JP6896344B2 - チップの製造方法 - Google Patents

チップの製造方法 Download PDF

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Publication number
JP6896344B2
JP6896344B2 JP2017182986A JP2017182986A JP6896344B2 JP 6896344 B2 JP6896344 B2 JP 6896344B2 JP 2017182986 A JP2017182986 A JP 2017182986A JP 2017182986 A JP2017182986 A JP 2017182986A JP 6896344 B2 JP6896344 B2 JP 6896344B2
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JP
Japan
Prior art keywords
workpiece
modified layer
chip
holding
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017182986A
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English (en)
Japanese (ja)
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JP2019061980A5 (enExample
JP2019061980A (ja
Inventor
良彰 淀
良彰 淀
金艶 趙
金艶 趙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2017182986A priority Critical patent/JP6896344B2/ja
Priority to KR1020180106688A priority patent/KR102578958B1/ko
Priority to CN201811080404.0A priority patent/CN109531838B/zh
Priority to TW107133067A priority patent/TWI770280B/zh
Publication of JP2019061980A publication Critical patent/JP2019061980A/ja
Publication of JP2019061980A5 publication Critical patent/JP2019061980A5/ja
Application granted granted Critical
Publication of JP6896344B2 publication Critical patent/JP6896344B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/06—Grinders for cutting-off
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/06—Grinders for cutting-off
    • B24B27/0675—Grinders for cutting-off methods therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2017182986A 2017-09-22 2017-09-22 チップの製造方法 Active JP6896344B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017182986A JP6896344B2 (ja) 2017-09-22 2017-09-22 チップの製造方法
KR1020180106688A KR102578958B1 (ko) 2017-09-22 2018-09-06 칩의 제조 방법
CN201811080404.0A CN109531838B (zh) 2017-09-22 2018-09-17 芯片的制造方法
TW107133067A TWI770280B (zh) 2017-09-22 2018-09-19 晶片製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017182986A JP6896344B2 (ja) 2017-09-22 2017-09-22 チップの製造方法

Publications (3)

Publication Number Publication Date
JP2019061980A JP2019061980A (ja) 2019-04-18
JP2019061980A5 JP2019061980A5 (enExample) 2020-03-05
JP6896344B2 true JP6896344B2 (ja) 2021-06-30

Family

ID=65838977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017182986A Active JP6896344B2 (ja) 2017-09-22 2017-09-22 チップの製造方法

Country Status (4)

Country Link
JP (1) JP6896344B2 (enExample)
KR (1) KR102578958B1 (enExample)
CN (1) CN109531838B (enExample)
TW (1) TWI770280B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI733604B (zh) * 2020-06-10 2021-07-11 財團法人工業技術研究院 玻璃工件雷射處理系統及方法
CN118002911A (zh) * 2024-03-12 2024-05-10 海目星激光科技集团股份有限公司 硅片激光加工设备和方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
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JPS5939769B2 (ja) * 1981-03-27 1984-09-26 昭和情報機器株式会社 入力装置
JP3408805B2 (ja) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
JP4659300B2 (ja) * 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
JP3842769B2 (ja) * 2003-09-01 2006-11-08 株式会社東芝 レーザ加工装置、レーザ加工方法、及び半導体装置の製造方法
US20060030156A1 (en) * 2004-08-05 2006-02-09 Applied Materials, Inc. Abrasive conductive polishing article for electrochemical mechanical polishing
CN100481337C (zh) * 2004-12-08 2009-04-22 雷射先进科技株式会社 被分割体的分割起点形成方法、被分割体的分割方法
JP4198123B2 (ja) * 2005-03-22 2008-12-17 浜松ホトニクス株式会社 レーザ加工方法
JP2007019379A (ja) * 2005-07-11 2007-01-25 Disco Abrasive Syst Ltd ウェーハの加工方法
CN100536108C (zh) * 2005-11-16 2009-09-02 株式会社电装 半导体器件和半导体基板切分方法
WO2010098186A1 (ja) * 2009-02-25 2010-09-02 日亜化学工業株式会社 半導体素子の製造方法
JP5791866B2 (ja) 2009-03-06 2015-10-07 株式会社ディスコ ワーク分割装置
JP2011061043A (ja) * 2009-09-10 2011-03-24 Disco Abrasive Syst Ltd 加工方法および半導体デバイスの製造方法
JP5686551B2 (ja) * 2010-08-31 2015-03-18 株式会社ディスコ ウエーハの加工方法
JP5480169B2 (ja) * 2011-01-13 2014-04-23 浜松ホトニクス株式会社 レーザ加工方法
TWI457191B (zh) * 2011-02-04 2014-10-21 Mitsuboshi Diamond Ind Co Ltd 雷射切割方法及雷射加工裝置
KR20130033114A (ko) * 2011-09-26 2013-04-03 주식회사 이오테크닉스 레이저 가공방법
JP5939769B2 (ja) 2011-11-11 2016-06-22 株式会社ディスコ 板状物の加工方法
JP5964580B2 (ja) * 2011-12-26 2016-08-03 株式会社ディスコ ウェーハの加工方法
JP2013152987A (ja) * 2012-01-24 2013-08-08 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2013236001A (ja) * 2012-05-10 2013-11-21 Disco Abrasive Syst Ltd 板状物の分割方法
JP2014199834A (ja) * 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) * 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法
US9236284B2 (en) * 2014-01-31 2016-01-12 Applied Materials, Inc. Cooled tape frame lift and low contact shadow ring for plasma heat isolation
CN105171235B (zh) * 2014-06-23 2018-06-01 大族激光科技产业集团股份有限公司 一种双焦点激光微加工装置及其加工方法
JP6399914B2 (ja) * 2014-12-04 2018-10-03 株式会社ディスコ ウエーハの生成方法
JP6395613B2 (ja) * 2015-01-06 2018-09-26 株式会社ディスコ ウエーハの生成方法
JP6456228B2 (ja) * 2015-04-15 2019-01-23 株式会社ディスコ 薄板の分離方法
JP6482389B2 (ja) * 2015-06-02 2019-03-13 株式会社ディスコ ウエーハの生成方法
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JP6486239B2 (ja) * 2015-08-18 2019-03-20 株式会社ディスコ ウエーハの加工方法
JP6504977B2 (ja) * 2015-09-16 2019-04-24 株式会社ディスコ ウエーハの加工方法
JP6605278B2 (ja) * 2015-09-29 2019-11-13 浜松ホトニクス株式会社 レーザ加工方法
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CN106328778B (zh) * 2016-09-14 2019-03-08 中国科学院半导体研究所 隐形切割制备正、倒和倒梯形台状衬底的led芯片的方法

Also Published As

Publication number Publication date
KR102578958B1 (ko) 2023-09-14
TW201916138A (zh) 2019-04-16
CN109531838A (zh) 2019-03-29
KR20190034085A (ko) 2019-04-01
JP2019061980A (ja) 2019-04-18
TWI770280B (zh) 2022-07-11
CN109531838B (zh) 2021-12-21

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