JP6861095B2 - 反射型マスクブランク、反射型マスク及び半導体装置の製造方法 - Google Patents

反射型マスクブランク、反射型マスク及び半導体装置の製造方法 Download PDF

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Publication number
JP6861095B2
JP6861095B2 JP2017107394A JP2017107394A JP6861095B2 JP 6861095 B2 JP6861095 B2 JP 6861095B2 JP 2017107394 A JP2017107394 A JP 2017107394A JP 2017107394 A JP2017107394 A JP 2017107394A JP 6861095 B2 JP6861095 B2 JP 6861095B2
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Prior art keywords
film
phase shift
group
alloy
shift film
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Japanese (ja)
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JP2018146945A5 (https=
JP2018146945A (ja
Inventor
洋平 池邊
洋平 池邊
笑喜　勉
勉 笑喜
貴弘 尾上
貴弘 尾上
弘文 小坂井
弘文 小坂井
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Hoya Corp
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Hoya Corp
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Priority to KR1020197028297A priority Critical patent/KR102639087B1/ko
Priority to US16/490,018 priority patent/US11003068B2/en
Priority to SG11201907623RA priority patent/SG11201907623RA/en
Priority to KR1020247005441A priority patent/KR20240025717A/ko
Priority to PCT/JP2018/006054 priority patent/WO2018159392A1/ja
Priority to TW107106939A priority patent/TWI783976B/zh
Priority to TW111139214A priority patent/TWI828372B/zh
Priority to TW112149754A priority patent/TWI881609B/zh
Publication of JP2018146945A publication Critical patent/JP2018146945A/ja
Publication of JP2018146945A5 publication Critical patent/JP2018146945A5/ja
Priority to JP2021054859A priority patent/JP7263424B2/ja
Priority to US17/227,655 priority patent/US11480867B2/en
Application granted granted Critical
Publication of JP6861095B2 publication Critical patent/JP6861095B2/ja
Priority to US17/946,709 priority patent/US11880130B2/en
Priority to JP2023064906A priority patent/JP7588176B2/ja
Priority to US18/526,463 priority patent/US12135496B2/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Vapour Deposition (AREA)
JP2017107394A 2017-03-03 2017-05-31 反射型マスクブランク、反射型マスク及び半導体装置の製造方法 Active JP6861095B2 (ja)

Priority Applications (13)

Application Number Priority Date Filing Date Title
KR1020197028297A KR102639087B1 (ko) 2017-03-03 2018-02-20 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법
US16/490,018 US11003068B2 (en) 2017-03-03 2018-02-20 Reflective mask blank, reflective mask and method of manufacturing semiconductor device
SG11201907623RA SG11201907623RA (en) 2017-03-03 2018-02-20 Reflective mask blank, reflective mask and method of manufacturing semiconductor device
KR1020247005441A KR20240025717A (ko) 2017-03-03 2018-02-20 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법
PCT/JP2018/006054 WO2018159392A1 (ja) 2017-03-03 2018-02-20 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
TW111139214A TWI828372B (zh) 2017-03-03 2018-03-02 反射型光罩基底、反射型光罩及半導體裝置之製造方法
TW112149754A TWI881609B (zh) 2017-03-03 2018-03-02 反射型光罩基底、反射型光罩及半導體裝置之製造方法
TW107106939A TWI783976B (zh) 2017-03-03 2018-03-02 反射型光罩基底、反射型光罩及半導體裝置之製造方法
JP2021054859A JP7263424B2 (ja) 2017-03-03 2021-03-29 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
US17/227,655 US11480867B2 (en) 2017-03-03 2021-04-12 Reflective mask blank, reflective mask and method of manufacturing semiconductor device
US17/946,709 US11880130B2 (en) 2017-03-03 2022-09-16 Reflective mask blank, reflective mask and method of manufacturing semiconductor device
JP2023064906A JP7588176B2 (ja) 2017-03-03 2023-04-12 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
US18/526,463 US12135496B2 (en) 2017-03-03 2023-12-01 Reflective mask blank and reflective mask

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017040043 2017-03-03
JP2017040043 2017-03-03

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JP2018146945A JP2018146945A (ja) 2018-09-20
JP2018146945A5 JP2018146945A5 (https=) 2020-05-14
JP6861095B2 true JP6861095B2 (ja) 2021-04-21

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JP2021054859A Active JP7263424B2 (ja) 2017-03-03 2021-03-29 反射型マスクブランク、反射型マスク及び半導体装置の製造方法

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US (2) US11003068B2 (https=)
JP (2) JP6861095B2 (https=)
KR (1) KR102639087B1 (https=)
SG (1) SG11201907623RA (https=)
TW (1) TWI783976B (https=)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240025717A (ko) 2017-03-03 2024-02-27 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법
TWI835896B (zh) 2018-10-26 2024-03-21 美商應用材料股份有限公司 具有後側塗層的極紫外線掩模
US20220091498A1 (en) * 2019-03-13 2022-03-24 Hoya Corporation Reflection-type mask blank, reflection-type mask and method for manufacturing same, and method for manufacturing semiconductor device
JP7401356B2 (ja) * 2019-03-27 2023-12-19 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
US12107276B2 (en) 2019-09-24 2024-10-01 Lg Energy Solution, Ltd. Positive electrode for lithium-sulfur secondary battery having pattern, manufacturing method therefor, and lithium-sulfur secondary battery including same
KR102946015B1 (ko) 2019-10-29 2026-03-31 에이지씨 가부시키가이샤 반사형 마스크 블랭크 및 반사형 마스크
JP6929340B2 (ja) * 2019-11-21 2021-09-01 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体装置の製造方法
KR20220122614A (ko) * 2019-12-27 2022-09-02 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그들의 제조 방법
KR102567180B1 (ko) * 2020-04-21 2023-08-16 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크
JP7612408B2 (ja) * 2020-12-22 2025-01-14 Hoya株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法、及び半導体デバイスの製造方法
KR102837249B1 (ko) * 2021-02-25 2025-07-22 주식회사 에스앤에스텍 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크
JP7295215B2 (ja) * 2021-02-25 2023-06-20 エスアンドエス テック カンパニー リミテッド 極紫外線リソグラフィ用位相反転ブランクマスク及びフォトマスク
JP7616099B2 (ja) * 2021-03-03 2025-01-17 信越化学工業株式会社 反射型マスクブランク及びその製造方法
US12181790B2 (en) * 2021-03-03 2024-12-31 Shin-Etsu Chemical Co., Ltd. Reflective mask blank and reflective mask
US20220283491A1 (en) * 2021-03-03 2022-09-08 Shin-Etsu Chemical Co., Ltd. Reflective mask blank, and method for manufacturing thereof
JP7826305B2 (ja) 2021-05-27 2026-03-09 Hoya株式会社 マスクブランク、反射型マスク及び半導体デバイスの製造方法
JP7699970B2 (ja) 2021-06-10 2025-06-30 Hoya株式会社 マスクブランク、反射型マスク及び半導体デバイスの製造方法
WO2023008435A1 (ja) * 2021-07-30 2023-02-02 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
WO2023112767A1 (ja) * 2021-12-13 2023-06-22 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
KR20250153856A (ko) * 2021-12-13 2025-10-27 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법
WO2023190360A1 (ja) * 2022-04-01 2023-10-05 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
KR102814237B1 (ko) * 2022-06-20 2025-05-30 주식회사 에스앤에스텍 극자외선 리소그래피용 블랭크마스크 및 포토마스크
WO2024009809A1 (ja) * 2022-07-05 2024-01-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
WO2024009819A1 (ja) 2022-07-05 2024-01-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
JP7392236B1 (ja) 2022-07-05 2023-12-06 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
KR102882827B1 (ko) * 2022-10-13 2025-11-07 주식회사 에스앤에스텍 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크
JP2024119143A (ja) * 2023-02-22 2024-09-03 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体デバイスの製造方法
JPWO2024225163A1 (https=) * 2023-04-28 2024-10-31
JP2025163548A (ja) * 2024-04-17 2025-10-29 信越化学工業株式会社 反射型フォトマスクブランク、及び反射型フォトマスクの製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5233321B1 (https=) 1971-07-10 1977-08-27
CA1033487A (en) 1972-10-31 1978-06-20 Rolf Dhein Binders for low-solvent lacquer systems
JP3078163B2 (ja) * 1993-10-15 2000-08-21 キヤノン株式会社 リソグラフィ用反射型マスクおよび縮小投影露光装置
JP4458216B2 (ja) * 2000-09-01 2010-04-28 信越化学工業株式会社 フォトマスク用ブランクス及びフォトマスクの製造方法
US7282307B2 (en) * 2004-06-18 2007-10-16 Freescale Semiconductor, Inc. Reflective mask useful for transferring a pattern using extreme ultra violet (EUV) radiation and method of making the same
JP2006228766A (ja) 2005-02-15 2006-08-31 Toppan Printing Co Ltd 極端紫外線露光用マスク、マスクブランク、及び露光方法
JP5233321B2 (ja) 2008-02-27 2013-07-10 凸版印刷株式会社 極端紫外線露光用マスクブランク、極端紫外線露光用マスク、極端紫外線露光用マスクの製造方法及び極端紫外線露光用マスクを用いたパターン転写方法
JP5702920B2 (ja) * 2008-06-25 2015-04-15 Hoya株式会社 位相シフトマスクブランク、位相シフトマスクおよび位相シフトマスクブランクの製造方法
JP5266988B2 (ja) 2008-09-10 2013-08-21 凸版印刷株式会社 ハーフトーン型ｅｕｖマスク、ハーフトーン型ｅｕｖマスクブランク、ハーフトーン型ｅｕｖマスクの製造方法及びパターン転写方法
KR20120034074A (ko) * 2009-07-08 2012-04-09 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크
JP5556452B2 (ja) * 2010-07-06 2014-07-23 信越化学工業株式会社 パターン形成方法
JP5708651B2 (ja) 2010-08-24 2015-04-30 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
KR102056509B1 (ko) * 2012-07-13 2019-12-16 호야 가부시키가이샤 마스크 블랭크 및 위상 시프트 마스크의 제조 방법
JP6287099B2 (ja) * 2013-05-31 2018-03-07 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
KR101875790B1 (ko) 2013-09-18 2018-07-06 호야 가부시키가이샤 반사형 마스크 블랭크 및 그 제조방법, 반사형 마스크 그리고 반도체 장치의 제조방법
JP6301127B2 (ja) 2013-12-25 2018-03-28 Hoya株式会社 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
JP6381921B2 (ja) * 2014-01-30 2018-08-29 Hoya株式会社 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
JP6440996B2 (ja) 2014-08-22 2018-12-19 Hoya株式会社 反射型マスクブランク及びその製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法
JP6441012B2 (ja) 2014-09-30 2018-12-19 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP6499440B2 (ja) 2014-12-24 2019-04-10 Hoya株式会社 反射型マスクブランク及び反射型マスク
JP6739960B2 (ja) * 2016-03-28 2020-08-12 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法

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JP7263424B2 (ja) 2023-04-24
TW201842396A (zh) 2018-12-01
SG11201907623RA (en) 2019-09-27
US20190384158A1 (en) 2019-12-19
KR102639087B1 (ko) 2024-02-22
JP2018146945A (ja) 2018-09-20
JP2021101258A (ja) 2021-07-08
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