TW202029486A - Cmos phtosensitive unit, protection glass module thereof and manufaturing method of the same - Google Patents

Abstract

The invention provides a CMOS photosensitive unit, a protection glass module thereof and a manufacturing method of the same. The CMOS photosensitive unit includes a bucket-shaped casing, a CMOS photosensitive chip, a protection glass and a light shielding dry film ring. The casing has an opening. The CMOS photosensitive chip is disposed in the casing. The protection glass seals the opening and has a light incident surface on which the light shielding dry film ring is disposed. The light shielding dry film ring defines an optical zone facing the CMOS photosensitive chip. Thereby, the light shielding dry film ring is easy to form and does not easily damage the surface of the protection glass.

Description

Complementary metal oxide semiconductor photosensitive element, protective glass module used in the same, and manufacturing method of the protective glass module

The invention relates to a complementary metal oxide semiconductor photosensitive element capable of accurately forming a light-shielding ring on a protective glass, a protective glass module used in the protective glass module, and a manufacturing method of the protective glass module.

Complementary metal oxide semiconductors (hereinafter referred to as CMOS) are widely used in photosensitive elements, and then applied in mobile phones, car lenses and other fields.

The common problem with this type of CMOS sensor is that when the CMOS sensor enters a bright place from a dark place instantaneously (such as when entering or exiting a tunnel), CMOS is prone to noise. In order to solve this problem, it has been proposed to vapor-deposit ferrous metals such as molybdenum and chromium on the cover glass of CMOS photosensitive elements, and then apply resist, pattern the resist, and etch the aforementioned ferrous metal. The resist stripping process forms a light-shielding ring on the cover glass, thereby reducing the noise generated by the CMOS sensor.

However, the aforementioned manufacturing process has its drawbacks in that, in order to avoid leaving etching residues on the protective glass and to form a neatly-edged light-shielding ring, the protective glass must be immersed in the etching solution for a long time, which causes the surface of the protective glass to be easily damaged. And etching, causing subsequent reflection spots, and will reduce the resolution.

Others have proposed to use a special steel plate to print the light-shielding ring on the protective glass process, but this method is likely to cause the protective glass to be scratched by the steel plate, and in order to maintain the printing accuracy, the steel plate must be replaced every ten to twenty times. .

In view of this, how to solve the aforementioned problems really needs to be considered by those skilled in the art.

The main purpose of the present invention is to provide a complementary metal oxide semiconductor photosensitive element capable of accurately forming a light-shielding ring on a protective glass, a protective glass module used therefor, and a manufacturing method of the protective glass module.

In order to achieve the above and other objectives, the present invention provides a complementary metal oxide semiconductor photosensitive element, which includes a bucket-shaped housing, a complementary metal oxide semiconductor photosensitive chip, a cover glass and a light-shielding dry film ring. The casing has an opening, the complementary metal oxide semiconductor photosensitive chip is disposed in the casing, the cover glass seals the opening of the casing, and the cover glass has a light incident surface, and the light-shielding dry film ring is disposed at The light incident surface of the protective glass and the light-shielding dry film ring define an optical zone, and the optical zone faces the complementary metal oxide semiconductor photosensitive chip.

In order to achieve the above and other objectives, the present invention provides a protective glass module for a complementary metal oxide semiconductor photosensitive element. The complementary metal oxide semiconductor photosensitive element includes a bucket-shaped housing and a complementary metal oxide The semiconductor photosensitive chip is arranged in the housing, the protective glass module includes a protective glass and a light-shielding dry film ring, the protective glass has a light incident surface, and the light-shielding dry film ring is arranged on the light incident surface of the protective glass, and The light-shielding dry film ring defines an optical zone, and the optical zone is used to face the complementary metal oxide semiconductor photosensitive chip.

In order to achieve the above and other objectives, the present invention provides a method for manufacturing a protective glass module for a complementary metal oxide semiconductor photosensitive element. The complementary metal oxide semiconductor photosensitive element includes a bucket-shaped housing and a complementary metal. The oxide semiconductor photosensitive wafer is arranged in the housing, and the manufacturing method includes: A) coating a light-shielding dry film slurry on a carrier film; B) drying the light-shielding dry film slurry on the carrier film into a light-shielding dry film layer; C ) Laminating the light-shielding dry film layer on the carrier film on a light incident surface of a protective glass; and D) Remove part of the light-shielding dry film layer so that the light-shielding dry film layer defines an optical zone, which is used for To face the complementary metal oxide semiconductor photosensitive wafer.

With the above design, the present invention proposes a complementary metal oxide semiconductor photosensitive element with a light-shielding dry film ring. The light-shielding dry film ring is easy to shape and does not easily damage the surface of the protective glass.

Fig. 1 is an explanatory diagram of the structure of one embodiment of the cover glass module of the present invention, wherein Fig. 1(a) is a plan view of the cover glass module 1, and Fig. 1(b) is a schematic longitudinal section thereof. Figure 2 is a schematic longitudinal cross-sectional view of one embodiment of the complementary metal oxide semiconductor photosensitive element of the present invention.

The protective glass module 1 includes a protective glass 10 and a light-shielding dry film ring 20. The protective glass 10 has a light incident surface 11 and a light exit surface 12. The cover glass 10 has a high light transmittance for light waves that are scheduled to pass, and preferably but not limited to being able to absorb or reflect light waves that are not scheduled to pass; for example, the cover glass 10 is, for example, an infrared absorbing glass containing Cu ²⁺ ( For example, fluorophosphate-based glass), which can maintain high light transmittance in the visible light range while absorbing near infrared rays.

The light-shielding dry film ring 20 is formed on the light-incident surface 11 of the cover glass 10, the frame-shaped light-shielding dry film ring 20 defines an optical zone 21 in the center, and a part of the light-incident surface 11 of the cover glass 10 is shielded by the light-shielding dry film ring 20 Therefore, unnecessary light shielding can be removed, so that most of the light can only penetrate the protective glass 10 in the optical zone 21 defined by the light shielding dry film ring 20.

As shown in FIG. 2, the complementary metal oxide semiconductor photosensitive element 100 includes a bucket-shaped housing 30, a complementary metal oxide semiconductor photosensitive chip 40, and the protective glass module 1 as described above. The bucket-shaped housing 30 has an opening 31 through which light can enter the housing 30. The complementary metal oxide semiconductor photosensitive chip 40 is disposed in the housing 30 and has a light receiving surface 41. When light is projected onto the light receiving surface 41, the complementary metal oxide semiconductor photosensitive chip can generate a corresponding photosensitive signal.

In addition, the aforementioned cover glass 10 is sealed with an adhesive to seal the opening 31 of the housing 30, its light exit surface 12 faces the complementary metal oxide semiconductor photosensitive chip 40, and its light incident surface 11 faces away from the complementary metal oxide semiconductor photosensitive chip. 40 direction. The optical zone 21 of the light-shielding dry film ring 20 faces the complementary metal oxide semiconductor photosensitive wafer 40, and its orthographic projection is larger than the light receiving surface 41 of the complementary metal oxide semiconductor photosensitive wafer 40, so that required light can pass through the protective glass 10 It is directed toward the light-receiving surface 41, but it can prevent unnecessary light from being projected to the complementary metal oxide semiconductor photosensitive chip, and reduce the occurrence of ghosting, reflected light spots or noise. It should be noted that the size of the optical zone 21 will be determined according to the optical elements such as lenses arranged outside the complementary metal oxide semiconductor photosensitive element 100, the size of the complementary metal oxide semiconductor photosensitive chip 40 and the size of the cover glass 10. It is not limited to what is shown in this embodiment.

The manufacturing method of the protective glass module of the present invention will be described below.

As shown in Figure 3, a light-shielding dry film slurry 300 is coated on a carrier film 200; the carrier film 200 can be, but is not limited to, polyethylene terephthalate (PET) or other polyester film, polyamide Amine film, polyamide imide film, polypropylene film or polystyrene film preferably has a thickness of 10-150 µm, and its surface can be smooth or matte. The coating is carried out, for example, using a lip coater The light-shielding dry film slurry is, for example, a black epoxy resin compound or a compound based on silicone; the light-shielding dry film slurry, for example, has photocuring or thermal curing properties, or both photocuring and thermal curing properties .

Next, as shown in Figure 4, the aforementioned carrier film 200 is passed through a dryer to dry the light-shielding dry film slurry 300 into a light-shielding dry film layer 300';

Next, as shown in Figure 5, the light-shielding dry film layer 300' on the carrier film 200 is laminated on the light incident surface 11 of the cover glass 10 by a laminator before being completely cured;

Then, please refer to Figures 1 and 2, using laser cutting to remove a part of the light-shielding dry film layer 300', so that the light-shielding dry film layer 300' defines a light-sensitive surface for the complementary metal oxide semiconductor The optical zone 21 of the wafer 40, the orthographic projection of the optical zone 21 is larger than the light-receiving surface 41 of the complementary metal oxide semiconductor photosensitive wafer 40; the laser cutting is performed by a laser cutting machine, which can accurately cut the light-shielding dry film In the layer 300', the cutting edge can be kept flat and the glass surface is not easily damaged. Before laser cutting, the carrier film 200 can be peeled off from the surface of the light-shielding dry film layer 300'. The light-shielding dry film layer 300' can be photocured, thermally cured, or both photocured and thermally cured before or after laser cutting. After the optical zone is formed and cured, the light-shielding dry film layer 300' becomes the light-shielding dry film ring as described above.

