JP6821263B2 - Method and device for measuring the curvature of the chip - Google Patents

Description

The present invention relates to a method for measuring the curvature of a chip when evaluating the bending strength of a chip and a device for measuring the curvature of the chip when evaluating the bending strength of the chip.

A plurality of scheduled division lines are set on the surface of the semiconductor wafer so as to be arranged in a grid pattern, and devices such as ICs and LSIs are formed in each region partitioned by the scheduled division lines. Then, when the semiconductor wafer is divided along the planned division line, individual chips having the device are formed.

When a large impact is applied to a semiconductor wafer or chip, damage such as cracks and cracks may occur and the function of the device may be lost. Therefore, in order to develop a chip having a predetermined level of bending strength, the bending strength of a semiconductor wafer or a prototype chip is measured. As a method for evaluating the bending strength, for example, there is a 3-point bending method defined by SEMI (Semiconductor Equipment and Materials International) standard G86-0303.

For example, when measuring the bending strength of a semiconductor wafer by a three-point bending method, two columnar supports are tilted and arranged in parallel with each other, and the semiconductor wafer to be measured is placed on the side surface of the support. Place it without fixing it. Then, a columnar indenter is placed between the two supports above the semiconductor wafer and parallel to the two supports. Then, the semiconductor wafer is pressed from above by the indenter to break it, and the load applied to the semiconductor wafer at that time is measured as the strength (see Patent Document 1).

Japanese Unexamined Patent Publication No. 2014-222714

In recent years, there has been a remarkable tendency for electronic devices and the like to become smaller and thinner. Along with this, there is a remarkable tendency for chips mounted on the electronic devices and the like to become smaller and thinner, and for example, ultrathin chips having a thickness of 30 μm or less are manufactured. When the measurement by the three-point bending method is attempted to evaluate the bending strength of the ultra-thin tip, even if the tip is pressed with an indenter during the measurement, the tip only bends and the tip cannot be broken, and the bending strength is increased. There is a problem that it cannot be measured.

The present invention has been made in view of such a problem, and an object of the present invention is to provide a method capable of measuring the curvature at the time of breaking of the chip when evaluating the bending strength of the chip and a device capable of measuring the curvature. Is to provide.

According to one aspect of the present invention, it is a method of measuring the curvature of a chip when the chip is broken in a chip bending test, and the upper surface supports a first region on one end side of the chip in a state before bending. A second support that is held on the support surface of the first holding means including the first support that serves as a surface and has a second region whose upper surface is a support surface on the other end side of the chip. The chip holding step of holding the chip on the support surface of the holding means of 2, and after performing the holding step, the measurement region between the first region and the second region of the chip is bent while bending. The first support of the first holding means and the second support of the second holding means are relatively moved so that the cross-sectional shape of the measurement region is arcuate, and the first support is moved. A first moving step in which the supporting surface of the holding means and the supporting surface of the second holding means face each other, and after performing the first moving step, the supporting surface of the first holding means The first support of the first holding means and the second support of the second holding means are relative to each other in a state of facing each other with the supporting surface of the second holding means. A second moving step for moving the chip, a chip breaking detection step for detecting that the chip has been broken during the first moving step or the second moving step, and a chip in the chip breaking detecting step. Provided is a method for measuring the curvature of a chip, which comprises a curvature detecting step for detecting the curvature of the measurement region when the destruction of the chip is detected.

Further, according to another aspect of the present invention, a device for measuring the curvature of a chip when the chip is broken in a chip bending test, the first region on one end side of the chip in a state before bending. The first holding means for holding on the first support surface on the upper surface of the first support and the second region on the other end side of the chip are held on the second support surface on the upper surface of the second support. The measurement region between the second holding means, the first holding means, the second holding means, the first region of the chip held by the second holding means, and the second region is bent. The first support of the first holding means and the second support of the second holding means are relatively moved so that the cross-sectional shape of the measurement region becomes an arc shape. The support surface of 1 and the second support surface are made to face each other, and then the first support of the first holding means and the second support of the second holding means are made to face each other. The chip during relative movement of the moving means that moves relatively in the approaching direction, the first support of the first holding means by the moving means, and the second support of the second holding means. It is characterized by comprising a chip destruction detecting means for detecting that the chip is destroyed and a curvature detecting means for detecting the curvature of the measurement region when the chip destruction is detected by the chip destruction detecting means. A device for measuring the curvature of a chip is provided.

