TWI751305B - 隨機察覺度量衡及製造 - Google Patents
隨機察覺度量衡及製造 Download PDFInfo
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- TWI751305B TWI751305B TW107109574A TW107109574A TWI751305B TW I751305 B TWI751305 B TW I751305B TW 107109574 A TW107109574 A TW 107109574A TW 107109574 A TW107109574 A TW 107109574A TW I751305 B TWI751305 B TW I751305B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 164
- 230000007547 defect Effects 0.000 claims abstract description 206
- 238000005286 illumination Methods 0.000 claims description 136
- 238000000034 method Methods 0.000 claims description 70
- 238000001459 lithography Methods 0.000 claims description 50
- 229920002120 photoresistant polymer Polymers 0.000 claims description 47
- 238000010521 absorption reaction Methods 0.000 claims description 27
- 230000003287 optical effect Effects 0.000 claims description 22
- 238000009826 distribution Methods 0.000 claims description 18
- 238000007689 inspection Methods 0.000 claims description 15
- 238000012360 testing method Methods 0.000 claims description 13
- 238000005070 sampling Methods 0.000 claims description 12
- 230000035945 sensitivity Effects 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 10
- 238000005259 measurement Methods 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 7
- 238000012937 correction Methods 0.000 claims description 6
- 230000008447 perception Effects 0.000 claims description 5
- 238000013528 artificial neural network Methods 0.000 claims description 2
- 238000013135 deep learning Methods 0.000 claims description 2
- 230000000116 mitigating effect Effects 0.000 claims 11
- 229920000642 polymer Polymers 0.000 claims 3
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 40
- 238000004088 simulation Methods 0.000 description 28
- 239000010410 layer Substances 0.000 description 20
- 239000000463 material Substances 0.000 description 17
- 230000005855 radiation Effects 0.000 description 16
- 238000013461 design Methods 0.000 description 15
- 230000008569 process Effects 0.000 description 12
- 230000004044 response Effects 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- 238000004458 analytical method Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 238000004422 calculation algorithm Methods 0.000 description 9
- 238000002948 stochastic simulation Methods 0.000 description 8
- 239000006185 dispersion Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- 238000001803 electron scattering Methods 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 238000009472 formulation Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 231100000673 dose–response relationship Toxicity 0.000 description 2
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 2
- 238000012880 independent component analysis Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000000513 principal component analysis Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 210000001747 pupil Anatomy 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012706 support-vector machine Methods 0.000 description 2
- 238000012549 training Methods 0.000 description 2
- SGTNSNPWRIOYBX-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-{[2-(3,4-dimethoxyphenyl)ethyl](methyl)amino}-2-(propan-2-yl)pentanenitrile Chemical compound C1=C(OC)C(OC)=CC=C1CCN(C)CCCC(C#N)(C(C)C)C1=CC=C(OC)C(OC)=C1 SGTNSNPWRIOYBX-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000701 chemical imaging Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000010801 machine learning Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000010244 region-of-interest analysis Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B23/00—Testing or monitoring of control systems or parts thereof
- G05B23/02—Electric testing or monitoring
- G05B23/0205—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults
- G05B23/0218—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults
- G05B23/0243—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults model based detection method, e.g. first-principles knowledge model
- G05B23/0254—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults model based detection method, e.g. first-principles knowledge model based on a quantitative model, e.g. mathematical relationships between inputs and outputs; functions: observer, Kalman filter, residual calculation, Neural Networks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8883—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges involving the calculation of gauges, generating models
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N2021/95676—Masks, reticles, shadow masks
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B23/00—Testing or monitoring of control systems or parts thereof
- G05B23/02—Electric testing or monitoring
- G05B23/0205—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults
- G05B23/0259—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterized by the response to fault detection
- G05B23/0286—Modifications to the monitored process, e.g. stopping operation or adapting control
- G05B23/0294—Optimizing process, e.g. process efficiency, product quality
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Artificial Intelligence (AREA)
- Evolutionary Computation (AREA)
- Mathematical Physics (AREA)
- Automation & Control Theory (AREA)
- Signal Processing (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762475072P | 2017-03-22 | 2017-03-22 | |
| US62/475,072 | 2017-03-22 | ||
| US15/612,279 | 2017-06-02 | ||
