JP6985496B2 - 熱伝導性ヒートシンクを備えた超伝導デバイス - Google Patents
熱伝導性ヒートシンクを備えた超伝導デバイス Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 230000035515 penetration Effects 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 239000010948 rhodium Substances 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 241000724291 Tobacco streak virus Species 0.000 claims 1
- 239000000463 material Substances 0.000 description 11
- 239000004020 conductor Substances 0.000 description 5
- 239000002784 hot electron Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002887 superconductor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
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- 230000000149 penetrating effect Effects 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
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Description
以下に、上記実施形態から把握できる技術思想を付記として記載する。
[付記1]
モノリシックマイクロ波集積回路(MMIC)であって、
基板の上にある誘電体構造と、
前記誘電体構造の第1の誘電体層内に存在する複数の超伝導構造と、
前記誘電体構造の第2の誘電体層内に存在する複数の抵抗器と、
前記誘電体構造の中間層内に存在する複数の超伝導コンタクトと、前記中間層は前記第1の誘電体層と前記第2の誘電体層の間に存在し、前記複数の抵抗器の各々について、前記複数の超伝導コンタクトの第1の超伝導コンタクトは、所与の抵抗器の第1の端子を第1の超伝導構造に結合し、前記複数の超伝導コンタクトの第2の超伝導コンタクトは、前記所与の抵抗器の第2の端子を第2の超伝導構造に結合し、
共通接地を形成するとともに、電子がフォノンに変換される前に、前記複数の抵抗器から電子を移動させるために、前記複数の抵抗器の各々の前記第2の端子に結合された熱伝導性ヒートシンク構造とを備えるMMIC。
[付記2]
前記熱伝導性ヒートシンク構造は、前記誘電体構造に封入されている、付記1に記載のMMIC。
[付記3]
前記熱伝導性ヒートシンク構造は、誘電体構造の一部を貫通して延在する熱伝導性コンタクトによって前記複数の抵抗器の各々の第2の端子に結合される熱伝導性ヒートシンクプレートであり、前記熱伝導性ヒートシンクプレートは、前記誘電体構造の上面および底面のうちの一方の上に配置されている、付記1に記載のMMIC。
[付記4]
前記熱伝導性ヒートシンクプレートは、前記誘電体構造の前記上面に配置され、MMICはさらに前記誘電体構造の前記底面上に配置された熱伝導性ヒートスプレッダと、前記熱伝導性ヒートシンクプレートを前記熱伝導性ヒートスプレッダに結合する熱伝導性貫通基板ビア(TSV)とを備え、前記熱伝導性ヒートスプレッダは、クライオクーラーに隣接して配置されるように構成されている、付記3に記載のMMIC。
[付記5]
前記誘電体構造の前記上面上に配置された複数の追加の熱伝導性ヒートプレートをさらに備え、各追加の熱伝導性ヒートプレートは、個々の熱伝導性ヒートシンクプレートを前記熱伝導性ヒートスプレッダに結合する個々の熱伝導性基板貫通ビア(TSV)によって前記熱伝導性ヒートスプレッダに結合されている、付記4に記載のMMIC。
[付記6]
前記熱伝導性ヒートシンク構造は、銅、金、銀、タングステン、モリブデン、イリジウム、および/またはロジウムから形成される、付記1に記載のMMIC。
[付記7]
前記誘電体構造および前記基板は、キャリア内に存在する、付記1に記載のMMIC。
Claims (13)
- 集積回路であって、
抵抗器と、
前記抵抗器の第1の端子に結合された第1の超伝導構造と、
前記抵抗器の第2の端子に結合された第2の超伝導構造と、
電子がフォノンを生成する前に、前記抵抗器の電子から熱を除去するために、前記抵抗器の前記第2の端子に結合された熱伝導性ヒートシンク構造とを備える集積回路。 - 前記熱伝導性ヒートシンク構造は、超伝導ではない常伝導金属から形成されている、請求項1に記載の回路。
- 前記熱伝導性ヒートシンク構造は、前記抵抗器および前記第1および第2の超伝導構造とともに誘電体構造内に封入されている、請求項1に記載の回路。
- 前記熱伝導性ヒートシンク構造は、前記抵抗器および前記第1および第2の超伝導構造を封入する誘電体構造の一部を貫通して延在する熱伝導性コンタクトによって前記抵抗器に結合された熱伝導性ヒートシンクプレートであり、前記熱伝導性ヒートシンクプレートは、前記誘電体構造の上面の上および底面の下のうちの一方に配置されている、請求項1に記載の回路。
- 前記熱伝導性ヒートシンクプレートは、前記誘電体構造の前記上面上に配置され、回路はさらに、前記誘電体構造の前記底面の下に配置された熱伝導性ヒートスプレッダと、前記熱伝導性ヒートシンクプレートを前記熱伝導性ヒートスプレッダに結合する熱伝導性貫通基板ビア(TSV)とを備え、前記熱伝導性ヒートスプレッダは、クライオクーラーに隣接して配置されるように構成されている、請求項4に記載の回路。
- 前記第1および第2の超伝導構造が第1の誘電体層内に配置され、前記抵抗器が第2の誘電体層内に配置され、前記第1および第2の超伝導構造が、前記第1の誘電体層と前記第2の誘電体層との間に存在する中間誘電体層を貫通して延在する超伝導コンタクトによって前記抵抗器の個々の端子に結合され、前記第1の誘電体層、前記中間誘電体層、および前記第2の誘電体層が誘電体構造を形成する、請求項1に記載の回路。
- 複数の追加の抵抗器をさらに備え、各抵抗器は個々の超伝導構造の間に結合され、前記複数の追加の抵抗器の各々および前記抵抗器は、共通接地を形成する前記熱伝導性ヒートシンク構造に第2の端子上において結合される、請求項1に記載の回路。
- 前記超伝導構造が第1の誘電体層内に配置され、前記抵抗器および前記複数の追加の抵抗器が第2の誘電体層内に配置され、前記個々の超伝導構造が、前記第1の誘電体層と前記第2の誘電体層との間に存在する中間誘電体層を貫通して延在する超伝導コンタクトによって前記抵抗器の個々の端子に結合されて、複数の能動回路が形成される、請求項7に記載の回路。
- 前記熱伝導性ヒートシンク構造は、誘電体構造の一部を貫通して延在する熱伝導性コンタクトによって前記複数の追加の抵抗器の各々の第2の端子に結合される熱伝導性ヒートシンクプレートであり、前記熱伝導性ヒートシンクプレートは、前記誘電体構造の上面および底面のうちの一方の上に配置されている、請求項8に記載の回路。
- 前記熱伝導性ヒートシンクプレートは、前記誘電体構造の前記上面に配置され、回路はさらに前記誘電体構造の前記底面上に配置された熱伝導性ヒートスプレッダと、前記熱伝導性ヒートシンクプレートを前記熱伝導性ヒートスプレッダに結合する熱伝導性貫通基板ビア(TSV)とを備え、前記熱伝導性ヒートスプレッダは、クライオクーラーに隣接して配置されるように構成されている、請求項9に記載の回路。
- 前記誘電体構造の前記上面上に配置された複数の追加の熱伝導性ヒートプレートをさらに備え、各追加の熱伝導性ヒートプレートは、個々の熱伝導性ヒートシンクプレートを前記熱伝導性ヒートスプレッダに結合する個々の熱伝導性基板貫通ビア(TSV)によって前記熱伝導性ヒートスプレッダに結合されている、請求項10に記載の回路。
- 前記熱伝導性ヒートシンク構造は、銅、金、銀、タングステン、モリブデン、イリジウム、および/またはロジウムから形成される、請求項1に記載の回路。
- キャリアと、前記キャリア上に存在する請求項1に記載の集積回路とを備えるモノリシックマイクロ波集積回路(MMIC)。
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US15/677,756 | 2017-08-15 | ||
US15/677,756 US10290676B2 (en) | 2017-08-15 | 2017-08-15 | Superconducting device with thermally conductive heat sink |
PCT/US2018/045184 WO2019036209A1 (en) | 2017-08-15 | 2018-08-03 | SUPERCONDUCTING DEVICE WITH THERMAL DISSIPATOR THERMOCONDUCTIVE |
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US10229864B1 (en) | 2017-09-14 | 2019-03-12 | Northrop Grumman Systems Corporation | Cryogenic integrated circuit having a heat sink coupled to separate ground planes through differently sized thermal vias |
US10679924B2 (en) | 2018-03-05 | 2020-06-09 | Win Semiconductors Corp. | Semiconductor device with antenna integrated |
US11004763B2 (en) * | 2018-12-20 | 2021-05-11 | Northrop Grumman Systems Corporation | Superconducting device with multiple thermal sinks |
US11522118B2 (en) * | 2020-01-09 | 2022-12-06 | Northrop Grumman Systems Corporation | Superconductor structure with normal metal connection to a resistor and method of making the same |
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2017
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WO2019036209A1 (en) | 2019-02-21 |
EP4231808A3 (en) | 2023-12-27 |
KR102360801B1 (ko) | 2022-02-14 |
CA3071687C (en) | 2021-12-07 |
US20190058005A1 (en) | 2019-02-21 |
AU2018318000A1 (en) | 2020-02-20 |
EP3669400A1 (en) | 2020-06-24 |
KR20200039728A (ko) | 2020-04-16 |
EP3669400B1 (en) | 2024-04-03 |
AU2018318000B2 (en) | 2021-05-13 |
JP2020530944A (ja) | 2020-10-29 |
CA3071687A1 (en) | 2019-02-21 |
US10290676B2 (en) | 2019-05-14 |
EP4231808A2 (en) | 2023-08-23 |
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