JP6967118B2 - バッチ式基板処理装置及びその運用方法 - Google Patents
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- H01L21/67017—Apparatus for fluid treatment
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
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- Inorganic Chemistry (AREA)
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Description
15:蒸着副産物層
100:バッチ式基板処理装置
110:反応チューブ
115:基板ボート
120:蒸着ガス供給部
121:蒸着ガスノズル
121a:ガス噴射口
122:蒸着ガス供給配管
130:ヒータ部
140:付着層
141:酸化物層
142:酸窒化物層
150:洗浄ガス供給部
151:洗浄ガスノズル
151a:洗浄ガス噴射口
152:洗浄ガス供給配管
Claims (9)
- 基板が多段に積載される基板ボートを収容する内部空間を有する縦型の反応チューブと、
前記反応チューブの内部に蒸着ガスを供給する蒸着ガス供給部と、
前記反応チューブの外側に配置されて、前記反応チューブの内部に熱エネルギーを与えるヒータ部と、
前記反応チューブの内壁にコーティングされて、余剰の蒸着ガスによる蒸着副産物層が付着する付着層と、
前記蒸着副産物層を取り除くための洗浄ガスを供給する洗浄ガス供給部と、
を備え、
前記反応チューブは、准金属元素であるシリコン(Si)を含む石英(クォーツ)からなり、
前記付着層は、
前記反応チューブに接して形成され、ポスト遷移金属元素を含む酸化物層と、
前記酸化物層の上に形成されて、前記蒸着副産物層の付着面を与え、前記ポスト遷移金属元素と同一の金属元素を含む酸窒化物層と、
を備え、
前記蒸着副産物層は、前記酸窒化物層の上に付着して形成され、遷移金属元素を含む窒化物層であり、
前記酸化物層及び前記酸窒化物層は、前記洗浄ガスに対して前記反応チューブよりも高い耐食性を有するバッチ式基板処理装置。 - 前記付着層は、前記反応チューブの熱膨張係数と前記蒸着副産物層の熱膨張係数との間の熱膨張係数を有する請求項1に記載のバッチ式基板処理装置。
- 前記付着層と前記蒸着副産物層との間の熱膨張係数の差は、前記付着層と前記反応チューブとの間の熱膨張係数の差よりも小さい請求項2に記載のバッチ式基板処理装置。
- 前記付着層は、前記蒸着副産物層よりも低い弾性率を有する請求項1に記載のバッチ式基板処理装置。
- 前記付着層は、0.1〜100μmの厚さを有する請求項1に記載のバッチ式基板処理装置。
- 内壁に付着層がコーティングされた縦型の反応チューブを設ける過程と、
前記反応チューブの内部空間に蒸着ガスを供給して、基板ボートに多段に積載された基板に対する蒸着工程を行う過程と、
前記付着層に余剰の蒸着ガスによる蒸着副産物層が付着する過程と、
前記蒸着副産物層の付着厚さを確認する過程と、
計測された前記蒸着副産物層の付着厚さが予め設定された厚さ以上である場合に前記蒸着副産物層を取り除く過程と、
を含み、
前記反応チューブを設ける過程は、
前記反応チューブの内壁に、ポスト遷移金属元素を含む酸化物層を形成する過程と、
前記酸化物層の上に、前記蒸着副産物層の付着面を与え、前記ポスト遷移金属元素と同一の金属元素を含む酸窒化物層を形成する過程と、
を含み、
前記反応チューブは、准金属元素であるシリコン(Si)を含む石英(クォーツ)からなり、
前記蒸着副産物層は、前記酸窒化物層の上に付着して形成され、遷移金属元素を含む窒化物層であり、
前記蒸着副産物層を取り除く過程は、前記蒸着副産物層を取り除くための洗浄ガスを供給する過程を含み、
前記酸化物層及び前記酸窒化物層は、前記洗浄ガスに対して前記反応チューブよりも高い耐食性を有するバッチ式基板処理装置の運用方法。 - 前記付着層の厚さは、0.1〜100μmであり、
前記蒸着副産物層を取り除く過程は、前記蒸着副産物層の付着厚さが303nm以上である場合に行われる請求項6に記載のバッチ式基板処理装置の運用方法。 - 前記反応チューブの内部に熱エネルギーを与える過程をさらに含み、
前記付着層は、前記反応チューブの熱膨張係数と前記蒸着副産物層の熱膨張係数との間の熱膨張係数を有する請求項6に記載のバッチ式基板処理装置の運用方法。 - 前記付着層は、前記蒸着副産物層よりも低い弾性率を有する請求項6に記載のバッチ式基板処理装置の運用方法。
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KR1020190085807A KR102227909B1 (ko) | 2019-07-16 | 2019-07-16 | 배치식 기판처리장치 및 그 운용방법 |
KR10-2019-0085807 | 2019-07-16 |
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JPH07263370A (ja) | 1994-03-17 | 1995-10-13 | Tokyo Electron Ltd | 熱処理装置 |
TW514996B (en) | 1999-12-10 | 2002-12-21 | Tokyo Electron Ltd | Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film |
JP4540221B2 (ja) | 2000-04-21 | 2010-09-08 | 日本碍子株式会社 | 積層体、耐蝕性部材および耐ハロゲンガスプラズマ用部材 |
US7966969B2 (en) | 2004-09-22 | 2011-06-28 | Asm International N.V. | Deposition of TiN films in a batch reactor |
US7674726B2 (en) | 2004-10-15 | 2010-03-09 | Asm International N.V. | Parts for deposition reactors |
JP4711403B2 (ja) * | 2005-07-26 | 2011-06-29 | 本田技研工業株式会社 | 鋼製ばね部材及びその製造方法 |
JP4866658B2 (ja) * | 2006-05-23 | 2012-02-01 | 東京エレクトロン株式会社 | 半導体製造装置 |
JP5008957B2 (ja) * | 2006-11-30 | 2012-08-22 | 東京エレクトロン株式会社 | シリコン窒化膜の形成方法、形成装置、形成装置の処理方法及びプログラム |
JP4918453B2 (ja) * | 2007-10-11 | 2012-04-18 | 東京エレクトロン株式会社 | ガス供給装置及び薄膜形成装置 |
JP5158068B2 (ja) * | 2009-02-20 | 2013-03-06 | 東京エレクトロン株式会社 | 縦型熱処理装置及び熱処理方法 |
JP2010280945A (ja) | 2009-06-04 | 2010-12-16 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
US8895457B2 (en) * | 2010-03-08 | 2014-11-25 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device and substrate processing apparatus |
JP5687715B2 (ja) | 2010-12-27 | 2015-03-18 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
JP6042160B2 (ja) | 2012-10-03 | 2016-12-14 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
JP6026351B2 (ja) * | 2013-04-26 | 2016-11-16 | 東京エレクトロン株式会社 | 成膜装置のクリーニング方法および成膜装置 |
JP2015103652A (ja) | 2013-11-25 | 2015-06-04 | シャープ株式会社 | 気相成長装置 |
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- 2020-06-22 US US16/908,716 patent/US11702737B2/en active Active
- 2020-06-23 JP JP2020107729A patent/JP6967118B2/ja active Active
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JP2021017651A (ja) | 2021-02-15 |
KR20210009154A (ko) | 2021-01-26 |
TW202103814A (zh) | 2021-02-01 |
KR102227909B1 (ko) | 2021-03-16 |
TWI747329B (zh) | 2021-11-21 |
US11702737B2 (en) | 2023-07-18 |
US20210017644A1 (en) | 2021-01-21 |
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