the exposed surface of the first substrate 101 can be provided with an insulating property, and the handling becomes easy. Further, by using a material containing a chemically stable wax as the organic layer 123, the organic layer 123 acts as a protective film on the surface of the first substrate 101. In addition, since the organic layer 123 can be provided with water repellency by using a material including wax for the organic layer 123, the first substrate including a metal material or an alloy material even in a high humidity environment. Corrosion of 101 itself can be suppressed.

  The above is the description of the light emitting device 130.

  FIG. 3C is a schematic cross-sectional view of the light emitting device 140.

  The light emitting device 140 is a bottom emission type light emitting device that extracts light emitted from the back surface side of the first substrate 101 on which the light emitting element 120 is formed.

  The light emitting element 120 included in the light emitting device 140 includes an EL layer 105, a first electrode layer 103 that transmits light emitted from the EL layer 105, and a second electrode layer 107 that reflects the light emitted.

  In addition, the light-emitting device 140 includes a wiring 117 that is electrically connected to the first electrode layer 103 and extends outward from a region overlapping with the second substrate 102. The wiring 117 is preferably formed using a material having higher conductivity than the conductive material used for the first electrode layer 103. The wiring 117 is preferably formed using the same material as the wiring 111 at the same time.

  Note that in FIG. 3C, the wiring 117 is provided in contact with the first electrode layer 103 and is electrically connected to the first electrode layer 103; however, the first electrode layer 103 and the wiring 117 are electrically connected to each other. The connection method is not limited as long as the connection is established. For example, the first electrode layer 103 may be provided in contact with the wiring 117. An insulating layer including an opening from which part of the wiring 117 is exposed is provided over the wiring 117, and the first electrode is provided over the insulating layer so as to be electrically connected to the wiring 117 through the opening. A layer 103 may be provided.

  Here, the light emitting device 140 is provided with an organic material layer 123 containing wax on the back side of the first substrate 101. Wax has a higher refractive index than air (for example, paraffin has a refractive index of about 1.45) and has light scattering properties. Therefore, the total reflection of light emitted from the translucent first substrate 101 is suppressed as compared with the case where the organic material layer 123 is not provided. Furthermore, since the light incident on the organic layer 123 is scattered in the organic layer 123 and emitted to the outside (air), total reflection at the interface between the organic layer 123 and air is also suppressed. As a result, the light emitting device 140 with improved light extraction efficiency can be realized.

  Further, in order to improve the light scattering property, particles that scatter light may be dispersed in the organic material layer 123. For example, particles of a material having a refractive index different from that of the material used for the organic layer 123 or particles that reflect light can be used. For example, glass or metal particles may be used, or bubbles may be mixed.

  The organic layer 123 also functions as a water-repellent protective film that protects the surface of the first substrate 101 from which light is extracted. In particular, when a substrate having a glass layer is used as the first substrate 101, the mechanical strength can be improved by providing the organic layer 123, and the occurrence of cracks and cracks can be suppressed.

  The above is the description of the light emitting device 140.

  With the structure of the light-emitting device exemplified in this structural example, a flexible and extremely reliable light-emitting device can be realized.

<About materials and forming method>
Hereinafter, a material that can be used for each structure of the light-emitting device of one embodiment of the present invention and a formation method thereof will be described. Note that the material and the formation method are not limited to the following, and any material or formation method that exhibits the same function or effect can be used as appropriate.

[First substrate, second substrate]
As a material for the substrate provided on the light emission side, a light-transmitting material such as glass or organic resin can be used. Further, in the case of a substrate provided on the side opposite to the light emission, it does not have to be translucent, and in addition to the above materials, materials such as metals and colored organic resins can be used. In the case of using a conductive substrate, it is preferable to provide insulation by oxidizing the surface or forming an insulating film on the surface.

  As the metal or alloy material, a metal such as aluminum, copper, iron, nickel, titanium, or magnesium, or an alloy material containing the metal can be used. Stainless steel or duralumin may also be used.

  Examples of a method for insulating the surface of a conductive substrate such as a metal or an alloy include an anodic oxidation method and an electrodeposition method. For example, when an aluminum substrate is used as the substrate, aluminum oxide formed on the surface by an anodic oxidation method is preferable because the insulating property is high, and thus an insulating film can be formed thin. In the electrodeposition method, an organic resin such as a polyamide-imide resin or an epoxy resin can be formed on the substrate surface. Such an organic resin is preferable because it has high insulating properties and is flexible, so that even when the substrate is bent and used, cracks are hardly generated on the surface. In addition, when a material having high heat resistance is selected and used, it is possible to suppress the substrate surface from being deformed by heat generated when the light emitting device is driven.