In one aspect of the present invention, a first holding means for holding the first region on one end side of the chip and a second holding means for holding the second region on the other end side of the chip are used. .. First, the chip to be measured is held on the support surface of the upper surface of the first support of the first holding means and on the support surface of the upper surface of the second support of the second holding means. Then, the first support of the first holding means and the second support are moved relative to the second holding means to form the first region of the chip and the second region. The sandwiched measurement area is bent to cause destruction in the measurement area.

In order to bend the measurement area of the chip, first, a first support of the first holding means and a second support of the second holding means are used so that the cross-sectional shape of the measurement area is arcuate. , Are relatively moved so that the support surface of the first holding means and the support surface of the second holding means face each other. If the chip breaks during this process, the curvature of the measurement area when the break occurs is measured.

If the chip is not broken before the support surface of the first holding means and the support surface of the second holding means face each other, the first support of the first holding means and the second The curvature of the measurement region is increased by bringing the second support of the holding means and the second support of the holding means closer to each other to reduce the distance. Then, when it is detected that the chip has broken, the curvature of the measurement area when the break occurs is measured.

As described above, when the tip is bent by using the first holding means and the second holding means, the curvature of the tip can be increased as compared with the case where the above-mentioned three-point bending method is performed. Therefore, even when evaluating the bending strength of an ultrathin chip, the curvature can be increased so that the chip is broken. Then, the bending strength of the ultrathin chip can be evaluated by measuring the curvature of the chip when fracture occurs.

Therefore, according to the present invention, there is provided a method capable of measuring the curvature of a chip at the time of fracture when evaluating the bending strength of the chip, and an apparatus capable of measuring the curvature.

It is a side view which shows typically the apparatus which measures the curvature. It is a perspective view which shows typically the pressing unit of the apparatus which measures a curvature. It is a perspective view which shows typically the table of the apparatus which measures a curvature. It is a perspective view which shows typically the holding unit of the apparatus which measures a curvature. It is sectional drawing of the holding unit. FIG. 6A is a side view schematically showing the holding unit and the tip in the chip holding step, and FIG. 6B is a schematic view of the holding unit and the tip in the first moving step. It is a side view which shows. It is a side view which shows typically the holding unit in the 2nd moving step.

First, an apparatus for measuring the curvature of the chip according to the present embodiment will be described. FIG. 1 is a side view schematically showing the device. The device 2 includes a pressing unit 2a, a table 2b, and a holding unit 2c, and has a function of bending the chip 1 to gradually increase the curvature of the chip 1.

FIG. 2 schematically shows a pressing unit 2a of the device 2. The pressing unit 2a has a rectangular pedestal 6 having a substantially flat upper surface. Cylindrical columns 8 configured at substantially the same height are erected near the four corners of the upper surface of the pedestal 6. A flat top plate 4 is attached to the upper end of each support column 8. That is, the top plate 4 is supported by the support columns 8.

An elevator 10 is arranged on the upper surface of the pedestal 6. The elevator 10 has a fixing plate 10a fixed to the upper surface of the pedestal 6. An expansion / contraction mechanism 10b that expands and contracts in the vertical direction is arranged on the upper surface of the fixed plate 10a, and a flat plate-shaped stage 12 is provided at the upper end of the expansion / contraction mechanism 10b.

A height adjusting screw 14 is provided on the side of the telescopic mechanism 10b, and by rotating the height adjusting screw 14, the telescopic mechanism 10b can be expanded and contracted to change the height of the stage 12. For example, by raising the stage 12, an object arranged between the top plate 4 and the stage 12 can be pressed by sandwiching 12 between the top plate 4 and the stage.

A main body 16a of the digital gauge 16 for measuring the height of the stage 12 is arranged on the upper surface side of the top plate 4. A shaft 16b that moves in the vertical direction is inserted in the lower part of the main body 16a. The shaft 16b is passed through a through hole that penetrates the top plate 4 in the vertical direction. The lower end of the shaft 16b is in contact with the upper surface of the stage 12.

