JP6963967B2 - パターン描画方法、フォトマスクの製造方法、及び表示装置用デバイスの製造方法 - Google Patents

パターン描画方法、フォトマスクの製造方法、及び表示装置用デバイスの製造方法 Download PDF

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JP6963967B2
JP6963967B2 JP2017208867A JP2017208867A JP6963967B2 JP 6963967 B2 JP6963967 B2 JP 6963967B2 JP 2017208867 A JP2017208867 A JP 2017208867A JP 2017208867 A JP2017208867 A JP 2017208867A JP 6963967 B2 JP6963967 B2 JP 6963967B2
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Japan
Prior art keywords
pattern
photomask
error
exposure
manufacturing
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JP2017208867A
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Japanese (ja)
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JP2019082520A (ja
Inventor
三千彦 早瀬
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Hoya Corp
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Hoya Corp
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Priority to JP2017208867A priority Critical patent/JP6963967B2/ja
Priority to TW107131851A priority patent/TWI698703B/zh
Priority to KR1020180126638A priority patent/KR102225409B1/ko
Priority to CN201811274621.3A priority patent/CN109725487B/zh
Publication of JP2019082520A publication Critical patent/JP2019082520A/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2017208867A 2017-10-30 2017-10-30 パターン描画方法、フォトマスクの製造方法、及び表示装置用デバイスの製造方法 Active JP6963967B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017208867A JP6963967B2 (ja) 2017-10-30 2017-10-30 パターン描画方法、フォトマスクの製造方法、及び表示装置用デバイスの製造方法
TW107131851A TWI698703B (zh) 2017-10-30 2018-09-11 圖案描繪方法、光罩之製造方法及顯示裝置用元件之製造方法
KR1020180126638A KR102225409B1 (ko) 2017-10-30 2018-10-23 패턴 묘화 방법, 포토마스크의 제조 방법, 및 표시 장치용 디바이스의 제조 방법
CN201811274621.3A CN109725487B (zh) 2017-10-30 2018-10-30 图案描绘方法、光掩模和显示装置用器件的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017208867A JP6963967B2 (ja) 2017-10-30 2017-10-30 パターン描画方法、フォトマスクの製造方法、及び表示装置用デバイスの製造方法

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JP2019082520A JP2019082520A (ja) 2019-05-30
JP6963967B2 true JP6963967B2 (ja) 2021-11-10

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JP (1) JP6963967B2 (ko)
KR (1) KR102225409B1 (ko)
CN (1) CN109725487B (ko)
TW (1) TWI698703B (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102674578B1 (ko) * 2019-08-06 2024-06-12 삼성디스플레이 주식회사 포토 레지스트 패턴의 임계 치수 검사 방법

Family Cites Families (25)

* Cited by examiner, † Cited by third party
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JPS5254068Y2 (ko) 1972-06-26 1977-12-07
JPH10229038A (ja) * 1997-02-14 1998-08-25 Nikon Corp 露光量制御方法
JPH10284608A (ja) * 1997-04-02 1998-10-23 Matsushita Electric Ind Co Ltd Ｌｓｉ用パターンのレイアウト作成方法及びｌｓｉ用パターンの形成方法
JP3340387B2 (ja) * 1998-05-29 2002-11-05 株式会社日立製作所 電子線描画装置
SE517345C2 (sv) * 1999-01-18 2002-05-28 Micronic Laser Systems Ab Metod och system för tillverkande av stora skärmpaneler med förbättrad precision
JP2002116531A (ja) * 2000-10-11 2002-04-19 Hitachi Ltd マスクの製造方法
SE0104238D0 (sv) * 2001-12-14 2001-12-14 Micronic Laser Systems Ab Method and apparatus for patterning a workpiece
JP4192618B2 (ja) * 2003-02-17 2008-12-10 ソニー株式会社 マスクの補正方法
JP2005221596A (ja) * 2004-02-04 2005-08-18 Dainippon Screen Mfg Co Ltd パターン描画装置
JP5254068B2 (ja) * 2009-02-05 2013-08-07 株式会社エスケーエレクトロニクス カラーフィルタ用フォトマスクの補正方法
JP5699419B2 (ja) * 2009-05-14 2015-04-08 株式会社ニコン 露光方法及び露光装置並びにデバイス製造方法
KR20100127666A (ko) * 2009-05-26 2010-12-06 주식회사 하이닉스반도체 포토마스크의 선폭 균일도 보정 방법
JP5437124B2 (ja) * 2010-03-18 2014-03-12 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法および荷電粒子ビーム描画装置
JP5525902B2 (ja) * 2010-04-20 2014-06-18 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
WO2014063719A1 (en) * 2012-10-27 2014-05-01 Carl Zeiss Smt Gmbh Illumination system of a microliteographic projection exposure apparatus
JP6176947B2 (ja) * 2013-03-05 2017-08-09 株式会社エスケーエレクトロニクス フォトマスクの多重描画方法及びこれを用いて製造されたフォトマスク
JP6522277B2 (ja) * 2013-11-19 2019-05-29 Hoya株式会社 フォトマスク、フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
JP6189242B2 (ja) * 2014-03-28 2017-08-30 Hoya株式会社 フォトマスクの製造方法、フォトマスク及び表示装置の製造方法
KR102247563B1 (ko) * 2014-06-12 2021-05-03 삼성전자 주식회사 전자빔을 이용한 노광 방법과 그 노광 방법을 이용한 마스크 및 반도체 소자 제조방법
JP6453072B2 (ja) * 2014-12-22 2019-01-16 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6559433B2 (ja) * 2015-02-17 2019-08-14 Hoya株式会社 フォトマスクの製造方法、描画装置、フォトマスクの検査方法、フォトマスクの検査装置、及び表示装置の製造方法
JP6493049B2 (ja) * 2015-07-16 2019-04-03 株式会社ニューフレアテクノロジー 描画データ作成方法及び荷電粒子ビーム描画装置
JP6586835B2 (ja) * 2015-09-14 2019-10-09 ウシオ電機株式会社 プロキシミティ露光装置およびプロキシミティ露光方法
JP6726553B2 (ja) * 2015-09-26 2020-07-22 Hoya株式会社 フォトマスクの製造方法、及び表示装置の製造方法
TWI680347B (zh) * 2015-12-29 2019-12-21 日商Ｈｏｙａ股份有限公司 光罩基板、光罩基底、光罩、光罩基板之製造方法、光罩之製造方法、及顯示裝置之製造方法

Also Published As

Publication number Publication date
CN109725487A (zh) 2019-05-07
KR20190049477A (ko) 2019-05-09
KR102225409B1 (ko) 2021-03-08
JP2019082520A (ja) 2019-05-30
TW201932977A (zh) 2019-08-16
TWI698703B (zh) 2020-07-11
CN109725487B (zh) 2022-08-09

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