CN109531838B - 芯片的制造方法 - Google Patents

芯片的制造方法 Download PDF

Info

Publication number
CN109531838B
CN109531838B CN201811080404.0A CN201811080404A CN109531838B CN 109531838 B CN109531838 B CN 109531838B CN 201811080404 A CN201811080404 A CN 201811080404A CN 109531838 B CN109531838 B CN 109531838B
Authority
CN
China
Prior art keywords
workpiece
modified layer
chip
laser beam
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201811080404.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN109531838A (zh
Inventor
淀良彰
赵金艳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of CN109531838A publication Critical patent/CN109531838A/zh
Application granted granted Critical
Publication of CN109531838B publication Critical patent/CN109531838B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/06—Grinders for cutting-off
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/06—Grinders for cutting-off
    • B24B27/0675—Grinders for cutting-off methods therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN201811080404.0A 2017-09-22 2018-09-17 芯片的制造方法 Active CN109531838B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017182986A JP6896344B2 (ja) 2017-09-22 2017-09-22 チップの製造方法
JP2017-182986 2017-09-22

Publications (2)

Publication Number Publication Date
CN109531838A CN109531838A (zh) 2019-03-29
CN109531838B true CN109531838B (zh) 2021-12-21

Family

ID=65838977

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811080404.0A Active CN109531838B (zh) 2017-09-22 2018-09-17 芯片的制造方法

Country Status (4)

Country Link
JP (1) JP6896344B2 (enExample)
KR (1) KR102578958B1 (enExample)
CN (1) CN109531838B (enExample)
TW (1) TWI770280B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI733604B (zh) * 2020-06-10 2021-07-11 財團法人工業技術研究院 玻璃工件雷射處理系統及方法
CN118002911A (zh) * 2024-03-12 2024-05-10 海目星激光科技集团股份有限公司 硅片激光加工设备和方法

Citations (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1590007A (zh) * 2003-09-01 2005-03-09 株式会社东芝 激光加工装置和方法、加工掩模、半导体装置及制造方法
JP2007019379A (ja) * 2005-07-11 2007-01-25 Disco Abrasive Syst Ltd ウェーハの加工方法
CN1967805A (zh) * 2005-11-16 2007-05-23 株式会社电装 半导体器件和半导体基板切分方法
CN101073145A (zh) * 2004-12-08 2007-11-14 雷射先进科技株式会社 被分割体的分割起点形成方法、被分割体的分割方法以及用脉冲激光加工被加工体的加工方法
CN101146642A (zh) * 2005-03-22 2008-03-19 浜松光子学株式会社 激光加工方法
CN102024753A (zh) * 2009-09-10 2011-04-20 株式会社迪思科 被加工物的激光加工方法
CN102326232A (zh) * 2009-02-25 2012-01-18 日亚化学工业株式会社 半导体元件的制造方法
JP2012054275A (ja) * 2010-08-31 2012-03-15 Disco Abrasive Syst Ltd ウエーハの加工方法
CN102626835A (zh) * 2011-02-04 2012-08-08 三星钻石工业股份有限公司 激光刻划方法以及激光加工装置
CN103177943A (zh) * 2011-12-26 2013-06-26 株式会社迪思科 晶片加工方法
JP2013152987A (ja) * 2012-01-24 2013-08-08 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2013236001A (ja) * 2012-05-10 2013-11-21 Disco Abrasive Syst Ltd 板状物の分割方法
JP2014199834A (ja) * 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
CN105665947A (zh) * 2014-12-04 2016-06-15 株式会社迪思科 晶片的生成方法
CN105750742A (zh) * 2015-01-06 2016-07-13 株式会社迪思科 晶片的生成方法
CN106057737A (zh) * 2015-04-15 2016-10-26 株式会社迪思科 薄板的分离方法
CN106216858A (zh) * 2015-06-02 2016-12-14 株式会社迪思科 晶片的生成方法
CN106328778A (zh) * 2016-09-14 2017-01-11 中国科学院半导体研究所 隐形切割制备正、倒和倒梯形台状衬底的led芯片的方法
CN106469679A (zh) * 2015-08-18 2017-03-01 株式会社迪思科 晶片的加工方法
CN106914697A (zh) * 2011-01-13 2017-07-04 浜松光子学株式会社 激光加工方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5939769B2 (ja) * 1981-03-27 1984-09-26 昭和情報機器株式会社 入力装置
JP3408805B2 (ja) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
JP4659300B2 (ja) * 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
US20060030156A1 (en) * 2004-08-05 2006-02-09 Applied Materials, Inc. Abrasive conductive polishing article for electrochemical mechanical polishing
JP5791866B2 (ja) 2009-03-06 2015-10-07 株式会社ディスコ ワーク分割装置
KR20130033114A (ko) * 2011-09-26 2013-04-03 주식회사 이오테크닉스 레이저 가공방법
JP5939769B2 (ja) 2011-11-11 2016-06-22 株式会社ディスコ 板状物の加工方法
JP2014236034A (ja) * 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法
US9236284B2 (en) * 2014-01-31 2016-01-12 Applied Materials, Inc. Cooled tape frame lift and low contact shadow ring for plasma heat isolation
CN105171235B (zh) * 2014-06-23 2018-06-01 大族激光科技产业集团股份有限公司 一种双焦点激光微加工装置及其加工方法
JP6472347B2 (ja) * 2015-07-21 2019-02-20 株式会社ディスコ ウエーハの薄化方法
KR102077667B1 (ko) * 2015-08-10 2020-02-14 쌩-고벵 글래스 프랑스 박형 유리 층의 절단 방법
JP6504977B2 (ja) * 2015-09-16 2019-04-24 株式会社ディスコ ウエーハの加工方法
JP6605278B2 (ja) * 2015-09-29 2019-11-13 浜松ホトニクス株式会社 レーザ加工方法
JP2017107903A (ja) * 2015-12-07 2017-06-15 株式会社ディスコ ウェーハの加工方法

