JP6891847B2 - 研磨ヘッド及びウェーハの研磨方法 - Google Patents
研磨ヘッド及びウェーハの研磨方法 Download PDFInfo
- Publication number
- JP6891847B2 JP6891847B2 JP2018072874A JP2018072874A JP6891847B2 JP 6891847 B2 JP6891847 B2 JP 6891847B2 JP 2018072874 A JP2018072874 A JP 2018072874A JP 2018072874 A JP2018072874 A JP 2018072874A JP 6891847 B2 JP6891847 B2 JP 6891847B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- polishing
- polishing head
- mpa
- incompressible fluid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000005498 polishing Methods 0.000 title claims description 130
- 238000000034 method Methods 0.000 title claims description 18
- 235000012431 wafers Nutrition 0.000 title 1
- 239000012530 fluid Substances 0.000 claims description 70
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- 239000000919 ceramic Substances 0.000 claims description 16
- 239000004744 fabric Substances 0.000 claims description 15
- 229920003169 water-soluble polymer Polymers 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 230000000052 comparative effect Effects 0.000 description 13
- 239000004372 Polyvinyl alcohol Substances 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 11
- 229920002451 polyvinyl alcohol Polymers 0.000 description 11
- 238000006073 displacement reaction Methods 0.000 description 8
- 238000005538 encapsulation Methods 0.000 description 8
- 125000006850 spacer group Chemical group 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 210000002445 nipple Anatomy 0.000 description 6
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 238000013441 quality evaluation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
PVA濃度に対する粘度の変化を確認し、研磨ヘッドに封入する流体のPVA濃度は6w%(10mPa・s)(実施例1)と12w%(90mPa・s)(実施例2)と20w%(1200mPa・s)(実施例3)の3水準とした。
[研磨加工条件]
装置:不二越機械製片面研磨機
加工ウェーハ: 直径300mm P−品<100>シリコンウェーハ
研磨布: 二次研磨クロス 不織布
研磨剤: 二次研磨スラリー KOHベースコロイダルシリカ
空間部7に水8’が封入された図3に示す従来の研磨ヘッドを用いた以外、実施例1−3と同様の条件でウェーハ研磨加工を行った。
粘度90mPa・sの流体を封入した本発明の研磨ヘッド(実施例4)と従来の粘度が0.890mPa・sの水封入研磨ヘッド(比較例2)を用いてウェーハ研磨加工を各研磨ヘッド10枚行い、研磨加工前後でのΔESFQR(max)とΔSFQR(max)を比較した。
1、1’…研磨ヘッド、 2…セラミクスリング、 3…バッキングパッド、
4…ガイドリング、 5…テンプレート、 6…裏板、 7…空間部、
8…非圧縮性流体、 8’…水、 9…ウェーハ加圧部、
10a、10b…カプラー、 11a、11b…ニップル、
12…調整用スペーサー、 13…ベース、 14…クランプ治具、
15…圧力計、 16a、16b…バルブ、 17…ウェーハWと同じ厚さの調整板、
18a、18b…貫通孔、 19…流体封入装置、 20…研磨剤供給機構、
21…研磨剤、 22…研磨布、 23…定盤、 24…研磨装置。
Claims (3)
- 少なくとも、環状のセラミクスリングと、
該セラミクスリングに貼り付けられ、バッキングパッド及びガイドリングが一体となったテンプレートと、
前記セラミクスリングに結合され、前記バッキングパッドと前記セラミクスリングとともに空間部を形成する裏板とを具備し、
前記バッキングパッドの下面部にウェーハの裏面を保持し、該ウェーハの表面を定盤上に貼り付けられた研磨布に摺接させて研磨する研磨ヘッドであって、
前記空間部に非圧縮性流体が封入され、該非圧縮性流体の粘度が10mPa・s以上1200mPa・s以下のものであることを特徴とする研磨ヘッド。 - 前記非圧縮性流体は、水に水溶性ポリマーを溶解したものであることを特徴とする請求項1に記載の研磨ヘッド。
- 請求項1又は請求項2に記載の研磨ヘッドを用いたウェーハの研磨方法であって、
前記定盤上に貼り付けられた前記研磨布上に研磨剤を供給し、
前記研磨ヘッドで保持された前記ウェーハの表面を、前記研磨布に摺接させて研磨することを特徴とするウェーハの研磨方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018072874A JP6891847B2 (ja) | 2018-04-05 | 2018-04-05 | 研磨ヘッド及びウェーハの研磨方法 |
KR1020207028295A KR102639141B1 (ko) | 2018-04-05 | 2019-02-27 | 연마헤드 및 웨이퍼의 연마방법 |
CN201980019857.9A CN111971146A (zh) | 2018-04-05 | 2019-02-27 | 研磨头及晶圆的研磨方法 |
PCT/JP2019/007421 WO2019193877A1 (ja) | 2018-04-05 | 2019-02-27 | 研磨ヘッド及びウェーハの研磨方法 |
DE112019001200.2T DE112019001200T5 (de) | 2018-04-05 | 2019-02-27 | Polierkopf und Wafer-Polierverfahren |
US17/041,619 US20210023673A1 (en) | 2018-04-05 | 2019-02-27 | Polishing head and wafer polishing method |
TW108107563A TW201943494A (zh) | 2018-04-05 | 2019-03-07 | 研磨頭及晶圓的研磨方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018072874A JP6891847B2 (ja) | 2018-04-05 | 2018-04-05 | 研磨ヘッド及びウェーハの研磨方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2019181594A JP2019181594A (ja) | 2019-10-24 |
JP2019181594A5 JP2019181594A5 (ja) | 2020-10-22 |
JP6891847B2 true JP6891847B2 (ja) | 2021-06-18 |
Family
ID=68100301
