JP7008054B2 - Photoelectric converters and equipment - Google Patents

Description

The present invention relates to photoelectric conversion devices and devices.

Patent Document 1 discloses a photoelectric conversion device in which a light-shielding portion is provided in a light-receiving pixel region in which pixels that receive light from a subject are arranged to prevent light from being incident on adjacent pixels. The photoelectric conversion device has a pixel region including a light receiving pixel region and an OB pixel region. The photoelectric conversion device is composed of a plurality of light receiving portions arranged on a semiconductor layer, an insulator arranged on the semiconductor layer, and the insulator as a configuration shared in the light receiving pixel region and the OB pixel region. It has a plurality of waveguides arranged on the plurality of light receiving portions so as to be surrounded. Further, the photoelectric conversion device includes a connecting member for connecting the plurality of waveguides to each other and a first member arranged on the connecting member as a configuration shared in the light receiving pixel region and the OB pixel region. Has. The photoelectric conversion device includes a first lens arranged on the first member and a light-shielding portion arranged between the first lens and an insulator so as to be arranged only in the light receiving pixel region. It has a color filter and a second lens arranged on the first lens. The photoelectric conversion device has a light-shielding portion for the OB pixel region arranged on the first member and the light-shielding portion as a configuration arranged only in the OB pixel region.
In the photoelectric conversion device described in Patent Document 1, the light-shielding portion is not arranged in the light-receiving pixel region at a position higher than the light-shielding portion for the OB pixel region. Therefore, the light obliquely incident on the light receiving pixel region becomes stray light and penetrates below the light shielding portion for the OB pixel region, which can be incident on the light receiving portion in the OB pixel region. Therefore, it may not be possible to correctly detect the optical black level by the light receiving portion in the OB pixel region.

Japanese Unexamined Patent Publication No. 2014-36037

The present invention provides an advantageous technique for suppressing stray light.

The first aspect of the present invention relates to a photoelectric conversion device having a light receiving pixel region and a light shielding pixel region, and the photoelectric conversion device is provided in a plurality of photoelectric conversion units provided in the light receiving pixel region and the light shielding pixel region. On the semiconductor layer having the plurality of photoelectric conversion units provided and the semiconductor layer in the light receiving pixel region, the optical path of light incident on the plurality of photoelectric conversion units provided in the light receiving pixel region is surrounded. The light-shielding portion comprises an arranged light-shielding portion and a light-shielding film arranged on the semiconductor layer in the light-shielding pixel region so as to cover the plurality of photoelectric conversion portions provided in the light-shielding pixel region. The lower end, which is the end on the side of the semiconductor layer in the direction perpendicular to the main surface of the semiconductor layer, and the upper end, which is the end opposite to the lower end of the light-shielding portion in the direction perpendicular to the main surface. The light-shielding film has a lower surface that is a surface on the side of the semiconductor layer in the vertical direction and an upper surface that is a surface opposite to the semiconductor layer in the vertical direction, and the lower surface has a lower surface. Along the main surface of the semiconductor layer so as to face the plurality of photoelectric conversion portions provided in the light-shielding pixel region, the distance between the upper end of the light-shielding portion and the semiconductor layer is the light-shielding. The distance between the upper surface of the film and the semiconductor layer is larger than the distance between the upper surface of the light-shielding film and the semiconductor layer, and the distance between the lower end of the light-shielding portion and the semiconductor layer is smaller than the distance between the upper surface of the light-shielding film and the semiconductor layer. Moreover, it is larger than the distance between the lower surface of the light-shielding film and the semiconductor layer.

INDUSTRIAL APPLICABILITY According to the present invention, an advantageous technique for suppressing stray light is provided.

The plan view which shows the structure of the photoelectric conversion apparatus of 1st Embodiment of this invention. The cross-sectional view which shows the structure of the photoelectric conversion apparatus of 1st Embodiment of this invention. The cross-sectional view which shows the manufacturing method of the photoelectric conversion apparatus of 1st Embodiment of this invention. The cross-sectional view which shows the manufacturing method of the photoelectric conversion apparatus of 1st Embodiment of this invention. The cross-sectional view which shows the manufacturing method of the photoelectric conversion apparatus of 1st Embodiment of this invention. The cross-sectional view which shows the manufacturing method of the photoelectric conversion apparatus of 1st Embodiment of this invention. The cross-sectional view which shows the structure of the photoelectric conversion apparatus of 2nd Embodiment of this invention. The figure which shows the structural example of the light-shielding part. The figure which illustrates the structure which gives a fixed potential to a light-shielding part and a light-shielding film. The figure which shows the structural example of the light-shielding part. The cross-sectional view which shows the structure of the photoelectric conversion apparatus of 3rd Embodiment of this invention. The plan view which shows the structure of the photoelectric conversion apparatus of 4th Embodiment of this invention. The cross-sectional view which shows the structure of the photoelectric conversion apparatus of 4th Embodiment of this invention. The cross-sectional view which shows the manufacturing method of the photoelectric conversion apparatus of 4th Embodiment of this invention. The cross-sectional view which shows the manufacturing method of the photoelectric conversion apparatus of 4th Embodiment of this invention. The cross-sectional view which shows the manufacturing method of the photoelectric conversion apparatus of 4th Embodiment of this invention. The cross-sectional view which shows the manufacturing method of the photoelectric conversion apparatus of 4th Embodiment of this invention. The plan view which shows the structure of the photoelectric conversion apparatus of 5th Embodiment of this invention. The cross-sectional view which shows the structure of the photoelectric conversion apparatus of 5th Embodiment of this invention. The cross-sectional view which shows the structure of the photoelectric conversion apparatus of 6th Embodiment of this invention. The figure which shows the configuration example of a device. The cross-sectional view which shows the structure of the photoelectric conversion apparatus of 7th Embodiment of this invention. The cross-sectional view which shows the structure of the photoelectric conversion apparatus of 8th Embodiment of this invention. The cross-sectional view which shows the structure of the photoelectric conversion apparatus of the 9th Embodiment of this invention. FIG. 24 is a cross-sectional view taken along the line ZZ of FIG. 24. FIG. 24 is a cross-sectional view taken along the line ZZ of FIG. 24. FIG. 6 is a cross-sectional view to capture the description with reference to FIG.

Hereinafter, the present invention will be described through an exemplary embodiment with reference to the accompanying drawings.

As used herein, A is higher than B means that the distance between A and the main surface of the semiconductor layer is greater than the distance between B and the main surface, and A is lower than B. , A means that the distance between the main surface is smaller than the distance between B and the main surface. In the present specification, the lower end of A means the end of the two ends of A in the direction perpendicular to the main surface on the side of the semiconductor layer, and the upper end of A is perpendicular to the main surface. It means the end opposite to the lower end of the two ends of A in the above direction. In the present specification, the lower surface of A means the surface of the two surfaces of A intersecting (or orthogonal to) the direction perpendicular to the main surface, and the upper surface of A is the surface on the side of the semiconductor layer. It means the surface of the two surfaces of A that intersects (or is orthogonal to) the direction perpendicular to the main surface and is opposite to the lower surface.

FIG. 1 is a plan view showing the configuration of the photoelectric conversion device 100 according to the first embodiment of the present invention. The photoelectric conversion device 100 includes a light receiving pixel area 101, a light blocking pixel area (OB pixel area) 102, and a peripheral circuit area 103. The light receiving pixel area 101 is an area in which a plurality of photoelectric conversion units (first photoelectric conversion units) are arranged so as to form a plurality of rows and a plurality of columns. In other words, the light receiving pixel area 101 is an area in which a plurality of pixels (first pixels) are arranged so as to form a plurality of rows and a plurality of columns. The signal of the first photoelectric conversion unit (first pixel) of each row of the light receiving pixel region 101 is output through the row signal line. The light-shielding pixel area 102 is an area in which a plurality of light-shielded photoelectric conversion units (second photoelectric conversion units) are arranged so as to form a plurality of rows and a plurality of columns. In other words, the light-shielding pixel area 102 is an area in which a plurality of light-shielded pixels (second pixel) are arranged. The shaded pixels are used to provide optical black levels and may be referred to as optical black (OB) pixels. A buffer region including a pixel structure may be included between the light-receiving pixel region 101 and the light-shielding pixel region 102. The pixels of the light receiving pixel region 101 and the pixels of the light shielding pixel region 102 include, in addition to the photoelectric conversion unit, a circuit element for outputting a signal corresponding to the charge generated in the photoelectric conversion unit to the outside of the pixel.

Peripheral circuit area 103 may include, for example, a row selection circuit, a read circuit, and a column selection circuit. The plurality of photoelectric conversion units arranged in the light receiving pixel region 101 and the plurality of photoelectric conversion units arranged in the light shielding pixel region 102 together form a photoelectric conversion array composed of a plurality of rows and a plurality of columns. Can be placed. The row selection circuit selects a row in the photoelectric conversion array and drives the photoelectric conversion unit of the selected row. The signal of the photoelectric conversion unit of the row selected by the row selection circuit is output to the read circuit through the column signal line. The read circuit reads the signal output to each column signal line, and the column selection circuit sequentially selects and outputs a plurality of signals read by the read circuit from the plurality of column signal lines.

FIG. 2 is a schematic cross-sectional view taken along the line AA of the photoelectric conversion device 100 of FIG. In the following, the terms first conductive type and second conductive type will be used to distinguish N type and P type from each other. When the first conductive type is N type, the second conductive type is P type, and when the first conductive type is P type, the second conductive type is N type. The photoelectric conversion device 100 may include a semiconductor layer 110. The semiconductor layer 110 is, for example, a first conductive type (for example, N type) semiconductor region, and can be formed, for example, by an epitaxial growth method. A first conductive type semiconductor region (only partially shown) and a second conductive type semiconductor region (only partially shown) may be arranged on the semiconductor layer 110. The semiconductor layer 110 has a main surface 111. The main surface 111 may be, for example, an interface between the semiconductor layer 110 and an insulating film (not shown) laminated on the semiconductor layer 110. Light is incident on the semiconductor layer 110 through the main surface 111. In FIG. 2, the direction in which the light is incident is mainly indicated by the arrow L.

