JP6956326B2 - High frequency heating device - Google Patents

High frequency heating device Download PDF

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JP6956326B2
JP6956326B2 JP2018525054A JP2018525054A JP6956326B2 JP 6956326 B2 JP6956326 B2 JP 6956326B2 JP 2018525054 A JP2018525054 A JP 2018525054A JP 2018525054 A JP2018525054 A JP 2018525054A JP 6956326 B2 JP6956326 B2 JP 6956326B2
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frequency
surface wave
wave exciter
frequency power
heated
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JPWO2018003546A1 (en
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岡島 利幸
大森 義治
吉野 浩二
宇野 博之
上島 博幸
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Panasonic Intellectual Property Management Co Ltd
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00Heating by electric, magnetic or electromagnetic fields
    • H05B6/64Heating using microwaves
    • H05B6/70Feed lines
    • H05B6/707Feed lines using waveguides

Description

本発明は、周期構造体を用いた表面波励振体を備える高周波加熱装置に関する。 The present invention relates to a high frequency heating device including a surface wave exciter using a periodic structure.

従来、周期構造体を用いた表面波励振体に高周波電力を給電して、食品などの被加熱物に加熱処理を施す高周波加熱装置に関する技術が開示されている(例えば、特許文献1参照)。 Conventionally, a technique relating to a high-frequency heating device that supplies high-frequency electric power to a surface wave exciter using a periodic structure to heat an object to be heated such as food has been disclosed (see, for example, Patent Document 1).

特許文献1の高周波加熱装置は、交叉指型テープ線路(表面波線路)の終端部のインピーダンスを時間的に変化させるインピーダンス可変部を備える。インピーダンス可変部は、定在波分布を時間的に変化させて、強いエネルギの放射を行なう部分を移動させる。これにより、食品全体を効率良く加熱する。 The high-frequency heating device of Patent Document 1 includes an impedance variable portion that temporally changes the impedance of the terminal portion of the cross-finger type tape line (surface wave line). The impedance variable portion changes the standing wave distribution with time to move the portion that emits strong energy. As a result, the entire food is efficiently heated.

つまり、上記高周波加熱装置は、交叉指型テープ線路(表面波線路)の終端部のインピーダンスの変化により、交叉指型テープ線路(表面波線路)の定在波分布を変化させて、終端部のインピーダンスを時間的に変化させる。これにより、定在波分布を時間的に変化させて、食品全体を加熱している。 That is, the high-frequency heating device changes the standing wave distribution of the cross-finger tape line (surface wave line) by changing the impedance of the end of the cross-finger tape line (surface wave line), and changes the standing wave distribution of the end. Change the impedance over time. As a result, the standing wave distribution is changed over time to heat the entire food.

しかしながら、従来の高周波加熱装置は、被加熱物の厚み方向に対する高周波電力の放射分布を、変化させることができない。 However, the conventional high-frequency heating device cannot change the radiation distribution of high-frequency power in the thickness direction of the object to be heated.

特開昭61−240589号公報Japanese Unexamined Patent Publication No. 61-240589

本発明は、被加熱物への高周波電力の放射分布を変化させて、被加熱部の加熱状態を変えることができる高周波加熱装置を提供する。 The present invention provides a high-frequency heating device capable of changing the heating state of the heated portion by changing the radiation distribution of high-frequency power to the object to be heated.

つまり、本発明の高周波加熱装置は、高周波電力を発生させる高周波電力発生部と、高
周波電力を表面波で伝播して被加熱物を加熱する表面波励振体と、高周波電力を表面波励振体に供給する高周波電力供給部と、被加熱物を設置する設置台を備える。高周波電力発生部は、所望される表面波励振体近傍の高周波電力の表面集中度に応じて、表面波励振体に供給する高周波電力の周波数と表面波励振体の励振周波数との大小関係を選定して前記表面波励振体に供給する前記高周波電力の周波数を設定して、被加熱物を加熱処理する。
That is, the high-frequency heating device of the present invention uses a high-frequency power generator that generates high-frequency power, a surface wave exciter that propagates high-frequency power by surface waves to heat an object to be heated, and a surface wave exciter that uses high-frequency power as a surface wave exciter. It is equipped with a high-frequency power supply unit to be supplied and an installation stand on which an object to be heated is installed. The high-frequency power generator selects the magnitude relationship between the frequency of the high-frequency power supplied to the surface wave exciter and the excitation frequency of the surface wave exciter according to the surface concentration of the high-frequency power near the desired surface wave exciter. Then, the frequency of the high frequency power supplied to the surface wave exciter is set, and the object to be heated is heat-treated.

この構成によれば、被加熱物の厚み方向において、所望される加熱状態に応じて、表面波励振体に供給する高周波電力の周波数と、表面波励振体の励振周波数との大小関係を設定する。これにより、被加熱物の厚み方向において、所望の加熱状態で被加熱物を加熱処理できる。 According to this configuration, the magnitude relationship between the frequency of the high-frequency power supplied to the surface wave exciter and the excitation frequency of the surface wave exciter is set according to the desired heating state in the thickness direction of the object to be heated. .. Thereby, the object to be heated can be heat-treated in a desired heating state in the thickness direction of the object to be heated.

図1は、本実施の形態の高周波加熱装置の基本構成を示すブロック図である。FIG. 1 is a block diagram showing a basic configuration of the high-frequency heating device of the present embodiment. 図2は、同高周波加熱装置の高周波電力供給部の構成を示すブロック図である。FIG. 2 is a block diagram showing a configuration of a high-frequency power supply unit of the high-frequency heating device. 図3Aは、同高周波加熱装置の表面波励振体による電界の表面集中度が高い場合における、被加熱物の加熱動作の一例を示す図である。FIG. 3A is a diagram showing an example of a heating operation of the object to be heated when the surface concentration of the electric field by the surface wave exciter of the high frequency heating device is high. 図3Bは、同高周波加熱装置の表面波励振体による電界の表面集中度が低い場合における、被加熱物の加熱動作の一例を示す図である。FIG. 3B is a diagram showing an example of a heating operation of the object to be heated when the surface concentration of the electric field by the surface wave exciter of the high frequency heating device is low. 図4Aは、同高周波加熱装置の高周波電力の周波数と表面波励振体の励振周波数とが等しい場合における、表面波励振体からの距離に対する電界の表面集中度の変化の一例を示すグラフである。FIG. 4A is a graph showing an example of a change in the surface concentration of the electric field with respect to the distance from the surface wave exciter when the frequency of the high frequency power of the high frequency heating device and the excitation frequency of the surface wave exciter are equal. 図4Bは、同高周波加熱装置の高周波電力の周波数が表面波励振体の励振周波数より低い場合における、表面波励振体からの距離に対する電界の表面集中度の変化の一例を示すグラフである。FIG. 4B is a graph showing an example of a change in the surface concentration of the electric field with respect to the distance from the surface wave exciter when the frequency of the high frequency power of the high frequency heating device is lower than the excitation frequency of the surface wave exciter. 図4Cは、同高周波加熱装置の高周波電力の周波数が表面波励振体の励振周波数より高い場合における、表面波励振体からの距離に対する電界の表面集中度の変化の一例を示すグラフである。FIG. 4C is a graph showing an example of a change in the surface concentration of the electric field with respect to the distance from the surface wave exciter when the frequency of the high frequency power of the high frequency heating device is higher than the excitation frequency of the surface wave exciter.

