JP6829665B2 - リードフレーム、半導体装置、及びリードフレームの製造方法 - Google Patents
リードフレーム、半導体装置、及びリードフレームの製造方法 Download PDFInfo
- Publication number
- JP6829665B2 JP6829665B2 JP2017134746A JP2017134746A JP6829665B2 JP 6829665 B2 JP6829665 B2 JP 6829665B2 JP 2017134746 A JP2017134746 A JP 2017134746A JP 2017134746 A JP2017134746 A JP 2017134746A JP 6829665 B2 JP6829665 B2 JP 6829665B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- lead frame
- silver
- metal plate
- silver film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 229910052709 silver Inorganic materials 0.000 claims description 94
- 239000004332 silver Substances 0.000 claims description 94
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 93
- 229910052751 metal Inorganic materials 0.000 claims description 55
- 239000002184 metal Substances 0.000 claims description 55
- 229920005989 resin Polymers 0.000 claims description 34
- 239000011347 resin Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 26
- 229920006254 polymer film Polymers 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 21
- 238000000576 coating method Methods 0.000 claims description 21
- 238000007747 plating Methods 0.000 claims description 21
- 239000010936 titanium Substances 0.000 claims description 15
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000013522 chelant Substances 0.000 claims description 13
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 11
- 229920000642 polymer Polymers 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 8
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 8
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 239000012298 atmosphere Substances 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims 1
- 230000000379 polymerizing effect Effects 0.000 claims 1
- 239000000243 solution Substances 0.000 description 55
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 49
- 229910052802 copper Inorganic materials 0.000 description 49
- 239000010949 copper Substances 0.000 description 49
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- 125000002524 organometallic group Chemical group 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000007789 sealing Methods 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 6
- 238000007865 diluting Methods 0.000 description 5
- 238000011835 investigation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- 239000002562 thickening agent Substances 0.000 description 4
- 239000012463 white pigment Substances 0.000 description 4
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 3
- 239000004327 boric acid Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- ZPWVASYFFYYZEW-UHFFFAOYSA-L dipotassium hydrogen phosphate Chemical compound [K+].[K+].OP([O-])([O-])=O ZPWVASYFFYYZEW-UHFFFAOYSA-L 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000013527 degreasing agent Substances 0.000 description 2
- 238000005237 degreasing agent Methods 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000001336 glow discharge atomic emission spectroscopy Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- HKSGQTYSSZOJOA-UHFFFAOYSA-N potassium argentocyanide Chemical compound [K+].[Ag+].N#[C-].N#[C-] HKSGQTYSSZOJOA-UHFFFAOYSA-N 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017134746A JP6829665B2 (ja) | 2017-07-10 | 2017-07-10 | リードフレーム、半導体装置、及びリードフレームの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017134746A JP6829665B2 (ja) | 2017-07-10 | 2017-07-10 | リードフレーム、半導体装置、及びリードフレームの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019016740A JP2019016740A (ja) | 2019-01-31 |
| JP2019016740A5 JP2019016740A5 (enrdf_load_html_response) | 2020-04-09 |
| JP6829665B2 true JP6829665B2 (ja) | 2021-02-10 |
Family
ID=65356567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017134746A Active JP6829665B2 (ja) | 2017-07-10 | 2017-07-10 | リードフレーム、半導体装置、及びリードフレームの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6829665B2 (enrdf_load_html_response) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7293682B2 (ja) * | 2018-12-12 | 2023-06-20 | 株式会社三洋物産 | 遊技機 |
| JP2020093053A (ja) * | 2018-12-12 | 2020-06-18 | 株式会社三洋物産 | 遊技機 |
| JP2020093052A (ja) * | 2018-12-12 | 2020-06-18 | 株式会社三洋物産 | 遊技機 |
| JP2020093050A (ja) * | 2018-12-12 | 2020-06-18 | 株式会社三洋物産 | 遊技機 |
| JP2020093049A (ja) * | 2018-12-12 | 2020-06-18 | 株式会社三洋物産 | 遊技機 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0613516A (ja) * | 1992-05-26 | 1994-01-21 | Nippon Steel Corp | リードフレームの製造方法 |
| JP4269595B2 (ja) * | 2002-08-23 | 2009-05-27 | トヨタ自動車株式会社 | 酸化物半導体電極及びその製造方法 |
| US20080318061A1 (en) * | 2007-06-20 | 2008-12-25 | Akira Inaba | Insulation paste for a metal core substrate and electronic device |
| TW201250964A (en) * | 2011-01-27 | 2012-12-16 | Dainippon Printing Co Ltd | Resin-attached lead frame, method for manufacturing same, and lead frame |
| JP5456209B2 (ja) * | 2011-08-01 | 2014-03-26 | 株式会社Ｓｔｅｑ | 半導体装置及びその製造方法 |
-
2017
- 2017-07-10 JP JP2017134746A patent/JP6829665B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019016740A (ja) | 2019-01-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6829665B2 (ja) | リードフレーム、半導体装置、及びリードフレームの製造方法 | |
| US9966517B2 (en) | LED leadframe or LED substrate, semiconductor device, and method for manufacturing LED leadframe or LED substrate | |
| CN102683564B (zh) | 制造引线框架的方法和发光器件封装件 | |
| US20080083973A1 (en) | Lead frame for an optical semiconductor device, optical semiconductor device using the same, and manufacturing method for these | |
| JP5307824B2 (ja) | 光半導体装置用パッケージおよびこれを用いた光半導体装置、並びにこれらの製造方法 | |
| US9735096B1 (en) | Lead frame and method for manufacturing the same | |
| JP6481499B2 (ja) | 光半導体装置用リードフレーム又は基板、並びにそれを用いた光半導体装置 | |
| JP3940124B2 (ja) | 装置 | |
| JP2022168010A (ja) | 光半導体装置用金属材料、及びその製造方法、及びそれを用いた光半導体装置 | |
| JP7339566B2 (ja) | 光半導体装置用金属構造の製造方法、パッケージ、及びポリアリルアミン重合体を含む溶液 | |
| CN105814701B (zh) | 光半导体装置及其制造方法以及银用表面处理剂及发光装置 | |
| TW201800607A (zh) | 引線框結構，引線框，表面黏著型電子裝置及其製造方法 | |
| JP2011233395A (ja) | バックライトユニットおよび液晶表示装置 | |
| JP2015124427A (ja) | 発光装置用リードフレーム又は基板に用いられるめっき液、並びに、それを用いて製造されるリードフレーム又は基板、及びその製造方法、及びそれを備える発光装置 | |
| JP7116308B2 (ja) | 光半導体装置用金属材料、及びその製造方法、及びそれを用いた光半導体装置 | |
| JP2012138441A (ja) | Ｌｅｄ用基板とその製造方法および半導体装置 | |
| JP6269284B2 (ja) | 銀用表面処理剤及び発光装置 | |
| JP7148793B2 (ja) | 光半導体装置用金属材料、及びその製造方法、及びそれを用いた光半導体装置 | |
| JP2015233081A (ja) | 光半導体装置の製造方法及び光半導体装置 | |
| JP2013183148A (ja) | 半導体発光素子搭載用基板、半導体発光素子搭載用基板の製造方法及び半導体発光素子搭載用基板を用いた半導体発光装置 | |
| JP6635152B2 (ja) | リードフレーム、発光装置用パッケージ、発光装置及び発光装置の製造方法 | |
| JP2008004844A (ja) | 発光装置およびその製造方法 | |
| JP2015207634A (ja) | 発光装置 | |
| JP2016128250A (ja) | 複合体の製造方法 | |
| TW201919855A (zh) | 發光裝置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20180320 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200225 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200225 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210105 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20201225 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210122 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6829665 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |