JP6970632B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6970632B2
JP6970632B2 JP2018050096A JP2018050096A JP6970632B2 JP 6970632 B2 JP6970632 B2 JP 6970632B2 JP 2018050096 A JP2018050096 A JP 2018050096A JP 2018050096 A JP2018050096 A JP 2018050096A JP 6970632 B2 JP6970632 B2 JP 6970632B2
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semiconductor device
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Japanese (ja)
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JP2019161190A (ja
JP2019161190A5 (enExample
Inventor
達也 西脇
浩平 大麻
博 松葉
喜久夫 相田
洪 洪
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Priority to JP2018050096A priority Critical patent/JP6970632B2/ja
Priority to CN202210727614.4A priority patent/CN115101597A/zh
Priority to CN201810946471.XA priority patent/CN110277448B/zh
Priority to US16/126,668 priority patent/US10593793B2/en
Publication of JP2019161190A publication Critical patent/JP2019161190A/ja
Publication of JP2019161190A5 publication Critical patent/JP2019161190A5/ja
Priority to JP2021176918A priority patent/JP7284797B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/023—Manufacture or treatment of FETs having insulated gates [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/153—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/154—Dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/158—Dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/143—VDMOS having built-in components the built-in components being PN junction diodes

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  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2018050096A 2018-03-16 2018-03-16 半導体装置 Active JP6970632B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018050096A JP6970632B2 (ja) 2018-03-16 2018-03-16 半導体装置
CN202210727614.4A CN115101597A (zh) 2018-03-16 2018-08-20 半导体装置
CN201810946471.XA CN110277448B (zh) 2018-03-16 2018-08-20 半导体装置
US16/126,668 US10593793B2 (en) 2018-03-16 2018-09-10 Semiconductor device
JP2021176918A JP7284797B2 (ja) 2018-03-16 2021-10-28 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018050096A JP6970632B2 (ja) 2018-03-16 2018-03-16 半導体装置

Related Child Applications (1)

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JP2021176918A Division JP7284797B2 (ja) 2018-03-16 2021-10-28 半導体装置

Publications (3)

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JP2019161190A JP2019161190A (ja) 2019-09-19
JP2019161190A5 JP2019161190A5 (enExample) 2020-03-26
JP6970632B2 true JP6970632B2 (ja) 2021-11-24

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JP2018050096A Active JP6970632B2 (ja) 2018-03-16 2018-03-16 半導体装置

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US (1) US10593793B2 (enExample)
JP (1) JP6970632B2 (enExample)
CN (2) CN110277448B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7249269B2 (ja) * 2019-12-27 2023-03-30 株式会社東芝 半導体装置およびその製造方法
FR3128312B1 (fr) * 2021-10-20 2025-02-28 St Microelectronics Srl Dispositif électronique comprenant des transistors
CN116364755A (zh) * 2023-03-14 2023-06-30 瑶芯微电子科技(上海)有限公司 屏蔽栅沟槽型mosfet器件及其制作方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3405649B2 (ja) * 1996-12-05 2003-05-12 株式会社東芝 半導体装置
JP2001094104A (ja) * 1999-09-24 2001-04-06 Toshiba Corp 電力用半導体素子
JP2001284574A (ja) * 2000-03-30 2001-10-12 Toshiba Corp 絶縁ゲート付き半導体装置
JP4696335B2 (ja) * 2000-05-30 2011-06-08 株式会社デンソー 半導体装置およびその製造方法
US7566622B2 (en) * 2005-07-06 2009-07-28 International Rectifier Corporation Early contact, high cell density process
JP5055786B2 (ja) * 2006-02-20 2012-10-24 富士電機株式会社 Ｍｏｓ型半導体装置とその製造方法
JP5222466B2 (ja) * 2006-08-09 2013-06-26 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2011100877A (ja) * 2009-11-06 2011-05-19 Toshiba Corp 半導体装置及びその製造方法
JP5672766B2 (ja) 2010-05-17 2015-02-18 株式会社デンソー 半導体装置
JP5560991B2 (ja) 2010-07-23 2014-07-30 株式会社デンソー 半導体装置
JP2012204395A (ja) * 2011-03-23 2012-10-22 Toshiba Corp 半導体装置およびその製造方法
JP2014146666A (ja) * 2013-01-28 2014-08-14 Toshiba Corp 半導体装置
JP6271155B2 (ja) * 2013-05-21 2018-01-31 株式会社東芝 半導体装置
EP2942816B1 (en) 2013-08-15 2020-10-28 Fuji Electric Co., Ltd. Semiconductor device
EP2966683B1 (en) * 2013-10-04 2020-12-09 Fuji Electric Co., Ltd. Semiconductor device
JP6311723B2 (ja) * 2013-12-16 2018-04-18 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6448434B2 (ja) * 2015-03-25 2019-01-09 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6353804B2 (ja) * 2015-03-27 2018-07-04 株式会社 日立パワーデバイス 半導体装置及びそれを用いた電力変換装置
JP6509673B2 (ja) * 2015-08-10 2019-05-08 株式会社東芝 半導体装置
DE102015118524B4 (de) * 2015-10-29 2022-01-27 Infineon Technologies Ag Halbleiterbauelement mit isoliertem Gate mit sanftem Schaltverhalten und Verfahren zu dessen Herstellung
JP6378220B2 (ja) * 2016-02-01 2018-08-22 株式会社東芝 半導体装置
JP6507112B2 (ja) * 2016-03-16 2019-04-24 株式会社東芝 半導体装置
JP6739372B2 (ja) * 2017-02-21 2020-08-12 株式会社東芝 半導体装置
JP6872951B2 (ja) * 2017-03-30 2021-05-19 エイブリック株式会社 半導体装置及びその製造方法
US20180337172A1 (en) * 2017-05-19 2018-11-22 Sanken Electric Co., Ltd. Semiconductor Device

Also Published As

Publication number Publication date
US20190288103A1 (en) 2019-09-19
US10593793B2 (en) 2020-03-17
CN110277448A (zh) 2019-09-24
CN115101597A (zh) 2022-09-23
JP2019161190A (ja) 2019-09-19
CN110277448B (zh) 2022-07-26

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