  When an organic resin is used as the substrate, examples of the organic resin include polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resins, polyimide resins, polymethyl methacrylate resins, and polycarbonate (PC) resins. Polyether sulfone (PES) resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyvinyl chloride resin, or the like can be used. A substrate in which glass fiber is impregnated with an organic resin or a substrate in which an inorganic filler is mixed with an organic resin can also be used.

  In particular, in the case of a top emission light-emitting device, it is preferable to use a substrate having high thermal conductivity such as a metal substrate as the substrate on the side opposite to the light emission on which the light-emitting elements are formed. For example, in the case of a lighting device using a light-emitting element, heat generation from the light-emitting element may be a problem. Therefore, when such a substrate having high thermal conductivity is used, heat dissipation is improved. For example, when aluminum oxide, duralumin or the like is used in addition to the stainless steel substrate, light weight and heat dissipation can be improved. It is preferable to use a stack of aluminum and aluminum oxide, a stack of duralumin and aluminum oxide, a stack of duralumin and magnesium oxide, or the like because the substrate surface can be made insulating.

[Planarization layer]
The flattening layer is formed for the purpose of covering and flattening the uneven shape on the surface of the first substrate. As the planarization layer, an insulating material can be used, and for example, an organic material such as polyimide, acrylic, epoxy, or benzocyclobutene can be used.

  The planarization layer can be formed using a coating method such as a spin coating method or a dip method, a discharge method such as an ink jet method or a dispensing method, a printing method such as screen printing, or the like.

[First electrode layer, second electrode layer, wiring]
Examples of the material used for the electrode layer and wiring on the side opposite to the light emitting side include metals such as aluminum, gold, platinum, silver, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium, or these An alloy containing can be used. Further, lanthanum, neodymium, germanium, or the like may be added to a metal or alloy containing these metal materials. In addition, an alloy containing aluminum such as an alloy of aluminum and titanium, an alloy of aluminum and nickel, an alloy of aluminum and neodymium (aluminum alloy), an alloy containing silver such as an alloy of silver and copper, or an alloy of silver and magnesium is used. You can also. An alloy of silver and copper is preferable because of its high heat resistance. Furthermore, by stacking a metal film or a metal oxide film in contact with the aluminum alloy film, oxidation of the aluminum alloy film can be suppressed. Examples of the material for the metal film and metal oxide film include titanium and titanium oxide. Alternatively, a film formed using the light-transmitting material and a film formed using a metal material may be stacked. For example, a laminated film of silver and indium tin oxide, a laminated film of an alloy of silver and magnesium and indium tin oxide, or the like can be used.

  As a light-transmitting material that can be used for the electrode layer on the light emission side, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide added with gallium, graphene, or the like is used. Can do.

  As the electrode layer, a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, or an alloy thereof can be used. Alternatively, nitrides of these metal materials (for example, titanium nitride) may be used. Note that in the case where a metal material (or a nitride thereof) is used, it may be thinned so as to have a light-transmitting property.

  A stacked film of the above materials can be used as an electrode layer. For example, it is preferable to use a stacked film of an alloy of silver and magnesium and indium tin oxide or the like because conductivity can be increased.

  The first electrode layer 103 and the wiring 111 can be formed by a sputtering method, a vacuum evaporation method, a printing method such as a screen printing method, a discharge method such as an inkjet method or a dispensing method, a plating method, or the like. In the case of a top-emission light-emitting device, it is preferable to form the first electrode layer 103 and the wiring 111 at the same time by using a screen printing method.

  The second electrode layer 107 can be formed by an evaporation method or a sputtering method. Here, the second electrode layer 107 is preferably formed by a face-down method.

[EL layer]
The EL layer 105 may include at least a layer containing a light-emitting organic compound (also referred to as a light-emitting layer), and may be a single layer or a plurality of layers. As an example of a configuration composed of a plurality of layers, a configuration in which a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer are stacked from the anode side can be given as an example. Note that these layers other than the light-emitting layer are not necessarily provided in the EL layer 105. Further, these layers can be provided in an overlapping manner. Specifically, a plurality of light emitting layers may be provided to overlap with the EL layer 105, or a hole injection layer may be provided to overlap with the electron injection layer. In addition to the charge generation layer, other configurations such as an electronic relay layer can be added as appropriate as an intermediate layer. For example, it is good also as a structure which laminates | stacks the light emitting layer which exhibits a different luminescent color. For example, white light emission can be obtained by laminating two or more light emitting layers having a complementary color relationship.

