JP6833597B2 - 固体撮像装置 - Google Patents

固体撮像装置 Download PDF

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Publication number
JP6833597B2
JP6833597B2 JP2017078237A JP2017078237A JP6833597B2 JP 6833597 B2 JP6833597 B2 JP 6833597B2 JP 2017078237 A JP2017078237 A JP 2017078237A JP 2017078237 A JP2017078237 A JP 2017078237A JP 6833597 B2 JP6833597 B2 JP 6833597B2
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JP
Japan
Prior art keywords
photoelectric conversion
wire grid
grid polarizing
light
solid
Prior art date
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JP2017078237A
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English (en)
Japanese (ja)
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JP2018182022A (ja
JP2018182022A5 (OSRAM
Inventor
貴志 町田
貴志 町田
健太郎 秋山
健太郎 秋山
山崎　知洋
知洋 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Priority to JP2017078237A priority Critical patent/JP6833597B2/ja
Priority to DE112018001963.2T priority patent/DE112018001963T5/de
Priority to US16/499,911 priority patent/US11004884B2/en
Priority to CN201880022868.8A priority patent/CN110546763B/zh
Priority to PCT/JP2018/009261 priority patent/WO2018190049A1/en
Publication of JP2018182022A publication Critical patent/JP2018182022A/ja
Publication of JP2018182022A5 publication Critical patent/JP2018182022A5/ja
Application granted granted Critical
Publication of JP6833597B2 publication Critical patent/JP6833597B2/ja
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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Polarising Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Optical Filters (AREA)
JP2017078237A 2017-04-11 2017-04-11 固体撮像装置 Active JP6833597B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2017078237A JP6833597B2 (ja) 2017-04-11 2017-04-11 固体撮像装置
DE112018001963.2T DE112018001963T5 (de) 2017-04-11 2018-03-09 Festkörperbildgebungsvorrichtung
US16/499,911 US11004884B2 (en) 2017-04-11 2018-03-09 Solid-state imaging apparatus
CN201880022868.8A CN110546763B (zh) 2017-04-11 2018-03-09 成像器件和电子装置
PCT/JP2018/009261 WO2018190049A1 (en) 2017-04-11 2018-03-09 Solid-state imaging apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017078237A JP6833597B2 (ja) 2017-04-11 2017-04-11 固体撮像装置

Publications (3)

Publication Number Publication Date
JP2018182022A JP2018182022A (ja) 2018-11-15
JP2018182022A5 JP2018182022A5 (OSRAM) 2020-05-07
JP6833597B2 true JP6833597B2 (ja) 2021-02-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017078237A Active JP6833597B2 (ja) 2017-04-11 2017-04-11 固体撮像装置

Country Status (5)

Country Link
US (1) US11004884B2 (OSRAM)
JP (1) JP6833597B2 (OSRAM)
CN (1) CN110546763B (OSRAM)
DE (1) DE112018001963T5 (OSRAM)
WO (1) WO2018190049A1 (OSRAM)

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EP3799123A4 (en) * 2019-07-30 2021-04-28 Shenzhen Goodix Technology Co., Ltd. IMAGE SENSOR AND METHOD OF MANUFACTURING THEREOF, CHIP AND HANDHELD DEVICE
JP2021035015A (ja) * 2019-08-29 2021-03-01 株式会社東芝 固体撮像装置
CN112466895A (zh) * 2019-09-06 2021-03-09 世界先进积体电路股份有限公司 光学感测器及其形成方法
KR102704191B1 (ko) * 2019-10-23 2024-09-05 삼성전자주식회사 이미지 센서
WO2021090537A1 (ja) * 2019-11-08 2021-05-14 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および、撮像装置
JP7511107B2 (ja) * 2019-11-15 2024-07-05 Ａｇｃ株式会社 光学フィルタ
US11515437B2 (en) * 2019-12-04 2022-11-29 Omnivision Technologies, Inc. Light sensing system and light sensor with polarizer
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JP7595443B2 (ja) * 2020-11-26 2024-12-06 株式会社ジャパンディスプレイ 検出装置
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Also Published As

Publication number Publication date
CN110546763A (zh) 2019-12-06
WO2018190049A1 (en) 2018-10-18
DE112018001963T5 (de) 2019-12-19
CN110546763B (zh) 2024-08-13
US20200119073A1 (en) 2020-04-16
JP2018182022A (ja) 2018-11-15
US11004884B2 (en) 2021-05-11

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