The semiconductor layer 110 may have a plurality of photoelectric conversion units (first photoelectric conversion unit) 112a in the light receiving pixel region 101 and a plurality of photoelectric conversion units (second photoelectric conversion unit) 112b in the light shielding pixel region 102. The photoelectric conversion units 112a and 112b may be a first conductive type semiconductor region constituting a part of the photodiode. The electric charge generated by the photoelectric conversion can be collected by the photoelectric conversion units 112a and 112b. The second conductive type semiconductor region 113 may be arranged on the photoelectric conversion units 112a and 112b. The semiconductor region 113 may be arranged so as to be in contact with the main surface 111 of the semiconductor layer 110. The semiconductor region 113 may be a region having a charge having the same code as the majority carrier in the second conductive type.

The semiconductor layer 110 may include a floating diffusion (hereinafter, FD) 114. FD 114 is a first conductive type semiconductor region. The electric charges generated by the photoelectric conversion units 112a and 112b are transferred to the FD 114 and converted into a voltage. The FD 114 may be electrically connected to an input node of an amplification unit (not shown). The amplification unit may be provided for each one or a plurality of pixels. A gate electrode 115 may be arranged on the semiconductor layer 110 via a gate insulating film. The gate electrode 115 arranged on the region between the photoelectric conversion units 112a and 112b and the FD 114 is a transfer gate electrode that controls the transfer of electric charges from the photoelectric conversion unit 112 to the FD 114.

The protective film 120 may be arranged so as to cover the semiconductor layer 110 and the gate electrode 115. An insulating film 121 may be arranged on the semiconductor layer 110 or the protective film 120. The insulating film 121 may be made of, for example, silicon oxide. The refractive index of the insulating film 121 is, for example, in the range of 1.40 to 1.60. A first wiring layer 123, a second wiring layer 124, and a third wiring layer 133 may be arranged on the main surface 111 of the semiconductor layer 110. The first wiring layer 123, the second wiring layer 124, and the third wiring layer 133 are arranged at different heights with respect to the main surface 111 of the semiconductor layer 110. In one example, the conductive material of the first wiring layer 123 and the second wiring layer 124 may be copper, and the conductive material of the third wiring layer 133 may be aluminum. In one example, the third wiring layer 133 may constitute a wiring layer for the pad and peripheral circuit area 103. The conductive material may be any material having conductivity and may be a material other than copper or aluminum. The first wiring layer 123 and the second wiring layer 124 may be electrically connected by a plug (not shown). The second wiring layer 124 and the third wiring layer 133 may be electrically connected by a plug (not shown). Except for the portion electrically connected by the plug, the conductive member of the first wiring layer 123 and the conductive member of the second wiring layer 124 are insulated from each other by the insulating film 121, and the conductive member of the second wiring layer 124 and the second wiring member are insulated from each other. 3 The conductive member of the wiring layer 133 is insulated from each other by the insulating film 121. The insulating film 121 can function as an interlayer insulating film. The number of wiring layers is not limited to three.

The photoelectric conversion device 100 expands so as to connect a plurality of waveguides 130 arranged in an optical path of light incident on each of the plurality of first photoelectric conversion units 112a of the light receiving pixel region 101 and a plurality of waveguides 130 to each other. It may be provided with a connecting portion 131. The plurality of waveguides 130 and the connecting portion 131 may be made of the same material as each other. In one example, the plurality of waveguides 130 and the connecting portion 131 may be composed of silicon nitride. The refractive index of the members constituting the plurality of waveguides 130 is higher than the refractive index of the insulating film 121. The refractive index of the members constituting the plurality of waveguides 130 is preferably 1.60 or more, and more preferably in the range of 1.80 to 2.40. The waveguide 130 may also be arranged on each of the plurality of second photoelectric conversion units 112a of the light-shielding pixel region 102. Similarly, the connecting portion 131 may expand to connect the plurality of waveguides 130 in the light-shielding pixel region 102 to each other. The connecting portion 131 of the light receiving pixel region 101 and the connecting portion 131 of the light shielding pixel region 102 can be spread so as to be connected to each other. In the example of FIG. 2, the connecting portion 131 is not arranged in the peripheral circuit area 103, but the connecting portion 131 may be arranged in the peripheral circuit area 103 as well.

On the insulating film 121, the plurality of waveguides 130, and the connecting portion 131, the insulating film 132 may be arranged so as to extend over the light receiving pixel region 101 and the light shielding pixel region 102. In another aspect, the insulating film 132 is arranged on the main surface 111 of the semiconductor layer 110 so as to extend over the light receiving pixel region 101 and the light shielding pixel region 102. The insulating film 132 may be made of, for example, silicon oxide. A light-shielding film 134 may be arranged on the insulating film 132 so as to cover the plurality of second photoelectric conversion units 112a of the light-shielding pixel region 102. The light-shielding film 134 may be made of, for example, a metal material. The light-shielding film 134 is arranged for the purpose of blocking the incident light on the plurality of second photoelectric conversion units 112a of the light-shielding pixel region 102. The lower surface of the light-shielding film 134 is along the main surface 111 of the semiconductor layer 110 so as to face the plurality of photoelectric conversion units 112b provided in the light-shielding pixel region 102. In one example, the third wiring layer 133 and the light-shielding film 134 may be arranged in the same layer and made of the same material, but the third wiring layer 133 and the light-shielding film 134 are arranged in different layers from each other. It may be composed of different materials from each other.

A translucent film (insulator) 140 may be further arranged on the main surface 111 of the semiconductor layer 110. The translucent film 140 may be arranged so as to cover the insulating film 132, the light-shielding film 134, and the third wiring layer 133. The translucent film 140 may include a plurality of in-layer lenses 141 arranged in optical paths of light incident on the plurality of first photoelectric conversion units 112a of the light receiving pixel region 101. At least one of the upper surface and the lower surface of the translucent film 140 having the intra-layer lens 141 may have a convex lens shape. In this example, the upper surface of the translucent film 140 has a convex lens shape, and the lower surface of the translucent film 140 is flat. However, when the in-layer lens 141 is not provided, the upper surface and the lower surface of the translucent film 140 may be flat. The translucent film 140 may be arranged so as to cover the light-shielding film 134 in the light-shielding pixel region 102. When the in-layer lens 141 is arranged in the light-shielding pixel region 102, the height of the structure on the light-shielding film 134 becomes high. Therefore, it is preferable that the in-layer lens 141 is not arranged in the light-shielding pixel region 102. An insulating film (insulating film 142) for flattening may be arranged so as to cover the in-layer lens 141 at least on the in-layer lens 141 in the translucent film 140. The insulating film 142 may be in contact with the in-layer lens 141, or a reflection provided between the in-layer lens 141 and the insulating film 142 so as to cover the in-layer lens 141 while in contact with the in-layer lens 141. An anti-reflection coating may be arranged.

The translucent film 140 is a silicon compound film composed of a compound containing silicon and nitrogen, and the translucent film 140 is a translucent film such as another resin film or a silicon oxide film in that it is a silicon compound film containing nitrogen. It can be distinguished from the membrane. The translucent film 140 can have a multi-layer structure composed of a plurality of silicon compound layers, each of which is composed of a compound containing silicon and nitrogen. The silicon compound layer that can be contained in the translucent film 140 is, for example, a silicon nitride layer, a silicon oxynitride layer, or a silicon nitride layer.

The in-layer lens 141 is composed of, for example, a silicon nitride layer, but may be composed of a silicon nitride layer having a higher nitrogen concentration than other silicon nitride layers contained in the translucent film 140. The layer constituting the intra-layer lens 141 can be referred to as an intra-layer lens layer. If the antireflection coating described above is composed of a compound containing silicon and nitrogen, for example, a silicon nitride layer, the antireflection coating may be part of the translucent film 140. As the antireflection coating described above, an antireflection film arranged on the translucent film 140 can be used.

The antireflection or insulating film on the translucent film 140 may be composed of a compound containing silicon and oxygen. In one example, the in-layer lens 141 may be composed of silicon nitride and the antireflection coating may be composed of silicon oxide. In another example, the in-layer lens 141 may be composed of silicon oxynitride and the antireflection coating may be composed of silicon oxide. In another example, the in-layer lens 141 may be constructed of silicon nitride and the antireflection coating may be constructed of silicon oxynitride. In one example, the insulating film 142 is made of silicon oxide, and in another example, the insulating film 142 is made of resin.

On the semiconductor layer 110 in the light receiving pixel region 101, a light shielding unit 143 arranged so as to surround an optical path of light incident on each of the plurality of first photoelectric conversion units 112a may be arranged. The light-shielding portion 143 may be made of a metal material, for example tungsten. The insulating film 142 is arranged on the translucent film (insulator) 140, and the light-shielding portion 143 can be arranged in the groove provided in the insulating film 142. A color filter layer 145 may be arranged on the insulating film 142, and a microlens 150 may be arranged on the color filter layer 145. The light-shielding unit 143 may be arranged in a grid pattern (for example, a rectangular grid pattern) so that light does not enter between adjacent pixels in the row direction and the column direction.

In the photoelectric conversion device 100, it is important to prevent the oblique light L'entered by the microlens 150 of the light receiving pixel region 101 from being incident on the second photoelectric conversion unit 112b of the light shielding pixel region 102. This is because when light is incident on the second photoelectric conversion unit 112b of the light-shielding pixel region 102, the optical black level cannot be detected correctly. Therefore, it is preferable that the upper end of the light-shielding portion 143 is higher than the upper surface of the light-shielding film 134 and the lower end of the light-shielding portion 143 is lower than the upper surface of the light-shielding film 134. Alternatively, it is preferable that the upper end of the light-shielding portion 143 is higher than the upper surface of the light-shielding film 134, and the lower end of the light-shielding portion 143 is lower than the upper surface of the light-shielding film 134 and higher than the lower surface of the light-shielding film 134.

The light-shielding portion 143 preferably has a continuous structure from the lower end of the light-shielding portion 143 to the upper end of the light-shielding portion 143. In other words, it is preferable that the light-shielding portion 143 does not include a portion made of a material that transmits light between the lower end of the light-shielding portion 143 and the upper end of the light-shielding portion 143. The light-shielding film 134 preferably has a continuous structure from the lower surface of the light-shielding film 134 to the upper surface of the light-shielding film 134. In other words, it is preferable that the light-shielding film 134 does not include a portion made of a material that transmits light between the lower surface of the light-shielding film 134 and the upper surface of the light-shielding film 134. The thickness of the light-shielding portion 143 is preferably larger than the thickness of the light-shielding film 134. In a cross section (cross-sectional view of FIG. 2) that is orthogonal to the main surface 111 of the semiconductor layer 110 and cuts a part of the plurality of first photoelectric conversion units 112a, the width of the light-shielding portion 143 in the direction parallel to the main surface 111 is 0. It is preferably 5.5 μm or less. This is advantageous for improving the pixel density.

The upper surface of the thinnest portion of the light-transmitting film 140 in the light-receiving pixel region 101 is preferably lower than the upper surface of the light-shielding film 134. This is advantageous for suppressing the incident light on the second photoelectric conversion unit 112b of the light-shielding pixel region 102. It is preferable that the uppermost end (apex) of the plurality of in-layer lenses 141 in the light receiving pixel region 101 is lower than the upper surface of the light shielding film 134. This is advantageous for lowering the height at which the microlens 150 is arranged and suppressing the incident light on the second photoelectric conversion unit 112b of the light-shielding pixel region 102. As will be described later, the thinnest portion of the translucent film 140 in the light receiving pixel region 101 may have a flat upper surface, and the lower end of the light shielding portion 143 may be lower than the flat upper surface. Such a configuration is also advantageous for suppressing the incident light on the second photoelectric conversion unit 112b of the light-shielding pixel region 102.

Hereinafter, the manufacturing method of the photoelectric conversion device 100 of the first embodiment will be described with reference to FIGS. 3, 4, 5, and 6. In step S101, semiconductor regions such as photoelectric conversion units 112a and 112b, semiconductor regions 113 and FD 114 are formed on the first conductive type semiconductor layer 110, and a gate electrode 115, a protective film 120 and an etch stop film are formed on the main surface 111. 122, the insulating film 121a and the like are formed. Specifically, in step S101, photoelectric conversion units 112a and 112b are formed in the semiconductor layer 110, and then a gate insulating film (not shown) and a gate electrode 115 are formed on the main surface 111 of the semiconductor layer 110. Will be done. Next, the semiconductor region 113 and the FD 114 are formed in the semiconductor layer 110. Next, a protective film 120 is formed on the main surface 111 of the semiconductor layer 110 so as to cover the gate electrode 115. In one example, the protective film 120 may be made of silicon nitride. In another example, the protective film 120 may be composed of a plurality of insulating layers including a silicon nitride film and a silicon oxide film. The protective film 120 may have a function of reducing damage given to the photoelectric conversion units 112a and 112b in a later step. The protective film 120 may have an antireflection function. Next, a part of the insulating film 121a that becomes a part of the insulating film 121 is formed on the protective film 120, and the etch stop film 122 is formed on the insulating film 121a so as to cover the photoelectric conversion portions 112a and 112b. The other part of the insulating film 121a may be formed on the surface. After that, the surface of the insulating film 121a can be flattened by a flattening process such as CMP. The etch stop film 122 may be composed of a silicon nitride film. The protective film 120 and the etch stop film 122 are optional components and may not be formed.

Next, in step S102, the first wiring layer 123, the second wiring layer 124, and the insulating film 121 are formed. For example, the insulating film 121b is formed on the insulating film 121a, and the region of the insulating film 121b to which the conductive member of the first wiring layer 123 should be arranged can be removed by etching. Next, a metal film for forming the conductive member of the first wiring layer 123 is formed so as to cover the entire area of the light receiving pixel region 101, the light shielding pixel region 102, and the peripheral circuit region 103, and the insulating film 121b is exposed. The metal film is removed by CMP or the like. As a result, the conductive member constituting the wiring pattern in the first wiring layer 123 is formed. A part of the conductive member of the first wiring layer 123 is electrically connected to a predetermined semiconductor region of the semiconductor layer 110 by a plug.

Next, the insulating film 121c and the insulating film 121d are formed on the insulating film 121b over the entire area of the light receiving pixel region 101, the light shielding pixel region 102, and the peripheral circuit region 103. Next, the region of the insulating film 121d to which the conductive member of the second wiring layer 124 should be arranged is removed by etching. Further, in the insulator 124c, a region to which a plug for electrically connecting the conductive member of the first wiring layer 123 and the conductive member of the second wiring layer 124 should be arranged is removed by etching. Next, a metal film used as a material for the second wiring layer and the plug is formed over the entire area of the light receiving pixel region 101, the light shielding pixel region 102, and the peripheral circuit region 103.

Then, the metal film is removed by CMP or the like until the insulating film 121d is exposed. By such a procedure, the conductive member of the second wiring layer 124 and the plug are formed. Here, after forming the insulating film 121c and the insulating film 121d, first, in the region where the plug for electrically connecting the conductive member of the first wiring layer 123 and the conductive member of the second wiring layer 124 should be arranged. The corresponding portion may be removed by etching.

Next, the insulating film 121e is formed over the entire area of the light receiving pixel region 101, the light shielding pixel region 102, and the peripheral circuit region 103, and the surface of the insulating film 121e can be flattened by CMP or the like, if necessary. The insulating film 121 is composed of the insulating films 121a, 121b, 121c, 121d, 121e. If necessary, the insulating film 121 may be provided with an etch stop film, a metal diffusion preventing film, or a film having both functions. Specifically, when the insulating film 121 is made of silicon oxide, the silicon nitride film or the carbon-containing silicon oxide film can be formed as an etch stop film and a metal diffusion prevention film. The first wiring layer 123 and the second wiring layer 124 may be formed by a method other than the damascene method.

In step S103, a plurality of openings 125 for forming the waveguide 130 are formed in the insulating film 121 in the light receiving pixel region 101 and the light shielding pixel region 102. The plurality of openings 125 can be formed by forming an etching mask by a photolithography step and etching the insulating film 121 through the openings of the etching mask. When the etch stop film 122 is formed, the insulating film 121 can be etched until the etch stop film 122 is exposed. It is preferable that the etching rate of the etch stop film 122 under the etching conditions for etching the insulating film 121 is smaller than the etching rate of the insulating film 121. When the insulating film 121 is a silicon oxide film, the etch stop film 122 may be a silicon nitride film or a silicon nitride film. Further, the insulating film 121 may be etched until the etch stop film 122 is exposed by a plurality of etchings under different conditions.

Next, in step S104, a plurality of waveguides 130 and connecting portions 131 are formed. Specifically, first, the plurality of openings 125 are filled with the material constituting the waveguide 130 and the connecting portion 131, and the waveguide forming material is deposited so that the upper surface of the insulating film 121 is covered with the material. It is The deposition can be carried out, for example, by a CVD method, a sputtering method, or application of an organic material typified by a polyimide-based polymer. Next, a plurality of waveguides 130 and connecting portions 131 may be formed by flattening by the etchback method or the CMP method. The waveguide forming material in the peripheral circuit region 103 can then be removed. In step S103, when the insulating film 121 is etched until the etch stop film 122 is exposed, the waveguide 130 is formed so as to be in contact with the etch stop film 122.

In the above example, the waveguide forming material on the insulating film 121 in the peripheral circuit region 103 is removed, but the waveguide forming material may not be removed. A plurality of waveguides 130 and connecting portions 131 may be formed by depositing the same material multiple times. Further, a plurality of waveguides 130 and a connecting portion 131 may be formed by sequentially depositing a plurality of materials different from each other. For example, a plurality of waveguides 130 and connecting portions 131 may be formed by first depositing a silicon nitride film and then depositing an organic material having high embedding performance.

The material of the waveguide 130 and the connecting portion 131 is preferably a material having a higher refractive index than that of the insulating film 121. When the insulating film 121 is a silicon oxide film, the material of the plurality of waveguides 130 and the connecting portion 131 is preferably silicon nitride. The silicon nitride film has a refractive index of about 2.0, and the surrounding silicon oxide film has a refractive index of about 1.4. Therefore, based on Snell's law, light entering the interface between the waveguide 130 and the insulating film 121 is reflected. As a result, light can be confined inside the waveguide 130.

Next, in step S105, the insulating film 132 is formed so as to cover the connecting portion 131 and the insulating film 121, in other words, over the entire area of the light receiving pixel region 101, the light shielding pixel region 102, and the peripheral circuit region 103. The upper surface of the insulating film 132 can be flattened by a flattening process such as CMP, if necessary. Flattening the surface of the insulating film 132 is advantageous for improving the processing accuracy of the third wiring layer 133 and the light-shielding film 134 that are formed later.

Next, in step S106, the third wiring layer 133 and the light-shielding film 134 are formed. Specifically, in step S106, a metal film is formed on the insulating film 132, an etching mask is formed on the metal film by a photolithography step, and the metal film is etched through the opening of the etching mask. Can be formed by The third wiring layer 133 and the light-shielding film 134 may be made of, for example, aluminum. The third wiring layer 133 may be electrically connected to the second wiring layer 124 by a plug (not shown).

Next, in step S107, a translucent film 140 including a plurality of in-layer lenses 141 is formed. First, a material film constituting the translucent film 140 is formed so as to cover the insulating film 132, the light-shielding film 134, and the third wiring layer 133. The material film (ie, the translucent film 140) may be composed of a silicon oxide film or silicon oxynitride. In other words, the material film (ie, the translucent film 140) may be composed of a compound containing silicon and nitrogen. An antireflection film composed of a silicon oxide film, a silicon nitride film, or the like may be arranged on the in-layer lens 141. The antireflection coating may be composed of a compound containing silicon and oxygen. Next, an etch mask pattern is formed on the material film, and the etch mask pattern can be processed if necessary. For example, by heating the etching mask pattern, a curved surface to be transferred to the underlying material film can be formed. Then, by partially etching the material film through the etching mask, the curved surface is transferred to the material film, whereby a plurality of in-layer lenses 141 can be formed. The upper surface of the in-layer lens 141 has an upwardly convex shape, and the in-layer lens 141 may be configured to match the position of the corresponding waveguide 130. It is preferable that the uppermost end of the plurality of in-layer lenses 141 in the light receiving pixel region 101 is lower than the upper end of the light shielding film 134.

Next, in step S108, the insulating film 142 and the light-shielding portion 143 are formed on the translucent film 140 or the antireflection film. First, the insulating film 142 is formed on the translucent film 140 or the antireflection film, and the upper surface of the insulating film 142 can be flattened by a flattening process such as CMP. The insulating film 142 may be composed of, for example, silicon oxide. The insulating film 142 may be made of, for example, silicon oxide. Next, an etching mask is formed on the insulating film 142 by a photolithography step, the insulating film 142 is etched through the opening of the etching mask, and a groove may be formed in the region of the insulating film 142 where the light-shielding portion 143 should be formed. .. Next, the light-shielding material or the metal material is filled in the groove formed in the insulating film 142, and then the light-shielding material is removed so that the upper surface of the insulating film 142 is exposed by a flattening process such as CMP. As a result, the light-shielding portion 143 is formed. The light-shielding portion 143 may be made of, for example, tungsten.

In a cross section (cross-sectional view of FIG. 5) that is orthogonal to the main surface 111 of the semiconductor layer 110 and cuts a part of the plurality of first photoelectric conversion units 112a, the width of the light-shielding portion 143 in the direction parallel to the main surface 111 is 0. It is preferably 5.5 μm or less. This is advantageous for improving the pixel density. If the light-shielding film 134 arranged so as to cover the plurality of photoelectric conversion units 112b of the light-shielding pixel region 102 is thickened, it becomes difficult to flatten the insulating film 142 on the light-shielding film 134. On the other hand, since the light-shielding portion 143 is formed by forming a groove in the insulating film 142 and filling the groove with a metal material, it is easy to form the light-shielding portion 143 thickly. By making the light-shielding portion 143 thicker than the light-shielding film 134, it is possible to prevent light incident on the light-receiving pixel region 101 from an oblique direction from being incident on the photoelectric conversion unit 112b of the light-shielding pixel region 102.

Next, in step S109, the color filter layer 145 is formed on the insulating film 142, and then the microlens 150 is formed on the color filter layer 145.

Hereinafter, the configuration of the photoelectric conversion device 100 according to the second embodiment of the present invention will be described with reference to FIG. 7. Matters not mentioned as the second embodiment may follow the first embodiment. The photoelectric conversion device 100 of the second embodiment is configured as a back-illuminated CMOS sensor. Light is incident on the plurality of photoelectric conversion units 204a via a structure (for example, a microlens 242) arranged on the main surface 201 of the semiconductor layer 200.

The photoelectric conversion device 100 has a light receiving pixel region 202 and a light shielding pixel region 203. A wiring structure 250 including a gate electrode and a wiring layer is arranged under the first surface S1 of the two surfaces of the semiconductor layer 200, that is, the first surface S1 and the second surface S2. An antireflection film 210 may be arranged on the second surface S2 of the semiconductor layer 200. The antireflection film 210 may be composed of, for example, aluminum oxide, hafnium oxide or tantalum oxide. An insulating film 211 may be provided on the antireflection film 210. The insulating film 211 may be made of, for example, silicon oxide. In addition, in this specification, the expressions "upper" and "lower" are relative expressions, and therefore, "upper" and "lower" can be interchanged and read.

A plurality of second photoelectric conversion units 204b are arranged in the light-shielding pixel region 203. A light-shielding film 220 may be arranged in the light-shielding pixel region 203. The light-shielding film 220 may be made of a metal material such as aluminum or tungsten. The closer the distance between the light-shielding film 220 and the second surface S2 of the semiconductor layer 200 is, the more light can be suppressed from being incident on the photoelectric conversion unit 204b of the light-shielding pixel region 203. It is desirable that the distance from the surface S2 is short.

A translucent film (insulator) 222 may be arranged on the insulating film 211. The translucent film 222 may be arranged so as to cover the insulating film 211 and the light-shielding film 220. The translucent film 222 may include a plurality of intra-layer lenses 221 arranged in optical paths of light incident on the plurality of first photoelectric conversion units 204a of the light receiving pixel region 202. The translucent film 222 may be arranged so as to cover the light-shielding film 220 in the light-shielding pixel region 203.

An antireflection film or an insulating film may be arranged so as to cover the in-layer lens 221 while being in contact with the in-layer lens 221 on at least the in-layer lens 221 in the translucent film 222. The translucent film 222 may be composed of a compound containing silicon and nitrogen, and the antireflection film or the insulating film may be composed of a compound containing silicon and oxygen. In one example, the translucent film 222 may be made of silicon nitride and the antireflection or insulating film may be made of silicon oxide. In another example, the translucent film 222 may be made of silicon oxynitride and the antireflection or insulating film may be made of silicon oxide.

On the semiconductor layer 200 in the light receiving pixel region 202, a light shielding unit 231 arranged so as to surround an optical path of light incident on each of the plurality of first photoelectric conversion units 204a may be arranged. The light-shielding portion 231 may be made of a metal material such as tungsten. The insulating film 230 is arranged on the translucent film (insulator) 221 and the light-shielding portion 231 can be arranged in the groove provided in the insulating film 230. A color filter layer 241 may be arranged on the insulating film 230, and a microlens 242 may be arranged on the color filter layer 241. The light-shielding unit 231 may be arranged in a grid pattern (for example, a rectangular grid pattern) so that light does not enter between adjacent pixels in the row direction and the column direction.

It is preferable that the upper end of the light-shielding portion 231 is higher than the upper surface of the light-shielding film 220 and the lower end of the light-shielding portion 231 is lower than the upper surface of the light-shielding film 220. Alternatively, it is preferable that the upper end of the light-shielding portion 231 is higher than the upper surface of the light-shielding film 220, and the lower end of the light-shielding portion 231 is lower than the upper surface of the light-shielding film 220 and higher than the lower surface of the light-shielding film 220.

The light-shielding portion 231 preferably has a continuous structure from the lower end of the light-shielding portion 231 to the upper end of the light-shielding portion 231. In other words, it is preferable that the light-shielding portion 231 does not include a portion made of a material that transmits light between the lower end of the light-shielding portion 231 and the upper end of the light-shielding portion 231. The light-shielding film 220 preferably has a continuous structure from the lower surface of the light-shielding film 220 to the upper surface of the light-shielding film 220. In other words, it is preferable that the light-shielding film 220 does not include a portion made of a material that transmits light between the lower surface of the light-shielding film 220 and the upper surface of the light-shielding film 220. The thickness of the light-shielding portion 231 is preferably larger than the thickness of the light-shielding film 220. In a cross section (cross-sectional view of FIG. 7) that is orthogonal to the second surface S2 of the semiconductor layer 200 and cuts a part of the plurality of first photoelectric conversion units 204a, the width of the light-shielding portion 231 in the direction parallel to the main surface 201 is set. It is preferably 0.5 μm or less. This is advantageous for improving the pixel density.

The upper surface of the thinnest portion of the light-transmitting film 222 in the light-receiving pixel region 202 is preferably lower than the upper surface of the light-shielding film 220. This is advantageous for suppressing the incident light on the second photoelectric conversion unit 204b of the light-shielding pixel region 203. It is preferable that the uppermost end of the plurality of in-layer lenses 221 in the light receiving pixel region 202 is lower than the upper surface of the light shielding film 220. This is advantageous for lowering the height at which the microlens 242 is arranged and suppressing the incident light on the second photoelectric conversion unit 204bb of the light-shielding pixel region 203. As will be described later, the thinnest portion of the translucent film 222 in the light receiving pixel region 202 may have a flat upper surface, and the lower end of the light shielding portion 231 may be lower than the flat upper surface. Such a configuration is also advantageous for suppressing the incident light on the second photoelectric conversion unit 204b of the light-shielding pixel region 203.

FIG. 8A is a plan view showing a configuration example of the light-shielding portions 143 and 231 of the photoelectric conversion devices 100 of the first and second embodiments. The plan view shows the structure on the main surface 111 of the semiconductor layer 110 and the surface parallel to the second surface S2 of the semiconductor layer 200. As illustrated in FIG. 8A, the light-shielding portions 143 and 231 of the photoelectric conversion devices 100 of the first and second embodiments can be arranged in a grid pattern (for example, a rectangular grid pattern).

FIG. 8B is a plan view showing another configuration example of the light-shielding portions 143 and 231 of the photoelectric conversion device 100 of the first and second embodiments. The plan view shows the structure on the main surface 111 of the semiconductor layer 110 and the surface parallel to the second surface S2 of the semiconductor layer 200. As illustrated in FIG. 8B, the light-shielding portions 143 and 231 of the photoelectric conversion devices 100 of the first and second embodiments may have a plurality of portions electrically isolated from each other. Further, as illustrated in FIG. 8B, each of the optical paths of light incident on the plurality of first photoelectric conversion units may be surrounded by four of the plurality of portions.

