JP6850338B2 - 温度センサー構成におけるフリッカーノイズ低減 - Google Patents
温度センサー構成におけるフリッカーノイズ低減 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims description 45
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 238000009529 body temperature measurement Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
- G01K7/015—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions using microstructures, e.g. made of silicon
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
- G05F3/222—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
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- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
12 バンドギャップ電圧ジェネレーター
14、14A、14B 半導体接合
18 分圧器網部分
20 アナログ/デジタル変換器
22 基準電圧ジェネレーター
30 基準端子
32、34A、34B スイッチ
40 チョッパー増幅器
42 ソースフォロワ出力ステージ
Rb3、R3、R4、R5 ポリ抵抗
Vbg 出力電圧
Vref 基準電圧
Claims (14)
- 出力電圧(Vbg)を与えるように構成しているバンドギャップ電圧ジェネレーター(12)と、及び温度感知用の少なくとも1つの半導体接合(14、14A、14B)とを備える温度センサー構成(10)であって、
前記半導体接合(14、14A、14B)は、前記半導体接合(14、14A、14B)を流れるバイアス電流によってバイアスされ、
当該温度センサー構成(10)は、さらに、前記バンドギャップ電圧ジェネレーター(12)の出力(23)と前記半導体接合(14、14A、14B)との間に接続された少なくとも1つのポリ抵抗(Rb3、R3、R5、R4)を備え、
これによって、前記バンドギャップ電圧ジェネレーター(12)から前記半導体接合(14、14A、14B)へと前記バイアス電流が供給され、
当該温度センサー構成(10)は、さらに、前記ポリ抵抗(R b3 、R 3 、R 5 、R 4 )と前記半導体接合(14、14A、14B)との間のノード(19、19A、19B)に接続され温度測定のデジタル化された出力(D out )を与える差動アナログ/デジタル変換器(20)と、
前記差動アナログ/デジタル変換器(20)の基準端子(30)に接続され前記差動アナログ/デジタル変換器(20)に基準電圧(V ref )を与えるように構成している基準電圧ジェネレーター(22)と、を備え、
前記基準電圧ジェネレーター(22)は、バンドギャップ電圧ジェネレータである
ことを特徴とする温度センサー構成(10)。 - 前記半導体接合(14、14A)の少なくとも1つは、バイポーラー接合トランジスターデバイスである
ことを特徴とする請求項1に記載の温度センサー構成(10)。 - 前記半導体接合(14、14B)の少なくとも1つは、ダイオードを形成するバイポーラー接合である
ことを特徴とする請求項1又は2に記載の温度センサー構成(10)。 - 前記ポリ抵抗(Rb3、R3、R5、R4)の少なくとも1つは、埋め込まれた多結晶ケイ素抵抗である
ことを特徴とする請求項1〜3のいずれか一項に記載の温度センサー構成(10)。 - 前記多結晶ケイ素抵抗(Rb3、R3、R5、R4)は、20kΩ〜25kΩの抵抗値を有する
ことを特徴とする請求項4に記載の温度センサー構成(10)。 - 前記ポリ抵抗(Rb3、R3、R5、R4)の少なくとも1つは、p+型の埋め込まれたポリ抵抗である
ことを特徴とする請求項1〜3のいずれか一項に記載の温度センサー構成(10)。 - 前記バンドギャップ電圧ジェネレーター(12)がチョッパー増幅器(40)を備える
ことを特徴とする請求項1〜6のいずれか一項に記載の温度センサー構成(10)。 - 前記ポリ抵抗又は各ポリ抵抗(Rb3、R3、R5、R4)は、前記チョッパー増幅器(40)の出力に接続される
ことを特徴とする請求項7に記載の温度センサー構成(10)。 - 前記バンドギャップ電圧ジェネレーター(12)は、さらに、前記チョッパー増幅器(40)の出力に接続されるソースフォロワ出力ステージ(42)を備え、
前記ポリ抵抗又は各ポリ抵抗(Rb3、R3、R5、R4)は、前記ソースフォロワ出力ステージ(42)の出力(23)に接続される
ことを特徴とする請求項7に記載の温度センサー構成(10)。 - 前記差動アナログ/デジタル変換器(20)の第1の入力25は、少なくとも1つの中間要素(18)を介して前記バンドギャップ電圧ジェネレーター(12)の出力(23)に接続され、
前記差動アナログ/デジタル変換器(20)の第2の入力28は、前記ノード(19、19A、19B)に接続される
ことを特徴とする請求項1−9のいずれか一項に記載の温度センサー構成(10)。 - 当該温度センサー構成(10)は、さらに、前記バンドギャップ電圧ジェネレーター(12)の出力(23)と前記差動アナログ/デジタル変換器(20)の前記第1の入力(25)との間に接続される分圧器網部分(18)を備える
ことを特徴とする請求項10に記載の温度センサー構成(10)。 - 当該温度センサー構成(10)は、2つの半導体接合(14A、14B)と、2つの対応するポリ抵抗(R3、R4)と、及び前記ポリ抵抗(R3、R4)の1つを介しての各半導体接合(14A、14B)と前記バンドギャップ電圧ジェネレーター(12)との間の接続と非接続を選択的に切り替えるスイッチング手段(34A、34B)とを備え、
前記半導体接合の第1の半導体接合(14A)は、バイポーラー接合トランジスターデバイスであり、
前記半導体接合の第2の半導体接合(14B)は、ダイオードである
ことを特徴とする請求項1〜11のいずれか一項に記載の温度センサー構成(10)。 - 当該温度センサー構成(10)は、さらに、チップを備え、
前記バンドギャップ電圧ジェネレーター(12)、両方の前記ポリ抵抗(R3、R4)、前記スイッチング手段(34A、34B)、及び前記バイポーラー接合トランジスターデバイス(14A)は、前記チップに埋め込まれ、
前記ダイオード(14B)は、別の異なるチップに埋め込まれる
ことを特徴とする請求項12に記載の温度センサー構成(10)。 - 当該温度センサー構成(10)は、対応するスイッチ(32、34A、34B)を介して前記半導体接合(14)に選択的に接続され前記バンドギャップ電圧ジェネレーター(12)の出力(23)に接続される2つのポリ抵抗(R3、R5)を備える
ことを特徴とする請求項1〜11のいずれか一項に記載の温度センサー構成(10)。
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EP19155312.2A EP3690412B1 (en) | 2019-02-04 | 2019-02-04 | Flicker noise reduction in a temperature sensor arrangement |
EP19155312.2 | 2019-02-04 |
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US11221638B2 (en) * | 2019-02-28 | 2022-01-11 | Qorvo Us, Inc. | Offset corrected bandgap reference and temperature sensor |
US11334101B2 (en) * | 2019-12-19 | 2022-05-17 | Qualcomm Incorporated | Circuits and methods providing bandgap calibration for multiple outputs |
CN114252160B (zh) | 2020-09-22 | 2024-03-22 | 无锡华润上华科技有限公司 | 模数转换器及热电堆阵列 |
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GB2123994B (en) * | 1982-07-16 | 1985-11-27 | Tokyo Shibaura Electric Co | Temperature controller |
SG55452A1 (en) | 1997-02-12 | 1998-12-21 | Int Rectifier Corp | Method and circuit to sense the tj of mos-gated power semi conductor devices |
KR101224919B1 (ko) * | 2006-02-07 | 2013-01-22 | 삼성전자주식회사 | 온도 변화에 따라 고전압 발생 회로의 출력 전압 레벨을조절하는 반도체 메모리 장치 |
US7726877B1 (en) * | 2007-01-23 | 2010-06-01 | Marvell Israel (M.I.S.L.) Ltd. | Method and apparatus of measuring temperature |
JP5189882B2 (ja) | 2008-04-11 | 2013-04-24 | ルネサスエレクトロニクス株式会社 | 温度センサ回路 |
TW201044791A (en) * | 2009-04-24 | 2010-12-16 | Integrated Device Tech | Clock, frequency reference, and other reference signal generator with frequency stability over temperature variation |
JP2011007545A (ja) | 2009-06-24 | 2011-01-13 | Seiko Npc Corp | 温度センサ |
JP6104512B2 (ja) * | 2011-04-01 | 2017-03-29 | ローム株式会社 | 温度検出装置 |
JP2014098614A (ja) | 2012-11-14 | 2014-05-29 | Renesas Electronics Corp | 温度センサおよび半導体装置 |
US10024729B2 (en) * | 2016-03-04 | 2018-07-17 | Sandisk Technologies Llc | High accuracy temperature sensor |
KR20170114314A (ko) * | 2016-04-04 | 2017-10-16 | 삼성전기주식회사 | 초핑 기술을 이용한 온도 검출 장치 |
TWI620407B (zh) * | 2016-12-23 | 2018-04-01 | Actron Technology Corporation | 車用整流器封裝模組及模組中溫度感測器的連接狀態偵測方法 |
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US11579023B2 (en) | 2023-02-14 |
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