JP6914191B2 - 追従性のある研磨パッド及び研磨モジュール - Google Patents
追従性のある研磨パッド及び研磨モジュール Download PDFInfo
- Publication number
- JP6914191B2 JP6914191B2 JP2017520873A JP2017520873A JP6914191B2 JP 6914191 B2 JP6914191 B2 JP 6914191B2 JP 2017520873 A JP2017520873 A JP 2017520873A JP 2017520873 A JP2017520873 A JP 2017520873A JP 6914191 B2 JP6914191 B2 JP 6914191B2
- Authority
- JP
- Japan
- Prior art keywords
- flexible base
- polishing
- polishing pad
- chuck
- contact area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005498 polishing Methods 0.000 title claims description 203
- 239000000758 substrate Substances 0.000 claims description 100
- 239000012530 fluid Substances 0.000 description 29
- 239000000463 material Substances 0.000 description 28
- 238000012545 processing Methods 0.000 description 22
- 238000000034 method Methods 0.000 description 16
- 230000003750 conditioning effect Effects 0.000 description 12
- 239000010408 film Substances 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000007517 polishing process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000012636 effector Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/04—Headstocks; Working-spindles; Features relating thereto
- B24B41/047—Grinding heads for working on plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
式1:
接触面積×圧力=下向きの力+(研磨ヘッドの)重量
Claims (12)
- 円形チャックの上方において、該円形チャックの周囲から第1の方向に延びる支持アームと、
前記支持アームに連結された運動機構と、
前記第1の方向と垂直な第2の方向において、前記支持アームに固定されたハウジングと、
前記ハウジングに連結されたフレキシブルベースであって、研磨パッドを構成するフレキシブルベースと、
前記フレキシブルベースの第一の側に配置された接触領域であって、前記第一の側において前記フレキシブルベースから突出して、該接触領域内における前記研磨パッドの厚さを該接触領域の周囲における前記研磨パッドの厚さよりも厚くする接触領域と
を含む研磨デバイスであって、
前記接触領域は、前記支持アームが前記円形チャックの上方に配されている際に実質的に前記円形チャックの回転軸に沿って位置する中心を持つ半径を有する、弧状の形状とされており、
前記フレキシブルベースは、前記ハウジング及び前記フレキシブルベースの第二の側の内部に含まれる圧力に基づいて膨張及び収縮し、前記フレキシブルベースの表面積より小さい接触面積を前記第一の側に形成する、
研磨デバイス。 - ハウジングと、
前記ハウジングに連結されたフレキシブルベースと、
前記フレキシブルベースの第一の側に配置された接触領域と
を含む研磨デバイスであって、
前記フレキシブルベースは、前記ハウジング及び前記フレキシブルベースの第二の側の内部に含まれる圧力に基づいて膨張及び収縮し、前記フレキシブルベースの表面積より小さい接触面積を前記第一の側に形成し、
前記フレキシブルベースは、弧状であり、前記接触領域は、弧状の前記フレキシブルベース上で弧状に配向された複数の別々の接触パッドを含む、
研磨デバイス。 - 前記接触領域が、前記第一の側において前記フレキシブルベースから突出している、請求項2に記載のデバイス。
- 前記フレキシブルベースが、隆起したリップをその周囲に備える、請求項1から3のいずれか1項に記載のデバイス。
- 前記接触面積が、調整可能である、請求項1から4のいずれか1項に記載のデバイス。
- 基板受取り面及び周囲を有する、回転可能なチャック、
前記チャックの前記周囲の上方において第1の方向に延び、前記チャックに対して相対移動可能な支持アーム、
前記第1の方向と垂直な第2の方向において、前記支持アームに固定されたハウジング、並びに
前記ハウジング上に配された研磨パッドであって、該研磨パッドは、該研磨パッドを構成するフレキシブルベースの中心の近くに配置された接触領域であって、前記フレキシブルベースの表側において前記フレキシブルベースから突出して、該接触領域内における前記研磨パッドの厚さを該接触領域の周囲における前記研磨パッドの厚さよりも厚くする接触領域を含み、該接触領域は、前記チャックの前記周囲と少なくとも同心である弧状の形状を有し、前記研磨パッドは、前記フレキシブルベースの裏側への加圧によって膨らませることができる、研磨パッド
を備える、
研磨モジュール。 - 前記チャックは円形であり、前記接触領域の弧状の形状の弧の中心は、円形の前記チャックの中心軸上にある、請求項6に記載のモジュール。
- 基板受取り面及び周囲を有するチャック、並びに
前記チャックの前記周囲の近くに配置され、フレキシブルベースの中心の近くに配置された接触領域を含み、前記フレキシブルベースの裏側への加圧によって膨らませることができる、研磨パッド
を備え、
前記フレキシブルベースは、弧状であり、前記接触領域は、弧状の前記フレキシブルベース上で弧状に配向された複数の別々の接触パッドを含む、
研磨モジュール。 - 前記チャックは円形であり、弧状の前記フレキシブルベースの弧の中心は、円形の前記チャックの中心軸上にある、請求項8に記載のモジュール。
- 前記接触領域が、前記フレキシブルベースの表側において前記フレキシブルベースから突出している、請求項8または9に記載のモジュール。
- 前記接触領域が、前記フレキシブルベースに取外し可能に連結されている、請求項6から10のいずれか1項に記載のモジュール。
- 前記チャックを回転させる駆動デバイスをさらに備え、
研磨動作中において、前記基板受取り面上に研磨対象の基板が置かれた状態で前記チャックが回転される一方、前記研磨パッドは回転されない、
請求項6から11のいずれか1項に記載のモジュール。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462020857P | 2014-07-03 | 2014-07-03 | |