The EL layer 105 can be formed by an evaporation method. Here, the EL layer 105 is preferably formed by a face-down method.
[Insulation layer]
As a material used for the insulating layer 115, in addition to the same material as the planarization layer 113, a negative photosensitive resin that becomes insoluble in an etchant by light irradiation, or a positive photosensitive resin that becomes soluble in an etchant by light irradiation. An organic compound such as a type photosensitive resin, or an inorganic compound such as silicon oxide or silicon oxynitride can be used.

  This embodiment can be implemented in appropriate combination with any of the other embodiments described in this specification.

(Embodiment 2)
In this embodiment, the case where a display device is applied to the method for manufacturing the light-emitting device described in the above embodiment will be described with reference to drawings.

  In the following description, the description overlapping with the contents described in Embodiment 1 will be omitted or simplified.

  A display device formed over the first substrate 101 having plasticity includes a plurality of pixels each including at least one light-emitting element. As a display device, a passive matrix display device in which one pixel includes one light emitting element, or an active matrix display device in which one pixel includes a light emitting element and at least one transistor. There is.

  Hereinafter, an active matrix display device will be described as an example of a display device which can be used for the method for manufacturing the light-emitting device of one embodiment of the present invention.

<Configuration example>
4A illustrates a part of a pixel of the display device 150, and FIG. 4B is a schematic cross-sectional view taken along a cutting line CD in FIG. 4A.

  In the display device 150 illustrated in FIG. 4A, a plurality of source wirings 151 are arranged in parallel with each other and separated from each other, and a plurality of gate wirings 152 intersecting with the source wiring 151 are arranged in parallel with each other and separated from each other. It is arranged. A region surrounded by the source wiring 151 and the gate wiring 152 becomes one pixel of the display device 150, which is arranged in a matrix.

  Each pixel includes the transistors 153 and 154 and the light-emitting element 120 formed over the transistor 154.

  As the first substrate 101, a substrate similar to that in Embodiment 1 can be used.

  4B, the first substrate 101, the adhesive layer 161 provided over the first substrate 101, the insulating layer 163 provided over the adhesive layer 161, and the insulating layer 163 are formed. FIG. 6 is a schematic cross-sectional view including a transistor 154 and a light-emitting element 120 electrically connected to the transistor 154.

  The transistor 154 includes a gate electrode layer, a gate insulating layer, a semiconductor layer, and a source electrode layer and a drain electrode layer.

  There is no particular limitation on the structure of the transistor included in the display device 150. For example, a staggered transistor or an inverted staggered transistor may be used. Further, any transistor structure of a top gate type transistor or a bottom gate type transistor may be employed.

  As a semiconductor material used for the transistor, a semiconductor material such as silicon or germanium may be used, or an oxide semiconductor material containing at least one of indium, gallium, and zinc may be used. There is no particular limitation on the crystallinity of the semiconductor used for the transistor, and the semiconductor is a noncrystalline semiconductor or a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having part of a crystalline region). Any of them may be used. The use of a crystalline semiconductor is preferable because deterioration of transistor characteristics is suppressed.

  The light-emitting element 120 can have a structure similar to that in Embodiment 1, and includes a first electrode layer 103, an EL layer 105, and a second electrode layer 107 which are sequentially stacked. In addition, the first electrode layer 103 is electrically connected to the source electrode layer or the drain electrode layer of the transistor 154 through an opening provided in the insulating layer 165 and the insulating layer 167.

  In addition, an insulating layer 166 covering the light emitting element 120 is formed. The insulating layer 166 is provided to prevent impurities such as water and oxygen from diffusing into the light-emitting element. For example, an inorganic insulating material such as an oxide or nitride of a semiconductor such as silicon or an oxide or nitride of a metal such as aluminum can be used.

  A light emitting element 120 of an adjacent pixel includes an EL layer 105 that exhibits different emission colors. For example, the display device 150 capable of full color display can be obtained by using the light-emitting element 120 including the EL layer 105 that emits red (R), green (G), and blue (B). In addition to the above three colors, a light-emitting element 120 including an EL layer 105 that exhibits yellow (Y) or white (W) emission color may be provided.

  An insulating layer 115 is formed so as to cover the opening provided in the insulating layer 165 and the insulating layer 167 and the first electrode layer 103. The structure of the insulating layer 115 can be the same as that of Embodiment 1.

  The insulating layer 165 functions as a planarization layer for suppressing the influence of the uneven shape by a transistor or the like provided below. By providing the insulating layer 165, a short circuit or the like of the light-emitting element 120 can be suppressed. The insulating layer 165 can be formed using an organic resin or the like.

  The insulating layers 168 and 169 in contact with the semiconductor layer of the transistor and the insulating layer 167 covering the transistor preferably suppress diffusion of impurities into the semiconductor included in the transistor. For these insulating layers, for example, an oxide or nitride of a semiconductor such as silicon, or an oxide or nitride of a metal such as aluminum can be used. Alternatively, a stacked film of such an inorganic insulating material or a stacked film of an inorganic insulating material and an organic insulating material may be used.

  Here, an insulating material can be used for the adhesive layer 161. The adhesive layer 161 has a function of covering the uneven shape of the surface of the first substrate 101 as in the planarization layer 113 illustrated in Embodiment 1. In addition, when a structure including an organic resin in which particles made of a metal or an alloy material are dispersed, heat generated from the light-emitting element 120 can be efficiently conducted to the first substrate 101, so that heat dissipation is further improved. Can do.

  The above is the description of the configuration example of the display device 150.

<Example of production method>
Hereinafter, a method for manufacturing the display device 150 will be described with reference to the drawings.

  First, the separation layer 173 and the insulating layer 163 are stacked over the supporting substrate 171 (FIG. 5A). The insulating layer 163 is preferably formed continuously after being formed without being exposed to the air after the release layer 173 is formed, because mixing of impurities can be suppressed.

  As the support substrate 171, a substrate having a flat surface is used. For example, a substrate made of glass, quartz, sapphire, ceramic or metal can be used. In addition, an organic resin substrate such as a plastic may be used if it has heat resistance to the temperature required for the manufacturing process. Here, in the case of using a plastic substrate, the peeling layer 173 may be unnecessary.

  In this embodiment mode, the separation layer 173 is formed in contact with the support substrate 171, but when a glass substrate is used as the support substrate 171, a silicon oxide film or an oxidation film is formed between the support substrate 171 and the separation layer 173. By forming an insulating layer such as a silicon nitride film, a silicon nitride film, or a silicon nitride oxide film, contamination from the glass substrate can be prevented, which is more preferable.

  The separation layer 173 is formed using an element selected from tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, zirconium, ruthenium, rhodium, palladium, osmium, iridium, and silicon, or an alloy material containing the element, or the element It is a single layer or a laminated layer made of a compound material. The crystal structure of the layer containing silicon may be any of amorphous, microcrystalline, and polycrystalline.

  The peeling layer 173 can be formed by a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. Note that the coating method includes a spin coating method, a droplet discharge method, and a dispensing method.

  In the case where the separation layer 173 has a single-layer structure, a tungsten layer, a molybdenum layer, or a layer containing a mixture of tungsten and molybdenum is preferably formed. Alternatively, a layer containing tungsten oxide or oxynitride, a layer containing molybdenum oxide or oxynitride, or a layer containing an oxide or oxynitride of a mixture of tungsten and molybdenum is formed. Note that the mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum.

  In the case where a stacked layer structure including a layer containing tungsten and a layer containing tungsten oxide is formed as the separation layer 173, a layer containing tungsten is formed, and an insulating layer formed using an oxide is formed thereover. Thus, the fact that a layer containing an oxide of tungsten is formed at the interface between the tungsten layer and the insulating layer may be utilized. Alternatively, the surface of the layer containing tungsten may be subjected to thermal oxidation treatment, oxygen plasma treatment, treatment with a solution having strong oxidizing power such as ozone water, or the like to form the layer containing tungsten oxide. The plasma treatment and the heat treatment may be performed in an atmosphere of oxygen, nitrogen, nitrous oxide alone, or a mixed gas atmosphere of the gas and other gases. By changing the surface state of the separation layer 173 by the plasma treatment or the heat treatment, adhesion between the separation layer 173 and the insulating layer 163 to be formed later can be controlled.

  Next, the insulating layer 163 is formed over the separation layer 173. The insulating layer 163 is preferably formed using a single layer or multiple layers of silicon nitride, silicon oxynitride, silicon nitride oxide, or the like.

  The insulating layer 163 can be formed by a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. For example, the insulating layer 163 can be formed at a film formation temperature of 250 ° C. to 400 ° C. by a plasma CVD method. , A dense and very low water-permeable film can be obtained. Note that the thickness of the insulating layer 163 is preferably 10 nm to 3000 nm, and more preferably 200 nm to 1500 nm.

  Subsequently, a transistor 153 (not shown), a transistor 154, a source wiring 151, a gate wiring 152 (not shown), and the like are formed over the insulating layer 163. Here, a bottom-gate transistor is manufactured.

  First, after forming a conductive film to be a gate electrode layer, unnecessary portions of the conductive film are removed using a known photolithography method, and a gate electrode layer is formed. Note that a wiring formed of the same layer as the gate electrode layer is formed at the same time.

  The gate electrode layer is formed of a single layer or stacked layers using a metal material such as molybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper, neodymium, scandium, or an alloy material containing these elements. Can do.

Next, an insulating layer 169 to be a gate insulating layer is formed over the gate electrode layer. The insulating layer 169 can be formed using a single layer or a stack of silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, or aluminum oxide by a plasma CVD method, a sputtering method, or the like. For example, a silicon oxynitride film may be formed by a plasma CVD method using SiH ₄ or N ₂ O as a deposition gas.

  Next, a semiconductor film is formed, and an island-shaped semiconductor layer is formed using a photolithography method.

  The semiconductor film can be formed using a silicon semiconductor or an oxide semiconductor. As the silicon semiconductor, single crystal silicon, polycrystalline silicon, microcrystalline silicon, or the like can be given. As the oxide semiconductor, for example, an oxide semiconductor containing at least one of In, Ga, and Zn can be used. Typically, an In—Ga—Zn—O-based metal oxide can be given. However, as the semiconductor layer, an oxide semiconductor that is an In—Ga—Zn—O-based metal oxide is used to form a semiconductor layer with a low off-state current, so that a leakage current when the light-emitting element to be formed later is off Can be suppressed, which is preferable.

  Subsequently, after an insulating film covering the semiconductor layer is formed, an insulating layer 168 in which an opening exposing a part of the semiconductor layer is formed by photolithography.

  Then, after forming a conductive film, a source electrode and a drain electrode are formed using a photolithography method. At the same time, a wiring formed in the same layer as the source electrode and the drain electrode is formed.

As the conductive film used for the source electrode and the drain electrode, for example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, W, or a metal nitride film containing the above-described element (titanium nitride) A film, a molybdenum nitride film, a tungsten nitride film, or the like can be used. Further, a refractory metal film such as Ti, Mo, W or the like or a metal nitride film thereof (titanium nitride film, molybdenum nitride film, tungsten nitride film) is provided on one or both of the lower side or the upper side of a metal film such as Al or Cu. It is good also as a structure which laminated | stacked. The conductive film used for the source and drain electrode layers may be formed using a conductive metal oxide. Examples of conductive metal oxides include indium oxide (such as In ₂ O ₃ ), tin oxide (such as SnO ₂ ), zinc oxide (ZnO), indium tin oxide (such as In ₂ O ₃ —SnO ₂ ), and indium oxide oxidation. Zinc (such as In ₂ O ₃ —ZnO) or a metal oxide material containing silicon oxide can be used.

  Through the above process, the transistor 154 is formed.

  Next, the insulating layer 167 is formed over the semiconductor layer, the source electrode, and the drain electrode. As the insulating layer 167, an inorganic insulating film such as a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film can be used.

  Next, the insulating layer 165 is formed over the insulating layer 167 (see FIG. 5B).

  As the insulating layer 165, an insulating film having a planarization function is preferably selected in order to reduce surface unevenness due to the transistor. For example, an organic material such as polyimide, acrylic, or benzocyclobutene resin can be used. In addition to the organic material, a low dielectric constant material (low-k material) or the like can be used. Note that the insulating layer 165 may be formed by stacking a plurality of insulating films formed using these materials.

  Next, an opening reaching the source electrode or the drain electrode is formed in the insulating layer 165 and the insulating layer 167 by photolithography. The opening method may be selected as appropriate, such as dry etching or wet etching. Alternatively, a photosensitive material is used for the insulating layer 165, and the insulating layer 165 including an opening is formed by a photolithography method, and then the insulating layer 167 is partly etched using this as a mask to form the opening. May be. Alternatively, the opening may be formed after the insulating layer 167 is formed, and then the insulating layer 165 including the opening may be formed.

  Next, a conductive film is formed over the insulating layer 165, and the first electrode layer 103 that is electrically connected to the source electrode or the drain electrode of the transistor 154 is formed by a photolithography method.

  Next, an insulating layer 115 is formed to cover an end portion of the first electrode layer 103 and an opening formed in the insulating layer 165 (see FIG. 5C).

  Subsequently, separation (separation) is performed between the insulating layer 163 and the separation layer 173 (see FIG. 6A). Various methods can be used for the peeling method.

  For example, the metal oxide film is formed at the interface between the separation layer 173 and the insulating layer 163 by heating the separation layer 173 and the insulating layer 163 during the formation process of the transistor. A groove reaching the peeling layer 173 is formed (not shown), and the metal oxide film becomes brittle due to the groove, and peeling occurs at the interface between the peeling layer 173 and the insulating layer 163.