以下、本発明の実施の形態について、図面を参照しながら説明する。なお、この実施の形態によって本発明が限定されるものではない。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. The present invention is not limited to this embodiment.

(実施の形態)
以下、本実施の形態に係る高周波加熱装置100について、図1を用いて説明する。
(Embodiment)
Hereinafter, the high frequency heating device 100 according to the present embodiment will be described with reference to FIG.

図1は、本実施の形態の高周波加熱装置100の基本構成を示すブロック図である。 FIG. 1 is a block diagram showing a basic configuration of the high frequency heating device 100 of the present embodiment.

図1に示すように、高周波加熱装置100は、表面波励振体103と、高周波電力供給部110と、高周波電力発生部120と、被加熱物102を載置する設置台101などを備える。高周波加熱装置100は、設置台101に設置された被加熱物102を加熱処理する。 As shown in FIG. 1, the high-frequency heating device 100 includes a surface wave exciter 103, a high-frequency power supply unit 110, a high-frequency power generation unit 120, an installation table 101 on which an object to be heated 102 is placed, and the like. The high-frequency heating device 100 heat-treats the object to be heated 102 installed on the installation table 101.

このとき、高周波加熱装置100は、高周波電力発生部120で発生される高周波電力の周波数、および表面波励振体103の有する励振周波数は、互いに予め意図された周波数の関係となるように設定される。意図された周波数の関係は、被加熱物102に所望の加熱状態で加熱処理されるように設定される。 At this time, the high-frequency heating device 100 is set so that the frequency of the high-frequency power generated by the high-frequency power generation unit 120 and the excitation frequency of the surface wave exciter 103 have a relationship of frequencies intended in advance with each other. .. The intended frequency relationship is set so that the object to be heated 102 is heat-treated in a desired heating state.

なお、図1に示す高周波加熱装置100は、それぞれ1つの表面波励振体と高周波電力供給部と高周波電力発生部を有する構成を例に図示しているが、これに限られない。表面波励振体、高周波電力供給部および高周波電力発生部の数は、上記の数に限定されない。 The high-frequency heating device 100 shown in FIG. 1 is illustrated by taking as an example a configuration having one surface wave exciter, a high-frequency power supply unit, and a high-frequency power generation unit, but the present invention is not limited to this. The number of surface wave exciters, high-frequency power supply units, and high-frequency power generation units is not limited to the above numbers.

そして、高周波加熱装置100は、以下のように動作する。 Then, the high frequency heating device 100 operates as follows.

まず、高周波電力発生部120は、高周波電力を発生させる。発生された高周波電力は、高周波電力供給部110を介して、表面波励振体103へ供給される。供給された高周波電力は、表面波励振体103の近傍を表面波で伝播、もしくは放射される。これにより、設置台101に載置された被加熱物102が加熱される。 First, the high-frequency power generation unit 120 generates high-frequency power. The generated high-frequency power is supplied to the surface wave exciter 103 via the high-frequency power supply unit 110. The supplied high-frequency power is propagated or radiated by the surface wave in the vicinity of the surface wave exciter 103. As a result, the object to be heated 102 placed on the installation table 101 is heated.

以上のように、本実施の形態の高周波加熱装置100は構成され、動作する。 As described above, the high frequency heating device 100 of the present embodiment is configured and operates.

上記高周波電力発生部120は、被加熱物102の加熱処理に適した周波数(例えば、マイクロ波)とパワーの高周波電力を出力する高周波発信器で構成される。 The high-frequency power generation unit 120 is composed of a high-frequency transmitter that outputs high-frequency power having a frequency (for example, microwave) and power suitable for heat treatment of the object to be heated 102.

具体的には、高周波発信器は、例えばマグネトロンとインバータ電源回路や、固体発振器と電力増幅器などで構成される。 Specifically, the high-frequency transmitter is composed of, for example, a magnetron and an inverter power supply circuit, a solid-state oscillator and a power amplifier, and the like.

マグネトロンは、電波の一種である強力なノンコヒーレントのマイクロ波を発生する発振用真空管の一種で、レーダーや電子レンジなどの数百ワット〜数キロワットの高出力用途に多く使われる。マグネトロンの駆動には、数キロボルトの高電圧が必要となる。そのため、マグネトロンの駆動電源として、一般的に、インバータ電源回路が用いられる。インバータ電源回路は、整流機能を有するコンバータ回路と、昇圧(もしくは降圧)機能と出力周波数変換機能を有するインバータ回路で構成される。なお、インバータ電源回路は、照明装置やモータ制御に広く用いられる技術である。 A magnetron is a type of oscillating vacuum tube that generates powerful non-coherent microwaves, which is a type of radio wave, and is often used in high-power applications of hundreds to several kilowatts such as radars and microwave ovens. A high voltage of several kilovolts is required to drive the magnetron. Therefore, an inverter power supply circuit is generally used as a drive power source for the magnetron. The inverter power supply circuit is composed of a converter circuit having a rectifying function and an inverter circuit having a step-up (or step-down) function and an output frequency conversion function. The inverter power supply circuit is a technology widely used for lighting devices and motor control.

一方、固体発振器は、トランジスタと、コンデンサ、インダクタ、抵抗器などの高周波用電子部品を有する帰還回路を備える半導体発振回路で構成される。なお、固体発振器は、通信機器などの小電力出力用途の発振器に広く用いられる技術である。 On the other hand, a solid-state oscillator is composed of a transistor and a semiconductor oscillator circuit including a feedback circuit having high-frequency electronic components such as a capacitor, an inductor, and a resistor. The solid-state oscillator is a technology widely used for oscillators for low power output applications such as communication equipment.

固体発振器は、近年、50ワット程度の高周波電力を出力する発振器もあるが、一般的には数十ミリワット〜数百ミリワット程度の高周波電力を出力する発振器である。そのため、数百ワットの出力パワーが必要な加熱処理の用途には使用できない。そこで、通常、固体発振器は、出力された高周波電力を増幅するトランジスタなどで構成される電力増幅器とともに使用される。 In recent years, solid-state oscillators include oscillators that output high-frequency power of about 50 watts, but generally are oscillators that output high-frequency power of about several tens of milliwatts to several hundreds of milliwatts. Therefore, it cannot be used for heat treatment applications that require an output power of several hundred watts. Therefore, a solid-state oscillator is usually used together with a power amplifier composed of a transistor or the like that amplifies the output high-frequency power.

高周波電力供給部110は、高周波電力発生部120で発生された高周波電力を、表面波励振体103に給電する電力接続部に相当する。なお、高周波電力供給部110の構成については、後述する。 The high-frequency power supply unit 110 corresponds to a power connection unit that supplies high-frequency power generated by the high-frequency power generation unit 120 to the surface wave exciter 103. The configuration of the high-frequency power supply unit 110 will be described later.

表面波励振体103は、金属板で周期的にインピーダンス素子を配列した金属周期構造体や、誘電体板などで構成される。金属周期構造体の場合、例えばスタブ型表面波励振体や、インターデジタル型表面波励振体が用いられる。スタブ型表面波励振体は、図1に示すような金属平板上に、複数の金属平板を一定間隔で、被加熱物に向けて立てる方向に並べて形成される。インターデジタル型表面波励振体は、金属平板を交叉指状に打ち抜いて形成される。誘電体板は、アルミナ板やベークライト板が用いられる。 The surface wave exciter 103 is composed of a metal periodic structure in which impedance elements are periodically arranged on a metal plate, a dielectric plate, and the like. In the case of a metal periodic structure, for example, a stub type surface wave exciter or an interdigital type surface wave exciter is used. The stub-type surface wave exciter is formed on a metal flat plate as shown in FIG. 1 by arranging a plurality of metal flat plates at regular intervals in a direction in which they stand toward an object to be heated. The interdigital surface wave exciter is formed by punching a metal flat plate in a cross-finger shape. As the dielectric plate, an alumina plate or a bakelite plate is used.

このとき、表面波励振体103の励振周波数は、使用する材料や物理的な構造寸法などにより決まる。例えば、スタブ型表面波励振体の場合、金属平板上に並べられた複数の金属平板の高さ寸法や、金属平板の間隔寸法などを変化させることにより、表面波励振体103の励振周波数を変化させることができる。通常、表面波励振体103の励振周波数は、金属平板の高さ寸法を低くするほど高くなり、金属平板の間隔寸法を小さくするほど高くなる。そのため、金属平板の高さや間隔の調整により、所望の励振周波数を有する表面波励振体103を形成できる。 At this time, the excitation frequency of the surface wave exciter 103 is determined by the material used, the physical structural dimensions, and the like. For example, in the case of a stub type surface wave exciter, the excitation frequency of the surface wave exciter 103 is changed by changing the height dimension of a plurality of metal flat plates arranged on the metal flat plate, the spacing dimension of the metal flat plates, and the like. Can be made to. Normally, the excitation frequency of the surface wave exciter 103 increases as the height dimension of the metal flat plate is lowered, and becomes higher as the space dimension of the metal flat plate is reduced. Therefore, the surface wave exciter 103 having a desired excitation frequency can be formed by adjusting the height and spacing of the metal flat plates.

また、表面波励振体103は、表面近傍に、高周波電力供給部110を介して高周波電力発生部120から供給される高周波電力を集中させて、表面波で伝播させる。さらに、表面波励振体103は、高周波電力を、例えば高周波加熱装置100内の空間に放射させることもできる。これにより、表面波励振体103の近傍の設置台101に載置された被加熱物102は、表面波励振体103の表面近傍を表面波で伝播、もしくは表面波励振体103から放射される高周波電力によって、加熱される。 Further, the surface wave exciter 103 concentrates the high frequency power supplied from the high frequency power generation unit 120 via the high frequency power supply unit 110 in the vicinity of the surface and propagates it by the surface wave. Further, the surface wave exciter 103 can also radiate high frequency power into, for example, the space inside the high frequency heating device 100. As a result, the object to be heated 102 placed on the installation table 101 in the vicinity of the surface wave exciter 103 propagates in the vicinity of the surface of the surface wave exciter 103 with a surface wave, or has a high frequency radiated from the surface wave exciter 103. It is heated by electric power.

つぎに、本実施の形態の高周波電力供給部110の構成について、図2を用いて説明する。 Next, the configuration of the high-frequency power supply unit 110 of the present embodiment will be described with reference to FIG.

図2は、高周波電力供給部110の構成の一例を示すブロック図である。 FIG. 2 is a block diagram showing an example of the configuration of the high frequency power supply unit 110.

高周波電力供給部110は、図2に示すように、高周波電力発生部120で発生される高周波電力を、方形導波管130を介して、高周波電力供給部110へ導くように配置される。 As shown in FIG. 2, the high-frequency power supply unit 110 is arranged so as to guide the high-frequency power generated by the high-frequency power generation unit 120 to the high-frequency power supply unit 110 via the rectangular waveguide 130.

方形導波管130は、主にマイクロ波などの電磁波の伝送に用いられる中空導波管で構成される。中空導波管は、一般的な導波管で、断面形状が方形(例えば、長方形)である金属製の管で形成される。電磁波は、方形導波管130の形状や寸法、波長もしくは周波数に応じた電磁界を形成しながら、方形導波管130の中を伝播する。 The square waveguide 130 is composed of a hollow waveguide mainly used for transmitting electromagnetic waves such as microwaves. The hollow waveguide is a general waveguide, and is formed of a metal tube having a rectangular (for example, rectangular) cross-sectional shape. The electromagnetic wave propagates in the rectangular waveguide 130 while forming an electromagnetic field according to the shape, size, wavelength or frequency of the rectangular waveguide 130.

そして、高周波電力発生部120から伝播された高周波電力は、方形導波管130およびテーパ形状の方形導波管131を経由して、表面波励振体103に供給される。テーパ形状の方形導波管131は、伝播するマイクロ波の接合部での反射を抑制して、損失を小さくする。 Then, the high-frequency power propagated from the high-frequency power generation unit 120 is supplied to the surface wave exciter 103 via the rectangular waveguide 130 and the tapered rectangular waveguide 131. The tapered rectangular waveguide 131 suppresses reflection of propagating microwaves at the junction to reduce loss.

つまり、高周波電力供給部110は、図2の破線で示すように、方形導波管130の一部と、テーパ形状の方形導波管131と、表面波励振体103の一部とで構成される。 That is, as shown by the broken line in FIG. 2, the high-frequency power supply unit 110 includes a part of the square waveguide 130, a tapered square waveguide 131, and a part of the surface wave exciter 103. NS.