Patent Citations (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1590007A (zh) * 2003-09-01 2005-03-09 株式会社东芝 激光加工装置和方法、加工掩模、半导体装置及制造方法
CN101073145A (zh) * 2004-12-08 2007-11-14 雷射先进科技株式会社 被分割体的分割起点形成方法、被分割体的分割方法以及用脉冲激光加工被加工体的加工方法
CN101146642A (zh) * 2005-03-22 2008-03-19 浜松光子学株式会社 激光加工方法
JP2007019379A (ja) * 2005-07-11 2007-01-25 Disco Abrasive Syst Ltd ウェーハの加工方法
CN1967805A (zh) * 2005-11-16 2007-05-23 株式会社电装 半导体器件和半导体基板切分方法
CN102326232A (zh) * 2009-02-25 2012-01-18 日亚化学工业株式会社 半导体元件的制造方法
CN102024753A (zh) * 2009-09-10 2011-04-20 株式会社迪思科 被加工物的激光加工方法
JP2012054275A (ja) * 2010-08-31 2012-03-15 Disco Abrasive Syst Ltd ウエーハの加工方法
CN106914697A (zh) * 2011-01-13 2017-07-04 浜松光子学株式会社 激光加工方法
CN102626835A (zh) * 2011-02-04 2012-08-08 三星钻石工业股份有限公司 激光刻划方法以及激光加工装置
CN103177943A (zh) * 2011-12-26 2013-06-26 株式会社迪思科 晶片加工方法
JP2013152987A (ja) * 2012-01-24 2013-08-08 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2013236001A (ja) * 2012-05-10 2013-11-21 Disco Abrasive Syst Ltd 板状物の分割方法
JP2014199834A (ja) * 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
CN105665947A (zh) * 2014-12-04 2016-06-15 株式会社迪思科 晶片的生成方法
CN105750742A (zh) * 2015-01-06 2016-07-13 株式会社迪思科 晶片的生成方法
CN106057737A (zh) * 2015-04-15 2016-10-26 株式会社迪思科 薄板的分离方法
CN106216858A (zh) * 2015-06-02 2016-12-14 株式会社迪思科 晶片的生成方法
CN106469679A (zh) * 2015-08-18 2017-03-01 株式会社迪思科 晶片的加工方法
CN106328778A (zh) * 2016-09-14 2017-01-11 中国科学院半导体研究所 隐形切割制备正、倒和倒梯形台状衬底的led芯片的方法

Also Published As

Publication number Publication date
JP2019061980A (ja) 2019-04-18
KR20190034085A (ko) 2019-04-01
TW201916138A (zh) 2019-04-16
JP6896344B2 (ja) 2021-06-30
TWI770280B (zh) 2022-07-11
KR102578958B1 (ko) 2023-09-14
CN109531838A (zh) 2019-03-29

Similar Documents

Publication Publication Date Title
CN108987341B (zh) 芯片的制造方法
CN109531838B (zh) 芯片的制造方法
JP6925720B2 (ja) チップの製造方法
JP6851691B2 (ja) チップの製造方法
JP6925721B2 (ja) チップの製造方法
JP6851690B2 (ja) チップの製造方法
JP7058905B2 (ja) チップの製造方法
CN110473831B (zh) 芯片的制造方法
JP2019040910A (ja) チップの製造方法
JP6851692B2 (ja) チップの製造方法
JP6903379B2 (ja) チップの製造方法
JP6918423B2 (ja) チップの製造方法
JP6918424B2 (ja) チップの製造方法
JP2019040914A (ja) チップの製造方法
JP6903378B2 (ja) チップの製造方法
JP6925722B2 (ja) チップの製造方法
JP6918422B2 (ja) チップの製造方法
JP2019197860A (ja) チップの製造方法
JP2019197862A (ja) チップの製造方法
JP2019197864A (ja) チップの製造方法
JP2019197859A (ja) チップの製造方法
JP2019197863A (ja) チップの製造方法
JP2019197861A (ja) チップの製造方法
JP2019038703A (ja) チップの製造方法
JP2019040912A (ja) チップの製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant