JP6879765B2 - レジスト親水化処理剤 - Google Patents
レジスト親水化処理剤 Download PDFInfo
- Publication number
- JP6879765B2 JP6879765B2 JP2017023181A JP2017023181A JP6879765B2 JP 6879765 B2 JP6879765 B2 JP 6879765B2 JP 2017023181 A JP2017023181 A JP 2017023181A JP 2017023181 A JP2017023181 A JP 2017023181A JP 6879765 B2 JP6879765 B2 JP 6879765B2
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- Prior art keywords
- resist
- coating film
- component
- resist coating
- water
- Prior art date
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- 238000000576 coating method Methods 0.000 claims description 97
- 239000011248 coating agent Substances 0.000 claims description 95
- 239000003795 chemical substances by application Substances 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 51
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 37
- 125000004432 carbon atom Chemical group C* 0.000 claims description 31
- PEDCQBHIVMGVHV-UHFFFAOYSA-N glycerol group Chemical group OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 125000002252 acyl group Chemical group 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 125000000217 alkyl group Chemical group 0.000 claims description 9
- 125000003342 alkenyl group Chemical group 0.000 claims description 8
- 235000011187 glycerol Nutrition 0.000 claims description 8
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 8
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 6
- 238000006116 polymerization reaction Methods 0.000 claims description 6
- 239000004615 ingredient Substances 0.000 claims description 5
- 238000001459 lithography Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 229920000223 polyglycerol Polymers 0.000 claims 1
- -1 2-hydroxyethyl (N, N-dimethyl-N-lauryl) ammonium hydroxide Chemical compound 0.000 description 30
- 238000005498 polishing Methods 0.000 description 16
- 239000000243 solution Substances 0.000 description 14
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 10
- 238000005406 washing Methods 0.000 description 8
- 238000001035 drying Methods 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 125000001931 aliphatic group Chemical group 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 239000012670 alkaline solution Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 150000005690 diesters Chemical class 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- 229920001661 Chitosan Polymers 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 239000004115 Sodium Silicate Substances 0.000 description 2
- 229920002125 Sokalan® Polymers 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004584 polyacrylic acid Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 2
- 229910052911 sodium silicate Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 229920003169 water-soluble polymer Polymers 0.000 description 2
- GVNVAWHJIKLAGL-UHFFFAOYSA-N 2-(cyclohexen-1-yl)cyclohexan-1-one Chemical compound O=C1CCCCC1C1=CCCCC1 GVNVAWHJIKLAGL-UHFFFAOYSA-N 0.000 description 1
- 125000004974 2-butenyl group Chemical group C(C=CC)* 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- FUGYGGDSWSUORM-UHFFFAOYSA-N 4-hydroxystyrene Chemical compound OC1=CC=C(C=C)C=C1 FUGYGGDSWSUORM-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- 101150065749 Churc1 gene Proteins 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- CTKINSOISVBQLD-UHFFFAOYSA-N Glycidol Chemical compound OCC1CO1 CTKINSOISVBQLD-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 102100038239 Protein Churchill Human genes 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 1
- ZUQAPLKKNAQJAU-UHFFFAOYSA-N acetylenediol Chemical compound OC#CO ZUQAPLKKNAQJAU-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 238000012644 addition polymerization Methods 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 150000004996 alkyl benzenes Chemical class 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 150000001350 alkyl halides Chemical class 0.000 description 1
- 125000005211 alkyl trimethyl ammonium group Chemical group 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000003236 benzoyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C(*)=O 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 125000004063 butyryl group Chemical group O=C([*])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- UOCJDOLVGGIYIQ-PBFPGSCMSA-N cefatrizine Chemical group S([C@@H]1[C@@H](C(N1C=1C(O)=O)=O)NC(=O)[C@H](N)C=2C=CC(O)=CC=2)CC=1CSC=1C=NNN=1 UOCJDOLVGGIYIQ-PBFPGSCMSA-N 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 235000010980 cellulose Nutrition 0.000 description 1
- 125000000392 cycloalkenyl group Chemical group 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000004210 cyclohexylmethyl group Chemical group [H]C([H])(*)C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 125000000640 cyclooctyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 239000012972 dimethylethanolamine Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 239000008233 hard water Substances 0.000 description 1
- 125000006038 hexenyl group Chemical group 0.000 description 1
- 238000004128 high performance liquid chromatography Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000008235 industrial water Substances 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- GNVRJGIVDSQCOP-UHFFFAOYSA-N n-ethyl-n-methylethanamine Chemical compound CCN(C)CC GNVRJGIVDSQCOP-UHFFFAOYSA-N 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001038 naphthoyl group Chemical group C1(=CC=CC2=CC=CC=C12)C(=O)* 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 125000002811 oleoyl group Chemical group O=C([*])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])/C([H])=C([H])\C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001117 oleyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])/C([H])=C([H])\C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000636 poly(norbornene) polymer Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 1
- 125000001501 propionyl group Chemical group O=C([*])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000012312 sodium hydride Substances 0.000 description 1
- 229910000104 sodium hydride Inorganic materials 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- 239000008234 soft water Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 125000003696 stearoyl group Chemical group O=C([*])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000008399 tap water Substances 0.000 description 1
- 235000020679 tap water Nutrition 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D171/00—Coating compositions based on polyethers obtained by reactions forming an ether link in the main chain; Coating compositions based on derivatives of such polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Description
[1]基板上にフォトレジストを塗布して、レジスト塗膜を形成する。
[2]レジスト塗膜に、回路のパターンを描画したフォトマスクを介して光を照射して回路パターンを焼き付ける。
[3]現像液に浸して、パターン部分以外の部分のレジスト塗膜を除去する。
[4]現像後に残留したレジスト塗膜を硬化させてマスクを形成する。
[5]得られたマスクを利用して、基板をエッチングする。
本発明の他の目的は、レジスト塗膜に対する濡れ性に優れ、現像ムラの発生を抑制することができ、且つ現像後の水洗・乾燥の際にレジストパターンが倒壊することを抑制することができる現像液を提供することにある。
本発明の他の目的は、研磨屑の付着や、現像ムラを抑制して、高精度の配線パターンを有する半導体素子を歩留まり良く製造する方法を提供することにある。
成分(A):下記式(a)で表される、ポリグリセリン又はその誘導体
RaO−(C3H6O2)n−H (a)
(式中、Raは、水素原子、ヒドロキシル基を有していてもよい炭素数1〜18の炭化水素基、又は炭素数2〜24のアシル基を示す。nは括弧内に示されるグリセリン単位の平均重合度を示し、2〜60の整数である)
成分(B):水
[1]基板上のレジスト塗膜の表面を、前記レジスト親水化処理剤を用いて親水化してから現像する、又は前記レジスト親水化処理剤を含む現像液を用いて現像する
[2]レジスト塗膜を備えた基板の周縁部の荒れを、前記レジスト塗膜を上記レジスト親水化処理剤を用いて親水化した後、レジスト塗膜に水を供給しつつ、研磨する
また、本発明のレジスト親水化処理剤を含有する現像液は、レジスト塗膜に対する濡れ性が高く、現像ムラの発生を抑制することができ、現像後の水洗・乾燥の際には界面張力によってレジストパターンが倒壊することを防止することができる。
そして、半導体素子の製造において、本発明のレジスト親水化処理剤を使用して基板上のレジスト塗膜の表面を親水化してから現像する、又は本発明のレジスト親水化処理剤を含む現像液を用いて現像すれば、現像ムラの発生を抑制することができ、現像後の水洗・乾燥の際には界面張力によってレジストパターンが倒壊することを防止することができる。また、レジスト塗膜を備えた基板の周縁部の荒れを、前記レジスト塗膜を本発明のレジスト親水化処理剤を用いて親水化した後、レジスト塗膜に水を供給しつつ研磨すれば、研磨屑がレジスト塗膜に付着することを抑制することができる。そのため、従来、前記研磨屑の付着によって引き起こされていた配線の短絡や電気抵抗の上昇を防止することができ、歩留まりの低下を防止し、高精度の半導体素子を効率よく製造することができる。
本発明のレジスト親水化処理剤は、下記成分(A)、及び成分(B)を少なくとも含有する。
成分(A):式(a)で表される、ポリグリセリン又はその誘導体
成分(B):水
本発明のレジスト親水化処理剤は、下記式(a)で表されるポリグリセリン又はその誘導体を必須成分とする。
RaO−(C3H6O2)n−H (a)
(式中、Raは、水素原子、ヒドロキシル基を有していてもよい炭素数1〜18の炭化水素基、又は炭素数2〜24のアシル基を示す。nはグリセリン単位の平均重合度を示し、2〜60の整数である)
−CH2−CHOH−CH2O− (a-1)
−CH(CH2OH)CH2O− (a-2)
HO−(C3H6O2)10−H
HO−(C3H6O2)20−H
HO−(C3H6O2)30−H
HO−(C3H6O2)40−H
CH2=CHCH2−O−(C3H6O2)6−H
C12H25O−(C3H6O2)4−H
C12H25O−(C3H6O2)10−H
C18H37O−(C3H6O2)4−H
C18H37O−(C3H6O2)10−H
(1)RaOH(Raは前記に同じ)に2,3−エポキシ−1−プロパノールを付加重合する方法
(2)ポリグリセリンに、アルキルハライド(例えば、Ra1X:Xはハロゲン原子を示す。Ra1は炭素数1〜18の炭化水素基を示す)、カルボン酸(例えば、Ra2OH:Ra2は炭素数2〜24のアシル基を示す)、又はその誘導体(例えば、カルボン酸ハライド、酸無水物等)を縮合させる方法
本発明のレジスト親水化処理剤は水を必須成分とする。水としては、硬水、軟水の何れでもよく、例えば、工業用水、水道水、イオン交換水、蒸留水等を使用することができる。
本発明のレジスト親水化処理剤は成分(A)と成分(B)とを必須成分とする。本発明のレジスト親水化処理剤は成分(A)、成分(B)以外にも他の成分を含有していてもよい。
本発明のレジスト現像液は、上記レジスト親水化処理剤を含むことを特徴とする。
本発明の半導体素子の製造方法は、基板上のレジスト塗膜に露光及び現像を施してリソグラフィーのためのレジストパターンを形成し、得られたレジストパターンを利用して基板をエッチングする工程を経て、半導体素子を製造する方法(すなわち、フォトリソグラフィーによって半導体素子を製造する方法)であって、下記処理[1]及び/又は[2]を施すことを特徴とする。
[1]基板上のレジスト塗膜の表面を、本発明のレジスト親水化処理剤を用いて親水化してから現像する、又は本発明のレジスト親水化処理剤を含む現像液を用いて現像する
[2]レジスト塗膜を備えた基板の周縁部の荒れを、前記レジスト塗膜を本発明のレジスト親水化処理剤を用いて親水化した後、レジスト塗膜に水を供給しつつ、研磨する
表1に記載の処方に従って各成分を配合して、レジスト親水化処理剤を得た。得られたレジスト親水化処理剤について、レジスト塗膜表面の親水化力、及びレジスト塗膜の劣化防止性を以下の方法で評価した。
実施例及び比較例で得られたレジスト親水化処理剤中に、前記試験片を25℃で10秒間、撹拌せずに浸漬し、その後、超純水で3分間流水リンスを行った。リンス後、試験片を引き上げ、レジスト塗膜表面の濡れ性を目視で観察し、下記基準で親水化力を評価した。また処理前後の膜厚減少量を光学干渉式膜厚計により測定し、レジスト塗膜へのダメージを評価した。尚、レジスト膜厚の減少量が少ない方が、レジスト塗膜へのダメージが小さく、レジスト塗膜の劣化防止性に優れることを示す。結果を表1に示す。
<評価基準>
○:試験片を引き上げても、試験片表面が濡れたままの状態である
×:試験片を引き上げると、直ちに水がはじかれるか又は徐々に水がはじかれる状態である
a-1:ポリ(40)グリセリン、商品名「PGL XPW」、(株)ダイセル製
b-1:TMAH
b-2:2−ヒドロキシエチル−(N,N−ジメチル−N−ラウリル)アンモニウムハイドロオキサイド
b-3:2−ヒドロキシエチル−(N,N−ジメチル−N−ミリスチル)アンモニウムハイドロオキサイド
b-4:2−ヒドロキシエチル−(N,N−ジメチル−N−ステアリル)アンモニウムハイドロオキサイド
Claims (5)
- 下記成分(A)、及び成分(B)を少なくとも含有するポジ型レジスト親水化処理剤。
成分(A):下記式(a’)で表される、ポリグリセリン又はその誘導体
Ra ’O−(C3H6O2)n ’−H (a’)
(式中、Ra ’は、水素原子、ヒドロキシル基を有していてもよい炭素数1〜18のアルキル基、又はヒドロキシル基を有していてもよい炭素数2〜18のアルケニル基、又は炭素数2〜24のアシル基を示す。n’は括弧内に示されるグリセリン単位の平均重合度を示し、15〜60の整数である)
成分(B):水 - 下記成分(A)、及び成分(B)を少なくとも含有するポジ型レジスト親水化処理剤。
成分(A):下記式(a”)で表されるポリグリセリン
R a ”O−(C 3 H 6 O 2 ) n ”−H (a”)
(式中、R a ”は水素原子を示す。n”は括弧内に示されるグリセリン単位の平均重合度を示し、10〜50の整数である)
成分(B):水 - 成分(A)の含有量が、ポジ型レジスト親水化処理剤全量の0.1重量%以上である、請求項1又は2に記載のポジ型レジスト親水化処理剤。
- 請求項1〜3の何れか1項に記載のポジ型レジスト親水化処理剤を含む、ポジ型レジスト現像液。
- 基板上のレジスト塗膜に露光及び現像を施してリソグラフィーのためのレジストパターンを形成し、得られたレジストパターンを利用して基板をエッチングする工程を経て、半導体素子を製造する方法であって、下記処理[1]及び[2]を施すことを特徴とする半導体素子の製造方法。
[1]基板上のレジスト塗膜の表面を、下記レジスト親水化処理剤を用いて親水化してから現像する、又は下記レジスト親水化処理剤を含む現像液を用いて現像する
[2]レジスト塗膜を備えた基板の周縁部の荒れを、前記レジスト塗膜を下記レジスト親水化処理剤を用いて親水化した後、レジスト塗膜に水を供給しつつ、研磨する
レジスト親水化処理剤:下記成分(A)、及び成分(B)を少なくとも含有する。
成分(A):下記式(a)で表される、ポリグリセリン又はその誘導体
R a O−(C 3 H 6 O 2 ) n −H (a)
(式中、R a は、水素原子、ヒドロキシル基を有していてもよい炭素数1〜18の炭化水素基、又は炭素数2〜24のアシル基を示す。nは括弧内に示されるグリセリン単位の平均重合度を示し、2〜60の整数である)
成分(B):水
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JP2017023181A JP6879765B2 (ja) | 2017-02-10 | 2017-02-10 | レジスト親水化処理剤 |
KR1020180014879A KR102540717B1 (ko) | 2017-02-10 | 2018-02-07 | 레지스트 친수화 처리제 |
TW107104435A TWI745542B (zh) | 2017-02-10 | 2018-02-08 | 組成物對於正型光阻親水化處理劑之用途、組成物對於正型光阻顯影劑之用途、及半導體元件之製造方法 |
CN201810128003.1A CN108415226B (zh) | 2017-02-10 | 2018-02-08 | 抗蚀剂亲水化处理剂 |
US15/893,079 US10466592B2 (en) | 2017-02-10 | 2018-02-09 | Agent for resist hydrophilization treatment |
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JP7262233B2 (ja) * | 2019-01-30 | 2023-04-21 | 株式会社ダイセル | 半導体ウェハ表面保護剤 |
US20210292602A1 (en) * | 2019-03-22 | 2021-09-23 | Daicel Corporation | Polishing composition for semiconductor wiring |
WO2020196199A1 (ja) * | 2019-03-22 | 2020-10-01 | 株式会社ダイセル | 半導体ウエハ表面の親水化処理液 |
CN110391135B (zh) * | 2019-08-08 | 2022-02-08 | 武汉新芯集成电路制造有限公司 | 去除光刻胶残留的方法及半导体器件的制造方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3586504A (en) * | 1969-10-24 | 1971-06-22 | Eastman Kodak Co | Photoresist developers and methods |
US3637774A (en) * | 1969-11-03 | 1972-01-25 | Vigen K Babayan | Process for preparation and purification of polyglycerols and esters thereof |
US3801327A (en) * | 1970-07-02 | 1974-04-02 | Ibm | O-dithialane-photosensitive compositions |
US4761245A (en) * | 1987-01-27 | 1988-08-02 | Olin Corporation | Etching solutions containing ammonium fluoride and an alkylphenol polyglycidol ether surfactant |
US5244960A (en) * | 1990-04-02 | 1993-09-14 | Ppg Industries, Inc. | Thermosetting waterborne coating compositions prepared from aqueous emulsion polymers |
JP3475314B2 (ja) | 1995-10-12 | 2003-12-08 | 大日本印刷株式会社 | レジストパターン形成方法 |
JP2002107953A (ja) | 2000-09-28 | 2002-04-10 | Mitsubishi Paper Mills Ltd | 平版印刷版の現像処理方法 |
JP4284215B2 (ja) | 2004-03-24 | 2009-06-24 | 株式会社東芝 | 基板処理方法 |
JP5036996B2 (ja) * | 2005-10-31 | 2012-09-26 | 東京応化工業株式会社 | 洗浄液および洗浄方法 |
JP5053592B2 (ja) | 2006-08-10 | 2012-10-17 | 関東化学株式会社 | ポジ型レジスト処理液組成物及び現像液 |
EP2002987B1 (en) * | 2007-06-13 | 2014-04-23 | Agfa Graphics N.V. | A method for treating a lithographic printing plate |
JP2009099819A (ja) * | 2007-10-18 | 2009-05-07 | Daicel Chem Ind Ltd | Cmp用研磨組成物及び該cmp用研磨組成物を使用したデバイスウェハの製造方法 |
US7906571B2 (en) * | 2008-10-28 | 2011-03-15 | Archer Daniels Midland Company | Waterborne film-forming compositions containing reactive surfactants and/or humectants |
US8999071B2 (en) * | 2011-10-26 | 2015-04-07 | Dow Global Technologies Llc | Surfactants derived from oligoglycerols |
KR102004570B1 (ko) * | 2012-02-21 | 2019-07-26 | 히타치가세이가부시끼가이샤 | 연마제, 연마제 세트 및 기체의 연마 방법 |
US8900802B2 (en) * | 2013-02-23 | 2014-12-02 | International Business Machines Corporation | Positive tone organic solvent developed chemically amplified resist |
JP6012871B2 (ja) * | 2013-07-18 | 2016-10-25 | 富士フイルム株式会社 | 平版印刷版原版及びその製版方法 |
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