| US15/612,279 US10474042B2 (en) | 2017-03-22 | 2017-06-02 | Stochastically-aware metrology and fabrication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201841075A TW201841075A (zh) | 2018-11-16 |
| TWI751305B true TWI751305B (zh) | 2022-01-01 |
Family
ID=63582526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107109574A TWI751305B (zh) | 2017-03-22 | 2018-03-21 | 隨機察覺度量衡及製造 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10474042B2 (enExample) |
| JP (1) | JP7003150B2 (enExample) |
| KR (1) | KR102327900B1 (enExample) |
| TW (1) | TWI751305B (enExample) |
| WO (1) | WO2018175213A1 (enExample) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10437951B2 (en) * | 2017-08-23 | 2019-10-08 | International Business Machines Corporation | Care area generation by detection optimized methodology |
| US11088039B2 (en) * | 2017-10-23 | 2021-08-10 | Applied Materials, Inc. | Data management and mining to correlate wafer alignment, design, defect, process, tool, and metrology data |
| US11775714B2 (en) * | 2018-03-09 | 2023-10-03 | Pdf Solutions, Inc. | Rational decision-making tool for semiconductor processes |
| US10606975B2 (en) * | 2018-05-31 | 2020-03-31 | International Business Machines Corporation | Coordinates-based generative adversarial networks for generating synthetic physical design layout patterns |
| US10592635B2 (en) * | 2018-05-31 | 2020-03-17 | International Business Machines Corporation | Generating synthetic layout patterns by feedforward neural network based variational autoencoders |
| KR102666072B1 (ko) * | 2018-06-05 | 2024-05-17 | 삼성전자주식회사 | 기계 학습 장치 및 기계 학습 장치의 학습 방법 |
| US10706200B2 (en) | 2018-06-05 | 2020-07-07 | International Business Machines Corporation | Generative adversarial networks for generating physical design layout patterns of integrated multi-layers |
| US10699055B2 (en) | 2018-06-12 | 2020-06-30 | International Business Machines Corporation | Generative adversarial networks for generating physical design layout patterns |
| US10818001B2 (en) * | 2018-09-07 | 2020-10-27 | Kla-Tencor Corporation | Using stochastic failure metrics in semiconductor manufacturing |
| US11747291B2 (en) * | 2018-11-12 | 2023-09-05 | Hitachi High-Tech Corporation | System for estimating the occurrence of defects, and computer-readable medium |
| CN113424107B (zh) * | 2019-02-25 | 2023-09-19 | 应用材料以色列公司 | 检测稀有随机缺陷的系统与方法 |
| US10990019B2 (en) * | 2019-04-09 | 2021-04-27 | Kla Corporation | Stochastic reticle defect dispositioning |
| KR102711823B1 (ko) * | 2019-07-03 | 2024-10-02 | 에이에스엠엘 네델란즈 비.브이. | 반도체 제조 공정에서 증착 모델을 적용하는 방법 |
| US12332573B2 (en) | 2019-09-05 | 2025-06-17 | Asml Netherlands B.V. | Method for determining defectiveness of pattern based on after development image |
| KR102812085B1 (ko) * | 2019-09-05 | 2025-05-23 | 에이에스엠엘 네델란즈 비.브이. | 현상 후 이미지에 기초하여 패턴의 결함이 있음을 결정하는 방법 |
| KR20220065769A (ko) * | 2019-09-25 | 2022-05-20 | 시놉시스, 인크. | 결함 확률 분포들 및 임계 치수 변동들에 기초한 리소그래피 개선 |
| CN114556218A (zh) * | 2019-10-16 | 2022-05-27 | 应用材料公司 | 光刻系统及形成图案的方法 |
| KR102850033B1 (ko) * | 2019-12-19 | 2025-08-22 | 삼성전자주식회사 | 광학 근접 보상 검증 방법 및 이를 포함하는 반도체 제조 방법 |
| KR20220133228A (ko) * | 2020-01-27 | 2022-10-04 | 램 리써치 코포레이션 | 반도체-제작 프로세스들을 위한 성능 예측기들 |
| WO2022040211A1 (en) * | 2020-08-17 | 2022-02-24 | Tokyo Electron Limited | Method for producing overlay results with absolute reference for semiconductor manufacturing |
| CN115885216A (zh) * | 2020-08-19 | 2023-03-31 | Asml荷兰有限公司 | 用于基于图像的图案选择的系统、产品和方法 |
| US11810284B2 (en) * | 2020-08-21 | 2023-11-07 | Kla Corporation | Unsupervised learning for repeater-defect detection |
| US11270054B1 (en) * | 2020-08-31 | 2022-03-08 | Siemens Industry Software Inc. | Method and system for calculating printed area metric indicative of stochastic variations of the lithographic process |
| KR20220093915A (ko) | 2020-12-28 | 2022-07-05 | 삼성전자주식회사 | 반도체 집적회로 레이아웃의 확률적 취약점 검출 방법 및 이를 수행하는 컴퓨터 시스템 |
| US11613114B2 (en) * | 2021-04-29 | 2023-03-28 | Lead Technologies, Inc. | Method, apparatus, and non-transitory computer-readable storage medium for altering a digital image for a printing job |
| US20230051330A1 (en) * | 2021-08-16 | 2023-02-16 | Applied Materials Inc. | Using defect models to estimate defect risk and optimize process recipes |
| KR20230028647A (ko) | 2021-08-20 | 2023-03-02 | 삼성전자주식회사 | Euv 리소그래피의 결함 예측 방법 및 이를 이용한 반도체 소자의 제조 방법 |
| US20230092729A1 (en) * | 2021-09-20 | 2023-03-23 | Kla Corporation | Semiconductor Profile Measurement Based On A Scanning Conditional Model |
| CN114861474B (zh) * | 2022-07-08 | 2022-10-04 | 西南交通大学 | 一种智能泵阀系统性能仿真处理方法及云计算服务系统 |
| US11966156B2 (en) * | 2022-08-16 | 2024-04-23 | Kla Corporation | Lithography mask repair by simulation of photoresist thickness evolution |
| US20250104214A1 (en) * | 2023-09-26 | 2025-03-27 | Kla Corporation | Method to calibrate, predict, and control stochastic defects in euv lithography |
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2018
- 2018-03-16 JP JP2019552277A patent/JP7003150B2/ja active Active
- 2018-03-16 KR KR1020197030905A patent/KR102327900B1/ko active Active
- 2018-03-16 WO PCT/US2018/022769 patent/WO2018175213A1/en not_active Ceased
- 2018-03-21 TW TW107109574A patent/TWI751305B/zh active
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2018175213A1 (en) | 2018-09-27 |
| JP7003150B2 (ja) | 2022-01-20 |
| TW201841075A (zh) | 2018-11-16 |
| KR20190123352A (ko) | 2019-10-31 |
| US20180275523A1 (en) | 2018-09-27 |
| JP2020515077A (ja) | 2020-05-21 |
| KR102327900B1 (ko) | 2021-11-18 |
| US10474042B2 (en) | 2019-11-12 |
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