With this digital gauge 16, the height of the lower end of the shaft 16b corresponding to the height of the stage 12 can be measured. A display unit 18 is connected to the main body 16a of the digital gauge 16 via a signal line 16c. The height of the lower end of the shaft 16b measured by the digital gauge 16 (that is, the height of the stage 12) is displayed on the display unit 18.

A table 2b is installed on the upper surface of the stage 12. FIG. 3 is a perspective view schematically showing the table 2b. As shown in FIG. 3, the table 2b is formed in a flat plate shape having a substantially rectangular upper surface 20. A groove 22 is formed near the center of the table 2b on the upper surface 20 side so as to divide the upper surface 20 of the table 2b into two rectangular regions 20a and 20b.

The lower end side of the four springs 24 that expand and contract in the vertical direction is attached to the region 20a on one side of the upper surface 20 divided into two by the groove 22. A spring upper plate 26 is provided at the upper end of each spring 24. A holding unit 2c is arranged on the upper surface 20 of the table 2b.

FIG. 4 is a perspective view schematically showing the holding unit 2c. As shown in FIG. 4, the holding unit 2c includes a first holding means 28 arranged in the area surrounded by the four springs 24 in the area 20a and a second holding means 30 arranged in the area 20b. , Equipped with. The first holding means 28 and the second holding means 30 are connected by a band-shaped rubber 38. In a state where the first holding means 28 and the second holding means 30 are arranged on the upper surface 20 of the table 2b, a part of the band-shaped rubber 38 is housed in the groove 22.

A schematic cross-sectional view of the holding unit 2c is shown in FIG. For example, an electrostatic holding portion 32a is provided on the upper portion of the first holding means 28, and an electrostatic holding portion 32b is provided on the upper portion of the second holding means 30. The electrostatic holding portion 32a includes an electrode 44a and an electrode 44b separated from the electrode 44a, and the electrode 44a and the electrode 44b are insulated from each other by being surrounded by an insulator 46a. The electrostatic holding portion 32b includes an electrode 44c and an electrode 44d separated from the electrode 44c, and the electrode 44c and the electrode 44d are insulated from each other by being surrounded by an insulator 46b.

One end of the lead wire 42a (see FIG. 4) is connected to the electrode 44a, and one end of the lead wire 42b (see FIG. 4) is connected to the electrode 44b. A high voltage application unit 40a (see FIG. 4) is connected to the other ends of the lead wire 42a and the lead wire 42b. The high voltage application unit 40a can apply a high voltage to the electrodes 44a and 44b through the conductors 42a and 42b.

One end of the lead wire 42c (see FIG. 4) is connected to the electrode 44c, and one end of the lead wire 42d (see FIG. 4) is connected to the electrode 44d. A high voltage application unit 40b (see FIG. 4) is connected to the other ends of the lead wire 42c and the lead wire 42d. The high voltage application unit 40b can apply a high voltage to the electrodes 44c and 44d through the conductors 42c and 42d.

The high voltage application unit 40a can individually apply a high voltage to the electrodes 44a and 44b. The high voltage application unit 40b can individually apply a high voltage to the electrodes 44c and 44d. The high voltage application unit 40a and the high voltage application unit 40b can apply a high voltage of plus or minus 2 kV, for example.

A first region on one end side of the chip 1 is placed on the first holding means 28, and the first region of the chip 1 is held by the first holding means 28. That is, the first electrostatic holding portion 32a becomes the first support, and the upper surface of the first support becomes the first support surface 28a. The electrodes 44a and 44b each have a predetermined shape, and a high voltage is applied by the high voltage application unit 40a (see FIG. 4) to electrostatically adsorb the chip 1 by Coulomb force or gradient force.

A second region on the other end side of the chip 1 is placed on the second holding means 30, and the second region of the chip 1 is held by the second holding means 30. That is, the second electrostatic holding portion 32b becomes the second support, and the upper surface of the second support becomes the second support surface 30a. The electrodes 44c and 44d each have a predetermined shape, and a high voltage is applied by the high voltage application unit 40b (see FIG. 4) to electrostatically adsorb the chip 1 by Coulomb force or gradient force.

An insulator 34a is provided below the electrostatic holding portion 32a, and an insulator 34b is provided below the electrostatic holding portion 32b. A strip-shaped rubber accommodating body 36a is provided below the insulator 34a, and a strip-shaped rubber accommodating body 36b is provided below the insulator 34b. One end of the band-shaped rubber 38 is housed and fixed in the band-shaped rubber accommodating body 36a, and the other end is housed and fixed in the band-shaped rubber 36b. In FIG. 5, the internal structures of the band-shaped rubber 38 and the band-shaped rubber housings 36a and 36b housed in the band-shaped rubber housings 36a and 36b are omitted.

The first holding means 28 and the second holding means 30 may hold the chip 1 by a method other than electrostatic adsorption by Coulomb force or gradient force. For example, the first support of the first holding means 28 and the second support of the second holding means 30 lead to the first support surface 28a and the second support surface 28b, respectively. The tip 1 may be sucked and held by having a suction path inside. Further, the first holding means 28 and the second holding means 30 may hold the tip 1 with a clamp capable of sandwiching the tip 1 between the first holding means 28 and the respective support surfaces.

The first holding means 28 and the second holding means 30 were held by the region of the chip 1 held by the first holding means 28 and the second holding means 30 while holding the chip 1. It is relatively moved by a face-to-face moving means (not shown) so as to bend the region between the region and the region. That is, the face-to-face moving means relatively moves the first support of the first holding means 28 and the second support of the second holding means 30 so that the supporting surfaces face each other.

For example, the face-to-face moving means is connected to the second support of the second holding means 30, and the second support of the second holding means 30 is curved so as to bend the region between the chips 1. To move. Then, the first support surface of the first holding means 28 and the second support surface of the second holding means 30 face each other.

Further, the first holding means 28 and the second holding means 30 are pressed by the pressing unit 2a shown in FIG. 2 in a state where the supporting surfaces face each other, and are moved so as to be relatively close to each other. ..

The face-to-face moving means and the pressing unit 2a move the first holding means 28 and the second holding means 30 relatively so as to bend the held tip 1 and increase the curvature of the tip 1. Configure means. According to the moving means, the chip 1 can be curved to make the curvature extremely large, so that the chip 1 can be destroyed.

The moving means does not have to be a combination of two different mechanisms, and may be realized by one moving mechanism. In this case, for example, the support of the second holding means 30 is moved by one moving mechanism connected to the second holding means 30, and the support surface of the first holding means 28 and the second holding means are used. The support surfaces of 30 are made to face each other. Further, the moving mechanism brings the support of the first holding means 28 and the support of the second holding means 30 closer to each other.

Next, the chip 1 whose bending strength is evaluated by the device 2 (see FIG. 1) for measuring the curvature according to the present embodiment will be described. The chip 1 is manufactured from, for example, a semiconductor wafer such as silicon or sapphire, or a substrate such as glass or quartz.

On the surface of the semiconductor wafer or the substrate, for example, devices such as ICs and LSIs are formed in each of a plurality of regions partitioned by scheduled division lines set in a grid pattern. Then, when the workpiece is cut along the planned division line and the workpiece is divided, a plurality of chips 1 having a device are formed.

The back surface side of the formed chip 1 is ground to be thinned. Alternatively, the semiconductor wafer or the substrate is thinned in advance, and then the semiconductor wafer or the substrate is divided to form the thinned chip 1.

For example, when trying to evaluate the bending strength of an ultrathin tip 1 having a thickness of 30 μm or less by a three-point bending method, even if the tip is pressed with an indenter, the tip only bends and the tip 1 cannot be destroyed. The bending strength cannot be evaluated. Therefore, the curvature is measured by using the device 2 for measuring the curvature according to the present embodiment, and the bending strength is evaluated.

Next, a method of measuring the curvature of the chip 1 implemented by using the device 2 for measuring the curvature according to the present embodiment will be described. In the method, first, a chip holding step of holding the chip 1 is performed. The chip holding step will be described with reference to FIG. 6 (A). FIG. 6A is a schematic side view showing the chip 1 in the chip holding step, the first holding means 28 of the holding unit 2c, and the second holding means 30 of the holding unit 2c.

