JP6929643B2 - 撮像装置および撮像システム - Google Patents

撮像装置および撮像システム Download PDF

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Publication number
JP6929643B2
JP6929643B2 JP2016254362A JP2016254362A JP6929643B2 JP 6929643 B2 JP6929643 B2 JP 6929643B2 JP 2016254362 A JP2016254362 A JP 2016254362A JP 2016254362 A JP2016254362 A JP 2016254362A JP 6929643 B2 JP6929643 B2 JP 6929643B2
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Japan
Prior art keywords
electrode
potential
signal
region
photoelectric conversion
Prior art date
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Expired - Fee Related
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JP2016254362A
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English (en)
Japanese (ja)
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JP2018107724A (ja
JP2018107724A5 (enExample
Inventor
達人 郷田
達人 郷田
高橋　秀和
秀和 高橋
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2016254362A priority Critical patent/JP6929643B2/ja
Priority to US15/845,817 priority patent/US10244193B2/en
Publication of JP2018107724A publication Critical patent/JP2018107724A/ja
Publication of JP2018107724A5 publication Critical patent/JP2018107724A5/ja
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2016254362A 2016-12-27 2016-12-27 撮像装置および撮像システム Expired - Fee Related JP6929643B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016254362A JP6929643B2 (ja) 2016-12-27 2016-12-27 撮像装置および撮像システム
US15/845,817 US10244193B2 (en) 2016-12-27 2017-12-18 Imaging apparatus and imaging system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016254362A JP6929643B2 (ja) 2016-12-27 2016-12-27 撮像装置および撮像システム

Publications (3)

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JP2018107724A JP2018107724A (ja) 2018-07-05
JP2018107724A5 JP2018107724A5 (enExample) 2020-02-06
JP6929643B2 true JP6929643B2 (ja) 2021-09-01

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JP2016254362A Expired - Fee Related JP6929643B2 (ja) 2016-12-27 2016-12-27 撮像装置および撮像システム

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US (1) US10244193B2 (enExample)
JP (1) JP6929643B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018046039A (ja) * 2016-09-12 2018-03-22 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像装置
JP7299711B2 (ja) * 2019-01-30 2023-06-28 キヤノン株式会社 光電変換装置及びその駆動方法
US11272132B2 (en) * 2019-06-07 2022-03-08 Pacific Biosciences Of California, Inc. Temporal differential active pixel sensor
JP2021057885A (ja) * 2019-09-26 2021-04-08 パナソニックＩｐマネジメント株式会社 撮像装置およびその駆動方法
WO2022230292A1 (ja) 2021-04-30 2022-11-03 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、電子機器および移動体
EP4562864A1 (en) * 2022-07-25 2025-06-04 Sony Semiconductor Solutions Corporation Solid-state imaging device for encoded readout and method of operating the same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8067813B2 (en) 2004-07-01 2011-11-29 Varian Medical Systems Technologies, Inc. Integrated MIS photosensitive device using continuous films
KR101774491B1 (ko) * 2011-10-14 2017-09-13 삼성전자주식회사 유기 포토다이오드를 포함하는 유기 픽셀, 이의 제조 방법, 및 상기 유기 픽셀을 포함하는 장치들
US20130140442A1 (en) * 2011-12-02 2013-06-06 Sony Corporation Amplifying circuit and manufacturing method, solid-state imaging element, and electronic device
JP2015188129A (ja) 2014-03-26 2015-10-29 キヤノン株式会社 検出装置、その制御方法及び検出システム
JP6374690B2 (ja) 2014-04-01 2018-08-15 キヤノン株式会社 撮像装置及びその制御方法、プログラム、記憶媒体
JP6389685B2 (ja) * 2014-07-30 2018-09-12 キヤノン株式会社 撮像装置、および、撮像システム
JP6682175B2 (ja) * 2014-07-31 2020-04-15 キヤノン株式会社 固体撮像素子および撮像システム
JP6213743B2 (ja) * 2014-10-08 2017-10-18 パナソニックＩｐマネジメント株式会社 撮像装置およびその駆動方法
US9602750B2 (en) * 2014-11-25 2017-03-21 Semiconductor Components Industries, Llc Image sensor pixels having built-in variable gain feedback amplifier circuitry
JP2016127264A (ja) * 2014-12-26 2016-07-11 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP6595804B2 (ja) * 2015-05-27 2019-10-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および撮像装置
JP6780421B2 (ja) * 2016-03-01 2020-11-04 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法
JP6808463B2 (ja) * 2016-11-30 2021-01-06 キヤノン株式会社 光電変換装置および光電変換システム

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Publication number Publication date
JP2018107724A (ja) 2018-07-05
US20180184019A1 (en) 2018-06-28
US10244193B2 (en) 2019-03-26

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