FIG. 9 illustrates a configuration in which a fixed potential is applied to the light-shielding portions 143 and 231 and the light-shielding films 134 and 220 of the photoelectric conversion devices 100 of the first and second embodiments. Note that FIG. 9 shows only the reference numerals according to the first embodiment for the sake of simplification of the description. Hereinafter, the reference numerals according to the first embodiment will be used, but the description thereof may be applied to the second embodiment as well.

For example, the light-shielding portion 143 may be electrically connected to the light-shielding film 134 through the opening OP provided in the light-transmitting film 140 in the light-shielding pixel region 102. The light-shielding film 134 may be electrically connected to, for example, the conductive pattern 190, and a fixed potential (for example, a power supply potential, a ground potential) may be given via the conductive pattern 190. As a result, a fixed potential can be applied to the light-shielding portion 143 and the light-shielding film 134. In one example, the light-shielding film 134 is arranged in the fourth wiring layer and may be electrically connected to the conductive pattern 190 arranged in the third wiring layer via a plug. However, the light-shielding film 134 and the conductive pattern may be arranged on another wiring layer. If the potentials of the light-shielding portion 143 and the light-shielding film 134 are indefinite, the signals read from the photoelectric conversion units 112a and 112b may fluctuate under the influence of the potential. Therefore, it is preferable to fix the potentials of the light-shielding portions 143 and 231 and the light-shielding film 134. By applying a fixed potential to the light-shielding portion 143 and the light-shielding film 134, the resistance of the voltage is lowered and noise such as magnetic noise can be reduced, which is advantageous.

FIG. 10 illustrates the configurations of the light-shielding portions 143 and 231 of the photoelectric conversion devices 100 of the first and second embodiments. Note that FIG. 10 shows only the reference numerals according to the first embodiment for the sake of simplification of the description. Hereinafter, the reference numerals according to the first embodiment will be used, but the description thereof may be applied to the second embodiment as well.

As illustrated in FIG. 10, the light-shielding portions 143 of the photoelectric conversion devices 100 of the first and second embodiments have a plurality of portions 143-1, 143-2, 143-3, which are electrically isolated from each other.・ Can have. Further, each of the plurality of portions 143-1, 143-2, 143-3, ... Corresponds to one column and is continuous without being divided. Here, the column direction in FIG. 10 is the direction in which the column signal line from which the signal of the photoelectric conversion unit of each column is output extends, and the row direction is the direction orthogonal to the column direction (driven by the row selection circuit). The direction in which the signal line extends).

Such a configuration is advantageous for reducing lateral smear. To illustrate this, consider the case where the plurality of portions 143-1, 143-2, 143-3 have a lattice structure electrically connected to each other and the potential is not fixed. In this case, if the potential of the FD in a certain row in a certain row fluctuates greatly, the potential of the light-shielding portion fluctuates due to the influence, and the fluctuation of the potential of the light-shielding portion fluctuates the potential of the FD in another column in the same row. I can let you. This can cause lateral smear. As described above, when the light-shielding portion 143 is divided into a plurality of portions 143-1, 143-2, and 143-3 corresponding to individual columns, the FD of the same row transmitted via the light-shielding portion. Mutual influence between (pixels) can be reduced.

Hereinafter, the photoelectric conversion device 100 according to the third embodiment of the present invention will be described with reference to FIG. Matters not mentioned as the third embodiment may follow the first or second embodiment. Further, the positional relationship between the light-shielding portion described in the third embodiment and the antireflection film or the insulating film arranged under the light-shielding portion can be provided in the first or second embodiment.

The photoelectric conversion device 100 may include a semiconductor layer 301 having a plurality of photoelectric conversion units 302 arranged in a light receiving pixel region, and a wiring layer 303 and an insulating film 304 arranged on the main surface PS of the semiconductor layer 301. .. The wiring layer 303 is arranged in the insulating film 304. The photoelectric conversion device 100 further surrounds the insulator 310 arranged on the insulating film 304, the insulating film 306 arranged on the insulating film 310, and the optical path LP of the light incident on the photoelectric conversion unit 302. It may be provided with a light-shielding portion 320 arranged in the light-shielding unit 320. The insulator 310 may be a translucent film including the intra-layer lens 311 arranged in the optical path LP. Alternatively, the insulator 310 may be entirely flat or may have irregularities due to the pattern of the base. The insulator 310 is compatible with the translucent films 140 and 222 in the first and second embodiments.

The insulator 310 may include a flat portion 312 having a flat top surface 313. The lower end 321 of the light-shielding portion 320 is lower than the flat upper surface 313, and the side surface of the lower portion 322 of the light-shielding portion 320 may be surrounded by the flat portion 312. When the insulator 310 includes a plurality of intra-layer lenses 311 the flat portion 312 may be arranged between the plurality of intra-layer lenses 311. In one example, the width of the lower end of the light-shielding portion 320 is smaller than the width of the upper end of the light-shielding portion 320. Such a structure can be realized, for example, by forming a groove in the insulating film 306 by etching and filling the groove with a light-shielding material to form a light-shielding portion 320.

Hereinafter, the photoelectric conversion device 100 according to the fourth embodiment of the present invention will be described with reference to FIGS. 12, 13, 14, 15, 16, and 17. Matters not mentioned as the fourth embodiment may follow any or a combination of the first to third embodiments. Further, the positional relationship between the light-shielding portion described in the fourth embodiment and the antireflection film or the insulating film arranged under the light-shielding portion can be applied to the first or second embodiment.

FIG. 12 is a plan view showing the configuration of a part of the photoelectric conversion device 100 of the fourth embodiment, and shows a part corresponding to a part (4 pixels) arranged in the light receiving pixel region 101 of FIG. FIG. 13 is a cross-sectional view of the photoelectric conversion device 100 on the CC line of FIG. The photoelectric conversion device 100 has a light receiving pixel region having a plurality of light receiving pixels. Although not shown in FIG. 13, the photoelectric conversion device 100 of the fourth embodiment may include a light-shielding pixel region and a peripheral circuit region similar to the photoelectric conversion device 100 of the first to third embodiments. Each light-receiving pixel arranged in the light-receiving pixel region includes a photoelectric conversion unit to which light is incident, and each light-shielding pixel arranged in the light-shielding pixel region includes a light-shielded photoelectric conversion unit.

The photoelectric conversion device 100 includes a semiconductor layer 401 having a plurality of photoelectric conversion units 402 arranged in a light receiving pixel region, and wiring layers 403, 404, 405 and an insulating film 406 arranged on the main surface PS of the semiconductor layer 401. Can be equipped with. The wiring layers 403, 404, and 405 are arranged in the insulating film 406. The photoelectric conversion device 100 further includes an antireflection film 407 having a higher refractive index than the insulating film 406, and a translucent film 410 arranged so as to be in contact with the upper surface of the antireflection film 407 and having a higher refractive index than the antireflection film 407. Can be equipped. The photoelectric conversion device 100 may further include an antireflection film 409 that is arranged so as to be in contact with the upper surface of the translucent film 410 and has a lower refractive index than the translucent film 410. The laminated film composed of the antireflection film 407, the translucent film 410 and the antireflection film 409 can function as a passivation film. Instead of providing the translucent film 410, a flat film or a film having irregularities due to the underlying pattern may be provided. The translucent film 410 is compatible with the translucent films 140, 222, and the insulator 310 in the first, second, and third embodiments.

On the semiconductor layer 401, a light-shielding unit 420 arranged so as to surround an optical path of light incident on each of the plurality of photoelectric conversion units 402 may be arranged. The light-shielding portion 420 may be made of a metal material, for example tungsten. An insulating film 430 may be arranged on the translucent film (insulator) 410. The upper surface of the insulating film 430 can be flattened. The light-shielding portion 420 may be arranged in the groove provided in the insulating film 430. A color filter layer 431 may be arranged on the insulating film 430, and a microlens 432 may be arranged on the color filter layer 431. The light-shielding unit 420 may be arranged in a grid pattern (for example, a rectangular grid pattern) so that light does not enter between adjacent pixels in the row direction and the column direction. The light-shielding unit 420 is compatible with the light-shielding unit 143 and the light-shielding unit 320 in the first and second embodiments.

The translucent film (insulator) 410 may include a flat portion 412 having a flat top surface 413. The lower end 421 of the light-shielding portion 420 is lower than the flat upper surface 413, and the side surface of the lower portion 422 of the light-shielding portion 420 may be surrounded by the flat portion 412. The flat portion 412 may be arranged between the plurality of intra-layer lenses 411. In one example, the width of the lower end of the light-shielding portion 420 is smaller than the width of the upper end of the light-shielding portion 420. Such a structure can be realized, for example, by forming a groove in the insulating film 430 by etching and filling the groove with a light-shielding material to form a light-shielding portion 420. The light-shielding portion 420 may be arranged so as to penetrate the antireflection film (insulating film) 408 that covers the light-transmitting film 410 while being in contact with the light-transmitting film (insulator) 410.

By lowering the lower end 421 of the light-shielding portion 420 to be lower than the flat upper surface 413, it is possible to reduce the leakage of light incident on the pixel to the outside of the pixel. This can reduce the light incident on the light receiving pixel region from being incident on the photoelectric conversion portion of the light shielding pixel region, and can also reduce the intrusion of light from the pixel to the pixel.

In order for the light-transmitting film 140 to have a passivation function for suppressing the intrusion of moisture or the like from the outside, the thickness t5 of the light-transmitting film 140 between the lower end 421 of the light-shielding portion 420 and the upper surface of the antireflection film 407. (See FIG. 27) is preferably 100 nm or more. When the thickness t5 is thin, hydrogen atoms can pass through the translucent film 140 between the lower end 421 of the light-shielding portion 420 and the upper surface of the antireflection film 407, and hydrogen atoms can be lost. Loss of hydrogen atoms can reduce the sintering effect and increase dark current. From the viewpoint of suppressing the transmission of hydrogen atoms, the thickness t5 of the translucent film 140 between the lower end 421 of the light-shielding portion 420 and the upper surface of the antireflection film 407 is preferably 200 nm or more, preferably 300 nm or more. Is more preferable. On the other hand, if the thickness t5 is too thick, the possibility of light leaking between adjacent pixels increases, which may increase the possibility of color mixing. Therefore, from the viewpoint of suppressing light leakage (color mixing), the thickness t5 is preferably 800 nm or less, more preferably 500 nm or less, and further preferably 400 nm or less. From the above, the thickness t5 is preferably 100 nm <t5 <400 nm.

Hereinafter, a method for manufacturing the photoelectric conversion device 100 according to the fourth embodiment of the present invention will be described with reference to FIGS. 13 to 17. In step S201, a plurality of photoelectric conversion units 402 may be formed in the light receiving pixel region of the semiconductor layer 401. At this time, a plurality of photoelectric conversion units may be formed in the light-shielding pixel region as well. Further, although not shown, a transistor such as a floating diffusion (charge-voltage conversion unit) and a transfer transistor that transfers the charge of the photoelectric conversion unit to the floating diffusion can be formed in the semiconductor layer 401. The electrical separation between elements such as transistors can be configured, for example, by a second conductive semiconductor region and / or an insulator (eg, STI (Shallow Trench Isolation)). An insulating film 406 and wiring layers 403, 404, and 405 can be formed on the semiconductor layer 501 having a plurality of photoelectric conversion units 402. The wiring layers 403, 404, 405 may be made of a metallic material, such as copper or aluminum. The portion of the insulating film 406 that covers the uppermost wiring layer 505 can be flattened by a flattening process such as CMP.

An antireflection film (insulating film) 407 may be formed on the upper surface of the insulating film 406 so as to be in contact with the upper surface. Further, the translucent film 410 may be formed so as to be in contact with the antireflection film 407. The translucent film 410 can be formed by depositing a high refractive index material and processing the high refractive index material by photolithography and dry etching. Specifically, a photoresist film having a lens-shaped surface is formed on a high-refractive-index material, and the high-refractive-index material is etched through the photoresist film to form a lens-shaped surface of the photoresist film. Is transferred to a high refractive index material. Thereby, the translucent film 410 having the in-layer lens 411 can be formed.

Next, an antireflection film (insulating film) 408 may be formed on the light-transmitting film 410 so as to come into contact with the light-transmitting film 410. The translucent film 410 may be composed of a compound containing silicon and nitrogen, and the antireflection film 408 may be composed of a compound containing silicon and oxygen. In one example, the translucent film 410 may be made of silicon nitride and the antireflection film 408 may be made of silicon oxide. In another example, the translucent film 410 may be made of silicon oxynitride and the antireflection film 408 may be made of silicon oxide. Then, an insulating film 430 may be formed so as to cover the antireflection film 408.

Next, in step S202, the BARC film 450 and the photoresist film 451 are sequentially formed on the antireflection film 408, and a bottomed opening is formed in the translucent film 410 through the insulating film 430 and the antireflection film 408. Grooves 452 can be formed as such. Here, after the photoresist film 513 is patterned by a photolithography step, a two-step dry etching process can be performed through the openings in the photoresist film 513. In the first stage dry etching, the BARC film 450 may be etched, and in the second stage dry etching, the insulating film 430, the antireflection film 408, and a part of the translucent film 410 may be etched.

The first stage dry etching is, for example, a recipe in which the etching time is fixed, and only the BARC film 450 can be etched. In the second stage dry etching, for example, the etching conditions are such that the etching rate of silicon oxide is 400 to 600 nm / min, the etching rate of silicon oxynitride is 150 to 350 nm / min, and the etching rate of silicon nitride is 50 to 250 nm / min. It is possible.

Next, in step S203, the groove 452 formed by dry etching is filled with a metal such as tungsten, whereby the light-shielding portion 420 is formed. After the upper portion of the light-shielding portion 420 is flattened by a flattening process such as CMP, a film made of the same material as the insulating film 430 may be formed as a cap film on the edge film 430 and the light-shielding portion 420. Next, as shown in FIG. 13, a color filter layer 431 is formed on the cap film, and a microlens 432 is further formed on the color filter layer 431.

FIG. 17 is a cross-sectional view of the photoelectric conversion device 100 on the DD line of FIG. In this example, since the light-shielding portion 420 has a rectangular grid-like structure, the distance between the in-layer lens 411 and the light-shielding portion 420 is large in the diagonal direction (corner portion) of each grid element. Therefore, as indicated by the dotted arrow, the light incident on the pixel may leak out of the pixel.

18 and 19 show an improved example for reducing light leakage as shown in FIG. FIG. 18 is a plan view showing the configuration of a part of the photoelectric conversion device 100 according to the fifth embodiment of the present invention, and shows a part corresponding to a part (4 pixels) arranged in the light receiving pixel region 101 of FIG. There is. FIG. 19 is a cross-sectional view of the photoelectric conversion device 100 on the EE line of FIG. Matters not mentioned as the fifth embodiment may follow the fourth embodiment. In the fifth embodiment, the light-shielding portion 420 has an opening (for example, a circle) along the outer shape (for example, a circle) of the in-layer lens 411, and the distance between the in-layer lens 411 and the light-shielding portion 420 is constant. It has become. Such a structure is advantageous for reducing the possibility that light incident on a pixel leaks out of the pixel. This can reduce the light incident on the light receiving pixel region from being incident on the photoelectric conversion portion of the light shielding pixel region, and can also reduce the intrusion of light from the pixel to the pixel.

FIG. 20 is a cross-sectional view showing the configuration of a part of the photoelectric conversion device 100 according to the sixth embodiment of the present invention. The sixth embodiment provides a modification of the fourth or fifth embodiment. The photoelectric conversion device 100 of the sixth embodiment includes a waveguide 480 between the photoelectric conversion unit 402 and the in-layer lens 411.

Hereinafter, the configuration of the photoelectric conversion device 100 according to the seventh embodiment of the present invention will be described with reference to FIG. 22. Matters not mentioned as the seventh embodiment may follow any or a combination of the first to sixth embodiments. FIG. 22 is a cross-sectional view showing the configuration of a part of the photoelectric conversion device 100 according to the seventh embodiment of the present invention. The translucent film 140, which is a silicon compound film composed of a compound containing silicon and nitrogen, has an extending portion 146 extending from the light receiving pixel region 101 to the light blocking pixel region 102 and / or the peripheral circuit region 103. The light-shielding pixel area 102 and / or the peripheral circuit area 103 located outside the light-receiving pixel area 101 can be collectively referred to as a non-light-receiving pixel area. The extending portion 146 covers the light-shielding film 134 and the third wiring layer 133. In the seventh embodiment, the light transmissive extending to the light-shielding pixel region 102 and / or the peripheral circuit region 103 of the translucent film 140 rather than the thickness t1 of the portion of the translucent film 140 located in the light-receiving pixel region 101. The thickness t2 of the extending portion 146 of the film 140 is thick. In other words, in the light receiving pixel region 101, the translucent film 140 is a region (non-light receiving pixel region, light shielding pixel region 102 and / or peripheral circuit region) outside the light receiving pixel region 101 from the light receiving pixel region 101 of the translucent film 140. It has a thinner portion than the extending portion 146 extending to 103). The portion of the translucent film 140 showing a thickness t1 smaller than the thickness t2 in the light receiving pixel region 101 may be a flat portion of the translucent film 140 located between a plurality of in-layer lenses 141, and may be a light-shielding portion. It may be a portion located between the portion 143 and the semiconductor layer 111. When the flat portion located between the plurality of in-layer lenses 141 is thicker than the portion located between the light-shielding portion 143 and the semiconductor layer 111 as in the third embodiment, the thickness t2 of the extending portion 146 is set. , It can be thicker than the portion located between the light-shielding portion 143 and the semiconductor layer 111. In this case, the thickness t2 of the extending portion 146 is preferably thicker than that of the flat portion. The light-shielding film 134 of the light-shielding pixel region 102 may be made of a material containing aluminum as a main component. In addition to aluminum, an aluminum alloy containing a smaller amount of copper than aluminum can be used for the light-shielding film 134. Since aluminum has the property of occluding hydrogen and releasing hydrogen when it receives heat, the element in the light-shielding pixel region 102 and the peripheral circuit region 103 having the light-shielding film 134 and the third wiring layer 133 is more than the light-receiving pixel region 101. The escape of hydrogen to the outside can increase. Further, hydrogen can be largely detached to the outside of the element from the gap between the light-shielding film 134 and the third wiring layer 133 and the gap between the plurality of wiring patterns of the third wiring layer 133. On the other hand, the nitrogen-containing silicon compound constituting the translucent film 140 has a property of limiting the permeation of hydrogen supplied from the insulating film 121 or the like arranged between the wiring layers. Utilizing this property, by arranging a thick extending portion 146 in the light-shielding pixel area 102 and the peripheral circuit area 103 arranged around the light-receiving pixel area 101, the element outside the light-shielding pixel area 102 and the peripheral circuit area 103. It is possible to suppress the desorption of hydrogen toward the direction. The thick extending portion 146 is preferably located on the light-shielding film 134 and / or the third wiring layer 133, a gap between the light-shielding film 134 and the third wiring layer 133, and a plurality of the third wiring layer 133. It is also preferable to be located in the gap between the wiring patterns of. As a result, it is possible to suppress an increase in dark current in the peripheral region of the light receiving pixel region 101, which is close to the light shielding pixel region 102. Further, since the volume of the translucent film per area is small in the light-shielding pixel region 102 and the peripheral circuit area 103 in which the in-layer lens 141 is not formed, the extending portion 146 is formed even in a place where the light-shielding film 134 and the third wiring layer 133 are not formed. Thick is preferable. Further, the thicker the translucent film 140, the more the desorption of hydrogen to the outside can be suppressed. Therefore, it is desirable to keep the thickness uniform, and there is a step from the viewpoint of processing the structure above the in-layer lens. It is desirable not to. Further, even in a place where the light-shielding film 134 and the third wiring layer 133 of the light-shielding pixel region 102 and the peripheral circuit region 103 do not exist, light transmission having a thickness equal to or larger than t2 from the viewpoint of suppressing external desorption of hydrogen. It is desirable to form a film.

The thickness t2 of the extending portion 146 should be thick from the viewpoint of suppressing the desorption of hydrogen to the outside of the device, and is preferably 300 nm or more. The thickness t1 of the translucent film 140 is preferably 0.1 to 0.5 um, and the thickness t2 of the extending portion 146 is preferably 0.5 to 2.5 um, preferably 0.5 to 1.5 um. Is even more preferable. From another viewpoint, the thickness t2 of the extending portion 146 is preferably larger than the thickness t1 of the translucent film 140, and is preferably 5 times or more the thickness t1 of the translucent film 140, for example.

Further, the thickness t3 of the in-layer lens 141 (the thickness of the portion including the apex of the in-layer lens 141) may be the same as or smaller than the thickness t2, but is thicker than the thickness t1. Is preferable. It is preferable that the difference between t3 and t2 is smaller than the difference between t1 and t2 (that is, | t3-t2 | << | t3-t1 |). By making the thickness t3 larger than the thickness t2, the power (condensing power) of the intralayer lens 141 can be increased. The in-layer lens 141 can be formed, for example, through patterning of a resist, formation of a curved surface by reflow of the resist, and processing by etchback of a lens material film using the reflowed resist. During etchback, the reflowed resist is removed. By leaving the resist used for forming the in-layer lens 141 in the light-shielding pixel region 102 and the peripheral circuit region 103, the etching amount of the lens material film is reduced during etching back, and the thickness is sufficient for the light-shielding pixel region and the peripheral circuit region. An extension 146 having a t2 can be left.

Since the resist pattern for forming the in-layer lens 141 has a curved surface due to reflow, the thickness of the central portion becomes large, whereas the resist pattern of the light-shielding pixel region 102 and the peripheral circuit region 103 is a solid film. The change in film thickness due to reflow is small. As a result, the resist pattern of the light-shielding pixel region 102 and the peripheral circuit region 103 becomes thinner than the resist pattern for forming the in-layer lens 141. When the resist having such a thickness relationship is etched back, the etching amount of the lens material film becomes larger in the light-shielding pixel region 102 and the peripheral circuit region 103 than in the light-receiving pixel region 101. As a result, t2 can be slightly smaller than t3.

Hereinafter, the configuration of the photoelectric conversion device 100 according to the eighth embodiment of the present invention will be described with reference to FIG. 23. Matters not mentioned as the eighth embodiment may follow any or combination of the first to seventh embodiments, in particular the second embodiment. FIG. 23 is a cross-sectional view showing the configuration of a part of the photoelectric conversion device 100 according to the eighth embodiment of the present invention. The translucent film 222, which is a silicon compound film composed of a compound containing silicon and nitrogen, has an extending portion 512 extending from a light receiving pixel region 202 to a light shielding pixel region 203 and / or a peripheral circuit region (not shown). .. The extending portion 512 covers the light-shielding film 134 and the wiring layer (not shown) in the peripheral circuit region. The eighth embodiment is the configuration of the seventh embodiment, that is, the extending portion 146 of the translucent film 140 of the light-shielding pixel region 102 and the peripheral circuit region 103 rather than the thickness t1 of the translucent film 140 of the light-receiving pixel region 101. The configuration having a thick thickness t2 is applied to the photoelectric conversion device 100 of the second embodiment. In the photoelectric conversion device 100 of the eighth embodiment, as shown in FIG. 23, the light-shielding pixel region 203 and the peripheral circuit region (not shown) have a light-transmitting film rather than the thickness t1 of the light-transmitting pixel region 202. The thickness t2 of the extending portion 512 of 222 is thick.

The photoelectric conversion device 100 of the eighth embodiment is manufactured by changing the mask pattern from the second embodiment so that the resist remains in the light-shielding pixel region and the peripheral circuit region when the in-layer lens 211 is formed in the step S107. Can be done.

Hereinafter, the configuration of the photoelectric conversion device 100 according to the ninth embodiment of the present invention will be described with reference to FIGS. 24, 25, and 26. Matters not mentioned as the ninth embodiment may follow any or a combination of the first to eighth embodiments. FIG. 24 is a cross-sectional view showing a configuration of a part of the photoelectric conversion device 100 according to the ninth embodiment of the present invention (cross-sectional view taken along the line EE of FIGS. 25 and 26). 25 is an example of a cross section taken along line ZZ of FIG. 24, and FIG. 26 is another example of a cross section taken along line ZZ of FIG. 24.

The translucent film 410, which is a silicon compound film composed of a compound containing silicon and nitrogen, may include a flat portion 412 having a flat top surface 413. The flat portion 412 has a thickness of t5. The lower end 421 of the light-shielding portion 420 is lower than the upper surface 413 of the flat portion 412, and the side surface of the lower portion 422 of the light-shielding portion 420 may be surrounded by the flat portion 412. The flat portion 412 may be arranged between the plurality of intra-layer lenses 411. In one example, the width of the lower end of the light-shielding portion 420 is smaller than the width of the upper end of the light-shielding portion 420. Such a structure can be realized, for example, by forming a groove in the insulating film 430 by etching and filling the groove with a light-shielding material to form a light-shielding portion 420. The light-shielding portion 420 may be arranged so as to penetrate the antireflection film 408 that covers the light-transmitting film 410 while being in contact with the light-transmitting film (insulator) 410.

A recess 415 is arranged between the flat portion 412 and the in-layer lens 411. The thickness of the in-layer lens 411 (thickness of the portion including the apex of the in-layer lens 411) is t3. The thickness of the recess 415 is t1. The lower end 421 of the light-shielding portion 420 is lower than the upper surface 413 of the flat portion 412, and the side surface of the lower portion 422 of the light-shielding portion 420 may be surrounded by the flat portion 412. In other words, the lower end 421 of the light-shielding portion 420 is arranged so as to pierce the flat portion 412. The translucent film 410 has a thickness t4 between the lower end 421 of the light-shielding portion 420 and the antireflection film 407. It is preferable that t1, t3, t4 and t5 satisfy t1 <t4 <t5 <t3.

From the viewpoint of improving the light-shielding property, if the thickness t4 of the translucent film 410 between the lower end 421 of the light-shielding portion 420 and the antireflection film 407 is reduced, the outward desorption of hydrogen to the outside of the element can be induced. Further, the desorption of hydrogen can be suppressed by setting t1 = t4 and thickening the entire translucent film 410, but the light incident on the translucent film 410 travels through the translucent film 140 and leaks to the adjacent pixels, and the color is mixed. To increase. Further, since the thickness of the translucent film 140 on the optical path is increased, the optical path length is increased and the light efficiency is lowered. In order to avoid this, it is preferable to increase only the thickness of the flat portion 412 arranged between the in-layer lens 411 and the in-layer lens 411. The flat portion 412 does not have to be provided for all the in-layer lenses 411, and even if the flat portion 412 is arranged only in the outer peripheral portion of the region where the influence of the outward desorption of hydrogen is large, that is, the light receiving pixel region. good. Further, it is desirable that the thickness t4 is, for example, in the range of 200 nm to 500 nm from the viewpoint of light shielding, suppression of hydrogen desorption, and securing of power (condensing power) of the lens in the layer.

The thickness t4 of the translucent film 410 between the lower end 421 of the light-shielding portion 420 and the antireflection film 407 is preferably thin from the viewpoint of light-shielding, but between the lower end 421 of the light-shielding portion 420 and the antireflection film 407. When the thickness t4 of the translucent film 410 is thin, desorption of hydrogen to the outside of the element proceeds. Therefore, the thickness t4 is preferably 100 nm or more. In order to effectively suppress the desorption of hydrogen to the outside of the device, the thickness t4 is preferably in the range of 200 nm to 800 nm. However, the thickness t4 is preferably 500 nm or less in order to prevent light incident on the translucent film 410 from traveling through the translucent film 140 and leaking to adjacent pixels to cause color mixing. It is preferable that t1, t5 and t4 satisfy t1 <t4 <t5. The waveguide 480 is an optional component.

Hereinafter, the device 800 according to one embodiment of the present invention will be described with reference to FIG. 21. The device 800 includes the above-mentioned photoelectric conversion device. The photoelectric conversion device in the apparatus 800 is not limited to photographing, but can perform photoelectric conversion for focus detection, distance measurement, light measurement, and the like. The concept of a device includes not only a device whose main purpose is photoelectric conversion or photography, but also a device which has an auxiliary photoelectric conversion or photography function. Examples of the device 800 include electronic devices such as cameras, personal computers and mobile terminals, transportation devices such as automobiles, ships and airplanes, medical devices such as endoscopes and radiation diagnostic devices, and analysis devices using energy rays. be. The apparatus includes a photoelectric conversion device according to the present invention exemplified as the above embodiment, and a processing unit that processes a signal (image) output from the photoelectric conversion device. The processing unit may include a processor that processes a signal output from the photoelectric conversion device.

The device 800 includes, for example, an optical system 810, a photoelectric conversion device 100, a signal processing unit (processing unit) 830, a recording / communication unit 840, a timing control unit 850, a system controller 860, and a reproduction / display unit 870. The optical system 810 and the image of the subject are formed on the pixel array of the photoelectric conversion device 100. The photoelectric conversion device 100 performs an image pickup operation according to a signal from the timing control unit 850 and outputs an image. The image output from the photoelectric conversion device 100 is provided to the signal processing unit 830.

The signal processing unit 830 processes the signal provided by the photoelectric conversion device 100 and provides the signal processing unit 830 to the recording / communication unit 840. The recording / communication unit 840 sends the image to the reproduction / display unit 870, and causes the reproduction / display unit 870 to reproduce and display the image. The recording / communication unit 840 and the signal processing unit 830 also record an image on a recording medium (not shown).