The peeling method may be performed by applying a mechanical force (a process of peeling with a human hand or a jig, a process of separating while rotating a roller, or the like). Alternatively, the insulating layer 163 may be peeled from the peeling layer 173 by dropping liquid into the groove and allowing the liquid to penetrate into the interface between the peeling layer 173 and the insulating layer 163. Also, a method of peeling the insulating layer 163 from the support substrate 171 having an insulating surface by introducing a fluorinated gas such as NF ₃ , BrF ₃ , or ClF ₃ into the groove and etching and removing the peeling layer 173 with the fluorinated gas. May be used.

  As another peeling method, when the peeling layer 173 is formed of tungsten, peeling can be performed while etching the peeling layer with a mixed solution of ammonia water and hydrogen peroxide water.

  Further, a film containing nitrogen, oxygen, hydrogen, or the like (eg, an amorphous silicon film containing hydrogen, a hydrogen-containing alloy film, an oxygen-containing alloy film, or the like) is used as the separation layer 173, and the supporting substrate 171 has a light-transmitting property. In the case of using a substrate, a laser beam is irradiated from the support substrate 171 to the peeling layer 173 to vaporize nitrogen, oxygen, and hydrogen contained in the peeling layer, and between the support substrate 171 and the peeling layer 173. A peeling method can be used.

  Next, the insulating layer 163 and the first substrate 101 are attached to each other using the adhesive layer 161 (see FIG. 6B). This process is also called transcription.

  As the adhesive layer 161, various curable adhesives such as a photocurable adhesive such as an ultraviolet curable adhesive, a reactive curable adhesive, a thermosetting adhesive, or an anaerobic adhesive can be used. As materials for these adhesives, epoxy resins, acrylic resins, silicone resins, phenol resins, and the like can be used.

  Through the above steps, the structure formed over the supporting substrate 171 can be transferred onto the plastic first substrate 101 (see FIG. 6C).

  Subsequently, the EL layer 105 and the second electrode layer 107 are formed by using the method exemplified in Embodiment 1. Here, the insulating layer 166 functioning as a protective film is formed over the second electrode layer 107.

  Specifically, the first substrate 101 over which a transistor or the like is formed is bonded to the supporting substrate 121 with an organic material layer 123, and the EL layer 105, the second electrode layer 107, and the insulating layer 166 are sequentially formed by a face-down method. Form.

  Here, the EL layer 105 is selectively formed by a vapor deposition method using a metal mask to exhibit different emission colors in adjacent pixels.

  Note that an EL layer that emits white light in common as the EL layer 105 may be used, and a color filter that transmits different light may be provided above the light-emitting elements 120 of adjacent pixels to display full color. . In that case, a color filter is formed over the insulating layer 166 or formed in advance on one surface of the second substrate 102. It is preferable to use a white light-emitting EL layer in common because a metal mask for separately painting pixels is not necessary.

  One of the first electrode layer 103 and the second electrode layer 107 functions as an anode of the light-emitting element 120, and the other functions as a cathode of the light-emitting element 120. A material having a high work function is preferable for the electrode functioning as the anode, and a material having a low work function is preferable for the electrode functioning as the cathode.

  Through the above steps, the light emitting element 120 is formed.

  Finally, an insulating layer 166 that covers the second electrode layer 107 is formed.

  After that, the first substrate 101 and the second substrate 102 are bonded to each other with the sealing layer 119 by the method illustrated in Embodiment Mode 1. Subsequently, the organic layer 123 is heated and melted, and the first substrate 101 is peeled from the support substrate 121, whereby the display device 150 can be manufactured.

  A schematic cross-sectional view at this stage corresponds to FIG.

  The above is the description of the example of the manufacturing method.

  According to such a method, a flexible and extremely reliable light-emitting device can be manufactured.

  This embodiment can be implemented in combination with any of the other embodiments and examples described in this specification as appropriate.

(Embodiment 3)
In this embodiment, examples of an electronic device or a lighting device to which the light-emitting device of one embodiment of the present invention is applied will be described with reference to drawings.

  As an electronic device to which a light-emitting device having a flexible shape is applied, for example, a television device (also referred to as a television or a television receiver), a monitor for a computer, a digital camera, a digital video camera, a digital photo frame, a mobile phone (Also referred to as a mobile phone or a mobile phone device), a portable game machine, a portable information terminal, a sound reproduction device, a large game machine such as a pachinko machine, and the like.

  It is also possible to incorporate lighting and display devices along the inner or outer wall of a house or building, or along the curved surface of the interior or exterior of an automobile.

  FIG. 7A illustrates an example of a mobile phone. A mobile phone 7400 is provided with a display portion 7402 incorporated in a housing 7401, operation buttons 7403, an external connection port 7404, a speaker 7405, a microphone 7406, and the like. Note that the cellular phone 7400 is manufactured using the light-emitting device for the display portion 7402.

  Information can be input to the cellular phone 7400 illustrated in FIG. 7A by touching the display portion 7402 with a finger or the like. In addition, any operation such as making a call or inputting characters can be performed by touching the display portion 7402 with a finger or the like.

  Further, by operating the operation button 7403, the power can be turned on and off, and the type of image displayed on the display portion 7402 can be switched. For example, the mail creation screen can be switched to the main menu screen.

  Here, the display portion 7402 incorporates the light-emitting device of one embodiment of the present invention. Therefore, a highly reliable mobile phone including a curved display portion can be provided.

  FIG. 7B illustrates an example of a wristband display device. A portable display device 7100 includes a housing 7101, a display portion 7102, operation buttons 7103, and a transmission / reception device 7104.

  The portable display device 7100 can receive a video signal by the transmission / reception device 7104 and can display the received video on the display portion 7102. Also, the audio signal can be transmitted to another receiving device.

  Further, the operation button 7103 can be used to perform power ON / OFF operation, switching of a video to be displayed, or adjusting an audio volume.

  Here, the display portion 7102 incorporates the light-emitting device of one embodiment of the present invention. Therefore, the portable display device can be provided with a curved display portion and high reliability.

  7C to 7E illustrate an example of a lighting device. Each of the lighting devices 7200, 7210, and 7220 includes a base portion 7201 including an operation switch 7203 and a light-emitting portion supported by the base portion 7201.

  A lighting device 7200 illustrated in FIG. 7C includes a light-emitting portion 7202 having a wavy light-emitting surface. Therefore, the lighting device has high design.

  A light emitting portion 7212 included in the lighting device 7210 illustrated in FIG. 7D has a structure in which two light emitting portions curved in a convex shape are arranged symmetrically. Accordingly, all directions can be illuminated with the lighting device 7210 as the center.

  A lighting device 7220 illustrated in FIG. 7E includes a light-emitting portion 7222 that is curved in a concave shape. Therefore, since the light emitted from the light emitting unit 7222 is condensed on the front surface of the lighting device 7220, it is suitable for brightly illuminating a specific range.

  In addition, since each light-emitting portion included in the lighting device 7200, the lighting device 7210, and the lighting device 7220 has flexibility, the display portion is fixed with a member such as a plastic member or a movable frame so that it matches an application. Thus, the light emitting surface of the light emitting unit may be configured to be freely curved.

  Here, the display portion 7102 incorporates the light-emitting device of one embodiment of the present invention. Therefore, a highly reliable lighting device including a curved display portion can be provided.

  FIG. 8A illustrates an example of a portable display device. The display device 7300 includes a housing 7301, a display portion 7302, operation buttons 7303, a drawer member 7304, and a control portion 7305.

  The display device 7300 includes a flexible display portion 7102 wound in a roll shape within a cylindrical housing 7301.

  Further, the display device 7300 can receive a video signal by the control unit 7305 and can display the received video on the display unit 7302. In addition, the control unit 7305 is provided with a battery. Alternatively, the control unit 7305 may be provided with a connector so that a video signal and power are directly supplied.

  An operation button 7303 can be used to turn on / off the power, switch a displayed image, and the like.

  FIG. 8B shows a state where the display portion 7302 is pulled out by the pullout member 7304. In this state, an image can be displayed on the display portion 7302. An operation button 7303 arranged on the surface of the housing 7301 can be easily operated with one hand.

  Note that a reinforcing frame may be provided at an end portion of the display portion 7302 so that the display portion 7302 is not curved when the display portion 7302 is pulled out.

  In addition to this configuration, a speaker may be provided in the housing, and audio may be output by an audio signal received together with the video signal.

  In the display portion 7302, the light-emitting device of one embodiment of the present invention is incorporated. Therefore, since the display portion 7302 is a flexible and reliable display device, the display device 7300 can be a lightweight and highly reliable display device.

  Note that it is needless to say that the electronic device or the lighting device is not particularly limited as long as the light-emitting device of one embodiment of the present invention is included.

  This embodiment can be implemented in appropriate combination with any of the other embodiments described in this specification.

100 light emitting device 101 first substrate 102 second substrate 103 first electrode layer 105 EL layer 107 second electrode layer 111 wiring 113 planarization layer 115 insulating layer 117 wiring 119 sealing layer 120 light emitting element 121 support substrate 123 Organic layer 125 Heating means 130 Light emitting device 140 Light emitting device 150 Display device 151 Source wiring 152 Gate wiring 153 Transistor 154 Transistor 161 Adhesive layer 163 Insulating layer 165 Insulating layer 166 Insulating layer 167 Insulating layer 168 Insulating layer 169 Insulating layer 171 Support substrate 173 Peeling Layer 7100 Portable display device 7101 Housing 7102 Display unit 7103 Operation button 7104 Transmission / reception device 7200 Illumination device 7201 Base unit 7202 Light emission unit 7203 Operation switch 7210 Illumination device 7212 Light emission unit 7220 Illumination device 7222 Light emission unit 73 0 Display device 7301 housing 7302 display unit 7303 operation button 7304 drawer 7305 controller 7400 mobile phone 7401 housing 7402 display unit 7403 operation button 7404 an external connection port 7405 speaker 7406 microphone

Claims (7)

Forming a first electrode on one surface of a flexible first substrate;
Providing an organic layer on one surface of the support substrate;
After the organic material layer is heated and melted, the back surface of the first substrate facing the one surface and the organic material layer are brought into close contact with each other, and then the organic material layer is cooled and solidified to form the first substrate. And the support substrate are bonded through the organic layer,
Forming a layer containing a light-emitting organic compound on the first electrode, forming a second electrode on the layer containing the light-emitting organic compound;
Peeling the first substrate from the support substrate in a state where the organic layer is heated and melted, and
A material containing an organic compound having a melting point of 30 ° C. or higher and 150 ° C. or lower is used for the organic layer.
A method for manufacturing a light-emitting device. Forming a first electrode on one surface of a flexible first substrate;
Providing an organic layer on one surface of the support substrate;
After the organic material layer is heated and melted, the back surface of the first substrate facing the one surface and the organic material layer are brought into close contact with each other, and then the organic material layer is cooled and solidified to form the first substrate. And the support substrate are bonded through the organic layer,
Forming a layer containing a light-emitting organic compound on the first electrode, forming a second electrode on the layer containing the light-emitting organic compound;
Adhering the second substrate facing the one surface of the first substrate and having flexibility and the first substrate through a sealing layer;
Peeling the first substrate from the support substrate in a state where the organic layer is heated and melted, and
A material containing an organic compound having a melting point of 30 ° C. or higher and 150 ° C. or lower is used for the organic layer.
A method for manufacturing a light-emitting device. The first substrate and the second substrate are:
Use either metal material or alloy material for either
For either one, a material that transmits light emitted from the light-emitting organic compound is used.
A method for manufacturing a light-emitting device according to claim 2. The first substrate and the second substrate are:
Use either metal material or alloy material for either
On the other side, a glass layer and an organic resin layer are sequentially laminated from the side close to the first electrode, and a laminate that transmits light emitted from the light-emitting organic compound is used.
A method for manufacturing a light-emitting device according to claim 2. A first substrate having flexibility;
A first electrode provided on one surface of the first substrate;
A layer containing a light-emitting organic compound provided on the first electrode;
A second electrode provided on the layer containing the light-emitting organic compound;
A second substrate facing the one surface of the first substrate and having flexibility;
A sealing layer for bonding the first substrate and the second substrate;
An organic layer provided on the back surface of the first substrate facing the one surface,
The first substrate is made of a metal material or an alloy material,
The second substrate is made of a material that transmits light emitted from the light-emitting organic compound,
The organic layer includes a wax having a melting point of 30 ° C. or higher and 150 ° C. or lower.
Light emitting device. The second substrate is a laminate in which a glass layer and an organic resin layer are sequentially laminated from the side close to the first electrode, and transmits light emitted from the light-emitting organic compound.
The light emitting device according to claim 5. A first substrate having flexibility;
A first electrode provided on one surface of the first substrate;
A layer containing a light-emitting organic compound provided on the first electrode;
A second electrode provided on the layer containing the light-emitting organic compound;
A second substrate facing the one surface of the first substrate and having flexibility;
A sealing layer for bonding the first substrate and the second substrate;
An organic layer provided on the back surface of the first substrate facing the one surface,
The first substrate is made of a material that transmits light from the light-emitting organic compound,
The second substrate is made of a metal material or an alloy material,
The organic layer includes a wax having a melting point of 30 ° C. or higher and 150 ° C. or lower.
Light emitting device.

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