In the chip holding step, first, the tip 1 is placed on the first holding means 28 and the second holding means 30 so as to straddle the first holding means 28 and the second holding means 30. Put on. That is, the first region on the one end 3a side of the chip 1 is placed on the first support surface 28a on the upper surface of the first support of the first holding means 28, and the second support of the second holding means 30 is placed. The second region on the other end 3b side of the chip 1 is placed on the second support surface 30a on the upper surface.

Then, the high voltage application unit 40a (see FIG. 4) is operated, a high voltage is applied to the electrodes 44a and 44b, the high voltage application unit 40b (see FIG. 4) is operated, and the high voltage is applied to the electrodes 44c and 44d. Is applied. Then, the first region of the chip 1 is electrostatically held by the first holding means 28, and the second region of the chip 1 is electrostatically held by the second holding means 30.

The portion between the first region electrostatically held by the first holding means 28 of the chip 1 and the second region electrostatically held by the second holding means 30 is the measurement region 9. Become. In the device 2 for measuring the curvature, the measurement region 9 is then bent by the relative movement of the first support of the first holding means 28 and the second support of the second holding means 30. , The curvature of the measurement area 9 when the measurement area 9 is destroyed is measured.

Next, the first moving step will be described. The first moving step is performed after the holding step. In the first moving step, the moving means (not shown) is the first holding means 28 and the second holding means so that the measurement area 9 is bent and the cross-sectional shape of the measurement area 9 is arcuate. 30 and are moved relative to each other. Then, the first support surface 28a of the first holding means 28 and the second support surface 30a of the second holding means 30 are made to face each other.

FIG. 6B is a side view schematically showing the state of movement of the second holding means 30 in the first movement step. FIG. 6B shows the second holding means 30 and the tip 1 before the movement, the second holding means 30 and the tip 1 in the process of moving in the first moving step, and the first moving step. A second holding means 30 and a tip 1 at the time of completion are shown. In the first moving step, for example, as shown in FIG. 6B, the second holding means 30 is moved.

When the second holding means 30b is moved by the moving means so that the cross-sectional shape of the measurement region 9 of the chip 1 becomes an arc shape, the radius of curvature of the arc gradually decreases. That is, the curvature of the measurement region 9 gradually increases. As shown in FIG. 6B, when the first holding means 28 and the second holding means 30 face each other, the first moving step ends.

After performing the first movement step, the second movement step is carried out. FIG. 7 is a side view schematically showing the first holding means 28, the second holding means 30, and the chip 1 in the second moving step. In the second moving step, the first holding means 28a of the first holding means 28 and the second supporting surface 30a of the second holding means 30 face each other. The 28 and the second holding means 30 are relatively moved in a direction approaching each other to increase the curvature of the measurement region 9.

The second moving step will be described in more detail. FIG. 1 schematically shows a device 2 for measuring the curvature in the second moving step. In FIG. 1, some springs 24 are omitted. The second moving step is performed in a state where the holding unit 2c holding the chip 1 is sandwiched between the table 2b mounted on the elevator 10 of the pressing unit 2a and the top plate 4. That is, in the second moving step, the pressing unit 2a functions as a moving means.

In the second moving step, the spring upper plate 26 of the spring 24 mounted on the table 2b is brought into contact with the second holding means 30, and the spring 24 is made to support the second holding means 30, so that the first holding means 30 is supported. The state in which the holding means 28 and the second holding means 30 face each other is maintained. In the second moving step, the height adjusting screw 14 of the elevator 10 is rotated to operate the expansion / contraction mechanism 10b to raise the stage 12, and the first holding means 28, the second holding means 30, and the second holding means 30 Reduce the distance of.

Next, a chip destruction detection step for detecting the occurrence of chip destruction during the execution of the first movement step or the second movement step will be described. As the curvature of the measurement region 9 of the chip 1 gradually increases through the first movement step and the second movement step, the stress applied to the chip 1 also gradually increases, and the measurement region 9 of the chip 1 eventually breaks down. Will be done.

The chip destruction detecting means for detecting the occurrence of the destruction of the chip 1 is, for example, an AE (acoustic emission) sensor. When the chip 1 is destroyed, the strain energy stored inside the chip 1 is released as an elastic wave. Therefore, by providing an AE sensor on the surface of the chip 1 and detecting the elastic wave, the chip 1 is destroyed. Can be detected. The occurrence of destruction of the chip 1 may be detected visually by the operator or by detection by a captured image.

Next, the curvature detection step performed after the chip fracture detection step will be described. In the curvature detection step, when the fracture of the chip 1 is detected by the chip fracture detection step, the curvature of the chip 1 used for evaluating the bending strength of the chip 1 is obtained.

The curvature detecting means used in the curvature detecting step is, for example, an imaging camera. The chip 1 is imaged from the imaging camera capable of imaging from the side of the chip 1 in which an arc is formed in the measurement region 9 and the chip 1 is destroyed, and the curvature of the measurement region 9 of the chip 1 is obtained from the obtained image.

Further, as the curvature detecting means, a non-contact length measuring device may be used. For example, the measurement region 9 of the chip 1 may be profile-measured using a laser length measuring device, and the curvature may be detected from the three-dimensional shape of the obtained measurement region 9. For the laser length measuring device, for example, an image processing system "XG-8000 series" manufactured by KEYENCE CORPORATION is used.

Further, when the measurement region 9 of the chip 1 is destroyed in the first moving step, the curvature detecting means may be an angle meter provided in a portion electrostatically attracted to the second holding means 30 of the chip 1. In that case, the curvature of the measurement region 9 of the chip 1 is calculated from the angle indicated by the angle meter.

When the measurement region 9 of the chip 1 is destroyed in the second moving step, the digital gauge 16 provided in the device 2 can be used as the curvature detecting means. The detection of the curvature by the digital gauge 16 will be described with reference to FIG. According to the digital gauge 16 provided in the pressing unit 2a, the height of the stage 12 is measured.

First, the height of the stage 12 at the start of the second movement step is set as an initial value. Further, the value of the distance between the first holding means 28 and the second holding means 30 at the start of the second moving step is measured in advance. Then, when it is detected that the measurement region 9 of the chip 1 has been destroyed, the height of the stage 12 is measured using the digital gauge 16, and the height of the stage 12 in the second moving step is measured from the measured value. Get the amount of rise.

The amount of increase is the same as the amount of decrease in the distance between the first holding means 28 and the second holding means 30 from the start of the second moving step. Then, from the distance between the first holding means 28 at the start of the second moving step and the second holding means 30, the first holding means 28 and the first holding means 28 when the chip 1 is destroyed The distance between the holding means 30 and the holding means 30 of 2 is obtained.

In the second moving step, when the distance is gradually reduced, the portion of the measurement region 9 of the chip 1 that is close to the first holding means 28 or the second holding means 30 is one after another. Comes in contact with the holding means 28 or the second holding means 30. Therefore, the measurement region 9 sandwiched between the first holding means 28 and the second holding means 30 has a semicircular shape having the distance as the diameter.

That is, the radius of curvature of the measurement region 9 is the radius of the semicircle, which is a value obtained by bisecting the distance. That is, the curvature of the measurement region 9 when the chip 1 is broken is obtained from the value indicated by the digital gauge 16.

When the curvature detection step is performed as described above, the curvature of the measurement region 9 when the chip 1 is destroyed is detected. The higher the bending strength of the chip 1, the greater the curvature at which the chip 1 is broken. Therefore, the bending strength of the chip 1 can be evaluated by detecting the curvature of the measurement region 9 when the chip 1 is broken. Further, the curvature at the time of occurrence of fracture is obtained for a plurality of different chips, and the respective curvatures are compared to determine the superiority or inferiority of the bending strength.

According to the method for measuring the curvature of the chip and the device for measuring the curvature according to the present embodiment, the curvature of the chip can be made to a size that was difficult with the conventional three-point bending method, so the three-point bending method is carried out. It is possible to evaluate the bending strength of the chip by causing the chip that is not destroyed to be destroyed.