US62/020,857 | 2014-07-03 | ||
US14/476,991 | 2014-09-04 | ||
US14/476,991 US9751189B2 (en) | 2014-07-03 | 2014-09-04 | Compliant polishing pad and polishing module |
PCT/US2015/030592 WO2016003545A1 (en) | 2014-07-03 | 2015-05-13 | Compliant polishing pad and polishing module |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017525582A JP2017525582A (ja) | 2017-09-07 |
JP6914191B2 true JP6914191B2 (ja) | 2021-08-04 |
Family
ID=55017508
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017520873A Active JP6914191B2 (ja) | 2014-07-03 | 2015-05-13 | 追従性のある研磨パッド及び研磨モジュール |
Country Status (6)
Country | Link |
---|---|
US (1) | US9751189B2 (ja) |
JP (1) | JP6914191B2 (ja) |
KR (1) | KR102242320B1 (ja) |
CN (1) | CN106471607B (ja) |
TW (1) | TWI670142B (ja) |
WO (1) | WO2016003545A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10105812B2 (en) * | 2014-07-17 | 2018-10-23 | Applied Materials, Inc. | Polishing pad configuration and polishing pad support |
US10144109B2 (en) * | 2015-12-30 | 2018-12-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Polisher, polishing tool, and polishing method |
US9873179B2 (en) * | 2016-01-20 | 2018-01-23 | Applied Materials, Inc. | Carrier for small pad for chemical mechanical polishing |
JP6641197B2 (ja) | 2016-03-10 | 2020-02-05 | 株式会社荏原製作所 | 基板の研磨装置および研磨方法 |
CN109155249B (zh) * | 2016-03-25 | 2023-06-23 | 应用材料公司 | 局部区域研磨系统以及用于研磨系统的研磨垫组件 |
CN109075054B (zh) * | 2016-03-25 | 2023-06-09 | 应用材料公司 | 具有局部区域速率控制及振荡模式的研磨系统 |
SG11201902651QA (en) * | 2016-10-18 | 2019-05-30 | Ebara Corp | Substrate processing control system, substrate processing control method, and program |
CN208584374U (zh) * | 2018-02-26 | 2019-03-08 | 凯斯科技股份有限公司 | 基板处理装置 |
TW202116485A (zh) * | 2019-08-27 | 2021-05-01 | 美商應用材料股份有限公司 | 化學機械拋光校正工具 |
US11724355B2 (en) | 2020-09-30 | 2023-08-15 | Applied Materials, Inc. | Substrate polish edge uniformity control with secondary fluid dispense |
JP2023516869A (ja) | 2020-10-13 | 2023-04-21 | アプライド マテリアルズ インコーポレイテッド | 接点延長部又は調節可能な止め具を有する基板研磨装置 |
US11623321B2 (en) | 2020-10-14 | 2023-04-11 | Applied Materials, Inc. | Polishing head retaining ring tilting moment control |
US20230024009A1 (en) * | 2021-07-20 | 2023-01-26 | Applied Materials, Inc. | Face-up wafer edge polishing apparatus |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5255474A (en) * | 1990-08-06 | 1993-10-26 | Matsushita Electric Industrial Co., Ltd. | Polishing spindle |
US6439979B1 (en) * | 1992-02-12 | 2002-08-27 | Tokyo Electron Limited | Polishing apparatus and polishing method using the same |
US5938504A (en) | 1993-11-16 | 1999-08-17 | Applied Materials, Inc. | Substrate polishing apparatus |
US7097544B1 (en) | 1995-10-27 | 2006-08-29 | Applied Materials Inc. | Chemical mechanical polishing system having multiple polishing stations and providing relative linear polishing motion |
US5840202A (en) | 1996-04-26 | 1998-11-24 | Memc Electronic Materials, Inc. | Apparatus and method for shaping polishing pads |
JPH1044025A (ja) * | 1996-07-29 | 1998-02-17 | Matsushita Electric Ind Co Ltd | 平面研磨装置 |
US5931719A (en) * | 1997-08-25 | 1999-08-03 | Lsi Logic Corporation | Method and apparatus for using pressure differentials through a polishing pad to improve performance in chemical mechanical polishing |
US6165057A (en) * | 1998-05-15 | 2000-12-26 | Gill, Jr.; Gerald L. | Apparatus for localized planarization of semiconductor wafer surface |
JP2000190204A (ja) * | 1998-12-28 | 2000-07-11 | Matsushita Electric Ind Co Ltd | 研磨方法と装置、それらに用いる目立て方法、研磨具 |
US6113466A (en) | 1999-01-29 | 2000-09-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for controlling polishing profile in chemical mechanical polishing |
US6602121B1 (en) | 1999-10-28 | 2003-08-05 | Strasbaugh | Pad support apparatus for chemical mechanical planarization |
US7141146B2 (en) | 2000-02-23 | 2006-11-28 | Asm Nutool, Inc. | Means to improve center to edge uniformity of electrochemical mechanical processing of workpiece surface |
US6722965B2 (en) | 2000-07-11 | 2004-04-20 | Applied Materials Inc. | Carrier head with flexible membranes to provide controllable pressure and loading area |
US6585572B1 (en) | 2000-08-22 | 2003-07-01 | Lam Research Corporation | Subaperture chemical mechanical polishing system |
US6561881B2 (en) | 2001-03-15 | 2003-05-13 | Oriol Inc. | System and method for chemical mechanical polishing using multiple small polishing pads |
US6857941B2 (en) | 2001-06-01 | 2005-02-22 | Applied Materials, Inc. | Multi-phase polishing pad |
JP2003092274A (ja) | 2001-09-19 | 2003-03-28 | Nikon Corp | 加工装置および方法、この装置を用いた半導体デバイス製造方法およびこの方法により製造される半導体デバイス |
TW544375B (en) * | 2002-09-09 | 2003-08-01 | Taiwan Semiconductor Mfg | Chemical mechanical polishing head |
JP2004142031A (ja) * | 2002-10-24 | 2004-05-20 | Speedfam Co Ltd | デバイスウェハの周辺部研磨装置 |
US7520939B2 (en) | 2003-04-18 | 2009-04-21 | Applied Materials, Inc. | Integrated bevel clean chamber |
KR100807046B1 (ko) * | 2003-11-26 | 2008-02-25 | 동부일렉트로닉스 주식회사 | 화학기계적 연마장치 |
US7255771B2 (en) | 2004-03-26 | 2007-08-14 | Applied Materials, Inc. | Multiple zone carrier head with flexible membrane |
WO2006042010A1 (en) * | 2004-10-06 | 2006-04-20 | Rajeev Bajaj | Method and apparatus for improved chemical mechanical planarization |
DE502005000312D1 (de) * | 2004-10-29 | 2007-02-22 | Schneider Gmbh & Co Kg | Polierwerkzeug mit mehreren Druckzonen |
US7993485B2 (en) | 2005-12-09 | 2011-08-09 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
US7312154B2 (en) * | 2005-12-20 | 2007-12-25 | Corning Incorporated | Method of polishing a semiconductor-on-insulator structure |
KR20070117304A (ko) | 2006-06-08 | 2007-12-12 | 삼성전자주식회사 | 연마 패드 컨디셔너 세정 장치 |
US8142260B2 (en) | 2007-05-21 | 2012-03-27 | Applied Materials, Inc. | Methods and apparatus for removal of films and flakes from the edge of both sides of a substrate using backing pads |
JP2011224697A (ja) | 2010-04-19 | 2011-11-10 | Disco Corp | 研磨パッドの修正方法 |
KR101941586B1 (ko) * | 2011-01-03 | 2019-01-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 압력 제어되는 폴리싱 플래튼 |
-
2014
- 2014-09-04 US US14/476,991 patent/US9751189B2/en active Active
-
2015
- 2015-05-13 KR KR1020177002881A patent/KR102242320B1/ko active IP Right Grant
- 2015-05-13 JP JP2017520873A patent/JP6914191B2/ja active Active
- 2015-05-13 CN CN201580034167.2A patent/CN106471607B/zh active Active
- 2015-05-13 WO PCT/US2015/030592 patent/WO2016003545A1/en active Application Filing
- 2015-06-03 TW TW104117992A patent/TWI670142B/zh active
Also Published As
Publication number | Publication date |
---|---|
JP2017525582A (ja) | 2017-09-07 |
TWI670142B (zh) | 2019-09-01 |
KR102242320B1 (ko) | 2021-04-20 |
CN106471607A (zh) | 2017-03-01 |
US20160005618A1 (en) | 2016-01-07 |
CN106471607B (zh) | 2021-02-02 |
WO2016003545A1 (en) | 2016-01-07 |
KR20170029541A (ko) | 2017-03-15 |
US9751189B2 (en) | 2017-09-05 |
TW201607679A (zh) | 2016-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6914191B2 (ja) | 追従性のある研磨パッド及び研磨モジュール | |
KR102535628B1 (ko) | 화학적 기계적 연마를 위한 조직화된 소형 패드 | |
TWI692385B (zh) | 化學機械硏磨所用的方法、系統與硏磨墊 | |
US9156130B2 (en) | Method of adjusting profile of a polishing member used in a polishing apparatus, and polishing apparatus | |
JP6442495B2 (ja) | 局所領域流量制御を備える研磨システム | |
US11072049B2 (en) | Polishing pad having arc-shaped configuration | |
US9815171B2 (en) | Substrate holder, polishing apparatus, polishing method, and retaining ring | |
CN108604543B (zh) | 用于化学机械抛光的小型垫的载体 | |
JP6778176B2 (ja) | 基板の厚さプロファイルの調節 | |
US9662762B2 (en) | Modifying substrate thickness profiles | |
TWI590912B (zh) | 具有所選剛性與厚度之固定環 | |
US9254547B2 (en) | Side pad design for edge pedestal | |
US9987724B2 (en) | Polishing system with pad carrier and conditioning station |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180510 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190322 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190326 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190626 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190820 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191118 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20200121 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200521 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20200521 |
|
A911 | Transfer of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20200604 |
|
C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20200609 |
|
A912 | Removal of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20200626 |
|
C211 | Notice of termination of reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C211 Effective date: 20200630 |
|
C22 | Notice of designation (change) of administrative judge |
Free format text: JAPANESE INTERMEDIATE CODE: C22 Effective date: 20201104 |
|
C13 | Notice of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: C13 Effective date: 20201201 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210226 |
|
C22 | Notice of designation (change) of administrative judge |
Free format text: JAPANESE INTERMEDIATE CODE: C22 Effective date: 20210323 |
|
C22 | Notice of designation (change) of administrative judge |
Free format text: JAPANESE INTERMEDIATE CODE: C22 Effective date: 20210413 |
|
C302 | Record of communication |
Free format text: JAPANESE INTERMEDIATE CODE: C302 Effective date: 20210506 |
|
C23 | Notice of termination of proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C23 Effective date: 20210511 |
|
C03 | Trial/appeal decision taken |
Free format text: JAPANESE INTERMEDIATE CODE: C03 Effective date: 20210615 |
|
C30A | Notification sent |
Free format text: JAPANESE INTERMEDIATE CODE: C3012 Effective date: 20210615 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210713 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6914191 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |