JP6808252B2 - How to protect crystal wafer electrodes - Google Patents
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- 239000013078 crystal Substances 0.000 title claims description 63
- 229910052751 metal Inorganic materials 0.000 claims description 100
- 239000002184 metal Substances 0.000 claims description 100
- 239000010410 layer Substances 0.000 claims description 85
- 239000010453 quartz Substances 0.000 claims description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 45
- 239000011241 protective layer Substances 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 18
- 239000000853 adhesive Substances 0.000 claims description 16
- 230000001070 adhesive effect Effects 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000000835 fiber Substances 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 239000003973 paint Substances 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 229920013657 polymer matrix composite Polymers 0.000 claims description 2
- 239000011160 polymer matrix composite Substances 0.000 claims description 2
- 238000007639 printing Methods 0.000 claims description 2
- 239000005060 rubber Substances 0.000 claims description 2
- 238000003786 synthesis reaction Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 70
- 239000012670 alkaline solution Substances 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 11
- 230000006378 damage Effects 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000007772 electrode material Substances 0.000 description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- -1 isolate moisture Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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Description
本発明は、電子技術の分野に関し、特に、水晶ウェハ電極の保護方法に関する。 The present invention relates to the field of electronic technology, and more particularly to a method of protecting a crystal wafer electrode.
水晶発振器は、安定した発振信号を生成する装置として、通信、レーダ、精密計算、精密天秤、携帯電話、航空、電子時計、自動車などの分野で広く使用される。水晶発振器は、電極付きの水晶ウェハとリード付きの実装ハウジングとから構成されており、その構造は図１に示す通りである。 A crystal oscillator is widely used in the fields of communication, radar, precision calculation, precision balance, mobile phone, aviation, electronic clock, automobile, etc. as a device for generating a stable oscillation signal. The crystal oscillator is composed of a crystal wafer with electrodes and a mounting housing with leads, and its structure is as shown in FIG.
現在、石英ウェハの電極材料は一般に金、銀またはアルミニウムのような金属材料で作られており、これらの金属電極材料を堆積する前に、一般に１層または数層の金属連接層が堆積される。接合金属層は、マンガン、ニッケル、クロム、チタン、タングステンなどの材料を含む。しかしながら、電極材料では、金に加えて、他の金属電極材料は一般的な大気環境において空気中の物質と化学反応しやすい。これらの化学的に反応した金属が石英ウェハ用の電極として作用すると、石英ウェハの電気的特性が劣化し、その結果最終装置が適切に機能しなくなる。そして、金属電極層において直接的に露出した石英ウェハは、輸送中に衝突して金属電極層が損傷する。同時に、金属電極層の厚さは非常に薄く、通常数百ナノメートルであり、直接的な衝突は金属電極層に引っかき傷を容易に生じさせる。そのため、搬送中の石英ウェハ上の金属電極材料の衝突による損傷を防止し、石英ウェハを保管し、搬送中の化学反応を避ける対策が重要となる。 Currently, the electrode material of quartz wafers is generally made of metal materials such as gold, silver or aluminum, and one or several layers of metal joints are generally deposited before depositing these metal electrode materials. .. The bonded metal layer contains materials such as manganese, nickel, chromium, titanium and tungsten. However, in the electrode material, in addition to gold, other metal electrode materials are likely to chemically react with substances in the air in a general atmospheric environment. When these chemically reacted metals act as electrodes for a quartz wafer, the electrical properties of the quartz wafer deteriorate, resulting in improper functioning of the final device. Then, the quartz wafer directly exposed in the metal electrode layer collides with each other during transportation, and the metal electrode layer is damaged. At the same time, the thickness of the metal electrode layer is very thin, usually several hundred nanometers, and direct collisions can easily cause scratches on the metal electrode layer. Therefore, it is important to prevent damage due to collision of the metal electrode material on the quartz wafer during transportation, store the quartz wafer, and avoid chemical reactions during transportation.
本発明の目的は、搬送中の石英ウェハ上の金属電極材料の衝突による損傷を防止し、石英ウェハを保管し、搬送中の化学反応を避けるという問題を解決する、石英ウェハ電極を保護する方法を提供することである。 An object of the present invention is a method for protecting a quartz wafer electrode, which solves the problem of preventing damage due to collision of a metal electrode material on a quartz wafer during transportation, storing the quartz wafer, and avoiding a chemical reaction during transportation. Is to provide.
本発明に採用される解決手段は以下の通りである。 The solutions adopted in the present invention are as follows.
水晶ウェハ電極の保護方法は、
石英ウェハを洗ってから脱水するステップＳ１と、
水晶ウェハの上下両面に１層以上の結合金属を堆積するステップＳ２と、
ステップＳ２で得られた接合金属層上に１層以上の金属電極層を堆積するステップＳ３と、
水晶ウェハの上下両面に金属電極層を完全に覆う保護層を堆積するステップＳ４と、
水晶ウェハを水晶振動子装置に実装する前に、保護層を物理的または化学的に除去し、水晶ウェハを洗浄して乾燥させ、最後に電極パターン付き水晶ウェハを水晶振動子装置に実装するステップＳ５を含む。
How to protect the crystal wafer electrode
Step S1 to wash and then dehydrate the quartz wafer,
Step S2 of depositing one or more layers of bonded metal on both the upper and lower sides of the crystal wafer,
In step S3, in which one or more metal electrode layers are deposited on the bonded metal layer obtained in step S2,
Step S4, in which a protective layer completely covering the metal electrode layer is deposited on both the upper and lower surfaces of the crystal wafer,
Before mounting the crystal wafer on the crystal unit, the protective layer is physically or chemically removed, the crystal wafer is washed and dried, and finally the crystal wafer with an electrode pattern is mounted on the crystal unit. Including S5.
金属電極層を構成する金属材料は、石英との密着性が悪いため、金属電極層として電気特性の高い金属を用いることを考慮すると、このような高電気金属電極層と石英の間に、金属接合層と呼ばれる中間遷移層を設置する必要がある。金属接合層は石英との接着性が良好であり、金属接合層を設けることにより金属電極層を支持するため、金属電極層の安定性を向上させるだけでなく、金属電極層の脱落を防止し、高い電気的性能を保証する。 Since the metal material constituting the metal electrode layer has poor adhesion to quartz, considering the use of a metal having high electrical characteristics as the metal electrode layer, a metal is formed between such a highly electrometal electrode layer and quartz. It is necessary to install an intermediate transition layer called a junction layer. The metal bonding layer has good adhesiveness to quartz, and the metal electrode layer is supported by providing the metal bonding layer, which not only improves the stability of the metal electrode layer but also prevents the metal electrode layer from falling off. , Guarantee high electrical performance.
金属電極層を保護層で被覆した後、空気中の水分、酸素、窒素、塵埃等を隔離し、金属電極との化学反応を避けることにより、金属電極の電気的特性の破壊を回避することができる。保護された水晶ウェハは、その後保管されるかまたは特定の場所に輸送される。このプロセスでは、水晶ウェハが揺れたり衝突したりする可能性があるが、保護層の設置により金属電極層に傷を付けたり衝突したりすることがなく、金属電極本来の特性を維持し、金属電極層の高品質と水晶ウェハの完全性を確保できる。 After coating the metal electrode layer with a protective layer, it is possible to avoid destruction of the electrical properties of the metal electrode by isolating moisture, oxygen, nitrogen, dust, etc. in the air and avoiding a chemical reaction with the metal electrode. it can. The protected quartz wafer is then stored or shipped to a specific location. In this process, the crystal wafer may shake or collide, but the installation of the protective layer does not damage or collide with the metal electrode layer, maintaining the original characteristics of the metal electrode and metal. The high quality of the electrode layer and the completeness of the crystal wafer can be ensured.
石英ウェハを使用する必要がある場合、異なった材料に従って物理的または化学的に保護層を取り除く。好ましくは、水酸化ナトリウム、水酸化カリウムまたは炭酸ナトリウムを含むアルカリ性溶液により保護層を除去する。保護層を除去した後、石英ウェハを洗浄し乾燥させる。 最後に、電極パターン付き水晶ウエハを水晶振動子装置に実装する。実装前に保護層を除去した後の洗浄および乾燥工程も電極の電気的性能を低下させるが、このプロセスでは電極露出時間が短いため、この部分の電気的性能の低下は無視できる。 If a quartz wafer needs to be used, the protective layer is physically or chemically removed according to different materials. Preferably, the protective layer is removed with an alkaline solution containing sodium hydroxide, potassium hydroxide or sodium carbonate. After removing the protective layer, the quartz wafer is washed and dried. Finally, the crystal wafer with the electrode pattern is mounted on the crystal oscillator device. The cleaning and drying steps after removing the protective layer before mounting also reduce the electrical performance of the electrodes, but due to the short electrode exposure time in this process, the deterioration of the electrical performance of this part can be ignored.
本発明では、石英ウェハ上に保護層を堆積し、後で石英ウェハを使用するときにアルカリ性溶液または他のエッチング溶液で保護層を除去することにより、石英ウェハの在庫および輸送中に金属電極層の品質を保護し、金属電極層の酸化や摩耗などの欠陥の発生を防止するだけではなく、水晶ウェハを後で使用するときアルカリ性溶液で除去することにより、水晶ウェハ上の金属電極の品質を損なわないと同時に水晶発振器の組立作業を円滑に行うことができる。 In the present invention, a protective layer is deposited on a quartz wafer, and the protective layer is removed with an alkaline solution or other etching solution when the quartz wafer is used later, so that the metal electrode layer is formed during the inventory and transportation of the quartz wafer. Not only does it protect the quality of the metal electrode layer and prevent the occurrence of defects such as oxidation and wear of the metal electrode layer, but it also improves the quality of the metal electrode on the crystal wafer by removing it with an alkaline solution when the crystal wafer is used later. At the same time, the assembly work of the crystal oscillator can be smoothly performed without any damage.
本技術手段の採用により、本発明の有利な効果は以下の通りである。 The advantageous effects of the present invention by adopting the present technical means are as follows.
本発明が提供する水晶ウェハ電極の保護方法において、金属電極層を構成する金属材料は、石英との密着性が悪いため、金属電極層として電気特性の高い金属を用いることを考慮すると、このような高電気金属電極層と石英との金属接合層と呼ばれる中間転移層が必要となる。金属接合層は石英との良好な接着性を有し、金属電極層が金属接合層の設置により支持されるのは金属電極層の安定性を改善し、金属電極層の脱落を防止するだけでなく高い電気的性能を保証する。 In the method for protecting the crystal wafer electrode provided by the present invention, the metal material constituting the metal electrode layer has poor adhesion to quartz. Therefore, considering that a metal having high electrical characteristics is used as the metal electrode layer, this is the case. An intermediate transition layer called a metal junction layer between a highly electrometal electrode layer and quartz is required. The metal bonding layer has good adhesion to quartz, and the metal electrode layer is supported by the installation of the metal bonding layer only by improving the stability of the metal electrode layer and preventing the metal electrode layer from falling off. Guarantees high electrical performance.
本発明が提供する水晶ウェハ電極の保護方法には、金属電極層を保護層で被覆した後、空気中の水分、酸素、窒素、塵埃等を隔離し、金属電極との化学反応を避けることにより、金属電極の電気的特性の破壊を回避することができる。その後、保護された水晶ウェハは保管されるかまたは特定の場所に輸送される。このプロセスでは、水晶ウェハが揺れたり衝突したりする可能性があるが、保護層の設置により金属電極層に傷を付けたり衝突したりすることがなく、金属電極本来の特性を維持し、金属電極層の高品質と水晶ウェハの完全性を確保できる。 The method for protecting the crystal wafer electrode provided by the present invention is to cover the metal electrode layer with a protective layer, isolate moisture, oxygen, nitrogen, dust, etc. in the air, and avoid a chemical reaction with the metal electrode. , It is possible to avoid the destruction of the electrical properties of the metal electrode. The protected quartz wafer is then stored or transported to a specific location. In this process, the crystal wafer may shake or collide, but the installation of the protective layer does not damage or collide with the metal electrode layer, maintaining the original characteristics of the metal electrode and metal. The high quality of the electrode layer and the completeness of the crystal wafer can be ensured.
本発明が提供する水晶ウェハ電極の保護方法には、水晶ウェハを後で使用するときアルカリ性溶液で除去することにより、水晶ウェハ上の金属電極の品質を損なわないと同時に水晶発振器の組立作業を円滑に行うことができる。 The method for protecting the crystal wafer electrode provided by the present invention is to remove the crystal wafer with an alkaline solution when it is used later, so that the quality of the metal electrode on the crystal wafer is not impaired and the assembly work of the crystal oscillator is smoothed. Can be done.
本発明の実施例の本技術手段をより明確に説明するために、以下では実施例に使用される図面について簡単に説明するが、以下の図面は本発明の特定の実施例のみを例示しており、したがって範囲を限定するものと見なされるべきではない。当業者にとって、他の関連する図面もこれらの図面に従って何ら創造的な作業なしに得ることができる。本明細書の図面における各構成要素の比例関係は、実際の材料選択設計における比例関係を表すものではなく、単なる構造または位置の模式図である。 In order to more clearly explain the technical means of the examples of the present invention, the drawings used in the examples will be briefly described below, but the following drawings exemplify only specific examples of the present invention. And therefore should not be considered limiting in scope. For those skilled in the art, other related drawings can also be obtained according to these drawings without any creative work. The proportional relationship of each component in the drawings of the present specification does not represent the proportional relationship in the actual material selection design, but is merely a schematic diagram of the structure or position.
本発明を、添付の図面および実施例を参照して以下にさらに詳細に説明する。本明細書に記載された特定の実施例は、単に本発明を例示するものであり、本発明を限定することを意図するものではなく、すなわち、記載された実施例は、本発明の実施例の一部にすぎず、それら全てではないと理解されるべきである。本明細書の図面に一般的に記載され図示される本発明の実施例の構成要素は、様々な異なる構成で配置および設計されてもよい。 The present invention will be described in more detail below with reference to the accompanying drawings and examples. The specific examples described herein are merely exemplary of the invention and are not intended to limit the invention, i.e., the examples described are examples of the invention. It should be understood that they are only part of, not all of them. The components of the embodiments of the present invention generally described and illustrated in the drawings herein may be arranged and designed in a variety of different configurations.
したがって、本発明の実施例の以下の詳細な説明は、本発明を意図するものではなく、単に本発明の選択された実施例を表す。創造的な努力なしに本発明の実施例に基づいて当業者の得られる他のすべての実施例は、本発明の範囲内である。 Therefore, the following detailed description of the examples of the present invention is not intended by the present invention and merely represents a selected embodiment of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without creative effort are within the scope of the invention.
本明細書に開示されているすべての特徴、または開示されているすべての方法もしくはプロセスにおけるステップは、相互に排他的な特徴および／またはステップ以外の任意の方法で組み合わせることができる。 All features disclosed herein, or steps in all disclosed methods or processes, can be combined in any way other than mutually exclusive features and / or steps.
以下、図１〜図４を参照して本発明を詳細に説明する。 Hereinafter, the present invention will be described in detail with reference to FIGS. 1 to 4.
水晶ウェハ電極の保護方法は、
石英ウェハを洗ってから脱水するステップＳ１と、
水晶ウェハの上下両面に１層以上の結合金属を堆積するステップＳ２と、
ステップＳ２で得られた接合金属層上に１層以上の金属電極層を堆積するステップＳ３と、
水晶ウェハの上下両面に金属電極層を完全に覆う保護層を堆積するステップＳ４と、
水晶ウェハを水晶振動子装置に実装する前に、保護層を物理的または化学的に除去し、水晶ウェハを洗浄して乾燥させ、最後に電極パターン付き水晶ウェハを水晶振動子装置に実装するステップＳ５を含む。
How to protect the crystal wafer electrode
Step S1 to wash and then dehydrate the quartz wafer,
Step S2 of depositing one or more layers of bonded metal on both the upper and lower surfaces of the quartz wafer,
In step S3, in which one or more metal electrode layers are deposited on the bonded metal layer obtained in step S2,
Step S4, in which a protective layer completely covering the metal electrode layer is deposited on both the upper and lower surfaces of the crystal wafer,
Before mounting the crystal wafer on the crystal unit, the protective layer is physically or chemically removed, the crystal wafer is washed and dried, and finally the crystal wafer with an electrode pattern is mounted on the crystal unit. Includes S5.
金属電極層を構成する金属材料は、石英との密着性が悪いため、金属電極層として電気特性の高い金属を用いることを考慮すると、このような高電気金属電極層と石英の間に、図２に示されるように金属接合層と呼ばれる中間遷移層の設置が必要となる。金属接合層は石英との接着性が良好であり、金属接合層を設けることにより金属電極層を支持するため、金属電極層の安定性を向上させるだけでなく、金属電極層の脱落を防止し、高い電気的性能を保証する。 Since the metal material constituting the metal electrode layer has poor adhesion to quartz, considering the use of a metal having high electrical characteristics as the metal electrode layer, the figure between such a high electric metal electrode layer and quartz is shown in the figure. As shown in 2, it is necessary to install an intermediate transition layer called a metal bonding layer. The metal bonding layer has good adhesiveness to quartz, and the metal electrode layer is supported by providing the metal bonding layer, which not only improves the stability of the metal electrode layer but also prevents the metal electrode layer from falling off. , Guarantee high electrical performance.
金属電極層を保護層で被覆した後、空気中の水分、酸素、窒素、塵埃等を隔離し、金属電極との化学反応を避けることにより、金属電極の電気的特性の破壊を回避することができる。その後、保護された水晶ウェハは保管されるかまたは特定の場所に輸送される。このプロセスでは、水晶ウェハが揺れたり衝突したりする可能性があるが、保護層の設置により金属電極層に傷を付けたり衝突したりすることがなく、金属電極本来の特性を維持し、金属電極層の高品質と水晶ウェハの完全性を確保できる。 After coating the metal electrode layer with a protective layer, it is possible to avoid destruction of the electrical properties of the metal electrode by isolating moisture, oxygen, nitrogen, dust, etc. in the air and avoiding a chemical reaction with the metal electrode. it can. The protected quartz wafer is then stored or transported to a specific location. In this process, the crystal wafer may shake or collide, but the installation of the protective layer does not damage or collide with the metal electrode layer, maintaining the original characteristics of the metal electrode and metal. The high quality of the electrode layer and the completeness of the crystal wafer can be ensured.
石英ウェハを使用する必要がある場合、異なった材料に従って物理的または化学的に保護層を取り除く。保護層を除去した後、石英ウェハを洗浄し乾燥させる。 最後に、電極パターン付き水晶ウェハを水晶振動子装置に実装する。実装前に保護層を除去した後の洗浄および乾燥工程も電極の電気的性能を低下させるが、このプロセスでは電極露出時間が短いため、この部分の電気的性能の低下は無視できる。 If a quartz wafer needs to be used, the protective layer is physically or chemically removed according to different materials. After removing the protective layer, the quartz wafer is washed and dried. Finally, the crystal wafer with the electrode pattern is mounted on the crystal oscillator device. The cleaning and drying steps after removing the protective layer before mounting also reduce the electrical performance of the electrodes, but due to the short electrode exposure time in this process, the deterioration of the electrical performance of this part can be ignored.
保護層の除去はアルカリ性溶液で除去することが好ましく、化学的に除去する場合、常温で保護層の選択は保護層とアルカリ性溶液との反応速度が大きい必要があり、且つ、アルカリ性溶液と金属連接層、電極層とウェハの反応速度は非常に遅く、アルカリ性溶液と保護層の反応速度よりもはるかに遅い。上記の要件に基づいて、アルカリ性溶液は水酸化ナトリウム、水酸化カリウムまたは炭酸ナトリウムを採用することができる。保護層材料は、特定の官能基を有する材料である。 The protective layer is preferably removed with an alkaline solution, and when chemically removed, the selection of the protective layer at room temperature requires a high reaction rate between the protective layer and the alkaline solution, and the alkaline solution and the metal are connected. The kinetics of layers, electrode layers and wafers are very slow, much slower than the kinetics of alkaline solutions and protective layers. Based on the above requirements, the alkaline solution can employ sodium hydroxide, potassium hydroxide or sodium carbonate. The protective layer material is a material having a specific functional group.
保護層が物理的に除去されるとき、保護層の選択は、保護層、金属接合層、電極層、およびウェハ間の化学的性質に限定されない。 When the protective layer is physically removed, the choice of protective layer is not limited to the chemical properties between the protective layer, the metal bonding layer, the electrode layer, and the wafer.
本発明では、石英ウェハ上に保護層を堆積し、後で石英ウェハを使用するときにアルカリ性溶液または他のエッチング溶液で保護層を除去することにより、石英ウェハの在庫および輸送中に金属電極層の品質を保護し、金属電極層の酸化や摩耗などの欠陥の発生を防止するだけではなく、水晶ウェハを後で使用するときアルカリ性溶液で除去することにより、水晶ウェハ上の金属電極の品質を損なわないと同時に水晶発振器の組立作業を円滑に行うことができる。 In the present invention, a protective layer is deposited on a quartz wafer, and the protective layer is removed with an alkaline solution or other etching solution when the quartz wafer is used later, so that the metal electrode layer is formed during the inventory and transportation of the quartz wafer. Not only does it protect the quality of the metal electrode layer and prevent the occurrence of defects such as oxidation and wear of the metal electrode layer, but it also improves the quality of the metal electrode on the crystal wafer by removing it with an alkaline solution when the crystal wafer is used later. At the same time, the assembly work of the crystal oscillator can be smoothly performed without any damage.
