CN111524921A - Complementary metal oxide semiconductor photosensitive assembly, protective glass module and manufacturing method - Google Patents
Complementary metal oxide semiconductor photosensitive assembly, protective glass module and manufacturing method Download PDFInfo
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- CN111524921A CN111524921A CN201910108543.8A CN201910108543A CN111524921A CN 111524921 A CN111524921 A CN 111524921A CN 201910108543 A CN201910108543 A CN 201910108543A CN 111524921 A CN111524921 A CN 111524921A
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- light
- dry film
- complementary metal
- metal oxide
- oxide semiconductor
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- 239000011521 glass Substances 0.000 title claims abstract description 32
- 230000001681 protective effect Effects 0.000 title claims abstract description 27
- 230000000295 complement effect Effects 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 25
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 230000003287 optical effect Effects 0.000 claims abstract description 23
- 239000006059 cover glass Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 12
- 238000003698 laser cutting Methods 0.000 claims description 6
- 239000002002 slurry Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 description 5
- 229910000831 Steel Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000016 photochemical curing Methods 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000001029 thermal curing Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000005303 fluorophosphate glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Abstract
The invention provides a complementary metal oxide semiconductor photosensitive assembly, a protective glass module and a manufacturing method thereof, wherein the complementary metal oxide semiconductor photosensitive assembly comprises a bucket-shaped shell, a complementary metal oxide semiconductor light sensing chip, protective glass and a shading dry film ring, the shell is provided with an opening, the complementary metal oxide semiconductor light sensing chip is arranged in the shell, the protective glass seals the opening of the shell, the protective glass is provided with a light incident surface, the shading dry film ring is arranged on the light incident surface of the protective glass, an optical area is defined in the shading dry film ring, and the optical area is opposite to the complementary metal oxide semiconductor light sensing chip. Therefore, the shading dry film ring is easy to form and is not easy to damage the surface of the protective glass.
Description
Technical Field
The invention relates to a complementary metal oxide semiconductor photosensitive assembly capable of accurately forming a shading ring on protective glass, a protective glass module used by the complementary metal oxide semiconductor photosensitive assembly and a manufacturing method of the protective glass module.
Background
Complementary Metal Oxide Semiconductors (CMOS) are widely used in light-sensing devices, and are further used in the fields of mobile phones, vehicle-mounted lenses, and the like.
A common problem with such CMOS sensors is that they are prone to noise when they enter the light from the shadow (e.g., when they enter or exit the tunnel). In order to solve the above problems, it is proposed to evaporate black metals such as molybdenum and chromium on the protective glass of the CMOS photosensitive device, and then form a light shielding ring on the protective glass by coating a resist, patterning the resist, etching the black metals, and finally stripping the resist, thereby reducing the noise generated by the CMOS photosensitive device.
However, the foregoing process has a drawback in that the cover glass must be immersed in the etching solution for a long time in order to avoid the etching residues on the cover glass and to form the light shielding ring with a neat edge, which causes the surface of the cover glass to be easily etched together, resulting in the generation of reflected light spots and the decrease of resolution.
Another proposed process is to print the shading ring on the protective glass by using a special steel plate, but this method is liable to cause the protective glass to be scratched by the steel plate, and the steel plate needs to be replaced every ten to twenty times to maintain the printing accuracy.
In view of the above, how to solve the foregoing problems needs to be thought by those skilled in the art.
Disclosure of Invention
In view of the above, the present invention provides a cmos photosensitive device capable of accurately forming a light shielding ring on a cover glass, a cover glass module used therein, and a method for manufacturing the cover glass module.
In order to achieve the above and other objects, the present invention provides a cmos photosensitive assembly, which includes a funnel-shaped housing, a cmos photosensitive chip, a cover glass, and a light-shielding dry film ring, wherein the housing has an opening, the cmos photosensitive chip is disposed in the housing, the cover glass seals the opening of the housing, the cover glass has a light incident surface, the light-shielding dry film ring is disposed on the light incident surface of the cover glass, and the light-shielding dry film ring defines an optical area therein, and the optical area faces the cmos photosensitive chip.
In order to achieve the above and other objects, the present invention provides a cover glass module for a cmos sensor assembly, the cmos sensor assembly includes a funnel-shaped housing and a cmos light sensing chip disposed in the housing, the cover glass module includes a cover glass and a light-shielding dry film ring, the cover glass has a light incident surface, the light-shielding dry film ring is disposed on the light incident surface of the cover glass, and an optical area is defined in the light-shielding dry film ring and is configured to face the cmos light sensing chip.
In order to achieve the above and other objects, the present invention provides a method for manufacturing a cover glass module for a cmos sensor assembly, the cmos sensor assembly including a funnel-shaped housing and a cmos light sensing chip disposed in the housing, the method comprising: A) coating a light-shielding dry film slurry on a carrier film; B) drying the shading dry film slurry on the carrier film into a shading dry film layer; C) laminating the shading dry film layer on the carrier film on a light incident surface of a protective glass; and D) removing a part of the shading dry film layer to enable the shading dry film layer to define an optical area, wherein the optical area is used for facing the complementary metal oxide semiconductor light sensing chip.
Through the design, the invention provides the complementary metal oxide semiconductor photosensitive assembly with the shading dry film ring, and the shading dry film ring is easy to form and is not easy to damage the surface of the protective glass.
Other effects and embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic view showing the structure of one embodiment of the cover glass module of the present invention;
FIG. 2 is a schematic longitudinal cross-sectional view of one embodiment of a CMOS photosensitive device according to the invention;
fig. 3 to 5 are schematic views illustrating a manufacturing method of a cover glass module according to an embodiment of the present invention.
Description of the symbols
1 cover glass Module 10 cover glass
11 light incident surface 12 light emitting surface
20 light-shielding dry film ring 21 optical zone
30 opening of case 31
40 complementary metal oxide semiconductor light sensing chip
41 light-receiving surface 200 carrier film
100 complementary metal oxide semiconductor photosensitive assembly
300 shading dry film paste 300' shading dry film layer
Detailed Description
The foregoing and other technical matters, features and effects of the present invention will be apparent from the following detailed description of a preferred embodiment, which is to be read in connection with the accompanying drawings. Directional terms as referred to in the following examples, for example: up, down, left, right, front or rear, etc., are simply directions with reference to the drawings. Accordingly, the directional terminology is used for purposes of illustration and is in no way limiting.
FIG. 1 is a diagram illustrating the structure of one embodiment of the cover glass module according to the present invention. FIG. 2 is a schematic longitudinal cross-sectional view of a CMOS photosensitive device according to an embodiment of the invention.
The cover glass module 1 includes a cover glass 10 and a light-shielding dry film ring 20, the cover glass 10 has a light incident surface 11 and a light emergent surface 12. The cover glass 10 has high light transmittance for light waves which are scheduled to pass through, and preferably, but not limited to, can absorb or reflect light waves which are not scheduled to pass through; for example, the cover glass 10 contains Cu, for example2+The infrared absorbing glass (e.g., fluorophosphate glass) of (1) can absorb near infrared rays while maintaining a high transmittance in the visible light range.
The dry film shielding ring 20 is formed on the light incident surface 11 of the protection glass 10, an optical area 21 is defined in the center of the frame-shaped dry film shielding ring 20, and a part of the light incident surface 11 of the protection glass 10 is shielded by the dry film shielding ring 20 to remove unnecessary light, so that most of the light can penetrate through the protection glass 10 only in the optical area 21 defined by the dry film shielding ring 20.
As shown in fig. 2, the cmos photosensitive device 100 includes a hopper-shaped housing 30, a cmos photosensitive chip 40 and the cover glass module 1. The housing 30 has an opening 31, and light can enter the housing 30 through the opening 31. The cmos light sensor chip 40 is disposed in the housing 30 and has a light receiving surface 41, and when light is projected onto the light receiving surface 41, the cmos light sensor chip can generate a corresponding light sensing signal.
The cover glass 10 is sealed with an adhesive in the opening 31 of the case 30, and the light emitting surface 12 faces the cmos light-sensing chip 40 and the light incident surface 11 faces away from the cmos light-sensing chip 40. The optical area 21 of the light-shielding dry film ring 20 is over against the complementary metal oxide semiconductor light-sensing chip 40, and the orthographic projection of the optical area is larger than the light-receiving surface 41 of the complementary metal oxide semiconductor light-sensing chip 40, so that required light can be emitted to the light-receiving surface 41 through the protective glass 10, unnecessary light can be prevented from being projected to the complementary metal oxide semiconductor light-sensing chip, and double images, reflected light spots or noise can be reduced. The size of the optical area 21 is determined by the optical element such as a lens disposed outside the cmos photosensitive element 100, the size of the cmos light-sensing chip 40, and the size of the cover glass 10, and is not limited to those shown in the present embodiment.
The following describes a method for manufacturing a cover glass module according to the present invention.
As shown in fig. 3, a light-shielding dry film paste 300 is coated on a carrier film 200; the carrier film 200 may be, but is not limited to, a polyethylene terephthalate (PET) or other polyester film, a polyimide film, a polyamideimide film, a polypropylene film or a polystyrene film, preferably having a thickness of 10-150 μm, and the surface thereof may be smooth or matte, for example, using a lip coater; the light-shielding dry film paste is, for example, a black epoxy resin compound or a compound based on silica gel; the light-shielding dry film paste has, for example, photocuring or thermocuring properties, or both photocuring and thermocuring properties.
Next, as shown in fig. 4, the carrier film 200 is passed through a dryer to dry the light-shielding dry film paste 300 into a light-shielding dry film layer 300';
next, as shown in fig. 5, the light-shielding dry film layer 300' on the carrier film 200 is laminated on the light incident surface 11 of the cover glass 10 by a laminator before being completely cured;
next, referring to fig. 1 and fig. 2, a portion of the light-shielding dry film layer 300 'is removed by laser cutting, so that the light-shielding dry film layer 300' defines an optical area 21 for facing the cmos light-sensing chip 40, and an orthogonal projection of the optical area 21 is larger than the light-receiving surface 41 of the cmos light-sensing chip 40; the laser cutting is performed by a laser cutting machine, the light-shielding dry film layer 300' can be accurately cut, the cutting edge can be kept flat, and the surface of the glass is not easy to damage. Before laser cutting, the carrier film 200 may be peeled off from the surface of the light-shielding dry film layer 300'. The light blocking dry film layer 300' may be photo-cured, thermally cured, or both before or after laser cutting. After the optical zone is formed and cured, the light-blocking dry film layer 300' becomes a light-blocking dry film ring as described above.
The above-described embodiments and/or implementations are only for illustrating the preferred embodiments and/or implementations of the present technology, and are not intended to limit the implementations of the present technology in any way, and those skilled in the art can make many modifications or changes without departing from the scope of the technology disclosed in the present disclosure, but should be construed as technology or implementations that are substantially the same as the present technology.
Claims (10)
1. A CMOS photosensitive assembly, comprising:
a hopper-shaped shell with an opening part;
the complementary metal oxide semiconductor light sensing chip is arranged in the shell;
a protective glass for sealing the opening of the housing, the protective glass having a light incident surface; and
and the shading dry film ring is arranged on the light incident surface of the protective glass, and an optical area is defined in the shading dry film ring and is used for facing the complementary metal oxide semiconductor light sensing chip.
2. The CMOS sensor assembly of claim 1, wherein the optical area has an orthogonal projection larger than a light receiving surface of the CMOS light sensing chip.
3. The utility model provides a protective glass module for complementary metal oxide semiconductor photosensitive assembly, its characterized in that, this complementary metal oxide semiconductor photosensitive assembly includes the casing of a hopper-shaped and a complementary metal oxide semiconductor light sensing chip locates in this casing, and this protective glass module includes:
a protective glass having a light incident surface; and
and the shading dry film ring is arranged on the light incident surface of the protective glass, defines an optical area in the shading dry film ring and is used for facing the complementary metal chemical substance semiconductor light sensing chip of the shell.
4. The cover glass module according to claim 3, wherein the optical area has an orthogonal projection larger than a light-receiving surface of the CMOS light-sensing chip.
5. A method for manufacturing a protective glass module for a complementary metal oxide semiconductor photosensitive assembly is characterized in that the complementary metal oxide semiconductor photosensitive assembly comprises a bucket-shaped shell and a complementary metal oxide semiconductor photosensitive chip arranged in the shell, and the method comprises the following steps:
A) coating a light-shielding dry film slurry on a carrier film;
B) drying the shading dry film slurry on the carrier film into a shading dry film layer;
C) laminating the shading dry film layer on the carrier film on a light incident surface of a protective glass;
D) removing a part of the light-shielding dry film layer to define an optical region for facing the CMOS light-sensing chip in the housing.
6. The method according to claim 5, wherein the carrier film is further peeled off the light-shielding dry film layer before the step D).
7. The method according to claim 5, wherein in step D), the portion of the light-shielding dry film is removed by laser cutting.
8. The method of manufacturing a cover glass module for a CMOS photosensitive device as in any one of claims 5 to 7, wherein the light shielding dry film layer is cured before step D).
9. The method of manufacturing a cover glass module for a CMOS photosensitive device as in any one of claims 5 to 7, wherein the light shielding dry film layer is cured after step D).
10. The method of any one of claims 5-7, wherein an orthogonal projection of the optical area is larger than a light-receiving surface of the CMOS light-sensing chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910108543.8A CN111524921A (en) | 2019-02-03 | 2019-02-03 | Complementary metal oxide semiconductor photosensitive assembly, protective glass module and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910108543.8A CN111524921A (en) | 2019-02-03 | 2019-02-03 | Complementary metal oxide semiconductor photosensitive assembly, protective glass module and manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111524921A true CN111524921A (en) | 2020-08-11 |
Family
ID=71900863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910108543.8A Pending CN111524921A (en) | 2019-02-03 | 2019-02-03 | Complementary metal oxide semiconductor photosensitive assembly, protective glass module and manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111524921A (en) |
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2019
- 2019-02-03 CN CN201910108543.8A patent/CN111524921A/en active Pending
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