これにより、高周波電力発生部120で発生される高周波電力は、方形導波管130を介して、高周波電力供給部110へ導かれ、テーパ形状の方形導波管131を介して、表面波励振体103へ効率よく供給される。 As a result, the high-frequency power generated by the high-frequency power generation unit 120 is guided to the high-frequency power supply unit 110 via the square waveguide 130, and the surface wave exciter via the tapered square waveguide 131. It is efficiently supplied to 103.

このとき、本実施の形態の高周波加熱装置100は、高周波電力発生部120で発生される高周波電力の周波数と、表面波励振体103の有する励振周波数を、互いに予め意図された周波数の関係となるように設定される。これにより、後述するように、被加熱物102が所望の加熱状態で加熱処理される。 At this time, in the high-frequency heating device 100 of the present embodiment, the frequency of the high-frequency power generated by the high-frequency power generation unit 120 and the excitation frequency of the surface wave exciter 103 have a relationship of frequencies intended in advance with each other. Is set. As a result, as will be described later, the object to be heated 102 is heat-treated in a desired heating state.

以上のように、本実施の形態の高周波加熱装置100は構成され、被加熱物102などが加熱処理される。 As described above, the high-frequency heating device 100 of the present embodiment is configured, and the object to be heated 102 and the like are heat-treated.

つぎに、上述の高周波加熱装置100の、被加熱物102を加熱処理する動作について、図3Aおよび図3Bを用いて、説明する。 Next, the operation of heat-treating the object to be heated 102 of the high-frequency heating device 100 described above will be described with reference to FIGS. 3A and 3B.

図3Aおよび図3Bは、設置台101に被加熱物102を設置した状態において、供給される高周波電力による表面波励振体103の表面付近の電界強度分布で、被加熱物102を加熱する動作の一例を模式的に示す。 3A and 3B show an operation of heating the object to be heated 102 with an electric field strength distribution near the surface of the surface wave exciter 103 by the supplied high frequency power in a state where the object to be heated 102 is installed on the installation table 101. An example is schematically shown.

つまり、図3Aは、高周波電力の表面集中度が高くなるように、高周波電力発生部120で発生される高周波電力の周波数と表面波励振体103の励振周波数を設定した場合における、表面波励振体103の表面近傍に形成される電界強度分布141を示す。 That is, FIG. 3A shows a surface wave exciter when the frequency of the high frequency power generated by the high frequency power generating unit 120 and the excitation frequency of the surface wave exciter 103 are set so that the surface concentration of the high frequency power becomes high. The electric field strength distribution 141 formed near the surface of 103 is shown.

図3Bは、高周波電力の表面集中度が低くなるように、高周波電力の周波数と励振周波数を設定した場合における、表面波励振体103の表面近傍に形成される電界強度分布142を示す。 FIG. 3B shows an electric field strength distribution 142 formed in the vicinity of the surface of the surface wave exciter 103 when the frequency of the high frequency power and the excitation frequency are set so that the surface concentration of the high frequency power is low.

なお、図3Aおよび図3Bは、電界強度分布141および142の電界の強度を、色の濃淡で表している。この場合、色が濃いほど電界が強いことを示す。 In addition, in FIG. 3A and FIG. 3B, the electric field strength of the electric field strength distributions 141 and 142 is represented by the shade of color. In this case, the darker the color, the stronger the electric field.

図3Aの場合、高周波電力の周波数と表面波励振体103の励振周波数との関係を、表面波励振体103の近傍で高周波電力の表面集中度が高くなるように設定している。そのため、表面波励振体103の表面近傍の電界強度が強くなる。これにより、被加熱物102は、表面波励振体103に近い側の面および近い側の内部が集中的に強く加熱される。そして、表面波励振体103から遠のくにつれて、急激に電界強度は弱くなる。そのため、被加熱物102の加熱の度合いも弱くなる。 In the case of FIG. 3A, the relationship between the frequency of the high frequency power and the excitation frequency of the surface wave exciter 103 is set so that the surface concentration of the high frequency power becomes high in the vicinity of the surface wave exciter 103. Therefore, the electric field strength near the surface of the surface wave exciter 103 becomes stronger. As a result, the surface of the object to be heated 102 on the side close to the surface wave exciter 103 and the inside on the side close to the surface wave exciter 103 are intensively and strongly heated. Then, as the distance from the surface wave exciter 103 increases, the electric field strength sharply weakens. Therefore, the degree of heating of the object to be heated 102 is also weakened.

一方、図3Bの場合、高周波電力の周波数と表面波励振体103の励振周波数との関係を、表面波励振体103の近傍で高周波電力の表面集中度が低くなるように設定している。この場合、表面波励振体103の表面近傍の電界強度は弱くなるが、表面波励振体103から離れても電界強度の低下が小さい。そのため、被加熱物102は、表面波励振体103に接する側の面が集中的に強く加熱されることは無い。つまり、被加熱物102は、全体が比較的万遍なく加熱される。 On the other hand, in the case of FIG. 3B, the relationship between the frequency of the high frequency power and the excitation frequency of the surface wave exciter 103 is set so that the surface concentration of the high frequency power becomes low in the vicinity of the surface wave exciter 103. In this case, the electric field strength in the vicinity of the surface of the surface wave exciter 103 is weakened, but the decrease in the electric field strength is small even when the surface wave exciter 103 is separated from the surface. Therefore, the surface of the object to be heated 102 on the side in contact with the surface wave exciter 103 is not intensively and strongly heated. That is, the entire object 102 to be heated is heated relatively evenly.

以上のように、高周波加熱装置100は、高周波電力の周波数と表面波励振体103の励振周波数との関係に基づいて、被加熱物102の加熱処理動作が実行される。 As described above, the high-frequency heating device 100 executes the heat treatment operation of the object to be heated 102 based on the relationship between the frequency of the high-frequency power and the excitation frequency of the surface wave exciter 103.

以下に、上述した高周波電力の周波数と表面波励振体103の励振周波数との大小関係により、表面波励振体103の表面からの距離と電界強度との関係について、図3Aおよび図3Bを参照しながら、図4Aから図4Cを用いて、説明する。 Hereinafter, with reference to FIGS. 3A and 3B, the relationship between the distance from the surface of the surface wave exciter 103 and the electric field strength based on the magnitude relationship between the frequency of the high frequency power and the excitation frequency of the surface wave exciter 103 described above. However, it will be described with reference to FIGS. 4A to 4C.

図4Aから図4Cは、表面波励振体103に供給する高周波電力の周波数fpと、表面波励振体103の励振周波数fcとの関係による、表面波励振体103の表面近傍に形成される高周波電力(電界)の表面集中度の変化の一例を模式的に示す。 4A to 4C show high-frequency power formed in the vicinity of the surface of the surface wave exciter 103 due to the relationship between the frequency fp of the high-frequency power supplied to the surface wave exciter 103 and the excitation frequency fc of the surface wave exciter 103. An example of the change in the surface concentration of (electric field) is schematically shown.

詳細には、図4Aから図4Cは、表面波励振体103に供給する高周波電力の周波数fpと、表面波励振体103の励振周波数fcとの関係における、表面波励振体103の表面からの距離に対する電界強度の大きさの変化をグラフで示す。このとき、図4Aから図4Cの横軸は表面波励振体の表面からの距離、縦軸は電界強度の大きさを示す。なお、図中において、グラフの傾斜が大きいほど表面波励振体103の表面に電界が集中していることを意味する。 Specifically, FIGS. 4A to 4C show the distance from the surface of the surface wave exciter 103 in the relationship between the frequency fp of the high frequency power supplied to the surface wave exciter 103 and the excitation frequency fc of the surface wave exciter 103. The change in the magnitude of the electric field strength with respect to is shown in a graph. At this time, the horizontal axis of FIGS. 4A to 4C indicates the distance from the surface of the surface wave exciter, and the vertical axis indicates the magnitude of the electric field strength. In the figure, the larger the slope of the graph, the more the electric field is concentrated on the surface of the surface wave exciter 103.

図4Aは、表面波励振体103に供給する高周波電力の周波数fpが表面波励振体103の励振周波数fcとほぼ等しい時の、表面波励振体103の表面からの距離に対する電界強度の大きさをグラフ151で示す。図4Bは、高周波電力の周波数fpが励振周波数fcよりも低い時の、電界強度の大きさをグラフ152で示す。さらに、図4Cは、高周波電力の周波数fpが励振周波数fcよりも高い時の、電界強度の大きさをグラフ153で示す。 FIG. 4A shows the magnitude of the electric field strength with respect to the distance from the surface of the surface wave exciter 103 when the frequency fp of the high frequency power supplied to the surface wave exciter 103 is substantially equal to the excitation frequency fc of the surface wave exciter 103. It is shown in graph 151. FIG. 4B is a graph 152 showing the magnitude of the electric field strength when the frequency fp of the high-frequency power is lower than the excitation frequency fc. Further, FIG. 4C is a graph 153 showing the magnitude of the electric field strength when the frequency fp of the high frequency power is higher than the excitation frequency fc.

まず、図4Aに示すように、高周波電力の周波数fpと、励振周波数fcとを、ほぼ等しい周波数に設定すると、表面波励振体103の表面からの距離に対する電界強度の大きさを示すグラフ151の傾斜が最も大きくなる。つまり、表面波励振体103の表面近傍に電界が強く集中する、図3Aに近似した状態となる。これにより、被加熱物102の表面が集中的に加熱される。そのため、上記周波数fpと励振周波数fcとの関係は、被加熱物102の表面に焦げ目を付ける場合に適している。 First, as shown in FIG. 4A, when the frequency fp of the high-frequency power and the excitation frequency fc are set to substantially the same frequency, the magnitude of the electric field strength with respect to the distance from the surface of the surface wave exciter 103 is shown in Graph 151. The slope is the largest. That is, the electric field is strongly concentrated near the surface of the surface wave exciter 103, which is similar to FIG. 3A. As a result, the surface of the object to be heated 102 is intensively heated. Therefore, the relationship between the frequency fp and the excitation frequency fc is suitable for browning the surface of the object to be heated 102.

また、図4Bに示すように、高周波電力の周波数fpを励振周波数fcよりも低い周波数に設定すると、グラフ152の傾斜が、図4Aのグラフ151の傾斜に比べて、緩やかになる。つまり、表面波励振体103の表面での電界の集中度が下がり、表面波励振体103の表面から高周波電力が届く距離が遠くなる。そのため、表面波励振体103の表面近傍の電界強度は比較的大きいが、表面波励振体103の表面から遠ざかっても急激な電界強度の低下は無い。つまり、表面波励振体103の表面から少し離れた所まで高周波電力が届く。そのため、上記周波数fpと励振周波数fcとの関係は、被加熱物102を焦げない程度に強く加熱する場合に適している。 Further, as shown in FIG. 4B, when the frequency fp of the high frequency power is set to a frequency lower than the excitation frequency fc, the inclination of the graph 152 becomes gentler than the inclination of the graph 151 of FIG. 4A. That is, the degree of concentration of the electric field on the surface of the surface wave exciter 103 decreases, and the distance that the high frequency power reaches from the surface of the surface wave exciter 103 becomes long. Therefore, although the electric field strength near the surface of the surface wave exciter 103 is relatively large, there is no sudden decrease in the electric field strength even when the surface wave exciter 103 is moved away from the surface. That is, the high frequency power reaches a place slightly away from the surface of the surface wave exciter 103. Therefore, the relationship between the frequency fp and the excitation frequency fc is suitable for heating the object to be heated 102 so strongly that it does not burn.

また、図4Cに示すように、高周波電力の周波数fpを励振周波数fcより高い周波数に設定すると、グラフ153の傾斜は殆どなくなり、フラットな電界強度分布になる。つまり、電界は表面波励振体103の表面近傍に集中せずに、全体に広がって分布する。これは、表面波励振体103に供給される高周波電力が、表面波励振体103を表面波で伝播することなく、空間へ放射されている状態を意味する。そのため、上記周波数fpと励振周波数fcとの関係は、被加熱物102全体を比較的万遍なく加熱する場合に適している。 Further, as shown in FIG. 4C, when the frequency fp of the high frequency power is set to a frequency higher than the excitation frequency fc, the inclination of the graph 153 is almost eliminated and the electric field strength distribution becomes flat. That is, the electric field does not concentrate near the surface of the surface wave exciter 103, but spreads and distributes over the entire surface. This means that the high-frequency power supplied to the surface wave exciter 103 is radiated into space without propagating the surface wave exciter 103 with the surface wave. Therefore, the relationship between the frequency fp and the excitation frequency fc is suitable for heating the entire object 102 to be heated relatively evenly.

上述したように、本実施の形態の高周波加熱装置100は、ユーザが所望する加熱状態に対応する表面波励振体103の表面近傍の高周波電力の表面集中度に応じて、表面波励振体103に供給する高周波電力の周波数fpと、表面波励振体103の励振周波数fcとの大小関係を設定する。これにより、表面波励振体103を表面波で伝播する高周波電力の伝播状態を変化させることができる。そして、表面波励振体103の表面近傍の電界強度分布が変化する。その結果、ユーザが所望する加熱状態で被加熱物102を加熱処理できる。 As described above, the high-frequency heating device 100 of the present embodiment is attached to the surface wave-exciting body 103 according to the surface concentration of high-frequency power in the vicinity of the surface of the surface wave-exciting body 103 corresponding to the heating state desired by the user. The magnitude relationship between the frequency fp of the high frequency power to be supplied and the excitation frequency fc of the surface wave exciter 103 is set. As a result, it is possible to change the propagation state of the high-frequency power propagating in the surface wave exciter 103 by the surface wave. Then, the electric field strength distribution near the surface of the surface wave exciter 103 changes. As a result, the object to be heated 102 can be heat-treated in the heating state desired by the user.

つまり、表面波励振体103に供給する高周波電力の周波数fpを、表面波励振体103の励振周波数fcに等しい、もしくは低くなるように、周波数fpと励振周波数fcの関係を設定する。この場合、表面波励振体103に供給される高周波電力は、表面波励振体103を表面波で伝播する。すなわち、高周波電力は、「表面波モード」による動作で、伝播する。このとき、表面波励振体103の励振周波数fcに対する高周波電力の周波数fpの低さ加減(差分)を調整すれば、表面波励振体103を表面波で伝播する高周波電力の表面集中度を調整できる。これにより、ユーザが所望する被加熱物の厚み方向に対する加熱状態に応じて、被加熱物102を、最適に加熱処理できる。 That is, the relationship between the frequency fp and the excitation frequency fc is set so that the frequency fp of the high frequency power supplied to the surface wave exciter 103 is equal to or lower than the excitation frequency fc of the surface wave exciter 103. In this case, the high frequency power supplied to the surface wave exciter 103 propagates on the surface wave exciter 103 as a surface wave. That is, the high frequency power propagates in the operation in the "surface wave mode". At this time, by adjusting the low adjustment (difference) of the frequency fp of the high frequency power with respect to the excitation frequency fc of the surface wave exciter 103, the surface concentration of the high frequency power propagating by the surface wave of the surface wave exciter 103 can be adjusted. .. As a result, the object to be heated 102 can be optimally heat-treated according to the heating state in the thickness direction of the object to be heated desired by the user.

一方、表面波励振体103に供給する高周波電力の周波数fpを、表面波励振体103の励振周波数fcよりも高くなるように、周波数fpと励振周波数fcの関係を設定する。この場合、表面波励振体103に供給される高周波電力は、表面波励振体103を表面波で伝播せずに空間へ放射される。すなわち、高周波電力は、「放射モード」による動作で放射される。そのため、被加熱物102の全体を比較的万遍なく加熱できる。 On the other hand, the relationship between the frequency fp and the excitation frequency fc is set so that the frequency fp of the high frequency power supplied to the surface wave exciter 103 is higher than the excitation frequency fc of the surface wave exciter 103. In this case, the high-frequency power supplied to the surface wave exciter 103 is radiated into space without propagating the surface wave exciter 103 with the surface wave. That is, the high frequency power is radiated by the operation in the "radiation mode". Therefore, the entire object to be heated 102 can be heated relatively evenly.

なお、上記実施の形態では、高周波加熱装置100の高周波電力発生部120を、固定の周波数fpで高周波電力を発生させる構成を例に説明したが、これに限られない。例えば、設定される周波数の高周波電力を発生するように、周波数可変の高周波発信器で、高周波電力発生部120を構成してもよい。 In the above embodiment, the configuration in which the high-frequency power generation unit 120 of the high-frequency heating device 100 generates high-frequency power at a fixed frequency fp has been described as an example, but the present invention is not limited to this. For example, the high-frequency power generator 120 may be configured with a high-frequency transmitter having a variable frequency so as to generate high-frequency power of a set frequency.

周波数可変の高周波発振器は、前述した半導体発振回路を構成する共振回路の共振周波数を決める素子に電圧可変素子(例えば、バラクターダイオードなど)を用いることで実現できる。周波数可変の高周波発振器は、一般的に、VCO(Voltage Controlled Oscillator)と呼ばれる。なお、VCOの技術は公知であるので、詳細な説明は省略する。この場合、高周波発振器に制御部を設け、VCOに、周波数に対応する電圧情報を供給する。これにより、高周波発振器の周波数を変更できる。 A frequency-variable high-frequency oscillator can be realized by using a voltage-variable element (for example, a ballactor diode) as an element for determining the resonance frequency of the resonance circuit constituting the semiconductor oscillation circuit described above. A high frequency oscillator with variable frequency is generally called a VCO (Voltage Control Oscillator). Since the VCO technology is known, detailed description thereof will be omitted. In this case, a control unit is provided in the high frequency oscillator, and voltage information corresponding to the frequency is supplied to the VCO. This makes it possible to change the frequency of the high frequency oscillator.

また、周波数可変の高周波発振器は、基準信号発生器と位相比較器を備えたPLL(Phase Locked Loop)発振器で構成してもよい。なお、PLL発振器の技術は公知であるので、詳細な説明は省略する。この場合、PLL発振器に制御部を設け、位相比較器に、周波数に対応する情報信号を供給する。これにより、PLL発振器の周波数を変更できる。 Further, the frequency-variable high-frequency oscillator may be configured by a PLL (Phase Locked Loop) oscillator including a reference signal generator and a phase comparator. Since the technology of the PLL oscillator is known, detailed description thereof will be omitted. In this case, a control unit is provided in the PLL oscillator, and an information signal corresponding to the frequency is supplied to the phase comparator. As a result, the frequency of the PLL oscillator can be changed.

これにより、1つの高周波電力発生部で複数の周波数の高周波電力を発生することができる。そのため、上述した、表面波励振体103へ供給する高周波電力の周波数fpと、表面波励振体103の励振周波数fcとの大小関係を、簡単で、自在に設定できる。すなわち、表面波励振体103に供給する高周波電力の周波数fpと、表面波励振体103の励振周波数fcとの大小関係を、自在に変化させることができる。これにより、簡単な構成で、ユーザが所望するように、被加熱物102の厚み方向に対する加熱状態を変化させて、被加熱物102を加熱処理できる。 As a result, one high-frequency power generating unit can generate high-frequency power of a plurality of frequencies. Therefore, the magnitude relationship between the frequency fp of the high-frequency power supplied to the surface wave exciter 103 and the excitation frequency fc of the surface wave exciter 103 described above can be easily and freely set. That is, the magnitude relationship between the frequency fp of the high-frequency power supplied to the surface wave exciter 103 and the excitation frequency fc of the surface wave exciter 103 can be freely changed. Thereby, with a simple configuration, the heated object 102 can be heat-treated by changing the heating state in the thickness direction of the object to be heated 102 as desired by the user.

また、本実施の形態の高周波加熱装置100は、表面波励振体103を、励振周波数を可変できる、励振周波数可変の表面波励振体で構成してもよい。 Further, in the high frequency heating device 100 of the present embodiment, the surface wave exciter 103 may be composed of a surface wave exciter with a variable excitation frequency capable of varying the excitation frequency.

具体的には、表面波励振体を、上述したスタブ型表面波励振体で形成する場合、金属平板上に一定間隔で並べられた金属平板と金属平板の間に、機械的な制御で誘電体を挿入する。これにより、表面波励振体の励振周波数を変化させることができる。 Specifically, when the surface wave exciter is formed by the above-mentioned stub type surface wave exciter, a dielectric material is mechanically controlled between the metal plates arranged at regular intervals on the metal flat plate. To insert. Thereby, the excitation frequency of the surface wave exciter can be changed.

この場合、機械的な制御ではなく、電気的な制御で誘電体の誘電率を変えて、表面波励振体の励振周波数を変化させてもよい。これにより、表面波励振体の励振周波数を、比較的大きく変化させることができる。そのため、被加熱物の厚み方向における加熱状態を、大きく変化させることができる。これにより、ユーザが所望する、加熱状態の範囲を拡大して、多彩に被加熱物を加熱処理できる。 In this case, the excitation frequency of the surface wave exciter may be changed by changing the dielectric constant of the dielectric by electrical control instead of mechanical control. Thereby, the excitation frequency of the surface wave exciter can be changed relatively greatly. Therefore, the heating state in the thickness direction of the object to be heated can be significantly changed. As a result, the range of the heated state desired by the user can be expanded, and the object to be heated can be heat-treated in various ways.

なお、上記実施の形態では、高周波加熱装置の用途に関しては、特に言及しなかったが、例えば、以下に説明する一般的な調理用の電子レンジと同様の基本構成としてもよい。 In the above embodiment, the use of the high-frequency heating device is not particularly mentioned, but for example, the basic configuration may be the same as that of a general cooking microwave oven described below.

すなわち、電子レンジは、少なくとも加熱室と、高周波電力発生部と、導波管と、加熱部を構成する表面波励振体と、ドアと、ドアチョーク溝などで構成される。加熱室は、略直方体状(直方体状を含む)で形成され、内部に加熱する被加熱物が載置される。高周波電力発生部は、マグネトロンなどで構成され、加熱室内に高周波電力を供給する。高周波電力発生部は、筐体下部や筐体側部に設けられる。導波管は、高周波電力発生部で発生させるマイクロ波を加熱室内に供給する。表面波励振体は、加熱室の下部や背部あるいは上部に設けられ、高周波電力を伝播させて、被加熱物を加熱する。ドアは、加熱室を開閉するために、筐体前面に設置される。ドアチョーク溝は、ドアの周囲に設けられ、マイクロ波などの電磁波漏れを防止する。 That is, the microwave oven is composed of at least a heating chamber, a high-frequency power generating unit, a waveguide, a surface wave exciter constituting the heating unit, a door, a door choke groove, and the like. The heating chamber is formed in a substantially rectangular parallelepiped shape (including a rectangular parallelepiped shape), and an object to be heated is placed therein. The high-frequency power generator is composed of a magnetron or the like, and supplies high-frequency power to the heating chamber. The high-frequency power generator is provided at the lower part of the housing or the side of the housing. The waveguide supplies microwaves generated by the high-frequency power generator into the heating chamber. The surface wave exciter is provided in the lower part, the back part or the upper part of the heating chamber, and propagates high frequency electric power to heat the object to be heated. The door is installed on the front of the housing to open and close the heating chamber. The door choke groove is provided around the door to prevent electromagnetic wave leakage such as microwaves.

以上、本発明に係る高周波加熱装置について、実施の形態に基づき説明したが、本発明はこの実施の形態に限定されるものではない。本発明の趣旨を逸脱しない限り、当業者が思いつく各種変形を各実施の形態に施したものや、異なる実施の形態における構成要素を組み合わせて構築される形態も、本発明の範囲内に含まれる。 The high-frequency heating device according to the present invention has been described above based on the embodiment, but the present invention is not limited to this embodiment. As long as the gist of the present invention is not deviated, various modifications that can be conceived by those skilled in the art are applied to each embodiment, and a form constructed by combining components in different embodiments is also included in the scope of the present invention. ..

以上で説明したように、本発明の高周波加熱装置は、高周波電力を発生させる高周波電力発生部と、高周波電力を表面波で伝播して被加熱物を加熱する表面波励振体と、高周波電力を表面波励振体に供給する高周波電力供給部と、被加熱物を設置する設置台を備える。高周波電力発生部は、所望される表面波励振体近傍の高周波電力の表面集中度に応じて、表面波励振体に供給する高周波電力の周波数と表面波励振体の励振周波数との大小関係を選定して前記表面波励振体に供給する前記高周波電力の周波数を設定して、被加熱物を加熱処理する。 As described above, the high-frequency heating device of the present invention uses a high-frequency power generator that generates high-frequency power, a surface wave exciter that propagates high-frequency power by surface waves to heat an object to be heated, and high-frequency power. It is equipped with a high-frequency power supply unit that supplies the surface wave exciter and an installation stand on which the object to be heated is installed. The high-frequency power generator selects the magnitude relationship between the frequency of the high-frequency power supplied to the surface wave exciter and the excitation frequency of the surface wave exciter according to the surface concentration of the high-frequency power near the desired surface wave exciter. Then, the frequency of the high frequency power supplied to the surface wave exciter is set, and the object to be heated is heat-treated.

この構成によれば、被加熱物の厚み方向において、ユーザが所望する加熱状態に応じて、表面波励振体に供給する高周波電力の周波数と、表面波励振体の励振周波数との大小関係を設定する。これにより、被加熱物の厚み方向において、所望の加熱状態で被加熱物を加熱処理できる。 According to this configuration, the magnitude relationship between the frequency of the high-frequency power supplied to the surface wave exciter and the excitation frequency of the surface wave exciter is set according to the heating state desired by the user in the thickness direction of the object to be heated. do. Thereby, the object to be heated can be heat-treated in a desired heating state in the thickness direction of the object to be heated.

また、本発明の高周波加熱装置は、表面波励振体に供給する高周波電力の周波数を、表面波励振体の励振周波数に等しい、または表面波励振体の励振周波数よりも低く設定してもよい。 Further, in the high frequency heating device of the present invention, the frequency of the high frequency power supplied to the surface wave exciter may be set equal to the excitation frequency of the surface wave exciter or lower than the excitation frequency of the surface wave exciter.