1: Protective glass module 10: Protective glass 11: Light incident surface 12: Light exit surface 20: Shading dry film ring 21: Optical Zone 30: shell 31: Opening 40: Complementary metal oxide semiconductor photosensitive wafer 41: Light-receiving surface 100: Complementary metal oxide semiconductor photosensitive element 200: carrier film 300: Shading dry film paste 300’: Shading dry film layer

Figure 1 is an explanatory diagram of the structure of one embodiment of the cover glass module of the present invention.

Figure 2 is a schematic longitudinal cross-sectional view of one embodiment of the complementary metal oxide semiconductor photosensitive element of the present invention.

Figures 3 to 5 are schematic diagrams of manufacturing one embodiment of the protective glass module of the present invention.

1: Protective glass module

10: Protective glass

11: Light incident surface

12: Light exit surface

20: Shading dry film ring

21: Optical Zone

Claims (10)

A complementary metal oxide semiconductor photosensitive element, comprising: a bucket-shaped casing with an opening; a complementary metal oxide semiconductor photosensitive chip arranged in the casing; a protective glass to seal the opening of the casing Section, the protective glass has a light incident surface; and a light-shielding dry film ring, arranged on the light-incident surface of the protective glass, the light-shielding dry film ring defines an optical zone, the optical zone is used to face the complementary metal Oxide semiconductor photosensitive wafer. The complementary metal oxide semiconductor photosensitive element according to claim 1, wherein the orthographic projection of the optical zone is larger than a light-receiving surface of the complementary metal oxide semiconductor photosensitive wafer. A protective glass module used for a complementary metal oxide semiconductor photosensitive element. The complementary metal oxide semiconductor photosensitive element includes a bucket-shaped casing and a complementary metal oxide semiconductor photosensitive chip arranged in the casing. The protective glass module includes: a protective glass with a light incident surface; and a light-shielding dry film ring arranged on the light-incident surface of the protective glass, and the light-shielding dry film ring defines an optical zone for correcting The complementary metal-sensitive compound semiconductor photosensitive wafer for the casing. The cover glass module for a complementary metal oxide semiconductor photosensitive element according to claim 3, wherein the orthographic projection of the optical zone is larger than a light-receiving surface of the complementary metal oxide semiconductor photosensitive chip. A method for manufacturing a protective glass module for a complementary metal oxide semiconductor photosensitive element. The complementary metal oxide semiconductor photosensitive element includes a bucket-shaped casing and a complementary metal oxide semiconductor photosensitive chip arranged in the casing The manufacturing method includes: A) coating a light-shielding dry film slurry on a carrier film; B) drying the light-shielding dry film slurry on the carrier film into a light-shielding dry film layer; C) The light-shielding dry film layer is laminated on a light incident surface of a protective glass; D) A part of the light-shielding dry film layer is removed so that the light-shielding dry film layer defines an optical zone for facing the inside of the housing The complementary metal oxide semiconductor photosensitive wafer. The method for manufacturing a cover glass module for a complementary metal oxide semiconductor photosensitive element as described in claim 5, wherein before step D), the carrier film is further peeled off the light-shielding dry film layer. The manufacturing method of the cover glass module for the complementary metal oxide semiconductor photosensitive element as described in claim 5, wherein in step D), the part of the light-shielding dry film layer is removed by laser cutting. The method for manufacturing a cover glass module for a complementary metal oxide semiconductor photosensitive element according to any one of claims 5 to 7, wherein before step D), the light-shielding dry film layer is cured. The method for manufacturing a cover glass module for a complementary metal oxide semiconductor photosensitive element according to any one of claims 5 to 7, wherein after step D), the light-shielding dry film layer is cured. The method for manufacturing a cover glass module for a complementary metal oxide semiconductor photosensitive element according to any one of claims 5 to 7, wherein the orthographic projection of the optical zone is larger than a light receiving area of the complementary metal oxide semiconductor photosensitive chip surface.

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