JP6836980B2 - 基板洗浄方法 - Google Patents
基板洗浄方法 Download PDFInfo
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- JP6836980B2 JP6836980B2 JP2017197641A JP2017197641A JP6836980B2 JP 6836980 B2 JP6836980 B2 JP 6836980B2 JP 2017197641 A JP2017197641 A JP 2017197641A JP 2017197641 A JP2017197641 A JP 2017197641A JP 6836980 B2 JP6836980 B2 JP 6836980B2
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- 238000004140 cleaning Methods 0.000 title claims description 492
- 239000000758 substrate Substances 0.000 title claims description 462
- 238000000034 method Methods 0.000 title claims description 36
- 239000007788 liquid Substances 0.000 claims description 319
- 238000005406 washing Methods 0.000 claims description 18
- 238000007747 plating Methods 0.000 description 74
- 239000000243 solution Substances 0.000 description 34
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 230000002093 peripheral effect Effects 0.000 description 12
- 239000012487 rinsing solution Substances 0.000 description 10
- 230000032258 transport Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 239000004020 conductor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000005587 bubbling Effects 0.000 description 3
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- 125000006850 spacer group Chemical group 0.000 description 3
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- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- -1 chlorine ions Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- NZJMPGDMLIPDBR-UHFFFAOYSA-M tetramethylazanium;hydroxide;hydrate Chemical compound O.[OH-].C[N+](C)(C)C NZJMPGDMLIPDBR-UHFFFAOYSA-M 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/048—Overflow-type cleaning, e.g. tanks in which the liquid flows over the tank in which the articles are placed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/108—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by lowering and raising the level of the cleaning liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
- B08B9/093—Cleaning containers, e.g. tanks by the force of jets or sprays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
Description
本発明の好ましい態様は、前記洗浄液は、前記洗浄槽のオーバーフロー口よりも上方の前記洗浄槽の内面上に供給され、前記洗浄槽の内面上に前記洗浄液の流れを形成することを特徴とする。
本発明の好ましい態様は、前記洗浄槽の壁の上部に設けられた外溝に前記洗浄液を供給し、前記外溝から前記洗浄液を溢流させることにより前記洗浄槽の内面上に前記洗浄液の流れを形成することを特徴とする。
本発明の好ましい態様は、前記洗浄槽の内面上に供給される前記洗浄液は、第1の洗浄液および第2の洗浄液であり、前記洗浄槽の内面上に供給される前記洗浄液を前記第1の洗浄液から前記第2の洗浄液に切り替えることを特徴とする。
本発明の好ましい態様は、前記洗浄槽内の前記リンス液の液面の位置が前記基板ホルダの下端よりも高いときは、前記第1の洗浄液の流れを前記洗浄槽の内面上に形成し、前記洗浄槽内の前記リンス液の液面の位置が前記基板ホルダの下端よりも低いときは、前記第2の洗浄液の流れを前記洗浄槽の内面上に形成することを特徴とする。
本発明の好ましい態様は、前記基板および前記基板ホルダ上に前記洗浄液の流れを形成しながら、前記基板ホルダを前記リンス液から引き上げることを特徴とする。
12 カセットテーブル
14 アライナ
16 スピンリンスドライヤ
18 基板ホルダ
20 基板着脱部
22 基板搬送装置
24 ストッカ
26 プリウェット槽
28 前処理槽
30a 水洗槽
30b 基板洗浄装置
32 ブロー槽
34 めっき槽
36 オーバーフロー槽
38 めっきセル
40 基板ホルダ搬送装置
42 第1トランスポータ
44 第2トランスポータ
46 パドル駆動装置
50 レール
52 載置プレート
54 第1保持部材
54a 通孔
56 ヒンジ
58 第2保持部材
58a 開口部
60 基部
62 シールホルダ
64 押えリング
64a 凸部
64b 突起部
65 スペーサ
66 基板側シール突起(第1シール突起)
68 ホルダ側シール突起(第2シール突起)
69a 締結具
69b 締結具
70a 第1固定リング
70b 第2固定リング
72 押え板
74 クランパ
80 支持面
82 突条部
84 凹部
86 導電体
88 電気接点
89 締結具
90 ハンド
91 外部接点
100 洗浄槽
100a ドレイン
100b ドレインバルブ
101 バルブコントローラ
102 リンス液
103 洗浄液
104 洗浄液
105a 洗浄液
105b 洗浄液
106 リンス液ライン
106a バルブ
107 基板洗浄液供給ライン
107a バルブ
109 槽洗浄液供給ライン
109a バルブ
110 第1洗浄液供給ライン
110a バルブ
111 第2洗浄液供給ライン
111a バルブ
113 オーバーフロー口
115 外溝
117 基板洗浄ノズル
119 槽洗浄ノズル
123 ノズルヘッド
124 ノズル
Claims (7)
- 基板を保持した基板ホルダを洗浄槽内のリンス液中に浸漬させ、
前記基板、前記基板ホルダ、および前記洗浄槽の内面上に洗浄液の流れを形成しながら、前記洗浄槽から前記リンス液を排出し、
前記基板、前記基板ホルダ、および前記洗浄槽の内面上に前記洗浄液の流れを形成しながら、前記洗浄槽内に前記リンス液を供給して、前記基板ホルダを前記リンス液に浸漬させ、
前記基板ホルダを前記リンス液から引き上げることを特徴とする基板洗浄方法。 - 前記洗浄槽内に前記リンス液を供給し、前記リンス液を前記洗浄槽から溢流させながら、前記基板ホルダを前記洗浄槽内の前記リンス液中に浸漬させることを特徴とする請求項1に記載の基板洗浄方法。
- 前記洗浄液は、前記洗浄槽のオーバーフロー口よりも上方の前記洗浄槽の内面上に供給され、前記洗浄槽の内面上に前記洗浄液の流れを形成することを特徴とする請求項2に記載の基板洗浄方法。
- 前記洗浄槽の壁の上部に設けられた外溝に前記洗浄液を供給し、前記外溝から前記洗浄液を溢流させることにより前記洗浄槽の内面上に前記洗浄液の流れを形成することを特徴とする請求項1または2に記載の基板洗浄方法。
- 前記洗浄槽の内面上に供給される前記洗浄液は、第1の洗浄液および第2の洗浄液であり、
前記洗浄槽の内面上に供給される前記洗浄液を前記第1の洗浄液から前記第2の洗浄液に切り替えることを特徴とする請求項1乃至4のいずれか一項に記載の基板洗浄方法。 - 前記洗浄槽内の前記リンス液の液面の位置が前記基板ホルダの下端よりも高いときは、前記第1の洗浄液の流れを前記洗浄槽の内面上に形成し、
前記洗浄槽内の前記リンス液の液面の位置が前記基板ホルダの下端よりも低いときは、前記第2の洗浄液の流れを前記洗浄槽の内面上に形成することを特徴とする請求項5に記載の基板洗浄方法。 - 前記基板および前記基板ホルダ上に前記洗浄液の流れを形成しながら、前記基板ホルダを前記リンス液から引き上げることを特徴とする請求項1乃至6のいずれか一項に記載の基板洗浄方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2017197641A JP6836980B2 (ja) | 2017-10-11 | 2017-10-11 | 基板洗浄方法 |
KR1020180105323A KR102565317B1 (ko) | 2017-10-11 | 2018-09-04 | 기판 세정 방법 |
TW107134111A TWI746890B (zh) | 2017-10-11 | 2018-09-27 | 基板洗淨方法 |
US16/152,428 US20190105689A1 (en) | 2017-10-11 | 2018-10-05 | Substrate cleaning method |
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JP2017197641A JP6836980B2 (ja) | 2017-10-11 | 2017-10-11 | 基板洗浄方法 |
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JP2019071382A JP2019071382A (ja) | 2019-05-09 |
JP2019071382A5 JP2019071382A5 (ja) | 2020-05-14 |
JP6836980B2 true JP6836980B2 (ja) | 2021-03-03 |
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US (1) | US20190105689A1 (ja) |
JP (1) | JP6836980B2 (ja) |
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TWI738855B (zh) * | 2016-09-08 | 2021-09-11 | 日商荏原製作所股份有限公司 | 基板固持器、鍍覆裝置、基板固持器之製造方法、以及基板保持方法 |
US11658059B2 (en) * | 2018-02-28 | 2023-05-23 | Ii-Vi Delaware, Inc. | Thin material handling carrier |
KR102335472B1 (ko) * | 2019-09-04 | 2021-12-07 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
WO2022180780A1 (ja) * | 2021-02-26 | 2022-09-01 | 株式会社荏原製作所 | 基板ホルダの保管方法、めっき装置 |
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US4361163A (en) * | 1981-01-02 | 1982-11-30 | Seiichiro Aigo | Apparatus for washing semiconductor materials |
DE19655219C2 (de) * | 1996-04-24 | 2003-11-06 | Steag Micro Tech Gmbh | Vorrichtung zum Behandeln von Substraten in einem Fluid-Behälter |
US5922138A (en) * | 1996-08-12 | 1999-07-13 | Tokyo Electron Limited | Liquid treatment method and apparatus |
US6799583B2 (en) * | 1999-05-13 | 2004-10-05 | Suraj Puri | Methods for cleaning microelectronic substrates using ultradilute cleaning liquids |
JP6092653B2 (ja) * | 2012-02-27 | 2017-03-08 | 株式会社荏原製作所 | 基板洗浄装置及び洗浄方法 |
JP6748524B2 (ja) * | 2015-09-30 | 2020-09-02 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
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2018
- 2018-09-04 KR KR1020180105323A patent/KR102565317B1/ko active IP Right Grant
- 2018-09-27 TW TW107134111A patent/TWI746890B/zh active
- 2018-10-05 US US16/152,428 patent/US20190105689A1/en not_active Abandoned
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KR102565317B1 (ko) | 2023-08-09 |
TW201914702A (zh) | 2019-04-16 |
KR20190040893A (ko) | 2019-04-19 |
US20190105689A1 (en) | 2019-04-11 |
JP2019071382A (ja) | 2019-05-09 |
TWI746890B (zh) | 2021-11-21 |
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