この構成によれば、表面波励振体に供給された高周波電力は、表面波励振体の表面近傍を表面波で伝播する、「表面波モード」の動作となる。これにより、被加熱物の表面波励振体に近い側を集中して加熱できる。 According to this configuration, the high-frequency power supplied to the surface wave exciter becomes a "surface wave mode" operation in which the surface wave propagates in the vicinity of the surface of the surface wave exciter. As a result, the side of the object to be heated near the surface wave exciter can be concentrated and heated.

また、本発明の高周波加熱装置は、表面波励振体に供給する高周波電力の周波数を、表面波励振体の励振周波数よりも高く設定してもよい。 Further, in the high frequency heating device of the present invention, the frequency of the high frequency power supplied to the surface wave exciter may be set higher than the excitation frequency of the surface wave exciter.

この構成によれば、表面波励振体に供給された高周波電力は、表面波励振体の表面近傍を表面波で伝播せず、空間に放射される「放射モード」の動作となる。これにより、被加熱物全体を万遍なく加熱できる。 According to this configuration, the high-frequency power supplied to the surface wave exciter does not propagate in the vicinity of the surface of the surface wave exciter by the surface wave, but is radiated into the space in the “radiation mode” operation. As a result, the entire object to be heated can be heated evenly.

また、本発明の高周波加熱装置は、高周波電力発生部を、設定された周波数の高周波電力を発生する、周波数可変の高周波発振器で構成してもよい。 Further, in the high frequency heating device of the present invention, the high frequency power generating unit may be configured by a frequency variable high frequency oscillator that generates high frequency power of a set frequency.

この構成によれば、表面波励振体に供給する高周波電力の周波数を可変にできる。これにより、表面波励振体の励振周波数に対する、高周波電力の周波数を任意に設定できる。その結果、表面波励振体で形成される電界強度分布を任意に調整できる。そのため、被加熱物の厚み方向において、様々な加熱状態で被加熱物を加熱処理できる。 According to this configuration, the frequency of the high frequency power supplied to the surface wave exciter can be changed. Thereby, the frequency of the high frequency power can be arbitrarily set with respect to the excitation frequency of the surface wave exciter. As a result, the electric field intensity distribution formed by the surface wave exciter can be arbitrarily adjusted. Therefore, the object to be heated can be heat-treated in various heating states in the thickness direction of the object to be heated.

また、本発明の高周波加熱装置は、表面波励振体を、励振周波数を可変できる、励振周波数可変の表面波励振体で構成してもよい。 Further, in the high frequency heating device of the present invention, the surface wave exciter may be composed of a surface wave exciter having a variable excitation frequency and a variable excitation frequency.

この構成によれば、表面波励振体に供給される高周波電力の周波数に対して、表面波励振体の励振周波数を可変できる。これにより、被加熱物の厚み方向において、様々な加熱状態で被加熱物を加熱処理できる。 According to this configuration, the excitation frequency of the surface wave exciter can be changed with respect to the frequency of the high frequency power supplied to the surface wave exciter. Thereby, the object to be heated can be heat-treated in various heating states in the thickness direction of the object to be heated.

本発明は、被加熱物の厚み方向において、所望の加熱状態で加熱処理が要望される、マイクロ波加熱機などの調理家電などに有用である。 The present invention is useful for cooking appliances such as microwave heaters, where heat treatment is required in a desired heating state in the thickness direction of the object to be heated.

100 高周波加熱装置
101 設置台
102 被加熱物
103 表面波励振体
110 高周波電力供給部
120 高周波電力発生部
130 方形導波管
131 テーパ形状の方形導波管
141,142 電界強度分布
100 High-frequency heating device 101 Installation stand 102 Heated object 103 Surface wave exciter 110 High-frequency power supply unit 120 High-frequency power generator 130 Square waveguide 131 Tapered square waveguide 141,142 Electric field strength distribution

Claims (5)

高周波電力を発生させる高周波電力発生部と、
前記高周波電力を表面波で伝播して被加熱物を加熱する表面波励振体と、
前記高周波電力を前記表面波励振体に供給する高周波電力供給部と、
前記被加熱物を設置する設置台と、を備え、
前記高周波電力発生部は、所望される前記表面波励振体近傍の前記高周波電力の表面集中度に応じて、前記表面波励振体に供給する前記高周波電力の周波数と前記表面波励振体の励振周波数との大小関係を選定して前記表面波励振体に供給する前記高周波電力の周波数を設定して、前記被加熱物を加熱処理する、高周波加熱装置。
A high-frequency power generator that generates high-frequency power,
A surface wave exciter that propagates the high-frequency power with a surface wave to heat the object to be heated,
A high-frequency power supply unit that supplies the high-frequency power to the surface wave exciter, and
It is equipped with an installation stand on which the object to be heated is installed.
The high-frequency power generating unit has a frequency of the high-frequency power supplied to the surface wave exciter and an excitation frequency of the surface wave exciter according to the desired surface concentration of the high-frequency power in the vicinity of the surface wave exciter. A high-frequency heating device that heat-treats the object to be heated by selecting the magnitude relationship with and setting the frequency of the high-frequency power supplied to the surface wave exciter.
前記表面波励振体に供給する高周波電力の周波数は、前記表面波励振体の励振周波数に等しい、または前記表面波励振体の励振周波数よりも低い、請求項1に記載の高周波加熱装置。 The high-frequency heating device according to claim 1, wherein the frequency of the high-frequency power supplied to the surface wave exciter is equal to the excitation frequency of the surface wave exciter or lower than the excitation frequency of the surface wave exciter. 前記表面波励振体に供給する高周波電力の周波数は、前記表面波励振体の励振周波数よりも高い、請求項1に記載の高周波加熱装置。 The high-frequency heating device according to claim 1, wherein the frequency of the high-frequency power supplied to the surface wave exciter is higher than the excitation frequency of the surface wave exciter. 前記高周波電力発生部は、設定された周波数の高周波電力を発生する、周波数可変の高周波発振器で構成される、請求項1に記載の高周波加熱装置。 The high-frequency heating device according to claim 1, wherein the high-frequency power generator is composed of a frequency-variable high-frequency oscillator that generates high-frequency power of a set frequency. 前記表面波励振体は、励振周波数を可変できる、励振周波数可変の表面波励振体で構成される、請求項1に記載の高周波加熱装置。
The high-frequency heating device according to claim 1, wherein the surface wave exciter is composed of a surface wave exciter having a variable excitation frequency and a variable excitation frequency.
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