JP7003150B2 - 確率性を仮定した計量および加工 - Google Patents
確率性を仮定した計量および加工 Download PDFInfo
- Publication number
- JP7003150B2 JP7003150B2 JP2019552277A JP2019552277A JP7003150B2 JP 7003150 B2 JP7003150 B2 JP 7003150B2 JP 2019552277 A JP2019552277 A JP 2019552277A JP 2019552277 A JP2019552277 A JP 2019552277A JP 7003150 B2 JP7003150 B2 JP 7003150B2
- Authority
- JP
- Japan
- Prior art keywords
- stochastic
- protected areas
- pattern
- sample
- candidate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005303 weighing Methods 0.000 title claims description 74
- 238000012545 processing Methods 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 claims description 83
- 238000001459 lithography Methods 0.000 claims description 71
- 230000007547 defect Effects 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 54
- 235000012431 wafers Nutrition 0.000 claims description 41
- 229920002120 photoresistant polymer Polymers 0.000 claims description 30
- 238000003754 machining Methods 0.000 claims description 29
- 238000010521 absorption reaction Methods 0.000 claims description 27
- 238000009826 distribution Methods 0.000 claims description 21
- 238000004458 analytical method Methods 0.000 claims description 18
- 238000007689 inspection Methods 0.000 claims description 16
- 238000005259 measurement Methods 0.000 claims description 15
- 230000000694 effects Effects 0.000 claims description 14
- 238000005070 sampling Methods 0.000 claims description 13
- 230000035945 sensitivity Effects 0.000 claims description 13
- 238000012360 testing method Methods 0.000 claims description 13
- 238000005286 illumination Methods 0.000 claims description 10
- 238000012544 monitoring process Methods 0.000 claims description 7
- 238000012937 correction Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000013528 artificial neural network Methods 0.000 claims description 2
- 238000013135 deep learning Methods 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims 2
- 230000001629 suppression Effects 0.000 claims 2
- 238000004088 simulation Methods 0.000 description 33
- 239000010410 layer Substances 0.000 description 19
- 230000006870 function Effects 0.000 description 17
- 239000000463 material Substances 0.000 description 16
- 238000013461 design Methods 0.000 description 15
- 230000003287 optical effect Effects 0.000 description 15
- 238000005530 etching Methods 0.000 description 13
- 230000005855 radiation Effects 0.000 description 13
- 230000008859 change Effects 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 10
- 238000004422 calculation algorithm Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 238000004904 shortening Methods 0.000 description 7
- 239000002253 acid Substances 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000001803 electron scattering Methods 0.000 description 5
- 230000004044 response Effects 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000002948 stochastic simulation Methods 0.000 description 3
- 238000000342 Monte Carlo simulation Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 231100000673 dose–response relationship Toxicity 0.000 description 2
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000000513 principal component analysis Methods 0.000 description 2
- 210000001747 pupil Anatomy 0.000 description 2
- 238000012706 support-vector machine Methods 0.000 description 2
- SGTNSNPWRIOYBX-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-{[2-(3,4-dimethoxyphenyl)ethyl](methyl)amino}-2-(propan-2-yl)pentanenitrile Chemical compound C1=C(OC)C(OC)=CC=C1CCN(C)CCCC(C#N)(C(C)C)C1=CC=C(OC)C(OC)=C1 SGTNSNPWRIOYBX-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000000701 chemical imaging Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- OYFJQPXVCSSHAI-QFPUQLAESA-N enalapril maleate Chemical compound OC(=O)\C=C/C(O)=O.C([C@@H](C(=O)OCC)N[C@@H](C)C(=O)N1[C@@H](CCC1)C(O)=O)CC1=CC=CC=C1 OYFJQPXVCSSHAI-QFPUQLAESA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010801 machine learning Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005309 stochastic process Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B23/00—Testing or monitoring of control systems or parts thereof
- G05B23/02—Electric testing or monitoring
- G05B23/0205—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults
- G05B23/0218—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults
- G05B23/0243—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults model based detection method, e.g. first-principles knowledge model
- G05B23/0254—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults model based detection method, e.g. first-principles knowledge model based on a quantitative model, e.g. mathematical relationships between inputs and outputs; functions: observer, Kalman filter, residual calculation, Neural Networks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8883—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges involving the calculation of gauges, generating models
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N2021/95676—Masks, reticles, shadow masks
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B23/00—Testing or monitoring of control systems or parts thereof
- G05B23/02—Electric testing or monitoring
- G05B23/0205—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults
- G05B23/0259—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterized by the response to fault detection
- G05B23/0286—Modifications to the monitored process, e.g. stopping operation or adapting control
- G05B23/0294—Optimizing process, e.g. process efficiency, product quality
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Artificial Intelligence (AREA)
- Evolutionary Computation (AREA)
- Mathematical Physics (AREA)
- Automation & Control Theory (AREA)
- Signal Processing (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762475072P | 2017-03-22 | 2017-03-22 | |
| US62/475,072 | 2017-03-22 | ||
| US15/612,279 | 2017-06-02 | ||
| US15/612,279 US10474042B2 (en) | 2017-03-22 | 2017-06-02 | Stochastically-aware metrology and fabrication |
| PCT/US2018/022769 WO2018175213A1 (en) | 2017-03-22 | 2018-03-16 | Stochastically-aware metrology and fabrication |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020515077A JP2020515077A (ja) | 2020-05-21 |
| JP2020515077A5 JP2020515077A5 (enExample) | 2021-04-22 |
| JP7003150B2 true JP7003150B2 (ja) | 2022-01-20 |
Family
ID=63582526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019552277A Active JP7003150B2 (ja) | 2017-03-22 | 2018-03-16 | 確率性を仮定した計量および加工 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10474042B2 (enExample) |
| JP (1) | JP7003150B2 (enExample) |
| KR (1) | KR102327900B1 (enExample) |
| TW (1) | TWI751305B (enExample) |
| WO (1) | WO2018175213A1 (enExample) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10437951B2 (en) * | 2017-08-23 | 2019-10-08 | International Business Machines Corporation | Care area generation by detection optimized methodology |
| US11088039B2 (en) * | 2017-10-23 | 2021-08-10 | Applied Materials, Inc. | Data management and mining to correlate wafer alignment, design, defect, process, tool, and metrology data |
| US11775714B2 (en) * | 2018-03-09 | 2023-10-03 | Pdf Solutions, Inc. | Rational decision-making tool for semiconductor processes |
| US10606975B2 (en) * | 2018-05-31 | 2020-03-31 | International Business Machines Corporation | Coordinates-based generative adversarial networks for generating synthetic physical design layout patterns |
| US10592635B2 (en) * | 2018-05-31 | 2020-03-17 | International Business Machines Corporation | Generating synthetic layout patterns by feedforward neural network based variational autoencoders |
| KR102666072B1 (ko) * | 2018-06-05 | 2024-05-17 | 삼성전자주식회사 | 기계 학습 장치 및 기계 학습 장치의 학습 방법 |
| US10706200B2 (en) | 2018-06-05 | 2020-07-07 | International Business Machines Corporation | Generative adversarial networks for generating physical design layout patterns of integrated multi-layers |
| US10699055B2 (en) | 2018-06-12 | 2020-06-30 | International Business Machines Corporation | Generative adversarial networks for generating physical design layout patterns |
| US10818001B2 (en) * | 2018-09-07 | 2020-10-27 | Kla-Tencor Corporation | Using stochastic failure metrics in semiconductor manufacturing |
| US11747291B2 (en) * | 2018-11-12 | 2023-09-05 | Hitachi High-Tech Corporation | System for estimating the occurrence of defects, and computer-readable medium |
| CN113424107B (zh) * | 2019-02-25 | 2023-09-19 | 应用材料以色列公司 | 检测稀有随机缺陷的系统与方法 |
| US10990019B2 (en) * | 2019-04-09 | 2021-04-27 | Kla Corporation | Stochastic reticle defect dispositioning |
| KR102711823B1 (ko) * | 2019-07-03 | 2024-10-02 | 에이에스엠엘 네델란즈 비.브이. | 반도체 제조 공정에서 증착 모델을 적용하는 방법 |