The timing control unit 850 controls the drive timing of the photoelectric conversion device 100 and the signal processing unit 830 based on the control by the system controller 860. The system controller 860 comprehensively controls the operation of the device 800, and controls the driving of the optical system 810, the timing control unit 850, the recording / communication unit 840, and the reproduction / display unit 870. The system controller 860 includes, for example, a storage device (not shown) in which a program necessary for controlling the operation of the imaging system is recorded. Further, the system controller 860 sets the mode according to the operation by the user, for example.

The embodiments described above can be appropriately changed within a range that does not deviate from the technical idea. For example, a plurality of embodiments may be combined, one embodiment may be replaced with another, or any other embodiment may be used. Some items may be deleted. It should be noted that the disclosure content of this specification includes not only what is described in this specification but also all matters that can be grasped from this specification and the drawings attached to this specification. The disclosure of this specification also includes a complement of the concepts described herein. That is, if there is a description in the present specification that "A is larger than B", for example, even if the description that "A is not larger than B" is omitted, the present specification states that "A is larger than B". It can be said that it discloses "not big". This is because when it is stated that "A is larger than B", it is premised that "A is not larger than B" is taken into consideration.

100: photoelectric conversion device, 101: light receiving pixel area, 102: light shielding pixel area, 103: peripheral circuit area, 110: semiconductor layer, 112a, 112b: photoelectric conversion unit, 130: waveguide, 131: connecting portion, 134: light shielding Membrane, 141: In-layer lens, 143: Shading

Claims (23)

A photoelectric conversion device having a light-receiving pixel area and a light-shielding pixel area.
A semiconductor layer having a plurality of photoelectric conversion units provided in the light receiving pixel region and a plurality of photoelectric conversion units provided in the light shielding pixel region.
A light-shielding unit arranged on the semiconductor layer in the light-receiving pixel region so as to surround an optical path of light incident on each of the plurality of photoelectric conversion units provided in the light-receiving pixel region.
A light-shielding film arranged on the semiconductor layer in the light-shielding pixel region so as to cover the plurality of photoelectric conversion portions provided in the light-shielding pixel region is provided.
The light-shielding portion is an upper end that is an end on the side of the semiconductor layer in a direction perpendicular to the main surface of the semiconductor layer and an upper end that is an end opposite to the lower end of the light-shielding portion in the vertical direction. And have
The light-shielding film has a lower surface that is a surface on the side of the semiconductor layer in the vertical direction and an upper surface that is a surface opposite to the semiconductor layer in the vertical direction, and the lower surface has the light-shielding surface. Along the main surface of the semiconductor layer so as to face the plurality of photoelectric conversion units provided in the pixel region.
The distance between the upper end of the light-shielding portion and the semiconductor layer is larger than the distance between the upper surface of the light-shielding film and the semiconductor layer.
The distance between the lower end of the light-shielding portion and the semiconductor layer is smaller than the distance between the upper surface of the light-shielding film and the semiconductor layer, and between the lower surface of the light-shielding film and the semiconductor layer. Greater than the distance
A photoelectric conversion device characterized by this. A plurality of waveguides arranged in an optical path of light incident on each of the plurality of photoelectric conversion units provided in the light receiving pixel region, and a plurality of waveguides.
Further provided with a connecting portion extending so as to connect the plurality of waveguides to each other.
The light-shielding portion is arranged on the connecting portion.
The photoelectric conversion device according to claim 1. The connecting portion extends from the light receiving pixel region to the light shielding film.
The photoelectric conversion device according to claim 2. A photoelectric conversion device having a light-receiving pixel area and a light-shielding pixel area.
A semiconductor layer having a plurality of photoelectric conversion units provided in the light receiving pixel region and a plurality of photoelectric conversion units provided in the light shielding pixel region.
A light-shielding unit arranged on the semiconductor layer in the light-receiving pixel region so as to surround an optical path of light incident on each of the plurality of photoelectric conversion units provided in the light-receiving pixel region.
A light-shielding film arranged on the semiconductor layer in the light-shielding pixel region so as to cover the plurality of photoelectric conversion portions provided in the light-shielding pixel region.
A plurality of waveguides arranged in an optical path of light incident on each of the plurality of photoelectric conversion units provided in the light-shielding pixel region, and a plurality of waveguides.
It is provided with a connecting portion that extends so as to connect the plurality of waveguides to each other and extends from the light receiving pixel region to the light shielding film.
The light-shielding portion is an upper end that is an end on the side of the semiconductor layer in a direction perpendicular to the main surface of the semiconductor layer and an upper end that is an end opposite to the lower end of the light-shielding portion in the vertical direction. And have
The light-shielding film has a lower surface that is a surface on the side of the semiconductor layer in the vertical direction and an upper surface that is a surface opposite to the semiconductor layer in the vertical direction, and the lower surface has the light-shielding surface. Along the main surface of the semiconductor layer so as to face the plurality of photoelectric conversion units provided in the pixel region.
The light-shielding portion is arranged on the connecting portion and
The distance between the upper end of the light-shielding portion and the semiconductor layer is larger than the distance between the upper surface of the light-shielding film and the semiconductor layer.
The distance between the lower end of the light-shielding portion and the semiconductor layer is smaller than the distance between the upper surface of the light-shielding film and the semiconductor layer.
A photoelectric conversion device characterized by this. The light-shielding portion has a continuous structure from the lower end of the light-shielding portion to the upper end of the light-shielding portion.
The photoelectric conversion device according to any one of claims 1 to 4. The light-shielding film has a continuous structure from the lower surface of the light-shielding film to the upper surface of the light-shielding film.
The photoelectric conversion device according to any one of claims 1 to 5. The distance between the lower end and the upper end of the light-shielding portion is larger than the thickness of the light-shielding film.
The photoelectric conversion device according to any one of claims 1 to 6, characterized in that. In a cross section including a part of the plurality of photoelectric conversion portions provided in the light receiving pixel region orthogonal to the main surface of the semiconductor layer, the width of the light shielding portion in the direction parallel to the main surface is 0.5 μm or less. Is,
The photoelectric conversion device according to any one of claims 1 to 7. A compound film disposed on the semiconductor layer over the light receiving pixel region and the light shielding pixel region and further comprising a compound film composed of a compound containing silicon and nitrogen, in the light receiving pixel region, the compound film is the light shielding portion and the semiconductor. The light-shielding film is located between the layer and the light-shielding pixel region, and the light-shielding film is located between the compound film and the semiconductor layer.
The photoelectric conversion device according to any one of claims 1 to 8. The distance between the lower surface of the compound film and the semiconductor layer in the light receiving pixel region is smaller than the distance between the upper surface of the light-shielding film and the semiconductor layer.
The photoelectric conversion device according to claim 9. The compound film includes a plurality of in-layer lenses arranged in optical paths of light incident on the plurality of photoelectric conversion units provided in the light receiving pixel region.
The photoelectric conversion device according to claim 9 or 10. A plurality of in-layer lens layers arranged on the semiconductor layer are further provided, and the in-layer lens layers are each arranged in an optical path of light incident on the plurality of photoelectric conversion units provided in the light receiving pixel region. The distance between the upper surface of the portion of the in-layer lens layer in the light receiving pixel region located between the plurality of in-layer lenses and the semiconductor layer is the distance between the light-shielding film and the semiconductor layer. Less than the distance between the top surface and the semiconductor layer,
The photoelectric conversion device according to any one of claims 1 to 8. The distance between the apex of the plurality of in-layer lenses and the semiconductor layer in the light receiving pixel region is smaller than the distance between the upper surface of the light-shielding film and the semiconductor layer.
The photoelectric conversion device according to claim 11 or 12. A wiring layer arranged on the semiconductor layer in the light receiving pixel region and the light shielding pixel region,
The light-shielding portion and the insulating film arranged between the light-shielding film and the wiring layer are further provided.
The photoelectric conversion device according to any one of claims 1 to 13. Further, the semiconductor layer is further provided with the light-shielding portion and the wiring layer arranged on the side opposite to the light-shielding film.
The photoelectric conversion device according to any one of claims 1 to 13. The light-shielding portion has a grid-like structure.
The photoelectric conversion device according to any one of claims 1 to 15, characterized in that. The light-shielding portion has a plurality of portions electrically isolated from each other.
The photoelectric conversion device according to any one of claims 1 to 16. Each of the optical paths of light incident on the plurality of photoelectric conversion portions provided in the light receiving pixel region is surrounded by four portions of the light shielding portion.
The photoelectric conversion device according to any one of claims 1 to 17, characterized in that. The plurality of photoelectric conversion units provided in the light receiving pixel region are arranged so as to form a plurality of rows and a plurality of columns, and the signal of the photoelectric conversion unit in each column is output through the column signal line.
Each of the plurality of parts corresponds to one column and is continuous without being divided.
The photoelectric conversion device according to claim 17. It is configured to give a fixed potential to the light-shielding portion.
The photoelectric conversion device according to any one of claims 1 to 19. The compound film has a thinner portion in the light receiving pixel region than a portion of the compound film extending from the light receiving pixel region to a region outside the light receiving pixel region.
The photoelectric conversion device according to any one of claims 9 to 11. The compound film has a portion arranged between the light-shielding portion and the semiconductor layer in the light-receiving pixel region, and an extending portion extending from the light-receiving pixel region to a region outside the light-receiving pixel region. Including, when the thickness of the portion of the compound film in the light receiving pixel region is t1, the thickness of the extending portion is t2, and the thickness of the lens in the layer is t3.
| T3-t2 | <| t3-t1 |
The photoelectric conversion device according to claim 11, wherein the photoelectric conversion device satisfies the above conditions. The photoelectric conversion device according to any one of claims 1 to 22 and
A processing unit that processes the signal output from the photoelectric conversion device, and
A device characterized by being equipped with.

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