In particular, when the first holding means 28 and the second holding means 30 face each other and are relatively moved so as to be close to each other, the curvature of the measurement region 9 of the chip 1 can be made extremely large. Finally, when the portion of the chip 1 held by the first holding means 28 and the portion held by the second holding means 30 are brought into contact with each other, the chip 1 can be bent, as compared with the conventional case. Anti-folding strength can be evaluated in a wide range.

The present invention is not limited to the description of the above embodiment, and can be implemented with various modifications. For example, in the method for measuring the curvature of a chip and the device for measuring the curvature according to one aspect of the present invention, further, the curvature of the chip at the time of fracture, the material of the chip, and the thickness of the chip are used for bending. The strength may be calculated.

Furthermore, by preparing a plurality of different sample chips having known bending strength and measuring the curvature at the time of fracture, the relationship between the bending strength and the curvature is obtained in advance, and the relationship is used. The bending strength may be obtained from the curvature at the time of fracture of a chip whose bending strength is unknown.

In addition, the structure, method, etc. according to the above-described embodiment can be appropriately modified and implemented as long as the scope of the object of the present invention is not deviated.

2 Device 2a Pressing unit 2b Table 2c Holding unit 4 Top plate 6 Pedestal 8 Strut 10 Elevator 10a Fixed plate 10b Telescopic mechanism 12 Stage 14 Height adjustment screw 16 Digital gauge 16a Main body 16b Axis 16c Signal line 18 Display 20 Top surface 20a, 20b Area 22 Groove 24 Spring 26 Spring top plate 28, 30 Holding means 28a, 30a Support surface 32a, 32b Electrostatic holding part 34a, 32b Insulator 36a, 36b Band-shaped rubber housing 38 Band-shaped rubber 40a, 40b High voltage application unit 42a, 42b, 42c, 42d Conductive wire 44a, 44b, 44c, 44d Electrode 46a, 46b Insulator 1 Chip 3a, 3b End 9 Measurement area

Claims (2)

A method of measuring the curvature of a chip when the chip is broken in a chip bending test.
The first region on one end side of the chip in the state before being bent is held on the support surface of the first holding means including the first support whose upper surface is the support surface, and the other end side of the chip is held. A chip holding step of holding the region 2 on the support surface of the second holding means including the second support having the upper surface as the support surface.
After performing the holding step, the first region is bent so that the cross-sectional shape of the measurement region becomes arcuate while bending the measurement region between the first region and the second region of the chip. By relatively moving the first support of the holding means and the second support of the second holding means, the supporting surface of the first holding means and the supporting surface of the second holding means are moved. And the first movement step to face each other,
After performing the first moving step, the support surface of the first holding means and the support surface of the second holding means face each other, and the first support of the first holding means is faced with each other. And a second moving step of relatively moving the second support of the second holding means in a direction approaching each other.
A chip destruction detection step for detecting that a chip has been destroyed during the first movement step or the second movement step, and a chip destruction detection step.
A curvature detection step that detects the curvature of the measurement region when chip fracture is detected in the chip fracture detection step, and a curvature detection step.
A method of measuring the curvature of a chip, which comprises. A device that measures the curvature of a chip when it breaks in a chip bending test.
The first holding means for holding the first region on one end side of the chip in the state before bending on the first support surface on the upper surface of the first support, and the second region on the other end side of the chip are second. A second holding means for holding on the second support surface on the upper surface of the support 2 and
A cross section of the measurement region while bending the measurement region between the first holding means, the second holding means, the first region of the chip held by the first holding means, and the second region. The first support of the first holding means and the second support of the second holding means are relatively moved so as to have an arc shape, and the first support surface and the support surface thereof. The second support surface is made to face each other, and then the first support of the first holding means and the second support of the second holding means are relatively moved in a direction approaching each other. The means of transportation to make
Chip destruction detecting means for detecting that the chip is destroyed during the relative movement of the first support of the first holding means by the moving means and the second support of the second holding means. When,
Curvature detecting means for detecting the curvature of the measurement region when chip breaking is detected by the chip breaking detecting means, and
A device for measuring the curvature of a chip, which is characterized by being equipped with.