| US12332573B2 (en) | 2019-09-05 | 2025-06-17 | Asml Netherlands B.V. | Method for determining defectiveness of pattern based on after development image |
| KR102812085B1 (ko) * | 2019-09-05 | 2025-05-23 | 에이에스엠엘 네델란즈 비.브이. | 현상 후 이미지에 기초하여 패턴의 결함이 있음을 결정하는 방법 |
| KR20220065769A (ko) * | 2019-09-25 | 2022-05-20 | 시놉시스, 인크. | 결함 확률 분포들 및 임계 치수 변동들에 기초한 리소그래피 개선 |
| CN114556218A (zh) * | 2019-10-16 | 2022-05-27 | 应用材料公司 | 光刻系统及形成图案的方法 |
| KR102850033B1 (ko) * | 2019-12-19 | 2025-08-22 | 삼성전자주식회사 | 광학 근접 보상 검증 방법 및 이를 포함하는 반도체 제조 방법 |
| KR20220133228A (ko) * | 2020-01-27 | 2022-10-04 | 램 리써치 코포레이션 | 반도체-제작 프로세스들을 위한 성능 예측기들 |
| WO2022040211A1 (en) * | 2020-08-17 | 2022-02-24 | Tokyo Electron Limited | Method for producing overlay results with absolute reference for semiconductor manufacturing |
| CN115885216A (zh) * | 2020-08-19 | 2023-03-31 | Asml荷兰有限公司 | 用于基于图像的图案选择的系统、产品和方法 |
| US11810284B2 (en) * | 2020-08-21 | 2023-11-07 | Kla Corporation | Unsupervised learning for repeater-defect detection |
| US11270054B1 (en) * | 2020-08-31 | 2022-03-08 | Siemens Industry Software Inc. | Method and system for calculating printed area metric indicative of stochastic variations of the lithographic process |
| KR20220093915A (ko) | 2020-12-28 | 2022-07-05 | 삼성전자주식회사 | 반도체 집적회로 레이아웃의 확률적 취약점 검출 방법 및 이를 수행하는 컴퓨터 시스템 |
| US11613114B2 (en) * | 2021-04-29 | 2023-03-28 | Lead Technologies, Inc. | Method, apparatus, and non-transitory computer-readable storage medium for altering a digital image for a printing job |
| US20230051330A1 (en) * | 2021-08-16 | 2023-02-16 | Applied Materials Inc. | Using defect models to estimate defect risk and optimize process recipes |
| KR20230028647A (ko) | 2021-08-20 | 2023-03-02 | 삼성전자주식회사 | Euv 리소그래피의 결함 예측 방법 및 이를 이용한 반도체 소자의 제조 방법 |
| US20230092729A1 (en) * | 2021-09-20 | 2023-03-23 | Kla Corporation | Semiconductor Profile Measurement Based On A Scanning Conditional Model |
| CN114861474B (zh) * | 2022-07-08 | 2022-10-04 | 西南交通大学 | 一种智能泵阀系统性能仿真处理方法及云计算服务系统 |
| US11966156B2 (en) * | 2022-08-16 | 2024-04-23 | Kla Corporation | Lithography mask repair by simulation of photoresist thickness evolution |
| US20250104214A1 (en) * | 2023-09-26 | 2025-03-27 | Kla Corporation | Method to calibrate, predict, and control stochastic defects in euv lithography |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120278768A1 (en) | 2011-04-29 | 2012-11-01 | Micron Technology, Inc. | Systems and methods for stochastic models of mask process variability |
| JP2013511152A (ja) | 2009-11-12 | 2013-03-28 | ケーエルエー−テンカー・コーポレーション | フォトレジストシミュレーション |
| JP2017505462A (ja) | 2014-02-11 | 2017-02-16 | エーエスエムエル ネザーランズ ビー.ブイ. | 任意パターンにおける確率的変動を計算するためのモデル |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5608526A (en) | 1995-01-19 | 1997-03-04 | Tencor Instruments | Focused beam spectroscopic ellipsometry method and system |
| US5859424A (en) | 1997-04-08 | 1999-01-12 | Kla-Tencor Corporation | Apodizing filter system useful for reducing spot size in optical measurements and other applications |
| US6429943B1 (en) | 2000-03-29 | 2002-08-06 | Therma-Wave, Inc. | Critical dimension analysis with simultaneous multiple angle of incidence measurements |
| JP4351522B2 (ja) | 2003-11-28 | 2009-10-28 | 株式会社日立ハイテクノロジーズ | パターン欠陥検査装置およびパターン欠陥検査方法 |
| US7478019B2 (en) | 2005-01-26 | 2009-01-13 | Kla-Tencor Corporation | Multiple tool and structure analysis |
| JP5175577B2 (ja) * | 2008-02-18 | 2013-04-03 | 株式会社日立ハイテクノロジーズ | 集積回路パターンの欠陥検査方法、及びその装置 |
| US8781781B2 (en) | 2010-07-30 | 2014-07-15 | Kla-Tencor Corp. | Dynamic care areas |
| US8504949B2 (en) * | 2011-07-26 | 2013-08-06 | Mentor Graphics Corporation | Hybrid hotspot detection |
| US8755045B2 (en) * | 2012-01-06 | 2014-06-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Detecting method for forming semiconductor device |
| US20130252350A1 (en) | 2012-03-26 | 2013-09-26 | Globalfoundries Singapore Pte. Ltd. | System and method for generating care areas for defect inspection |
| US10769320B2 (en) * | 2012-12-18 | 2020-09-08 | Kla-Tencor Corporation | Integrated use of model-based metrology and a process model |
| US10101670B2 (en) * | 2013-03-27 | 2018-10-16 | Kla-Tencor Corporation | Statistical model-based metrology |
| US9098891B2 (en) | 2013-04-08 | 2015-08-04 | Kla-Tencor Corp. | Adaptive sampling for semiconductor inspection recipe creation, defect review, and metrology |
| US9875946B2 (en) * | 2013-04-19 | 2018-01-23 | Kla-Tencor Corporation | On-device metrology |
| US9383661B2 (en) * | 2013-08-10 | 2016-07-05 | Kla-Tencor Corporation | Methods and apparatus for determining focus |
| US10935893B2 (en) * | 2013-08-11 | 2021-03-02 | Kla-Tencor Corporation | Differential methods and apparatus for metrology of semiconductor targets |
| US9494853B2 (en) * | 2013-12-18 | 2016-11-15 | Cypress Semiconductor Corporation | Increasing lithographic depth of focus window using wafer topography |
| US10747830B2 (en) * | 2014-11-21 | 2020-08-18 | Mesh Labs Inc. | Method and system for displaying electronic information |
| TWI620980B (zh) * | 2015-02-13 | 2018-04-11 | Asml荷蘭公司 | 影像對數斜率(ils)最佳化 |
| US10018571B2 (en) | 2015-05-28 | 2018-07-10 | Kla-Tencor Corporation | System and method for dynamic care area generation on an inspection tool |
| US10163733B2 (en) * | 2016-05-31 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of extracting defects |
-
2017
- 2017-06-02 US US15/612,279 patent/US10474042B2/en active Active
-
2018
- 2018-03-16 JP JP2019552277A patent/JP7003150B2/ja active Active
- 2018-03-16 KR KR1020197030905A patent/KR102327900B1/ko active Active
- 2018-03-16 WO PCT/US2018/022769 patent/WO2018175213A1/en not_active Ceased
- 2018-03-21 TW TW107109574A patent/TWI751305B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013511152A (ja) | 2009-11-12 | 2013-03-28 | ケーエルエー−テンカー・コーポレーション | フォトレジストシミュレーション |
| US20120278768A1 (en) | 2011-04-29 | 2012-11-01 | Micron Technology, Inc. | Systems and methods for stochastic models of mask process variability |
| JP2017505462A (ja) | 2014-02-11 | 2017-02-16 | エーエスエムエル ネザーランズ ビー.ブイ. | 任意パターンにおける確率的変動を計算するためのモデル |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018175213A1 (en) | 2018-09-27 |
| TW201841075A (zh) | 2018-11-16 |
| KR20190123352A (ko) | 2019-10-31 |
| US20180275523A1 (en) | 2018-09-27 |
| TWI751305B (zh) | 2022-01-01 |
| JP2020515077A (ja) | 2020-05-21 |
| KR102327900B1 (ko) | 2021-11-18 |
| US10474042B2 (en) | 2019-11-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7003150B2 (ja) | 確率性を仮定した計量および加工 | |
| US10670974B2 (en) | Metrology apparatus for and a method of determining a characteristic of interest of a structure on a substrate | |
| KR102617197B1 (ko) | 프린트된 기판으로부터의 측정 피드백에 기초한 패턴 랭킹 결정 | |
| US10634490B2 (en) | Determining edge roughness parameters | |
| US9863761B2 (en) | Critical dimension uniformity monitoring for extreme ultraviolet reticles | |
| KR20210090253A (ko) | 패터닝 공정에서의 웨이퍼 거동을 결정하기 위해 이미지 패턴들을 그룹화하는 장치 및 방법 | |
| US11353796B2 (en) | Method and apparatus for determining a radiation beam intensity profile | |
| CN105580123A (zh) | 多模型计量 | |
| NL2006700A (en) | Method and apparatus for measuring a structure on a substrate, computer program products for implementing such methods & apparatus. | |
| US20220035256A1 (en) | Determining hot spot ranking based on wafer measurement | |
| NL2003294A (en) | A method of measuring overlay error and a device manufacturing method. | |
| US9360768B2 (en) | Inspection method and apparatus | |
| US20220397834A1 (en) | Measuring method and measuring apparatus | |
| US9304077B2 (en) | Inspection apparatus and method | |
| EP3528048A1 (en) | A metrology apparatus for and a method of determining a characteristic of interest of a structure on a substrate | |
| TWI815419B (zh) | 用於判定與微影製程相關之隨機度量之方法 | |
| CN108292107B (zh) | 二维或三维形状的分层式表示 | |
| EP3467589A1 (en) | Determining edge roughness parameters | |
| CN114641726B (zh) | 集成式多工具光罩检验 | |
| NL2021703A (en) | Method and apparatus for determining a radiation beam intensity profile | |
| JP2025530062A (ja) | メトロロジ方法及び関連メトロロジデバイス | |
| WO2025051488A1 (en) | Substrate parameter measurement | |
| CN117255972A (zh) | 用于确定与光刻过程有关的随机度量的方法 | |
| NL2024935A (en) | Assemblies and methods for guiding radiation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210315 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210315 |
|
| A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20210315 |
|
| A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20210430 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210615 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210914 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20211207 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211228 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7003150 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |