JP6817167B2 - 耐湿性チップスケールパッケージ発光素子 - Google Patents
耐湿性チップスケールパッケージ発光素子 Download PDFInfo
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- JP6817167B2 JP6817167B2 JP2017151954A JP2017151954A JP6817167B2 JP 6817167 B2 JP6817167 B2 JP 6817167B2 JP 2017151954 A JP2017151954 A JP 2017151954A JP 2017151954 A JP2017151954 A JP 2017151954A JP 6817167 B2 JP6817167 B2 JP 6817167B2
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- layer
- photoluminescent
- light emitting
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- 239000000463 material Substances 0.000 claims description 212
- 230000004888 barrier function Effects 0.000 claims description 79
- 239000004065 semiconductor Substances 0.000 claims description 74
- 229920000642 polymer Polymers 0.000 claims description 62
- 239000011159 matrix material Substances 0.000 claims description 61
- 238000005424 photoluminescence Methods 0.000 claims description 46
- 239000002245 particle Substances 0.000 claims description 24
- 239000002861 polymer material Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 16
- 238000000149 argon plasma sintering Methods 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000004020 luminiscence type Methods 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 237
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 83
- 239000001301 oxygen Substances 0.000 description 83
- 229910052760 oxygen Inorganic materials 0.000 description 83
- 229920001296 polysiloxane Polymers 0.000 description 23
- 238000000034 method Methods 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 16
- 230000035515 penetration Effects 0.000 description 13
- 238000005538 encapsulation Methods 0.000 description 10
- 238000001228 spectrum Methods 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 239000002096 quantum dot Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 8
- 238000000465 moulding Methods 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 238000013459 approach Methods 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
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- 239000011572 manganese Substances 0.000 description 5
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- 229910010272 inorganic material Inorganic materials 0.000 description 4
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- 229910052748 manganese Inorganic materials 0.000 description 4
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- 239000004447 silicone coating Substances 0.000 description 4
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 3
- 239000002250 absorbent Substances 0.000 description 3
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 3
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- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000004054 semiconductor nanocrystal Substances 0.000 description 3
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- 125000006850 spacer group Chemical group 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XPIIDKFHGDPTIY-UHFFFAOYSA-N F.F.F.P Chemical compound F.F.F.P XPIIDKFHGDPTIY-UHFFFAOYSA-N 0.000 description 2
- 239000004954 Polyphthalamide Substances 0.000 description 2
- 229910021536 Zeolite Inorganic materials 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
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- 239000002131 composite material Substances 0.000 description 2
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- 230000007423 decrease Effects 0.000 description 2
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- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 229920006336 epoxy molding compound Polymers 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
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- 229920006375 polyphtalamide Polymers 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002516 radical scavenger Substances 0.000 description 2
- 229910052701 rubidium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000010457 zeolite Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017115 AlSb Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 241000764773 Inna Species 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229940123973 Oxygen scavenger Drugs 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910005642 SnTe Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- -1 manganese-activated fluoride Chemical class 0.000 description 1
- 238000005297 material degradation process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910001428 transition metal ion Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Optical Filters (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105124965A TWI599078B (zh) | 2016-08-05 | 2016-08-05 | 具濕氣阻隔結構之晶片級封裝發光裝置 |
| TW105124965 | 2016-08-05 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020174343A Division JP7100383B2 (ja) | 2016-08-05 | 2020-10-16 | 耐湿性チップスケールパッケージ発光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018056552A JP2018056552A (ja) | 2018-04-05 |
| JP2018056552A5 JP2018056552A5 (ko) | 2019-03-28 |
| JP6817167B2 true JP6817167B2 (ja) | 2021-01-20 |
Family
ID=60719661
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017151954A Active JP6817167B2 (ja) | 2016-08-05 | 2017-08-04 | 耐湿性チップスケールパッケージ発光素子 |
| JP2020174343A Active JP7100383B2 (ja) | 2016-08-05 | 2020-10-16 | 耐湿性チップスケールパッケージ発光素子 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020174343A Active JP7100383B2 (ja) | 2016-08-05 | 2020-10-16 | 耐湿性チップスケールパッケージ発光素子 |
Country Status (3)
| Country | Link |
|---|---|
| JP (2) | JP6817167B2 (ko) |
| KR (1) | KR101942042B1 (ko) |
| TW (1) | TWI599078B (ko) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11335842B2 (en) | 2018-02-14 | 2022-05-17 | Maven Optronics Co., Ltd. | Chip-scale packaging light-emitting device with electrode polarity identifier and method of manufacturing the same |
| TWI659550B (zh) * | 2018-02-14 | 2019-05-11 | 行家光電股份有限公司 | 具電極辨識之晶片級封裝發光裝置及其製造方法 |
| KR102555238B1 (ko) * | 2018-09-13 | 2023-07-14 | 주식회사 루멘스 | 퀀텀닷 엘이디 패키지 및 이를 포함하는 퀀텀닷 엘이디 모듈 |
| JP7054005B2 (ja) | 2018-09-28 | 2022-04-13 | 日亜化学工業株式会社 | 発光装置 |
| JP6940776B2 (ja) | 2018-11-05 | 2021-09-29 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
| CN113826225A (zh) | 2019-03-18 | 2021-12-21 | 英特曼帝克司公司 | 包括光致发光层状结构的封装白色发光装置 |
| KR102140993B1 (ko) * | 2019-04-01 | 2020-08-05 | (주)라이타이저 | 발광다이오드 칩 스케일 패키지 및 그의 제조 방법 |
| KR20210143951A (ko) * | 2019-04-25 | 2021-11-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 낮은 굴절률 및 낮은 수증기 투과율을 갖는 수분 배리어 막 |
| JP6864875B2 (ja) * | 2019-08-30 | 2021-04-28 | 日亜化学工業株式会社 | 発光モジュール及びその製造方法 |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE602004017049D1 (de) * | 2003-12-02 | 2008-11-20 | Koninkl Philips Electronics Nv | Elektrolumineszenzbauelement |
| US7560820B2 (en) * | 2004-04-15 | 2009-07-14 | Saes Getters S.P.A. | Integrated getter for vacuum or inert gas packaged LEDs |
| JP2007317787A (ja) * | 2006-05-24 | 2007-12-06 | Citizen Electronics Co Ltd | 発光装置およびその製造方法 |
| US8947619B2 (en) * | 2006-07-06 | 2015-02-03 | Intematix Corporation | Photoluminescence color display comprising quantum dots material and a wavelength selective filter that allows passage of excitation radiation and prevents passage of light generated by photoluminescence materials |
| JP2008066462A (ja) | 2006-09-06 | 2008-03-21 | Fujikura Ltd | イルミネーションランプ及びイルミネーションランプユニット |
| JP4892380B2 (ja) * | 2007-03-26 | 2012-03-07 | 出光興産株式会社 | 光半導体用反射材 |
| US7791093B2 (en) * | 2007-09-04 | 2010-09-07 | Koninklijke Philips Electronics N.V. | LED with particles in encapsulant for increased light extraction and non-yellow off-state color |
| JP2009071005A (ja) | 2007-09-13 | 2009-04-02 | Sony Corp | 波長変換部材及びその製造方法、並びに、波長変換部材を用いた発光デバイス |
| US9024340B2 (en) * | 2007-11-29 | 2015-05-05 | Nichia Corporation | Light emitting apparatus and method for producing the same |
| WO2010032179A1 (en) * | 2008-09-16 | 2010-03-25 | Koninklijke Philips Electronics N.V. | Polymeric wavelength converting elements |
| US20100119839A1 (en) * | 2008-11-13 | 2010-05-13 | Maven Optronics Corp. | System and Method for Forming a Thin-Film Phosphor Layer for Phosphor-Converted Light Emitting Devices |
| JP2010118560A (ja) * | 2008-11-13 | 2010-05-27 | Sumitomo Metal Electronics Devices Inc | 発光素子搭載用パッケージの製造方法 |
| JP5521325B2 (ja) | 2008-12-27 | 2014-06-11 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
| JPWO2010123059A1 (ja) | 2009-04-22 | 2012-10-25 | シーシーエス株式会社 | Ｌｅｄ発光デバイスの製造方法 |
| JP2011042732A (ja) | 2009-08-20 | 2011-03-03 | Kaneka Corp | Ｌｅｄ封止剤 |
| JP2011243963A (ja) | 2010-04-21 | 2011-12-01 | Mitsubishi Chemicals Corp | 半導体発光装置及び半導体発光装置の製造方法 |
| KR20110136676A (ko) | 2010-06-14 | 2011-12-21 | 삼성엘이디 주식회사 | 양자점을 이용한 발광소자 패키지, 조광 장치 및 디스플레이 장치 |
| JP2012036265A (ja) * | 2010-08-05 | 2012-02-23 | Sharp Corp | 照明装置 |
| JPWO2012090961A1 (ja) * | 2010-12-28 | 2014-06-05 | コニカミノルタ株式会社 | 発光装置、発光装置の製造方法、及び、塗布液 |
| CN103443942A (zh) * | 2011-03-31 | 2013-12-11 | 松下电器产业株式会社 | 半导体发光元件以及发光装置 |
| CN103650183B (zh) * | 2011-06-30 | 2017-02-22 | 松下知识产权经营株式会社 | 发光装置 |
| KR101265094B1 (ko) * | 2011-08-09 | 2013-05-16 | 한국과학기술연구원 | 백색 발광 다이오드 및 그 제조 방법 |
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| Publication number | Publication date |
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| JP2018056552A (ja) | 2018-04-05 |
| JP2021044554A (ja) | 2021-03-18 |
| JP7100383B2 (ja) | 2022-07-13 |
| KR101942042B1 (ko) | 2019-01-25 |
| TW201806189A (zh) | 2018-02-16 |
| TWI599078B (zh) | 2017-09-11 |
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