JP6835042B2 - 測距装置 - Google Patents

測距装置 Download PDF

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Publication number
JP6835042B2
JP6835042B2 JP2018118821A JP2018118821A JP6835042B2 JP 6835042 B2 JP6835042 B2 JP 6835042B2 JP 2018118821 A JP2018118821 A JP 2018118821A JP 2018118821 A JP2018118821 A JP 2018118821A JP 6835042 B2 JP6835042 B2 JP 6835042B2
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JP
Japan
Prior art keywords
spad
potential
detection
monitor
unit
Prior art date
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Active
Application number
JP2018118821A
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English (en)
Japanese (ja)
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JP2019219345A5 (enExample
JP2019219345A (ja
Inventor
武廣 秦
武廣 秦
善英 立野
善英 立野
勇 高井
勇 高井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2018118821A priority Critical patent/JP6835042B2/ja
Priority to PCT/JP2019/024745 priority patent/WO2019245034A1/ja
Publication of JP2019219345A publication Critical patent/JP2019219345A/ja
Publication of JP2019219345A5 publication Critical patent/JP2019219345A5/ja
Application granted granted Critical
Publication of JP6835042B2 publication Critical patent/JP6835042B2/ja
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C3/00—Measuring distances in line of sight; Optical rangefinders
    • G01C3/02—Details
    • G01C3/06—Use of electric means to obtain final indication
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/497—Means for monitoring or calibrating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Electromagnetism (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
  • Measurement Of Optical Distance (AREA)
  • Light Receiving Elements (AREA)
JP2018118821A 2018-06-22 2018-06-22 測距装置 Active JP6835042B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018118821A JP6835042B2 (ja) 2018-06-22 2018-06-22 測距装置
PCT/JP2019/024745 WO2019245034A1 (ja) 2018-06-22 2019-06-21 測距装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018118821A JP6835042B2 (ja) 2018-06-22 2018-06-22 測距装置

Publications (3)

Publication Number Publication Date
JP2019219345A JP2019219345A (ja) 2019-12-26
JP2019219345A5 JP2019219345A5 (enExample) 2020-05-21
JP6835042B2 true JP6835042B2 (ja) 2021-02-24

Family

ID=68984067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018118821A Active JP6835042B2 (ja) 2018-06-22 2018-06-22 測距装置

Country Status (2)

Country Link
JP (1) JP6835042B2 (enExample)
WO (1) WO2019245034A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025263207A1 (ja) * 2024-06-18 2025-12-26 ソニーセミコンダクタソリューションズ株式会社 電圧検出回路および光検出装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010100574A2 (en) * 2009-03-06 2010-09-10 Koninklijke Philips Electronics N.V. Advanced temperature compensation and control circuit for single photon counters
JP5872197B2 (ja) * 2011-07-04 2016-03-01 浜松ホトニクス株式会社 フォトダイオードアレイモジュール
GB2510890A (en) * 2013-02-18 2014-08-20 St Microelectronics Res & Dev Method and apparatus
JP6257916B2 (ja) * 2013-04-26 2018-01-10 東芝メディカルシステムズ株式会社 光検出装置、放射線検出装置、放射線分析装置及び光検出方法
JP6314418B2 (ja) * 2013-10-18 2018-04-25 株式会社デンソー レーダ装置
JP2016061729A (ja) * 2014-09-19 2016-04-25 株式会社東芝 光子検出素子、光子検出装置、及び放射線分析装置
TWI544303B (zh) * 2015-01-30 2016-08-01 財團法人工業技術研究院 單光子雪崩光電二極體的超額偏壓控制系統與方法
US9985071B2 (en) * 2016-04-15 2018-05-29 Qualcomm Incorporated Active area selection for LIDAR receivers

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Publication number Publication date
WO2019245034A1 (ja) 2019-12-26
JP2019219345A (ja) 2019-12-26

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