この実施例は、保護層の材料に対し具体的に説明する。 This embodiment will be specifically described for the material of the protective layer.
本発明において、保護層の材料はポリマー材料である。 In the present invention, the material of the protective layer is a polymer material.
好ましくは、保護層の材料は、プラスチック、ゴム、繊維、塗料、接着剤、ポリマーマトリックス複合材料のうちの１つ以上であり、且つ、保護層の材料は、上記材料を含むが、これらに限定されない。 Preferably, the protective layer material is one or more of plastic, rubber, fiber, paint, adhesive, polymer matrix composite material, and the protective layer material includes, but is limited to, the above materials. Not done.
好ましくは、保護層はフィルム、特に感光性接着剤である。 Preferably, the protective layer is a film, especially a photosensitive adhesive.
さらに、Ｓ４は、フォトリソグラフィ、印刷、コーティング、化学合成、物理的結合のうちの１つにより、金属電極の表面上に保護層を堆積させる。 In addition, S4 deposits a protective layer on the surface of the metal electrode by one of photolithography, printing, coating, chemical synthesis, or physical bonding.
感光性接着剤を用いる場合には、ステップＳ４の後、ステップＳ５を設置し、感光性接着剤を露光処理し、紫外線照射により保護層の硬化を加速させることで、後の石英ウェハの在庫あるいは搬送作業を容易にする。 When a photosensitive adhesive is used, step S5 is set after step S4, the photosensitive adhesive is exposed to light, and the curing of the protective layer is accelerated by irradiation with ultraviolet rays, so that the subsequent quartz wafer is in stock or Facilitates transport work.
感光性接着剤に光を照射し、対応する化学反応原理を図３に示す。 The photosensitive adhesive is irradiated with light, and the corresponding chemical reaction principle is shown in FIG.
感光性接着剤が除去されるとき、対応する化学反応原理が図４および図５に示される。感光性接着剤は、最初に水と反応し、その生成物はアルカリと反応してアルカリ性溶液に溶解して石英ウェハ上に付着する感光性接着剤を除去する。 When the photosensitive adhesive is removed, the corresponding chemical reaction principles are shown in FIGS. 4 and 5. The photosensitive adhesive first reacts with water, the product of which reacts with the alkali and dissolves in an alkaline solution to remove the photosensitive adhesive adhering to the quartz wafer.
この実施例は、金属接合層の材料に対し具体的に説明する。 This embodiment will be specifically described for the material of the metal bonding layer.
本発明では、金属接合層の材料は、マンガン、ニッケル、クロム、チタン、タングステンのうちの１つ以上の材料である。 金属接合層の材料は、上記の材料を含むが、これらに限定されない。 In the present invention, the material of the metal bonding layer is one or more of manganese, nickel, chromium, titanium, and tungsten. The material of the metal bonding layer includes, but is not limited to, the above materials.
この実施例は、金属電極の材料に対し具体的に説明する。 This embodiment will be specifically described with respect to the material of the metal electrode.
本発明では、金属電極層の材料は、金、銀、アルミニウムのうちの１つ以上の材料である。 金属電極層の材料は、上記の材料を含むが、これらに限定されない。 In the present invention, the material of the metal electrode layer is one or more of gold, silver, and aluminum. The material of the metal electrode layer includes, but is not limited to, the above materials.
本実施形態では、金属電極層の材料に対し具体的に説明する。 In this embodiment, the material of the metal electrode layer will be specifically described.
本発明では、水晶ウェハの上下両面にｎ層の金属接合層を堆積し、ｎ≧１とする。 In the present invention, n layers of metal bonding layers are deposited on both the upper and lower surfaces of the quartz wafer so that n ≧ 1.
さらに、水晶ウェハの上下両面にｘ層の金属電極層を堆積し、ｘ≧１とする。 Further, x layers of metal electrode layers are deposited on both the upper and lower surfaces of the crystal wafer so that x ≧ 1.
この実施例は、本発明の全体的な技術的手段に対し具体的に説明する。 This embodiment will specifically illustrate the overall technical means of the invention.
本発明には、２４ＭＨｚのＡＴカット３２２５水晶ウェハのために使用される保護ステップは以下の通りである。 In the present invention, the protection steps used for a 24 MHz AT cut 3225 crystal wafer are:
２４ＭＨｚのＡＴカット３２２５水晶ウェハを洗浄し、その後脱水して乾燥させるステップＳ１、
石英ウェハの上面と下面の両方に、厚さ１００ｎｍの特定のパターンを有するクロム膜が堆積され、この特定のパターンはウェハ上に堆積される電極パターンと一致するステップＳ２、
５００ｎｍの厚さの所望の電極パターンの銀電極がクロム膜上に堆積され、同じ厚さの銀膜が石英ウェハの両面に堆積されるステップＳ３、
フォトリソグラフィでは、感光性接着剤は金属パターンを完全に覆うように、金属電極の表面に感光性接着剤の層を形成するステップＳ４、
感光性接着剤を使用したウェハを実装工場へ搬送するステップＳ５、
実装工場では、感光性接着剤を取り出した後、直ちに金属電極付き水晶ウェハを実装し、実装後に水晶振動子装置を形成するステップＳ６。
Step S1, where the 24 MHz AT cut 3225 crystal wafer is washed, then dehydrated and dried.
A chromium film having a specific pattern with a thickness of 100 nm is deposited on both the upper surface and the lower surface of the quartz wafer, and this specific pattern matches the electrode pattern deposited on the wafer.
Step S3, where a silver electrode of the desired electrode pattern with a thickness of 500 nm is deposited on the chromium film and silver films of the same thickness are deposited on both sides of the quartz wafer.
In photolithography, step S4, where the photosensitive adhesive forms a layer of photosensitive adhesive on the surface of the metal electrode so that it completely covers the metal pattern.
Step S5 of transporting the wafer using the photosensitive adhesive to the mounting factory,
At the mounting factory, immediately after taking out the photosensitive adhesive, a crystal wafer with a metal electrode is mounted, and after mounting, a crystal oscillator device is formed in step S6.
水晶振動子装置に対しては、封着試験、電気特性試験、経年劣化試験などを行い、認定製品を選択して梱包と発送を行うステップＳ７を含む。 The crystal oscillator device includes step S7 in which a sealing test, an electrical characteristic test, an aged deterioration test, and the like are performed, and a certified product is selected, packed and shipped.
以上は、本発明の好適な実施例について説明したが、本発明の範囲はこれに限定されることはなく、任意の当業者が本発明の技術的範囲内で創造的な努力なしに成しうる変更または交換は、本発明の保護範囲に含まれるべきである。本発明の保護範囲は、請求項に限られる保護範囲により決定されるべきである。 Although the preferred embodiments of the present invention have been described above, the scope of the present invention is not limited thereto, and any person skilled in the art can do so within the technical scope of the present invention without creative effort. Any changes or exchanges that may be made should be included in the scope of protection of the present invention. The scope of protection of the present invention should be determined by the scope of protection limited to the claims.
１ 石英ウェハ
２ 実装ハウジング
３ 絶縁体
４ クリスタルホルダー
５ 配線
６ 金属接合層
７ 金属電極層
1
Claims (7)
前記保護層の材料は、プラスチック、ゴム、繊維、塗料、接着剤、ポリマーマトリックス複合材料のうちの１つ以上であることを特徴とする水晶ウェハ電極の保護方法。 Step S1 to wash and then dehydrate the quartz wafer, step S2 to deposit one or more bonded metals on both the upper and lower surfaces of the quartz wafer, and one or more metal electrode layers on the bonded metal layer obtained in step S2. Step S3 to deposit, step S4 to deposit a protective layer completely covering the metal electrode layer on both the upper and lower sides of the crystal wafer, and physically or chemically the protective layer before mounting the crystal wafer on the quartz oscillator device. It has step S5 of removing, cleaning and drying the crystal wafer, and finally mounting the crystal wafer with the electrode pattern on the crystal transducer device .
A method for protecting a crystal wafer electrode, wherein the material of the protective layer is one or more of plastic, rubber, fiber, paint, adhesive, and polymer matrix composite material .
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