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018072874A Active JP6891847B2 (ja) | 2018-04-05 | 2018-04-05 | 研磨ヘッド及びウェーハの研磨方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20210023673A1 (ja) |
JP (1) | JP6891847B2 (ja) |
KR (1) | KR102639141B1 (ja) |
CN (1) | CN111971146A (ja) |
DE (1) | DE112019001200T5 (ja) |
TW (1) | TW201943494A (ja) |
WO (1) | WO2019193877A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102592009B1 (ko) * | 2019-04-05 | 2023-10-19 | 가부시키가이샤 사무코 | 연마 헤드, 연마 장치 및 반도체 웨이퍼의 제조 방법 |
Family Cites Families (21)
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JP2758152B2 (ja) * | 1995-04-10 | 1998-05-28 | 松下電器産業株式会社 | 被研磨基板の保持装置及び基板の研磨方法 |
TW400567B (en) * | 1995-04-10 | 2000-08-01 | Matsushita Electric Ind Co Ltd | The polishing device and its polishing method for the substrate |
TW375550B (en) * | 1997-06-19 | 1999-12-01 | Komatsu Denshi Kinzoku Kk | Polishing apparatus for semiconductor wafer |
US6402978B1 (en) * | 1999-05-06 | 2002-06-11 | Mpm Ltd. | Magnetic polishing fluids for polishing metal substrates |
US20020151260A1 (en) | 2001-04-12 | 2002-10-17 | Crevasse Annette Margaret | Carrier head for a chemical mechanical polishing apparatus |
US6558236B2 (en) * | 2001-06-26 | 2003-05-06 | Applied Materials, Inc. | Method and apparatus for chemical mechanical polishing |
US6592437B1 (en) * | 2001-12-26 | 2003-07-15 | Lam Research Corporation | Active gimbal ring with internal gel and methods for making same |
US7004817B2 (en) * | 2002-08-23 | 2006-02-28 | Micron Technology, Inc. | Carrier assemblies, planarizing apparatuses including carrier assemblies, and methods for planarizing micro-device workpieces |
US7838482B2 (en) * | 2003-01-31 | 2010-11-23 | Hitachi Chemical Co. Ltd. | CMP polishing compound and polishing method |
JP2007266191A (ja) * | 2006-03-28 | 2007-10-11 | Nec Electronics Corp | ウェハ処理方法 |
JP4374370B2 (ja) * | 2006-10-27 | 2009-12-02 | 信越半導体株式会社 | 研磨ヘッド及び研磨装置 |
US7335088B1 (en) * | 2007-01-16 | 2008-02-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMP system with temperature-controlled polishing head |
CN102131617B (zh) | 2008-08-29 | 2016-06-01 | 信越半导体股份有限公司 | 研磨头及研磨装置 |
JP2012035393A (ja) | 2010-08-11 | 2012-02-23 | Fujikoshi Mach Corp | 研磨装置 |
WO2013001719A1 (ja) | 2011-06-29 | 2013-01-03 | 信越半導体株式会社 | 研磨ヘッド及び研磨装置 |
JP5807580B2 (ja) * | 2012-02-15 | 2015-11-10 | 信越半導体株式会社 | 研磨ヘッド及び研磨装置 |
US8845394B2 (en) * | 2012-10-29 | 2014-09-30 | Wayne O. Duescher | Bellows driven air floatation abrading workholder |
JP6145334B2 (ja) * | 2013-06-28 | 2017-06-07 | 株式会社荏原製作所 | 基板処理装置 |
US20150298284A1 (en) * | 2014-04-21 | 2015-10-22 | Applied Materials, Inc. | Polishing System with Front Side Pressure Control |
JP6283957B2 (ja) * | 2015-04-16 | 2018-02-28 | 信越半導体株式会社 | 研磨ヘッドの製造方法及び研磨ヘッド、並びに研磨装置 |
MY186276A (en) * | 2015-05-13 | 2021-07-02 | Shinetsu Chemical Co | Method for producing substrates |
-
2018
- 2018-04-05 JP JP2018072874A patent/JP6891847B2/ja active Active
-
2019
- 2019-02-27 DE DE112019001200.2T patent/DE112019001200T5/de active Pending
- 2019-02-27 US US17/041,619 patent/US20210023673A1/en not_active Abandoned
- 2019-02-27 CN CN201980019857.9A patent/CN111971146A/zh active Pending
- 2019-02-27 KR KR1020207028295A patent/KR102639141B1/ko active IP Right Grant
- 2019-02-27 WO PCT/JP2019/007421 patent/WO2019193877A1/ja active Application Filing
- 2019-03-07 TW TW108107563A patent/TW201943494A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
DE112019001200T5 (de) | 2020-12-03 |
WO2019193877A1 (ja) | 2019-10-10 |
KR20200133752A (ko) | 2020-11-30 |
CN111971146A (zh) | 2020-11-20 |
JP2019181594A (ja) | 2019-10-24 |
US20210023673A1 (en) | 2021-01-28 |
KR102639141B1 (ko) | 2024-02-22 |
TW201943494A (zh) | 2019-11-16 |
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