JP6830104B2 - 水素輸送に対するバリアを有するeuv要素 - Google Patents
水素輸送に対するバリアを有するeuv要素 Download PDFInfo
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- JP6830104B2 JP6830104B2 JP2018534783A JP2018534783A JP6830104B2 JP 6830104 B2 JP6830104 B2 JP 6830104B2 JP 2018534783 A JP2018534783 A JP 2018534783A JP 2018534783 A JP2018534783 A JP 2018534783A JP 6830104 B2 JP6830104 B2 JP 6830104B2
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- inert gas
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- euv
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- 229910052739 hydrogen Inorganic materials 0.000 title claims description 54
- 239000001257 hydrogen Substances 0.000 title claims description 52
- 230000004888 barrier function Effects 0.000 title claims description 16
- 125000004435 hydrogen atom Chemical class [H]* 0.000 title description 3
- 230000005855 radiation Effects 0.000 claims description 39
- 229910052734 helium Inorganic materials 0.000 claims description 37
- 239000013077 target material Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 33
- 239000001307 helium Substances 0.000 claims description 32
- 150000002500 ions Chemical class 0.000 claims description 30
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 28
- 239000011261 inert gas Substances 0.000 claims description 24
- 238000000576 coating method Methods 0.000 claims description 21
- 238000009792 diffusion process Methods 0.000 claims description 21
- 150000002431 hydrogen Chemical class 0.000 claims description 19
- 239000011248 coating agent Substances 0.000 claims description 17
- -1 hydrogen ions Chemical class 0.000 claims description 16
- 125000004429 atom Chemical group 0.000 claims description 10
- 230000007935 neutral effect Effects 0.000 claims description 10
- 239000013626 chemical specie Substances 0.000 claims description 9
- 238000007689 inspection Methods 0.000 claims description 7
- 238000000206 photolithography Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 67
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 35
- 239000007789 gas Substances 0.000 description 30
- 230000003287 optical effect Effects 0.000 description 26
- 238000002347 injection Methods 0.000 description 25
- 239000007924 injection Substances 0.000 description 25
- 239000000463 material Substances 0.000 description 20
- 241000894007 species Species 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 13
- 230000008569 process Effects 0.000 description 10
- 238000005215 recombination Methods 0.000 description 8
- 230000006798 recombination Effects 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000013590 bulk material Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000003795 desorption Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008595 infiltration Effects 0.000 description 3
- 238000001764 infiltration Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical group [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- KXCAEQNNTZANTK-UHFFFAOYSA-N stannane Chemical compound [SnH4] KXCAEQNNTZANTK-UHFFFAOYSA-N 0.000 description 2
- 229910000080 stannane Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 206010040844 Skin exfoliation Diseases 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000035618 desquamation Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000037427 ion transport Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
- G02B19/0095—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ultraviolet radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Atmospheric Sciences (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- High Energy & Nuclear Physics (AREA)
- General Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Optical Elements Other Than Lenses (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- X-Ray Techniques (AREA)
Description
[0002] 本願は、2016年1月12日出願の米国仮特許出願第62/277,807号、2016年1月14日出願の米国仮特許出願第62/278,923号、及び、2016年10月31日出願の米国実用特許出願第15/338,835号の優先権を主張する。
He2++He→He+He2+
上式で、左側のHe2+はエネルギーヘリウムイオンであり、左側のHeは冷ヘリウム原子であり、右側のHeはエネルギー中性ヘリウム原子であり、右側のHe2+は冷ヘリウムイオンである。その後、エネルギー中性ヘリウム原子は注入され得る。
Claims (10)
- EUV放射を発生させるためのシステムにおいて使用するための多層ミラーであって、前記多層ミラーは、EUV放射を発生させるための前記システムの動作中に水素イオンに曝露され、前記多層ミラーは、
基板、
前記基板上のバッキング層、及び、
前記バッキング層上の多層コーティング、
を含み、
前記バッキング層は、不活性ガスの化学種が注入された領域を備える水素拡散バリアを含む、
多層ミラー。 - 前記不活性ガスの前記化学種は前記不活性ガスのイオンを含む、請求項1に記載の多層ミラー。
- 前記不活性ガスの前記化学種は前記不活性ガスのエネルギー中性原子を含む、請求項1に記載の多層ミラー。
- 前記不活性ガスはヘリウムを含む、請求項1〜3のいずれかに記載の多層ミラー。
- 半導体フォトリソグラフィ又は検査のための装置であって、
レーザ放射源と、
極端紫外線放射を生成するためにターゲット材料が前記レーザ放射源によって照射される照射領域に前記ターゲット材料を送達するための、ターゲットデリバリシステムと、
前記極端紫外線放射を収集するように配置された反射光学要素であって、前記反射光学要素は多層スタック及びバッキング層を含む多層ミラーを備え、前記バッキング層は、不活性ガスの化学種が注入された領域を備える水素拡散バリアを含む、反射光学要素と、
を備える、装置。 - 前記不活性ガスの前記化学種は前記不活性ガスのイオンを含む、請求項5に記載の装置。
- 前記不活性ガスの前記化学種は前記不活性ガスのエネルギー中性原子を含む、請求項5に記載の装置。
- EUV放射を発生させるためのシステムにおいて使用するための多層ミラーを取り扱う方法であって、前記多層ミラーは、EUV放射を発生させるための前記システムの動作中に水素イオンに曝露され、
バッキング層を曝露するために前記多層ミラーの多層コーティングを除去するステップと、
不活性ガスの化学種を前記バッキング層に注入するステップと、
多層コーティングを前記バッキング層上に配置するステップと、
を含む、方法。 - 前記不活性ガスの前記化学種は前記不活性ガスのイオンを含む、請求項8に記載の方法。
- 前記不活性ガスの前記化学種は前記不活性ガスのエネルギー中性原子を含む、請求項8に記載の方法。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662277807P | 2016-01-12 | 2016-01-12 | |
US62/277,807 | 2016-01-12 | ||
US201662278923P | 2016-01-14 | 2016-01-14 | |
US62/278,923 | 2016-01-14 | ||
US15/338,835 | 2016-10-31 | ||
US15/338,835 US10128016B2 (en) | 2016-01-12 | 2016-10-31 | EUV element having barrier to hydrogen transport |
PCT/US2016/062618 WO2017123323A1 (en) | 2016-01-12 | 2016-11-17 | Euv element having barrier to hydrogen transport |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019508728A JP2019508728A (ja) | 2019-03-28 |
JP6830104B2 true JP6830104B2 (ja) | 2021-02-17 |
Family
ID=59275028
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018534783A Active JP6830104B2 (ja) | 2016-01-12 | 2016-11-17 | 水素輸送に対するバリアを有するeuv要素 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10128016B2 (ja) |
JP (1) | JP6830104B2 (ja) |
KR (1) | KR20180101515A (ja) |
CN (1) | CN108463747A (ja) |
TW (1) | TWI704375B (ja) |
WO (1) | WO2017123323A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016213831A1 (de) * | 2016-07-27 | 2018-02-01 | Carl Zeiss Smt Gmbh | Reflektives optisches Element für die EUV-Lithographie |
KR102574161B1 (ko) | 2018-02-06 | 2023-09-06 | 삼성전자주식회사 | 펠리클 및 이를 포함하는 레티클 |
WO2020094449A1 (en) * | 2018-11-08 | 2020-05-14 | Sabic Global Technologies B.V. | A process for the preparation of ethylene homo- or copolymers in a tubular reactor |
US11262664B2 (en) * | 2019-11-19 | 2022-03-01 | Kla Corporation | System and method for protecting optics from vacuum ultraviolet light |
CN114747298A (zh) * | 2019-11-27 | 2022-07-12 | Asml荷兰有限公司 | 用于光学系统的抑制剂物质 |
US20210335599A1 (en) * | 2020-04-28 | 2021-10-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Euv photomask and related methods |
US11561482B2 (en) | 2021-06-18 | 2023-01-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for reducing hydrogen permeation from lithographic tool |
JPWO2023286669A1 (ja) | 2021-07-12 | 2023-01-19 | ||
KR20230112840A (ko) | 2022-01-21 | 2023-07-28 | 한국표준과학연구원 | 펠리클 성능 평가 시스템 및 방법 |
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-
2016
- 2016-10-31 US US15/338,835 patent/US10128016B2/en active Active
- 2016-11-17 CN CN201680078648.8A patent/CN108463747A/zh active Pending
- 2016-11-17 WO PCT/US2016/062618 patent/WO2017123323A1/en active Application Filing
- 2016-11-17 KR KR1020187023131A patent/KR20180101515A/ko not_active Application Discontinuation
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KR20180101515A (ko) | 2018-09-12 |
US10128016B2 (en) | 2018-11-13 |
US20170200523A1 (en) | 2017-07-13 |
TWI704375B (zh) | 2020-09-11 |
JP2019508728A (ja) | 2019-03-28 |
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TW201734559A (zh) | 2017-10-01 |
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