JP6812657B2 - 発光装置の製造方法 - Google Patents
発光装置の製造方法 Download PDFInfo
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- JP6812657B2 JP6812657B2 JP2016078239A JP2016078239A JP6812657B2 JP 6812657 B2 JP6812657 B2 JP 6812657B2 JP 2016078239 A JP2016078239 A JP 2016078239A JP 2016078239 A JP2016078239 A JP 2016078239A JP 6812657 B2 JP6812657 B2 JP 6812657B2
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- Prior art keywords
- light emitting
- phosphor
- emitting device
- emitting element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Description
(発光装置の構成)
図1(a)は、第1の実施の形態に係る発光装置1の上面図である。図1(a)に示されるように、発光装置1の平面形状の長手方向をx方向、短手方向をy方向とする。図1(b)は、発光装置1のx方向に沿った垂直断面図である。
上記実施の形態によれば、発光素子10の配光分布と封止材11中の蛍光体12の沈降度合いの2つの条件により、発光装置1の発光色度の出射角度依存性を広い範囲で制御できる。
10 発光素子
11 封止材
12 蛍光体
Claims (4)
- 発光素子の配光分布を測定する工程と、
前記発光素子を基体上に搭載する工程と、
前記基体上において蛍光体を含む封止材により、前記発光素子を封止する工程と、
前記発光素子の配光分布に応じて、前記封止材中の前記蛍光体を所定の沈降度合いで沈降させる工程と、
前記封止材中の前記蛍光体が所定の沈降度合いで沈降したとき、加熱処理により、前記封止材を硬化させる工程と、
を含み、
前記封止材中に前記蛍光体を沈降させる工程は、前記発光素子から発せられる光の色と、前記蛍光体から発せられる蛍光の色の混色が所定の発光色度の出射角度依存性を満たすように前記所定の沈降度合いを設定する、
発光装置の製造方法。 - 前記封止材中の分散剤の濃度を調節することにより、前記蛍光体の沈降度合いを設定する、
請求項1に記載の発光装置の製造方法。 - 前記加熱処理の処理条件により、前記蛍光体の沈降度合いを制御する、
請求項1又は2に記載の発光装置の製造方法。 - 前記蛍光体が複数種からなる、
請求項1〜3のいずれか1項に記載の発光装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/195,736 US10644192B2 (en) | 2015-07-13 | 2016-06-28 | Method of manufacturing light-emitting device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015140007 | 2015-07-13 | ||
JP2015140007 | 2015-07-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017022360A JP2017022360A (ja) | 2017-01-26 |
JP6812657B2 true JP6812657B2 (ja) | 2021-01-13 |
Family
ID=57889784
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Application Number | Title | Priority Date | Filing Date |
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JP2016078239A Active JP6812657B2 (ja) | 2015-07-13 | 2016-04-08 | 発光装置の製造方法 |
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JP (1) | JP6812657B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101928304B1 (ko) * | 2017-08-23 | 2018-12-13 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이의 제조 방법 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7129638B2 (en) * | 2000-08-09 | 2006-10-31 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Light emitting devices with a phosphor coating having evenly dispersed phosphor particles and constant thickness |
JP4292794B2 (ja) * | 2002-12-04 | 2009-07-08 | 日亜化学工業株式会社 | 発光装置、発光装置の製造方法および発光装置の色度調整方法 |
JP2007227791A (ja) * | 2006-02-24 | 2007-09-06 | Nichia Chem Ind Ltd | 発光装置の製造方法および発光装置 |
US8425271B2 (en) * | 2006-09-01 | 2013-04-23 | Cree, Inc. | Phosphor position in light emitting diodes |
JP5040863B2 (ja) * | 2008-09-03 | 2012-10-03 | 豊田合成株式会社 | 半導体発光装置 |
JP2012039000A (ja) * | 2010-08-10 | 2012-02-23 | Minebea Co Ltd | 光源装置 |
JP5588368B2 (ja) * | 2011-01-24 | 2014-09-10 | スタンレー電気株式会社 | 発光装置およびその製造方法 |
JP5968037B2 (ja) * | 2012-04-23 | 2016-08-10 | 三菱電機株式会社 | 発光装置の製造方法 |
JP2014036083A (ja) * | 2012-08-08 | 2014-02-24 | Toshiba Corp | 半導体発光装置 |
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2016
- 2016-04-08 JP JP2016078239A patent/JP6812657B2/ja active Active
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JP2017022360A (ja) | 2017-01-26 |
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